Abstract: Embodiments of the present invention provide apparatus and method for reducing noises in temperature measurement during thermal processing. One embodiment of the present invention provides a chamber for processing a substrate comprising a chamber enclosure defining a processing volume, an energy source configured to direct radiant energy toward the processing volume, a spectral device configured to treat the radiant energy directed from the energy source towards the processing volume, a substrate support disposed in the processing volume and configured to support the substrate during processing, and a sensor assembly configured to measure temperature of the substrate being processed by sensing radiation from the substrate within a selected spectrum.

Abstract: A food warming cabinet keeps food warm and on display in serving trays using infrared heaters instead of hot water. The infrared heaters are located below the trays and direct IR at the trays. In an alternate embodiment, the IR heaters can also conduct heat into the trays. Using IR instead of water saves energy because it shortens warm-up time. Using IR also eliminates contaminated water and enables separate and individual temperature control of each tray. Tray temperature is maintained under computer control using contact or optical/IR temperature sensors.

Abstract: In a heat treatment apparatus, a reflector is provided to cover a plurality of flash lamps arranged in an array for emitting a flash of light, and a cooling box is provided over the reflector. The cooling box has a buffer space incorporated therein, and a plurality of jet openings in communication with the buffer space are formed through a bottom surface of the cooling box and the reflector. The plurality of jet openings are positioned just over gaps between the plurality of flash lamps in the lamp array. Nitrogen gas ejected from the plurality of jet openings passes through the gaps between adjacent ones of the flash lamps in the lamp array, and is then blown against a lamp light radiation window. The flash lamps are effectively cooled down by the direct cooling using the nitrogen gas and the decrease in temperature of the lamp light radiation window.

Abstract: A cooking appliance includes a glass cooktop panel and a cooktop frame. A radiant heating element is positioned between the cooktop frame and the glass cooktop panel. The heating element has an upper surface biased toward a lower surface of the glass cooktop panel. A screwless spring clip is coupled to both the heating element and the cooktop frame so as to secure the heating element to the cooktop frame.

Abstract: In a heat treatment apparatus, a holding part moves upwardly to receive a semiconductor wafer transported into a chamber and placed on support pins. The semiconductor wafer held in close proximity to a light-transmittable plate by the holding part is preheated by a hot plate, and is then flash-heated by a flash of light emitted from flash lamps. Thereafter, the holding part moves downwardly to transfer the semiconductor wafer to the support pins, and the semiconductor wafer is transported out of the chamber. Then, a new semiconductor wafer is transported into the chamber. The holding part is adapted to perform such a series of operations of moving upwardly and downwardly also when in a standby condition pending the transport of the first semiconductor wafer in a lot into the chamber.

Abstract: A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

Abstract: A heating device for cup-shaped receptacles such as coffee cups. The device includes a support for supporting a receptacle with the support including a heating mechanism and being designed to generate and guide heated air or radiating heat to the receptacles in order to heat a surface of the receptacle. The surface is preferably the whole inner or outer surface of the cup-shaped receptacle.

Abstract: A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency.

Abstract: A radiant heating assembly for use with systems for heating an enclosed space by circulating a fluid through a closed tubing arrangement is provided. The inventive radiant heating assembly is made up of a radiant heating panel and tubing. The radiant heating panel is made up of a radiant heat transfer plate having a length and center line, and an elongated C-shaped or side opening receptacle that extends along the center line of the plate for receiving the tubing. A plurality of depressions extends along an inner surface of the C-shaped receptacle that interfaces with the plate. The tubing conforms to these depressions, thereby allowing the radiant heating assembly to achieve greater radiant heat dissipation capacity and efficiency.

Abstract: In the present invention, a thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to the photolithography process are measured, and an improvement in-plane tendency Za improved by change of the temperature settings is subtracted from an in-plane tendency Z of the measured line widths within the substrate to calculate an in-plane tendency Zb of the line widths within the substrate after change of temperature settings. The improvement in-plane tendency Za is calculated using the following expression. Za=?1×?×MT (?: a resist heat sensitivity, M: a calculation model, and T: temperature correction values for thermal plate regions).

Abstract: In the present invention, a thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and, from an in-plane tendency of the measured line widths, an in-plane tendency improvable by temperature correction and an unimprovable in-plane tendency are calculated using a Zernike polynomial. An average remaining tendency of the improvable in-plane tendency after improvement obtained in advance is added to the unimprovable in-plane tendency to estimate an in-plane tendency of the line widths within the substrate after change of temperature setting.

Abstract: A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature.

Abstract: According to one embodiment, a heat treatment apparatus includes a light emitting unit to emit light to irradiate a wafer, a processing unit with a stage section and a control unit. The control unit implements a first irradiation to irradiate the light onto the wafer. After the first irradiation, the control unit changes at least one selected from a disposition of the wafer, a distribution of an intensity of the light on a major surface of the stage section along a circumferential edge direction of the wafer, and a distribution of a temperature of the wafer in a supplemental heating by the stage section along a circumferential edge direction of the wafer. After the changing, the control unit implements a second irradiation to irradiate the light onto the wafer. Durations of the first irradiation and the second irradiation are shorter than a time necessary for the changing.

Abstract: High reflectance element IR lamp module and method of firing multi-zone IR furnaces for solar cell processing comprising lamps disposed backed by a flat or configured plate of ultra-high reflectance ceramic material. Optionally, the high reflectance plate can be configured with ripples or grooves to isolate each lamp from adjacent lamps in the process zone. Furnace cooling air is exhausted and recycled upstream for energy conservation. Lamp spacing can be varied and power to each lamp individually controlled to provide infinite control of temperature profile in each heating zone. The high reflectance element may be constructed of dense ceramic fiber board, and then coated with high reflectance ceramic composition, and baked or fired to form the finished element.

Abstract: To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

Abstract: Disclosed is a substrate rotating and oscillating apparatus for a rapid thermal process (RTP), that oscillates an oscillation plate using an oscillation motor moved by an elevating unit. Rotational shafts of the oscillation motor comprise lower and upper center rotational shafts mounted on a central axis of the motor, and an eccentric shaft mounted between the lower and the upper center rotational shafts as deviated from the central axis. An oscillation cam is mounted to the eccentric cam. The oscillation plate has an oscillation hole for inserting the oscillation cam therein. A bearing is mounted between the oscillation cam and the eccentric shaft such that the oscillation cam rotates independently from the eccentric shaft. The oscillation plate supports the whole multipole-magnetized magnetic motor or maglev motor. Accordingly, the substrate can be uniformly heated by both rotating and all-directionally oscillating the substrate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: The present invention discloses a nail gel solidification apparatus including a housing, a control circuit board, a plurality of reflecting lamp holders, a plurality of light emitting diode (LED) elements and a power supply module. By replacing the traditional lamp with the LED elements of the reflecting lamp holders, the invention provides longer using life and lower power consumption and reduces the solidification time for nail gels.

Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

Abstract: A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

Abstract: A heating device includes a high-frequency electrode embedded substantially in parallel with a heating surface of a ceramics base in the vicinity of the heating surface. A conducting hole toward this high-frequency electrode is formed in a back face of the ceramics base. This high-frequency electrode has a trapezoidal cone-like concave section toward the conducting hole at a region opposed to the conducting hole.

Abstract: In a substrate annealing apparatus, a substrate holder unit including a substrate stage made of carbon with a high emissivity or a material coated with carbon is accommodated in a vacuum chamber to be liftable. Also, a heating unit having a heat radiating surface facing the substrate stage is disposed above the substrate holder unit within the vacuum chamber. The substrate annealing apparatus brings the substrate stage close to the heat radiating surface so that a substrate mounted on the substrate stage can be heated by radiant heat from the heat radiating surface while the heat radiating surface is not in contact with the substrate. The substrate holder unit includes a radiating plate and a reflecting plate made of one of a metal carbide, a metal nitride, and a nickel alloy.

Abstract: Provided is an infrared radiation cooker in which heat from an infrared lamp is directly applied onto food being grilled, to thus cook the upper and inner parts of the food, as well as onto a rotating pan, to thus simultaneously cook the lower part of the food. As a result, the food cooks evenly throughout without burning or creating residual odors from above to below as well as from outer to inner, and further the rotating pan of respectively different structures can be selected depending on an intended cooking purpose, to thereby adjust height of the rotating pan, which changes a heat intensity, to thus vary a cooking style, and which can be used to boil, grill or roast foods as one would like.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: The present invention provides a cooling device used for a process for heating and cooling a substrate constituting an image display apparatus that uses electron emitting devices. The cooling device includes a cooling plate located opposite the substrate to absorb radiation heat from the substrate. The cooling plate is provided with a high emissivity area in a pattern located opposite to a low emissivity area of the substrate. This suppresses a variation in a temperature distribution in the substrate during cooling, thus preventing the substrate from being distorted or damaged.

Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

Abstract: A degassing from a susceptor heated at a high temperature in a vacuum atmosphere is suppressed. The susceptor is disposed between a heater and a substrate and partitions a space in the chamber into a first chamber space where the heater is placed and a second chambers space where the substrate is placed, and the surface of the susceptor facing the second chamber space is coated with a pyrolytic carbon layer (15) of thickness of 10 ?m to 50 ?m.

Abstract: Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

Abstract: A vacuum thermal annealing device is provided having temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: A thermal processing system has a processing vessel 4, a support post 30 stood on the bottom wall of the processing vessel 4, and a support table 32 internally provided with a heating means 38 and supported on the support post 30. A workpiece W is placed on the upper surface of the support table 32 and is subjected to a predetermined thermal process. The upper, the side and the lower surface of the support table 32 are covered with heat-resistant covering members 72, 74 and 76 to prevent the thermal diffusion of metal atoms causative of contamination from the support table 32. thus, various types of contamination, such as metal and organic contamination, can be prevented.

Abstract: Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.

Abstract: Methods and systems are provided for optimally curing a deposited curable material film using a light source and feedback system for monitoring the degree of curing using detected optical properties of the film. Operational parameters of the light source (e.g., power) are adjusted by a control system in response to the detected optical properties of the film. The curing system includes at least one light source in optical communication with an uncured material, a detector for monitoring an optical property of the curing material, and a feedback system for controlling the light emitted from the light source in response to the detector.

Abstract: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes a placement/bake unit. A substrate that has been subjected to exposure processing in the exposure device is subjected to cleaning and drying processing in a second cleaning/drying processing unit, and is then transported to a placement/heating unit. In the placement/heating unit, the substrate is subjected to post-exposure bake processing.

Abstract: An apparatus for manufacturing a semiconductor device includes a treatment chamber in which a working substrate is disposed; a plurality of lamps provided above the treatment chamber; and a reflector provided behind the lamps relative to a direction towards the working substrate, spatially controlling an in-plane distribution of reflection rate of light beams from the lamps, and irradiating the working substrate with light from the lamps.

Abstract: Example embodiments relate to micro-heaters, micro-heater arrays, methods for manufacturing the micro-heater, and methods for forming a pattern using the micro-heater. A micro-heater according to example embodiments may include a metal pattern formed on a substrate. A support may be formed beneath the metal pattern, the support securing the metal pattern to the substrate while spacing the metal pattern apart from the substrate. A spacer may be formed on the substrate and adjacent to the metal pattern, a first distance from the substrate to the top surface of the spacer being greater than a second distance from the substrate to the top surface of the metal pattern. The distance between the micro-heater and a target substrate positioned above the metal pattern may be controlled by the spacer, thus allowing the formation of a relatively fine pattern on the target substrate.

Abstract: In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer.

Abstract: A method and system for generating control settings for a multi-parameter control system. The interdependencies of processing tools and the related effect on semiconductor wafers within a processing tool is factored into a mathematical model that considers desired and measured wafer quality parameters in the derivation of specific solutions of sets of possible quality parameter adjustments. A selection process determines a set of adjustments such as one that results in minimal changes to the process.

Abstract: Temperature measurement and heat-treating methods and systems. One method includes identifying a temperature of a first surface of a workpiece, and controlling energy of an irradiance flash incident on the first surface of the workpiece, in response to the temperature of the first surface. Identifying may include identifying the temperature of the first surface during an initial portion of the irradiance flash, and controlling may include controlling the power of a remaining portion of the irradiance flash. The first surface of the workpiece may include a device side of a semiconductor wafer.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

Abstract: Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.

Abstract: Annular reflecting rings are removably mounted on the upper and lower sides of a chamber side portion of a chamber. An annular recessed portion is formed sandwiched between the lower end face of the upper reflecting ring and the upper end face of the lower reflecting ring to surround a holding part for holding a semiconductor wafer. The outer peripheral surface of the recessed portion communicates with a transport opening. The formation of the recessed portion prevents the light emitted from halogen lamps and flash lamps from being non-uniformly reflected around the holding part to enter a semiconductor wafer, thus improving the uniformity of the in-plane temperature distribution in the semiconductor wafer during heat treatment.

Abstract: In an apparatus for heat-treating a substrate, a substrate holder unit including a substrate stage which is made of carbon or a carbon-covered material having high radiation ratio is arranged in a vacuum chamber to be vertically movable. A heating unit including a heat dissipation surface which opposes the substrate stage is provided above the substrate stage in the vacuum chamber. The substrate stage is moved close to the heat dissipation surface to heat the substrate in noncontact with it with radiation heat from the heat dissipation surface. The substrate holder unit includes a radiation plate and a reflection plate.

Abstract: In a heat treatment apparatus, a substrate held by a holding part is irradiated with light emitted from halogen lamps to perform preheating thereon and irradiated with a flash of light emitted from flash lamps to perform flash heating thereon. Part of light which is emitted from the halogen lamps and goes toward the flash lamps passes through a window hole formed in a peripheral-light shielding member and enters the substrate held by the holding part, and its energy is used for the preheating on the substrate. On the other hand, the remaining light is blocked out by the peripheral-light shielding member.

Abstract: An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.

Abstract: A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is maintained for a long period of use, and the manufacturing cost of the module is decreased. The ceramic heater includes a ceramic heater body and a cooling module cooling the heater body, and the cooling module has a structure formed by arranging a pipe in a trench formed in a plate-shaped structure.