Abstract: An ultra-rapid freezing device (100) adapted for cooling a sample (1), includes a substrate chip (10) being adapted for cooling the sample (1), and at least one sample carrier (20) being adapted for accommodating the sample (1) and including at least one heatable support (21), through which the at least one sample carrier (20) is attached to the substrate chip (10). Preferably, the at least one sample carrier (20) is attached to the substrate chip (10) in a suspended manner. Furthermore, a method of ultra-rapid freezing a sample (1) is described. The at least one sample carrier (20) can be switched between a heated state at which a thermal gradient is formed relative to the substrate chip (10) and a cooled state at which a thermal equilibrium is formed relative to the substrate chip (10).

Abstract: A substrate stage mechanism (10) configured to place a substrate (W) thereon inside a process container of a substrate processing apparatus (100) and having a substrate heating function for heating the substrate (W) includes a substrate table (11) including a base body (11a) configured to place the substrate (W) thereon and a heating element (13) provided to the base body (11a) and configured to heat the substrate (W); a support member (12) having an upper end connected to the substrate table (11) and a lower end attached to the process container; and a heating device (17) configured to heat the support member (12).

Abstract: A heat treating device (50) has a cooling sleeve that covers a treating vessel (56) and a heater (100). The cooling sleeve has a cylindrical base member (110) and a cooling pipe (112) spirally wound on the outer peripheral surface hereof. The cooling pipe (112) is brazed to the base member (110).

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.

Abstract: A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer.

Abstract: In a thermal processing unit, a substrate is held by a local transport hand to be transported between a transfer section and a heating unit, and subjected to a heat processing by the heating unit. Also, the local transport hand is cooled by a cooling plate in the transfer section.

Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: A heater is disclosed. The comprises a housing; a reflector; and a pair of opposite connectors supported by the reflector and configured to support opposite ends of a heating element. The reflector is movable between a plurality of positions relative to the housing.

Abstract: A solder bump is formed on a substrate by using a heating device where a lid structure blocks hot air from directly blowing against a solder composition. The heating device can reduce high-temperature oxygen molecules that come into contact with the solder composition, oxidation of the solder composition is suppressed. As a result, although the hot air is used for heating, a solder bump can be formed by the liquid-like solder composition. Further, because the lid structure is uniformly heated by the hot air, radiation heat from the lid structure is also uniform, and a container is more uniformly heated. In addition, because the hot air is suppressed from directly blowing against a liquid surface, the liquid-like solder composition is not scattered by the hot air.

Abstract: The ECOWAVE 1.2 is an infrared heater that can produce heat in a more efficient manner than other infrared heaters on the market today. We have utilized specific short wave infrared bulbs and specifically manufactured and oriented heat dissipation material, and housing, to capture the maximum amount of infrared waves emitted from the heat source thus providing an optimum ambient temperature rise for a minimal amount of electricity consumed. We have also designed a heater core, in two separate configurations, that can be used in a multitude of capacities depending on the size of the heating case desired, heat required and space available.

Abstract: A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A vertical heat processing apparatus includes a process chamber (5) defining a process field (A1) configured to accommodate a plurality of target substrates (W) supported at intervals in a vertical direction. The apparatus further includes a heating furnace (8) surrounding the process chamber (5) and including an electric heater (15), and an electric blower (16) configured to send a cooling gas into the heating furnace (8). A control section (22) executes, in order to converge the process field (A1) to a target temperature, performing power feeding to the heater (15) to heat up the process field (A1) to a predetermined temperature immediately below the target temperature, and at a time point when the process field (A1) reaches the predetermined temperature, decreasing the power feeding to the heater (15), and supplying the cooling gas from the blower (16) to forcibly cool the process field (A1).

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.

Abstract: There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.

Abstract: A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type.

Abstract: A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

Abstract: Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

Abstract: A heat treatment apparatus for performing prescribed heat treatment to a subject (W) to be treated is provided with a processing chamber in which air can be exhausted; a mounting table arranged in the processing chamber, for placing on an upper plane the subject to be treated; a plurality of thermoelectric conversion elements arranged on an upper part of the mounting table; a light transmitting window for covering a ceiling portion of the processing chamber airtight; and a gas introduction unit for introducing a required gas into the processing chamber. A heating unit which includes a plurality of heating light sources including a semiconductor light emitting element for emitting heating light to the subject to be treated, is provided above the light transmitting window. Thus, heating efficiency is improved and temperature can be increased and reduced at a higher speed for the subject to be treated.

Abstract: An analytical furnace includes a predictive temperature control which is trained to model crucible temperature during analysis by employing a pair of temperature sensors, with one sensor being mounted in the furnace in fixed relationship and a second sensor which can be positioned within a crucible for training and tuning a crucible temperature profile, such that the crucible temperature in which a sample is placed is modeled and its response to the application of energy to the furnace in accordance with the furnace's dynamic thermal characteristics is known. By modeling the temperature profile within a crucible, the furnace can be controlled to provide a faster, more accurate analysis and prevent excessive overshooting of temperature as desired temperature plateaus are approached.

Abstract: An oven is provided for curing or reflowing compounds on objects, such as lead frames or other substrates. The oven comprises a heating chamber, a heating assembly mounted in thermal communication with the heating chamber to provide heat thereto, and a support assembly for supporting the object in the heating chamber for heating. The heating assembly and support assembly are configured to be movable relative to one another for controllably positioning the object at variable distances with respect to the heating assembly. Heating of the object according to a heating profile can thus be achieved by controlled heating of the object at different temperatures by positioning the object at different distances with respect to the heating assembly during the heating process although there is a single heating zone.

Abstract: Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

Abstract: A heating arrangement heats a first major surface of a workpiece with an illumination energy such that a first portion of the illumination energy is directly incident upon the first major surface of the workpiece and a second portion of the illumination energy is directed such that, at least initially, the second portion would miss the first major surface. A reflector, having a central opening, reflects at least some of the second portion of the illumination energy onto the peripheral edge region of the workpiece for preheating compensation. The reflector is configured for shadow-free exposure of a second, opposing major surface of the workpiece to a flash heating energy. A workpiece manipulation arrangement is described to provide for dynamic preheating movement to vary a heating profile across the workpiece and, thereafter, move the workpiece to a flash heating position. Automatic workpiece centering is featured by the manipulation arrangement.

Abstract: A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.

Abstract: A heating arrangement heats a first major surface of a workpiece with an illumination energy such that a first portion of the illumination energy is directly incident upon the first major surface of the workpiece and a second portion of the illumination energy is directed such that, at least initially, the second portion would miss the first major surface. A reflector, having a central opening, reflects at least some of the second portion of the illumination energy onto the peripheral edge region of the workpiece for preheating compensation. The reflector is configured for shadow-free exposure of a second, opposing major surface of the workpiece to a flash heating energy. A workpiece manipulation arrangement is described to provide for dynamic preheating movement to vary a heating profile across the workpiece and, thereafter, move the workpiece to a flash heating position. Automatic workpiece centering is featured by the manipulation arrangement.

Abstract: A device for soldering contacts on semiconductor chips. A chip is held on a chip mount by a chuck and is heated from a side facing away from the wafer by means of a radiation source, so that a solder applied to a side facing the wafer is melted. A flushing device, having a plate with a window, a gas channel, and a gas outlet opening for a forming gas, is arranged at the window, is fitted parallel to the wafer. The chip is moved vertically in relation to the wafer, pressed onto the wafer through the window, and soldered on by means of isothermal solidification.

Abstract: A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.

Abstract: A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.

Abstract: A light source including a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. The thermal processing apparatus which uses the flash lamps, is thus capable of readily controlling the intensity of irradiation.

Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

Abstract: In a thermal processing apparatus, using a lamp for heating a substrate, an opening is formed for a camera unit, which is used to image portions of an auxiliary ring supporting the substrate, to obtain the position of the center of the auxiliary ring. The camera further images the substrate to determine the center of the substrate before the thermal processing apparatus receives and places the substrate on the auxiliary ring. The thermal processing apparatus moves the substrate so that the center thereof coincides with the center of the auxiliary ring, and thereafter places the former on the latter. Thus, the auxiliary ring can be designed to reduce overlaps of the auxiliary ring and the outer edge of the substrate while overlaps can be uniform over the entire circumference of the substrate to improve temperature uniformity of the substrate.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers is disclosed. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: A method and apparatus involve providing a supply of nitrogen gas, heating the supply of nitrogen gas to a temperature, and ejecting the heated nitrogen gas through the exhaust line of the baking chamber on a periodic basis. The temperature is between a temperature of the hot plate and a temperature that is less than a glass transition temperature of a film being treated.

Abstract: It is an object of the invention to provide a substrate processing equipment that can predict a temperature of a substrate and easily control temperature of the substrate. Formed in a reactor (processing chamber) 3 are four temperature adjustment zones, of which setting and adjustment of temperature can be made by zone heaters 340-1 to 340-4. A temperature controller 4 mixes temperatures detected by inner thermocouples 302-1 to 302-4 and outer thermocouples 342-1 to 342-4 to calculate predicted temperatures of substrates by means of the first-order lag calculation on the basis of time constants of temperatures of substrates heated by the zone heaters 340-1 to 340-4. Also, the temperature controller 4 calculates electric power values (operating variables) for the zone heaters 340-1 to 340-4 with the use of predicted temperatures of substrates to output the same to the zone heaters 340-1 to 340-4.

Abstract: A toaster uses radiant heat at infrared wavelengths optimized for producing rapid and uniform toasting of a food product. The infrared wavelengths of the radiated heat are selected for optimum speed and quality (browning and moisture content) of the food product. The selected infrared wavelengths of the radiated heat may also effectively defrost a food product. Defrosting of the food product by the infrared radiated heat adds very little time in obtaining a desired toast color to the food product. A plurality of infrared wavelengths of radiated heat may also be used, wherein the plurality of infrared wavelengths are selected for optimal heat penetration and surface browning of the food product. Shorter wavelengths for browning and slightly longer wavelengths to penetrate the food product for evaporating the moisture therein to allow surface browning by the shorter wavelengths.

Abstract: An apparatus includes a stationary supporting base for mounting a semiconductor wafer thereon, and a rotatable heating unit having a plurality of heating lamps located above the wafer. The stationary supporting base is fixed and the rotatable heating unit rotates horizontally on a rotating axis. Therefore, the uniformity of wafer heating can be improved, and the breakage or the warpage of the wafer can be prevented.

Abstract: A bake unit includes a cooling plate for cooling a substrate and a lift pin assembly for loading a substrate on the cooling plate. When a wafer is cooled on the cooling plate, a guide groove is formed at the cooling plate to allow a space between the wafer and the cooling plate to communicate with the exterior. Thus, an inner pressure of the space is maintained to be equal to an outer pressure thereof.

Abstract: The device is a seat trim heater. It employs electric infrared lamps to heat the seat trim before the trim is placed over the frame and cushion material of the seat. The device consists of a basic frame on which the trim is placed. The frame is made from a series of adjustable fabricated parts. Within this frame are infrared heaters and reflectors. The reflectors can direct the infrared heat both to the front and back so that the whole seat trim can be heated. Integral to the system is the control box that controls the heating of the seat trim. The seat trim heater uses instant on/off T-3 quartz lamps. The control box consists of a control panel that is NEMA rated, a disconnect switch, appropriate fusing, a SCR and appropriate circuitry. Further, the control panel allows the heat to be infinitely variable.

Abstract: A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.

Abstract: Provided is a bake system. The bake system includes a heating plate having a heating plate having a substrate on an upper surface. A case is disposed below the heating plate to support the heating plate; a first cover is disposed above the heating plate and coupled to the case to form a chamber; and a second cover is disposed in the first cover, and directly above the substrate in the bake process for preventing heat convection on the substrate.

Abstract: Embodiments of the invention provide a fluid processing method and apparatus. The apparatus includes a substrate support assembly positioned in a processing volume, a disk shaped member positioned in the processing volume in parallel orientation with a substrate supported on the substrate support assembly, a fluid outlet positioned in a central location of the disk shaped member, and a plurality of turbolators positioned on an upper surface of the disk shaped member, the turbolators being configured to generate a uniform turbulent flow of fluid traveling from the fluid outlet to a perimeter of the substrate. The method includes flowing a heated processing fluid over a plurality of turbolators that are positioned under a substrate being processed to control the temperature of the substrate during processing.

Abstract: A heat treatment apparatus for use in batch heating/wafer processing is provided, which comprises a process chamber for receiving a wafer boat, at least a heating element comprising a substrate body configured to form an electrical heating circuit for at least one heating zone and encapsulated in a continuous overcoat layer, a heat reflector comprising a heat reflective surface disposed on the heating element, and the heating element has a ramp rate of at least 1° C. per second for heating the wafers in the wafer boat.

Abstract: A heater includes a heating member formed in a plate shape that includes a substrate-heating surface on which a substrate is mounted and a heating member rear surface which is on the opposite side of the substrate-heating surfaces. The heater also has a resistance heating element embedded therein. An auxiliary member is placed on the side of the heating member rear surface of the heating member and has an opposing surface which opposes the heating member rear surface. A planar gas path for gas ejected on the substrate-heating surface is formed between the heating member rear surface and the opposing surface.

Abstract: A system and method for determining the temperature of a semiconductor wafer at the time of thermal contact of the semiconductor wafer with a temperature sensing element. According to the invention, a temperature profile of the temperature sensing element is recorded from the time of thermal contact up to the time of thermal equilibrium between the semiconductor wafer and the temperature sensing element and the temperature of the semiconductor wafer at the time of thermal contact is determined on the basis of a time period between the time of thermal contact and the time of thermal equilibrium and the temperature TG of the semiconductor wafer reached at the time tG of thermal equilibrium is determined by back calculation with the aid of an equation derived from Newton's law of cooling.

Abstract: An adjusting technology of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object.