Abstract: A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: A method for manufacturing an image display panel includes the steps of heating a substrate for the image display panel having a different-emissivity member on at least a part of one surface of the substrate, with the member having an emissivity different from that of the substrate, and then placing a cooling plate opposite the heated substrate to absorb radiation heat from the substrate to cool the substrate. The cooling plate has a different-emissivity area in a pattern that can suppress a temperature distribution that may be created in the substrate if the substrate is cooled using a cooling plate with a uniform emissivity, with the different-emissivity area having an emissivity different from that of other areas.

Abstract: Disclosed is a baseball and/or softball bat warmer system. Each individual bat heater includes an elongated outer tubular member having a closed bottom surface. An inner tubular member is spaced inwardly from the outer tubular member forming a space therebetween. A radiation type heating element is positioned between the inner and outer members so that it extends around the barrel portion of the bat for even heating thereof. The system also utilizes a heat seal positioned on the upper portion of the outer tubular member to protect the handle and grip portion of the bat from excessive heat.

Abstract: A heating unit heats a work piece 6 by heat conduction from a heat conducting plate 4 on which light from a light source 1 is irradiated, wherein the heat conducting plate 4 comprises a holding member 2 having optical transparency, and a heat conducting layer 3 which is provided on a surface of the holding member 2, and absorbs light emitted from a light source 1 and is transmitted through the holding member 2, so as to generate heat. The heating unit has the heat conducting plate 4 in which deformation does not occur, and temperature thereof changes rapidly.

Abstract: A heating chamber which can be used during a reflow process to form a metal wiring having a multi-layered writing structure and a method of heating a wafer using the same, are provided. The heating chamber is movable upward and downward between the upper process position and the lower loading position, and includes a pedestal having a supporting surface for supporting a wafer, a cover installed above the pedestal to form a processing area together with the supporting surface when the pedestal is placed in its raised process position and a heating unit for heating the waver. In the method of heating the wafer, the temperature in the processing area is maintained suitable for heating the wafer before the wafer is loaded onto the supporting surface, the wafer is loaded onto the supporting surface and the loaded wafer is heating in the processing area.

Abstract: The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

Abstract: A system and method for removing wrinkles from the covering material of seats for automobiles and other vehicles. The invention may be implemented in a seat dewrinkling oven that includes front and rear heaters that conform to the shape of the seat being heated. In particular, a front heater may be employed that includes a vertically oriented portion for directing heat at the vertically oriented back portion of a front seat surface and a horizontally oriented portion for directing heat at the horizontally oriented bottom portion of the seat front surface. Preferably medium wavelength infrared heating elements are employed in the heaters to provide better heat penetration and dewrinkling.

Abstract: A heating arrangement heats a first major surface of a workpiece with an illumination energy such that a first portion of the illumination energy is directly incident upon the first major surface of the workpiece and a second portion of the illumination energy is directed such that, at least initially, the second portion would miss the first major surface. A reflector, having a central opening, reflects at least some of the second portion of the illumination energy onto the peripheral edge region of the workpiece for preheating compensation. The reflector is configured for shadow-free exposure of a second, opposing major surface of the workpiece to a flash heating energy. A workpiece manipulation arrangement is described to provide for dynamic preheating movement to vary a heating profile across the workpiece and, thereafter, move the workpiece to a flash heating position. Automatic workpiece centering is featured by the manipulation arrangement.

Abstract: A reactor chamber is positioned between a top array of LED heat lamps and a bottom array of LED heat lamps. The LED heat lamps forming the top and bottom arrays are individually or controllable in groups such that power output along each array of LED heat lamps can dynamically differ. The LED lamps can be controlled in response to, for example, feedback from chamber sensors, a desired temperature profile, and a failed LED lamp. In this way, the methods and systems described herein can dynamically compensate for operational characteristics of the reactor chamber. In one configuration, the LED heat lamps are arranged in a rectangular pattern. In some configurations, the LED heat lamps are arranged in a circular or a concentric pattern.

Abstract: The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and method are disclosed which provides a segmented cold plate situated within a process chamber, wherein a plurality of segments of the cold plate are operable to radially translate between an engaged position and a disengaged position, wherein a substrate holder may pass between the plurality of segments when the segments are in the disengaged position. According to another aspect, an elevator is operable to linearly translate a substrate residing on a substrate holder between a heating position proximate to a heater assembly and a cooling position proximate to the segmented cold plate.

Abstract: An improved apparatus is provided for curing powdered coatings on the face of porous wood products, such as medium density fiberboard (MDF), wherein a pair of inclined infrared catalytic heaters are used to apply heat directly onto the side edges of the board. In addition, catalytic heaters that are normally used to heat and cure the face surface of the board are moved father back to reduce their effectiveness and to limit out-gassing of entrapped air from the inner low density core of the board. This arrangement also allows the coating to cure at the side edges of the board at approximately the same rate as the face of the board, promoting a more uniform curing of the powder coating.

Abstract: A member provided around a susceptor for mounting a semiconductor in a chamber of a semiconductor production system. The member has a face opposing the susceptor and a center line average surface roughness of the face opposing the susceptor is 0.5 ?m or less. Alternatively, the face opposing the susceptor has a thermal emissivity ? of 0.5 or lower. The member can also be a liner [4] having a supported face [4] whose area is not more than 20 percent of that of the face [4] opposing the susceptor.

Abstract: An apparatus and a method for controlling the temperature of a substrate during substrate processing. The apparatus comprises a substrate table having a thermal surface supporting the substrate. The apparatus also comprises a first thermal assembly arranged in the substrate table and comprising a plurality of thermoelectric modules, each of the plurality of thermoelectric modules having a thermoelectric surfaces such that the plurality of thermoelectric modules defines a plurality of thermoelectric surfaces. In this apparatus, the plurality of thermoelectric surfaces is in thermal communication with the thermal surface and includes various shapes of thermoelectric surfaces, and the plurality of thermoelectric surfaces is configured to substantially completely underlie the thermal surface.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: A method of effecting high temperature vacuum heating and cooling suitable for conducting heat treatment to be performed on components used in a display apparatus. The heating/cooling method includes the steps of: heating a plate-like member placed in a reduced pressure atmosphere in a chamber by heating means opposed to the plate-like member; and cooling the plate-like member by a cooling plate which is opposed to the plate-like member, with the heating means therebetween, the cooling plate having a heat reflecting function. The cooling plate has an emissivity of not less than 0.50 but not more than 0.80 so as to minimize a sum of a requisite time for the heating step and a requisite time for the cooling step.

Abstract: A disc-type unit 10 adjusts temperature of a control face 14 by means of a heater 12 and coolant, with a hollow plate 11 to which the heater 12 is secured, a cavity 13 formed in the hollow plate 11 and a piping 20 for supplying the coolant to the cavity 13, the piping 20 opening in the cavity 13, and the coolant being jetted to a portion to which the heater 12 is secured or a portion in proximity thereto and which shows high temperature rise when energizing the heater 12.

Abstract: A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

Abstract: A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

Abstract: A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.

Abstract: The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.

Abstract: A light irradiation heat treatment apparatus and method may use a plane-shaped light irradiation heating component, facing one surface of a workpiece supported in a furnace, to raise the temperature of the workpiece. The temperature of the workpiece is raised by setting an intensity distribution for light irradiated from the light irradiation heating component in accordance with the resistivity of the workpiece. Thereafter, the workpiece is irradiated with light having the set light intensity distribution to raise its temperature.

Abstract: A chamber has a wall surface fitted with a liner. The liner is removably provided to the chamber with no fixed relation therebetween. By simply opening a light source to remove a heat diffusion plate, a hot plate and a tubular member from the chamber, the liner can be easily detached accordingly from the chamber. When a semiconductor wafer cracks to litter the chamber with its fragments, the chamber can be easily cleaned by simply detaching the liner. The liner has an outer surface subjected to surface roughening by honing. When a flash lamp emits flashlight of considerably high intensity, the roughened outer surface of the liner serves to block this flashlight. As a result, the metal surface inside the chamber is prevented from being exposed to the flashlight emitted from the flash lamp.

Abstract: A heating stage according to the present invention comprises a flat stage portion on which a work piece is placed, a glass section having cylindrical portion in which two or more lamps are disposed as a heating unit, and a metal section having a cylindrical portion and a bottom portion forming an inner space by fixing the metal section and the glass section integrally wherein the inner space is under reduced pressure, and inert gas is filled.

Abstract: Provided is a semiconductor manufacturing system capable of loading a plurality of semiconductor wafers into a vertical reaction tube, and performing a thermal process. The semiconductor manufacturing system includes a first wafer loading boat, a second wafer loading boat, a plate cap, a door plate and a lifting system. The first wafer loading boat is mounted in the reaction tube and includes a plurality of holder supporters that support a wafer holder in a shape of a board, the wafer holder being loaded vertically at a predetermined interval and on which the semiconductor wafer is rested on. The second wafer loading boat is inside or outside the first wafer loading boat and has a wafer supporter that supports the semiconductor wafer. The lifting system moves either the first wafer loading boat or the second wafer loading boat vertically and separates the semiconductor wafer, which is loaded on the wafer holder, from the wafer holder at a predetermined height.

Abstract: A processing system for thermally treating a substrate including a temperature controlled thermal treatment chamber and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber. A method for thermally treating a substrate is also provided.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: The present invention comprises a fully automated, fabrication compliant furnace with the advantages of the horizontal and most of the advantages of the vertical furnace. One embodiment of the present invention is that it implements a multi-degree motion robot arm to move wafers from a loading area to a WIP station where the wafers are then loaded into wafer boats on a rotating cantilever system or directly onto a specialized and reconfigurable paddle designed to hold wafers. The wafers may be loaded in the horizontal processing position as well as the vertical processing position. Multiple levels of the semi-toroidal horizontal processors allow for multiple batches of wafers to be loaded, processed, cooled and unloaded by the robot arm. The present invention reduces the footprint of the traditional horizontal or vertical furnaces, increases capacity and throughput, and allows for direct tube transfer.

Abstract: After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a nitrogen gas flow from an inlet toward an outlet passage is produced prior to heat treating a semiconductor wafer. In this state, flash lamps are turned on to cause momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate, etc. The scattered particles are removed by the nitrogen gas passing through a bottom portion of the chamber and discharged through the outlet passage. The particles are easily removed due to the flash lamps being turned on a predetermined number of times at fixed time intervals while folowing the nitrogen gas. The heat treatment apparatus has a light-emission characteristic and easily removes the particles in the chamber.

Abstract: A radiant heating arrangement with a high infrared heating capacity for treatment chambers provides a vacuum-compatible radiant heating system with which it is possible to achieve considerable radiation levels reliably. The radiant heating arrangement includes a tube that is permeable to infrared radiation. The tube extends into the treatment chamber and penetrates the wall of the chamber with at least one end. A source of infrared radiation is situated inside the tube with the inside of the tube being isolated from the atmosphere inside the treatment chamber.

Abstract: A substrate heater is provided including a plate-shaped ceramic base having a first side defining a convex heating surface on at least a portion of which a substrate is placed, a resistance-heating element embedded in the ceramic base, and a tubular member joined to a central portion on an opposed second side of the ceramic base. The convex heating surface has a central portion and a peripheral portion, wherein the height of the heating surface decreases from the central portion toward the peripheral portion thereof.

Abstract: A susceptor is formed with a cavity having a tapered surface and a receiving surface. The gradient ? of the tapered surface with respect to the receiving surface is set to at least 5° and less than 30°, so that a semiconductor wafer received by the susceptor can be located on the receiving surface through the tapered surface while the semiconductor wafer can be protected against excess stress also when the surface of the wafer abruptly thermally expands due to flashlight irradiation and can be prevented from cracking in thermal processing. Thus provided are a thermal processing susceptor and a thermal processing apparatus capable of preventing a substrate from cracking in thermal processing.

Abstract: A substrate on which a resist solution is applied is mounted on a heating plate in a processing vessel. Then, a purge gas is supplied into the processing vessel, and heating is started. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided. When the thickness becomes a predetermined value or less, a control part causes a lift pin to upwardly move so as to increase the distance between the substrate and the heating plate. Thus, the heating value applied to the substrate decreases, and thereafter, only the solvent is volatilized without having a bad influence on a polymer in the resist film.

Abstract: A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

Abstract: Immediately after a cold substrate G is placed on a substrate table 3, a large electric power P1 is supplied to a heating element 32 embedded in the substrate table for a time period T1 so that temperature of the substrate table overshoots a target temperature, and thereafter zero or very small electric power P2 is supplied to the heating element for a time period T2 so that the temperature of the substrate table 3 is lowered to the target temperature while temperature of the substrate continues to rise up to the target temperature. When both the temperature of the substrate table and of the substrate reaches approximately to the target temperature after the time period T2 has elapsed, control of the electric power is entrusted to a PID controller.

Abstract: For wafer processing, wafers are transferred between a thermal treatment chamber and a thermal treatment installation. The treatment chamber has a top section and a bottom section between which the wafer is accommodated during treatment. The thermal treatment installation has a loading chamber having loading means and transport means. The wafer is place on a wafer support while in the loading chamber, wherein the wafer support is configured as a ring having support elements to support the wafer. The wafer support loaded with the wafer is inserted into the thermal treatment chamber so that the wafer and the wafer support are positioned between the top section and the bottom section. The wafer is individually processed in the thermal treatment chamber. After processing the wafer, the wafer support is removed from the thermal treatment chamber.

Abstract: As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

Abstract: In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

Abstract: In a thermal processing apparatus (1), an upper opening (60) is closed by a transparent plate (61) and a light emitting part (5) emits light through the upper opening (60). Also provided are a susceptor (72) for supporting a substrate (9), a hot plate (71) for heating the susceptor (72) and a cover member (21) between the transparent plate (61) and the susceptor (72). The susceptor (72) has a recessed portion whose depth is larger than the thickness of the substrate (9), a lower surface of the substrate (9) is supported by a bottom surface of the recessed portion, and a periphery of the substrate (9) is surrounded by the side wall portion of the recessed portion. During processing of the substrate (9), the cover member (21) is moved down and brought into contact with an upper end of the side wall portion to close the recessed portion.

Abstract: A wafer, and a tungsten filament radiation heating source comprising at least one lamp arranged in a ring substantially surrounding the wafer edge. The radiation heating source irradiates the semiconductor wafer with radiation directed at the edge of the wafer, so that the radiation is adapted to penetrate the wafer edge and travel between the upper and lower surfaces into a central portion of the wafer sufficient to heat the wafer. The radiation-heating source may also have a reflector for reflecting radiation into the wafer edge, and at least one radiation and/or convection heating source mounted above or below the stage for directly heating one or both of the wafer upper and lower surfaces simultaneously with the radiation heating source surrounding the wafer.

Abstract: On the occasion of producing an image display apparatus, in order to suppress the bend and breakage of a substrate by uniformly heating the substrate which constructs a chamber which contains the image display apparatus, a plurality of heaters are located in opposition to both sides of the substrate in a vacuum chamber, which are further surrounded by a heat reflecting member, a partitioning member is located between end faces of the substrate and the heat reflecting member, and the substrate is heated.

Abstract: A novel apparatus for heat treating semiconductor wafers includes a heating device which comprises an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. The tuning devices adjust the overall irradiance distribution of the light energy sources. The tuning devices can either be active sources of light energy or passive sources which reflect, refract, or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A thermal processing apparatus, performing processing accompanied with heating on a substrate, having an upper lamp group directed toward a prescribed direction and a lower lamp group perpendicularly intersecting with the upper lamp group is provided with a lower reflector between the upper and lower lamp groups. The lower reflector is so provided as to reflect light from lamps, included in the lower lamp group, present on both end regions in relation to the direction of arrangement. Thus, the thermal processing apparatus can efficiently irradiate an auxiliary ring with reflected light from the lower lamp group and improve temperature uniformity when heating the substrate.

Abstract: Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (?) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

Abstract: A lamp house stores twenty-seven flash lamps in such a state that a longitudinal direction of each of the twenty-seven flash lamps extends in a horizontal direction (Y-direction), and that the twenty-seven flash lamps are arranged in parallel to one another at equally spaced intervals in a horizontal direction (X-direction) perpendicular to the longitudinal direction. There is employed such a layout that a direction of substrate loading and unloading by a transport robot is perpendicular to the longitudinal direction of the flash lamps (the longitudinal direction of the lamp house). In this layout, the distance required for the transport robot to transfer a semiconductor wafer by slidingly moving a transport arm can be minimized to permit a compact transport robot, so that a thermal processing apparatus itself is compact and excellent in maintainability.

Abstract: An electric heater has multiple zones, wherein the multiple zones include at least one zone which is subject to high loading (e.g. bottom zone) and, at least one zone is a non-metal heating element, and the rest of the zones (e.g. middle zone and top zone) are metal resistance heating elements of light gauge overbent.

Abstract: A wafer support position control mechanism selectively positions a semiconductor wafer along an axis of excursion within a process chamber. An elevator tube protrudes through an orifice in the chamber surface and is connected at a first distal end to the wafer support. A compliant, dynamic seal within the orifice engages the elevator tube to form a gas curtain within a gap between the seal and the elevator tube to seal the process chamber. A moveable carriage is connected to the elevator tube at a second distal end for moving the wafer support along the axis of excursion. Rigid mechanical structure couples the second distal end of the elevator tube to the moveable carriage.