Abstract: Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: Provided is a copper alloy sheet excellent in strengths, electroconductivity, and bending workability. The copper alloy contains Cr of 0.10% to 0.50%, Ti of 0.010% to 0.30%, and Si of 0.01% to 0.10%, where a ratio (in mass) of the Cr content to the Ti content is from 1.0 to 30, a ratio (in mass) of the Cr content to the Si content is from 3.0 to 30, with the remainder including copper and inevitable impurities. The copper alloy includes grains that have an average major axis length of 6.0 ?m or less and an average minor axis length of 1.0 ?m or less as measured on a microstructure of the copper alloy in a plane surface perpendicular to a transverse direction by FESEM-EBSP analysis.

Abstract: A lead-free solder alloy which can be used for soldering of vehicle-mounted electronic circuits and which exhibits high reliability is provided. The alloy consists essentially of Ag: 2.8-4 mass %, In: 3-5.5 mass %, Cu: 0.5-1.1 mass %, if necessary Bi: 0.5-3 mass %, and a remainder of Sn. In is at least partially in solid solution in the Sn matrix.

Abstract: A mechanical structure is provided with a crystalline superelastic alloy that is characterized by an average grain size and that exhibits a martensitic phase transformation resulting from a mechanical stress input greater than a characteristic first critical stress. A configuration of the superelastic alloy is provided with a geometric structural feature of the alloy that has an extent that is no greater than about 200 micrometers and that is no larger than the average grain size of the alloy. This geometric feature undergoes the martensitic transformation without intergranular fracture of the geometric feature.

Abstract: There is provided cryogenic milled nanophase copper alloys and methods of making the alloys. The alloys are fine grained having grains in the size range from about 2 to about 100 nanometers, and greater. The nanophase alloys possess desirable physical properties stemming from the fine grain size, such as potentially high strength. Some embodiments of the cryogenic milled copper alloys may also be tailored for ductility, toughness, fracture resistance, corrosion resistance, fatigue resistance and other physical properties by balancing the alloy composition. In addition, embodiments of the alloys generally do not require extensive or expensive post-cryogenic milling processing.

Abstract: An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together.

Abstract: There is provided cryogenic milled copper alloys and methods of making the alloys. The alloys are fine grained and possess desirable physical properties stemming from the fine grain size. Embodiments include desirable physical properties, such as potentially high strength. Some embodiments of the cryogenic milled copper alloys may also be tailored for ductility, toughness, fracture resistance, corrosion resistance, fatigue resistance and other physical properties by balancing the alloy composition. In addition, embodiments of the alloys generally do not require extensive or expensive post-cryogenic milling processing.

Abstract: Provided is a copper alloy plate that is for an FPC substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of Ag, Cr, Fe, In, Ni, P, Si, Sn, Ti, Zn, and Zr, contains no more than 1.0 mass % of Ag, no more than 0.08 mass % of Ti, no more than 2.0 mass % of Ni, no more than 3.5 mass % of Zn, and no more than 0.5 mass % of Cr, Fe, In, P, Si, Sn, and Zr by the total of the at least one element selected from the group, the remainder comprising Cu and impurities, has a conductivity of at least 60% IACS, has a tensile strength of at least 350 MPa, and has I(311)/IO(311) determined by X-ray diffraction in the thickness direction of the plate surface that satisfies the formula I(311)/IO(311)?0.5.

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.

Abstract: A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0?[Cu]?3.6×[Si]?67.5. In addition, the area fraction of the ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of the ? phase “?”%, and the area fraction of a ? phase “?”% satisfy 30?“?”?84, 15?“?”?68, “?”+“?”?92, 0.2?“?”/“?”?2, “?”?3, “?”?5, “?”+“?”?6, 0?“?”?7, and 0?“?”+“?”+“?”?8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy.

Abstract: The present invention relates to Cu33Al17 alloys and Cu33Al17-based bulk alloys and coatings that exhibit significantly increased hardness characteristics compared to traditional copper-aluminum alloys

Abstract: Copper alloys exhibiting enhanced oxidation resistance are provided by adding an amount of sulfur that is effective to enhance oxidative resistance. Such sulfur addition can be achieved by combining elemental forms of copper and sulfur and heating the mixture to form a molten alloy, or by forming a sulfur-rich pre-mix that is added to a base alloy composition. Forming a pre-mix provides improved homogeneity and distribution of the sulfur predominantly in the form of a metal sulfide.

Abstract: Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.

Abstract: Alloys are demonstrated based on copper, which have additions of manganese and sulfur and/or calcium as well as additional elements. The copper alloys are free from tellurium and lead, and are distinguished by high electrical conductivity and good machinability.

Abstract: An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.

Abstract: A secondary alloyed 1N copper wire for bonding in microelectronics contains one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.09 wt % and about 9.9 wt %.

Abstract: A copper zinc alloy that is used as a material for a sliding bearing wherein the alloy comprises 59-73% copper, 2.7-8.5% manganese, 1.5-6.3% aluminum, 0.2-4% silicon, 0.2-3% iron, 0-2% lead, 0-2% nickel, 0-0.4% tin, residual zinc and unavoidable impurities.

Abstract: The present invention relates to a brazing alloy, and particularly, to a brazing alloy comprising copper (Cu), phosphorus (P), and strontium (Sr) and further including any one element of indium (In), boron (B), silver (Ag), tin (Sn), cesium (Cs), germanium (Ge), and nickel (Ni). The present invention includes 5.0 to 7.5 wt % of phosphorus (P) and 0.1 to 5.0 wt % of strontium (Sr), in which the remainder is composed of copper (Cu). The brazing alloy according to an exemplary embodiment of the present invention comprises copper (Cu), phosphorus (P), and strontium (Sr) unlike the existing alloy element and further includes, as alloy components, one or more elements selected from a group consisting of indium (In), boron (B), silver (Ag), and tin (Sn), such that the brazing alloy includes no silver (Ag) or the silver (Ag) content is remarkably reduced compared to an existing brazing alloy containing silver (Ag).

Abstract: The present invention relates to a low lead brass alloy which ensures reduction of harmful to human health effects of lead that is useful for increasing machinability of brass raw material used in tapwares, valves and water meters, in the event of it's contact with water and which comprises less than 0.25% lead. The inventive brass alloy is an alloy which has machinability, is cost-efficient and environmentally friendly by means of its bismuth content.

Abstract: Provided are a brazing material capable of being restrained from protruding unnecessarily in a joint region; a heat dissipation base having a high reliability of electric insulation, and does not easily cause a short circuit even when the base dissipates heat repeatedly; and an electronic device wherein an electronic component is mounted on circuit members of this heat dissipation base. The brazing material comprises silver and copper as main components; at least one element A selected from indium, zinc, and tin; at least one element B selected from titanium, zirconium, hafnium, and niobium; and at least one element C selected from molybdenum, osmium, rhenium, and tungsten.

Abstract: The present invention relates to an electrode composed of an Al-M-Cu based alloy, to a process for preparing the Al-M-Cu based alloy, to an electrolytic cell comprising the electrode the use of an Al-M-Cu based alloy as an anode and to a method for extracting a reactive metal from a reactive metal-containing source using an Al-M-Cu based alloy as an anode.

Abstract: A Cu—Fe—P alloy sheet that is provided with the high strength and with the improved resistance of peel off of oxidation film, in order to deal with problems such as package cracks and peeling, is provided. A copper alloy sheet for electric and electronic parts according to the present invention is a copper alloy sheet containing Fe: 0.01 to 0.50 mass % and P: 0.01 to 0.15 mass %, respectively, with the remainder of Cu and inevitable impurities. A centerline average roughness Ra is 0.2 ?m or less and a maximum height Rmax is 1.5 ?m or less, and Kurtosis (degree peakedness) Rku of roughness curve is 5.0 or less, in measurement of the surface roughness of the copper alloy sheet in accordance with JIS B0601.

Abstract: A production method of an indium-based nanowire product comprising indium-based nanowires according to the present invention is characterized in that the method comprises the step of: disproportionation-reacting particles including indium subhalide as main components in a nonaqueous solvent, to obtain nanowires including metal indium as main components. The electroconductive oxide nanowire product comprising electroconductive oxide nanowires of the present invention can be obtained by: subjecting, the indium nanowires additionally doped with doping metals, to a heating oxidation treatment; or doping oxides of doping metals into indium oxide nanowires obtained from the indium-based nanowires.

Abstract: Sliding parts are made of Pb-free Cu-Bi based sintered material. The side in contact with a shaft is machined to a predetermined roughness. A number of Bi phases are present on the finished surface. Stable performance of Bi is to be exhibited. Machined sintered material covers a portion of the Bi phases. The ratio of the exposed surface area of the Bi phases is 0.5% or more relative to the area of the finished surface.

Abstract: A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 ?m; and an electrical conductivity is 50% IACS or more.

Abstract: A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 ?m.

Abstract: A Cu—Ga alloy includes a plurality of phases, and not less than 40 wt % and not more than 60 wt % of gallium (Ga) and a balance consisting of copper and an inevitable impurity. The plurality of phases include a segregation phase including not less than 80 wt % of gallium (Ga), and a rate of a volume of the segregation phase to a total volume of the Cu—Ga alloy is not more than 1%. The plurality of phases include particles including not less than 40 wt % and not more than 60 wt % of gallium (Ga), the particles include a diameter of not less than 0.1 ?m and not more than 30 ?m, and a rate of a volume of the particles to the total volume of the Cu—Ga alloy is not less than 90%.

Abstract: A melt-solidified substance includes melt-solidified portions formed by welding, build-up spray welding, metallizing or fusing. The melt-solidified portions have the alloy composition containing Zr: 0.0005 to 0.05 mass %, P: 0.01 to 0.34 mass %, Cu: the remainder and satisfying the relationship between the contents of P and Zr, [P]/[Zr]=0.3 to 20, and the mean grain size in the macrostructure after melt-solidification is 300 ?m or less. If Fe and/or Ni are contained in the melt-solidified portion as inevitable impurities, the content of Fe or Ni is restricted to be 0.3 mass % or less when either Fe or Ni is contained, and the total content of Fe and Ni is restricted to be 0.4 mass % or less when both Fe and Ni are contained.

Abstract: A copper alloy material consists of, by mass % Ti: 0.01-2.5%, Cr: 0.01-0.5%, Fe: 0.01% or more and less than 1%, and the balance Cu and impurities. The copper alloy possesses excellent strength, electrical conductivity, and workability without containing any environmentally harmful elements. These properties are attained by control of the total number and the diameter of precipitates and inclusions having a diameter of 1 ?m, and control of the relationship between tensile strength TS (MPa) and electrical conductivity, IACS (%). The copper alloy material is a sheet and the relationship between tensile strength and the bending workability in a bad way B90 of the copper alloy material as well as the relationship between elongation and tensile strength are also controlled with respect to each other for property improvement.

Abstract: An aluminum-bronze alloy as raw materials for Semi Solid Metal casting has a component composition containing Al of 5 to 10 mass %, Zr of 0.0005 to 0.04 mass %, and P of 0.01 to 0.25 mass %, and a balance of Cu and inevitable impurities, further containing Si of 0.5 to 3 mass % as needed, and further containing one or more kinds of Pb of 0.005 to 0.45 mass %, Bi of 0.005 to 0.45 mass %, Se of 0.03 to 0.45 mass %, and Te of 0.01 to 0.45 mass % as needed.

Abstract: This invention relates to group IB-IIIA. VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically, the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2? angle (2?(112)) of from 26° to 28° for Cu radiation at 40 kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 10° reflects an absolute shift in the 2?(112) angle of less than 0.06°.

Abstract: Provided is a copper alloy sputtering target containing 0.01 to (less than) 0.5 wt % of at least 1 element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.

Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.

Abstract: A mechanical structure is provided with a crystalline superelastic alloy that is characterized by an average grain size and that is characterized by a martensitic phase transformation resulting from a mechanical stress input greater than a characteristic first critical stress. A configuration of the superelastic alloy is provided with a geometric structural feature of the alloy that has an extent that is no greater than about 200 micrometers and that is no larger than the average grain size of the alloy. This geometric feature is configured to accept a mechanical stress input.

Abstract: A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500° C.˜850° C. being mechanical treatment, thermal annealing treatment for 0.5˜5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic % to 78 atomic % of Cu and 22 atomic % to 29 atomic % of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties.

Abstract: [Task] The adhesion resistance of Cu—Bi based or Cu—Sn—Bi based alloy is lower than that of Cu—Sn—Pb based alloy, and also since conformability of the former alloy is low. Therefore, when Bi of the former alloy adheres onto an opposite shaft, seizure of the former alloy is likely to occur as compared with the case of the latter Cu—Sn—Pb based alloy. In is alloyed in the Bi phase of the Cu—Sn—Bi—In based copper alloy. The In-alloyed Bi phase has a considerably low melting point and therefore the sliding properties deteriorate. [Means for Solving] A Pb-free copper-based sintered sliding material has a composition that 0.5 to 15.0 mass % Bi and 0.3 to 15.0 mass % In, with the balance being Cu and inevitable impurities. With regard to the existence of Cu, Bi, and In, the material consists of a Cu matrix containing In, a Bi phase, and an In concentrated region in said Cu matrix at a boundary of said Bi phase.

Abstract: Proposed is a Cu—Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities. Specifically, provided are a copper alloy wiring for semiconductor application, a sputtering target for forming this wiring, and a manufacturing method of a copper alloy wiring for semiconductor application. The copper alloy wiring itself for semiconductor application is equipped with a self-diffusion suppression function for effectively preventing the contamination around the wiring caused by the diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling and facilitating the arbitrary formation of a barrier layer, and simplifying the deposition process of the copper alloy wiring for semiconductor application.

Abstract: A seamless pipe copper alloy includes Zr and at least one of Al, Sn, and Zn, with the balance being Cu and unavoidable impurities, the Al content, the Sn content, the Zn content, and the Zr content of the copper alloy satisfying the expressions 0.05?A+B+C, 0.01?D?0.5, and 0.25?A+B+C+D?0.8 (wherein A represents the Al content (mass %), B represents the Sn content (mass %), C represents the Zn content (mass %), and D represents the Zr content (mass %)). The seamless pipe copper alloy exhibits excellent workability, high strength, and high thermal conductivity. The seamless pipe copper alloy also shows only a small decrease in strength due to brazing.

Abstract: The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.

Abstract: A QFN package is provided with a lead frame formed by processing a copper alloy sheet containing 0.01 to 0.50% by mass Fe, 0.01 to 0.20% by mass P, and Cu and inevitable impurities as other components, having a micro Vickers hardness of 150 or above, a uniform elongation of 5% or below and a local elongation of 10% or below, or a copper alloy sheet containing 0.05 to 2% by mass Ni, 0.001 to 0.3% by mass P, 0.005 to 5% by mass Zn, and Cu and inevitable impurities as other components, having a micro Vickers hardness of 150 or above, a uniform elongation of 5% or below and a local elongation of 10% or below. Lead burrs formed during the dicing of the QFN package are short, and a dicing blade used for dicing the QFN package is abraded at a low wear-out rate.

Abstract: The invention relates to a metal matrix material based on shape-memory alloy powders, to the production method thereof and to the use of same. More specifically, the invention relates to a metal matrix material which is characterised in that it is based on particles of shape-memory alloy powder, having a base of copper at a concentration of between 45 vol.-% and 70 vol.-% in relation to the total volume of the material, said powder particles being supported by a metal matrix. The invention also relates to a method of producing the aforementioned material and to the use of same for absorbing vibrations, particularly acoustic and mechanical vibrations.

Abstract: Provided is a first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.

Abstract: A Cu—Fe—P copper alloy sheet which has the high strength and the high electrical conductivity compatible with excellent bendability is provided. The Cu—Fe—P copper alloy sheet contains 0.01% to 3.0% of Fe and 0.01% to 0.3% of P on a percent by mass basis wherein the orientation density of the Brass orientation is 20 or less and the sum of the orientation densities of the Brass orientation, the S orientation, and the Copper orientation is 10 or more and 50 or less in the microstructure of the copper alloy sheet.

Abstract: The invention relates to a copper alloy which is used for mechanically stressed components which, during operation, are subjected to vibrations and/or impacts to produce the same, and have particularly good mechanical damping properties. The composition of said copper alloy depends upon the utilisation temperature or working temperature of the component. Said copper alloy consists of 2-12 wt.-% manganese, 5-14 wt.-% aluminum and individually or in total 0-18 wt.-% of one or several elements, nickel, iron, cobalt, zinc, silicon, vanadium, niobium, molybdenum, chromium, tungsten, beryllium, lithium, yttrium, cerium, scandium, calcium, titanium, phosphorous, zirconium, boron, nitrogen, carbon, whereby each element does not contain more that 6% and 100 wt.-% copper.

Abstract: To provide a Cu-based amorphous alloy having a glass-forming ability higher than that of a Cu—Zr—Ti amorphous alloy and a Cu—Hf—Ti amorphous alloy, as well as excellent workability and excellent mechanical properties without containing large amounts of Ti. A Cu-based amorphous alloy characterized by containing 90 percent by volume or more of amorphous phase having a composition represented by Formula: Cu100-a-b(Zr,Hf)a(Al,Ga)b [in Formula, a and b are on an atomic percent basis and satisfy 35 atomic percent?a?50 atomic percent and 2 atomic percent?b?10 atomic percent], wherein the temperature interval ?Tx of supercooled liquid region is 45 K or more, the temperature interval being represented by Formula ?Tx=Tx?Tg (where Tx represents a crystallization initiation temperature and Tg represents a glass transition temperature.