Abstract: An ozone processing apparatus for a semiconductor processing system includes an ozone generating unit and a reforming processing unit connected to each other through a connection piping section. The ozone generating unit includes an ozone generator and a pressure regulator connected to each other through a piping line. The connection piping section has a double-pipe structure consisting of an inner pipe and an outer pipe. The piping line and the inner pipe are made of a fluorocarbon resin. A branch line branches from the middle of the piping line, and is connected to a factory exhaust passageway. The branch line is provided with a flowmeter and an ozone densitometer. A controller is arranged to control the ozone generator with reference to the value of ozone concentration measured by the densitometer.

Abstract: A negative ion generating apparatus includes a ground electrode having a nozzle portion and surrounding a discharge electrode at a position spaced from the ground electrode, a power supply for supplying a negative high voltage to the discharge electrode, a ventilator for drawing air from an inlet and blowing the air between the electrodes. A high voltage induces corona discharges between the electrodes. The ionized negative ion particles produced in the discharge are blown out of an outlet. Alternatively, the ground electrode is a cylinder with a smaller downstream cross-section. The discharge electrode increases the velocity of gas flow and the high speed gas is ionized near the discharge electrode, increasing the rate of generation of negative ion particles. The discharge electrode may include needle electrodes to increase the rate of generation of the negative ion particles.