Abstract: There is provided trichlorosilane purification technology in which it is unnecessary to discharge large amounts of chlorosilanes oat of the system in the production of high-purity trichlorosilane from a chlorosilane fraction containing hydrocarbons and in which the reaction control can also be easily performed. In the present invention, the step of converting hydrocarbons contained in a chlorosilane fraction into low-boiling materials by thermal decomposition has been provided in the purification system in order to easily separate the hydrocarbons. Thereby, the conversion of hydrocarbons into low-boiling materials by thermal decomposition and the separation are performed in the trichlorosilane purification cycle, and it is unnecessary to discharge large amounts of chlorosilanes out of the system. As a result, the trichlorosilane production efficiency is increased, and the problem of yield reduction of polycrystalline silicon does not arise either.

Abstract: A neutral complex of a cyclic silane characterized in being represented by the general formula [Y]1[SimZ2m-aHa]. (In the formula: Y is at least one kind of coordination compound selected from a group consisting of (1) compounds represented as X1R1n. (when X1 is P, P?O or N, n=3 and each R1 represents a substituted or unsubstituted alkyl group or aryl group and R1s are the same or different; when X1 is S, S?O or O, n=2 and each R1 represents the same group as described above and R1s are the same or different; and the number of amino groups in X1R1n is 0 or 1), and (2) at least one heterocyclic compound selected from the group consisting of substituted or unsubstituted N—, O—, S —or P— containing heterocyclic compounds that have an unshared electron pair in the ring (the number of amino groups in the heterocyclic compound is 0 or 1), each Z represents a halogen atom of any of Cl, Br, I and F and Zs are the same or different, l is 1 or 2, m is 3 to 8, and a is 0 to m.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: A process that includes: (a) introducing a vent gas comprising hydrochloric acid, silicon tetrachloride, trichlorosilane, and dichlorosilane to an HCl converter reactor comprising a metal catalyst, to provide a product gas comprising less hydrochloric acid than was present in the vent gas; (b) refining the product gas to provide a hydrogen enriched stream and a chlorosilane(s) enriched stream, and (c) introducing the chlorosilane(s) enriched stream into a TCS/STC distillation unit, to generate a fraction enriched in silicon tetrachloride and another fraction enriched in trichlorosilane and dichlorosilane.

Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.

Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.

Abstract: A method of forming chloro-substituted silanes from the reaction of an alkoxysilane with a chlorinating agent in the optional presence of a catalyst is provided. More specifically, chloro-substituted silanes, including but not limited to silicon tetrachloride, are formed by reacting a chlorinating agent, such as thionyl chloride, with an alkylalkoxysilane having the formula (R?O)4-xSiRx, where R and R? are independently selected alkyl groups comprising one or more carbon atoms and x is 0, 1, 2, or 3. The catalyst may be dimethylformamide, (chloromethylene)dimethyliminium chloride, or triethylamine, among others. The chloro-substituted silane formed in the reaction along with several by-products has the formula (R?O)4-x-ySiRxCly; where x is 0, 1, 2, or 3 and y is 1, 2, 3, or 4. One of the by-products of the reaction is an alkyl chloride.

Abstract: An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.

Abstract: [Problem] Chloropolysilane having a low metallic impurity concentration has been required to be obtained in order to be used for semiconductor applications. However, it is difficult by distillation to remove impurities such as a titanium compound having a vapor pressure close to that of chloropolysilane and an aluminum compound having a sublimating property. Meanwhile, when the content of metallic impurities such as aluminum and titanium reduces in metallic silicon that is a raw material, chlorination reaction is less likely to occur unless a reaction temperature is raised and that causes equipment to be restricted.

Abstract: Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.

Abstract: A method produces tetrahalosilanes (SiX4) (X=halogen, more particularly Cl, F) from processed rock masses including high-viscosity hydrocarbons and SiO2 and/or silicates, or from the residue masses obtained in the course of such processing. The masses may be heated in a stream of hydrogen halide, and the (SiX4) which forms in the course of this heating is captured or distilled off. The masses may be admixed with hydrofluoric acid (HF) and/or alkali metal fluoride or alkaline earth metal fluoride and with sulfuric acid, and the (SiX4) which forms in the course of the admixing is captured or distilled off.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).

Abstract: Waste streams from different chloromonosilane production processes are combined and reacted in a single recovery process. Useful monosilane species may be obtained with a single recovery process.

Abstract: A process for the synthesis of a high purity corrosive gas generated by decomposition of a precursor solid at high temperature deploys a dry vacuum pump and a compressor in series so that the corrosive gas is pressured as it fills storage containers.

Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

Abstract: Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.

Abstract: A multi-stage fluidized bed synthesizer and process for synthesizing trichlorosilane wherein silicon particles can be fed into one of multiple intercommunicating fluidizing zones in a fluidized bed reactor supplied with fluidizing gas comprising hydrogen chloride. The fluidizing zones can be disposed laterally adjacent one to another, for example side-by-side, or in a horizontal line. Useful embodiments include: feeding the fluidizing gas at different rates and/or compositions to the different fluidizing zones; filtration apparatus to filter the gaseous product and return silicon particles to the reactor and cooling systems for cooling the fluidized bed and the gas volumes above the fluidized beds, if present.

Abstract: A process for treating a zirconia-based material comprises reacting, in a reaction step, the zirconia-based material with ammonium bifluoride, NH4F.HF. An ammonium fluorozirconic compound is produced.

Abstract: The invention relates to a process for preparing chlorosilanes of the general formula H4-nSiCln with n=1, 2, 3, and/or 4, the process being characterized in that silicon in a silicon bed is reacted with Cl2 or HCl and with at least one silicon-containing compound in a reactor.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: The invention relates to a process for the catalytic hydrodehalogenation of SiCl4 to form HSiCl3, which comprises bringing a gaseous feed mixture comprising hydrogen and silicon tetrachloride into direct contact with at least one heating element of a resistance heating device, with the heating element being composed of a metal or a metal alloy and being heated to carry out the reaction.

Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.

Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.

Abstract: Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile.

Abstract: Provided is a method for producing silicon chloride from silicon sludge by separating and recovering silicon carbide from waste silicon sludge generated during a semiconductor manufacturing process. With the method for producing silicon chloride from silicon sludge according to the present invention, oil components, iron, silicon that are contained in the silicon sludge may be removed, and silicon carbide may be selectively separated, thereby making it possible to produce high purity silicon chloride that may be used as a raw material for producing silica, silicon, or the like.

Abstract: Trichlorosilane production is increased while simultaneously lowering environmental burden due to destruction and disposition of high boilers by feeding high boilers from trichlorosilane production or from polycrystalline silicon production into a fluidized bed for production of trichlorosilane from metallic silicon and hydrogen chloride.

Abstract: A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port.

Abstract: Ultra high purity hexachlorodisilane is prepared from hexachlorodisilane-containing mixtures from numerous sources by distillation wherein water is present at less than 10 ppbw.

Abstract: Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si— (SiR2—)xSiR3 (2), where R is selected from Cl, Br, and I, and x is a non-negative whole number up to 5, are converted in the presence of catalytically active compounds (K), wherein the separating of the tetrahalogen silane formed thereby takes place by distilling out in the presence of a compound (L) that is liquid at room temperature having a higher boiling point than the released tetrahalogen silane.

Abstract: An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted.

Abstract: A method is provided for producing GeCl4 with or without SiCl4 from optical fibers, the method comprises the steps of: reacting comminuted optical fibers including germanium and optionally silicon oxides with a reagent including a solid carbonaceous reducing agent, chlorine and a boron compound to obtain a gaseous product including gaseous GeCl4, gaseous SiCl4, and gaseous BCl3 in accordance with the reactions: 2BCl3(g)+1.5GeO2=1.5GeCl4(g)+B2O3; 2BCl3(g)+1.5SiO2=1.5SiCl4(g)+B2O; B2O3+1.5C+3Cl2=2BCl3(g)+1.5CO2; and then condensing the gaseous GeCl4, BCl3 and optionally SiCl4 into liquid GeCl4, BCl3 and optionally SiCl4. The invention further provides a method for producing SiCl4 (and optionally GeCl4) from glassy residues obtained from optical fiber manufacturing and wasted optical cables.

Abstract: Solid materials capable of producing toxic and/or corrosive gases by thermal decomposition are heated in a stirred in a sealable crucible. The stirring rod is supported on a downward extending shaft using a combination of a lip seal or other mechanical seal and a ferro-fluidic seal or rotary feed through. The lip seal region is evacuated to reduce the chance that the small upward flow of corrosive gas will detrimentally react with components of the ferro-fluid. In a process for calcining sodium fluorosilicate to product silicon tetra-fluoride gas, the lip seal and ferro-fluidic seal regions are purged and/or blanked to prevent the absorption of water during an initial drying phase. A preferred embodiment of the process of synthesis of a high purity corrosive gas generated by decomposition of a precursor solid at high temperature deploys a dry vacuum pump and a compressor in series so that the corrosive gas is pressurized as it fills storage containers.

Abstract: Methods are disclosed for making crosslinked polysilanes and polygermanes, preferably having either hydrogen or halogen substituent groups. These crosslinked polymers are prepared by catalytic polymerization such as the dehalogenative coupling or dehydrocoupling. The crosslinked polymers having no more than 10% of the chain atoms involved in crosslinking. Also disclosed are compositions containing these crosslinked polymers in a solvent to enable the composition to be deposited on a substrate using a liquid deposition technique.

Abstract: A process for hydrogenating halogenated silanes or halogenated germanes. The process comprises hydrogenating a Lewis acid-base pair with addition of H2, hydrogenating halogenated silanes or halogenated germanes with an H?-containing Lewis acid-base pair, and regenerating the Lewis acid-base pair and releasing hydrogen halide.

Abstract: A crystalline solid designated IZM-3 is described which has the X ray diffraction diagram given below. Said solid has a chemical composition expressed as the anhydrous base in terms of moles of oxides by the formula aSiO2: bYO2: cR: dF, in which Y represents at least one tetravalent element other than silicon, R represents at least one organic nitrogen-containing species, particularly 1,5-bis(methylpiperidinium)pentane, and F is fluorine, a, b, c and d respectively representing the number of moles of SiO2, YO2, R and F and a is in the range 0.1 to 1, b is in the range 0 to 0.9, c is in the range 0.01 to 0.5 and d is in the range 0 to 0.5.

Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.

Abstract: A complex fluoride A2MF6 wherein M is a tetravalent element Si, Ti, Zr, Hf, Ge or Sn, A is an alkali metal Li, Na, K, Rb or Cs is prepared by providing a first solution containing a fluoride of M, providing a second solution containing a compound of A and/or the compound of A in solid form, mixing the first solution with the second solution and/or the solid for reacting the fluoride of M with the compound of A, and recovering the resulting solid product via solid-liquid separation.

Abstract: This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane.

Abstract: A process for removing hydrogen halide and water from hydrolyzates obtained by way of halogen-acid hydrolysis from vegetable biomasses. Two containers are connected to each other via a tube. Two flows are fed in at the inlet of the first container, one representing the hydrolyzates and the other a heat transfer medium; both flows are sprayed together in the first container, producing a homogeneous mixing of the two flows, including heat transfer, which subsequently results in complete evaporation of water and the hydrogen halide dissolved in the hydrolyzates. The evaporation produces a mixture of granular solid bodies and heat transfer medium droplets that is pulled from the first container into the second container through the connecting tube via a pressure gradient. The second container is configured as a cyclone or centrifugal force precipitator, and there is a separation of liquid and solid constituents from the gas.

Abstract: An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.

Abstract: A process for the synthesis of a high purity corrosive gas generated by decomposition of a precursor solid at high temperature deploys a dry vacuum pump and a compressor in series so that the corrosive gas is pressured as it fills storage containers.

Abstract: The invention relates to a method for removing titanium compounds from hexachlorodisilane, wherein hexachlorodisilane is treated with an organic compound (V) which contains the structural units ?C—S— or ?C—O—.

Abstract: High yields of trichlorosilane are achieved in the reaction of tetrachlorosilane and hydrogen at a temperature in the range of 900° C. to 1300° C. and a pressure above the critical pressure of the reactants.

Abstract: The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

Abstract: A process of producing silicon tetrafluoride from fluoride containing feedstocks. The process calcines the fluoride containing feedstock and a silica containing feedstock before reacting the mixture with sulfuric acid to produce silicon tetrafluoride. The silicon tetrafluoride is scrubbed with sulfuric acid. Excess sulfuric acid is recycled to the process. The process demonstrates an economic and environmentally friendly way to produce high quality silicon tetrafluoride.

Abstract: Provided is a plant for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane, wherein the plant contains: a countercurrent reactor having a double wall, a catalyst bed containing a catalyst which is located in the countercurrent reactor, a condenser at the top of the countercurrent reactor, a vaporizer unit at the bottom of the countercurrent reactor, a trichlorosilane feed line for the introduction of trichlorosilane into the countercurrent reactor, a heat exchanger, with the trichlorosilane conveyed by line via the heat exchanger and preheated there by a bottom product from the vaporizer unit and, for this purpose, the bottom product is fed by line via the heat exchanger into the double wall at a level in the lower part of the countercurrent reactor and discharged from the double wall at a level in the upper part of the countercurrent reactor, a condensation unit downstream of the condenser, and a distillation column having an outlet for monosilane.

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.