Halogenated Silane Patents (Class 423/342)
  • Patent number: 10814386
    Abstract: The present invention relates to a method and an apparatus for coating large area solid substrates with metal based alloys or compounds by contacting the substrate surface with an unoxidised metal powders formed by in situ reaction of a metal halide and a reducing agent. The method is suitable for coating large area substrates such as flakes, powder, beads, and fibres with metal based alloys or compounds starting from low-cost chemicals such as metal chlorides. The method is particularly suited for production of substrates coated with metals, alloys and compounds based on Zn, Sn, Ag, Co, V, Ni, Cr, Fe, Cu, Pt, Pd, Ta, Nb, Rh, Ru, Mo, Os, Re and W.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: October 27, 2020
    Assignee: D-Block Coating PTY LTD
    Inventor: Jawad Haidar
  • Patent number: 10696613
    Abstract: Disclosed are processes for the dechlorination of haloethanes comprising reacting in the gaseous phase a haloethane and reducing agent such as an alkene, an alkane, hydrogen or combinations of two or more of these, in the presence of a silicon-based catalyst.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: June 30, 2020
    Assignee: HONEYWELL INTERNATIONAL INC.
    Inventors: Haridasan K. Nair, Rajiv Ratna Singh, Mark Makar
  • Patent number: 10475646
    Abstract: The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: November 12, 2019
    Assignee: OCI COMPANY LTD.
    Inventors: Chang Ryol Kim, A Youn Cho, Ja Cheol Koo, Yong Chul Shin
  • Patent number: 10457559
    Abstract: The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct Si—Si bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiCl3 are purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.
    Type: Grant
    Filed: September 7, 2015
    Date of Patent: October 29, 2019
    Assignee: PSC POLYSILANE CHEMICALS GMBH
    Inventors: Christian Bauch, Sven Holl, Matthias Heuer
  • Patent number: 10343115
    Abstract: A method for removing noxious, hazardous, toxic, mutagenic, and/or carcinogenic compounds and/or precursor compounds from a comingled gas, liquid, and/or solid stream is described. In one embodiment, the method is used to prepare the stream for feeding to an oxidizer, such as a thermal oxidizer, to reduce the amount of particulate matter discharged by the oxidizer and includes passing the stream through an ambient or chilled temperature condenser followed by an optional gas/solid separator, and one or more gas scrubbers prior to feeding to the oxidizer.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: July 9, 2019
    Inventors: Stephen R. Temple, Howard Everett Whitney, Bjorn Temple
  • Patent number: 10226757
    Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.
    Type: Grant
    Filed: January 19, 2015
    Date of Patent: March 12, 2019
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Won Choon Choi, Yong Ki Park, Woo Hyung Lee, Hwi Min Seo, Na Young Kang, Joo Hee Han, Dong Ho Lee, Gui Ryong Ahn, Gil Ho Kim
  • Patent number: 10016724
    Abstract: The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.
    Type: Grant
    Filed: January 19, 2015
    Date of Patent: July 10, 2018
    Assignee: HANWHA CHEMICAL CORPORATION
    Inventors: Sang ah Kim, Jea Sung Park, Won Ik Lee, Gil Ho Kim, Bo Kyung Kim, Gui Ryong Ahn
  • Patent number: 9994455
    Abstract: A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: June 12, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Wataru Saiki, Kazuki Mizushima, Makoto Urushihara
  • Patent number: 9988714
    Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: June 5, 2018
    Assignee: WACKER CHEM IE AG
    Inventors: Walter Haeckl, Barbara Mueller, Robert Ring
  • Patent number: 9975103
    Abstract: The invention relates to a process for preparing polysilanes by converting monosilane in the presence of hydrogen in a plasma, and to a plant for performing the process.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: May 22, 2018
    Assignee: Evonik Degussa GmbH
    Inventors: Juergen Erwin Lang, Hartwig Rauleder, Ekkehard Mueh
  • Patent number: 9840421
    Abstract: When a disproportionated chlorosilane is to be produced by causing a starting material chlorosilane liquid to flow through a catalyst-packed layer which is packed with a weakly basic anion exchange resin as a disproportionation reaction catalyst to carry out a disproportionation reaction, before the disproportionation reaction is carried out, the disproportionation reaction catalyst is brought into contact with a processing gas obtained by diluting a chlorosilane with an inert gas to prevent the deterioration of the disproportionation reaction catalyst at the start of the reaction so as to carry out the disproportionation of the chlorosilane efficiently.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: December 12, 2017
    Assignee: TOKUYAMA CORPORATION
    Inventors: Shouji Iiyama, Tomohiro Yamamoto, Yukihiro Takata, Shinichirou Koyanagi, Kanji Sakata
  • Patent number: 9796594
    Abstract: The invention relates to an improved process to manufacture TCS in a polysilicon plant based upon combining a high temperature FBR process reacting metallurgical grade silicon, hydrogen, and silicon tetrachloride (STC) to make trichlorosilane (TCS) and a high temperature thermal converter to hydrogenate STC to TCS and hydrogen chloride.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: October 24, 2017
    Assignee: Summit Process Design, Inc.
    Inventors: Sumeet Dharampal Gandhi, Bruce Hazeltine
  • Patent number: 9701795
    Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: July 11, 2017
    Assignee: Nagarjuna Fertilizers and Chemicals Limited.
    Inventors: Norbert Auner, Christian Bauch, Gerd Lippold, Rumen Deltschew, Seyed-Javad Mohsseni-Ala
  • Patent number: 9650255
    Abstract: The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: May 16, 2017
    Assignee: Wacker Chemie AG
    Inventors: Andreas Hirschmann, Walter Haeckl, Uwe Paetzold
  • Patent number: 9643851
    Abstract: The present invention relates to a method for producing trichlorosilane. The method includes dispersing metal silicon particles in liquid silane-based compounds containing tetrachlorosilane and optionally reacting the metal silicon particles with hydrogen chloride in the presence of hydrogen gas.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: May 9, 2017
    Assignee: LG CHEM, LTD.
    Inventors: YooSeok Kim, JeongKyu Kim, JinHyoung Yoo, JungWoo Lee, Eunsu Jang
  • Patent number: 9493360
    Abstract: A catalytic process for converting silicon tetrachloride (STC) into trichlorosilane (TCS) utilizes a metal catalyst such as metal silicide at a low temperature such as 500 C, where the STC is reacted with hydrogen gas in the presence of catalyst and under non-thermal equilibrium conditions, to provide for a product gas stream that includes TCS at levels exceeding those obtained at thermal equilibrium, as well as optionally including HCl and unreacted STC.
    Type: Grant
    Filed: November 10, 2012
    Date of Patent: November 15, 2016
    Assignee: SiTec GmbH
    Inventor: Mark William Dassel
  • Patent number: 9481580
    Abstract: The invention relates to a process for preparing monomeric and/or dimeric halogen- and/or hydrogen-containing silicon compounds from oligomeric inorganic silanes having three or more directly covalently interconnected silicon atoms substituted by substituents selected from halogen, hydrogen and/or oxygen by reacting the oligomeric silane over a nitrogen-containing catalyst in the presence of hydrogen halide.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: November 1, 2016
    Assignee: Evonik Degussa GmbH
    Inventors: Ekkehard Mueh, Hartwig Rauleder
  • Patent number: 9480959
    Abstract: A process for hydrogenating chlorosilanes in a reactor, wherein at least two reactant gas streams are introduced separately from one another into a reaction zone, wherein the first reactant gas stream comprising silicon tetrachloride is conducted via a first heat exchanger unit in which it is heated and is then conducted through a heating unit which heats it to a first temperature before the first reactant gas stream reaches the reaction zone, and wherein the second reactant gas stream comprising hydrogen is heated by a second heat exchanger unit to a second temperature, wherein the first temperature is greater than the second temperature, and then introduced into the reaction zone, such that the mixing temperature of the two reactant gas streams in the reaction zone is between 850° C. and 1300° C.
    Type: Grant
    Filed: January 16, 2012
    Date of Patent: November 1, 2016
    Assignee: Wacker Chemie AG
    Inventors: Robert Ring, Noemi Banos, Uwe Paetzold
  • Patent number: 9463982
    Abstract: Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: October 11, 2016
    Assignee: REC Silicon Inc
    Inventors: Stein Julsrud, Anja Olafsen Sjastad
  • Patent number: 9388051
    Abstract: The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: July 12, 2016
    Assignee: ELKEM AS
    Inventors: Jan-Otto Hoel, Henning Kjenli, Harry Morten Rong, Torbjorn Roe, Jostein Bjordal
  • Patent number: 9352971
    Abstract: Silane and hydrohalosilanes of the general formula HySiX4-y (y=1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: May 31, 2016
    Assignee: REC Silicon Inc
    Inventor: William C. Breneman
  • Patent number: 9321653
    Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride. [Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: April 26, 2016
    Assignee: TOKUYAMA CORPORATION
    Inventors: Ayao Akiyoshi, Tadashi Aimoto
  • Patent number: 9278865
    Abstract: A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: March 8, 2016
    Assignee: Spawnt Private S.à.r.l.
    Inventors: Norbert Auner, Christian Bauch, Sven Holl, Rumen Deltschew, Javad Mohsseni, Gerd Lippold, Thoralf Gebel
  • Patent number: 9221689
    Abstract: The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: December 29, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Ekkehard Mueh, Hartwig Rauleder, Juergen Erwin Lang, Reinhold Schork
  • Patent number: 9212421
    Abstract: A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa at 650° C.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: December 15, 2015
    Assignee: REC Silicon Inc
    Inventors: Matthew J. Miller, Michael V. Spangler
  • Patent number: 9126838
    Abstract: The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: September 8, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masayuki Hasegawa, Yoichi Tonomura, Tohru Kubota, Takeshi Aoyama, Shuji Tanaka
  • Patent number: 9085465
    Abstract: A chlorination reaction can be carried out at a relatively low temperature by heating a mixture of granular metallic silicon and metallic copper or a copper compound in an inert atmosphere even when the metallic silicon has a high purity and does not contain aluminum and titanium and that chloropolysilane of high purity can be obtained by further adding metallic silicon as needed after the chlorination reaction is started.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: July 21, 2015
    Assignee: TOAGOSEI CO. LTD.
    Inventors: Kouji Ishikawa, Kanemasa Takashima, Hiromu Taguchi
  • Patent number: 9067338
    Abstract: A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: June 30, 2015
    Assignee: SEMLUX TECHNOLOGIES, INC.
    Inventors: Alleppey V. Hariharan, Jagannathan Ravi
  • Patent number: 9040009
    Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.
    Type: Grant
    Filed: December 6, 2010
    Date of Patent: May 26, 2015
    Assignee: Spawnt Private S.à.r.1.
    Inventors: Norbert Auner, Christian Bauch, Sven Holl, Rumen Deltschew, Javad Mohsseni, Gerd Lippold, Thoralf Gebel
  • Patent number: 9023297
    Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: May 5, 2015
    Assignee: Schmid Silicon Technology GmbH
    Inventors: Adolf Petrik, Christian Schmid, Jochem Hahn
  • Patent number: 8980191
    Abstract: An apparatus 1 for manufacturing trichlorosilane includes a decomposition furnace 2 into which polymers and hydrogen chloride are introduced, the decomposition furnace 2 includes: a heating device 11 which heats an interior of the decomposition furnace 2; a reaction chamber 4 which is formed in the decomposition furnace; a center tube 3 which is inserted in the reaction chamber 4 along a longitudinal direction of the reaction chamber and has a lower-end opening portion 3a; raw-material-supply pipes 5 and 6 which supplies the polymer and the hydrogen chloride to the reaction chamber 4 at an exterior of the center tube 3; and a gas-discharge pipe 7 which leads out reacted gas from the center tube 3, the apparatus 1 further includes a fin 14 that leads the polymer and the hydrogen chloride to the lower-end opening portion 3a of the center tube 3 so as to stir the polymer and the hydrogen chloride.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: March 17, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventors: Toshiyuki Ishii, Eiji Komai, Harumi Satoh
  • Patent number: 8974760
    Abstract: There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: March 10, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventor: Chikara Inaba
  • Patent number: 8956584
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: February 17, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Publication number: 20150034500
    Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.
    Type: Application
    Filed: August 4, 2014
    Publication date: February 5, 2015
    Inventors: Han Sung KIM, Mitchell Hugh WESTON, Patrick FULLER, Paul Wai-Man SIU
  • Publication number: 20150030520
    Abstract: A process that includes combining hydrogen chloride, metallurgical grade silicon and a third gas, e.g., tetrachlorosilane, in a reactor, under reaction conditions that include a temperature of 250-400 C. and a pressure of 2-33 barg, for a time sufficient to convert metallurgical grade silicon to an exit gas that includes trichlorosilane.
    Type: Application
    Filed: March 13, 2013
    Publication date: January 29, 2015
    Applicant: CENTROTHERM PHOTOVOLTAICS USA, INC.
    Inventor: Mark William Dassel
  • Patent number: 8920761
    Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: December 30, 2014
    Assignee: Elkem Solar AS
    Inventor: Khalil Zeaiter
  • Patent number: 8900491
    Abstract: A flame retardant filler having brominated silica particles, for example, imparts flame retardancy to manufactured articles such as printed circuit boards (PCBs), connectors, and other articles of manufacture that employ thermosetting plastics or thermoplastics. In this example, brominated silica particles serve both as a filler for rheology control (viscosity, flow, etc.) and a flame retardant. In an exemplary application, a PCB laminate stack-up includes conductive planes separated from each other by a dielectric material that includes a flame retardant filler comprised of brominated silica particles. In an exemplary method of synthesizing the brominated silica particles, a monomer having a brominated aromatic functional group is reacted with functionalized silica particles (e.g., isocyanate, vinyl, amine, or epoxy functionalized silica particles).
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: December 2, 2014
    Assignee: International Business Machines Corporation
    Inventors: Dylan J. Boday, Joseph Kuczynski, Robert E. Meyer, III
  • Publication number: 20140335007
    Abstract: A method of preparing a trihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst comprises a metal selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, and platinum; and (ii) contacting the silicon-containing copper catalyst with a hydrogen halide at a temperature of from 100 to 600° C. to form a trihalosilane.
    Type: Application
    Filed: May 14, 2014
    Publication date: November 13, 2014
    Inventors: Dimitris Katsoulis, Robert Larsen, Matthew McLaughlin, Wendy Sparschu
  • Patent number: 8883111
    Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: November 11, 2014
    Assignee: Wacker Chemie AG
    Inventors: Wolfgang Knies, Hans Eiblmeier
  • Publication number: 20140322121
    Abstract: A catalytic process for converting silicon tetrachloride (STC) into trichlorosilane (TCS) utilizes a metal catalyst such as metal silicide at a low temperature such as 500C, where the STC is reacted with hydrogen gas in the presence of catalyst and under non-thermal equilibrium conditions, to provide for a product gas stream that includes TCS at levels exceeding those obtained at thermal equilibrium, as well as optionally including HCl and unreacted STC.
    Type: Application
    Filed: November 10, 2012
    Publication date: October 30, 2014
    Inventor: Mark William Dassel
  • Publication number: 20140314655
    Abstract: Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron suicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.
    Type: Application
    Filed: April 2, 2014
    Publication date: October 23, 2014
    Applicant: REC Silicon Inc
    Inventors: Stein Julsrud, Anja Olafsen Sjastad
  • Patent number: 8852545
    Abstract: Waste streams from different chloromonosilane production processes are combined and reacted in a single recovery process. Useful monosilane species may be obtained with a single recovery process.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: October 7, 2014
    Assignee: Dow Corning Corporation
    Inventors: Jonathan Ashley Brinson, William Patrick Brady
  • Publication number: 20140286848
    Abstract: The invention relates to a process for producing hydrogen-containing chlorosilanes by reducing Si-based deposits of solid material during the operation of a pressurised reactor comprising one or more reaction spaces, wherein at least one organochlorosilane is reacted with hydrogen in at least one of these reaction spaces for at least some of the time, characterized in that at least one of the optionally two or more reaction spaces in which this reaction takes place is supplied with additional HCl for at least some of the time. The additional HCl is preferably produced by hydrodehalogenation of silicon tetrachloride with hydrogen in at least one of the optionally two or more reaction spaces of the reactor.
    Type: Application
    Filed: January 27, 2012
    Publication date: September 25, 2014
    Applicant: Evonik Degussa GmbH
    Inventors: Yücel Önal, Guido Stochniol, Jörg Sauer, Ingo Pauli, Norbert Schladerbeck
  • Patent number: 8840860
    Abstract: A process for the synthesis of a high purity corrosive gas generated by decomposition of a precursor solid at high temperature deploys a dry vacuum pump and a compressor in series so that the corrosive gas is pressured as it fills storage containers.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: September 23, 2014
    Assignee: Meyer Intellectual Properties Limited
    Inventor: Matthew Sakae Forkin
  • Patent number: 8828345
    Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventor: Mitsutoshi Narukawa
  • Publication number: 20140234197
    Abstract: Disclosed is a method for producing chloropolysilane by which the yield of a fluid reaction to produce the chloropolysilane is improved while blockage in a reactor caused by attachment of higher-order silicon chloride as a by-product is prevented. In producing the chloropolysilane by reacting fluidized silicon particles or silicon alloy particles with a chlorine gas, an outlet filter is provided, upstream from a product outlet that releases a reaction product, above the area in which the silicon particles or silicon alloy particles are fluidized inside a reaction tank. The outlet filter prevents fine particles blown up by fluidization from flowing out of the reaction tank through the product outlet. A temperature of the outlet filter is set in a range of 210 to 350° C.
    Type: Application
    Filed: July 26, 2012
    Publication date: August 21, 2014
    Applicant: TOAGOSEI CO., LTD.
    Inventors: Masatoshi Morita, Tatsuya Kanie, Hiromu Taguchi, Kanemasa Takashima
  • Patent number: 8802046
    Abstract: Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: August 12, 2014
    Assignee: Wacker Chemie AG
    Inventors: Dirk Weckesser, Rainer Hauswirth
  • Publication number: 20140212352
    Abstract: The invention relates to a process for producing a product gas mixture containing hydrogen-containing chlorosilanes within an integrated process by hydrogenating integrated process by-product silicon tetrachloride and organochlorosilane, more particularly methyltrichlorosilane, with hydrogen in a pressurized hydrogenation reactor comprising one or more reaction spaces each consisting of a reactor tube of gastight ceramic material, wherein the product gas mixture is worked up and at least a portion of at least one product of the product gas mixture is used as starting material for the hydrogenation or as starting material for some other process within the integrated process. The invention further relates to an integrated system useful for practising the integrated process.
    Type: Application
    Filed: January 27, 2012
    Publication date: July 31, 2014
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Yuecel Önal, Guido Stochniol, Ingo Pauli, Norbert Schladerbeck
  • Patent number: 8778292
    Abstract: A multi-stage fluidized bed synthesizer and process for synthesizing trichlorosilane wherein silicon particles can be fed into one of multiple intercommunicating fluidizing zones in a fluidized bed reactor supplied with fluidizing gas comprising hydrogen chloride. The fluidizing zones can be disposed laterally adjacent one to another, for example side-by-side, or in a horizontal line. Useful embodiments include: feeding the fluidizing gas at different rates and/or compositions to the different fluidizing zones; filtration apparatus to filter the gaseous product and return silicon particles to the reactor and cooling systems for cooling the fluidized bed and the gas volumes above the fluidized beds, if present.
    Type: Grant
    Filed: May 11, 2010
    Date of Patent: July 15, 2014
    Assignee: Procedyne Corporation
    Inventors: H. Kenneth Staffin, Thomas R. Parr
  • Publication number: 20140193321
    Abstract: The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.
    Type: Application
    Filed: March 12, 2014
    Publication date: July 10, 2014
    Applicant: Evonik Degussa GmbH
    Inventors: Juergen Erwin LANG, Hartwig RAULEDER, Ekkehard MUEH