Abstract: Silicon particles for active materials and electro-chemical cells are provided. The active materials comprising silicon particles described herein can be utilized as an electrode material for a battery. In certain embodiments, the composite material includes greater than 0% and less than about 90% by weight silicon particles, the silicon particles having an average particle size between about 10 nm and about 40 ?m, wherein the silicon particles have surface coatings comprising silicon carbide or a mixture of carbon and silicon carbide, and greater than 0% and less than about 90% by weight of one or more types of carbon phases, wherein at least one of the one or more types of carbon phases is a substantially continuous phase.

Abstract: The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.

Abstract: An improved mechanical face seal is provided which includes a pair of relatively rotatable seal rings having opposing seal faces. At least one of the seal faces and preferably the silicon carbide seal ring includes a tantalum coating over the seal face. The coating is formed such that the exposed seal face surface is formed of tantalum with a preferred thickness, and the substrate is the silicon carbide seal ring material. Between the silicon carbide substrate and exposed tantalum coating layer, an intermediate transformation layer of tantalum carbide is formed to enhance bonding of the substrate and coating layer. Preferably, the tantalum carbide layer is formed during the coating process wherein the tantalum is applied by chemical vapor deposition and the tantalum reacts with the silicon carbide to form the tantalum carbide at the interface between the tantalum coating layer and the seal ring substrate.

Abstract: A method of forming a ?-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.

Abstract: Disclosed is a method for preparing rod-like silica fine particles including carbon, the method including: a first step of preparing a mixed solvent by mixing a surfactant with alcohol, and then preparing a mixed solution by adding water, ethanol, ammonia water and a salt to the mixed solvent; a second step of forming rod-like silica fine particles by adding a silica precursor to the mixed solution; and a third step of carbonizing the rod-like silica fine particles, and through a sol-gel reaction of the silica precursor and a carbonization process thereof.

Abstract: The present invention involves the use of nanoporous carbons derived from partially or fully demetalized metal carbides in personal protection equipment for the irreversible absorption/adsorption of both broad and specific targeted gases. These materials have been specifically processed to provide enhanced effective loadings against specific harmful volatile organic compounds.

Abstract: In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture.

Abstract: A precursor formulation of a silicon carbide material that includes a ceramic material and a boron-11 compound. The ceramic material may include silicon and carbon and, optionally, oxygen, nitrogen, titanium, zirconium, aluminum, or mixtures thereof. The boron-11 compound may be a boron-11 isotope of boron oxide, boron hydride, boron hydroxide, boron carbide, boron nitride, boron trichloride, boron trifluoride, boron metal, or mixtures thereof. A material for use in a nuclear reactor component is also disclosed, as are such components, as well as a method of producing the material.

Abstract: Apparatus and methods of use thereof for the production of carbon-based and other nanostructures, as well as fuels and reformed products, are provided.

Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.

Abstract: A method of forming a ?-SiC material or coating by mixing SiO2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO2 to SiO gas and reacting a carbon material with the SiO gas at a temperature in the range of 1300 to 1600° C. resulting in a SiC material or a SiC coating on a substrate. Also disclosed is the related SiC material or coating prepared by this method.

Abstract: Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500° C. to approximately 2000° C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×102 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.

Abstract: Methods of forming one-dimensional carbide nanostructures are provided. In one embodiment, a carbide forming mixture (e.g., including a noncarbon element source, a catalyst, and a solvent) is applied to a porous plant template (e.g., cotton fibers, bamboo fibers, wood fibers, leaf fibers, straw fibers, or mixtures thereof). The porous plant template can then be dried to evaporate the solvent, and heated to a growth temperature of about 1000° C. or more (e.g., about 1050° C. to about 1300° C.) to grow the one-dimensional carbide nanostructures on the porous plant template. One-dimensional carbide nanostructures formed according to the presently disclosed methods are also provided.

Abstract: A process for converting precursor objects into a unitary ceramic object produces, for example, a ceramic, optical scan mirror that is formed from at least two pieces. An optical section has at least one optical surface and at least one attachment surface, and a support section has at least one attachment surface and preferably has a mounting area. The optical and support sections are formed as separate pieces from a precursor material, such as graphite, such that a selected support section can receive any of a plurality of optical sections having different sizes, shapes, or orientations. To form the mirror, the attachment surfaces are placed adjacent each other, and then the sections are converted simultaneously to a ceramic material, such as silicon carbide, to form a monolithic scan mirror.

Abstract: A method for preparing ordered mesoporous silicon carbide (OMSiC) nanocomposites uses an evaporation-induced self-assembly of a precursor composition that preferably includes a phenolic resin, pre-hydrolyzed tetraethyl orthosilicate, a surfactant, and butanol. The precursor mixture is dried, cross-linked and heated to form ordered mesoporous silicon carbide material having discrete domains of ordered, mesoscale pores.

Abstract: A process for providing silicon compounds from a silicon dioxide compound, preferably sand, with the following steps: a) introducing the silicon dioxide compound into a combustion zone; b) heating the combustion zone together with the silicon dioxide compound; c) conversion of silicon dioxide from the silicon dioxide compound into silicon (Si2), wherein a reducing agent is supplied in order to remove the oxygen from the silicon dioxide; d) injecting a gaseous reaction partner in order to produce the silicon compound from the silicon (Si2).

Abstract: In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

Abstract: 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

Abstract: A SiC single crystal is grown by physical vapor transport (PVT) in a graphite growth chamber, the interior of which is charged with a SiC source material and a SiC single crystal seed in spaced relation. During PVT growth of the SiC single crystal, the growth chamber further includes Ce. The SiC single crystal grows on the SiC single crystal seed in response to heating the interior of the growth chamber to a growth temperature and in the presence of a temperature gradient in the growth chamber whereupon the temperature of the SiC single crystal seed is lower than the temperature of the SiC source material. The Ce can include either Ce silicide or Ce carbide.

Abstract: This invention relates to ?-SiC foam parts with a specific surface area preferably equal to at least 5 m2/g and with at least two zones A and B with a different cellular porosity distribution, wherein the parts were made by chemical transformation of a porous precursor medium comprising at least two blocks A? and B?, each having a different cellular porosity distribution, and in that the at least two zones A and B are derived from the chemical transformation of the two blocks A? and B?. This foam, optionally after deposition of an active layer, may be used as a filter medium in cartridges designed for the purification of exhaust gases. The invention also relates to manufacturing processes for preparing such a filter medium.

Abstract: A chemical vapor deposited, ? phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract: A plurality of carbide, such as silicon carbide, tungsten carbide, etc., nanofibrils predominantly having diameters substantially less than about 100 nm and a method for making such carbide nanofibrils.

Abstract: Method for producing silicon carbide fibers by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The silicon carbide fibers are essentially devoid of whiskers have excellent resistance to oxidation and excellent response to microwave energy, and can readily be formed into a ceramic medium employing conventional ceramic technology. The fibers also may be used for plastic and metal reinforcement.

Abstract: Silicon carbide fibers are produced by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The silicon carbide fibers are essentially devoid of whiskers have excellent resistance to oxidation and excellent response to microwave energy, and can readily be formed into a ceramic medium employing conventional ceramic technology. The fibers also may be used for plastic and metal reinforcement.

Abstract: A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an alkoxysilane compound, an embodiment in which the above-mentioned alkoxysilane compound is selected from an ethoxysilane oligomer and an ethoxysilane polymer, an embodiment in which the above-mentioned mixture is obtained by adding an acid to a silicon source, then, by adding a carbon source, and other embodiments. A silicon carbide powder produced by the above-mentioned method of producing a silicon carbide powder wherein the nitrogen content is 100 ppm or less is preferable. A sintered silicon carbide obtained by sintering the above-mentioned silicon carbide powder wherein the volume resistivity is 1×100 ?·cm or more.

Abstract: Techniques to bond two or more smaller bodies or subunits to produce a unitary SiC composite structure extend the capabilities of reaction-bonded silicon carbide, for example, by making possible the fabrication of complex shapes. In a first aspect of the present invention, two or more preforms are bonded together with a binder material that imparts at least strength sufficient for handling during subsequent thermal processing. In a second aspect of the present invention, instead of providing the subunits to be bonded in the form of preforms, the subunits may be dense, SiC composite bodies, e.g., RBSC bodies. In each of the above embodiments, a preferable means for bonding two or more subunits combines aspects of adhesive and mechanical locking characteristics. One way to accomplish this objective is to incorporate a mechanical locking feature to the joining means, e.g., a “keyway” feature.

Abstract: A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alkali metal or a liquid alkaline earth metal or mixtures to react the constituents substantially submerged in the liquid metal to form ceramic particles. The liquid metal is present in excess of the stoichiometric amount necessary to convert the constituents into ceramic particles to absorb the heat of reaction to maintain the temperature of the ceramic particles below the sintering temperature. Ceramic particles made by the method are part of the invention.

Abstract: A chemical vapor deposited, &bgr; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Abstract: A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an alkoxysilane compound, an embodiment in which the above-mentioned alkoxysilane compound is selected from an ethoxysilane oligomer and an ethoxysilane polymer, an embodiment in which the above-mentioned mixture is obtained by adding an acid to a silicon source, then, by adding a carbon source, and other embodiments. A silicon carbide powder produced by the above-mentioned method of producing a silicon carbide powder wherein the nitrogen content is 100 ppm or less is preferable. A sintered silicon carbide obtained by sintering the above-mentioned silicon carbide powder wherein the volume resistivity is 1×100 &OHgr;·cm or more.

Abstract: Method for producing discontinuous silicon carbide fibers, useful as heating elements in a low-energy microwave field, from discontinuous carbonized cotton fibers employing an admixture of carbonized cotton fibers, a metal salt promoter, calcium oxalate monohydrate, and low-density silicon dioxide. The admixture, in a dry state, is introduced into a preheated oven at about 1450 to 1750 degrees C. for between about one and five hours. Silicon carbide fibers and a sheet formed from the fibers are disclosed.

Abstract: A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an alkoxysilane compound, an embodiment in which the above-mentioned alkoxysilane compound is selected from an ethoxysilane oligomer and an ethoxysilane polymer, an embodiment in which the above-mentioned mixture is obtained by adding an acid to a silicon source, then, by adding a carbon source, and other embodiments. A silicon carbide powder produced by the above-mentioned method of producing a silicon carbide powder wherein the nitrogen content is 100 ppm or less is preferable. A sintered silicon carbide obtained by sintering the above-mentioned silicon carbide powder wherein the volume resistivity is 1×100 &OHgr;·cm or more.

Abstract: A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

Abstract: A nanostructure based material is capable of accepting-and reacting with an alkali metal such as lithium. The material exhibits a reversible capacity ranging from at least approximately 900 mAh/g-1,500 mAh/g. The high capacity of the material makes it attractive for a number of applications, such as a battery electrode material.

Abstract: Silicon carbide having a resistivity of from 103 to 106 &OHgr;·cm and a powder X-ray diffraction peak intensity ratio of at least 0.005 as represented by Id1/Id2 where Id1 is the peak intensity in the vicinity of 2&thgr; being 34° and Id2 is the peak intensity in the vicinity of 2&thgr; being 36°.

Abstract: A method of producing silicon carbide (SiC) high-temperature sensor elements by mixing a quantity of finely-divided particles of carbon in a binder; shaping, the mixture; applying finely-divided particles of elemental silicon over the shaped mixture; and heating the shaped mixture in a furnace, while subjected to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder to convert the carbon to silicon carbide. The silicon particles are substantially free of dopants to produce a silicon carbide high-temperature sensor element having a high internal resistance of at least hundreds of Kilohm-cms.

Abstract: A method of making an aggregate having a carbon phase and a silicon-containing species phase is described and includes introducing a carbon black-yielding feedstock and a silicon-containing compound feedstock into different stages of a multi-stage reactor. The reactor operates at a sufficient temperature to decompose the silicon-containing compound and to form a carbon black phase from the carbon black-yielding feedstock. At least one of the feedstocks may include a diluent, such as an alcohol, water, and aqueous based solution, and mixtures thereof.

Abstract: A nanostructure based material is capable of accepting and reacting with an alkali metal such as lithium. The material exhibits a reversible capacity ranging from at least approximately 900 mAh/g-1,500 mAh/g. The high capacity of the material makes it attractive for a number of applications, such as a battery electrode material.

Abstract: The present invention is to provide a production method of silicon carbide particles of high quality without generating a sulfur compound in the carbonizing and baking processes. More concretely, a production method of silicon carbide particles comprising a step of mixing at least one kind of a silicon compound, which is liquid at ordinary temperatures, an organic compound having a functional group, which generates carbon by heating and is liquid at ordinary temperatures, and a polymerization or crosslinking catalyst, which can homogeneously dissolve with the organic compound to obtain a mixture, a step of homogeneously solidifying the mixture to obtain solid matter, and a step of heating and baking the solid matter in a non-oxidizing atmosphere, wherein the catalyst is a compound consisting of carbon atoms, hydrogen atoms and oxygen atoms, and has a carboxyl group.

Abstract: A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.

Abstract: A process utilizing a supported metal catalyst, a volatile species source, and a carbon source has been developed to produce carbide nanorods with diameters of less than about 100 nm and aspect ratios of 10 to 1000. The volatile species source, carbon source, and supported metal catalyst can be used to produce carbide nanorods in single run, batch, and continuous reactors under relatively mild conditions. The method employs a simple catalytic process involving readily available starting materials.

Abstract: An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.

Abstract: A process for producing silicon carbide fibers is provided, comprising the steps of mixing a silicon supply source powder including a mixture of silicon powder and silicon dioxide powder having a molar mixing ratio of 1:0.1 to 1:2 with activated carbon staple fibers having a length of 0.1 to 50 mm and a fiber thickness of 1 to 20 .mu.m and a specific surface area of 300 to 2000 m.sup.2 /g determined by the BET nitrogen absorption method; and heating the resultant mixture at a temperature of 1200 to 1500.degree. C. to directly convert the activated carbon staple fibers, in an atmosphere substantially free from substances reactive with carbon, silicon, silicon oxides and silicon carbide at the above mentioned temperature, to silicon carbide fibers.

Abstract: A method of making an aggregate comprising at least a carbon phase and a silicon-containing species phase is disclosed. The method involves introducing a first feedstock into a first stage of a multi-stage reactor, and introducing a second feedstock into the reactor at a location downstream of the first stage. The first and second feedstock comprise a carbon black-yielding feedstock, and at least one feedstock also comprises a silicon-containing compound. The reactor is operated at a sufficient temperature to decompose the silicon-containing compound and to pyrolize the carbon black-yielding feedstock. An additional method is disclosed which involves making an aggregate comprising a carbon phase and a silicon-containing species phase using multi-stage reactor having at least three stages for introducing a feedstock, wherein at least one of the feedstocks comprises a carbon black-yielding feedstock and wherein at least one of the feedstock comprises a silicon-containing compound.