Binary Compound (e.g., Silicide, Etc.) Patents (Class 423/344)
  • Patent number: 10829409
    Abstract: One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. The bridging of a crack from one of the film or the glass substrate into the other of the film or the glass substrate can be suppressed by inserting a nanoporous crack mitigating layer between the glass substrate and the film.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: November 10, 2020
    Assignee: Corning Incorporated
    Inventors: Heather Bossard Decker, Shandon Dee Hart, Guangli Hu, James Joseph Price, Paul Arthur Sachenik
  • Patent number: 10800660
    Abstract: A method for producing a silicon material, the method including: a step of heating CaSi2 powder in a range of 400 to 1000° C.; a step of reacting acid with the CaSi2 powder having been subjected to the step of heating CaSi2 powder in a range of 400 to 1000° C., to obtain a layered silicon compound; and a step of heating the layered silicon compound at not less than 300° C.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: October 13, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Masanori Harata, Takashi Mohri, Nobuhiro Goda, Yasuhiro Yamaguchi
  • Patent number: 10384941
    Abstract: A method utilizes easily obtained carbon as carbon source for sintering, followed by high energy ball milling process with planetary ball mill for high energy homogenous mixing of the carbon source, solvent and nano-level silicon dioxide powder, along with a high energy ball milling process repeatedly performed using different sized ball mill beads, so as to formulate a spray granulation slurry with the optimal viscosity, to complete the process of micronization of carbon source evenly encapsulated by silicon dioxide powders. The optimal ratio of C/SiO2 is 1-2.5 to produce a spherical silicon dioxide powder (40-50 ?m) evenly encapsulated by the carbon source. The powder is then subjected to a high temperature (1450?) sintering process under nitrogen gas. Lastly, the sintered silicon nitride powder is subjected to homogenizing carbon removal process in a rotational high temperature furnace to complete the fabricating process.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: August 20, 2019
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chun-Te Wu, Kuan-Ting Lai, Cheng-Hung Shih, Yang-Kuo Kuo
  • Patent number: 10347910
    Abstract: A nano silicon material having reduced amounts of oxygen (O) and chlorine (Cl) contained therein is provided. The nano silicon material contains fluorine (F) and nano-sized silicon crystallites. Generation of a layer in which oxygen (O) and chlorine (Cl) are present is suppressed due to the presence of fluorine (F), so that a decrease in the moving speed of lithium ions is suppressed. In addition, due to the presence of fluorine (F), the concentrations of oxygen (O) and chlorine (Cl) are reduced, so that reaction thereof with lithium ions is suppressed.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: July 9, 2019
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Takeshi Kondo, Yusuke Sugiyama, Nobuhiro Goda, Takashi Mohri, Hiroki Oshima, Masataka Nakanishi
  • Patent number: 10280084
    Abstract: A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: May 7, 2019
    Assignees: SPP TECHNOLOGIES CO., LTD., TAIYO NIPPON SANSO CORPORATION
    Inventors: Shoichi Murakami, Masayasu Hatashita, Hiroshi Taka, Masaya Yamawaki
  • Patent number: 9991182
    Abstract: The invention relates to the use of specific organopolysilazanes as an encapsulation material for light emitting diodes (LED). The organopolysilazane polymers act as insulating filling materials and are stable over temperature and over exposure to ambient UV radiation. The encapsulating material has good thermal stability against discoloration to yellow by aging even at high temperatures which is a key factor for the long lifetime of an LED encapsulant and the LED performance.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: June 5, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.A.R.L.
    Inventors: Ralph Grottenmüller, Rosalin Karunanandan, Fumio Kita, Helmut Lenz, Dieter Wagner
  • Patent number: 9920450
    Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: March 20, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Bum Sup Kim, Kyoung Seok Min, Dong Geun Shin, Seo Yong Ha, Jung Eun Han
  • Patent number: 9845239
    Abstract: Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: December 19, 2017
    Assignee: Intelligent Energy Limited
    Inventors: Andrew P. Wallace, John M. Melack, Michael Lefenfeld
  • Patent number: 9777366
    Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: October 3, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akinobu Kakimoto, Atsushi Endo, Takahiro Miyahara, Shigeru Nakajima, Satoshi Takagi, Kazumasa Igarashi
  • Patent number: 9709334
    Abstract: Provided is a heat treatment container for a vacuum heat treatment apparatus. The heat treatment container includes a bottom and a sidewall. An exhaust passage is defined in an upper portion of the sidewall.
    Type: Grant
    Filed: December 24, 2010
    Date of Patent: July 18, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Min Sung Kim, Kyoung Hoon Chai
  • Patent number: 9669371
    Abstract: Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: June 6, 2017
    Assignee: Intelligent Energy Limited
    Inventors: Andrew P. Wallace, John M. Melack, Michael Lefenfeld
  • Patent number: 9409782
    Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: August 9, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Jung Eun Han
  • Patent number: 9340431
    Abstract: A method of producing inorganic compound particles is provided. It includes a step of impregnating a melt liquid of second raw particles into first raw particles by heating a raw material including them at a temperature, which equals to or higher than an eutectic temperature between a region-II (solid-liquid phase range) and a region-I (solid phase range) in a phase diagram and lower than the melting temperature of the inorganic compound. The first raw particles contain an element with a melting point equals to or higher than a melting point of the inorganic compound. The second raw particles contain an element with a melting point lower than the inciting point of the inorganic compound. The method also includes a step of synthesizing inorganic compound particles by a synthetic reaction in the first raw particles between the elements contained in the first and second raw particles.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: May 17, 2016
    Assignees: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, MITSUBA CORPORATION
    Inventors: Yukihiro Isoda, Naoki Shioda
  • Patent number: 9102528
    Abstract: Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: August 11, 2015
    Assignee: Intelligent Energy Limited
    Inventors: Andrew P. Wallace, John M. Melack, Michael Lefenfeld
  • Patent number: 9085462
    Abstract: A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: July 21, 2015
    Assignee: Ube Industries, Inc.
    Inventors: Koji Shibata, Takuji Ohmaru, Takeshi Yamao, Masataka Fujinaga, Michio Honda, Takayuki Fujii
  • Patent number: 9079264
    Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: July 14, 2015
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Hiroshi Tonomura, Takeshi Kitahara, Hiroya Ishizuka, Yoshirou Kuromitsu, Yoshiyuki Nagatomo
  • Publication number: 20150147257
    Abstract: A system for preparing nanoparticles is described. The system can include a reactor for producing a nanoparticle aerosol comprising nanoparticles in a gas. The system also includes a diffusion pump that has a chamber with an inlet and an outlet. The inlet of the chamber is in fluid communication with an outlet of the reactor. The diffusion pump also includes a reservoir in fluid communication with the chamber for supporting a diffusion pump fluid and a heater for vaporizing the diffusion pump fluid in the reservoir to a vapor. In addition, the diffusion pump has a jet assembly in fluid communication with the reservoir having a nozzle for discharging the vaporized diffusion pump fluid into the chamber. The system can further include a vacuum pump in fluid communication with the outlet of the chamber. A method of preparing nanoparticles is also provided.
    Type: Application
    Filed: May 29, 2013
    Publication date: May 28, 2015
    Inventors: Jeffrey Anderson, James A. Casey, Vasgen Aram Shamamian
  • Publication number: 20150129089
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman
  • Patent number: 9023297
    Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: May 5, 2015
    Assignee: Schmid Silicon Technology GmbH
    Inventors: Adolf Petrik, Christian Schmid, Jochem Hahn
  • Patent number: 9017630
    Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: April 28, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Martin Trocha, Hartwig Rauleder, Ekkehard Mueh, Harald Stueger, Christoph Walkner
  • Publication number: 20150099116
    Abstract: A chiral structure comprises an elongate strip in a rolled configuration about a longitudinal axis, where the rolled configuration is a helical configuration comprising a non-zero helix angle. The elongate strip comprises an amorphous or a polycrystalline material. A rolled-up structure with modulated curvature comprises a sheet comprising an amorphous or polycrystalline material in a rolled configuration about a longitudinal axis, where the sheet comprises a thickness t and the rolled configuration comprises an inner diameter D. An inner diameter-to-thickness ratio D/t of the rolled-up structure is no greater than about 40.
    Type: Application
    Filed: October 8, 2014
    Publication date: April 9, 2015
    Inventors: Xiuling Li, Paul J. Froeter, Kuen J. Hsia, Wen Huang
  • Patent number: 8986643
    Abstract: The invention relates to a method of making alkali metal silicide compositions, and the compositions resulting from the method, comprising mixing an alkali metal with silicon and heating the resulting mixture to a temperature below about 475° C. The resulting compositions do not react with dry O2. Also, the invention relates to sodium silicide compositions having a powder X-ray diffraction pattern comprising at least three peaks with 2Theta angles selected from about 18.2, 28.5, 29.5, 33.7, 41.2, 47.4, and 56.2 and a solid state 23Na MAS NMR spectra peak at about 18 ppm. Moreover, the invention relates to methods of removing a volatile or flammable substance in a controlled manner. Furthermore, the alkali metal silicide compositions of the invention react with water to produce hydrogen gas.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: March 24, 2015
    Assignees: Signa Chemistry, LLC, The Board of Trustees of Michigan State University
    Inventors: Michael Lefenfeld, James L. Dye
  • Publication number: 20150079398
    Abstract: Embodiments of a layered-substrate comprising a substrate and a layer disposed thereon, wherein the layered-substrate is able to withstand fracture when assembled with a device that is dropped from a height of at least 100 cm onto a drop surface, are disclosed. The layered-substrate may exhibit a hardness of at least about 10 GPa or at least about 20 GPa. The substrate may include an amorphous substrate or a crystalline substrate. Examples of amorphous substrates include glass, which is optionally chemically strengthened. Examples of crystalline substrates include single crystal substrates (e.g. sapphire) and glass ceramics. Articles and/or devices including such layered-substrate and methods for making such devices are also disclosed.
    Type: Application
    Filed: September 10, 2014
    Publication date: March 19, 2015
    Inventors: Jaymin Amin, Alexandre Michel Mayolet, Charles Andrew Paulson, James Joseph Price, Kevin Barry Reiman
  • Patent number: 8974761
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: March 10, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Publication number: 20150056121
    Abstract: A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
    Type: Application
    Filed: March 25, 2013
    Publication date: February 26, 2015
    Applicant: Ube Industries, Ltd.
    Inventors: Koji Shibata, Takuji Ohmaru, Takeshi Yamao, Masataka Fujinaga, Michio Honda, Takayuki Fujii
  • Patent number: 8956584
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: February 17, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Publication number: 20150030932
    Abstract: A method for producing an alkali-metal-including active material by pre-doping an active material with an alkali metal ion includes: mixing the alkali metal, an organic solvent with which the alkali metal is solvated, and a ligand having an electrophilic substitution reactivity to produce an alkali metal complex; and contacting and reacting the alkali metal complex and the active material with each other to pre-dope the active material with the alkali metal ion.
    Type: Application
    Filed: July 23, 2014
    Publication date: January 29, 2015
    Inventors: Shuhei Yoshida, Daisuke Shibata
  • Patent number: 8920761
    Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: December 30, 2014
    Assignee: Elkem Solar AS
    Inventor: Khalil Zeaiter
  • Publication number: 20140376351
    Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler
  • Patent number: 8889092
    Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: November 18, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Jutta Hessing, Janette Klatt
  • Publication number: 20140335328
    Abstract: Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.
    Type: Application
    Filed: July 28, 2014
    Publication date: November 13, 2014
    Inventors: Young Jae Lee, Kyoung Jong Yoo, Jun Lee, Jin Su Kim, Jae Wan Park
  • Patent number: 8871168
    Abstract: A process for continuously producing monosilane by means of an apparatus comprising a reaction column, at least two upper condensers each with a reflux feed pipe, a bottom reboiler and an evaporation tank connected to a bottom portion of the reaction column; the process comprising: a) supplying dichlorosilane or a mixture of chlorosilanes to an upper stage of the reaction column via an upper feed injection point b) supplying a catalyst to said upper stage of the reaction column via a lower injection point c) introducing the resultant mixture from the top portion of the reaction column to the plurality of upper condensers d) separating monosilane from condensates in the upper condensers e) recycling the condensates through the reflux feed pipes to the upper stage of the reaction column f) bringing the condensates into contact with the catalyst in the reaction column.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: October 28, 2014
    Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Isao Abe, Jérôme Beauvisage, Shinji Tomita
  • Patent number: 8840861
    Abstract: A method for producing a workpiece comprising a layer of an additive-free silicon nitride includes providing a base body of the workpiece. A layer of a slip comprising a silicon powder is applied to an inside of the base body so as to obtain a coated base body. The coated base body is subjected to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: September 23, 2014
    Assignee: H. C. Starck GmbH
    Inventors: Rolf Wagner, Manuel Matussek
  • Publication number: 20140264170
    Abstract: An oxynitride phosphor powder contains ?-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (wherein x1, x2, y and z are 0<x1?3.40, 0.05?x2?0.20, 4.0?y?7.0, and 0?z?1), and firing the mixture.
    Type: Application
    Filed: October 12, 2012
    Publication date: September 18, 2014
    Inventors: Masataka Fujinaga, Takayuki Ueda, Takuma Sakai, Shinsuke Jida
  • Patent number: 8821825
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: September 2, 2014
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 8821635
    Abstract: Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: September 2, 2014
    Assignee: Arizona Board of Regents on Behalf of Arizona State University
    Inventors: John Kouvetakis, Ignatius S. T. Tsong, Changwu Hu, John Tolle
  • Patent number: 8815201
    Abstract: The present invention is directed to an in situ process for regenerating a reforming catalyst within a reactor by: (a) removing a carbon containing deposit from the reforming catalyst, (b) contacting the reforming catalyst with oxygen under catalyst rejuvenation conditions to provide a rejuvenated catalyst, (c) purging a portion of the oxygen from the rejuvenated catalyst such that residual oxygen is retained within the reactor, and (d) introducing hydrogen into the reactor at a rate to provide a reactor temperature increase in the range from 25 to 45° F.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: August 26, 2014
    Assignee: Chevron U.S.A. Inc.
    Inventor: Lawrence E. Lew
  • Patent number: 8808658
    Abstract: Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: August 19, 2014
    Assignees: California Institute of Technology, The Regents of the University of California
    Inventors: Richard B. Kaner, Sabah K. Bux, Jean-Pierre Fleurial, Marc Rodriguez
  • Publication number: 20140182511
    Abstract: A susceptor for supporting a crucible includes a body with an interior surface defining a cavity. A coating is disposed on the interior surface to provide a barrier for preventing contact between the body of the susceptor and the crucible disposed within the cavity.
    Type: Application
    Filed: December 26, 2013
    Publication date: July 3, 2014
    Inventors: Shailendra B. Rathod, Richard J. Phillips
  • Patent number: 8765091
    Abstract: This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: July 1, 2014
    Assignee: Dow Corning Corporation
    Inventors: Mark Loboda, Seung Ho Park, Victor Torres
  • Patent number: 8715604
    Abstract: A liquid mixture is prepared by using a liquid phenolic resin (PL-2818) serving as a carbon source. While an inert gas is introduced into the liquid mixture, a released gas is discharged. Then, the liquid mixture is dried in a reduced-pressure atmosphere, and thereby the nitrogen dissolved in the liquid mixture can be reduced. In this way, the amount of nitrogen content after burning can be reduced.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: May 6, 2014
    Assignee: Bridgestone Corporation
    Inventor: Mari Miyano
  • Patent number: 8715597
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: May 6, 2014
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Patent number: 8709369
    Abstract: The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: April 29, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Guido Stochniol, Thomas Quandt
  • Publication number: 20140113139
    Abstract: A method of producing inorganic compound particles is provided. It includes a step of impregnating a melt liquid of second raw particles into first raw particles by heating a raw material including them at a temperature, which equals to or higher than an eutectic temperature between a region-II (solid-liquid phase range) and a region-I (solid phase range) in a phase diagram and lower than the melting temperature of the inorganic compound. The first raw particles contain an element with a melting point equals to or higher than a melting point of the inorganic compound. The second raw particles contain an element with a melting point lower than the inciting point of the inorganic compound. The method also includes a step of synthesizing inorganic compound particles by a synthetic reaction in the first raw particles between the elements contained in the first and second raw particles.
    Type: Application
    Filed: December 27, 2013
    Publication date: April 24, 2014
    Applicants: Mitsuba Corporation, National Institute for Materials Science
    Inventors: Yukihiro Isoda, Naoki Shioda
  • Patent number: 8697023
    Abstract: A method for producing high-purity silicon nitride in two steps is described, wherein a) high-purity silicon is reacted with nitrogen in a rotary tubular furnace comprising a first temperature zone of 1,150 to 1,250° C. and at least one other temperature zone of 1,250 to 1,350° C. in the presence of a gas mixture comprising argon and hydrogen, said reaction proceeding up to a nitrogen content of 10 to 30 wt % and b) allowing the partially nitrogen-containing product from step a) to react in a chamber or settling furnace in a quiescent bed at 1,100 to 1,450° C. with a mixture of nitrogen, argon and optionally hydrogen up to the completion of nitrogen uptake. It is possible, utilizing the method according to the invention, to produce high-purity silicon nitride with a purity of >99.9 in a technically simple manner, wherein no further purification steps, such as leaching with inorganic acids, are required.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: April 15, 2014
    Assignee: Alzchem Trostberg GmbH
    Inventor: Georg Schroll
  • Patent number: 8679438
    Abstract: The invention is generally related to process for generating one or more molecules having the formula SixHy, SixDy, SixHyDz, and mixtures thereof, where x,y and z are integers ?1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula SixHy; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the SixHy (e.g.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: March 25, 2014
    Inventors: Richard M. Laine, Dean Richard Massey, Peter Young Peterson
  • Publication number: 20140065050
    Abstract: Systems, methods and compositions for the production of silicon nitride nanostructures are herein disclosed. In at least one embodiment, a carbon feedstock is preprocessed, combined with a silicon feedstock and annealed in the presence of a nitrogen containing compound to produce a silicon nitride nanostructure.
    Type: Application
    Filed: August 2, 2011
    Publication date: March 6, 2014
    Applicant: CRL Energy Limited
    Inventor: Joan Bakalar
  • Publication number: 20140061981
    Abstract: A process for manufacturing a ceramic filter includes mixing silicon, yttrium oxide-doped zirconia, magnesium-aluminum spinel, silicon nitride, a pore-forming material, and a binder to form a ceramic precursor; extruding the ceramic precursor into a generally honeycomb shaped monolithic filter precursor or into a single filter tube precursor; drying the filter precursor or filter tube precursor to form a dried ceramic precursor; heating the dried ceramic precursor to remove the binder; and sintering to form the silicon nitride ceramic filter.
    Type: Application
    Filed: September 3, 2013
    Publication date: March 6, 2014
    Applicant: KUBOTA CORPORATION
    Inventors: Hiroshi YAMAGUCHI, Hiroaki OKANO, Atsushi SUGAI
  • Patent number: 8614396
    Abstract: A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: December 24, 2013
    Assignee: Stion Corporation
    Inventors: Frederic Victor Mikulec, Bing Shen Gao, Howard W. H. Lee
  • Publication number: 20130330263
    Abstract: A catalyst according to the present invention exhibits a catalytic action to a methanol decomposition reaction or a hydrocarbon steam-reforming reaction in a short time. The present invention provides a catalyst for producing hydrogen gas, using an Ni3Si-based intermetallic compound.
    Type: Application
    Filed: March 8, 2012
    Publication date: December 12, 2013
    Applicant: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION
    Inventors: Yasuyuki Kaneno, Takayuki Takasugi