Abstract: The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3, and the first particle diameter is between 50 ?m and 350 ?m; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal sili

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

Abstract: A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.

Abstract: A flash ironmaking drop tube furnace includes a primary reaction section having a refractory, an induction coil around the refractory, insulation located between the refractory and the induction coil, and a susceptor located inside the refractory, the susceptor being formed of a material that is heated by induction when electrical current flows through the induction coil, and having at least one interior channel through which particles can pass. The furnace further includes a muffle, located below the primary reaction section; an outer shell surrounding the muffle; at least one heater located adjacent to the muffle; insulation located between the at least one heater and the outer shell; at least one particle feeder that feeds a predetermined volume of particles into the furnace above the primary reaction section; and an inlet port for injecting gas into the furnace, the inlet port being located so that the gas flows through the susceptor and muffle in parallel with the particles.

Abstract: A method of making neopentasilane, the method comprising: contacting perchloroneopentasilane with a reductive effective amount of an alkali metal aluminum hydride in an alkylaluminum compound of formula RxAlCl3-x, where R is alkyl having from at least 5 carbon atoms, x is an integer from 1 to 3, and the alkylaluminum compound has a boiling point of at least 250° C., at conditions sufficient to reduce the perchloroneopentasilane, to form a reaction product mixture comprising neopentasilane, and separating the neopentasilane from the product mixture to form a neopentasilane isolate.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: A method can produce a thermoelectric component or at least a semifinished version of the thermoelectric component. The method includes: a) providing a substantially planar substrate; b) providing a pulverulent thermoelectrically active material; c) pressing the active material to form green bodies; d) inserting green bodies into through-holes of the substrate; e) arranging the substrate with the green bodies inserted therein between two substantially planar electrodes; f) contacting face ends of the green bodies with the electrodes; g) exposing the green bodies to an electric current flowing between the electrodes; h) exposing the green bodies to a pressure force acting between the electrodes; i) sintering the green bodies to form thermolegs; and k) levelling the substrate and the thermolegs accommodated therein by bringing them closer to the electrodes while maintaining the parallelity thereof.

Abstract: Systems and methods are provided for enhancement of gaseous CLC in a fixed-bed process, marked by an increase in CO2 capture efficiency and oxygen carrier utilization, while reducing disadvantages of a conventional fixed-bed operation. The disclosed systems/methods provide a CLC fixed-bed reactor design in which the direction of the fuel gas is intermittently reversed during a single fuel oxidation step. In this reverse-flow mode, oxygen carrier reduction reactions are displaced over the ends of the reactor, which increases contact between fuel and oxidized solids and alleviates and/or mitigates problems of carbon deposition encountered by most oxygen carriers.

Abstract: A method for forming a magnetoresistive sensor. The method may include dissolving a substrate, the substrate comprising plated nanowires, wherein a dissolved substrate is formed. The method may further include forming an intermediate mixture from the dissolved substrate, and forming pre-bundled nanowires from the intermediate mixture.

Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Abstract: The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fiber.

Abstract: A coated substrate is described including a substrate material, which is coated at least in part with an oxidation-resistant coating, wherein the coating consists of a wear-resistant abrasive coating layer, which contains or consists of coated abrasive particles embedded in an oxidation-resistant matrix material, wherein at least some of the abrasive particles consist of ?-Al2O3 and the abrasive particles are coated with a first particle coating layer disposed on the abrasive particles and an optional second particle coating layer disposed on the first particle coating layer, wherein the matrix material contains or consists of the compound MCrAlY, wherein M is at least one element selected from the group consisting of Ni, Co and Fe. A method for manufacturing such a coated substrate is also disclosed.

Abstract: A method of repairing or manufacturing a superalloy component (50) by depositing a plurality of layers (22, 24, 26, 28) of additive superalloy material having a property that is different than an underlying original superalloy material (30). The property that is changed between the original material and the additive material may be material composition, grain structure, principal grain axis, grain boundary strengthener, and/or porosity, for example. A region (60) of the component formed of the additive material will exhibit an improved performance when compared to the original material, such as a greater resistance to cracking (58).

Abstract: A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

Abstract: The invention relates to a method for producing a molded body, having a silicon carbide support matrix and an integral carbon structure, wherein a base body on the basis of a powder mixture containing silicon carbide or silicon and carbon and of a binder is built in layers in a generative method, and wherein a pyrolysis of the base body is effected for realizing the molded body after the binder has been cured, wherein the carbon content of the carbon structure is adjusted by way of the pyrolysis of the binder and by way of the carbon content of the powder mixture or infiltration of a carbon material into the silicon carbide support matrix.

Abstract: The present invention relates to methods and apparatuses for forming high temperature ceramic powders. A method of producing high temperature ceramic powders according to an embodiment of the present invention can include preparing a solution, atomizing the solution, providing a gas and carrying the atomized solution into a furnace via the gas, evaporating the solvent, precipitating and drying the solutes, performing a thermolysis (or pyrolysis) reaction, and performing a carbothermal reduction reaction (CTR) in situ, and collecting product particles after they exit from the furnace.

Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Abstract: A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.

Abstract: A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

Abstract: A monolithic refractory castable material comprises from about 25 to about 80 weight percent of graphite, from about 1 to about 15 weight percent of a water dispersible, curable phenolic novolac resin, and from about 70 to about 15 weight percent of one or more refractory aggregates, based on the weight of the monolithic refractory castable material. The monolithic refractory castable material is water dispersible and may be delivered to a structure surface by casting, pumping, shotcreting or gunning processes. In one embodiment, the monolithic refractory castable material may be employed to install or replace a blast furnace lining.

Abstract: A soldering device comprising: a first treatment part that sets a component having an electrode; a second treatment part separated by an opening-closing unit, the second treatment part sending the component on to a third treatment part; the third treatment part separated by an opening-closing unit, the third treatment part causing the component to contact an organic fatty-acid-containing solution and move horizontally; a fourth treatment part having a unit for moving the component to a space portion and causing molten solder to adhere to the electrode; and a unit for removing excess molten solder; a fifth treatment part for horizontally moving the component moved downward by the fourth treatment part; a sixth treatment part separated by an opening-closing unit, the sixth treatment part sending the component on to a seventh treatment part; and the seventh treatment part separated by an opening-closing unit, the seventh treatment part taking out the component.

Abstract: A ceramic material has a characteristic length La of a micro-structure thereof that satisfies 0.1 LAMFP?La?100 LAMFP, and has thermal conductivity that monotonously increases from room temperature to 100° C., where LAMFP denotes apparent mean free path of phonons at room temperature, and is defined as LAMFP=(3×thermal conductivity)/(heat capacity×speed of sound). The characteristic length La of the micro-structure is an interval between particles of different type of material when the ceramic material includes a composite material in which the different type of material is dispersed in a base material, is an interval between one pore and another pore when the ceramic material includes a porous body, and is the crystalline particle size (interval between one grain boundary and another grain boundary) when the ceramic material includes a polycrystalline body.

Abstract: The present invention is a silicon carbide powder which is suitable for producing a high-strength silicon carbide sintered body, wherein: the molar ratio between carbon and silicon in a mixture containing a silicon source, a carbon source, and a catalyst is 2.5 or more; and the average particle diameter is 10 ?m or more and 25 ?m or less.

Abstract: The invention relates to a method for the treatment of silicon carbide fibers, comprising a step involving the chemical treatment of fibers with an aqueous acid solution containing hydrofluoric acid and nitric acid but free of acetic acid in order to remove the silica present on the surface of fibers and to form a layer of microporous carbon. The invention also relates to a method for the production of a fibrous preform, comprising the formation of a fibrous structure comprising treated silicon carbon fibers and the use of said preform for the production of a part made from composite material.

Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

Abstract: Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.

Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.

Abstract: Embodiments of the invention relate to methods of fabricating a polycrystalline diamond compacts and applications for such polycrystalline diamond compacts. In an embodiment, a method of fabricating a polycrystalline diamond compact includes at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material and sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid particles to form a polycrystalline diamond table.

Abstract: A nanofluid of a base heat transfer fluid and a plurality of ceramic nanoparticles suspended throughout the base heat transfer fluid applicable to commercial and industrial heat transfer applications. The nanofluid is stable, non-reactive and exhibits enhanced heat transfer properties relative to the base heat transfer fluid, with only minimal increases in pumping power required relative to the base heat transfer fluid. In a particular embodiment, the plurality of ceramic nanoparticles comprise silicon carbide and the base heat transfer fluid comprises water and water and ethylene glycol mixtures.

Abstract: Production of pore-free carbon/carbon-silicon carbide composite materials with mechanical properties making them suitable for use in such applications as the production of aircraft landing system brake components including brake discs. The method includes: providing a porous carbon-carbon composite preform; surrounding the porous carbon-carbon composite preform with silicon powder to form an intermediate construct; applying a uniaxial load to the construct; applying direct electrical current to an assembly containing the loaded construct of porous carbon-carbon preform surrounded by silicon powder, thereby melting the silicon powder and infiltrating the pores of the carbon-carbon preform with liquid silicon; and initiating a combustion-type reaction between the silicon and carbon in the preform, thereby forming silicon carbide in the preform.

Abstract: Various embodiments of a nuclear fuel for use in various types of nuclear reactors and/or waste disposal systems are disclosed. One exemplary embodiment of a nuclear fuel may include a fuel element having a plurality of tristructural-isotropic fuel particles embedded in a silicon carbide matrix. An exemplary method of manufacturing a nuclear fuel is also disclosed. The method may include providing a plurality of tristructural-isotropic fuel particles, mixing the plurality of tristructural-isotropic fuel particles with silicon carbide powder to form a precursor mixture, and compacting the precursor mixture at a predetermined pressure and temperature.

Abstract: This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

Abstract: This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.

Abstract: A method for producing a polysilane includes a step of reacting (i) at least two silane monomers and (ii) at least one alkali metal. The silane monomers contain the following structural units: at least one aryl group, at least one alkyl group, at least one alkenyl group, and at least three halogen atoms. At least three of the halogen atoms are bonded to a silicon atom of one of the silane monomers.

Abstract: A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.

Abstract: A LCD device comprising the liquid crystal cell and a surface modification method for an IR material are provided. The IR material is obtained via the surface modification method, and a component comprising the IR material is disposed in the liquid crystal cell. As the liquid crystal cell can emit infrared light, it is beneficial for healthy. The surface modified IR material is compatible and has optimal matching property with the structure of the liquid crystal cell, the heat exchange capacity between the IR material and the backlight as well the ambient light can be improved without compromising the performance of the LCD device, and the surface modified IR material will emit far-IR light of specific wavelength with higher emissivity.

Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A facile method to produce covalently bonded graphene-like network coated on various solid substrates is disclosed in the present invention. According to one embodiment, a combination of chemical vapor deposition (CVD) of carbon sources and a silicon compound with or without a metal containing compound under an inert gas flow is processed at high temperatures to produce covalent carbide bonding among graphene-like structures and between graphene-like structures and substrate surface.

Abstract: A method and apparatus for forming a plurality of fibers from (e.g., CVD) precursors, including a reactor adapted to grow a plurality of individual fibers; and a plurality of independently controllable lasers, each laser of the plurality of lasers growing a respective fiber. A high performance fiber (HPF) structure, including a plurality of fibers arranged in the structure; a matrix disposed between the fibers; wherein a multilayer coating is provided along the surfaces of at least some of the fibers with an inner layer region having a sheet-like strength; and an outer layer region, having a particle-like strength, such that any cracks propagating toward the outer layer from the matrix propagate along the outer layer and back into the matrix, thereby preventing the cracks from approaching the fibers.

Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.

Abstract: A method of producing alkoxysilanes and precipitated silicas from biogenic silicas is provided. In a first step, biogenically concentrated silica is mixed with a liquid polyol to obtain a mixture, and then the mixture is heated. In a second step, a base is added to obtain a reaction mixture. In a third step, the reaction mixture is filtered to remove the carbon enriched RHA or other undissolved biogenic silica and recover the solution of alkoxysilane and alcoholate. In a fourth step, alkoxysilane is purified by filtering, distilling, precipitating or extracting from the original reaction solution to precipitate various forms of silica. In a final step, residual base present in alkoxysilane is neutralized to eliminate the residual alkali metal base.

Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.

Abstract: A method of making a sandwich of impact resistant material, the method comprising: providing a powder; performing a spark plasma sintering process on powder to form a tile; and coupling a ductile backing layer to the tile. In some embodiments, the powder comprises micron-sized particles. In some embodiments, the powder comprises nano-particles. In some embodiments, the powder comprises silicon carbide particles. In some embodiments, the powder comprises boron carbide particles. In some embodiments, the ductile backing layer comprises an adhesive layer. In some embodiments, the ductile backing layer comprises: a layer of polyethylene fibers; and an adhesive layer coupling the layer of polyethylene fibers to the tile, wherein the adhesive layer comprises a thickness of 1 to 3 millimeters.

Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.

Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Abstract: A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular shape. A method for fabricating a raw material for growing an ingot according to the embodiment comprises the steps of: preparing an ultrahigh-purity powder; and granulating the ultrahigh-purity powder. A method for fabricating an ingot according to the embodiment comprises the steps of: preparing a raw material; filling the raw material in a crucible; and growing a single crystal from the raw material, wherein the raw material comprises an agglomerate raw material in which fine particles are agglomerated, and the agglomerate raw material has a granular shape.

Abstract: Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.