Of Carbon (i.e., Silicon Carbide) Patents (Class 423/345)
  • Patent number: 10670262
    Abstract: Systems and methods are provided for enhancement of gaseous CLC in a fixed-bed process, marked by an increase in CO2 capture efficiency and oxygen carrier utilization, while reducing disadvantages of a conventional fixed-bed operation. The disclosed systems/methods provide a CLC fixed-bed reactor design in which the direction of the fuel gas is intermittently reversed during a single fuel oxidation step. In this reverse-flow mode, oxygen carrier reduction reactions are displaced over the ends of the reactor, which increases contact between fuel and oxidized solids and alleviates and/or mitigates problems of carbon deposition encountered by most oxygen carriers.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: June 2, 2020
    Assignee: University of Connecticut
    Inventors: George M. Bollas, Lu Han, Brian Baillie
  • Patent number: 10634736
    Abstract: A method for forming a magnetoresistive sensor. The method may include dissolving a substrate, the substrate comprising plated nanowires, wherein a dissolved substrate is formed. The method may further include forming an intermediate mixture from the dissolved substrate, and forming pre-bundled nanowires from the intermediate mixture.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: April 28, 2020
    Assignee: Littelfuse, Inc.
    Inventors: Yuriy B. Matus, Martin G. Pineda
  • Patent number: 10435810
    Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 8, 2019
    Assignee: DOW SILICONES CORPORATION
    Inventors: Mark Loboda, Roman Drachev, Darren Hansen, Edward Sanchez
  • Patent number: 10259720
    Abstract: A coated substrate is described including a substrate material, which is coated at least in part with an oxidation-resistant coating, wherein the coating consists of a wear-resistant abrasive coating layer, which contains or consists of coated abrasive particles embedded in an oxidation-resistant matrix material, wherein at least some of the abrasive particles consist of ?-Al2O3 and the abrasive particles are coated with a first particle coating layer disposed on the abrasive particles and an optional second particle coating layer disposed on the first particle coating layer, wherein the matrix material contains or consists of the compound MCrAlY, wherein M is at least one element selected from the group consisting of Ni, Co and Fe. A method for manufacturing such a coated substrate is also disclosed.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: April 16, 2019
    Assignee: ANSALDO ENERGIA SWITZERLAND AG
    Inventors: Werner Martin Balbach, Wilhelm Ebeling, Matthias Hoebel
  • Patent number: 10260163
    Abstract: The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fiber.
    Type: Grant
    Filed: December 23, 2015
    Date of Patent: April 16, 2019
    Assignee: Universität Paderborn
    Inventor: Siegmund Greulich-Weber
  • Patent number: 10190220
    Abstract: A method of repairing or manufacturing a superalloy component (50) by depositing a plurality of layers (22, 24, 26, 28) of additive superalloy material having a property that is different than an underlying original superalloy material (30). The property that is changed between the original material and the additive material may be material composition, grain structure, principal grain axis, grain boundary strengthener, and/or porosity, for example. A region (60) of the component formed of the additive material will exhibit an improved performance when compared to the original material, such as a greater resistance to cracking (58).
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: January 29, 2019
    Assignee: Siemens Energy, Inc.
    Inventors: Ahmed Kamel, Gerald J. Bruck, Dhafer Jouini
  • Patent number: 10106912
    Abstract: A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: October 23, 2018
    Assignee: DOW SILICONES CORPORATION
    Inventor: Mark Loboda
  • Patent number: 10059631
    Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: August 28, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ta-Ching Hsiao, Wen-Po Tu, Chu-Pi Jeng, Mu-Hsi Sung
  • Patent number: 9926237
    Abstract: The invention relates to a method for producing a molded body, having a silicon carbide support matrix and an integral carbon structure, wherein a base body on the basis of a powder mixture containing silicon carbide or silicon and carbon and of a binder is built in layers in a generative method, and wherein a pyrolysis of the base body is effected for realizing the molded body after the binder has been cured, wherein the carbon content of the carbon structure is adjusted by way of the pyrolysis of the binder and by way of the carbon content of the powder mixture or infiltration of a carbon material into the silicon carbide support matrix.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: March 27, 2018
    Assignee: SCHUNK KOHLENSTOFFTECHNIK GMBH
    Inventors: Jeremias Schoenfeld, Roland Weiss, Gotthard Nauditt
  • Patent number: 9919973
    Abstract: The present invention relates to methods and apparatuses for forming high temperature ceramic powders. A method of producing high temperature ceramic powders according to an embodiment of the present invention can include preparing a solution, atomizing the solution, providing a gas and carrying the atomized solution into a furnace via the gas, evaporating the solvent, precipitating and drying the solutes, performing a thermolysis (or pyrolysis) reaction, and performing a carbothermal reduction reaction (CTR) in situ, and collecting product particles after they exit from the furnace.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: March 20, 2018
    Assignee: THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES
    Inventors: Zhe Cheng, Paniz Foroughi, Andres Behrens
  • Patent number: 9840420
    Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: December 12, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Eun Han, Dong Geun Shin, Byung Sook Kim
  • Patent number: 9802825
    Abstract: A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: October 31, 2017
    Assignee: SAINT GOBAIN CERAMIC MATERIALS AS
    Inventors: Bruno Aleonard, Simonpietro Di Pierro, Matthieu Schwartz
  • Patent number: 9738991
    Abstract: A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: August 22, 2017
    Assignee: DOW CORNING CORPORATION
    Inventor: Mark Loboda
  • Patent number: 9695088
    Abstract: A monolithic refractory castable material comprises from about 25 to about 80 weight percent of graphite, from about 1 to about 15 weight percent of a water dispersible, curable phenolic novolac resin, and from about 70 to about 15 weight percent of one or more refractory aggregates, based on the weight of the monolithic refractory castable material. The monolithic refractory castable material is water dispersible and may be delivered to a structure surface by casting, pumping, shotcreting or gunning processes. In one embodiment, the monolithic refractory castable material may be employed to install or replace a blast furnace lining.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: July 4, 2017
    Assignee: ALLIED MINERAL PRODUCTS, INC.
    Inventors: Yuechu Ma, Douglas K. Doza, Timothy M. Green, Dana G. Goski
  • Patent number: 9686871
    Abstract: A soldering device comprising: a first treatment part that sets a component having an electrode; a second treatment part separated by an opening-closing unit, the second treatment part sending the component on to a third treatment part; the third treatment part separated by an opening-closing unit, the third treatment part causing the component to contact an organic fatty-acid-containing solution and move horizontally; a fourth treatment part having a unit for moving the component to a space portion and causing molten solder to adhere to the electrode; and a unit for removing excess molten solder; a fifth treatment part for horizontally moving the component moved downward by the fourth treatment part; a sixth treatment part separated by an opening-closing unit, the sixth treatment part sending the component on to a seventh treatment part; and the seventh treatment part separated by an opening-closing unit, the seventh treatment part taking out the component.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: June 20, 2017
    Assignee: TANIGUROGUMI CORPORATION
    Inventors: Katsumori Taniguro, Genzo Watanabe
  • Patent number: 9656920
    Abstract: A ceramic material has a characteristic length La of a micro-structure thereof that satisfies 0.1 LAMFP?La?100 LAMFP, and has thermal conductivity that monotonously increases from room temperature to 100° C., where LAMFP denotes apparent mean free path of phonons at room temperature, and is defined as LAMFP=(3×thermal conductivity)/(heat capacity×speed of sound). The characteristic length La of the micro-structure is an interval between particles of different type of material when the ceramic material includes a composite material in which the different type of material is dispersed in a base material, is an interval between one pore and another pore when the ceramic material includes a porous body, and is the crystalline particle size (interval between one grain boundary and another grain boundary) when the ceramic material includes a polycrystalline body.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: May 23, 2017
    Assignee: NGK INSULATORS, LTD.
    Inventors: Takahiro Tomita, Kenkichi Nagai, Hiroharu Kobayashi
  • Patent number: 9630854
    Abstract: The present invention is a silicon carbide powder which is suitable for producing a high-strength silicon carbide sintered body, wherein: the molar ratio between carbon and silicon in a mixture containing a silicon source, a carbon source, and a catalyst is 2.5 or more; and the average particle diameter is 10 ?m or more and 25 ?m or less.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: April 25, 2017
    Assignee: BRIDGESTONE CORPORATION
    Inventor: Kazuhito Hase
  • Patent number: 9574299
    Abstract: The invention relates to a method for the treatment of silicon carbide fibers, comprising a step involving the chemical treatment of fibers with an aqueous acid solution containing hydrofluoric acid and nitric acid but free of acetic acid in order to remove the silica present on the surface of fibers and to form a layer of microporous carbon. The invention also relates to a method for the production of a fibrous preform, comprising the formation of a fibrous structure comprising treated silicon carbon fibers and the use of said preform for the production of a part made from composite material.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: February 21, 2017
    Assignee: HERAKLES
    Inventors: Sylvie Loison, Jean Luc Laquet, Jean Philippe Rocher
  • Patent number: 9487405
    Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: November 8, 2016
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Whan Park, Kyoung Sop Han, Sung Ho Yun, Jin Oh Yang, Gyoung Sun Cho, Mi Rae Youm, Yung Chul Jo
  • Patent number: 9435018
    Abstract: Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: September 6, 2016
    Assignee: TOYO TANSO CO., LTD.
    Inventors: Masanari Watanabe, Yoshihisa Abe
  • Patent number: 9399583
    Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: July 26, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Byung Sook Kim
  • Patent number: 9381620
    Abstract: Embodiments of the invention relate to methods of fabricating a polycrystalline diamond compacts and applications for such polycrystalline diamond compacts. In an embodiment, a method of fabricating a polycrystalline diamond compact includes at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material and sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid particles to form a polycrystalline diamond table.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: July 5, 2016
    Assignee: US SYNTHETIC CORPORATION
    Inventors: David P. Miess, Michael A. Vail, C. Eugene McMurray
  • Patent number: 9340720
    Abstract: A nanofluid of a base heat transfer fluid and a plurality of ceramic nanoparticles suspended throughout the base heat transfer fluid applicable to commercial and industrial heat transfer applications. The nanofluid is stable, non-reactive and exhibits enhanced heat transfer properties relative to the base heat transfer fluid, with only minimal increases in pumping power required relative to the base heat transfer fluid. In a particular embodiment, the plurality of ceramic nanoparticles comprise silicon carbide and the base heat transfer fluid comprises water and water and ethylene glycol mixtures.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: May 17, 2016
    Assignee: UChicago Argonne, LLC
    Inventors: Dileep Singh, Jules Routbort, A.J. Routbort, Wenhua Yu, Elena Timofeeva, David S. Smith, David M. France
  • Patent number: 9321692
    Abstract: Production of pore-free carbon/carbon-silicon carbide composite materials with mechanical properties making them suitable for use in such applications as the production of aircraft landing system brake components including brake discs. The method includes: providing a porous carbon-carbon composite preform; surrounding the porous carbon-carbon composite preform with silicon powder to form an intermediate construct; applying a uniaxial load to the construct; applying direct electrical current to an assembly containing the loaded construct of porous carbon-carbon preform surrounded by silicon powder, thereby melting the silicon powder and infiltrating the pores of the carbon-carbon preform with liquid silicon; and initiating a combustion-type reaction between the silicon and carbon in the preform, thereby forming silicon carbide in the preform.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: April 26, 2016
    Assignees: Honeywell International Inc., The University of Notre Dame du Lac
    Inventors: Manuel Koucouthakis, Douglas J. Steinke, Alexander Mukasyan, Jeremiah D. E. White
  • Patent number: 9299464
    Abstract: Various embodiments of a nuclear fuel for use in various types of nuclear reactors and/or waste disposal systems are disclosed. One exemplary embodiment of a nuclear fuel may include a fuel element having a plurality of tristructural-isotropic fuel particles embedded in a silicon carbide matrix. An exemplary method of manufacturing a nuclear fuel is also disclosed. The method may include providing a plurality of tristructural-isotropic fuel particles, mixing the plurality of tristructural-isotropic fuel particles with silicon carbide powder to form a precursor mixture, and compacting the precursor mixture at a predetermined pressure and temperature.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: March 29, 2016
    Assignees: UT-BATTELLE, LLC, LOGOS TECHNOLOGIES LLC
    Inventors: Francesco Venneri, Yutai Katoh, Lance Lewis Snead
  • Patent number: 9120679
    Abstract: This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: September 1, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Syed B Qadri, Arne W Fliflet, M Ashraf Imam, Bhakta B Rath, Edward P Gorzkowski, III
  • Patent number: 9051186
    Abstract: This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: June 9, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Syed B Qadri, Ame W Fliflet, M Ashraf Iman, Bhakta B Rath, Edward P Gorzkowski, III
  • Publication number: 20150129089
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman
  • Publication number: 20150122149
    Abstract: A method for producing a polysilane includes a step of reacting (i) at least two silane monomers and (ii) at least one alkali metal. The silane monomers contain the following structural units: at least one aryl group, at least one alkyl group, at least one alkenyl group, and at least three halogen atoms. At least three of the halogen atoms are bonded to a silicon atom of one of the silane monomers.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 7, 2015
    Inventors: TOBIAS LEHMANN, JOAHIM BILL, ANDREAS KIENZLE
  • Patent number: 9011811
    Abstract: A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: April 21, 2015
    Assignees: National Institute for Materials Science, Shin-Etsu Chemical Co., Ltd.
    Inventors: Hidehiko Tanaka, Yoshitaka Aoki
  • Publication number: 20150103293
    Abstract: A LCD device comprising the liquid crystal cell and a surface modification method for an IR material are provided. The IR material is obtained via the surface modification method, and a component comprising the IR material is disposed in the liquid crystal cell. As the liquid crystal cell can emit infrared light, it is beneficial for healthy. The surface modified IR material is compatible and has optimal matching property with the structure of the liquid crystal cell, the heat exchange capacity between the IR material and the backlight as well the ambient light can be improved without compromising the performance of the LCD device, and the surface modified IR material will emit far-IR light of specific wavelength with higher emissivity.
    Type: Application
    Filed: August 28, 2013
    Publication date: April 16, 2015
    Inventors: Jiuxia Yang, Feng Bai, Yiming Zhao, Xiao Sun, Bing Bai
  • Patent number: 8980445
    Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: March 17, 2015
    Assignee: Cree, Inc.
    Inventors: Robert T. Leonard, Mark Brady, Adrian Powell
  • Patent number: 8951638
    Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: February 10, 2015
    Assignees: Denki Kagaku Kogyo Kabushiki Kaisha, National Institute of Advanced Industrial Science and Technology
    Inventors: Tomohisa Katou, Yusuke Takeda, Hiroshi Murata
  • Publication number: 20150023860
    Abstract: A facile method to produce covalently bonded graphene-like network coated on various solid substrates is disclosed in the present invention. According to one embodiment, a combination of chemical vapor deposition (CVD) of carbon sources and a silicon compound with or without a metal containing compound under an inert gas flow is processed at high temperatures to produce covalent carbide bonding among graphene-like structures and between graphene-like structures and substrate surface.
    Type: Application
    Filed: July 18, 2014
    Publication date: January 22, 2015
    Inventors: LYJames Lee, Jianfeng Yu, Ying-Chieh Yen
  • Publication number: 20150004393
    Abstract: A method and apparatus for forming a plurality of fibers from (e.g., CVD) precursors, including a reactor adapted to grow a plurality of individual fibers; and a plurality of independently controllable lasers, each laser of the plurality of lasers growing a respective fiber. A high performance fiber (HPF) structure, including a plurality of fibers arranged in the structure; a matrix disposed between the fibers; wherein a multilayer coating is provided along the surfaces of at least some of the fibers with an inner layer region having a sheet-like strength; and an outer layer region, having a particle-like strength, such that any cracks propagating toward the outer layer from the matrix propagate along the outer layer and back into the matrix, thereby preventing the cracks from approaching the fibers.
    Type: Application
    Filed: January 18, 2013
    Publication date: January 1, 2015
    Inventors: Joseph Pegna, John L. Schneiter, Kirk L. Williams, Ramkiran Goduguchinta
  • Patent number: 8920761
    Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: December 30, 2014
    Assignee: Elkem Solar AS
    Inventor: Khalil Zeaiter
  • Patent number: 8916122
    Abstract: A method of producing alkoxysilanes and precipitated silicas from biogenic silicas is provided. In a first step, biogenically concentrated silica is mixed with a liquid polyol to obtain a mixture, and then the mixture is heated. In a second step, a base is added to obtain a reaction mixture. In a third step, the reaction mixture is filtered to remove the carbon enriched RHA or other undissolved biogenic silica and recover the solution of alkoxysilane and alcoholate. In a fourth step, alkoxysilane is purified by filtering, distilling, precipitating or extracting from the original reaction solution to precipitate various forms of silica. In a final step, residual base present in alkoxysilane is neutralized to eliminate the residual alkali metal base.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: December 23, 2014
    Assignee: Mayaterials, Inc.
    Inventors: Richard M. Laine, Julien C. Marchal, Vera Popova, David J. Krug
  • Publication number: 20140363675
    Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.
    Type: Application
    Filed: January 18, 2013
    Publication date: December 11, 2014
    Inventors: Byung Sook Kim, Dong Geun Shin, Bum Sup Kim, Jung Eun Han
  • Patent number: 8906498
    Abstract: A method of making a sandwich of impact resistant material, the method comprising: providing a powder; performing a spark plasma sintering process on powder to form a tile; and coupling a ductile backing layer to the tile. In some embodiments, the powder comprises micron-sized particles. In some embodiments, the powder comprises nano-particles. In some embodiments, the powder comprises silicon carbide particles. In some embodiments, the powder comprises boron carbide particles. In some embodiments, the ductile backing layer comprises an adhesive layer. In some embodiments, the ductile backing layer comprises: a layer of polyethylene fibers; and an adhesive layer coupling the layer of polyethylene fibers to the tile, wherein the adhesive layer comprises a thickness of 1 to 3 millimeters.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 9, 2014
    Assignee: SDCmaterials, Inc.
    Inventor: Maximilian A. Biberger
  • Publication number: 20140356626
    Abstract: A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.
    Type: Application
    Filed: December 28, 2012
    Publication date: December 4, 2014
    Inventor: Byung Sook Kim
  • Publication number: 20140352607
    Abstract: A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular shape. A method for fabricating a raw material for growing an ingot according to the embodiment comprises the steps of: preparing an ultrahigh-purity powder; and granulating the ultrahigh-purity powder. A method for fabricating an ingot according to the embodiment comprises the steps of: preparing a raw material; filling the raw material in a crucible; and growing a single crystal from the raw material, wherein the raw material comprises an agglomerate raw material in which fine particles are agglomerated, and the agglomerate raw material has a granular shape.
    Type: Application
    Filed: July 26, 2012
    Publication date: December 4, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Bum Sup Kim, Kyoung Seok Min
  • Publication number: 20140356274
    Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
    Type: Application
    Filed: December 14, 2012
    Publication date: December 4, 2014
    Inventors: Jung Eun Han, Dong Geun Shin, Byung Sook Kim
  • Publication number: 20140331917
    Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
    Type: Application
    Filed: December 14, 2012
    Publication date: November 13, 2014
    Inventors: Byung Sook Kim, Bum Sup Kim, Kyoung Seok Min, Dong Geun Shin, Seo Yong Ha, Jung Eun Han
  • Publication number: 20140335328
    Abstract: Provided is a nanowire manufacturing substrate, comprising a grid base layer on a substrate and a grid pattern formed by patterning the grid base layer, the grid pattern being disposed to produce a nanowire on a surface thereof. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.
    Type: Application
    Filed: July 28, 2014
    Publication date: November 13, 2014
    Inventors: Young Jae Lee, Kyoung Jong Yoo, Jun Lee, Jin Su Kim, Jae Wan Park
  • Publication number: 20140322122
    Abstract: Porous three-dimensional networks of polyimide and porous three-dimensional networks of carbon and methods of their manufacture are described. For example, polyimide aerogels are prepared by mixing a dianhydride and a diisocyanate in a solvent comprising a pyrrolidone and acetonitrile at room temperature to form a sol-gel material and supercritically drying the sol-gel material to form the polyimide aerogel. Porous three-dimensional polyimide networks, such as polyimide aerogels, may also exhibit a fibrous morphology. Having a porous three-dimensional polyimide network undergo an additional step of pyrolysis may result in the three dimensional network being converted to a purely carbon skeleton, yielding a porous three-dimensional carbon network. The carbon network, having been derived from a fibrous polyimide network, may also exhibit a fibrous morphology.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Applicant: Aerogel Technologies, LLC
    Inventors: Nicholas Leventis, Chariklia Sotiriou-Leventis, Chakkaravarthy Chidambareswarapattar
  • Patent number: 8859931
    Abstract: A process and apparatus for preparing a nanopowder are presented. The process comprises feeding a reactant material into a plasma reactor in which is generated a plasma flow having a temperature sufficiently high to vaporize the material; transporting the vapor with the plasma flow into a quenching zone; injecting a preheated quench gas into the plasma flow in the quenching zone to form a renewable gaseous condensation front; and forming a nanopowder at the interface between the renewable controlled temperature gaseous condensation front and the plasma flow.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: October 14, 2014
    Assignee: Tekna Plasma Systems Inc.
    Inventors: Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo, Xiaobao Fan, Nicolas Dignard
  • Publication number: 20140291700
    Abstract: An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is obtained by: cutting out a c-plane growth seed crystal of a high offset angle from an a-plane grown crystal; applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range; cutting out a c-plane growth crystal of a low offset angle from the obtained c-plane grown crystal; and applying c-plane growth so that the density of screw dislocations introduced into a c-plane facet may fall in a prescribed range. An SiC wafer and a semiconductor device are obtained from such an SiC single crystal.
    Type: Application
    Filed: December 3, 2012
    Publication date: October 2, 2014
    Inventors: Itaru Gunjishima, Yasushi Urakami, Ayumu Adachi
  • Publication number: 20140287907
    Abstract: This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).
    Type: Application
    Filed: June 9, 2014
    Publication date: September 25, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Syed B. Qadri, Arne W. Fliflet, M. Ashraf Imam, Bhakta B. Rath, Edward P. Gorzkowski, III
  • Publication number: 20140231826
    Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.
    Type: Application
    Filed: October 3, 2013
    Publication date: August 21, 2014
    Inventors: Tangali S. Sudarshan, Amitesh Srivastava
  • Publication number: 20140227159
    Abstract: A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.
    Type: Application
    Filed: July 3, 2012
    Publication date: August 14, 2014
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Kouki Ichitsubo, Kenta Masuda, Masakazu Suzuki, Kohei Kawano, Atsushi Kumasaka