Of Hydrogen (e.g., Silane, Etc.) Patents (Class 423/347)
  • Patent number: 9926203
    Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.
    Type: Grant
    Filed: September 3, 2014
    Date of Patent: March 27, 2018
    Assignee: DOW CORNING CORPORTION
    Inventor: Xiaobing Zhou
  • Patent number: 9908781
    Abstract: The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: March 6, 2018
    Assignee: Evonik Degussa GmbH
    Inventors: Ekkehard Mueh, Hartwig Rauleder, Jaroslaw Monkiewicz, Reinhold Schork
  • Patent number: 9764961
    Abstract: High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: September 19, 2017
    Assignee: NIPPON SHOKUBAI CO., LTD.
    Inventors: Shin-ya Imoto, Takashi Abe, Morihiro Kitamura, Hikaru Takahashi, Takehiko Morita, Tatsuhiko Akiyama
  • Patent number: 9738532
    Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: August 22, 2017
    Assignee: Evonik Degussa GmbH
    Inventors: Juergen Erwin Lang, Hartwig Rauleder, Ekkehard Mueh
  • Patent number: 9718694
    Abstract: By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.
    Type: Grant
    Filed: May 3, 2014
    Date of Patent: August 1, 2017
    Assignee: SiTec GmbH
    Inventor: Mark William Dassel
  • Patent number: 9567228
    Abstract: Provided are a catalyst for producing a higher silane with high yield at low cost by performing a reaction at relatively low temperature while inhibiting decomposition into solid silicon; and a process using the catalyst for producing a higher silane. The catalyst for producing a higher silane includes a porous oxide and is used to convert a lower silane to a higher silane wherein the porous oxide has at least regularly arranged pores and is primarily composed of silicon oxide, wherein a content of alkali metals and alkali earth metals in the porous oxide is not less than 0.00 wt % and not more than 2.00 wt %.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: February 14, 2017
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Tatsumi Matsushita, Yoshinori Nouji, Akira Matsuura
  • Patent number: 9561965
    Abstract: The present invention relates to a continuous process for hydrogenating halogen-containing silane compounds having at least three silicon atoms, in which at least one halogen-containing silane compound having at least three silicon atoms and at least one hydrogenating agent are converted continuously to form at least one hydridosilane compound having at least 3 silicon atoms and oxidized hydrogenating agent, and wherein oxidized hydrogenating agent is withdrawn and reduced, and the reaction product of this reduction reaction is sent back to the hydrogenation, to the hydridosilane compounds obtainable by this process and to the use thereof.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: February 7, 2017
    Assignee: Evonik Degussa GmbH
    Inventors: Min-Zae Oh, Jens Haubrock, Thorsten Schwaertzke, Imad Moussallem, Martin Trocha
  • Patent number: 9481579
    Abstract: The present invention relates to a method for preparing a hydrosilane using heteroatom-containing activated carbon, more particularly to a method for economically preparing a high-purity hydrosilane by redistribution of a chlorosilane using a heteroatom-containing activated carbon catalyst.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: November 1, 2016
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Bok Ryul Yoo, Joon Soo Han, Dong Won Lee
  • Patent number: 9278864
    Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: March 8, 2016
    Assignees: OCI COMPANY LTD., INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES
    Inventors: Taek Joong Kim, Yong Il Kim, Kyung Yeol Kim, Deok Yun Kim, Ashurov Khatam, Salikhov Shavkat, Rotshteyn Vladimir, Ashurova Khekayat, Kurbanov Aziz, Abdisaidov Ilyos, Azizov Sultan, Ashurov Rustam
  • Patent number: 9193742
    Abstract: The invention is directed to a process for the preparation of thiocarboxylate silane comprising reacting an aqueous solution of a salt of a thiocarboxylic acid with a haloalkylalkoxysilane in the presence of a solid supported catalyst. The invention is also directed to a process for the preparation of an aqueous solution of a salt of a thiocarboxylic acid which comprises reacting an aqueous solution of a sulfide and/or hydrosulfide with a carboxylic acid halide and/or acid anhydride.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: November 24, 2015
    Assignee: Momentive Performance Materials Inc.
    Inventors: Tiberiu Ladislau Simandan, Andrea Trotto, Ilaria Vecchi, Ottavio Ursitti
  • Patent number: 9045503
    Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4?n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: June 2, 2015
    Assignee: SHOWA DENKO K.K.
    Inventors: Hiromoto Ohno, Toshio Ohi, Haruaki Ito, Fanil Makhmutov
  • Patent number: 9034292
    Abstract: An apparatus for producing disilane through pyrolysis of monosilane, includes: a monosilane pyrolysis unit; a solid particle removal unit which removes solid particles generated in the pyrolysis unit; a condensing unit which liquefies and collects unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms as pyrolysis products excluding hydrogen from a gas with the solid particles removed; a first separation unit which separates monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; and a second separation unit which separates disilane and higher silanes from the mixture with the monosilane removed. In accordance with the present disclosure, disilane can be produced economically and efficiently with high purity through pyrolysis of monosilane.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: May 19, 2015
    Assignee: OCI Materials Co., Ltd.
    Inventors: Won Ho Lee, Young Ha Song, Sam Bong Kwon
  • Patent number: 9034291
    Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 19, 2015
    Assignee: Spawnt Private S.a.r.l.
    Inventors: Norbert Auner, Christian Bauch, Rumen Deltschew, Sven Holl, Javad Mohsseni
  • Patent number: 9023297
    Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: May 5, 2015
    Assignee: Schmid Silicon Technology GmbH
    Inventors: Adolf Petrik, Christian Schmid, Jochem Hahn
  • Patent number: 9017630
    Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: April 28, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Martin Trocha, Hartwig Rauleder, Ekkehard Mueh, Harald Stueger, Christoph Walkner
  • Patent number: 9011803
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: April 21, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 9011812
    Abstract: The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula SinX2n+2 (where n?3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula SimX2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula SimX2m+2 is hydrogenated to form a hydridosilane of the generic formula SimH2m+2, the hydridosilane of the generic formula SimH2m+2 is separated from partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1) are hydrogenated again.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: April 21, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Jens Haubrock, Udo Knippenberg, Thorsten Schwaertzke, Joerg Zoellner, Stephan Wieber
  • Publication number: 20150078980
    Abstract: An apparatus for producing disilane through pyrolysis of monosilane, includes: a monosilane pyrolysis unit; a solid particle removal unit which removes solid particles generated in the pyrolysis unit; a condensing unit which liquefies and collects unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms as pyrolysis products excluding hydrogen from a gas with the solid particles removed; a first separation unit which separates monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; and a second separation unit which separates disilane and higher silanes from the mixture with the monosilane removed. In accordance with the present disclosure, disilane can be produced economically and efficiently with high purity through pyrolysis of monosilane.
    Type: Application
    Filed: November 26, 2014
    Publication date: March 19, 2015
    Inventors: Won Ho Lee, Young Ha Song, Sam Bong Kwon
  • Patent number: 8974761
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: March 10, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 8956584
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: February 17, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Publication number: 20150034500
    Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.
    Type: Application
    Filed: August 4, 2014
    Publication date: February 5, 2015
    Inventors: Han Sung KIM, Mitchell Hugh WESTON, Patrick FULLER, Paul Wai-Man SIU
  • Patent number: 8940264
    Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: January 27, 2015
    Assignee: Wacker Chemie AG
    Inventors: Walter Haeckl, Karl Hesse, Wilhelm Hoebold, Reinhard Wolf
  • Publication number: 20140369918
    Abstract: Silane and hydrohalosilanes of the general formula HySiX4-y (y=1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.
    Type: Application
    Filed: June 14, 2013
    Publication date: December 18, 2014
    Inventor: William C. Breneman
  • Patent number: 8889092
    Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: November 18, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Jutta Hessing, Janette Klatt
  • Patent number: 8883111
    Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: November 11, 2014
    Assignee: Wacker Chemie AG
    Inventors: Wolfgang Knies, Hans Eiblmeier
  • Publication number: 20140328740
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Application
    Filed: July 18, 2014
    Publication date: November 6, 2014
    Applicant: SUNEDISON LLC
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 8871168
    Abstract: A process for continuously producing monosilane by means of an apparatus comprising a reaction column, at least two upper condensers each with a reflux feed pipe, a bottom reboiler and an evaporation tank connected to a bottom portion of the reaction column; the process comprising: a) supplying dichlorosilane or a mixture of chlorosilanes to an upper stage of the reaction column via an upper feed injection point b) supplying a catalyst to said upper stage of the reaction column via a lower injection point c) introducing the resultant mixture from the top portion of the reaction column to the plurality of upper condensers d) separating monosilane from condensates in the upper condensers e) recycling the condensates through the reflux feed pipes to the upper stage of the reaction column f) bringing the condensates into contact with the catalyst in the reaction column.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: October 28, 2014
    Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Isao Abe, Jérôme Beauvisage, Shinji Tomita
  • Patent number: 8846507
    Abstract: Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: September 30, 2014
    Assignee: Thin Film Electronics ASA
    Inventors: Dmitry Karshtedt, Joerg Rockenberger, Fabio Zurcher, Brent Ridley, Erik Scher
  • Patent number: 8834825
    Abstract: Methods for producing silane by reacting a hydride and a halosilane are disclosed. Some embodiments involve use of a column which is not mechanically agitated and in which reactants may be introduced in a counter-current arrangement. Some embodiments involve use of a baffled column which has multiple reaction zones.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: September 16, 2014
    Assignee: SunEdison, Inc.
    Inventors: Baisheng Zou, Puneet Gupta
  • Patent number: 8828345
    Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventor: Mitsutoshi Narukawa
  • Patent number: 8821635
    Abstract: Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
    Type: Grant
    Filed: April 8, 2005
    Date of Patent: September 2, 2014
    Assignee: Arizona Board of Regents on Behalf of Arizona State University
    Inventors: John Kouvetakis, Ignatius S. T. Tsong, Changwu Hu, John Tolle
  • Patent number: 8821825
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: September 2, 2014
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 8815201
    Abstract: The present invention is directed to an in situ process for regenerating a reforming catalyst within a reactor by: (a) removing a carbon containing deposit from the reforming catalyst, (b) contacting the reforming catalyst with oxygen under catalyst rejuvenation conditions to provide a rejuvenated catalyst, (c) purging a portion of the oxygen from the rejuvenated catalyst such that residual oxygen is retained within the reactor, and (d) introducing hydrogen into the reactor at a rate to provide a reactor temperature increase in the range from 25 to 45° F.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: August 26, 2014
    Assignee: Chevron U.S.A. Inc.
    Inventor: Lawrence E. Lew
  • Publication number: 20140235884
    Abstract: The present application includes a method of preparing silicon nanocrystals (Si-NCs) comprising combining silica particles with magnesium and heating said combination under conditions to form Si-NCs, wherein the silica particles are obtained using sol gel chemistry.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 21, 2014
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan G.C. Veinot, Mita Dasog
  • Patent number: 8802046
    Abstract: Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: August 12, 2014
    Assignee: Wacker Chemie AG
    Inventors: Dirk Weckesser, Rainer Hauswirth
  • Publication number: 20140219893
    Abstract: High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.
    Type: Application
    Filed: December 23, 2013
    Publication date: August 7, 2014
    Applicant: Nippon Shokubai Co., Ltd.
    Inventors: Shin-ya IMOTO, Takashi ABE, Morihiro KITAMURA, Hikaru TAKAHASHI, Takehiko MORITA, Tatsuhiko AKIYAMA
  • Patent number: 8795613
    Abstract: The aluminum content of neopentasilane is reduced by treatment with organic compounds D which contain N, O, and/or S atoms and which have free electron pairs on these atoms.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: August 5, 2014
    Assignee: Wacker Chemie AG
    Inventor: Dennis Troegel
  • Patent number: 8741253
    Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.
    Type: Grant
    Filed: May 25, 2009
    Date of Patent: June 3, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Andre Ebbers, Guido Stochniol, Martin Trocha, Yücel Önal, Jörg Sauer, Bernhard Stützel, Dorit Wolf, Harald Stüger
  • Patent number: 8715597
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: May 6, 2014
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Patent number: 8709369
    Abstract: The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: April 29, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Guido Stochniol, Thomas Quandt
  • Publication number: 20140113811
    Abstract: Provided are methods for storing gases on porous adsorbents, methods for optimizing the storage of gases on porous adsorbents, methods of making porous adsorbents, and methods of gas storage of optimized compositions, as in systems containing porous adsorbents and gas adsorbed on the surface of the porous adsorbent. The disclosed methods and systems feature a constant or increasing isosteric enthalpy of adsorption as a function of uptake of the gas onto the exposed surface of a porous adsorbent. Adsorbents with a porous geometry and surface dimensions suited to a particular adsorbate are exposed to the gas at elevated pressures in the specific regime where n/V (density) is larger than predicted by the ideal gas law by more than several percent.
    Type: Application
    Filed: October 10, 2013
    Publication date: April 24, 2014
    Inventors: Nicholas P. STADIE, Brent T. FULTZ, Channing AHN, Maxwell MURIALDO
  • Patent number: 8691055
    Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: April 8, 2014
    Assignee: MEMC Electronic Materials SpA
    Inventor: Gianfranco Ghetti
  • Publication number: 20140093443
    Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.
    Type: Application
    Filed: June 30, 2011
    Publication date: April 3, 2014
    Applicant: Spawnt Private S.à.r.l.
    Inventors: Norbert Auner, Christian Bauch, Rumen Deltschew, Sven Holl, Javad Mohsseni
  • Patent number: 8679438
    Abstract: The invention is generally related to process for generating one or more molecules having the formula SixHy, SixDy, SixHyDz, and mixtures thereof, where x,y and z are integers ?1, H is hydrogen and D is deuterium, such as silane, comprising the steps of: providing a silicon containing material, wherein the silicon containing material includes at least 20 weight percent silicon atoms based on the total weight of the silicon containing material; generating a plasma capable of vaporizing a silicon atom, sputtering a silicon atom, or both using a plasma generating device; and contacting the plasma to the silicon containing material in a chamber having an atmosphere that includes at least about 0.5 mole percent hydrogen atoms and/or deuterium atoms based on the total moles of atoms in the atmosphere; so that a molecule having the formula SixHy; (e.g., silane) is generated. The process preferably includes a step of removing one or more impurities from the SixHy (e.g.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: March 25, 2014
    Inventors: Richard M. Laine, Dean Richard Massey, Peter Young Peterson
  • Patent number: 8658888
    Abstract: A solar energy utilization device wherein the surface of the incident light side of the transparent base material 1 is covered by water-and-oil-shedding transparent fine particles 5 being bound and fixed to the surface. A method for manufacturing a solar energy utilization device comprising process A of manufacturing reactive transparent fine particles 9 with the first functional group at one end; process B of manufacturing reactive transparent base material 4 with the second functional group at one end forming a covalent bond with the first functional group; process C of manufacturing transparent base material 10 by reacting the reactive transparent fine particles 9 with the reactive transparent base material 4 for binding and fixing the reactive transparent fine particles 9 to the surface; and process D of forming water-and-oil-shedding coating 16 on the surface of the transparent fine particles 5 being bound and fixed to the surface of the transparent base material 10.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: February 25, 2014
    Assignee: Empire Technology Development LLC
    Inventor: Kazufumi Ogawa
  • Publication number: 20140012029
    Abstract: Provided is a method for efficiently obtaining cyclohexasilane using a cyclic silane dianion salt as a raw material without a by-product such as silane gas by a simple device. The method for producing cyclohexasilane has a feature that a cyclic silane dianion salt represented by the following general formula (i) or general formula (ii) is reacted with an aluminum-based reducing agent or a boron-based reducing agent: wherein X represents a halogen element, a represents an integer of 0 to 6, and R1 to R4 each independently represent a hydrogen atom, an alkyl group, or an aryl group; wherein X represents a halogen element, a represents an integer of 0 to 6, and R5 to R8 each independently represent a hydrogen atom, an alkyl group, or an aryl group.
    Type: Application
    Filed: July 3, 2013
    Publication date: January 9, 2014
    Inventors: Takashi ABE, Shin-ya IMOTO, Morihiro KITAMURA, Hikaru TAKAHASHI
  • Publication number: 20140004029
    Abstract: The aluminum content of neopentasilane is reduced by treatment with organic compounds D which contain N, O, and/or S atoms and which have free electron pairs on these atoms.
    Type: Application
    Filed: February 28, 2012
    Publication date: January 2, 2014
    Applicant: WACKER CHEMIE AG
    Inventor: Dennis Troegel
  • Patent number: 8603426
    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 10, 2013
    Assignee: Kovio, Inc.
    Inventors: Klaus Kunze, Wenzhuo Guo, Fabio Zürcher, Mao Takashima, Laila Francisco, Joerg Rockenberger, Brent Ridley
  • Publication number: 20130272948
    Abstract: A process for continuously producing monosilane by means of an apparatus comprising a reaction column, at least two upper condensers each with a reflux feed pipe, a bottom reboiler and an evaporation tank connected to a bottom portion of the reaction column; the process comprising: a) supplying dichlorosilane or a mixture of chlorosilanes to an upper stage of the reaction column via an upper feed injection point b) supplying a catalyst to said upper stage of the reaction column via a lower injection point c) introducing the resultant mixture from the top portion of the reaction column to the plurality of upper condensers d) separating monosilane from condensates in the upper condensers e) recycling the condensates through the reflux feed pipes to the upper stage of the reaction column f) bringing the condensates into contact with the catalyst in the reaction column.
    Type: Application
    Filed: August 29, 2011
    Publication date: October 17, 2013
    Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR EXPOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Isao Abe, Shinji Tomita
  • Patent number: 8551298
    Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: October 8, 2013
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Timothy Dinh Truong, Zhihui Gu, Puneet Gupta