Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

Abstract: Instabilities in the pyrogenic production of fumed silica caused by use of silanes having low ignition temperatures are caused by mixing the silanes, at a temperature above their dew point(s) with fuel gas in the absence of the use of a dynamic or static mixer, and then combining the resultant mixed stream with an oxygen containing gas and igniting. Self-ignition of the silanes and also the deposition of flammable or pyrophoric substances are avoided.

Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by catalysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of n-tetrasilane.

Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.

Abstract: Methods of selectively synthesizing n-tetrasilane are disclosed. N-tetrasilane is prepared by pyrolysis of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), or mixtures thereof. More particularly, the disclosed synthesis methods tune and optimize the n-tetrasilane:i-tetrasilane isomer ratio. The isomer ratio may be optimized by selection of process parameters, such as temperature, residence time, and the relative amount of starting compounds. The disclosed synthesis methods allow facile preparation of n-tetrasilane.

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: The high-efficiency synthesis and purification recycling system of higher silane has a liquid nitrogen cooling system. The liquid nitrogen cooling system has a liquid nitrogen storage tank for being configured to distribute ?196° C. liquid nitrogen via a first cooling tube to the hydrogen column and the mono-silane column for a first cooling process; a second cooling tube is configured to distribute ?160° C. nitrogen after the first cooling process into the first distillation column, the second distillation column, the third distillation column and the recycling drum for a second cooling process, a third cooling tube is configured to distribute ?30° C. nitrogen after the second cooling process into the disilane drum for a third cooling process, and a fourth cooling tube is configured to distribute 25° C. nitrogen after the third cooling process into the silicon particle disposal system for a blowback regeneration process and to generate an anaerobic environment.

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: The invention relates to a process for dismutating at least one halosilane and reducing the content of extraneous metal and/or a compound containing extraneous metal in the at least one halosilane and in the at least one silane obtained, by contacting at least one halosilane of the general formula I, HnSiClm (I), where n and m are integers and n=1, 2 or 3 and m=1, 2 or 3 and n+m=4, with a particulate, organic, amino-functional resin to obtain at least one silane of the general formula II, HaSiClb (II), where a and b are integers and a=0, 2, 3 or 4 and b=0, 1, 2 or 4 where a+b=4, in one step, in which the content of extraneous metal and/or compounds containing extraneous metal has been reduced compared to the halosilane of the formula I. The invention further provides for the use of this resin for dismutating halosilanes and as an absorbent of extraneous metals or compounds containing extraneous metal in a process for preparing monosilane.

Abstract: High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Abstract: By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.

Abstract: Provided are a catalyst for producing a higher silane with high yield at low cost by performing a reaction at relatively low temperature while inhibiting decomposition into solid silicon; and a process using the catalyst for producing a higher silane. The catalyst for producing a higher silane includes a porous oxide and is used to convert a lower silane to a higher silane wherein the porous oxide has at least regularly arranged pores and is primarily composed of silicon oxide, wherein a content of alkali metals and alkali earth metals in the porous oxide is not less than 0.00 wt % and not more than 2.00 wt %.

Abstract: The present invention relates to a continuous process for hydrogenating halogen-containing silane compounds having at least three silicon atoms, in which at least one halogen-containing silane compound having at least three silicon atoms and at least one hydrogenating agent are converted continuously to form at least one hydridosilane compound having at least 3 silicon atoms and oxidized hydrogenating agent, and wherein oxidized hydrogenating agent is withdrawn and reduced, and the reaction product of this reduction reaction is sent back to the hydrogenation, to the hydridosilane compounds obtainable by this process and to the use thereof.

Abstract: The present invention relates to a method for preparing a hydrosilane using heteroatom-containing activated carbon, more particularly to a method for economically preparing a high-purity hydrosilane by redistribution of a chlorosilane using a heteroatom-containing activated carbon catalyst.

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract: The invention is directed to a process for the preparation of thiocarboxylate silane comprising reacting an aqueous solution of a salt of a thiocarboxylic acid with a haloalkylalkoxysilane in the presence of a solid supported catalyst. The invention is also directed to a process for the preparation of an aqueous solution of a salt of a thiocarboxylic acid which comprises reacting an aqueous solution of a sulfide and/or hydrosulfide with a carboxylic acid halide and/or acid anhydride.

Abstract: The present invention relates to a method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR)4?n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to disproportionation reaction in a gaseous phase in the presence of an inorganic phosphate or a catalyst having a specific chemical structure based on a heteropolyacid salt structure. In the production method of the present invention, separation from the solvent can be carried out easily, the reaction proceeds quickly and the conversion rate of the starting materials is high.

Abstract: An apparatus for producing disilane through pyrolysis of monosilane, includes: a monosilane pyrolysis unit; a solid particle removal unit which removes solid particles generated in the pyrolysis unit; a condensing unit which liquefies and collects unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms as pyrolysis products excluding hydrogen from a gas with the solid particles removed; a first separation unit which separates monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; and a second separation unit which separates disilane and higher silanes from the mixture with the monosilane removed. In accordance with the present disclosure, disilane can be produced economically and efficiently with high purity through pyrolysis of monosilane.

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Abstract: A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S

Abstract: The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula SinX2n+2 (where n?3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula SimX2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula SimX2m+2 is hydrogenated to form a hydridosilane of the generic formula SimH2m+2, the hydridosilane of the generic formula SimH2m+2 is separated from partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1) are hydrogenated again.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: An apparatus for producing disilane through pyrolysis of monosilane, includes: a monosilane pyrolysis unit; a solid particle removal unit which removes solid particles generated in the pyrolysis unit; a condensing unit which liquefies and collects unreacted monosilane, and disilane and higher silanes with three (3) to seven (7) silicon atoms as pyrolysis products excluding hydrogen from a gas with the solid particles removed; a first separation unit which separates monosilane from a mixture of the liquefied unreacted monosilane, disilane and higher silanes; and a second separation unit which separates disilane and higher silanes from the mixture with the monosilane removed. In accordance with the present disclosure, disilane can be produced economically and efficiently with high purity through pyrolysis of monosilane.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.

Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.

Abstract: Silane and hydrohalosilanes of the general formula HySiX4-y (y=1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.

Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.

Abstract: The invention relates to a method for producing neopentasilanes of the general formula (1) Si(SiR3)4 (1), wherein silicon compounds of the general formula (2) R3Si—(Si—)xSiR3 (2), wherein R is selected from H, Cl, Br, and I and x stands for a nonnegative integer up to 5, are reacted in the presence of ether compounds (E).

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: A process for continuously producing monosilane by means of an apparatus comprising a reaction column, at least two upper condensers each with a reflux feed pipe, a bottom reboiler and an evaporation tank connected to a bottom portion of the reaction column; the process comprising: a) supplying dichlorosilane or a mixture of chlorosilanes to an upper stage of the reaction column via an upper feed injection point b) supplying a catalyst to said upper stage of the reaction column via a lower injection point c) introducing the resultant mixture from the top portion of the reaction column to the plurality of upper condensers d) separating monosilane from condensates in the upper condensers e) recycling the condensates through the reflux feed pipes to the upper stage of the reaction column f) bringing the condensates into contact with the catalyst in the reaction column.

Abstract: Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

Abstract: Methods for producing silane by reacting a hydride and a halosilane are disclosed. Some embodiments involve use of a column which is not mechanically agitated and in which reactants may be introduced in a counter-current arrangement. Some embodiments involve use of a baffled column which has multiple reaction zones.

Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.

Abstract: The present invention is directed to an in situ process for regenerating a reforming catalyst within a reactor by: (a) removing a carbon containing deposit from the reforming catalyst, (b) contacting the reforming catalyst with oxygen under catalyst rejuvenation conditions to provide a rejuvenated catalyst, (c) purging a portion of the oxygen from the rejuvenated catalyst such that residual oxygen is retained within the reactor, and (d) introducing hydrogen into the reactor at a rate to provide a reactor temperature increase in the range from 25 to 45° F.

Abstract: The present application includes a method of preparing silicon nanocrystals (Si-NCs) comprising combining silica particles with magnesium and heating said combination under conditions to form Si-NCs, wherein the silica particles are obtained using sol gel chemistry.

Abstract: Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.

Abstract: High purity cyclohexasilane and a method for increasing the purification efficiency thereto are provided. The method for producing cyclohexasilane of the present invention is characterized in that, in distilling crude cyclohexasilane to obtain purified cyclohexasilane, the absolute pressure during distillation is set to 2 kPa or less, and the heating temperature of crude cyclohexasilane is set to 25 to 100° C. The cyclohexasilane of the present invention contains pure cyclohexasilane at a rate of 98% by mass or more and 100% by mass or less.

Abstract: The aluminum content of neopentasilane is reduced by treatment with organic compounds D which contain N, O, and/or S atoms and which have free electron pairs on these atoms.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.

Abstract: Provided are methods for storing gases on porous adsorbents, methods for optimizing the storage of gases on porous adsorbents, methods of making porous adsorbents, and methods of gas storage of optimized compositions, as in systems containing porous adsorbents and gas adsorbed on the surface of the porous adsorbent. The disclosed methods and systems feature a constant or increasing isosteric enthalpy of adsorption as a function of uptake of the gas onto the exposed surface of a porous adsorbent. Adsorbents with a porous geometry and surface dimensions suited to a particular adsorbate are exposed to the gas at elevated pressures in the specific regime where n/V (density) is larger than predicted by the ideal gas law by more than several percent.

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.