Abstract: A solar energy utilization device wherein the surface of the incident light side of the transparent base material 1 is covered by water-and-oil-shedding transparent fine particles 5 being bound and fixed to the surface. A method for manufacturing a solar energy utilization device comprising process A of manufacturing reactive transparent fine particles 9 with the first functional group at one end; process B of manufacturing reactive transparent base material 4 with the second functional group at one end forming a covalent bond with the first functional group; process C of manufacturing transparent base material 10 by reacting the reactive transparent fine particles 9 with the reactive transparent base material 4 for binding and fixing the reactive transparent fine particles 9 to the surface; and process D of forming water-and-oil-shedding coating 16 on the surface of the transparent fine particles 5 being bound and fixed to the surface of the transparent base material 10.

Abstract: Provided is a method for efficiently obtaining cyclohexasilane using a cyclic silane dianion salt as a raw material without a by-product such as silane gas by a simple device. The method for producing cyclohexasilane has a feature that a cyclic silane dianion salt represented by the following general formula (i) or general formula (ii) is reacted with an aluminum-based reducing agent or a boron-based reducing agent: wherein X represents a halogen element, a represents an integer of 0 to 6, and R1 to R4 each independently represent a hydrogen atom, an alkyl group, or an aryl group; wherein X represents a halogen element, a represents an integer of 0 to 6, and R5 to R8 each independently represent a hydrogen atom, an alkyl group, or an aryl group.

Abstract: The aluminum content of neopentasilane is reduced by treatment with organic compounds D which contain N, O, and/or S atoms and which have free electron pairs on these atoms.

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: A process for continuously producing monosilane by means of an apparatus comprising a reaction column, at least two upper condensers each with a reflux feed pipe, a bottom reboiler and an evaporation tank connected to a bottom portion of the reaction column; the process comprising: a) supplying dichlorosilane or a mixture of chlorosilanes to an upper stage of the reaction column via an upper feed injection point b) supplying a catalyst to said upper stage of the reaction column via a lower injection point c) introducing the resultant mixture from the top portion of the reaction column to the plurality of upper condensers d) separating monosilane from condensates in the upper condensers e) recycling the condensates through the reflux feed pipes to the upper stage of the reaction column f) bringing the condensates into contact with the catalyst in the reaction column.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Method of preparing a compound of formula SinH2n+2 in which n is an integer greater than or equal to 1 and less than or equal to 4, by reaction of at least one silicide or silicon alloy in the form of powder of formula M1xM2ySiz, in which M1 is a reducing metal, M2 an alkali or alkaline-earth metal, x, y and z varying from 0 to 1, z being different from 0 and x+y different from 0, with an aqueous solution comprising CO2, said solution is or is not saturated with CO2 at the temperature and pressure of the reaction.

Abstract: The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

Abstract: Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

Abstract: There is provided a method for a purification of trichlorosilane, the method including: performing a pretreatment for separating a chlorosilane mixture from reaction products of a trichlorosilane production reaction; performing a first purification for separating the chlorosilane mixture into a first top stream and a first bottom stream; performing a second purification for separating the first top stream into a second top stream and a second bottom stream; and performing a third purification for separating the second bottom stream into a third top stream and a third bottom stream, wherein the performing of the third purification is carried out under pressure conditions higher than those of the performing of the second purification, and a heat exchange is generated between the second bottom stream and the third top stream.

Abstract: Methods for producing silicon tetrafluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce silicon tetrafluoride.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: In one embodiment of the invention, the silane and hydrogen (and inert gas) mixture is produced using catalytic gasification of silicon (or si-containing compounds including silicon alloys) with a hydrogen source such as hydrogen gas, atomic hydrogen and proton. By not separating silane from hydrogen and co-purifying all the gases (silane and hydrogen, inert gas) in the gas mixture simultaneously, the mixture is co-purified and then provide feed stock for downstream application without further diluting the silane gas. One aspect of the invention addresses the need for an improved production method, apparatus and composition for silane gas mixtures for large scale low cost manufacturing of high purity silicon and distributed on-site turnkey applications including but not limited to the manufacture of semiconductor integrated circuits, photovoltaic solar cells, LCD-flat panels and other electronic devices.

Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.

Abstract: Embodiments of a system and process for the production of ultra-high purity silane and hydrohalosilanes of the general formula HySiX4-y (y=1, 2, or 3) by a reactive distillation method are disclosed.

Abstract: A process for separating monosilane from a mixture comprising monosilane and chlorosilanes comprising: a) Introducing mixture to a condenser (3) for separating lower-boiling chlorosilanes—containing monosilane from higher-boiling chlorosilanes enriched condensates; b) Collecting said higher-boiling condensates, in a condensate buffer (19) connected to the aforesaid condenser (3) by a condensate feed pipe (8); c) Sending higher-boiling chlorosilanes enriched condensates from the aforesaid condensate buffer (19) into a subcooler (21) which is installed on a reflux feed line (7) connected to the upper portion of a chlorosilane absorber (20); d) Feeding lower-boiling chlorosilanes—containing monosilane to the aforesaid chlorosilane absorber (20) for separating monosilane; e) Extracting monosilane—rich gas from the upper portion of the aforesaid chlorosilane absorber (20).

Abstract: Process for supplying a fuel cell with hydrogen, which includes the steps:—intermediate storage of (poly)silanes or (poly)silane solutions—transfer of the (poly)silanes to a reaction chamber—reaction or hydrolysis of the silanes or silane solutions in the reaction chamber with an aqueous solution to liberate H2,—removal of the solid and/or liquid reaction products from the reaction chamber,—transfer of the H2 formed to the fuel cell. The invention also relates to a hydrogen generator for fuel cells based on silanes.

Abstract: Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Embodiments of the invention provide silicon-based nanoparticle composites, where the silicon nanoparticles are highly luminescent. Preferred embodiments of the invention are Si—O solid composite networks, e.g., glass, having a homogenous distribution of luminescent hydrogen terminated silicon nanoparticles in a homogenous distribution throughout the solid. Embodiments of the invention also provide fabrication processes for silicon-based silicon nanoparticle composites. A preferred method for forming a silicon-based nanoparticle composite disperses hydrogen terminated silicon nanoparticles and an inorganic precursor of an organosilicon gel in an aprotic solvent to form a sol. A catalyst is mixed into the sol. The sol is then permitted to dry into a gel of the silicon-based nanoparticle composite.

Abstract: Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.

Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.

Abstract: Methods for producing silane by reacting a hydride and a halosilane are disclosed. Some embodiments involve use of a column which is not mechanically agitated and in which reactants may be introduced in a counter-current arrangement. Some embodiments involve use of a baffled column which has multiple reaction zones.

Abstract: A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution.

Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.

Abstract: A method of preparing a cyclohexasilane compound from trichlorosilane is provided. The method includes contacting trichlorosilane with a reagent composition to produce a compound containing a tetradecahalocyclohexasilane dianion, such as a tetradecachlorocyclohexasilane dianion. The reagent composition typically includes (a) tertiary polyamine ligand; and (b) a deprotonating reagent, such as a tertiary amine having a pKa of at least about 10.5. Methods of converting the tetradecahalocyclohexasilane dianion-containing compound to cyclohexasilane or a dodecaorganocyclohexasilane are also provided.

Abstract: The invention relates to a method for producing higher hydridosilane wherein at least one lower hydridosilane and at least one heterogeneous catalyst are brought to reaction, wherein the at least one catalyst comprises Cu, Ni, Cr and/or Co applied to a carrier and/or oxide of Cu, Ni, Cr and/or Co applied to a carrier, the hydridosilane that can be produced according to said method and use thereof.

Abstract: The present disclosure relates to processes and systems for purifying technical grade trichlorosilane and/or technical grade silicon tetrachloride into electronic grade trichlorosilane and/or electronic grade silicon tetrachloride.

Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula S

Abstract: A process for generating energy comprises process comprises exothermically reacting Mg with SiO2 to yield at least Mg2Si and Si; b)reacting the Mg2Si to yield at least lower silanes, and at least one magnesium product; c) generating at least higher silanes from at least a portion of the lower silanes; d) combusting the higher silanes and the Si to yield at least one silicon product.

Abstract: A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.

Abstract: Purified SiHCl3 and/or SiCl4 are used as a sweep gas across a permeate side of a gas separation membrane receiving effluent gas from a polysilicon reactor. The combined sweep gas and permeate is recycled to the reactor.

Abstract: The invention relates to a method for preparing a compound or mixture of compounds of the formula SinH2n+2, where n is an integer greater than or equal to 1 and less than or equal to 3, said method including a step a) of reacting at least one silicide or silicon alloy in powder form and having the formula M1xM2ySiz, where M1 is a reducing metal, M2 is an alkaline metal or alkaline earth metal, and x, y, and z vary from 0 to 1, z being different from 0 and the sum x+y being different from 0, with chlorhydric acid being pre-dissolved in an ether aprotic solvent.

Abstract: A method for making a higher silane from a lower silane comprises heating a lower silane containing stream without exposing it to temperatures more than 20° C. more than the maximum temperature of a first reaction temperature range. The heated lower silane containing stream is introduced into a first reaction zone and allowed to react. The method further comprises mixing a first gaseous mixture from the first reaction zone with a higher silane containing stream and introducing the mixed streams into a second reaction zone operating within a second reaction temperature range. A second gaseous mixture exiting the second reaction zone is separated into various streams. One stream containing unreacted lower silanes is recycled to an earlier heating step and first reaction zone. The higher silane containing stream is mixed with the first gaseous mixture. Average residence time is low to prevent decomposition and formation of undesired silane byproducts.

Abstract: A composition comprising at least 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride.

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: Provided is a plant for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane, wherein the plant contains: a countercurrent reactor having a double wall, a catalyst bed containing a catalyst which is located in the countercurrent reactor, a condenser at the top of the countercurrent reactor, a vaporizer unit at the bottom of the countercurrent reactor, a trichlorosilane feed line for the introduction of trichlorosilane into the countercurrent reactor, a heat exchanger, with the trichlorosilane conveyed by line via the heat exchanger and preheated there by a bottom product from the vaporizer unit and, for this purpose, the bottom product is fed by line via the heat exchanger into the double wall at a level in the lower part of the countercurrent reactor and discharged from the double wall at a level in the upper part of the countercurrent reactor, a condensation unit downstream of the condenser, and a distillation column having an outlet for monosilane.

Abstract: A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.

Abstract: The present invention relates to a mixture of an oligomeric, blocked aminosilane (azomethine structure) and a monomeric, blocked, primary amine (azomethine structure). This mixture is suitable in particular as a curing agent, crosslinker and adhesion promoter.

Abstract: This invention relates to an amorphous non-glassy ceramic composition that may be prepared by curing, calcining and/or pyrolyzing a precursor material comprising silicon, a Group III metal, a Group IVA metal, and/or a Group IVB metal.

Abstract: This invention relates to an amorphous non-glassy ceramic composition that may be prepared by curing, calcining and/or pyrolyzing a precursor material comprising silicon, a Group III metal, a Group IVA metal, and/or a Group IVB metal.

Abstract: The present invention relates to a process for purifying low molecular weight hydridosilane solutions, in which a solution to be purified comprising a) at least one low molecular weight hydridosilane, b) at least one solvent and c) at least one impurity selected from the group of the compounds having at least 20 silicon atoms and/or the group of the homogeneous catalyst systems is subjected to a crossflow membrane process with at least one membrane separation step using a permeation membrane.

Abstract: The present invention provides a protein-silane and/or protein-siloxane copolymer obtainable by reacting a protein and a silane compound, the relative amounts of the protein and the silane compound being such that in the range of from 0.1 to 0.4 silane molecule is present for each reactive amino group of the protein. The copolymer is suitable for use in hair treatment compositions and is useful in reducing damage to hair caused by flexure and/or abrasion thereof.

Abstract: A higher order silane composition, includes: a higher order silane compound; and a solvent containing one of a substituted hydrocarbon based solvent and an unsubstituted hydrocarbon based solvent. As the solvent, a solvent having a refractive index of 1.53 or more is selected so that the higher order silane compound is dissolved therein.

Abstract: A cosmetic formulation comprising porous silicon is described.

Abstract: An agent that is capable of improving dye fastness is provided. The agent includes a compound that includes at least one functional group capable of forming at least one interaction or at least one bond with a fiber or a dye molecule. Also, a method for using the agents to improve dye fastness and a dyed article including the agent are provided.

Abstract: The present invention relates to method for producing monosilane and tetraalkoxysilane comprising subjecting alkoxysilane represented by formula (1) HnSi(OR) 4-n??(1) wherein R represents alkyl group having 1 to 6 carbon atoms and n represents an integer of from 1 to 3, to dismutation reaction in a gaseous phase in the presence of a catalyst containing an alkali metal fluoride and a catalyst activator. The method can solve problems in a method for producing monosilane and tetraalkoxysilane by dismutation reaction of alkoxysilane in a liquid phase: i.e. problems such that separation from the solvent is difficult and that the reaction is too slow and not suitable for industrial production.

Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.