Abstract: The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 ?m at maximum per a thickness of 100 ?m across an entire of the single crystalline diamond, and also a method for producing the diamond.

Abstract: Embodiments of the invention include articles comprising a diamond like carbon coating or doped diamond like carbon coating on one or more surfaces of a plastic substrate or a plastic enclosure. Embodiments of the DLC or doped DLC coatings reduce the gas permeation of the coated plastic or thermoplastic to hydrogen or helium compared to the permeability of the plastic alone. The DLC or doped DLC coatings coating provides a surface resistivity of from about 107 to about 1014 ohm/square and have a transmittance that range from about 0% to about 70% less than the transmittance of the underlying plastic substrate in the range of about 300 nm to about 1100 nm. The DLC coated plastic can be used in environmental enclosures for protecting environmentally sensitive substrates such as semiconductor wafers and reticles.

Abstract: The present invention relates to polycrystalline ultra hard material cutting elements, and more particularly to a method of forming a polycrystalline ultra hard material cutting element with a thicker ultra hard layer than cutting elements formed by prior art methods. In an exemplary embodiment, such a method includes pre-sintering the ultra hard material powder to form an ultra hard material layer that is partially or fully densified prior to HPHT sintering, so that the ultra hard layer is pre-shrunk. This pre-sintering in an exemplary embodiment is achieved by means of a spark plasma process, or in another exemplary embodiment by a microwave sintering process.

Abstract: There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.

Abstract: In one aspect, the invention relates to a method of producing high-quality diamond comprising the steps of providing a mixture comprising hydrogen, a carbon precursor, and oxygen; exposing the mixture to energy at a power sufficient to establish a plasma from the mixture; containing the plasma at a pressure sufficient to maintain the plasma; and depositing carbon-containing species from the plasma to produce diamond at a growth rate of at least about 10 ?m/hr; wherein the diamond comprises less than about 10 ppm nitrogen. The invention also relates to the apparatus, gas compositions, and plasma compositions used in connection with the methods of the invention as well as the products produced by the methods of the invention. This abstract is intended as a safety scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A method of producing a single crystal CVD diamond of a desired colour which includes the steps of providing single crystal CVD diamond which is coloured and heat treating the diamond under conditions suitable to produce the desired colour. Colours which may be produced are, for example, in the pink-green range.

Abstract: The present invention relates to a process for producing a fine diamond characterized by that an explosive composition containing a compound having an aliphatic hydrocarbon ring with 4 to 15 carbons, a fullerenes or a tubular or fiber carbon nanostructure having a diameter of 1 to 100 nm as a carbon raw material is exploded for explosive synthesis, and a fine diamond obtained by said process; the ultrafine particulate diamond of 1 to 3 nm is expected, as a single nano diamond, for application of the fields such as ultrafine processing, the uniform, spherical fine particulate diamond of 0.01 to 100 ?m is expected as abrasive grains for polishing in precise processing and the like, and the needle diamond is expected for application in various sensors and the like.

Abstract: A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 ?m of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.

Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter ? that is less than about 1.0, where ? = x 6 · ? , x is the average particle size of the diamond particle size distribution, and ? is the standard deviation of the diamond particle size distribution.

Abstract: In one aspect of the invention, a method of making a dense diamond body comprises the steps of: forming a sintered polycrystalline diamond body with the use of a catalyst; forming voids in the body by removing at least some of the catalyst; and reducing the overall volume of voids by applying pressure and temperature to the body in a vessel substantially free of additional catalysts.

Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.

Abstract: This invention relates to a method of improving the crystalline perfection of IIa diamond crystals by heating the grown diamond crystals at an elevated temperature and an elevated pressure. The invention extends to grown diamond material having a low extended defect density with low nitrogen concentration.

Abstract: A method of growing a diamond mass in a liquid growth medium. The liquid growth medium can include a carbon source, a diamond growth catalyst such as a diamond catalyst metal-rare earth element alloy or nanocatalyst, and a dissociated hydrogen of a hydrogen source. The carbon source provides carbon atoms for growing diamond and can include a diamond seed material for diamond growth. The molten liquid phase provides a diamond growth catalyst which allows the carbon to form diamond at the temperature and low pressure conditions discussed. Furthermore, the dissociated hydrogen acts as a concentrator for assembling carbon atoms at a relatively high concentration which mimicks, in some respects, diamond growth under more conventional high pressure processes without the high pressure.

Abstract: The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

Abstract: An apparatus and method of forming a composite body including the steps of forming a diamond material layer having a first surface from diamond crystals having a nitrogen content of less than 100 ppm; providing a substrate; and bonding the first surface of the diamond material layer and the substrate under high pressure and high temperature. The composite body has a diamond material layer formed from diamond crystals having a nitrogen content of less than 100 ppm. The diamond material layer has a first surface and a substrate. The first surface of the diamond material layer and the substrate are bonded together under high pressure and high temperature.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less.

Abstract: An improved method for controlling nucleation sites during superabrasive particle synthesis can provide high quality industrial superabrasive particles with high yield and a narrow size distribution. The synthesis method can include forming a particulate crystal growth layer by mixing a raw material and a catalyst material and then placing the crystalline seeds in a predetermined pattern in the growth layer. Preferably, seeds can be substantially surrounded by catalyst material. The growth precursor can be maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. The crystalline seeds can be placed in a predetermined pattern using a template, a transfer sheet, vacuum chuck or similar techniques. The superabrasive particles grown using the described methods typically have a high yield of high quality industrial particles and a narrow distribution of particle sizes.

Abstract: An aqueous suspension liquid of finely divided diamond particles comprising 0.05 to 160 parts by weight of a finely divided diamond particles in 1000 parts of water, wherein; (i) the finely divided diamond particles have an element composition consisting mainly of 72 to 89.5% by weight of carbon, 0.8 to 1.5% of hydrogen, 1.5 to 2.5% of nitrogen, and 10.5 to 25.0% of oxygen; (ii) and, almost all of said diamond particles are in the range of 2 nm to 50 nm in diameters thereof (80% or more by number average, 70% or more by weight average), (iii) and, said finely divided diamond particles exhibit a strongest peak of the intensity of the Bragg angle at 43.9° (2?±2°), strong and characteristic peaks at 73.5° (2?±2°)and 95° (2?±2°), a warped halo at 17° (2?±2°), and no peak at 26.5°, by X-ray diffraction (XRD) spectrum analysis using Cu—K? radiation when dried, (iv) and, specific surface area of said diamond particles when dry state powder is not smaller than 1.

Abstract: The present invention relates to a method of making a more permanent remembrance from a gift that includes organic material, wherein the gift has ephemeral beauty and symbolizes the feelings of a gift-giver toward a recipient. This method includes transforming the ephemeral beauty of the gift to a more permanent or eternal manifestation that symbolizes the feelings of the gift-giver toward the recipient. This result is conveniently achieved by initially converting the gift into carbon or a carbon-containing compound that is suitable for preparing a synthetic diamond, and then converting the carbon or carbon-containing compound under suitable pressure and temperature conditions to form a gem quality synthetic diamond.

Abstract: In certain embodiments, a method of processing detonation nanodiamonds to fractionate the detonation nanodiamonds involves, in order forming a combination of detonation nanodiamonds and a solvent, said solvent containing at least approximately 10% DMSO (v/v), applying a dispersive technique to said combination, subjecting said combination to a procedure that causes nanodiamond particles of a first size range to be substantially spatially separated from nanodiamonds of a second size range, and collecting said nanodiamonds of said first size range essentially free of said second size range. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.

Abstract: A sintered polycrystalline diamond material (PCD) of extremely fine grain size is manufactured by sintering under high pressure/high temperature (HP/HT) processing, a diamond powder which is blended with a pre-milled source catalyst metal compound. The PCD material has an average sintered diamond grain structure of less than about 1.0 ?m.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: An object of this invention is to provide a fine powder of diamond particles of less than 50 nm with a narrow particle size range. The diamond is single crystalline and characterized with a lot of sharp edges and sharp points. Another object is to provide a method for efficiently producing such fine powder. The method comprises mechanically crushing a raw material of single crystalline diamond particles to prepare starting minute particles of diamond, then imparting hydrophilic quality to the surface of diamond particles. As hydrophilic the diamond particles are dispersed in water to form a slurry, which is set and kept weakly alkaline. The slurry is then subjected to a preliminary grading step, whereby the slurry is removed of a top particle size fraction of the diamond particles that has a D50 size of 60 nm or more. Eliminated of said top particle size fraction, the slurry is then diluted with water to regulate the diamond concentration to 0.1% (by weight) or less.

Abstract: Polycrystalline diamond constructions include a diamond body comprising a matrix phase of bonded together diamond crystals formed at high pressure/high temperature conditions with a catalyst material. The sintered body is treated remove the catalyst material disposed within interstitial regions, rendering it substantially free of the catalyst material used to initially sinter the body. Accelerating techniques can be used to remove the catalyst material. The body includes an infiltrant material disposed within interstitial regions in a first region of the construction. The body includes a second region adjacent the working surface and that is substantially free of the infiltrant material. The infiltrant material can be a Group VIII material not used to initially sinter the diamond body. A metallic substrate is attached to the diamond body, and can be the same or different from a substrate used as a source of the catalyst material used to initially sinter the diamond body.

Abstract: A coating (20) for a component of a power transmission system (10) and a method of coating a substrate is provided. The coating is substantially metal-free with a low hydrogen to carbon ratio. The method includes placing a graphite carbon target and the substrate in a magnetron sputtering chamber. The magnetron sputtering chamber is evacuated and filled with gas. The graphite carbon target is sputtered by the ionized inert and/or hydrogen gas so that the substrate is coated with a metal-free diamond-like-carbon coating.

Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.

Abstract: A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

Abstract: [Object] The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. [Means for Solving Problems] A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.

Abstract: The invention relates to a single crystal CVD diamond material, wherein the extended defect density as characterised by X-ray topography is less than 400/cm2 over an area of greater than 0.014 cm2. The invention further relates to a method for producing a CVD single crystal diamond material according to any preceding claim comprising the step of selecting a substrate on which to grow the CVD single crystal diamond, wherein the substrate has at least one of a density of extended defects as characterised by X-ray topography of less than 400/cm2 over an area greater than 0.014 cm2; an optical isotropy of less than 1×10-5 over a volume greater than 0.1 mm3; and a FWHM X-ray rocking curve width for the (004) reflection of less than 20 arc seconds.

Abstract: An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably by chemical vapor deposition which are held together with a binder. The electrodes are useful for oxidation reduction in gas, such as hydrogen generation by electrolysis.

Abstract: The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.

Abstract: PCD composite constructions comprise a diamond body bonded to a substrate. The diamond body comprises a thermally stable diamond bonded region that is made up of a single phase of diamond crystals bonded together. The diamond body includes a PCD region bonded to the thermally stable region and that comprises bonded together diamond crystals and interstitial regions interposed between the diamond crystals. The PCD composite is prepared by combining a first volume of PCD) with a second volume of diamond crystal-containing material consisting essentially of a single phase of bonded together diamond crystals. A substrate is positioned adjacent to or joined to the first volume. The first and second volumes are subjected to high pressure/high temperature process conditions, during process the first and second volumes form a diamond bonded body that is attached to the substrate, and the second volume forms the thermally stable diamond bonded region.

Abstract: An apparatus and method of forming a composite body. The invention includes the steps of heating diamond crystals to a temperature about 1900° C. and simultaneously subjecting the diamond crystals to a pressure above about 40 k-bar, forming a diamond material layer having a first surface from the diamond crystals, providing a substrate, and bonding the first surface of the diamond material layer and the substrate under high pressure and high temperature. The composite body has a diamond material layer formed from diamond crystals. The diamond material layer has a first surface and a substrate. The first surface of the diamond material layer and the substrate are bonded together under high pressure and high temperature.

Abstract: Ultra-hard composite constructions comprise an ultra-hard body having a plurality of diamond crystals bonded to one another by a carbide reaction product. A reactant material is selected from materials that are strong carbide formers to form a carbide reaction product with diamond at HPHT conditions. The body includes a high-density diamond region positioned along a surface portion of the body and that is substantially exclusively diamond, and that has a diamond volume content of 95 to 99 percent or more. The high-density diamond region can form a working surface of the composite construction. A substrate can be attached to the body, thereby forming a compact, and can include metallic materials, ceramic materials, carbides, nitrides, cermets, and mixtures thereof. An intermediate layer can be interposed between the body and the substrate depending on the substrate and/or method of attaching the same.

Abstract: The present invention provides a carrier for immobilizing a bio-derived polymer, and especially, the present invention provides a carrier of diamond fine particle for immobilizing a DNA, RNA, protein and peptide, as well as a DNA chip substrate, a carrier for trapping virus and a vaccine. The carrier is prepared by the steps comprising: preparing an initial mixture including a diamond and a non-diamond by means of explosion of a detonating agent; subjecting the initial mixture to an oxidation treatment to obtain a suspension solution including the diamond; and separating a phase including the diamond. According to the present invention, after the oxidation treatment, a basic material having per se volatility or to generate a decomposed material having volatility is added, to neutralize with nitric acid, and thereby obtained diamond fine particle has a functional group on the surface thereof.

Abstract: The present invention provides a carrier for immobilizing a bio-derived polymer, and especially, the present invention provides a carrier of diamond fine particle for immobilizing a DNA, RNA, protein and peptide, as well as a DNA chip substrate, a carrier for trapping virus and a vaccine. The carrier is prepared by the steps comprising: preparing an initial mixture including a diamond and a non-diamond by means of explosion of a detonating agent; subjecting the initial mixture to an oxidation treatment to obtain a suspension solution including the diamond; and separating a phase including the diamond. According to the present invention, after the oxidation treatment, a basic material having per se volatility or to generate a decomposed material having volatility is added, to neutralize with nitric acid, and thereby obtained diamond fine particle has a functional group on the surface thereof.

Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 ?m and less than 400 ?m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

Abstract: The new century thrives for the synthesis of larger single crystal diamond blocks for various engineering applications and esthetic marvel. This invention makes use of triggered lightning bolts for instantaneously driving large cross-sections of high electric current density through compresses heated carbonaceous precursor (possibly seeded seed diamond and/or group VIII transition metal catalysts). The said conditions provide huge spin polarized electron motion over large volume for organized magnetization and spin interactions of the lightning bolt with many carbon atoms for the spin induced orbital rehybridization of sp and sp2 carbon to sp3 carbon and the voluminous condensation of single diamond crystals.

Abstract: Materials and Methods are provided for forming single crystal diamond growth using microwave plasma chemical vapor deposition (CVD) process in partial vacuum with a gaseous mixture containing a methane/hydrogen mixture with optional nitrogen, oxygen and xenon addition. The single crystal substrate can be ceramic material such as MgO, Al2O3, BaTiO3, and the like. A surface of the single crystal substrate is coated using an electron beam evaporation device with an alloy of iridium and a component selected from the group consisting of iron, cobalt, nickel, molybdenum, rhenium and a combination thereof. The alloy coated single crystal substrate is positioned in a microwave plasma CVD reactor and upon being subjected to a biased enhanced nucleation treatment in the presence of a gaseous mixture of methane, hydrogen, and other optional gases with a biased voltage of negative 100 to 400 volts supports the growth of a large single crystal diamond on its coated surface.

Abstract: The invention relates to carbon chemistry and is embodied in the form of a nanodiamond comprising 90.0-98.0 mass % carbon, 0.1-5.0 mass % hydrogen, 1.5-3.0 mass % nitrogen and 0.1-4.5 mass % oxygen, wherein the carbon is contained in the form a diamond cubic modification and in a roentgen-amorphous phase at a ratio of (82-95):(18-5) in terms of a carbon mass, respectively. The inventive method for producing said material consisting in detonating in a closed space of a carbon-inert gas medium a carbon-containing oxygen-deficient explosive material which is placed in a condensed phase envelop containing a reducing agent at a quantitative ratio between said reducing agent mass in the condensed envelop and the mass of the used carbon-containing explosive material equal to or greater than 0.01:1 and in chemically purifying by treating detonation products with a 2-40% aqua nitric acid jointly with a compressed air oxygen at a temperature ranging from 200 to 280° C. and a pressure of 5-15 MPa.

Abstract: The invention relates to carbon chemistry and is embodied in the form of a diamond-carbon material, in which carbon is contained in the form a diamond cubic modification and in a roentgen-amorphous phase at a ratio of (40-80):(60-20) in terms of a carbon mass, respectively, wherein the inventive material comprises 89.1-95.2 mass % carbon, 1.2-5.0 mass % nitrogen, 0.1-4.7 mass % oxygen and 0.1-1.5 mass % fire-resisting impurities. The inventive method for producing said material consisting in detonating, in a closed space of a carbon-inert gas medium, a carbon-containing oxygen-deficient explosive material, which is placed in a condensed phase envelop containing a reducing agent at a quantitative ratio between said reducing agent mass in the condensed phase and the mass of the used carbon-containing explosive material equal to or greater than 0.01:1.

Abstract: A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 ?m of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.

Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 ?m and less than 400 ?m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.

Abstract: Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

Abstract: The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a diamond body, including providing a non-particulate silicon carbide (SiC) mass having a pre-designed shape, placing the SiC mass under high pressure in association with a molten catalyst and a carbon source, and maintaining the SiC mass under high pressure to form a substantially monocrystalline diamond body. The diamond body may be formed across substantially all of the SiC mass having surface area exposed to the molten catalyst. As such, the diamond body may conform to the shape of the exposed surface area of the SiC mass.

Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.