Abstract: A method and a precursor for the large-scale production of upconverting nanocrystals derived from a NaYF4 host are provided. A rare earth based precursor is combined with a hydrophobic fluoride precursor, which is based upon a long-chain n-alkyl amine to form a reaction solution. The reaction solution is heated under an inert gas to temperatures above 300° C., whereby upconverting NaYF4-based nanocrystals are nucleated and grown.

Abstract: A vapor circulation regeneration system is provided for utilizing a vapor by circulation and regeneration. The system includes at least: a liquefaction regeneration unit including a liquefaction space where the vapor of an object to be heated is liquefied and a heating part for maintaining a liquid-like state; a vaporization unit for heating the liquid-like material by means of a heating part so as to generate a vapor; a fluid communication part for establishing fluid communication between the liquefaction regeneration unit and the vaporization unit; a processing unit for processing an object to be processed by using the vapor; a return pipe for returning the vapor used in the processing unit to the liquefaction regeneration unit; a liquefaction regeneration temperature control part for controlling the temperature of the liquefaction regeneration unit; and a vaporization temperature control part for controlling the temperature of the vaporization unit.

Abstract: A process for preparing alloy products powders is described using a self-sustaining or self-propagating SHS-type combustion process. Binary, ternary and quaternary alloy having cadmium, selenium and optionally a third element X or Y selected from Group VIA (such as S or Te) or from group IIB (such as Zn or Hg). The alloy products may be doped or not with a wide variety of other elements. The process involves heating to ignition, maintaining an elevated temperature less than melting for homogenization, followed by cooling and crushing. An optional de-oxidation process may follow to further purify the alloy and balance the stoichiometry.

Abstract: A method for manufacturing a quantum dot includes a method of manufacturing a quantum dot including heating a first mixture including a Group II precursor and a Group III precursor, adding an organic solvent to the first mixture and cooling the resultant under an inert gas atmosphere, adding a Group V precursor solution to the cooled resultant including the first mixture and the organic solvent to prepare a second mixture and heating the second mixture, and adding a mixture of a Group V precursor and a Group VI precursor to the second mixture to prepare a third mixture and allowing third mixture to react.

Abstract: The present application relates to hollow metal nano particles.

Abstract: A quantum nanomaterial having a bandgap that may be tuned to enable the quantum nanomaterial to detect IR radiation in selected regions including throughout the MWIR region and into the LWIR region is provided. The quantum nanomaterials may include tin telluride (SnTe) nanomaterials and/or lead tin telluride (PbxSn1-xTe) nanomaterials. Additionally, a method of manufacturing nanomaterial that is tunable for detecting IR radiation in selected regions, such as throughout the MWIR region and into the LWIR region, is also provided.

Abstract: A continuous flow reactor for nanoparticle synthesis comprises a modular system including a plurality of interconnected tubular components for fluid flow therethrough including a first tubular inlet and a second tubular inlet connected to a three-way junction comprising a tubular mixer. A continuous flow method for nanoparticle synthesis comprises flowing a growth solution and a reaction-initiating solution into a mixing portion of a flow reactor to form a mixed solution; flowing the mixed solution through a holding portion of the flow reactor for a predetermined residence time to form a reacted solution comprising nanoparticles; and continuously removing the reacted solution from the flow reactor so as to achieve a throughput of nanoparticles of at least about 0.5 mg/min.

Abstract: A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MxSey semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

Abstract: A nanoparticle having one or more phosphonates or phosphinate ligands on their surface can be converted into nanoparticles with sulfonate ligands on their surface, by contacting the phosphonate-containing nanoparticles with a silylsulfonate reagent. Such nanoparticles are activated toward reactions with nucleophilic groups; thus the method provides activated nanoparticles, and methods of making and using them to produce modified nanoparticles.

Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract: The present invention provides a method for the preparation of low-dimensional materials, comprising mixing a pristine material to be abraded with an organic solvent to form a mixture, abrading the material to be abraded by bead-milling, obtaining a suspension comprising the material of low dimension and the organic solvent, and removing the organic solvent from the suspension to obtain the low-dimensional material.

Abstract: The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

Abstract: Described herein are multi-segmented nanowires, nanosheets and nanobelts, and devices and methods using them for the generation of multicolor and white light.

Abstract: A metal organic framework (MOF) includes a coordination product of a metal ion and an at least bidentate organic ligand, where the metal ion and the organic ligand are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas. A porous organic polymer (POP) includes polymerization product from at least a plurality of organic monomers, where the organic monomers are selected to provide a deliverable adsorption capacity of at least 70 g/l for an electronic gas.

Abstract: A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent are also disclosed.

Abstract: Quantum dots and methods of making quantum dots are provided.

Abstract: The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo6Z8 and the precursors have a general formula of MxMo6Z8. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

Abstract: Disclosed herein is an oxide coated semiconductor nanocrystal population and a method of synthesizing the oxide coated semiconductor nanocrystal population. The method includes coating a semiconductor nanocrystal population with a species capable of being oxidized to create a coated semiconductor nanocrystal population. The method further includes exposing the coated semiconductor nanocrystal population to oxygen to create the oxide coated semiconductor nanocrystal population. Further disclosed herein is a consolidated material and a method of consolidating a material from the oxide coated semiconductor nanocrystal population.

Abstract: Disclosed are methods of exfoliating a thermoelectric material, such as bismuth telluride or antimony telluride, using one or more ionic liquids. Also disclosed is the exfoliated thermoelectric material provided by the disclosed methods. Further disclosed are compositions comprising the exfoliated thermoelectric material and methods of making and using the compositions. Additionally disclosed are exfoliated transition metal dichalcogenide compositions, methods of making and using such compositions.

Abstract: Provided are methods for making quantum nanostructures based on use of a combination of nucleation and growth precursors. The methods can be used to provide quantum nanostructures of a selected size. Also provided are quantum nanostructures, compositions comprising the quantum nanostructures, and uses of the quantum nanostructures. The quantum nanostructures can be used, for example, in imaging applications.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.

Abstract: There is provided a method for providing selenium dioxide and a copper indium gallium residue from a material comprising a compound of formula (I) CuInxGa(1-x)Se2 (I), wherein x has a value from 0.01 to 0.99, said method comprises the steps of: a) heating the material comprising the compound of formula (I) to at least 500° C., b) contacting the material with a gas flow comprising oxygen, and d) collecting the formed products. The method may be used in recycling in the field of solar cell technology.

Abstract: A novel metal-organic framework (MOF) templated process for the synthesis of highly porous inorganic sorbents for removing radionuclides, actinides, and heavy metals is disclosed. The highly porous nature of the MOFs leads to highly porous inorganic sorbents (such as oxides, phosphates, sulfides, etc) with accessible surface binding sites that are suitable for removing radionuclides from high level nuclear wastes, extracting uranium from acid mine drainage and seawater, and sequestering heavy metals from waste streams. In some cases, MOFs can be directly used for removing these metal ions as MOFs are converted to highly porous inorganic sorbents in situ.

Abstract: A quantum nanomaterial having a bandgap that may be tuned to enable the quantum nanomaterial to detect IR radiation in selected regions including throughout the MWIR region and into the LWIR region is provided. The quantum nanomaterials may include tin telluride (SnTe) nanomaterials and/or lead tin telluride (PbxSn1-xTe) nanomaterials. Additionally, a method of manufacturing nanomaterial that is tunable for detecting IR radiation in selected regions, such as throughout the MWIR region and into the LWIR region, is also provided.

Abstract: Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 ?m to 12 ?m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

Abstract: A process for preparing a mesoporous metal oxide, i.e., transition metal oxide, Lanthanide metal oxide, a post-transition metal oxide and metalloid oxide. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous metal oxide. A mesoporous metal oxide prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous metal oxides. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous metal oxides. Mesoporous metal oxides and a method of tuning structural properties of mesoporous metal oxides.

Abstract: A method for recovering a metal from either an acidic or a basic solution using an aluminum cementation process is disclosed. The method involves adding an aluminum-containing powder to a tellurium-containing solution to precipitate tellurium from the tellurium-containing solution and then removing the precipitated tellurium therefrom.

Abstract: This disclosure is directed to systems and methods for sorting a native aggregate, such as a fluorescent nanoparticle aggregate, which includes multiple objects, some of which have different characteristics, into lower level ensembles, such as monochromatic nanoparticle ensembles. In one aspect, the system includes two detectors, one of which accepts all emitted wavelengths and another one which is preceded by a filter to permit transmission of a specific wavelength or range of wavelengths. In another aspect, the system includes multiple detectors, each detector configured to detect a given wavelength or range of wavelengths, such that no two detectors have overlapping wavelengths or ranges. In yet another aspect, the system includes an optical regulator in front of a detector. This disclosure is also directed to systems and methods for multiplexing and analyzing a target analyte using the monochromatic nanoparticle ensembles.

Abstract: Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals.

Abstract: A process of synthesizing nanocrystals, the process including contacting a first precursor, a ligand compound, and a second precursor in a solvent having a boiling point of less than or equal to about 150° C. and a polarity index of less than or equal to 5, and performing a thermal decomposition reaction between the first precursor and the second precursor at a higher pressure than atmospheric pressure and at a higher temperature than a boiling point of the solvent, wherein at least one of the first precursor and the second precursor is a metal-containing precursor.

Abstract: Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.

Abstract: Disclosed herein are methods of preparing inorganic nanoparticles. In one aspect, the methods can comprise heating a reaction mixture comprising a C8 to C20 alkyl- or arylphosphonic acid and a source of cadmium or zinc to a temperature of greater than about 300° C.; adding to the reaction mixture an injection mixture comprising a C2 to C16 trialkyl- or triarylphosphine and a source of selenium, sulfur, or tellurium; and decreasing the temperature of the reaction mixture to less than about 300° C. Also disclosed herein are nanoparticles made from the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same.

Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.

Abstract: A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed.

Abstract: A gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of 75Selenium. A further gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of 75Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that the subsequent radiation peaks may also be adjusted in relative frequency.

Abstract: Provided is a process for preparation of a compound containing a group 6A element which includes reaction of at least one compound selected from a group consisting of group IB element containing compounds and group 3 A element containing compounds with a group 6A element containing compound carried out using a reductant in a desirable solvent to produce a compound containing group 1B-6A elements, a compound containing group 3 A-6A elements and/or a compound containing group 1B-3A-6A elements.

Abstract: A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MxSey semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

Abstract: Provided are a photocatalyst having higher activity for hydrogen production through water splitting and a photoelectrode comprising the photocatalyst. The photocatalyst for water splitting of the present invention comprises a Ga selenide, an Ag—Ga selenide, or both thereof.

Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

Abstract: Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.

Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Abstract: A method for producing a high yield of high quality, low size distribution, and size tunable semiconductor nanocrystals. The method produces III-V, II-VI, II-V, IV-VI, IV, ternary, quarternary, and quinary semiconductor nanocrystals (quantum dots) using a catalyst assisted two-phase reaction.

Abstract: A nanoscale heterostructure tellurium-based nanowire structure, including a rod-like tellurium nanowire structure and a metal telluride agglomeration connected to the rod-like nanowire structure. The metal telluride agglomeration may have an octahedral shape or a platelet shape. The agglomeration structures are selected from the group comprising lead telluride, cadmium telluride, bismuth telluride, and combinations thereof.

Abstract: New methods for improving thermoelectric properties of bismuth telluride based materials are described. Constrained deformation, such as by canned/sandwich, or encapsulated, rolling and plane strain channel die compression, particularly at temperatures above 80% of the melting point of the material on an absolute temperature scale, changes the crystallographic texture and grain size to desirably increase the values of both the thermoelectric power factor and the thermoelectric figure of merit ZT for the material.

Abstract: Disclosed herein are substrates which have been dry coated with a layered material. Generally, a layered material precursor composition is mixed with a milling medium so that the milling medium is coated with the layered material. The substrate is then contacted with the coated milling medium. The layered material on the milling medium transfers to the substrate to form a coating on the substrate. In particular, conductive films can be formed on a substrate without the need for additives such as a surfactant or a polymeric binder.