Abstract: A method of forming a metal chalcogenide material. The method comprises exposing a metal to a solution comprising a chalcogenide element source compound and an acid. Methods of forming memory cells including the metal chalcogenide material are also disclosed.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa??Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0?a<2.

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Abstract: A detecting device for assembly position of vehicle body side walls includes a first detecting device for location surface of front position and/or a second detecting device for location surface of reverse position. The first detecting device includes two first rules (22) and a front detecting sample (21), of which the top surface (27) is flat, and the lower surface (26) is a measuring surface. The two first rules (22) are arranged at the both ends of sides of the front detecting sample (21). The first rules (22) are perpendicular to the top surface (27) of the front detecting sample (21). The second detecting device includes two second rulers (32) and a reverse detecting sample (31), of which the top surface (37) is flat, and the lower (36) surface is a measuring surface. The two second rules (32) are arranged at the both ends of sides of the reverse detecting sample (31).

Abstract: An electronic component 100 which includes: a dielectric body (a ceramic substrate) 110 containing a dielectric ceramic composition containing Al2TeO5 as a main component; and terminals 120 each provided on a pair of opposed side surfaces of the dielectric body 110 is provided.

Abstract: A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10?13 g/g.

Abstract: This invention provides a method of biosynthesizing nanoparticles and quantum dots. The method may comprise culturing photosynthetic cells and/or fungal cells of a multicellular fungus in a culture medium comprising one or more species of metal in ionic or non-ionic form; and one or more counter elements to the one or more species of metal, or one or more compound comprising one or more counter elements to the one or more species of metal; wherein the cells biosynthesize nanoparticles and quantum dots incorporating the metal. The invention also provides biosynthesized nanoparticles and quantum dots.

Abstract: Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Abstract: Disclosed herein is a thermoelectric material having a plate type layered structure where each layer has a thickness of 30 nm or less, a method for preparing the same, and a thermoelectric module using the same. According to the present invention, as for a thermoelectric material having a nanometer-sized layered structure, crystallinity of each layer is excellent, electric conductivity of electron is improved, and phonon diffraction is induced at a grain interface between layers, and thus, a thermoelectric module having excellent thermoelectric properties can be provided.

Abstract: An ultrathin tellurium nanowire structure is disclosed, including a rod-like crystalline structure of tellurium, wherein the crystalline structure is defined by diameters of between 5-6 nm. In addition, an ultrathin tellurium-based nanowire structure is disclosed including a rod-like crystalline structure of one of lead telluride and bismuth telluride, wherein an ultrathin tellurium nanowire structure is used as a precursor to generate the rod-like crystalline structure. Furthermore, a nanoscale heterostructure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod- like portions, wherein the center rod-like portion is a tellurium-based nanowire structure and the octahedral structures are one of lead telluride, cadmium telluride, and bismuth telluride.

Abstract: This invention provides non-spherical nanoparticle compositions that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products.

Abstract: One gamma radiation source comprises 75Selenium or a precursor thereof, wherein the 75Selenium is provided in the form of one or more thermally stable compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of 75Selenium. A further gamma radiation source comprises 75Selenium or a precursor thereof, wherein the 75Selenium is provided in the form of one or more thermally stable compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of 75Selenium.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.

Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.

Abstract: A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1?x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ?0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.

Abstract: A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under reflux condition to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M1 and A. The second compound contains M2 and A. M1 is selected from Cu, Au, Ag, Na, Li and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof.

Abstract: The present invention provides a method of exfoliating a layered material (e.g., transition metal dichalcogenide) to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm. The method comprises (a) dispersing particles of a non-graphite laminar compound in a liquid medium containing therein a surfactant or dispersing agent to obtain a stable suspension or slurry; and (b) exposing the suspension or slurry to ultrasonic waves at an energy level for a sufficient length of time to produce separated nano-scaled platelets. The nano-scaled platelets are candidate reinforcement fillers for polymer nanocomposites.

Abstract: The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.

Abstract: A process and method for recovering elemental tellurium from minerals and acidic solutions using a reducing sugar as the reducing agent in order to reduce and precipitate tellurium as tellurium dioxide (TeO2) from which elemental tellurium may be recovered.

Abstract: Methods for orienting a plurality of sliver structures include applying at least one directional force to a group of sliver structures each having an orientation material applied to an edge to cause the plurality of sliver structures to orient in a common direction. The method may also include capturing the oriented sliver structures in a capture device to maintain the orientation of the sliver structures in the common direction. The oriented sliver structures may be used to form sub-assemblies such as solar array sub-assemblies that are used to generate solar power. Methods of applying an orientation material to sliver structures and resulting sliver structures are also disclosed.

Abstract: A method for making a chalcopyrite-type compound includes: reacting a reaction mixture in a first solvent under reflux condition to form the chalcopyrite-type compound containing M1, M2, and A, in which M1 is selected from Cu, Au, Ag, Na, Li, and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof; filtering the reaction mixture to obtain a crude cake; mixing the crude cake with a second solvent and a powder of a post-treatment material selected from S, Se, Te, and combinations thereof; and heating the mixture under reflux condition.

Abstract: A process comprises (a) combining (1) at least one base and (2) at least one metal carboxylate salt comprising (i) a metal cation selected from metal cations that form amphoteric metal oxides or oxyhydroxides and (ii) a carboxylate anion comprising from one to four alkyleneoxy moieties, or metal carboxylate salt precursors comprising (i) at least one metal salt comprising the metal cation and a non-interfering anion and (ii) at least one carboxylic acid comprising from one to four alkyleneoxy moieties, at least one salt of the carboxylic acid and a non-interfering, non-metal cation, or a mixture thereof; and (b) allowing the base and the metal carboxylate salt or metal carboxylate salt precursors to react.

Abstract: A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under reflux condition to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M1 and A. The second compound contains M2 and A. M1 is selected from Cu, Au, Ag, Na, Li and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof.

Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Abstract: This invention provides a method of biosynthesizing nanoparticles and quantum dots. The method may comprise culturing photosynthetic cells and/or fungal cells of a multicellular fungus in a culture medium comprising one or more species of metal in ionic or non-ionic form; and one or more counter elements to the one or more species of metal, or one or more compound comprising one or more counter elements to the one or more species of metal; wherein the cells biosynthesize nanoparticles and quantum dots incorporating the metal. The invention also provides biosynthesized nanoparticles and quantum dots.

Abstract: A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

Abstract: According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.

Abstract: The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

Abstract: A method and an apparatus for treating selenium-containing wastewater, in which wastewater containing hexavalent selenium is subjected to reduction treatment, selenium can be effectively removed at a small amount of metal leached, and, preferably, sludge produced during treatment is white, thereby facilitating the disposal of the sludge. The selenium-containing wastewater is brought into contact with an alloy or a mixture of metallic titanium and a first metal other than metallic titanium to partially leach the first metal, thereby subjecting selenium in the wastewater to reduction treatment.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: A quantum nanomaterial having a bandgap that may be tuned to enable the quantum nanomaterial to detect IR radiation in selected regions including throughout the MWIR region and into the LWIR region is provided. The quantum nanomaterials may include tin telluride (SnTe) nanomaterials and/or lead tin telluride (PbxSn1-xTe) nanomaterials. Additionally, a method of manufacturing nanomaterial that is tunable for detecting IR radiation in selected regions, such as throughout the MWIR region and into the LWIR region, is also provided.

Abstract: A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10?13 g/g.

Abstract: Described herein are processes and apparatuses for preparation and optimization of photovoltaic films and film stacks with application of electrical pulses. The process achieves high photovoltaic efficiency upon application of conditioning electrical pulses to the stack or layers of deposited photovoltaic films. This may be done at manufacture, or in the field at certain time intervals. The films of photovoltaic devices may be optimized by application of programmed voltage pulses. Furthermore, it is possible to deliver larger portion of energy from the pulse to a particular layer of a multi-stack film by rendering one or more layers of the film relatively more conductive using exposure to selected narrow wavelength of light corresponding to the band gap of the particular layer.

Abstract: Disclosed is a method of exfoliating a layered material (e.g., graphite and graphite oxide) to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm, and often between 0.34 nm and 1.02 nm. The method comprises: (a) subjecting the layered material in a powder form to a halogen vapor at a first temperature above the melting point or sublimation point of the halogen at a sufficient vapor pressure and for a duration of time sufficient to cause the halogen molecules to penetrate an interlayer space of the layered material, forming a stable halogen-intercalated compound; and (b) heating the halogen-intercalated compound at a second temperature above the boiling point of the halogen, allowing halogen atoms or molecules residing in the interlayer space to exfoliate the layered material to produce the platelets.

Abstract: An electrolytic recycling method recovers two or more component elements of one or more compounds simultaneously. A compound, such as a compound semiconductor, to be recycled is dissolved in a liquid electrolyte. Electrolysis of the dissolved compound recovers component elements simultaneously at respective negative and positive electrodes by reduction and oxidation respectively. The component elements produced may be in respective condensed phases or include a gaseous phase.

Abstract: The present invention provides a method of forming a nanocrystal of the composition CdA, with A being S or Se. The method includes forming in a suitable solvent a solution of cadmium, or a compound thereof, in a form suitable for the generation of a nanocrystal. The solvent includes a compound selected from an ether and an amine. The method further includes bringing the solution to a temperature selected in the range from about 20° C. to about 200° C. The method also includes adding at the temperature selected in the range from about 20° C. to about 200° C. the element A in a form suitable for the generation of a nanocrystal. Thereby the forming of a nanocrystal of the composition CdA is allowed.

Abstract: A thermoelectric material has a microstructure deformed by cryogenic impact. When the cryogenic impact is applied to the thermoelectric material, defects are induced in the thermoelectric material, and such defects increase phonon scattering, which results in enhanced figure of merit.

Abstract: The present invention provides a method of exfoliating a layered material (e.g., transition metal dichalcogenide) to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm. The method comprises (a) dispersing particles of a non-graphite laminar compound in a liquid medium containing therein a surfactant or dispersing agent to obtain a stable suspension or slurry; and (b) exposing the suspension or slurry to ultrasonic waves at an energy level for a sufficient length of time to produce separated nano-scaled platelets. The nano-scaled platelets are candidate reinforcement fillers for polymer nanocomposites.

Abstract: A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent.

Abstract: The invention relates to a composition capable of trapping hydrogen comprising: (a) at least one mineral compound of formula (I) below: MX(OH)??(I) in which: M represents a divalent transition element; O represents an oxygen atom; X represents an atom chosen from S, Se, Te, Po; and H represents a hydrogen atom; and (b) at least one nitrate salt of formula (II) below: ZNO3??(II) in which Z is a monovalent cation. Use of these compositions either in pulverulent form for trapping gaseous hydrogen by direct interaction, or in the form of an adjuvant in a containment material for, for example, trapping hydrogen released by radiolysis in radioactive waste packages.

Abstract: The present disclosure relates to a catalyst including platinum phosphide having a cubic structure, a method of making the catalyst, and a fuel cell utilizing the catalyst. The present disclosure also relates to method of making electrical power utilizing a PEMFC incorporating the catalyst. Also disclosed herein is a catalyst including a platinum complex wherein platinum is complexed with a nonmetal or metalloid. The catalyst with the platinum complex can exhibit good electro-chemically active properties.

Abstract: This disclosure concerns a method of making nanowires in a single flask and in non-coordinating solvent involving the reaction of PbO with oleic acid to produce Pb oleate, heating the Pb oleate to a preferred temperature with additional coordinating ligands, injecting a solution of Se to produce a second solution, heating the second solution, and maintaining the temperature, resulting in nucleation and growth of PbSe nanowires.

Abstract: A system and associated process are provided for recovering cadmium telluride (CdTe) that has plated onto components, such as components used in the manufacture of photovoltaic (PV) modules. The system includes a vacuum oven configured for maintaining a vacuum and being heated to a temperature effective for sublimating CdTe off of components placed within the oven. A collection member is disposed so that sublimated CdTe generated in the oven diffuses to the collection member. The collection member is maintained at a temperature effective for causing the sublimated CdTe to plate thereon. The collection member is subsequently processed to collect the plated CdTe.

Abstract: A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality a anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. The plurality of anisotropic nanoparticles includes a member selected from the group consisting of (In,Ga)y(S,Se)1-y, an In2Se3 stable wurtzite structure that defines a hexagonal rod nanoparticle, Cux(Se)1-x and Cu(In,Ga)y(S,Se)1-y.

Abstract: The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.?T1?1250° C. and the second heat treatment temperature T2 is set in a range of T2?T1?50.

Abstract: Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Abstract: Disclosed are inorganic nanoparticles comprising a body comprising cadmium and/or zinc crystallized with selenium, sulfur, and/or tellurium; a multiplicity of phosphonic acid ligands comprising at least about 20% of the total surface ligand coverage; wherein the nanocrystal is capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the maximum absorbance wavelength of the first electromagnetic region is different from the maximum emission wavelength of the second electromagnetic region, thereby providing a Stokes shift of at least about 20 nm, wherein the second electromagnetic region comprises an at least about 100 nm wide band of wavelengths, and wherein the nanoparticle exhibits has a quantum yield of at least about 10%. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots.