Abstract: A piezoelectric/electrostrictive microactuator is made by forming piezoelectric/electrostrictive film using a mixture of the polyvinylidene fluoride, excellent in moldability and a ceramic powder, excellent in piezoelectricity. The powder has basic composition elements of lead titanium with a particle size below 5 &mgr;m, made by a nonexplosive oxidative-reductive combustion reaction at a relatively low temperature of 100-500° C. The piezoelectric/electrostrictive microactuator may be modulated in mechanical strength and linkability between particles by using an improved colloid process which can achieve low energy consumption and low cost, because the low temperature process is simplified by using ceramic powder calcined at low temperatures.

Abstract: A ferroelectric element comprising a ferroelectric material containing at least two metals, the ferroelectric element having been produced by a process including a sol-gel process in the presence of a thickener and/or an association preventive from aqueous solutions of respective salts of the metals. The ferroelectric element is advantageous in that the handling of starting compounds and the production of the ferroelectric element are easy, the storage stability of the starting compound solution is good, the cost is low, the ferroelectric element can be formed as a thin layer, particles on the surface of the thin layer are fine and dense, and, hence, the surface smoothness is good. The ferroelectric element is excellent also in piezoelectric properties and therefore can be advantageously used as a piezoelectric element in a piezoelectric ink jet head.

Abstract: An electron-emitting device having an electroconductive film including an electron-emitting region arranged between a pair of device electrodes is manufactured. The electroconductive film is formed by applying a liquid containing the material of the film to a substrate by using an ink-jet method, then drying and heating the applied liquid. Defective conditions, if any, in the applied liquid or the precursor film formed by drying the liquid or the electroconductive film formed by heating the precursor film are detected and remedied by applying the same liquid again to the area detected for a defective condition. The detection and remedy of any defective condition may be conducted after the liquid-applying, drying or baking step.

Abstract: An apparatus for curing silicone rubber is constructed so as to perform a heating process and a curing process in a very short time without degradation of characteristics in piezoelectric elements so as to improve productivity. A piezoelectric component having uncured silicone rubber coated on the external peripheral surface thereof is held in a jig having a property of reflecting far infrared rays. The uncured silicone rubber coated on the external peripheral surface of the piezoelectric component is irradiated with far infrared rays by a far infrared panel heater so as to cure the silicone rubber.

Abstract: In a method for forming the electrode pattern of a piezoelectric element for an ultrasonic motor, metal pattern masks made of a metal material of a low expansion coefficient are disposed on the surfaces of piezoelectric elements for the ultrasonic motor, and the electrode patterns are formed on the surfaces of the piezoelectric elements through the metal pattern masks by means of a vacuum evaporation device which is equipped with a physical assistance device for rendering physical assistance with ion beams or ion plating.

Abstract: The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.

Abstract: A ferroelectric element, having a ferroelectric material containing at least two metals, the ferroelectric element having been produced by a process including the steps of: providing alkoxides of the respective metals as starting compounds; hydrolyzing the metal alkoxides in the presence of a catalytic amount of a protonic acid to increase the molecular weight; and adding a film-forming polymer material to the sol-like solution prepared in the step of increasing the molecular weight to prepare a sol-like ferroelectric precursor solution. The ferroelectric element can be formed in a thick film form without creating any cracks. It can be advantageously used as a piezoelectric element in a piezoelectric ink jet head.

Abstract: A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed on the wiring lines and on the spacers by a first HDPCVD step, such as unbiased, unclamped HDPCVD. A dielectric layer is formed on the liner layer to cover the wiring lines and to fill gaps between the wiring lines by a second HDPCVD step.

Abstract: A method of making an acceleration detecting element includes preparing two green sheets having a rectangular plate shape and being made of piezoelectric ceramic; applying a conductive paste on a center location and locations along the longitudinal direction of the first face of the first one of the green sheets thereby forming respective inner electrode patterns; laminating the first face of the second of the green sheets on the first face of the first one of the green sheets on which the inner electrode patterns have been formed; baking to simultaneously form inner electrodes and piezoelectric ceramic bodies; forming signal output electrodes by a baking treatment after applying the conductive paste on the main second surfaces of the piezoelectric ceramic bodies; and polarizing center portions and end portions of the piezoelectric ceramic bodies by using the respective signal output electrodes and the respective inner electrodes.

Abstract: A monolithic piezoelectric actuator is made of a stoichiometric PZT ceramic (2) with low A-site doping, and electrode layers (1) containing silver and palladium. It exhibits an improved mechanical strength with good piezoelectric properties. The production process leads to optimum grain sizes and optimum piezoelectric properties irrespective of any B-site doping in the ceramic. Multilayer piezoelectric actuators with high application temperatures up to 150° C. can be obtained.

Abstract: A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions.

Abstract: The surface of a Si substrate is coated with a lower electrode of precious metal (Pt), then a buffer layer comprising an oxide thin film containing Bi is deposited. On the surface of the buffer layer, a thin film of a Bi layer structured ferroelectric substance is formed. Thus, reaction of the Bi layer structured ferroelectric substance with the precious metal coating the Si substrate is avoided during crystallization carried out at a low temperature. Therefore, deviation in composition of the thin film thus formed is suppressed to provide the thin film with a high density. When the thickness of the buffer layer is not greater than five percent of that of the Bi layer structured ferroelectric thin film, electrical characteristics of a capacitor are not deteriorated. When electrical connection is conducted by polycrystalline Si, production of oxide can be avoided by deposition at 650° C.

Abstract: Highly oriented thin films exhibiting good piezoelectric effects are formed in a reaction chamber. This is done by bombarding a target comprising a piezoelectric material. Dislodged particles from the target are ionized and then electrostatically attracted to the surface of a substrate where they are neutralized and deposited in an ordered way.

Abstract: The thin film piezoelectric device which has excellent properties is disclosed. A thin film piezoelectric device according to the present invention comprises a piezoelectric film which is polycrystalline, and two electrodes by which the piezoelectric film is sandwiched, wherein the size of crystal grains of the piezoelectric film substance is 0.4 .mu.m or more and equal to or less than the thickness of the piezoelectric film. A process for producing the thin film piezoelectric device are also disclosed. The process comprising the steps of: forming the precursor film of a piezoelectric film on an electrode, first heating the electrode at a temperature of 500 to 700.degree. C. to crystallize the precursor film, thereby obtaining a piezoelectric film which is polycrystalline, and secondly heating the electrode at a temperature of 750 to 1200.degree. C.

Abstract: In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal and conductive oxide are deposited by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in the mixture gas and a substrate temperature are definite and a DC input power is changed depending on the metal and the conductive oxide.

Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

Abstract: An inventive method for manufacturing an array of M.times.N thin film actuatable mirrors, the method being capable of preserving the structural integrity thereof, comprises the steps of: preparing an active matrix; depositing a passivation layer and an etchant stopping layer, successively, on top of the active matrix; forming a thin film sacrificial layer; depositing a first mask layer made of a silicon oxide; forming a second mask layer; forming an array of M.times.N pair of cavities, one of the cavities in each pair exposing a portion of one of the connecting terminals; removing the first and the second mask layer; forming an array of M.times.N actuating structures; removing the thin film sacrificial layer to thereby form the array of M.times.N thin film actuatable mirrors. During the formation of the cavities, the cavities is formed into a trapezoidal shape as a result of the difference in the etching rate between the first mask layer and the thin film sacrificial layer.

Abstract: The electronic component, specifically a SAW component with conductive structures disposed on a substrate is encapsulated for protection against environmental influences. The electrically conductive structures are sealed with a gas diffusion-constricting protective layer formed with an electrochemical or ion bombardment process.

Abstract: A liquid precursor containing thallium is applied to a first electrode, RTP baked at a temperature lower than 725.degree. C., and annealed at the same temperature for a time period from one to five hours to yield a ferroelectric layered superlattice material. A second electrode is formed to form a capacitor, and a second anneal is performed at a temperature lower than 725.degree. C. If the material is strontium bismuth thallium tantalate, the precursor contains (m-1) mole-equivalents of strontium for each of (2.2-x) mole-equivalents of bismuth, x mole-equivalents of thallium, and m mole-equivalents of tantalum, where m=2 and 0.0<x.ltoreq.2.2.

Abstract: Electroceramic component having a component body (10), connection metallization coatings (2, 3) and also a protective encapsulation (15 to 18) made of two different materials on in each case two mutually opposite areas of the component body (10) which are free from the connection metallization coatings (2, 3).

Abstract: A piezoelectric thin-film device includes: a substrate; and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.

Abstract: The present invention provides a novel surface acoustic wave (SAW) filter having a high propagation velocity and electromechanical coupling coefficient (k.sup.2) employing A1N/A1N:H/A1N tri-layered film where both sides of A1N:H film are deposited with A1N film to protect the film from vapor, and a process for fabricating the same.

Abstract: An electron-emitting device having an electroconductive film including an electron-emitting region arranged between a pair of device electrodes is manufactured. The electroconductive film is formed by applying a liquid containing the material of the film to a substrate by using an ink-jet method, then drying and heating the applied liquid. Defective conditions, if any, in the applied liquid or the precursor film formed by drying the liquid or the electroconductive film formed by heating the precursor film are detected and remedied by applying the same liquid again to the area detected for a defective condition. The detection and remedy of any defective condition may be conducted after the liquid-applying, drying or baking step.

Abstract: The process for making a porous mass containing dense aggregates or granu includes the steps of mixing powder with more than 10% by weight of a binder to form agglomerated powder, heating the agglomerated powder to remove the binder and to grow crystallites in the powder to an average diameter exceeding 5 microns to form a porous mass containing the dense aggregates, and cooling the porous mass. The porous mass is broken up, if it is cohesive, into the aggregates containing the crystallites and the aggregates can be used to make an article, such as a transducer. The transducer is essentially a thick film and its thickness is that of the ceramic aggregates of granules. The electrodes connect to the top and to the bottom of the aggragates. As a result, the transducer material operates in the 1-3 mode.

Abstract: A piezoelectric resonator is manufactured by providing a first mother substrate in which first strip electrodes are formed such that they extend in a second direction that is substantially perpendicular to a first direction, wherein a direction of a line extending between an excitation electrode and a lead electrode is a first direction. A second mother substrate is produced by cutting the first mother substrate at a cutting position such that the length of the first strip electrodes as measured in the first direction achieves an accurate and ideal electrode overlapping length for a target resonance frequency. The second strip electrodes are formed on the resultant second mother substrate using a mask and then the second mother substrate is cut thereafter.

Abstract: A method of forming a piezoelectric element which includes piezoelectric material having a variable functionally gradient d-coefficient including coating a block having a uniform concentration of piezoelectric material with a predetermined porosity by applying a first layer having piezoelectric material with a same or different chemical composition than the block onto a surface of the block and having a different porosity than the predetermined porosity which is selected so as to provide a different morphological structure than the block; applying a subsequent layer of piezoelectric material on the first layer with the same or different chemical composition of piezoelectric material than the block and having a different porosity than the previously deposited layer so as to provide a different morphological structure than the block or the previously applied layer(s); applying heat to the block and the applied layer to dry the applied layer; and then applying heat to sinter the piezoelectric block and applied l

Abstract: A method is described of manufacturing ferroelectric bismuth-titanate layers Bi.sub.4 Ti.sub.3 O.sub.12 on a substrate, A solution containing bismuth and titanium is provided, in a stoichiometric ratio, in the form of a metallo-organic or inorganic compound which is homogeneously mixed in an organic solvent, being brought into contact with the substrate and thermally treated at a temperature in the range from 500.degree. C. to 650.degree. C., thereby forming bismuth-titanate Bi.sub.4 Ti.sub.3 O.sub.12.

Abstract: An oxide thin film comprising an oxide represented by ABO.sub.3, wherein A comprises at least one element selected from the group consisting of the groups IA, IIA, IIIA, IVB and VB of the periodic table, and B comprises at least one element selected from the group consisting of the groups IVA and VA of the periodic table, wherein said oxide thin film has a mixed structure in which crystal grains are dispersed in an amorphous phase or an ultrafine grain phase. The oxide thin film is prepared by preparing an organic solvent solution (1) of a metal alkoxide compound of A and a metal alkoxide compound of B; adding water, or water and a catalyst to the organic solvent solution (1) to prepare a solution (2); mixing the organic solvent solution (1) and the solution (2) to prepare a mixed solution; coating the mixed solution on a substrate to form a thin film; and subjecting the thin film to heat treatment.

Abstract: This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls.

Abstract: A method is provided for forming a piezoelectric layer with improved texture. In the method, a metallic material is evaporated. A noble gas is combined with a reactant gas. An atomic reactant gas flow is generated from the combined gas using a plasma source. The atomic reactant gas flow is introduced to the evaporated metallic material in the presence of a substrate under molecular flow pressure conditions to form a piezoelectric layer with improved texture on the surface of the substrate.

Abstract: A method of manufacturing a plurality of electronic multilayer components is disclosed in which each multilayer component comprises alternately stacked electrically conductive layers and electrically insulating layers, the electrically conductive layers being electrically connected in a periodically alternate arrangement to different edges of the multilayer component. The method comprises the steps of providing a substrate which is endowed with a regular pattern of surface protrusions on one face; depositing individual multilayer components into intervening spaces delimited by the protrusions; depositing electrically conductive layers for connection to a given edge of a multilayer component, wherein each connection occurs at an angle (.theta.) of less than 90.degree.

Abstract: A method is provided for forming a piezoelectric layer with improved texture. In the method, a seed material is deposited on a substrate (12) at a low deposition rate to form a seed layer (16). The low deposition rate may be a rate in the range of 10.0-150 nanometers per hour. A piezoelectric material is deposited on the seed layer at a high deposition rate to form a bulk piezoelectric layer (20) having improved texture. The high deposition rate can be a rate in the range of 500-5000 nanometers per hour.

Abstract: A piezoelectric resonator is provided which is formed of an element piece. This element piece further includes a piezoelectric material and an electrode formed on the surface of the piezoelectric material. A plug for mounting the element piece and a case for housing said element piece in an air-tight manner are also provided. The surface of the element piece is coated with a resin film formed from an excited active species of an organic compound generated through a gas discharge in a predetermined discharge gas at approximately atmospheric pressure. A method of manufacturing a piezoelectric resonator is also provided, which comprises the steps of first mounting the element piece on the plug. Next, a gas discharge in a predetermined discharge gas is produced at approximately atmospheric pressure and an excited active species of an organic compound which is a liquid or a gas at room temperature is generated as a result of this gas discharge in a gas discharge region.

Abstract: A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors, in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100.degree. C.

Abstract: A method of forming a piezoelectric element which includes piezoelectric material having a variable functionally gradient d-coefficient comprising coating a block having a uniform concentration of piezoelectric material by the steps of applying a first layer having piezoelectric material with a different chemical composition than the block onto a surface of the block to provide a different crystallographic structure than the block; and sequentially applying one or more layers of piezoelectric material on the first layer and subsequent layers with different chemical compositions of piezoelectric material also having different crystallographic structures than the block and the subsequently applied layers so as to form the piezoelectric element which has a functionally gradient d-coefficient.

Abstract: A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Abstract: A method of manufacturing a plurality of electronic multilayer component search of which alternately stacked electrically conductive and insulating layers alternately connected to opposite edges of the component, which method comprises: providing a substrate having a face endowed with a regular pattern of substantially parallel elongated protrusions separated by valleys; providing a first and a second flux of electrically conductive material in a direction subtending an angle of less than 90 with the substrate face and extending substantially parallel to the surface protrusions, and covering the thus-formed electrically conductive layers with intervening electrically insulating layers, the first and second fluxes having substantially oppositely directed in-plane components; providing said first and second fluxes with intervening insulating layers in an alternate manner as often as desired; dividing the substrate into strips, each including a protrusion, by severing the substrate along a series of planes, each

Abstract: The process for making a porous mass containing dense aggregates or granu includes the steps of mixing powder with more than 10% by weight of a binder to form agglomerated powder, heating the agglomerated powder to remove the binder and to grow crystallites in the powder to an average diameter exceeding 5 microns to form a porous mass containing the dense aggregates, and cooling the porous mass. The porous mass is broken up, if it is cohesive, into the aggregates containing the crystallites and the aggregates can be used to make an article, such as a transducer. The transducer is essentially a thick film and its thickness is that of the ceramic aggregates of granules. The electrodes connect to the top and to the bottom of the aggragates. As a result, the transducer material operates in the 1-3 mode.

Abstract: A Thin Film Bulk Acoustic Wave Resonator (FBAR), comprising a top electrode layer, a substrate, an acoustic mirror that is formed atop the substrate, and a piezoelectric layer that is formed between the top electrode layer and the acoustic mirror. The acoustic mirror is comprised of a plurality of stacked layers. One of the stacked layers forms a bottom electrode layer. At least another one of the stacked layers comprises a polymer material. The piezoelectric produces vibrations in response to a voltage being applied between the top electrode and the bottom electrode. The acoustic mirror acoustically isolates these vibrations from the substrate. The polymer material is preferably an electronic grade polymer and has a capability of withstanding a deposition of the piezoelectric layer at an elevated temperature. The layers forming the acoustic mirror which do not comprise the polymer material comprise a high acoustic impedance material such as, by example, tungsten (W).

Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si.sub.3 N.sub.4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

Abstract: A method for diffusing titanium into a single-crystal lithium niobate substrate and guided wave devices produced therefrom provide improved mode match with coupled fibers. Preferably, the titanium diffusion occurs at a diffusion temperature for a time between about 8 hours and about 18 hours. Outdiffusion of lithium oxide is allowed to occur during titanium diffusion. The outdiffused region, typically at least about 25 .mu.m, is much deeper than the titanium diffusion depth, typically about 5-10 .mu.m.

Abstract: A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Abstract: A method of producing a piezoelectric/electrostrictive film element is disclosed. The film element includes a zirconia substrate having a window which is closed by a diaphragm portion, and a piezoelectric or electrostrictive unit formed on the substrate and including a piezoelectric or electrostrictive layer between upper and lower electrodes. The method comprises the steps of: (a) preparing the substrate which has been sintered and in which at least the diaphragm portion contains alumina in an amount of 1.1-5.

Abstract: A method and apparatus for preparing thin films, a device, an electronic and magnetic apparatus, an information recording and reproducing apparatus, an information processing apparatus and a crystal preparing method from the molten state. A thin film is prepared as the substrate or the surface of the substrate is being excited and characterized by a device having at least a substrate and a thin film with at least one layer prepared thereon and an electronic and magnetic apparatus having integration of the devices, wherein at least one layer of the thin film is prepared as the surface of the substrate is being excited. The recording and reproducing apparatus for recording and reproducing information is composed of an information memory medium device having a recording layer of the thin film prepared as the surface of the substrate is being excited and a recording head whose core is prepared as the surface of the substrate is being excited.

Abstract: A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.

Abstract: A piezoelectric biosensor substrate useful for immobilizing biomolecules in an oriented manner on the surface of a piezoelectric sensor has a ladder polymer of polyacrylonitrile. To make the substrate, a solution of an organic polymer, preferably polyacrylonitrile, is applied to the surface of a piezoelectric sensor. The organic polymer is modifying by heating the polymer in a controlled fashion in air such that a ladder polymer is produced which, in turn, forms the attachment point for the biomolecules comprising the piezoelectric biosensor.

Abstract: A method for making an acoustic wave device. The method has steps of providing a substrate suitable for acoustic wave devices and processing the substrate to provide a patterned metallization thereon. The patterned metallization includes an acoustic wave filter pattern. The method also has steps of measuring a sheet resistance associated with the acoustic wave filter pattern, determining a resistance of a test pattern associated with the acoustic wave filter pattern to provide a measured resistance and computing an estimated average linewidth for the acoustic wave filter pattern from the measured resistance and the sheet resistance.

Abstract: A method for diffusing titanium into a single-crystal lithium niobate substrate and guided wave devices produced therefrom provide improved mode match with coupled fibers. Preferably, the titanium diffusion occurs at a diffusion temperature for a time between about 8 hours and about 18 hours. Outdiffusion of lithium oxide is allowed to occur during titanium diffusion. The outdiffused region, typically at least about 25 .mu.m, is much deeper than the titanium diffusion depth, typically about 5-10 .mu.m.

Abstract: A hybrid thermal imaging system (20, 120) often includes a focal plane array (30, 130), a thermal isolation structure (50, 150) and an integrated circuit substrate (60, 160). The focal plane array (30, 130) includes thermal sensitive elements (42, 142) formed from a pyroelectric film layer (82), such as barium strontium titanate (BST). One side of the thermal sensitive elements (42, 142) may be coupled to a contact pad (62, 162) disposed on the integrated circuit substrate (60, 160) through a mesa strip conductor (56, 150) of the thermal isolation structure (50, 150). The other side of the thermal sensitive elements (42, 142) may be coupled to an electrode (36, 136). The various components of the focal plane array (30, 130) may be fabricated from multiple heterogeneous layers (74, 34, 36, 82, 84) formed on a carrier substrate (70).

Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.