Abstract: A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; annealing the structure; selectively depositing a ferroelectric layer by MOCVD; annealing the structure; and completing the ferroelectric device.

Abstract: A method of forming a piezoelectric layer includes: a drying step for forming at least one ferroelectric precursor film on a lower electrode of a substrate and drying the ferroelectric precursor film; a degreasing step for carrying the substrate into a region facing a hot plate heated to a certain temperature and for degreasing the ferroelectric precursor film in a state where the substrate is supported by a proximity pin; and a baking step for further baking the degreased ferroelectric precursor film to form the degreased ferroelectric precursor film into a ferroelectric film. The piezoelectric layer is formed by repeating the drying, degreasing, and baking steps for the ferroelectric precursor film in a predetermined number of cycles. The degreasing step includes a step of adjusting a heating temperature of the ferroelectric precursor film by adjusting a distance between the hot plate and the substrate and by lowering a temperature of space on an opposite side of the substrate from the hot plate.

Abstract: A method for fabricating an FBAR device includes (a) preparing a substrate; (b) forming an insulating layer on the substrate; (c) forming a sacrificial layer on the insulating layer; (d) forming a plurality of sacrificial regions for forming air-gaps by selectively removing the sacrificial layer; (e) forming a membrane support layer on the insulating layer with the selectively removed sacrificial layer; (f) forming a membrane layer on the sacrificial regions and the membrane support layer; (g) forming a plurality of active regions on the sacrificial regions of the membrane layer so that a thickness of the active region corresponding to a series resonator differs from a thickness of the active region corresponding to a shunt resonator of the FBAR; (h) forming lower electrodes on the membrane layer including the active regions; (i) forming a piezoelectric layer on the lower electrodes; (j) forming upper electrodes on the piezoelectric layer; and (k) forming the air-gaps by removing the sacrificial regions.

Abstract: A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.

Abstract: A pattern electrode having a predetermined pattern and a connecting electrode connected to the pattern electrode are formed on one surface of a single-polarized ferroelectric substance crystal. An electric field is applied across the ferroelectric substance crystal with corona charging or electron beam irradiation from the side of the other surface of the ferroelectric substance crystal. A polarization inversion region having a shape corresponding to the predetermined pattern is thus formed in the ferroelectric substance crystal. The electric field is applied in a state, in which an electrical insulating material is located on the other surface of the ferroelectric substance crystal and at a position corresponding to at least a position of a certain area of the connecting electrode.

Abstract: In a surface acoustic wave element according to an embodiment of this invention, raised electrodes 20 formed on thin film electrodes 18 are provided with throughholes 31. Additionally, bumps 26 arranged on the raised electrodes 20 reach the thin film electrode 18 by going through an oxide film 18a of the thin film electrodes 18 after part of the bumps enters the throughholes 31 of the raised electrodes 20. By doing this, conduction is achieved between the thin film electrodes 18 and the bumps 26 formed on a piezoelectric monocrystal substrate 28. Thus, a solid oxide film 18a is formed on the surface of the thin film electrodes 18 formed from monocrystal aluminum, but part of the bumps 26 which enters the throughholes 31 of the raised electrodes 20 goes through this oxide film 18a, so conduction between the thin film electrode 18 and the bump 26 is achieved with higher accuracy.

Abstract: It is an object of the present invention to provide an ultrasonic transducer, which is so configured as to reduce the variations in characteristics, thereby to enable the stabilization of the precision, as well as to enable the improvement of the durability, and the like, a method for manufacturing the ultrasonic transducer, and an ultrasonic flowmeter. In order to attain this object, in accordance with the present invention, the ultrasonic transducer is so configured as to include a piezoelectric element and an acoustic matching layer, wherein the acoustic matching layer is made of a dry gel of an inorganic oxide or an organic polymer, and a solid skeletal part of the dry gel has been rendered hydrophobic. With this configuration, it is possible to obtain the ultrasonic transducer having an acoustic matching layer 3 which is very lightweight and has a small acoustic impedance due to the solid skeletal part of the dry gel which has been rendered hydrophobic.

Abstract: A mathod of manufacturing a piezoelectric/electrostrictive divice includes an additional member that is provided at a border between an inner wall surface of a thin plate section formed by a long ceramic plate and a side surface (cutout surface) formed by a short ceramic plate. Assuming that a surface of the additional member forms a curve C as viewed in vertical cross section, the curve C is a free curve having one inflection point. The additional member has a portion C2 which extends along the inner wall surface of the thin plate section with its surface extending substantially in parallel toward the border, and a curved portion C3 which is disposed at a part corresponding to the border.

Abstract: A method for producing a piezoelectric element by superposing a piezoelectric material made of a piezoelectric ceramic composition containing a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition represented by the general formula Pbx(Mgy/3Nb2/3)aTibZrcO3 as a main component, and 0.05 to 10.0 mass % of NiO on a ceramic substrate or on an electrode formed on the ceramic substrate, and subjecting the superposed piezoelectric material to a thermal treatment in an atmosphere where 0.03–0.5 mg/cm3 (NiO conversion amount per unit volume of a space in a container) of an atmosphere-controlling material having the same composition as the piezoelectric material is coexisted.

Abstract: A simple method for passivation of a component is presented which is particularly suitable for processing high-viscosity plastics. The component is arranged in a preproduced plastic body and is connected to the body. This method is proposed for the production of a piezoactuator arrangement, which is utilized for controlling injection valves in internal-combustion engines. The plastic consists of solid silicone and/or fluorinated silicone elastomer.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: A piezoelectric element contains a piezoelectric ceramic body having a layered perovskite structure, and has the C axis selected and oriented in the thickness direction. In the piezoelectric ceramic body, line shaped electrodes are formed perpendicular to the C axis selected and oriented. The electrodes exposed at both of the end faces of the piezoelectric ceramic body are covered with conductive materials and insulation materials. The piezoelectric ceramic body is polarized in the opposite directions on both of the sides of electrodes arranged in the width direction. Moreover, external electrodes are formed on the faces where the conductive materials and the insulation materials are formed, whereby two groups of the electrodes are arranged in an interdigital electrode form.

Abstract: The invention relates to a method of manufacturing a strain element. In one aspect, the method of the invention comprises forming a coating film of titanium or a titanium compound on a surface of a cylindrical mold, and shaping the coating film like a coil. The method invention further comprises forming a crystal film of a strain element having a property of a piezoelectric inverse effect by hydrothermal synthesis on the coating film shaped like the coil, and removing the strain element from the cylindrical mold.

Abstract: A method of manufacturing a piezoelectric component includes forming an unhardened first elastic material partially on at least a pair of end portions of a piezoelectric element, the pair of end portions including an edge portion of the piezoelectric element, hardening the first elastic material, forming an unhardened second elastic material on the entire circumference of the piezoelectric element and the first elastic material, hardening the second elastic material, forming an unhardened outer-cladding resin on the entire circumference of the second elastic material covering the piezoelectric element and the first elastic material, and hardening the outer-cladding resin.

Abstract: A method for making thin film piezoelectric elements including forming a flat-plate laminate by laminating a first electrode layer, a piezoelectric thin film, and a second electrode layer, on one surface of an element forming substrate, and forming on the one surface a plurality of thin film piezoelectric elements including connecting electrodes for electrically connecting the first electrode layer and the second electrode layer to external equipment, including forming the element holding layer including resin over the one surface of the substrate including the thin film piezoelectric elements; bonding the one surface of the substrate, opposed to a temporary fixing substrate and covered with the element holding layer, on the temporary fixing substrate by using a fixing resin; covering a peripheral area with a specified width; and removing the element forming substrate by etching in an area other than the area covered with the fixing resin, and separating the thin film piezoelectric elements held by the elemen

Abstract: A method of manufacturing an actuator comprises the steps of bonding a piezoelectric film formed on a single crystal substrate to a diaphragm structure member and removing the single crystal substrate therefrom to manufacture the actuator. The single crystal substrate is a substrate having bonded portions where a plurality of single crystal substrates are bonded together.

Abstract: A bimorph structure is produced by depositing a first material on a first surface of a first substrate to form a first element structure. A second material is deposited onto a surface of a second substrate to form a second element structure. Electrodes are deposited on a surface of each of the first element structure and the second element structure. The first element structure is bonded to a first transfer substrate, and the second element structure is bonded to a second transfer substrate. The first substrate is removed from the first element structure, and the second substrate is removed from the second element structure. Second side electrodes are deposited on a second surface of each of the first element structures and the second element structure. The first element structure and the second element structure are directly bonded to each other.

Abstract: A color shifting composition and method useful as a coating on a surface. The composition comprises a layer of piezoelectric material disposed on the surface and a layer of electrically conductive disposed on the layer of piezoelectric material. A mechanism is included for changing an electromagnetic property of the layer of piezoelectric material. Thus, the surface has a first reflective or refractive property at one setting of the mechanism and another reflective or refractive property at another setting of the mechanism. In the illustrative embodiment, the layer of piezoelectric material and the layer of electrically conductive material are sufficiently thin to be transparent to electromagnetic energy in the frequencies of interest. In the illustrative embodiment, the mechanism for changing an electromagnetic property of the layer of piezoelectric material is a source of the electrical potential.

Abstract: A method of manufacturing a piezoelectric ink-jet print-head uses a metallic layer and a thick film layer with a slot hole therein instead of a ceramic vibration plate and an ink layer. The piezoelectric layer and the upper electrode layer are formed inside the ink cavity so that overall thickness of the print head is reduced. To form the ink-jet print head, a metallic layer and a lower electrode layer are sequentially formed over a substrate. A patterned piezoelectric layer and an upper electrode layer are sequentially formed over the lower electrode layer. A patterned thick film layer with a slot hole therein is formed over the metallic layer. The thick film layer and the metallic layer together form a cavity that encloses the piezoelectric layer and the upper electrode layer. A nozzle plate having a nozzle thereon is attached to the thick film layer. The nozzle plate, the thick film layer and the metallic layer together form an ink cavity. The hole in the nozzle is continuous with the ink cavity.

Abstract: A liquid material containing metal particles is directly applied onto a piezoelectric layer with an inkjet head to form a pattern portion, and the applied liquid material is transformed into a metal layer by heat treatment.

Abstract: A method for producing a lead ferroelectric film having high relative dielectric constant and low dielectric loss by a hydrothermal process is disclosed. The method includes the step of hydrothermally forming a ferroelectric layer on a substrate, followed by the step of hydrothermally treating the resulting film in an aqueous solution having a pH of about 5 to 7.

Abstract: A process for producing a laminated ink-jet recording head including the steps of forming a titanium layer across a surface of a diaphragm, and forming a layer of a piezoelectric material on the titanium layer by a hydrothermal method.

Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

Abstract: A ferroelectric film manufactured by using a supercritical fluid. The supercritical fluid is a fluid which includes a ferroelectric element and is pressurized at a pressure ranging from the critical pressure to four times the critical pressure, for example.

Abstract: Disclosed is an element using a piezoelectric characteristic, and in particular, an SAW filter and a method for manufacturing the same. The SAW filter according to the invention is resistant to input wave of high power by employing ta-C or CNT as an acoustic wave transmission medium. The method for manufacturing the SAW filter according to the invention simplified the manufacturing process and reduced a transmission loss as well noise.

Abstract: The present invention provides a conductor composition that is prepared in the form of an ink or a paste and is for forming conductor films having excellent heat resistance on a piezoelectric ceramic material. This composition comprises a platinum powder that is a principal conductor-forming component, and a rare earth oxide powder having a mean particle size in a range of approximately 10 to approximately 100 nm.

Abstract: A color shifting composition and method useful as a coating on a surface. The composition comprises a layer of piezoelectric material disposed on the surface and a layer of electrically conductive disposed on the layer of piezoelectric material. A mechanism is included for changing an electromagnetic property of the layer of piezoelectric material. Thus, the surface has a first reflective or refractive property at one setting of the mechanism and another reflective or refractive property at another setting of the mechanism. In the illustrative embodiment, the layer of piezoelectric material and the layer of electrically conductive material are sufficiently thin to be transparent to electromagnetic energy in the frequencies of interest. In the illustrative embodiment, the mechanism for changing an electromagnetic property of the layer of piezoelectric material is a source of the electrical potential.

Abstract: A surface acoustic wave device used as a branching filter and the like in, for example, a mobile communications field to handle high frequencies of about several GHz is manufacturable by forming a metal film on a wafer-like piezoelectric substrate and selectively removing the metal film to form comb-teeth-shaped metal electrodes. The metal film is partly formed in two or more film-forming modes involving different in-wafer-plane film-forming-velocity distributions, and the remaining part thereof is formed in a fixed film-forming mode. An in-wafer-plane film-thickness distribution of a part of the metal film is precisely controllable. Forming the remaining part of the metal film precisely controls the final thickness of the metal film.

Abstract: A method for manufacturing structure on a printed circuit board substrate according to the invention includes positioning a printed circuit board substrate in a machine capable of performing piezoelectric deposition of a fluid manufacturing material. The printed circuit board substrate is aligned with a piezoelectric deposition head of the machine. Computer numeric control of the relative motion of the printed circuit board substrate and the piezoelectric deposition head allows droplets of the fluid manufacturing material to be deposited at selected locations of the printed circuit board substrate. The printed circuit board substrate includes a conductive surface layer and a masking structure that exposes selected portions of the surface layer, thereby forming traces upon removal of selected portions of the surface layer. Further, the structure manufactured on the printed circuit board may be a resistor.

Abstract: A composition for forming piezoelectric film comprising a dispersoid obtained from a metal compound, wherein the total content of the elemental halogens, halogen ions and halogen compounds contained in the composition is 10 ppm or less.

Abstract: A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.

Abstract: A method for making a piezoelectric element including a piezoelectric film formed on a substrate by a gas deposition technique includes the steps of ejecting ultra-fine particles of a piezoelectric material having a perovskite structure from an ejecting device toward the substrate, and applying an electric field to the ultra-fine particles traveling to the substrate. The substrate may be composed of a metal or a resin.

Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

Abstract: A method of manufacturing a piezoelectric thin film component utilizing seed crystals, such as crystals of titanium, as a crystal source on a bottom electrode. Crystals of piezoelectric material are grown using the seed crystals as a nucleus, wherein a crystal grain size and orientation of the piezoelectric material formed on the crystal source may be of a different orientation and crystal grain size from that of the bottom electrode. The piezoelectric thin film formed by this operation is of a polycrystalline structure. The formation of the piezoelectric thin film by this method includes a sol-gel film formation process utilizing a sol composition having an high molecular organic compound which creates a porous gel thin film. Further, the formation of the piezoelectric thin film by this method may include a metal organic decomposition process utilizing a hydrolysis inhibitor in the sol solution.

Abstract: A piezoelectric/electrostrictive device includes a pair of mutually opposing thin plate sections, a movable section, and a fixation section for supporting the thin plate sections and the movable section. One or more piezoelectric/electrostrictive elements are arranged on the pair of thin plate sections. A hole is formed by both inner walls of the pair of thin plate sections, an inner wall of the movable section, and an inner wall of the fixation section. At least one thin plate section of the pair of thin plate sections is previously bent in a direction to make mutual approach so that it has an inwardly convex configuration to the hole.

Abstract: A method of making a low-cost metal diaphragm sensor that integrates both pressure and temperature sensing in a single sensor assembly utilizes thick-film processing to form a circuit including stress and temperature sensitive elements on the outboard or exposed surface of a thin metal diaphragm separating the circuit from a pressurized fluid. Only a thin layer of dielectric separates the stress and temperature sensitive elements from the diaphragm surface. The stress sensitive elements respond to mechanical stressing of the diaphragm due to the presence of the pressurized fluid, while the temperature sensitive element responds to the temperature of the pressurized fluid. The thermal capacity of the fluid greatly exceeds that of the diaphragm, so that the temperature responsive characteristic of the temperature sensitive element accurately reflects the temperature of the pressurized fluid.

Abstract: A method of producing a piezoelectric ceramic thick film on a substrate, said method comprising:

Abstract: The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

Abstract: A method to produce a piezoelectric device having one or more piezoelectric thin film layers and two or more electrode layers. The method comprises forming an amorphous electrode layer, forming a least one amorphous piezoelectric thin film layer over the amorphous electrode layer and forming a second electrode layer over at least one piezoelectric thin film layer. Then, the amorphous piezoelectric thin film layers and the amorphous electrode layers are crystallized by hydrothermal synthesis. The hydrothermal synthesis is not performed until all of the amorphous layers are deposited.

Abstract: A piezoelectric element includes: a ceramic substrate, an electrode and a piezoelectric portion made of a piezoelectric ceramic composition containing a Pb(Mg, Ni)1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition being represented by the following general formula (1) as a main component: Pbx{(Mg1−yNiy)1/3×aNb2/3}bTicZrdO3 (1), wherein 0.95≦x≦1.05; 0.05≦y≦0.20; 0.90≦a≦1.10; b,c, and d are decimals falling in a range surrounded by (b, c, d)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200) in the coordinates with coordinate axes of said b, c and d, and b+c+d=1.000. The electrode is electrically connected to the piezoelectric portion, and the piezoelectric portion is solidly attached to the ceramic substrate directly or via the electrode.

Abstract: A method for adjusting the frequency of an electronic component device includes the step of etching an electrode disposed on a surface of the electronic component device by irradiating an ion beam onto the electrode. The ion beam irradiation is performed while moving at least one of the electronic component device and the ion beam in directions along the surface on which the electrode is disposed.

Abstract: In a tester for a surface acoustic wave device used as a filter for high frequency bands in the field of mobile communications, the tester includes: an electron gun generating an electron beam to be first electrons; a condenser lens for converging the electron beam on a substrate; an electron beam scanning portion for scanning the electron beam on the substrate; a secondary electron detector detecting second electrons generating from the substrate by irradiated first electrons; a substrate holder holding the substrate; and a conductive grounding tool which can contact the metal film. The grounding tool includes a contacting head. The grounding tool includes: a contacting head that can contact the grounding tool and the metal film; an arm portion arranged at the end of the contacting head; a shaft arranged at the other end of the contacting head, and rotating the arm portion.

Abstract: A waterborne radiation curable coating composition containing at least one acrylate functional oligomer having a functionality greater than 3 and at least one vinyl ether oligomer having a functionality greater than 1 provides a cured coating resists deep scratches.

Abstract: A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material (1) which is provided with an electrode (2,3) on either side, which resonator is situated on an acoustic reflector layer (4) formed on a surface (6) of a carrier substrate (7). In the method, the layer of piezoelectric material (1) is provided on a surface (8) of an auxiliary substrate (9), after which a first electrode (2) is formed on the layer of piezoelectric material (1). The acoustic reflector layer (4) is provided on and next to the first electrode (2), and the structure thus formed is secured with the side facing away from the auxiliary substrate (9) on the carrier substrate (7). The auxiliary substrate (9) is removed and a second electrode (3) situated opposite the first electrode (2) is provided.

Abstract: A method of fabricating an uncooled ferroelectric/pyroelectric infrared detector having a semi-transparent electrode material includes using a lattice matched substrate material and a crystallographically oriented bottom electrode material as a template for the growth of a crystallographically oriented ferroelectric/pyroelectric film. In a second preferred embodiment, the method includes fabricating a detector assembly, inverting the assembly, and attaching the inverted assembly to a circuit. This embodiment avoids temperature processing constraints associated with the circuit, and thus facilitates the use of higher growth temperatures. Advantages associated with the embodiments of the present invention include the ability to fabricate a crystallographically oriented bottom electrode material as a template for the growth of a crystallographically oriented ferroelectric/pyroelectric film. Furthermore, once the fabrication is complete, the substrate upon which the electrode is deposited can be easily removed.

Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.

Abstract: There is disclosed a manufacturing method of a piezoelectric/electrostrictive film type device including a ceramic substrate, a piezoelectric/electrostrictive operation portion containing a lower electrode, a piezoelectric/electrostrictive layer, and upper electrode stacked on the substrate, and the piezoelectric/electrostrictive layer being formed beyond at least one of electrodes to form projected portions at its ends, the method comprising the steps of forming the piezoelectric/electrostrictive layer beyond at least one of electrodes to project ends of the layer; applying a coating liquid in an amount sufficient to make the coating liquid permeate through a gap between at least a projected portion of the piezoelectric/electrostrictive layer and the substrate, and coat a predetermined portion of said at least one of electrodes; and drying thus applied coating liquid to form a coupling member to couple a projected portion of the piezoelectric/electrostrictive layer.

Abstract: A liquid material containing metal particles is directly applied onto a piezoelectric layer with an inkjet head to form a pattern portion, and the applied liquid material is transformed into a metal layer by heat treatment.

Abstract: The frequency uniformity of a film bulk acoustic resonator may be improved by controlling the thickness across a wafer of one or more layers of the film bulk acoustic resonator. One or more layers of the film bulk acoustic resonator may be deposited in a way that irregularities in the deposition process from one die to another may be controlled.

Abstract: A photopolymerization method is disclosed for attaching a chemical microsensor film to an oxide surface including the steps of pretreating the oxide surface to form a functionalized surface, coating the functionalized surface with a prepolymer solution, and polymerizing the prepolymer solution with ultraviolet light to form the chemical microsensor film. The method also allows the formation of molecular imprinted films by photopolymerization. Formation of multilayer sensing films and patterned films is allowed by the use of photomasking techniques to allow patterning of multiple regions of a selected sensing film, or creating a sensor surface containing several films designed to detect different compounds.