Abstract: A processing method of electroless plating in which a catalyst layer is absorbed on a surface of a substrate, a laser beam is selectively applied to the catalyst layer, processing of electroless plating is applied to the substrate, thereby a plating layer is not formed on a part to which the laser beam has been applied, and a plating layer is formed on a part to which laser beam has not been applied.

Abstract: A piezoelectric element includes a ceramic substrate, a piezoelectric ceramic composition composed mainly of a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition containing 0.05 to 10.0% by weight NiO, based on the ceramic composition. Electrodes are electrically connected to the piezoelectric. The piezoelectric is solidly attached to the ceramic substrate directly or via part of or all of the electrodes. The piezoelectric ceramic composition is represented by the following general formula: Pbx(Mgy/3Nb2/3)aTibZrcO3, wherein 0.95≦x≦1.05; 0.8≦y≦1.0; a, b and c are decimals falling in a range surrounded by (a,b,c)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200), and a+b+c=1.000.

Abstract: A pressure activated electrically conductive polymeric matrix material that is doped with particulate filler material. Electrical conductivity is pressure activated with a change in electrical resistance; specifically, with no pressure applied, the material is at a high resistance and with pressure the resistance is materially lower. Conductive fillers may be spherical or powder substrate, such as glass, graphite, etc., having plated thereon a metal coating which is electrically conductive and which is more thermally conductive than the substrate. The polymeric matrix materials may include polyurethane, silicone, and many other synthetic or natural rubbers.

Abstract: A method for producing a surface acoustic wave device, includes the steps of preparing a piezoelectric substrate, forming a thin film electrode on the piezoelectric substrate, etching the thin film electrode for forming an IDT, trimming at least one of the piezoelectric substrate and the IDT to adjust an operation frequency of the surface acoustic wave device, and rapidly altering the surface of the IDT for stabilizing the surface of the IDT.

Abstract: A drop-on-demand piezo-electric printhead has channel walls defined by piezo-electric material (10) with electrodes (26) along the length thereof. In portions of the channels which are open to an ink supply conduit, the piezo material is locally disabled, e.g. by reducing the width of the electrode or by interposing a material (40) of lower dielectric constant between the electrode and the piezo material. A lower capacitive load results.

Abstract: A piezoelectric element includes a ceramic substrate, a piezoelectric ceramic composition composed mainly of a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition containing 0.05 to 10.0% by weight NiO, based on the ceramic composition. Electrodes are electrically connected to the piezoelectric. The piezoelectric is solidly attached to the ceramic substrate directly or via part of or all of the electrodes. The piezoelectric ceramic composition is represented by the following general formula: Pbx(Mgy/3Nb2/3)aTibZrcO3, wherein 0.95≦x≦1.05; 0.8≦y≦1.0; a, b and c are decimals falling in a range surrounded by (a,b,c)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.425, 0.475), (0.100, 0.475, 0.425) and (0.375, 0.425, 0.200), and a+b+c=1.000.

Abstract: A degassed polyester varnish is applied to the transduction driver to increase surface dielectric strength (insulation resistance), driver voltage breakdown, physical protection, and heat and water resistance. A vacuum chamber application process is used to apply the polyester varnish. The disclosed coating technique is applicable to all transducer drive materials and all transducer types.

Abstract: The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.

Abstract: The invention relates to manufacturing electromechanical resonators for use in electromechanical filters. Such filters require resonators having different resonant frequencies. Typically all resonators are manufactured having the same resonant frequency and the resonant frequency of selected resonators is altered by the deposition of additional material on selected resonators in the form of additional layers. According to this invention, these layers are formed coextensive with the underlying layers of the resonator by first patterning larger areas of the added material, then masking the patterned areas with masks smaller than the patterned areas and etching both the underlying layer and the patterned area without moving the mask.

Abstract: The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.

Abstract: A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an &agr;-Al2O3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 &mgr;m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An &agr;-Al2O3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 &mgr;m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.

Abstract: A method of making a print head (100) includes forming a body (110) having a closed base (120) and independent fluid containment compartments (220) formed about the closed base (120). A substantially planar piezoelectric transducer (80) comprising a slab (60) of piezoelectric material provides a means of enclosing each of the independent fluid containment compartments (220). Each of the independent compartments has operably associated therewith one of a plurality of first electrodes (20) arranged on a first surface (62) of the slab (60) of piezoelectric material and a portion of a second electrode (22) arranged on an opposite second surface (64). By applying a voltage to the first and second surface electrodes (20, 22) in a predetermined manner induces an electric field in a portion of the slab (60) of piezoelectric material and thereby forces fluid composition through the independent fluid containment compartment (220).

Abstract: A surface acoustic wave device used as a branching filter and the like in, for example, a mobile communications field to handle high frequencies of about several GHz is manufacturable by forming a metal film on a wafer-like piezoelectric substrate and selectively removing the metal film to form comb-teeth-shaped metal electrodes. The metal film is partly formed in two or more film-forming modes involving different in-wafer-plane film-forming-velocity distributions, and the remaining part thereof is formed in a fixed film-forming mode. An in-wafer-plane film-thickness distribution of a part of the metal film is precisely controllable. Forming the remaining part of the metal film precisely controls the final thickness of the metal film.

Abstract: A system and method for treating, such as insulating, piezoelectric components, such as piezoelectric micro-actuators for use in magnetic hard disk drives is disclosed, different embodiments involving material dipping, spraying, pin application, and chemical vapor deposition.

Abstract: A method for manufacturing a piezoelectric element is disclosed. The method includes the steps of forming a lower electrode over a substrate, forming a piezoelectric luminous film over the lower electrode, forming an upper electrode over the piezoelectric film, forming a pressure luminous layer for emitting light upon application of pressure on the upper electrode, and attaching a substrate to the pressure luminous layer—has been inserted as a new abstract.

Abstract: A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.

Abstract: A method for producing the piezoelectric thin film is based on a sol-gel process and comprises the steps of: coating a substrate with a sol composition comprising a sol, of a metal component for constituting a piezoelectric film, and a polymer compound and then drying the coating to form a film; pre-sintering the film to form a porous thin film of gel comprising an amorphous metal oxide; pre-annealing the porous thin film of gel to convert the film to a film of a crystalline metal oxide; repeating the steps at least once to form laminated films of a crystalline metal oxide; and annealing the films thus prepared to grow crystal grains of perovskite type in the film into a larger size.

Abstract: A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.

Abstract: An ink-jet head, comprises an ink chamber in which ink is stored; a piezoelectric element to jet the ink from the ink chamber; an electrode to apply an electric voltage onto the piezoelectric element; and a layer provided on the electrode by an electrodeposition method. The layer is subjected to a process to change a surface energy.

Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si3N4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment, the electrodes are deposited by a method that minimizes the stress in the electrodes.

Abstract: The present invention relates a manufacturing method for a multilayered piezoelectric/electrostrictive ceramic actuator by a sintering process at low temperature. The present invention makes feasible a high quality image and high speed printing, as large displacement and high speed actuation are feasible because it can get greater displacement and driving speed, even with small variation in driving voltage, because of piezoelectric/electrostrictive layer and upper electrode being alternately heaped to produce a multilayer structure.

Abstract: Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.

Abstract: An automated system for dip coating a superconducting material on a substrate is disclosed. The system includes an actuator, a pick up station, a dip coating station that comprises a reservoir of a dip coating formulation, a drying station that includes a source of heated air and a conveyor for moving the actuator from the pick up station to the dip coating station and from the dip coating station to the drying station. The actuator includes an arm for carrying a substrate. The arm is capable of being moved vertically downward to submerse the substrate in the dip coating reservoir and the arm is also capable of being moved vertically upward to lift the substrate out of the dip coating reservoir. A method for automatically dip coating a substrate with a superconducting material is also disclosed.

Abstract: A method for producing an apparatus for ejecting liquid droplets includes the steps of providing a porous medium having a plurality of pores therein, forming a plurality of holes through the porous medium and assembling with the porous medium a plurality of transducers and nozzles. At least some of the plurality of pores are in the porous medium, and enable a liquid to flow into a liquid cavity prior to the liquid droplet ejection. Each transducer corresponds to a corresponding liquid cavity, a corresponding nozzle and a corresponding hole, generally disposed along the same axis. Each transducer is operative to eject liquid droplets through the corresponding nozzle via the corresponding hole.

Abstract: A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

Abstract: A novel compound shown by M[N(OC2H5)5(OC2H4OCH3)]2, wherein M represents Sr or Ba, N represents Nb or Ta, which is a liquid at room temperature, is hard to be thermally dissociated, and has a vapor pressure of about 0.2 Torr at 190° C. The compound is produced by reacting 2 moles of N(OC2H5)5 and from 1 to 1.1 moles of M(OC2H4OCH3)2 and then recovering the product by distillation. By using the compounds as raw materials for a CVD method, an SrBi2Ta2O9 thin film or a (Sr0.75Ba0.25)Nb2O6 thin film for semiconductor devices can be produced.

Abstract: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

Abstract: A method for splitting a piezoelectric device used in substitution for dicing for shortening the processing time as compared to a case of using the dicing to improve productivity to enable the shape of the piezoelectric device more suited to the emission shape of a solution to be achieved, and a method for manufacturing a printer device whereby a narrower nozzle pitch may be achieved. A resist 201 is formed at a pre-set position on a major surface of the piezoelectric device 43 bonded to a vibrating plate. Using this resist 201 as a mask, powders or particles are sprayed onto the piezoelectric device 43 for removing the portion of the piezoelectric device 43 not carrying the resist 201 to form the piezoelectric device 35 of a desired shape at a pre-set position.

Abstract: A method of making a SAW component has electrically conductive structures on a substrate. A cap cover encapsulates and seals the structures against environmental influences. An RF shield is placed on the cap cover. The RF shield is a metallization formed of a material layer sequence of TiW, Cu or Ni and Au which is then reinforced with current-less or galvanic deposition.

Abstract: An apparatus for curing silicone rubber is constructed so as to perform a heating process and a curing process in a very short time without degradation of characteristics in piezoelectric elements so as to improve productivity. A piezoelectric component having uncured silicone rubber coated on the external peripheral surface thereof is held in a jig having a property of reflecting far infrared rays. The uncured silicone rubber coated on the external peripheral surface of the piezoelectric component is irradiated with far infrared rays by a far infrared panel heater so as to cure the silicone rubber.

Abstract: The invention described is a method of forming an improved dielectric material by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased.

Abstract: Disclosed is a method for fabricating a piezoelectric/electrostrictive thick film, using a seeding layer. On a substrate is formed the seeding layer which is prepared from a ceramic sol solution or a ceramic paste, both identical or similar in composition to the piezoelectric/electrostrictive film. The ceramic paste is prepared from a mixture of a ceramic oxide powder, which has a particle size of 5 &mgr;m or less and is prepared from Pb and Ti-based piezoelectric/electrostrictive elements by a non-explosive oxidation-reduction combustion reaction at 100-500° C., and a ceramic sol solution in water or an organic solvent, identical or similar in composition to the ceramic oxide powder. Then, the seeding layer is subjected to an after-treatment. A piezoelectric/electrostrictive film is directly formed on the seeding layer. Alternatively, a piezoelectric/electrostrictive film, separately formed and sintered, is attached on the seeding layer.

Abstract: A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.

Abstract: A piezoelectric actuator, comprising a stacked structure consisting of a top electrode 5, a piezoelectric film 4, and a bottom electrode 3, wherein the piezoelectric film comprises a first group 42 of piezoelectric ceramic particles and a second group 43 of piezoelectric ceramic particles. A distinctive feature is that the particles constituting the first group of piezoelectric ceramic particles are larger than the jingo particles constituting the second group of piezoelectric ceramic particles, and the first group of piezoelectric ceramic particles and the second group of piezoelectric ceramic particles have mutually different compositions. The piezoelectric actuator can thus be manufactured by an application method in a low-temperature environment, and a thicker piezoelectric film can be obtained. In addition, a highly practical piezoelectric film can be provided by combining the advantages of a plurality of material types.

Abstract: An interdigital electrode of a SAW device is protected by a protective layer during a photo-lithography etching process which is used to apply a bonding pad. As the bonding pad can be formed by the photo-lithography etching process, it is possible to obtain regularly shaped bonding pads without damaging the characteristics of the SAW device.

Abstract: A method of applying a matching layer to a transducer includes placing the transducer on a fixture and covering the transducer with a stencil so that an opening in the stencil allows access to a metal-coated, piezoelectric surface of the transducer, and so that the stencil is affixed to the transducer surface. A roughly cylindrically shaped bead of epoxy is extruded onto the stencil at a predetermined distance from the opening, and a blade is positioned upstanding relative to the transducer surface and located so that the bead lies between the blade and the opening. The fixture is moved laterally so that the blade rolls the bead across the exposed transducer surface to form a layer of epoxy thereon. The fixture can then be moved back in the opposite direction to its initial position if desired. The assembly can also be subjected to a vacuum before the fixture is returned to its initial position. If desired, the fixture can be designed to vibrate during movement.

Abstract: The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including the steps of performing a first thin epitaxial deposition, then an anneal; the conditions and the duration of the first epitaxial deposition and of the anneal being such that the arsenic diffusion length is much lower than the thickness of the layer formed in the first deposition; and performing a second epitaxial deposition for a chosen duration to obtain a desired total thickness.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Abstract: A method of making a micro-mirror light beam switch having a thin flexible movable support member for supporting a thin central reflective mirror surface thereon and for supporting a plurality of thin unimorph piezoelectric cantilevered mirror actuators mechanically coupled between a fixed substrate and movable hinging portions of the thin movable support member. The method employs thin film deposition techniques and photolithography for readily forming the extremely thin switch, whereby the components thereof are substantially co-planar for precisely controlled, multi-axial micro-mirror motion and low voltage operation necessary for the rapid switching of optical traffic from fiber to fiber in the next-generation optical networks.

Abstract: A method of making a print head (100) includes forming a body (110) having a closed base (120) and independent fluid containment compartments (220) formed about the closed base (120). A substantially planar piezoelectric transducer (80) comprising a slab (60) of piezoelectric material provides a means of enclosing each of the independent fluid containment compartments (220). Each of the independent compartments has operably associated therewith one of a plurality of first electrodes (20) arranged on a first surface (62) of the slab (60) of piezoelectric material and a portion of a second electrode (22) arranged on an opposite second surface (64). By applying a voltage to the first and second surface electrodes (20, 22) in a predetermined manner induces an electric field in a portion of the slab (60) of piezoelectric material and thereby forces fluid composition through the independent fluid containment compartment (220).

Abstract: A method of manufacturing a surface acoustic wave apparatus including the steps of forming a first conductive film, depositing a first resist on the first conductive film and patterning the first resist, dry-etching the first conductive film using the patterned first resist to form IDT electrodes, a short-circuit wiring electrode for establishing electrical connection between IDT electrodes, and a second conductive film provided where the second surface acoustic wave device is constructed, removing the second conductive film, depositing a second resist and heating the second resist, patterning the second resist on the electrodes, forming a second conductive film having a thickness which is different from the first conductive film, removing the second resist to form the electrodes of the second surface acoustic wave device and to expose the electrodes of the first surface acoustic wave device, and disconnecting the short-circuit wiring electrode.

Abstract: A piezoelectric paste which is used for forming a piezoelectric thick film by the thick film forming technique, which can be burned at a relative low temperature and which can form a piezoelectric film having good polarizability and high piezoelectricity while maintaining the ferroelectricity possessed by a piezoelectric crystal powder contained in the piezoelectric paste contains the piezoelectric crystal powder containing a Pb(Zr, Ti)O3 system ceramic, a crystallized glass powder and an organic vehicle, wherein the crystallized glass powder used precipitates a Pb(Zr, Ti)O3 system solid solution phase by heat treatment.

Abstract: A method of making a printing apparatus configured for drawing fluid from a fluid reservoir and then ejecting droplets of fluid onto a receiver to form an image include the steps of providing an orifice manifold having a plurality of orifices each one of which in fluid communications with one of a plurality of piezoelectric pumps.

Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

Abstract: A ferroelectric element comprising a ferroelectric material containing at least two metals, the ferroelectric element having been produced by a process including a sol-gel process in the presence of a thickener and/or an association preventive from aqueous solutions of respective salts of the metals. The ferroelectric element is advantageous in that the handling of starting compounds and the production of the ferroelectric element are easy, the storage stability of the starting compound solution is good, the cost is low, the ferroelectric element can be formed as a thin layer, particles on the surface of the thin layer are fine and dense, and, hence, the surface smoothness is good. The ferroelectric element is excellent also in piezoelectric properties and therefore can be advantageously used as a piezoelectric element in a piezoelectric ink jet head.

Abstract: A manufacturing method for a multilayered piezoelectric/electrostrictive ceramic actuator by sintering process at low temperature, making feasible a high quality image and high speed printing, as large displacement and high speed actuation are feasible because it can get greater displacement and driving speed, even with small variation in driving voltage, because of piezoelectric/electrostrictive layer and upper electrode being alternately heaped to produce a multilayer structure.

Abstract: A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.

Abstract: A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.

Abstract: A process for producing a laminated ink-jet recording head including the steps of forming a titanium layer across a surface of a diaphragm, and forming a layer of a piezoelectric material on the titanium layer by a hydrothermal method.