Abstract: A method of forming thick film resistor circuits whereby non-noble metals (11, 12) requiring a reducing firing atmosphere are included with resistor material (13) requiring an oxidizing atmosphere. The conductor metallization is capable of adhering to the substrate at a low firing temperature in air. The resistors are printed and fired in air after conductor formation. The metal oxide can then be reduced at a sufficiently low temperature so as not to significantly affect the resistor material. In one embodiment, the conductor paste includes copper and glass frits which can adhere to a ceramic substrate by firing at a temperature of less than 1100 degrees C.

Abstract: Method for manufacturing a ceramic electronic component such as a voltage-dependent non-linear resistor element and a semiconductive ceramic capacitor is disclosed, in which a precisely uniform metal coating is formed on a surface of a ceramic and the metal coating is then heat treated to convert the metal of the metal coating to a metal compound to form a metal compound coating on the surface of the ceramic and/or diffuse a portion of or all of the metal coating into the ceramic, for attaining completely different electric properties than those of untreated ceramic. The present method is particularly useful in the application to a semiconductive ceramic capacitor.

Abstract: A temperature sensitive electrical element and method of making the same comprising the steps of applying to the surface of a substrate and firing a mixture of glass frit and particles of titanium dioxide (TiO.sub.2), and titanium metal. The mixture is fired in a non oxidizing, inert, or reducing atmosphere at a temperature which softens of the glass frit. When cooled, an element is provided with a glass film strongly bonded to the substrate and having dispersed therein conductive particles mainly of titanium oxide (Ti.sub.2 O.sub.3). The element produced can be terminated by the use of electroless plating and provides a substantially linear resistance to temperature characteristic and a relatively high temperature coefficient of resistance.

Abstract: A vitreous enamel resistor, and method of making the same comprising the steps of applying to the surface of a substrate and firing a mixture of glass frit and particles of a precious metal oxide such as iridium oxide, ruthenium oxide, and mixtures thereof. The mixture is fired in a neutral, inert, or reducing atmosphere for a time and at a temperature resulting in a controlled partial dissociation of the oxide and softening of the glass frit. When cooled, a resistor is provided having a glass film with conductive particles therein strongly bonded to the substrate. The resistor produced can be terminated by the use of electroless plating.

Abstract: A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.

Abstract: A matrix of discrete spaced electrical components (which may be individual components or networks, for example) in fixed array on a substrate wafer, each component being connected to terminal conductor pads on the opposite surface of the substrate by thick film conductor strips that extend along the walls of apertures in the wafer.

Abstract: Disclosed is a glass bonded electrical resistor element and composition composed of glass binder, refractory material to provide form stability during firing and electric conductivity imparting materials of noble metal and noble metal oxides. Manganese may also be present. Oxides of Ru and Ir are disclosed as being significant.

Abstract: Internally plasticized phenolic resins suitable for use in preparing laminates and the like excellent in electrical properties, heat resistance, solvent resistance as well as punchability are produced by reacting a compound of the formula: ##STR1## wherein R.sub.1 is an alkylene residue having 1 to 3 carbon atoms; and R.sub.2 and R.sub.3 are independently hydrogen or a saturated or unsaturated hydrocarbon group having 1 to 3 carbon atoms, with an epoxidized vegetable oil with heating in the presence of one or more secondary and/or tertiary amines, and adding formaldehyde or one or more phenols and formaldehyde to the reaction system to further proceed the reaction.

Abstract: High stability thin film resistors are made from an alloy comprising selected portions of nickel, chromium, and gold selected in a ratio to provide the desired temperature coefficient of resistance (TCR). The resistors are made by co-depositing gold with the nickel chromium alloy by a flash evaporation process. The evaporation process is carried out by feeding a nickel chromium wire, having a gold wire extending therealong to provide the desired composition, onto a heated tungsten strip within a vacuum system with substrates disposed in a position to obtain uniform deposition of the evaporated material thereon.

Abstract: A gas composition detector, particularly an oxygen concentration detector includes a metal oxide an electrical resistance or an electromotive force of which is changed by oxygen ions which are conducted in accordance with a difference between an oxygen concentration of gas being examined and an oxygen concentration of a reference gas. A surface of the metal oxide is coated with a conductive metal electrode, and a metal which is the same as or different than the conductive metal penetrates into the metal oxide at the interface of the metal oxide and the conductive metal, whereby the tear-off of the electrode is prevented.

Abstract: A process is described for forming a plurality of polysilicon runs on the surface of a semiconductor substrate, such as a silicon substrate, at least one of the polysilicon runs having a resistor portion formed therein, and at least one of the polysilicon runs forming the conductive gate electrode of a self-aligned insulated silicon gate field effect device.

Abstract: A vitreous enamel resistor material comprising a mixture of a glass frit, and fine particles of tin oxide (SnO.sub.2), a primary additive of particles of oxides of manganese, nickel, cobalt or zinc, and a supplemental additive of oxides of tantalum, niobium, tungsten or nickel. An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. The tin oxide may be heat treated prior to mixing the glass frit. Upon cooling, the substrate has on the surface thereof, a film of the glass having the particles of the mixture embedded therein and dispersed therethroughout. The resistor material provides a resistor having a wide range of resistivities and a low temperature coefficient of resistance.

Abstract: A vitreous enamel resistor material comprising a mixture of a vitreous glass frit and fine particles of tantalum. The vitreous enamel resistor material may also include fine particles selected from titanium, boron, tantalum oxide (Ta.sub.2 O.sub.5), titanium oxide (TiO), barium oxide (BaO.sub.2), zirconium dioxide (ZrO.sub.2), tungsten trioxide (WO.sub.3), tantalum nitride (Ta.sub.2 N), titanium nitride (TiN), molybdenum disilicide (MoSi.sub.2), and magnesium silicate MgSiO.sub.3). An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. Upon cooling, the substrate has on a surface thereof a film of glass having the tantalum particles and particles of the additive material, if used, embedded therein and dispersed therethroughout.

Abstract: A method of making an electric resistor having a negative temperature coefficient of resistance whose resistance body consists of p-type doped pyrolytic polycrystalline cubic silicon carbide.

Abstract: Novel organic heat-sensitive semiconductive materials containing tetracyanoquinodimethane (TCNQ) as electron acceptor and exhibiting inherent resistivity-temperature characteristics. The materials include (N-n-propylthiazolium).sup.+ (TCNQ).sup.- (TCNQ), (N-n-butylthiazolium).sup.+ (TCNQ).sup.- (TCNQ) and(N-n-butyl pyridinium).sup.+ (TCNQ).sup.- (TCNQ). These three compounds can be prepared by reacting TCNQ with iodides of corresponding cations, respectively. The heat-sensitive materials have particular utility in the field of timing or heat-sensitive elements.

Abstract: Sinterless zinc oxide varistor devices are prepared in one embodiment by flame spraying premixed zinc oxide and additive metal oxide powders onto a refractory substrate. The coated substrate is then treated by an abrasive removal process to form a trimmable resistor. A further embodiment comprises the use of a plasma spray process wherein carbonates and nitrates of the varistor constituents are oxidized in situ by entrainment within an oxygen gas stream and directing the plasma upon a rotating substrate. Ultra pure zinc oxide varistor devices having excellent electrical properties can be prepared in this manner.

Abstract: This disclosure relates to a low power write-once, read-only semiconductor memory (PROM or programmable read only memory) array wherein the semiconductor resistors located in the word line decoder and driver and also in the bit line decoder and sense amplifier of the memory array are fabricated to have a high resistivity thereby permitting the semiconductor array to operate with much lower power. The high resistivity semiconductor resistors of this write-once, read-only semiconductor memory array are fabricated using an ion implantation step, preferably, between the base and emitter diffusion process steps in fabricating the NPN transistor structures used in the bit line and word line decoders of the memory array. The high resistivity ion implanted resistor regions are preferably shallow, boron implanted regions that are formed by ion implanting through a thin silicon dioxide layer. Various resistor devices are disclosed using shallow, boron implanted, high resistivity regions.

Abstract: A ballasted finger electrode structure is fabricated on a substrate by the steps of depositing on the substrate a layer of resistive material, forming one or more dielectric regions on the resistive layer; and forming two or more finger electrode segments spaced apart over one or more of the dielectric regions but electrically connected by the resistive region underlying the dielectric region. The result is a finger electrode structure with a precisely defined length of resistive ballasting.

Abstract: A glass-free thick film varistor operable at operating voltages ranging from about 30 to 200 volts per mm of active varistor material is produced by providing a screen-printable paste comprised of a non-glass containing substantially homogeneous mixture of granular varistor materials which have ZnO as the main component thereof and an organic binder, applying such paste in a desired pattern onto an insulating substrate and sintering such applied paste at relatively high temperatures so as to convert the paste into thick film varistors.

Abstract: An electrode for a spark discharge in a distributor is surface treated by using a spray coating process so as to provide the electrode with a surface layer of an electrically high resistive material, e.g. CuO, which surface layer further includes a predetermined percentage of refractory and electrical insulating material, e.g. Al.sub.2 O.sub.3, SiO.sub.2 or MgO.multidot.Al.sub.2 O.sub.3. A distributor having one such treated electrode for the distributor rotor and/or such treated electrodes for stationary terminals can exhibit stably-suppressed noise for over a long period of time.

Abstract: A vitreous enamel resistor material comprising a mixture of vitreous glass frit and fine particles of a mixture of zinc oxide (ZnO) and a material which will provide either lithium, tin, nickel, aluminum, indium, titanium, tantalum, zinc, gallium, vanadium, tungsten, or molybdenum. An electrical resistor is made from the resistor material by applying the material to a substrate and firing the coated substrate to a temperature at which the glass melts. Upon cooling, the substrate has on a surface thereof a film of glass having the particles of the mixture embedded therein and dispersed therethroughout. The resistor material provides a resistor having a wide range of resistivities with a low temperature coefficient of resistance and a low voltage coefficient of resistance.

Abstract: A material for a vitreous enamel electrical resistor includes a mixture of a glass frit and particles of nickel, iron and cobalt. The material is applied to a substrate and fired to melt the glass frit, and then cooled to form a layer of the glass with particles of an alloy of nickel, iron and cobalt embedded therein. The material provides a resistor having a high temperature coefficient of resistance and which can be self terminating.

Abstract: High stability thin film resistors are made from an alloy comprising selected portions of nickel, chromium, and gold selected in a ratio to provide the desired temperature coefficient of resistance (TCR). The resistors are made by co-depositing gold with the nickel chromium alloy by a flash evaporation process. The evaporation process is carried out by feeding a nickel chromium wire, having a gold wire extending therealong to provide the desired composition, onto a heated tungsten strip within a vacuum system with substrates disposed in a position to obtain uniform deposition of the evaporated material thereon.

Abstract: A method of manufacturing a resistor element for fixed or variable resistors. The element comprises an insulating substrate injection molded from ceramic-glass frit material and organic binder and lubricating material and layers of resistive material and conducting termination material deposited on the unfired substrate. The organic materials in the substrate and its termination and resistive layers are substantially "burned out" prior to simultaneously co-firing the substrate and the deposited resistive and termination layers.The fixed resistor element may be molded as a half-shell arranged to receive leads extending from opposite ends thereof and attached by soldering to the termination areas. A substantially identical cover member molded and fired from the same material as the substrate is adhesively attached to the substrate to complete the resistor.

Abstract: A thin film resistor is produced by forming a film of tantalum pentoxide on part of a pattern of tantalum nitride, simultaneously forming an electroconductor and an electrode on other part, where no film of tantalum pentoxide is formed, by means of a metal cheaper than gold, and heating the pattern in an inert gas atmosphere.

Abstract: An electrical resistor element and method of manufacturing the same. The element may comprise a fixed resistor or may be the resistive and collector component of a variable resistor. In either case, the element comprises, at least as a portion thereof, a substrate comprising an insulating substrate injection molded from ceramic-glass frit material and organic binder and lubricating material. A layer of resistive material and a layer of conducting termination material are each deposited on the unfired substrate. The organic materials in the substrate and its termination and resistive layers are substantially "burned out" prior to simultaneously co-firing the substrate and the deposited resistive and termination layers.In the case of fixed resistors, the element may be molded as a half-shell arranged to receive leads extending from opposite ends of the half-shell molding and attached by soldering or other means to the termination areas.

Abstract: A process of film resistor laser trimming. The process involves coating a resistor prior to trimming with a removable insulative material which absorbs and traps trimming debris, thus minimizing or preventing deposition of same on the trimmed resistor surface. Formation of conductive paths otherwise created over the surface of the resistor by the trimming debris is precluded thereby, thus enabling greater accuracy with respect to trimmed resistor measurement. The coating used is a composition of phenyl polysiloxane with silica dispersed therein.

Abstract: A vitreous enamel resistor material which includes a mixture of fine particles of tungsten carbide, tungsten trioxide and a glass frit. The resistor material may also include fine particles of tungsten. The resistor material is made into a resistor by coating the mixture on a substrate, firing the coating at a temperature at which the glass frit melts, and then cooling the coated substrate to form the resistor having a layer of glass with the particles dispersed therein.

Abstract: A ceramic electric resistor and a method for making the same. The resistor has a body which is formed of a material having a Perovskite structure with semiconducting doping and on its surface is contacted with two layers of different materials. The first layer is palladium or in association with palladium chloride and the second layer is one from a group of nickel, nickel-phosphorus or nickel-boron alloys. The process includes stoving-in the palladium or palladium chloride solution and providing a given composition of nickel bath for the second layer.

Abstract: A cermet resistor employs film terminations of sub-micron thickness. The terminations contain particles of SiO.sub.2 or MnO.sub.2 that may be conveniently made by mixing such particles in a metal resinate paste, screening the paste on a glazed or unglazed substrate and firing. A glass containing resistor paste is screened in overlapping relationship with the fired terminations and is itself fired. The particle additives ameliorate cracking of the terminations at resistor firing and enhance the termination to substrate bond.

Abstract: A substrate, such as a ceramic body, carries a layer of glaze consisting essentially of (a) an inorganic oxide glass matrix that is essentially free from ions which migrate in a high-electric field, (b) about 1 .times. 10.sup.19 to 50 .times. 10.sup.19 antimony cations distributed in each cubic centimeter of the glass matrix, and (c) about 4 to 30 weight percent with respect to the weight of said glaze of discrete tin-oxide particles in the antimony-containing glass matrix. The method comprises dissolving antimony, as a compound thereof, in a glass, mixing together particles of said glass and tin-oxide particles, coating the mixture on a substrate, heating the coated substrate to melt the glass particles while retaining tin oxide in discrete particulate form, and then solidifying the molten coating.

Abstract: Thick film resistive elements are prepared from an intimate admixture comprising silica, lead oxide and ruthenium dioxide or iridium dioxide which is heated to a temperature sufficient to provide a lead-containing glass having dispersed therein lead ruthenate or lead iridate. The lead-containing glass is comminuted and a resistor paste is formed which can be subsequently coated and fired on to a desired substrate to form the thick film resistive component. The method of this invention may facilitate the production of thick film resistors exhibiting a low temperature coefficient of resistivity, relative freedom from noise and drift, and high moisture resistance.

Abstract: A method of making a copper thick film conductor paste which includes the step of preoxidizing a controlled amount of the copper powder particles. A copper thick film conductor paste, and an electrical conductor element and a method of making it from the paste.

Abstract: A catalytic combustion-type, gas sensing, resistive element and the method of making it by forming an electrical conductor, whose electrical resistance varies with temperature, into a helical coil, coating the coil with a refractory material whose coating matures at a temperature in the range of 1200.degree. C to 1400.degree. C, and heating the coated coil at that temperature range until the coating matures and shrinks into a dense, gas-tight sheath about the helical coil. The coating on the helical coil is integral between adjacent loops and there is a hollow space along the longitudinal axis of the coil. The exterior of the sheath coating may then be further coated with a catalyst, catalytic wash coating, or in some embodiments the hollow space is filled with a porous catalytic material such as platinum and the ends of the hollow space are capped with a porous refractory ceramic material.

Abstract: There is provided a voltage-dependent resistor comprising a bulk consisting essentially of zinc oxide as the major part and as additives 0.01 to 10 mol % of Bi.sub.2 O.sub.3, CoO, MnO, TiO and NiO and electrodes on the bulk, said electrodes having been formed by baking a silver paste comprising silver powder and a glass frit on the bulk, said glass frit containing as its principal content 80 to 95% by weight of Bi.sub.2 O.sub.3 and correspondingly 20 to 5% by weight of SiO.sub.2, said glass frit also containing 1 to 5 parts by weight of B.sub.2 O.sub.3 for 100 parts of said principal content. The electrodes can also contain minor amounts of CoO, Sb.sub.2 O.sub.3, a mixture of Sb.sub.2 O.sub.3 with Ag.sub.2 O or MgO, or a mixture of CoO with MgO or Ag.sub.2 O.

Abstract: A process is described for producing a composite metal film in which metalliferous particles and polymer particles are co-deposited on a substrate, the proportion of metalliferous particles being such that the metal film is discontinuous, the metal particles being present in the form of islands with intervening zones of polymeric material. The resulting composite films have negative temperature coefficient of resistance. The process may be applied to the production of semiconductor composite films, e.g., copper oxide films by means of an annealing oxidative treatment to convert metal to metal oxide before loss of polymeric matrix by oxidation or evaporation.

Abstract: Process for forming a vitreous enamel electrical resistor coating on a substrate, said vitreous enamel containing an electrically conductive species as a crystalline phase and having a temperature coefficient of resistance, as measured in the temperature range of 20.degree. to 120.degree. C, of from -500 to +500 ppm/.degree. C, comprises applying to said substrate a paste comprising (1) an organic medium, (2) a powdered aluminoborate glass containing dissolved molybdenum trioxide, tungsten trioxide, cerium dioxide, manganese dioxide or ferric oxide in an amount of 2 to 30 mol percent of the total constituent oxides of the glass and (3) powdered boron, silicon, molybdenum disilicide or tungsten disilicide in an amount of 0.25 to 30 percent by weight based on the total weight of components (2) and (3) and firing the paste on the substrate at a temperature of about 600.degree. to 900.degree. C to form a vitreous enamel. The coated substrates are particularly useful in thick film printed and fired circuits.

Abstract: A vitreous enamel resistance material comprising a mixture of a vitreous glass frit and fine particles of a metal silicide of the transition elements of Groups IV, V and VI of the periodic chart. The metal silicide may be of molybdenum disilicide (MoSi.sub.2), tungsten disilicide (WSi.sub.2), vanadium disilicide (VSi.sub.2), titanium disilicide (TiSi.sub.2), zirconium disilicide (ZrSi.sub.2), chromium disilicide (CrSi.sub.2) or tantalum disilicide (TaSi.sub.2). The ingredients of the vitreous enamel resistance material are present in the proportion of, by weight, 25 to 90% glass frit and 75 to 10% metal silicide. An electrical resistor is made with the vitreous enamel resistor material of the present invention by coating a ceramic substrate with the vitreous enamel resistance material and firing the coated substrate at a temperature sufficient to melt the glass frit of the vitreous enamel resistance material.

Abstract: A fusible metal film resistor comprising a substrate of an electrically insulating material and a resistive film formed on the substrate, which consists of nickel, 4 to 12 weight % of phosphorus and 0.05 to 10 weight % of at least one additive metal of iron, tin, manganese and bismuth, has a stable and small temperature coefficient of resistance suitable as a precision resistor at a normal load and disconnects easily and rapidly at abnormal overload due to a rapid decrease of resistance at a high temperature which leads to fusion of the film as a result of heat generated by increased current.

Abstract: A method of making a zinc sulphide ceramic body having a low electrical resistance characterized by sulphurizing a starting oxide material consisting essentially of zinc oxide and from 0.01 atomic % to 6.0 atomic % of at least one oxide of a metal selected from the group consisting of aluminum, magnesium, nickel, cobalt, cadmium, lead, indium, bismuth, antimony, titanium, zirconium, silicon, tin, niobium, tantalum, tungsten, and the rare earth element metals in a carbon disulphide atmosphere at a temperature in the range of 700.degree. C to 1000.degree. C. This zinc sulphide ceramic body can be formed into non-linear elements such as phosphors, photoconductors, luminescent elements, varistors, piezoelectric transducers, capacitors and combinations thereof. Particularly, by using this zinc sulphide body in light emitting elements, the luminous efficiency as well as the working voltage can be improved.

Abstract: A technique for the fabrication of hybrid integrated circuitry combining the expedients of thick and thin film technology is described. A novel processing sequence for attaining ohmic contact between thick film resistors and thin film conductive metallization involves the use of an interphase gold tab as a conductive link.

Abstract: An electric heater plate is disclosed comprising a sheet of tempered glass with a metallized aluminum circuit extending over the face thereof for carrying an electrical heating current. At the terminals of the metallized aluminum circuit there is provided a terminal area of silver between the glass and the metallized aluminum coating, which silver terminals are each exposed through a small opening in the metallized aluminum coating such that lead wires may be soldered to the silver through said openings.

Abstract: An apparatus for controlling the electrical resistance in a moving electrical conductor during its production. The apparatus including means for conducting a current along a predetermined constant length of the thermally cured conductor, means for measuring the voltage across the predetermined length, means for comparing the voltage drop with the desired voltage drop and means for varying the extent of thermal curing of the conductor when the voltage drop measured varies from that desired. There is also provided a tension control device for the conductor in the apparatus.

Abstract: A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.

Abstract: A low resistance indium oxide conductive film is made on a substrate in an atmosphere for vacuum evaporation or sputtering where aqueous vapor or gas mixed with the vapor is introduced or wherein aqueous vapor is generated, by reactive vacuum evaporation or sputtering in said atmosphere using indium oxide or metallic indium as starting material.

Abstract: A method of heat-treating a metal film for use as a resistor and the resulting product. The method involves heating the film in an oxidizing atmosphere for forming a protective oxide film on the metal film, removing adsorbed foreign elements therefrom, and changing the crystal structure thereof, and for a time sufficient to change the initial temperature coefficient of resistance to a desired value. The temperature for the heating when the coefficient is to be changed in the positive direction is a temperature in the range between the first and second critical temperature for heat treating in and above the third critical temperature. When the coefficient is to be changed in the negative direction, the temperature is between the second and the third critical temperatures for heat treating in air.

Abstract: A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

Abstract: A glass material is deposited upon a ceramic substrate and then fired at an elevated temperature in air. Screen printed resistor elements formed on the glass material are fired, lapped, and annealed.

Abstract: In a noble-metal containing resistor paste, there is added a quantity of colloidal aluminum oxide hydroxide (AlOOH) in order to make an upward adjustment in the TCR of the fired resistor film. The additions of AlOOH have only a small effect on the resistivity and usually causes a downward change in the resistivity value.

Abstract: The invention relates to a method of aluminizing the inside of the panel of a television picture tube. When aluminizing the inside of the panel, blisters caused by the vaporizing lacquer, are likely to develop in the layer of aluminum, especially on the side walls of the panel portion. When taking care in accordance with the invention, that the coat of lacquer is roughened prior to the performance of the aluminizing process, these blisters are avoided.