Abstract: A thin film resistor is formed using sputtering to deposit a thin film of resistive material on an insulating surface. The sputter target is composed of constituents which are normally present in relatively large quantities in thin film resistors, such as chromium silicide and silicon carbide. The sputtered thin film material is formed into resistor regions. An insulating layer is deposited over the thin film material. Ions (e.g., boron ions) are then implanted into the thin film through the insulating layer. These implanted constituents have a significant effect on the temperature coefficient and sheet resistance of the thin film resistor. Ion implantation of these constituents enables more control over the characteristics of the thin film resistor as compared to prior art techniques not using ion implantation.

Abstract: A first conductor layer made of a thick film conductor is formed with a predetermined pattern on a substrate. A thick film resistor is then formed to be connected to the first conductor layer. An insulating layer made of a polyimide resin is formed over the substrate, the first conductor layer and the thick film resistor with through holes on the first conductor layer. Then, plating is applied to the whole surface of the insulating layer, the wall surfaces of the through holes and the exposed portions of the first conductor layer and etching is applied thereto with a predetermined pattern so that a second conductor layer is formed.

Abstract: A high stability, high resistance metal film resistor having layered metallic films deposited and annealed such that one layer has a positive TCR and a negative TCR Slope, while a second layer has a negative TCR and a positive TCR Slope, thereby yielding a resistive film having TCR and a TCR Slope approaching zero.

Abstract: A method for forming a plurality of electrically conductive circuits of at least four laminations on a single base board having copper laminations attached on both sides thereof, for example, wherein the base board is processed to provide a through-hole therein, subjected to a catalyst treatment, etched to provide a plurality of circuits of a first lamination, effectively processed with a plating-resistant resist and an electrically conductive copper paste to provide a circuit of a second lamination on the circuits of the first lamination by making a pre-plating treatment and a subsequent chemical treatment applied to the copper paste.

Abstract: In one embodiment of the present invention a thick film resistor structure comprising common materials is disclosed. The structure includes a supporting carrier as a base for the thick film resistor arrangement, which comprises a resistive material printed on the carrier, first and second noble metal terminating layers connected to either side of the resistive material, first and second barrier layers respectively connected to the first and second noble metal terminating layers, and first and second conducting layers respectively connected to said first and second barrier layers. The barrier layers are preferably composed of nickel or tungsten, whereas the noble metal terminating layers are preferably composed of silver. The resistive material, being formed between the terminating layers, is electrically connected to said copper conducting layers to form a precise thick film resistor structure whose resistance is measurable between said conducting layers.

Abstract: A heated automobile backlight having a dark colored electroconductive grid. The composition includes silver powder, a glass frit such a lead borosilicate frit, and reducing agents such as stannous sulfate and chromic oxide.

Abstract: This method of making an implanted resistor comprises the steps of implanting the resistor with ordinary techniques and deposition over the implanted resistor of a polysilicon layer having a set thickness and fully covering the resistor. Thus, the resulting resistor is unaffected by any subsequent thermal treatments and its value remains constant irrespective of any high potential metal layers or connections crossing it. The method affords in particular resistive values of the order of 1 kOhms/square.

Abstract: A method is described for producing multilayer circuits including a resistor circuit on one side of a copper laminated base board, wherein the base board is etched to provide a plurality of circuits of a first layer, effectively processed with a plating-resistant resist and an electrically conductive copper paste to form a plurality of circuits of a second layer, immersed in a metal plating solution to provide a metal plating layer on the copper paste to thereby form the circuits of the second layer on the circuits of the first layer, coated with an electrically conductive paste to provide a pair of electric terminals between two of the circuits of the second layer, and coated with an electrically resistant resist of a predetermined electric resistance value on a part extended between the two electric terminals.

Abstract: A roughened surface is formed on an insulating ceramics substrate having an electrode pattern by bonding or partially thrusting ceramics particles to or in the substrate, and a gas-sensitive metal oxide thick film is firmly bonded to the roughened surface.

Abstract: A panel heating element comprising (a) a metal substrate, (b) an aluminum boron-silicate insulating glass which forms a coating on the metal substrate, (c) one or more metallic resistance tracks applied to the substrate and (d) a mixture of a zirconium phosphate glass and a boron-titanium enamel which is applied as a layer over the metallic resistance tracks.

Abstract: A paste composed of Li.sub.2 CO.sub.3, SiO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3 is coated and baked on a side surface of a sintered ZnO based nonlinear voltage dependent resistor body to form a high resistance side surface for improving a impulse current withstand of the resistor.The amount of the paste constituent is 1.about.2.5 mol % for Li.sub.2 CO.sub.3, 72.+-.5 mol % for SiO.sub.2, 20.+-.3 mol % for Sb.sub.2 O.sub.3 and 8.+-.2 mol % for Bi.sub.2 O.sub.3.

Abstract: A process for delineating a vertical resistor on a semiconductor device is disclosed. Resistive and diffusion barrier layers are deposited and then etched, first by dry plasma and then by wet bath. The two step etching allows complete removal of the deposited layers with minimal damage to exposed dielectric, silicide, polysilicon or doped regions on the semiconductor.

Abstract: A process for fabricating electronic switching elements and/or circuits in multilayer thick-film technology on a substrate. The electronic switching elements and/or circuits are printed onto the substrate in the form of liquid or pasty mixtures of materials, then heat-treated, whereupon at least one insulating layer is deposited on the thick-film conducting layer. In this process, the surface of any desired insulating interlayer is finished abrasively and subsequently again at least one thick-film conducting layer or at least one insulating layer is deposited on the finished surface. Then, the surface or this insulating layer is again finished abrasively in subsequent printing operations of thick-film conducting layers or in other insulating layers in order to provide upon completion each layer at least the same processing ingredients and conditions as those on the surface of the substrate.

Abstract: A first conductor layer made of a thick film conductor is formed with a predetermined pattern on a substrate. A thick film resistor is then formed to be connected to the first conductor layer. An insulating layer made of a polyimide resin is formed over the substrate, the first conductor layer and the thick film resistor with through holes on the first conductor layer. Then, plating is applied to the whole surface of the insulating layer, the wall surfaces of the through holes and the exposed portions of the first conductor layer and etching is applied thereto with a predetermined pattern so that a second conductor layer is formed.

Abstract: A thin-film strain gauge and a method for producing it are proposed; the strain gauge is advantageously capable of integration into a thin-film circuit. The strain gauge comprises an elastically deformable spring element in combination with at least one elongation-sensitive resistor. The resistor disposition (R1-R4), the low-impedance connections (L11-L42) between the various resistance regions and the associated connection tracks (L5-L8) are applied in a vacuum process, preferably by cathode sputtering. The low-impedance connections (L11-L42) and the connection tracks (L5-L8) are of material which, although different from the material making up the actual resistance region, still has approximately the same temperature coefficient of resistance, so as to preclude errors caused by temperature.

Abstract: A method is disclosed for fabricating thick film electrical components which are exceptionally uniform in electrical properties and have increased density wherein a thick film ink comprised of (i) an organic vehicle which is reactive with a plasma to form gaseous reaction products at a temperature below its thermal decomposition temperature, (ii) a glass frit having a glass transition temperature above the thermal degradation temperature, and (iii) a particulate material having the desired electrical properties for the thick film electrical component are applied to a suitable substrate in a pattern corresponding to the electrical component. The applied layer is then subjected to a suitable plasma at a temperature below the thermal degradation temperature for a time sufficient to remove the organic vehicle from the applied layer. The resultant layer is then heated at or above the glass transition temperature of the glass frit until the glass frit fuses and forms a composite with the particulate material.

Abstract: One-component epoxy resin coating materials comprising(A) an epoxy resin or a mixture of epoxy resins,(B) as hardener for the epoxy resin at least one aromatic dicarboxylic acid dihydrazide or a triazine compound of the formula I ##STR1## (R=alkylamino or dialkylamino having 1 or 2 carbon atoms in the alkyl moieties, phenylamino or hydrazino) and(C) an anti-sagging agent or an inorganic filler or a mixture of anti-sagging agent and an inorganic filler, are used for the coating of fixed resistors. The resultant coatings exhibit good heat, moisture and cracking resistance.

Abstract: Disclosed is a method of forming a precision integrated resistor element on a semiconductor wafer whose resistance value accurately corresponds to its nominal design value. The method comprises forming a resistor body in combination with a test resistor structure by conventional ion implantation or diffusion of suitable dopant in selected regions of the wafer. Then, by measuring the resistance(s) and width(s) of the test structure the variation .DELTA..rho..sub.s in sheet resistance and variation .DELTA.W in width due to process and image tolerances, respectively, are determined. Next, using .DELTA..rho..sub.s and .DELTA.W the adjustment in length .DELTA.L necessary to match the resistance of the resistance element with the nominal design value is calculated. Finally, this information (.DELTA.

Abstract: A combustible gas sensor element prepared by the process of applying, to a sheathed wire coil, separate costs of catalytic wash each heated in a furnace, separate and alternating coats of porous ceramic and platinum each heated by passing an electric current through the coiled wire filament, and separate coats of porous ceramic top coating, each heated by passing an electric current through the filament.

Abstract: An array of electrically interconnected spaced electrical components on an apertured substrate wafer, each component being connected to terminal conductor pads on one surface of the substrate and to terminal conductor pads on the opposite surface of the substrate by thick film conductor strips which extend along the walls of the apertures is disclosed.

Abstract: A copper-containing thick film conductor composition comprising a mixture of finely divided particles of (a) a conductive material containing copper metal, (b) inorganic binder and (c) 0.2-5% wt. of a noncuprous metal selected from the group consisting of tungsten, molybdenum, rhenium and alloys and mixtures thereof all dispersed in organic medium. The metal particles must be within certain narrow ranges of particle size.

Abstract: A resistor sheet input tablet comprising two rectangular resistor sheets each provided at two opposite edges thereof with electrodes, the rectangular resistor sheets being superposed such that the electrodes on one of the resistor sheets lie perpendicularly to those on the other resistor sheets, wherein the resistor sheets have a two resistor layer construction comprising (a) a main resistor layer consisting of a thin metal film deposited thereon which in turn is bonded to (b) an electrically insulating layer and (c) a protective resistor layer formed on the surface of the main resistor layer.

Abstract: A process for making an encapsulated metal oxide varistor package comprises pressing the varistor powder mixture into a disc, sintering the pressed disc, followed by slow cooling to room temperature.The sintered disc is acid etched and a fritted-silver electrode applied on each side of the disc or in the alternative an aluminum coating is arc sprayed on each side of the disk followed by an arc sprayed copper coating on top of the aluminum coating. The fritted-silver electrode coating is heated to 660.degree. C. and slow cooled to room temperature. Sn-coated copper leads are soldered on the electroded disc of either electrode process and the assembly is encapsulated in resilient epoxy resin to form the encapsulated metal oxide varistor package.

Abstract: Method for producing a thin film resistor by vapor deposition or cathode sputtering techniques, wherein part of the resistance area of the film is covered by an electrically insulating layer which prevents oxygen diffusion onto the resistance material and causes a decrease of the resistance during aging, while the rest of the resistance area remains free.

Abstract: A low-cost electrical conductor is prepared by applying a mixture of a metallic powder and a polymer on a substrate, curing the polymer, effecting an augmentation replacement reaction to replace some of the metallic powder with a more noble metal in such a way that the total volume of deposited metal at the surface exceeds that of the original metal powder replaced, and thereafter applying a dielectric material to selected areas of the conductor thus formed. Imperfections such as pin holes and screen marks can be eliminated by heating the dielectric material to cause a degree of flow. Multiple layer interconnected conductors can be prepared by reapplying the mixture of metallic powder and polymer such that a portion thereof contacts the first prepared conductor, curing the polymer and effecting an augmentation replacement reaction with a metal which is more noble than the powder metal and the replacement metal of the first conductor.

Abstract: Thick-layer hybrid electronic printed circuits are formed by printing predetermined circuit pattern onto an insulating substrate by deposition of predetermined ink pattern thereupon, advantageously by silk-screening or masking, and then baking said ink circuit pattern, and repeating the deposition/baking steps as required, the subject forming process featuring use of an insulating ink comprising a non-conductive metallic oxide extender, desirably cuprous oxide, which ink is thus either potentially conductive or potentially resistive, and the development of such conductivity or resistivity, after baking, by treating the ink pattern with a reducing agent, desirably a borohydride, as to readily and quantitatively convert said metal oxide into a conducting metal.

Abstract: Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

Abstract: A method is disclosed for making a titanium dioxide element which can be used as an oxygen sensing element. The method includes obtaining a substrate for supporting a titanium dioxide film and placing that substrate in a vacuum chamber. A vacuum is drawn on the vacuum chamber and the chamber is heated to a temperature in a range from 400.degree.-700.degree. C. A low pressure carrier gas containing 1-10% by volume of oxygen along with a coating gas formed from an organometallic compound of titanium is flowed over the substrate. The coating gas is one which is heat decomposable into a titanium dioxide coating on the heated substrate. The coating gas and the carrier gas are at a total pressure from 100-200 Pa. The coating gas and carrier gas are flowed over the substrate until a titanium dioxide film of required thickness is built up. After formation of the required thickness of the titanium dioxide film, the substrate is removed from the vacuum chamber and heated to a temperature in a range from 800.degree.

Abstract: A method of forming thick film resistor circuits whereby a non-hole metal, such as copper, requiring a reducing atmosphere is included with resistor material requiring an oxidizing atmosphere. A fritless conductor paste with a small percentage of silver is deposited and fired in air at a low temperature. Resistors are then deposited and fired in air. Subsequently, the conductor material is reduced at a sufficiently low temperature so as not to adversely affect the resistors.

Abstract: A thin film circuit including resistor elements and capacitor elements is prepared by forming a tantalum film for capacitor on an insulating substrate, forming a tantalum film for resistor over the substrate, covering a predetermined region of the tantalum resistor film with a titanium film, heat treating a resulting assembly, removing the titanium film, and then covering the predetermined region with a metal film to provide ohmic contact therebetween.

Abstract: A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the substrate, an intermediate layer, and an upper layer upon which the various photoresist compositions are located to define the electrode structures, the intermediate layer being composed of a metal which has different solubility characteristics than either the upper or lower metal layers so that the various layers can be selectively etched by means of suitable solvents.

Abstract: Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) and Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO.sub.2) covering the semiconductor substrate.

Abstract: A metal oxide varistor with controllable breakdown voltage and capacitance characteristics is fabricated by controlled diffusion of lithium into conventional metal oxide varistor material at elevated temperature. The varistor layer containing lithium exhibits an increased breakdown voltage, lowered capacitance, and low leakage current while maintaining a high coefficient of nonlinearity.

Abstract: An improved polycrystalline silicon resistor having limited lateral diffusion, integrated circuits containing such resistors, and a method of their preparation is disclosed. The polysilicon resistor is formed by first doping the polysilicon layer with a p or n type impurity and thereafter neutralizing the treated layer with impurities of the other type so as to form a device wherein the concentration gradient between the resistor region of the aforesaid layer and its environment is low. The low concentration gradient reduces lateral diffusion during manufacture, thereby permitting manufacture of integrated circuits of higher circuit density and resistors with smaller dimensions, lower temperature coefficients and higher reliability.

Abstract: A semiconductor resistor device comprising a resistor region diffused in the surface area of a semiconductor substrate, resistor electrodes respectively ohmically contacted to the surface of the resistor region, and a protective layer coated on the surfaces of the resistor electrodes. A trimming electrode is provided which is ohmically contacted to the surface of the resistor region to alloy with the resistor and a hole is formed in that portion of the protective layer which faces the trimming electrode. Where laser pulses are emitted to the trimming electrode through the hole, the trimming electrode is alloyed with the resistor region to reduce the resistance of the resistor region.

Abstract: This invention is concerned with the fabrication of thick film, RuO.sub.2 -based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B.sub.2 O.sub.3, 14-17% SiO.sub.2, and an effective amount up to 5% of WO.sub.3 or MoO.sub.3.

Abstract: A ceramic multilayer circuit board is provided by sintering a multilayer wiring substrate containing alumina as a main component, which was prepared by the green sheet process, nickel plating and gold plating in this order on the superficial wiring conductor layer, printing a thick film conductor paste on the gold plating layer, firing the printed substrate and finally printing a thick film resistor paste on at least part of the thick film conductor layer and firing to form a thick film resistor layer.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: The invention relates to a process for the manufacture of non-linear resistors (varistors) from thick-layer ceramic material, in particular on a hybrid circuit substrate, or any other device requiring that a predetermined temperature should not be exceeded during its manufacture.According to the invention, after crushing a ceramic material in order to obtain a very fine powder of varistor material, a powder is produced of conductive or semiconductive material able to assume the pasty state at a temperature lower than 850.degree. C. and a binder is incorporated therein to obtain a screen printing paste. The layer deposited by screen printing on a substrate such as glass, is dried and then heat treated so as to assure cohesion of the layer. This layer is either inserted between a previously deposited electrode and another electrode, or covered by two separate electrodes. The invention is particularly applicable to matrix access display screens.

Abstract: Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

Abstract: Solderable, largely based metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

Abstract: A thin film strain gage structure (10, 110) for measuring the strain of an inflectible element (12, 112) wherein the gage is formed on a surface (15, 115) of the element and includes a sensing resistance (16, 116) and an adjusting resistance portion (21, 121). Connecting taps are formed in relationship to the resistors to permit adjustment of the adjusting resistor values by suitable connection to selected ones of the taps. The adjusting resistance is preferably disposed adjacent the sensing resistance so as to be subject to similar ambient conditions. The sensing resistance may be provided in the form of a Wheatstone bridge circuit with the adjusting resistors connected in series with two legs of the bridge. Adjustment of the adjusting resistance may be effected selectively by shorting out portions thereof or by suitably connecting to different portions thereof.

Abstract: A low-cost conductor, e.g. a printed circuit, is prepared by applying a mixture of a metallic powder and polymer on a substrate and curing the polymer, followed by an augmentation replacement reaction being effected to replace some of the metallic powder with a more noble metal in such a way that the total volume of deposited metal on the surface exceeds that of the original metal powder at that surface. This procedure produces contiguous layer of conducting metal on the substrate. The conductors thus formed can easily be soldered without leaching using a conventional tin-lead solders.

Abstract: A gas sensing device comprises a gas sensing element comprising a gas-sensitive resistive film formed of an aggregate of ultrafine particles of a suitable material deposited on the surface of a substrate of an electrical insulator formed with electrodes. In a method of manufacturing such a gas sensing device, a gas-sensitive material is evaporated in a gas atmosphere to provide the gas-sensitive resistive film of ultrafine particles of the material.

Abstract: To improve the adhesion of a nickel layer to a valve metal layer in a thin film electronic circuit, a boundary layer is created between the valve metal and the nickel layer. The boundary layer is created by oxidizing the valve metal surface and applying the nickel layer by cathode sputtering with sufficiently high energy to cause nickel-ion migration into the valve metal oxide layer. The so-formed boundary layer improves the mechanical adhesion of the nickel layer to the valve metal layer and also prevents penetration of solder to the valve metal layer since the boundary layer acts as a diffusion barrier.

Abstract: A conductivity type thin film humidity sensor on a silicon chip which sensor includes structure which electrically shields the sensing area from highly dissociative contaminants.

Abstract: An organic coating with slits or holes in a predetermined pattern is disposed on the surface of an electrically insulating substrate on which electrode leads have been formed. A paste of an electrically resistive material fills the slits or holes and is dried at 120.degree. to 140.degree. C. The surface of the paste is flush with that of the coating after which the paste preliminarily baked in a stream of oxygen at 500.degree. to 600.degree. C. while the coating is burnt off. The paste is fully baked at 800.degree. to 1000.degree. C. to form a heating resistor elements.

Abstract: Integrated structures of various combinations of inductors, capacitors and resistors are formed by bonded laminations of films of electrical conductors of desired configurations and electrical properties separated by films of dielectric material. Electrical terminals extending from appropriate ones of the conductors may be interconnected selectively to provide various single, series and parallel circuit component arrangements.

Abstract: A method of making a thin nickel film temperature sensitive device with a relatively high positive temperature coefficient of resistance utilizing a film of nickel deposited from a bulk nickel source onto an electrically insulating substrate, and device made thereby including the step of heat treating a resistor element having a thin film of nickel deposited on an electrically insulating substrate by heating in a reducing atmosphere to a peak temperature of at least 550.degree. C., over a heating cycle of at least about 20 minutes. The nickel film of the heat treated resistor element has a selected temperature coefficient of resistance which is at least 60% of the value of the coefficient for the bulk nickel and a sheet resistance of at least one ohm per square which properties are determined by the heat treating temperature and cycle time, and the thickness of the nickel film.

Abstract: A unitary thick film resistor structure includes a first thick film resistor element formed on one face of a substrate and a second thick film resistor element formed on the opposite face of the substrate. The resistor elements are of complementary, substantially equal and opposite temperature coefficient of resistance characteristics such that when the two elements are connected in parallel to form a unitary structure, the opposite temperature coefficient characteristics provide a stable, mutually compensated low net temperature coefficient of resistance, and exhibiting an immunity to subsequent baking operations incident to the provision of a sintered protective outer coating.