Abstract: A method for manufacturing a rotary anode for use in an X-ray tube is proposed. The method has the step of forming, on a graphite substrate plate, an intermediate layer of rhenium by subjecting a metallic chloride to the thermal decomposition CVD process at a substrate temperature of 1200.degree. C. or more. The method further has the step of forming, on the intermediate layer, an X-ray generating layer of tungsten or tungsten-rhenium alloy by subjecting a metallic fluoride to the hydrogen reduction thermal CVD process.

Abstract: A probe for use in a scanning tunneling microscope which can measure a macromolecule, i.e., a protein molecule. The probe is manufactured by covering a metal wire having a sharp end with a thin organic film, removing an end of the metal wire by an electric field evaporation process, electrodepositing metal ions on the metal wire and removing a portion of the organic film. A monomolecular film is formed on the surface of a metal wire by chemically adsorbing a chlorosilane based chemical adsorbent. Only a tip of the chemically adsorbed film is removed by the electric field evaporation procedure, and the metal ions are electrodeposited on the tip of the metal wire. As a result, a sharp metal tip is formed. After that, the chemically adsorbed film is removed by alkyl treatment.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometallic copper precursor and copper complex vapor of a volatile ligand or the hydrate of the ligand.

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

Abstract: A method for forming electrical interconnections in vias is provided by laser drilling vias in a composite that contains at least two circuitized organic polymeric substrates superimposed upon each other. The laser drilling causes metallic circuit lines contained within each substrate to melt and form a fused mass protruding a short distance out of the side of the drilled vias. Next, the drilled vias are plated with a conductive metal to thereby provide the interconnections.

Abstract: When a thin metal film is formed on a substrate at a constant substrate temperature by chemical vapor deposition while alternately and discontinuously introducing a raw material gas and a reducing gas onto the substrate, reducing the raw material gas with the reducing gas on the substrate, thereby conducting chemical vapor deposition, and repeating the chemical vapor deposition to obtain a desired film thickness, a thin metal film having a good surface flatness without any current leakage can be obtained without etching the substrate wafer, and when the reducing gas is excited to excited species by an exciting means at the introduction of the reducing gas and the excited species is used be reduce the raw material gas, a lower substrate temperature can be used and chemical vapor deposition process time can be made shorter than without using the exciting means.

Abstract: The disclosure relates to a method for forming a porous sheet comprising a plurality of porous sheets such as foamed sheet, mesh sheet and nonwoven fabric sheet. These sheets are adhered and layered to each other either by a melting or with an adhesive or by layering without each other with adhering these sheets to each other. Then, the porous sheet thus layered is plated at a high current density by forcibly applying plating liquid to the layered sheet in a direction substantially perpendicular thereto in a plating tank, or by vacuum evaporation while the layered sheet is being transported inside the vapor deposition vacuum container enclosed by a cooking tank through a cooling roller mounted therein. The metallic porous sheet formed according the above-described method is preferably used as the electrode of a battery.

Abstract: An input screen scintillator for an X-ray image intensifier tube. The tube includes light conductive cesium iodide needles formed on an electrically conductive substrate. Each needle is entirely coated with a material such as a metal or a semiconductor which reflects the light travelling within the needle toward the inside of the needle. This coating can enhance the efficiency and resolution of the image intensifier tube.

Abstract: This invention relates to a method for producing a smooth continuous and adherent pressure bonded or cold welded layer of a metal containing composite on a base or target material through the driving force of a pulsed laser. The method includes the steps of selecting a laser transparent substrate, applying thereto a thin laser absorptive polymeric film characterized by a high optical coefficient of absorption to the wavelength of said laser, applying the metal containing composite to the absorptive polymeric film, and placing the base or target material in close proximity to said composite. The composite is a multilayered composite comprising laser absorptive polymer, gold, nickel and gold-flash, and the pulsed laser energy is directed through the transparent substrate toward said composite and is absorbed by the polymeric film causing heating and vaporization thereof while leaving portions of the polymeric film unvaporized.

Abstract: A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.

Abstract: An improved process is provided for forming a multilayer structure (18) suitable for tape automated bonding thereto or for forming contacts. In the process, a first layer (12) of aluminum is formed on a substrate (10), a second layer (14) of a TiW alloy is formed on the first layer of aluminum, and a third layer (16) of gold is formed on the second layer of the TiW alloy, to which third layer of gold bonding is done. The improvement comprises annealing the second layer of the TiW alloy in an inert atmosphere at a temperature less than about 500.degree. C. for a period of time sufficient to form a film of an Al--TiW phase (20), believed to comprise TiAl.sub.3, at the interface between the first layer of aluminum and the second layer of the TiW alloy. The annealing is done prior to forming the third layer of gold on the second layer of the TiW alloy.

Abstract: A manufacturing method for an electrode in which ultra fine particles of active material formed in gas by an evaporation method are carried in a gas flow and blown onto a surface of a substrate, so that an electrode comprising a thin film of active material is formed on the surface of the substrate. A manufacturing method for an electrode-electrolyte composite in which ultra fine particles of active material formed in gas by the evaporation method are carried in a gas flow and blown onto a surface of a film comprising a solid electrolyte, so that an electrode comprising a thin film of active material is formed on the surface of the film. The above manufacturing method for an electrode can provide an anode or a cathode comprising an ultra thin film having an uniform thickness of under 10 microns inclusive, for example.

Abstract: A process is disclosed for creating highly-conformal titanium-containing films via chemical vapor deposition using bis(2,4-dimethylpentadienyl) titanium, an analog thereof, or a Lewis-base-stabilized form thereof, as a precursor. The deposition process takes place in a low-pressure chamber. A substrate within the chamber, and on which the film is to be deposited, is heated to a temperature within a range of about 300-600.degree. C. In one embodiment of the invention, titanium precursor compound vapor is admitted to the chamber either solely or in combination with one or more carrier gases. In another embodiment, titanium precursor compound vapor in combination with one or more carrier gases and/or other vapor phase reactants are admitted to the chamber.

Abstract: The adhesion of metal coatings, such as those produced by electroless or physical vapor deposition, on polypyromellitimide surfaces is improved by prior treatment of the surface with concentrated sulfuric acid, followed by aqueous alkali metal hydroxide of at least about 2M concentration. Further metal may be deposited on the surface, for example by electrolytic or physical vapor deposition, following the original metal deposition.

Abstract: The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of "standard" polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal may be vacuum deposited onto solid polymer layers.Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

Abstract: A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N.sub.2 0) gas, said steps being performed in the same apparatus.

Abstract: A composite substrate comprises a metal substrate, an electrically insulating ceramic layer formed on the metal substrate, a metal layer formed on the ceramic layer, a first mixed layer formed in an area near the interface between the metal substrate and the ceramic layer, and a second mixed layer formed in an area near the interface between the ceramic layer and the metal layer, each of the mixed layers being composed of the materials of the layers situated on both sides thereof. The composite substrate may comprise a plurality of electrically insulating dissimilar ceramic layers between the metal substrate and the metal layer, and a mixed layer formed in an area near the interface between any two of the adjacent ceramic layers.

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

Abstract: An article comprising a non-conductive substrate having a sub-micron thickness of an oxidizable conductive first metal coating thereon, and a second (promoter) metal which is galvanically effective to promote the corrosion of the first metal, discontinuously coated on the first metal coating. Optionally, the second metal-doped, first metal-coated substrate may be further coated with a salt, to accelerate the galvanic corrosion reaction by which the conductive first metal coating is oxidized. Also disclosed is a related method of forming such articles, comprising chemical vapor depositing the first metal on the substrate and chemical vapor depositing the second metal on the applied first metal coating, and of optionally applying a salt by salt solution contacting of the second metal-doped, first metal-coated substrate. When utilized in a form comprising fine-diameter substrate elements such as glass or ceramic filaments, the resulting product may be usefully employed as an evanescent chaff.

Abstract: In the deposition of metal on solid substrates by a Metal Organic Chemical Deposition process, an improvement comprises the provision of vapors of a precursor of the metal by passing an inert carrier gas through a mixture of the metal precursor and a liquid having a vapor pressure at ambient temperature lower than that of the metal precursor and in which the metal precursor is at least partially soluble.

Abstract: For plasma enhanced chemical vapor processing of semiconductor substrates, substrates are mounted on an elongate support, in a spaced parallel array. A shaft is rotatably mounted on the support and has electrode holding means, the electrodes alternating in polarity. The shaft, when rotated, moves the electrodes down in between the substrates, for positioning of the assembly in a reaction chamber for processing. After processing, and removal from the chamber, the shaft is rotated to move the electrodes out from between the substrates, to permit easy loading and unloading. The substrates are normally supported on boats positioned on the support. A particularly effective rf power feedthrough connects rf power from a power source through the door of the chamber.

Abstract: A method for improving the adhesion between a refractory metal film and a silicon substrate is disclosed, which comprises depositing the refractory metal film on the silicon substrate at a first temperature; and heating the contact surface between the deposited film and the silicon surface at a second temperature between 300.degree. and 600.degree. C., wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.

Abstract: A metal film forming method comprises steps of:forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; andheating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.

Abstract: A load indicating cell and a method of manufacturing a load indicating cell are disclosed and claimed. An ultrasonic transducer, grown on one surface of a load bearing member, such as a fastener, is used to determine the length, stress or other tensile load dependent characteristic of the member using ultrasonic techniques.

Abstract: The invention relates to an apparatus for measuring chemical and/or physical reaction sequences by nuclear magnetic resonance spectrometry and comprises a reaction path (1), a nuclear magnetic resonance spectrometer (2) and at least one reaction chamber (10) which is located in the reaction path, wherein means are provided for feeding at least the reaction product from the reaction chamber (10) to the nuclear magnetic resonance spectrometer (2). According to the invention, at least reaction chamber (10) and its reagent supply and discharge lines (5 to 7) are mounted, by means of a mounting angle (29), on the same head housing (9) on the latter's end which projects from the spectrometer magnet bore, in the stray field of the spectrometer magnet.

Abstract: A solid-state sensor is described for determining hydrogen and/or NO.sub.x concentration and the method for its preparation, it comprising a support on which a thin film of thickness between 80 and 200 nm is deposited consisting of tin (Sn) and bismuth (Bi) oxides, the quantity of bismuth in the thin film being between 5 and 7% in terms of atomic weight.

Abstract: An array of densely packed discrete metal microspheres which may be deformable and electrically conductive may be formed on a substrate by a method including the steps of providing a substrate having a depositing surface in the chamber forming a metal vapor in the chamber and depositing the metal vapor on the depositing surface, the depositing surface having a temperature at or above the melting point of the metal.

Abstract: In forming a metal or metal silicide film by CVD, a fluorosilane is used as a reaction gas, or a fluoro-silane is added to a source gas. Examples of the metal halide used in the present invention include fluorides and chlorides of tungsten, molybdenum, titanium, tantalum and niobium. Among them, fluorides of tungsten and molybdenum are more desirable particularly from the viewpoint of the availability of the deposited metal or metal silicide. It is preferred that the source gases, i.e. silane series gas and metal halide, be diluted with a carrier gas such as nitrogen, hydrogen, helium or argon, and this is also true of the fluoro-silane. The total pressure is preferably 0.01 to 10 Torr. The reaction temperature is desirably 200.degree. to 800.degree. C., more desirably 300.degree. to 500.degree. C. Plasma CVD instead of thermal CVD may be employed for the purpose of lowering the reaction temperature.

Abstract: Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Abstract: A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

Abstract: A thermally activated method of depositing a metal on a localized microscopic portion of a substrate, that can be carried out at relatively low process temperatures, and that is particularly useful for depositing metals in an amount and purity sufficient for electrical conductivity on substrates containing microelectronic circuits and devices or their respective precursors.

Abstract: The invention provides an apparatus for metal plating a substrate. The apparatus includes a chamber adapted to receive metal carbonyl gas. The chamber includes an infrared transparent window. The infrared transparent window has a cooling passage filled with liquid coolant. The liquid coolant has a temperature below which decomposition of the metal carbonyl gas occurs. The liquid coolant prevents decomposition of the metal carbonyl gas on the infrared transparent window. The liquid coolant also is substantially infrared transparent for allowing infrared radiation through the infrared transparent window and cooling passage into the chamber. An infrared radiation source sends infrared radiation into the chamber through the infrared transparent window and cooling passage to heat the substrate to a temperature at which decomposition of the metal carbonyl gas occurs.

Abstract: The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photorecording mediums.

Abstract: A process for coating metal on a substrate. The process uses organometallic compounds such as (trimethyl)(cyclopentadienyl) platinum in the presence of a reducing fluid such as hydrogen gas to produce high purity films capable of selective deposition on substrates containing, for example, tungsten and silicon. The films are deposited using chemical vapor deposition (CVD) or gas phase laser deposition. The invention also comprises devices made from the process of the invention.

Abstract: For forming a metal film of a desired property on a substrate, a target and the substrate are placed in a pressure-reducing chamber, and then pulse laser is irradiated to the target. This causes the component materials, such as ions, electrons, neutral atoms, cluster, fine grains and liquid drops, of the target to be emitted from the target, and then laser induced plasma is produced. These emissions of substances have spatial and timewise distribution determined by physical and chemical states. Then, a shielding plate having an opening is placed between the target and the substrate, and from the materials, only the material emitted in a predetermined direction is selected to control the property of the film deposited on the substrate. By locating a filter between the target and the substrate to open for a predetermined period of time, only the material emitted at a predetermined velocity can be selected. Further, by applying a predetermined d.c.

Abstract: Solder reflow on an electrical interconnect substrate between a plurality of electrical contacts. The method includes coating the contacts with tin/lead solder, depositing a wetting metal between the contacts, and heating the substrate to at least the melting point of the solder so that the solder melts, reflows across the wetting metal and connects or links the contacts. The entire surface of a customizable copper/polyimide substrate can be personalized by solder links and TAB leads from surface-mounted integrated circuits can simultaneously be soldered to the substrate.

Abstract: An atmospheric pressure chemical vapor deposition (APCVD) system for doping indium-oxide films with both tin and fluorine to produce dual electron donors in a non-batch process. The APCVD system has a conveyor belt and drive system for continuous processing through one or more reaction chambers separated by nitrogen purge curtains. A substrate passing through the system enters a muffle heated by several heaters and the reaction chambers are supplied by a source chemical delivery system comprising an oxidizer source, a fluorine chemical source, a nitrogen source, rotometers for the above sources, a mass flow controller, a tin chemical bubbler, heated lines, an indium chemical bubbler, a pair of water baths with heaters, and associated valving.

Abstract: An electret sheet comprises a porous sheet made of a dielectric polymer and at least one solid material selected from the group consisting of organic materials, inorganic materials, and metallic materials, the porous sheet having the material spaced at various intervals and a method for the manufacture of the said electret sheet.

Abstract: Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.

Abstract: A method of processing a semiconductor wafer comprises, a) chemical vapor depositing (CVD) a metal layer atop a semiconductor substrate; and b) impinging laser energy upon the CVD metal layer at an optical fluence of from 0.05 Joules/cm.sup.2 to 0.30 Joules/cm.sup.2 for a period of time sufficient to relieve mechanical stress associated with the CVD metal layer yet insufficient to melt the CVD metal layer. In accordance with another aspect of the invention, such treatment method could also be used to form a desired silicide layer in the same step.

Abstract: A method of producing a metallized pattern on a substrate includes the steps of providing a substrate having a high aspect ratio groove defining a desired metallization pattern and applying metallization to the substrate. The high aspect ratio groove is utilized to prevent metallization across the groove boundary thereby producing electrically isolated areas. The substrate can be a circuit board, hybrid module or other component carrying structure. Also the substrate can be a resonator or a stripline device in which the groove is used to electrially isolate a lead or wire extending from the substrate in the ground plane portion of the structure.

Abstract: A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).

Abstract: A method of flux conduction comprising providing a structure with anisotropy not purely in the transverse in-plane direction such that flux spreading into the transverse in-plane direction can occur by rotation.This method of flux conduction is used in magnetic devices having coupled magnetic layers or coupled magnetic domains. Devices disclosed which utilize this method can function as a magnetic recording head, bubble memory, magnetic field structure, magnetic field sensor, transformer, laminated magnetic memory element or magnetic shield.

Abstract: A continuous vacuum processing apparatus has a vacuum processing chamber and at least one auxiliary vacuum chamber connected to at least one of the upstream and downstream ends of the vacuum processing chamber as viewed in the direction of flow of a material to be processed. The apparatus further has a slit-type seal device provided in the auxiliary vacuum chamber and capable of conveying the material to be processed while sealing the vacuum processing chamber from exterior of the vacuum processing chamber. The seal device is provided with a guide member for guiding the material. Independent tensioning devices are provided in the vacuum processing chamber and the auxiliary vacuum chamber and capable of independently applying tensions to the portions of the material in the vacuum processing chamber and auxiliary vacuum chamber, so that a material which is not resistant to heat can be processed without being damaged.

Abstract: A moisture sensing element includes a moisture permeable gold electrode film formed on a moisture sensitive polyvinyl alcohol film which is carried by a glass substrate. The moisture permeable gold electrode film is formed by a vacuum evaporation under a nitrogen gas pressure of 1.0.times.10.sup.-3 Torr through 1.0.times.10.sup.-2 Torr. The deposition rate is about 0.5 .ANG./sec., and the moisture permeable gold electrode film has a thickness of 100 .ANG. through 200 .ANG..

Abstract: A method and arrangement for providing damping of undesired modes of piezoelectric vibrators is disclosed that eliminates the tedious and often inaccurate methods of known mass-loading techniques. Instead, the arrangement relies on physically altering a controlled amount of the piezoelectric material located at a predetermined point to effect the selective damping needed to minimize the undesired responses and to minimally interfere with the desired mode of operation.

Abstract: A method for forming connections between copper conductors disposed on a substrate includes the steps of coating the copper conductors with a layer of nickel, exposing the coated copper conductors to a gas which includes a tungsten-bearing compound, and irradiating the substrate with a laser beam to deposit the tungsten between the copper conductors. A system for forming connections between copper conductors disposed on a substrate, includes means for coating the copper conductors with a layer of nickel, means for exposing the coated copper conductors to a gas which includes a tungsten-bearing compound, and means for irradiating the substrate with a laser beam to deposit the tungsten between the copper conductors.

Abstract: A connector system for use in coupling an implantable electrical lead to an implantable pulse generator, or other implantable electrical apparatus. The connector system includes a connector pin assembly, typically mounted to the implantable lead and a connector block, typically mounted to the electrical stimulator. The connector block is provided with a lumen, in which a plurality of resilient, elastomeric rings are linearly arranged. The rings are so sized as to frictionally engage a connector pin which is provided with a plurality of conductive pads, each coupled to a conductor within the implantable lead. Certain ones of the elastomeric rings are conductive, and engage with the conductive pads on the connector pin. Others of the rings are nonconductive and act as insulators and fluid seals. The connector pin assembly is also provided with a circumferential groove, which interlocks with the deflectable beam members of a retainer mounted to the connector block.

Abstract: A process of forming an interconnection layer for an integrated circuit in which the conductor pattern is embedded in a layer of insulating material to form a conductor-insulator layer. The conductor-insulator layer is formed by selectively filling recesses in a layer of insulating material with conductive material. The filling of the recesses is accomplished in two steps: depositing an initial layer of conductive material by a process which selectively deposits the conductive material on a seed material located in the bottom of the recesses, then depositing the bulk of the conductive material by a process which selectively deposits conductive material on existing conductive material.

Abstract: An optical quality film is transferred from a master optical surface to a condary substrate by means of a replication technique using a master optical surface as a mold.