Abstract: A method for fabricating an electrode for electrochemical reactor is provided, wherein the electrode includes a porous carbon diffusion layer and a catalyst layer. The method includes a step of depositing the catalyst layer on the diffusion layer by a DLI-MOCVD process.

Abstract: A fabrication method which can improve electrical properties, shorten processing time, and reduce the thickness of a chip package by achieving an ultra-thin fine circuit pattern. The method for fabricating a printed circuit board includes: providing an insulating material; forming in the insulating material at least one via-hole for interlayer electrical connection; ion beam treating the surface of the insulating material having the via-hole formed therein; forming a copper seed layer on the surface-treated insulating material using a vacuum deposition process; and plating a copper pattern on the copper seed layer to form a circuit pattern.

Abstract: To provide a ruthenium compound suitable for a chemical vapor deposition method (CVD method). A liquid cyclooctatetraenetricarbonyl ruthenium complex represented by the following Formula (1) is obtained by irradiating a solution mixture of dodecacarbonyl triruthenium and a cyclooctatetraene with light. A satisfactory ruthenium film or ruthenium oxide film can be easily obtained by a chemical vapor deposition method using the complex as a raw material.

Abstract: A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Abstract: Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: The invention relates to a vapour-deposition material for the production of optical layers of high refractive index which comprises titanium oxide and gadolinium oxide and/or dysprosium oxide, to a process for the preparation thereof, and to the use thereof.

Abstract: A method of depositing electrically conductive material onto a dielectric substrate is provided. The method includes the steps of providing a dielectric substrate and depositing electrically conductive material onto the dielectric substrate using a cold spray gas dynamic process, wherein the cold spray gas dynamic process accelerates the electrically conductive material to a supersonic velocity.

Abstract: A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.

Abstract: Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Abstract: A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target.

Abstract: A shell for an electronic device is provided. The shell includes a transparent shell body, a pattern layer formed on an inner surface of the shell body, and a metal coating formed on an outer surface of the shell body which is light transmitting.

Abstract: A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-limiting growth process.

Abstract: Surface metallization technology for ceramic substrates is disclosed herein. It makes use of a known phenomenon that many metal-metal oxide alloys in liquid state readily wet an oxide ceramic surface and strongly bond to it upon solidification. To achieve high adhesion strength of a metallization to ceramic, a discrete metallization layer consisting of metal droplets bonded to ceramic surface using metal-metal oxide bonding process is produced first. Next, a continuous metal layer is deposited on top of the discrete layer and bonded to it using a sintering process. As a result a strongly adhering, glass-free metallization layer directly bonded to ceramic surface is produced. In particular, the process can be successfully used to metallize aluminum nitride ceramic with high thermal and electrical conductivity copper metal.

Abstract: Under one aspect, a method of making a superconductor wire includes providing an oxide superconductor layer overlaying a substrate; forming a substantially continuous barrier layer over the oxide superconductor layer, the barrier layer including metal; depositing a layer of metal particles over the barrier layer, said depositing including applying a liquid including metal particles over the barrier layer; and sintering the layer of metal particles to form a substantially continuous metal layer over the barrier layer. In one or more embodiments, the oxide superconductor layer is oxygen-deficient, and the method may include oxidizing the oxygen-deficient oxide superconductor layer. At least a portion of the sintering and the oxidizing may occur simultaneously, for example by performing them at an oxygen partial pressure and a temperature sufficient to both sinter the metal particles and to oxidize the oxygen-deficient oxide superconductor layer.

Abstract: The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer.

Abstract: A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.

Abstract: The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

Abstract: A method of manufacturing a solenoidal magnet structure, includes the step of providing a collapsible accurate mold in which to wind the coils winding wire into defined positions in the mold, placing a mechanical support structure over the coils so wound, impregnating the coils and the mechanical support structure with a thermosetting resin, allowing the thermosetting resin to harden, and collapsing the mold and removing the resultant solenoidal magnet structure formed by the resin impregnated coils and the mechanical support structure from the mold as a single solid piece.

Abstract: A methanol oxidation catalyst is provided, which includes nanoparticles having a composition represented by the following formula 1: PtxRuyTzQu ??formula 1 In the formula 1, the T-element is at least one selected from a group consisting of Mo, W and V and the Q-element is at least one selected from a group consisting of Nb, Cr, Zr and Ti, x is 40 to 90 at. %, y is 0 to 9.9 at. %, z is 3 to 70 at. % and u is 0.5 to 40 at. %. The area of the peak derived from oxygen bond of T-element is 80% or less of the area of the peak derived from metal bond of T-element in a spectrum measured by an X-ray photoelectron spectral method.

Abstract: A process for manufacturing electrodes for electrolysis, including steps of forming an arc ion plating (AIP) undercoating layer including valve metal or valve metal alloy containing a crystalline tantalum component and a crystalline titanium component on a surface of the electrode substrate comprising valve metal or valve metal alloy, by an arc ion plating method; heat sintering, including the steps of coating a metal compound solution, which includes valve metal as a chief element, onto the surface of the AIP undercoating layer, followed by heat sintering to transform only the tantalum component of the AIP undercoating layer into an amorphous substance, and to form an oxide interlayer, which includes a valve metal oxides component as a chief element, on the surface of the AIP undercoating layer containing the transformed amorphous tantalum component and the crystalline titanium component; and forming an electrode catalyst layer on the surface of the oxide interlayer.

Abstract: Disclosed is a method for preparing an electrode having an electrochemical catalyst layer, comprising the steps of: providing a substrate having a conductive layer thereon, immersing the substrate in a first solution having a conditioner to form a conditioner layer on the surface of the conductive layer, and immersing the substrate in a second solution having polymer-capped noble metal nanoclusters to form an electrochemical catalyst layer on the conditioner layer of the substrate. This method can reduce the amount of noble metal used in the electrochemical catalyst layer and is suitable for mass production.

Abstract: A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Abstract: Zirconium precursors of the formulae Such precursors are liquids at room temperature, and can be employed in vapor deposition processes such as ALD to form zirconium-containing films, e.g., high k dielectric films on microelectronic device substrates. The zirconium precursors can be stabilized in such vapor deposition processes by thermal stabilization amine additives.

Abstract: An object of the present invention is to provide an electrode for an electrochemical measurement apparatus that is less susceptible to influence from interference substances as compared to conventional technology and an electrochemical measurement apparatus using such an electrode. A working electrode 9 (an electrode 1 for an electrochemical measurement apparatus) used in an electrochemical measurement apparatus 3 of the present invention uses an alloy containing iridium and rhenium with such a composition that selectivity for hydrogen peroxide can be obtained.

Abstract: Prior electrochromic devices frequently suffer from poor reliability and poor performance. Some of the difficulties result from inappropriate design and construction of the devices. In order to improve device reliability two layers of an electrochromic device, the counter electrode layer and the electrochromic layer, can each be fabricated to include defined amounts of lithium. Further, the electrochromic device may be subjected to a multistep thermochemical conditioning operation to improve performance. Additionally, careful choice of the materials and morphology of some components of the electrochromic device provides improvements in performance and reliability. In some devices, all layers of the device are entirely solid and inorganic.

Abstract: A layer system that filters sun and heat can be applied to glass by a vacuum coating process. The system comprises at least one series of metal layers in addition to a respective series of lower dielectric layers and a respective series of upper dielectric layers. At least one series of metal layers and one series of upper and lower dielectric layers are configured as a sandwich system, wherein one metal layer is encapsulated by an upper and a lower intermediate layer consisting of hypostoichiometrically nitrided or oxidized metal of the metal layer and sandwich systems of the series of layers contain individual sandwich layers of a stoichiometric and hypostoichiometric oxide or nitride of a metal or semiconductor. An oxygen or nitrogen deficit of the sandwich layers increases towards a neighboring sandwich system and the oxide and nitride layers are produced in a vacuum coating process.

Abstract: An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.

Abstract: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.

Abstract: Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

Abstract: Disclosed is a method for producing a negative electrode for nonaqueous electrolyte batteries, which comprises the following three steps: (A) a step for forming a negative electrode by depositing a negative electrode active material on a collector; (B) a step for subjecting the negative electrode to a heat treatment; and (C) a step for providing the negative electrode active material with lithium after the step (B).

Abstract: A method of manufacturing a negative electrode includes: a first step of forming a plurality of columnar active material blocks capable of electrochemically storing and releasing lithium ions on the surface of a current collector; and a second step of disposing particulate lithium in the gaps between the active material blocks.

Abstract: Precursor compositions in the form of a tape that can be transferred to a substrate and converted to an electronic feature at a relatively low temperature, such as not greater than about 200° C. The tape composition can be disposed on a carrier to form a ribbon structure that is flexible and can be handled in a variety of industrial processes.

Abstract: A method of manufacturing an electrode for a lithium secondary battery in which a thin film of active material is deposited on a current collector is provided that eliminates adverse effects on the battery caused by protrusions adhered on an electrode surface. The method of manufacturing an electrode for lithium secondary batteries includes depositing a thin film of active material on a current collector using thin-film deposition equipment as shown in FIG. 1, and performing a compression process after depositing the thin film, whereby the heights of protrusions formed on the electrode surface are reduced.

Abstract: Methods of selectively forming a conductive material and methods of forming metal conductive structures are disclosed. An organic material may be patterned to expose regions of an underlying material. The underlying material may be exposed to a precursor gas, such as a platinum precursor gas, that reacts with the underlying material without reacting with the remaining portions of the organic material located over the underlying material. The precursor gas may be used in an atomic layer deposition process, during which the precursor gas may selectively react with the underlying material to form a conductive structure, but not react with the organic material. The conductive structures may be used, for example, as a mask for patterning during various stages of semiconductor device fabrication.

Abstract: The present invention relates to a process of preparing a nanogap electrode and a nanogap device using the same, and a preparing process according to the present invention is characterized in that reduced metal is grown by reduction reaction from a metal ion in solution on the surface of a metal pattern with a predetermined shape. A method of preparing a nanogap electrode according to the present invention has an advantage that nanogap electrodes having a gap distance of 1-100 nm, which are difficult to prepare by a conventional method, can be easily prepared in a reproducible and uniform manner.

Abstract: Ink is manufactured by mixing unoxidized metallic particles to a binder. The ink is printed on an object (502) and hardened for forming a conductor. The process is performed in an inert atmosphere or in vacuum for maintaining the electrical conductivity of the conductor (500).

Abstract: The present invention refers to a coating installation and a corresponding method or coating a substrate comprising the steps of: providing a substrate having at least one surface to be coated; depositing a patterned mask layer on the at least one surface of the substrate by using a printing method, the patterned mask layer comprising one or more balls; depositing at least one layer of coating material on the surface of the substrate having the patterned mask layer deposited thereon, depositing of the at least one layer being performed by at least one of the group comprising a vacuum deposition method, a sputtering method, an evaporation method, a plasma coating method, a CVD method, and a PVD method.

Abstract: The invention provides a substrate for a liquid discharge head having a heat generating resistor layer, wiring electrically in contact with the heat generating resistor layer, an insulating protection layer that covers the heat generating resistor layer and the wiring, and a liquid passage that are formed in order on an insulating layer formed on a base plate. The insulating protection layer being a layer formed by radical shower CVD.

Abstract: The invention relates to a vapour-deposition material for the production of optical layers of high refractive index which comprises titanium oxide and ytterbium oxide in a molar ratio of from 4:1 to 1:4, to a process for the preparation thereof, and to the use thereof.

Abstract: This invention introduces a method for treating a surface of an electrically conductive object with a refractory metal. In one embodiment, the refractory metal is tantalum and the object is a titanium substrate. A surface layer of mixed tantalum and titanium oxides is created by first heating the object and tantalum chloride in a reaction chamber and subsequently heat treating the object in an oxygen containing environment. The electrically conductive object can in a non-limiting way be DSA solutions (Dimensionally Stable Anodes), fuel cells or connector plates.

Abstract: An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The monatomic layer coating may comprise an electrically conductive material, for example, a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Os and preferably Au. Methods of making such separator elements and assemblies are also provided.

Abstract: This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes. The ALD process includes depositing a surface-activating group on the surface; exposing the deposit of the surface-activating complex to a ruthenium precursor to form a deposited ruthenium complex on the surface; and reacting the deposited ruthenium complex with a reducing agent to form a ruthenium-containing film on the surface. This invention is also directed to ruthenium complexes, RuL2L*, that can be used as ruthenium precursors in these processes.

Abstract: The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided.

Abstract: A physical vapor deposition method for the deposition of thioaluminate phosphor compositions includes providing one or more source materials including an intermetallic barium aluminum compound, a barium aluminum alloy or a protected barium metal, providing an activator species and effecting deposition of the one or more source materials and activator species as a phosphor composition on a selected substrate. The method allows for the deposition of blue thin film electroluminescent phosphors with high luminance and colors required for TV applications.

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.

Abstract: A metal material with electric contact layer includes a metal base made of metal containing chromium; an adhesive layer formed on a surface of the metal base, mainly containing chromium and having a thickness of 5 nm or more and 200 nm or less; and an electric contact layer formed on the surface of the adhesive layer, made of noble metal or an alloy of the noble metal, and having a thickness of 1 nm or more and 20 nm or less.

Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.

Abstract: A method of forming a layer of an electrically conductive metal-silicide material, comprises steps of: providing a Si-containing workpiece; forming a Ni-doped Co layer on a surface of the workpiece, as by sputter deposition utilizing a Ni-doped Co sputtering target; and reacting the Ni-doped Co layer and workpiece. Embodiments include performing a salicide process to form electrically conductive Ni-doped Co silicide functioning as electrically conductive contacts to the gate electrode and source and drain regions of a MOS transistor. Also disclosed are PVD sources, e.g., sputtering targets, comprising Ni-doped Co and utilized for forming the Ni-doped Co layer.

Abstract: A metal conductor layer is provided on at least one surface of a heat resistant base. The heat resistant base is peelable from the metal conductor layer. The heat resistant base is preferably a metal foil or a non-thermoplastic polyimide resin film. The metal conductor layer preferably includes a vapor deposition metal layer and/or a plating metal layer. The metal conductor layer preferably includes a metal layer (I) formed in an interface with the heat resistant base by vapor deposition, and at least one metal layer (II) formed on the metal layer (I) by vapor deposition or electroplating. At least one insulative film layer of a non-thermoplastic polyimide resin may be provided on the metal conductor layer.