Abstract: A capacitor electrode is composed of an SrRuO3 film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. Novel silylantimony compounds are also disclosed.

Abstract: To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.

Abstract: A separator assembly for use in a stack of electrochemical cells is provided, having a first conductive metallic substrate with a first surface and a second conductive metallic substrate with a second surface, wherein each of the first and second surfaces are overlaid with an ultra-thin electrically conductive metal coating. The first and second surfaces form electrically conductive paths at regions where the metal coating of the first and second layer contact one another. The contact of the surfaces overlaid with metal coating is sufficient to join the first and second substrates to one another. Preferred metal coatings comprise gold (Au). Methods of making such separator assemblies are also provided.

Abstract: Techniques are described for fabricating multilayer structures having arrays of conducting elements or apertures in a conductive grid which can be used to form frequency selective surfaces (FSSs), antenna arrays and the like on flexible substrates. Fabrication techniques can include use of a polymer mask or direct dielectric molding. In embodiments utilizing a polymer mask, a temporary 3D polymeric relief pattern is formed on a substrate and used as a mask or stencil to form the desired pattern elements. In an additive process, the conductive material is deposited over the masked surface. Deposition can be followed by mask removal In the subtractive process, the conductive layer can be deposited prior to formation of the polymer mask, and the exposed parts of the underlying conductive layer can be etched. Other embodiments utilize dielectric molding in which the molded structure itself becomes an integral and permanent part of the FSS structure.

Abstract: In a method of manufacturing a non-shrinkage ceramic substrate, a ceramic laminated structure, which is formed of a plurality of laminated green sheets each having an interconnecting pattern and has an external electrode formed on at least one of a top and bottom thereof, is prepared. A metal layer is formed to cover at least a portion of the external electrode. A constraining green sheet is disposed on at least one of the top and bottom of the ceramic laminated structure to suppress a planar shrinkage of the green sheets. The ceramic laminated structure is fired at the firing temperature of the green sheets to oxidize the metal layer. The constraining green sheet and a metal oxide layer, which is formed by oxidizing the metal layer, are removed. Accordingly, an electrode post-firing process can be omitted and the adhering strength between the electrode and the ceramic laminated structure can be increased.

Abstract: The present invention relates to a data record carrier of the type with ferroelectric memory layer, its method of manufacture and a micro-tip recording system incorporating same. The invention applies in particular to computer-based or multimedia applications requiring high memory capacities. A record carrier according to the invention comprises a substrate, a counter-electrode deposited on the substrate and intended to cooperate with an electrode of a data reading and/or writing device, and at least one ferroelectric memory layer which is able to store these data and which exhibits a first face in close contact with said counter-electrode. According to the invention, the counter-electrode is made of a substance comprising a carbonaceous material chosen from the group consisting of carbon in the form of graphite or amorphous diamond, the carbides of a metallic or non-metallic element with the exclusion of ionic carbides, and their mixtures.

Abstract: Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Abstract: Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract: A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeLn or cyclic LTe(-L-)2TeL, wherein at least one L contains a N bonded to one said Te, “n” is between 2-6, inclusive, and each “L,” is independently selected from certain alkyl and aryl groups. The process further includes (c) optionally, introducing at least one M-containing source, wherein M is Si, Ge, Sb, Sn, Pb, Bi, In, Ag or Se, or a combination of any of those; (d) optionally, introducing a hydrogen-containing fluid; (e) optionally, introducing an oxygen-containing fluid; (f) optionally, introducing a nitrogen-containing fluid; (g) reacting the precursor(s) and M-containing source(s), if any, in the reactor with the hydrogen-, oxygen- and/or nitrogen-containing fluid, if any; and (h) depositing a tellurium-containing film onto the substrate.

Abstract: In a method for coating a phosphor or a scintillator layer onto a flexible substrate, within a sealed zone maintained under vacuum conditions, by the step of vapor deposition, said phosphor or scintillator layer is, continuously or discontinuously, deposited onto said substrate, and said substrate is deformed at least before, during or after said step of vapor deposition, in order to provide the manufacturer, by a process of exceptionally high yield, with large deposited phosphor or a scintillator sheets having constant speed and image quality properties, further offering availability of all formats as desired for screens, plates or panels ready-for-use in a scanning apparatus in computed radiography, screen/film radiography and direct radiography.

Abstract: A method for manufacturing an organic tri-stable device on a substrate includes forming a first metal layer on the substrate. A first organic mixture layer is formed over the first metal layer, and a diffusion barrier layer is formed over the first metal layer. A second organic mixture layer is formed on the diffusion barrier layer, and a second metal layer is formed over the second organic mixture layer.

Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

Abstract: A Convergent-Divergent-Convergent nozzle apparatus for direct-write applications is described. The tip apparatus includes at least three nozzles concentrically positioned in series. In a non-limiting embodiment, a first nozzle has a converging taper, a second nozzle extends from the first nozzle with a diverging taper, and a third nozzle extends from the second nozzle and has a converging taper. The nozzles are positioned in series and are coaxial, and can be formed from either separate components or a monolithic structure. Such an arrangement has permitted direct writing of aerosolized particle streams in line widths from 3.7-8 ?m in width prior to sintering. Further refinements to the apparatus and processing parameters may result in line widths of 1 ?m or less. Aerosolized particles may comprise conductor or semiconductor precursors that may be processed into microelectronic conductors or semiconductors, respectively. The particles may also comprise nanostructures or nanoparticles.

Abstract: The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

Abstract: The present invention provides a method for manufacturing embossed conductive cloth, which comprises the steps of (a) providing cloth made of natural fibers or artificial fibers; (b) embossing the cloth to form embossed patterns on it; (c) subjecting the cloth with embossed patterns to a surface roughening treatment while maintaining the embossed patterns on the cloth; and (d) subjecting the surface-roughened cloth to a surface metalizing treatment. The embossed conductive cloth obtained from the method of the present invention has excellent metal adhesion.

Abstract: A stimulation electrode is provided having an electrically conducting electrode base member which is partially covered with an electrically insulating ceramic layer. The ceramic layer is formed of an oxide and/or an oxynitride of at least one metal of the group of titanium, niobium. tantalum, zirconium, aluminum and silicon. Various methods are provided for production of the stimulation electrode, including methods in which the ceramic layer is formed in situ by a thermal, chemical or electrochemical oxidation or oxynitridation process. The stimulation electrode may be used as a cardiac pacemaker electrode, a neuro-stimulation electrode, or another human implant.

Abstract: To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the workpiece to form a raised field region in said first plating region and a recessed region in said first non-plating region. Then, an accelerator film is applied globally on the workpiece. A portion of the accelerator film is selectively removed from the field region, and another portion of the accelerator film remains in the recessed acceleration region. Then, metal is deposited onto the workpiece, and the metal deposits at an accelerated rate in the acceleration region, resulting in a greater thickness of metal in the acceleration region compared to metal in the non-activated field region. Then, metal is completely removed from the field region, thereby forming the metal feature.

Abstract: A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.

Abstract: A method for manufacturing an electrode of an electrochemical element includes providing lithium and an element that has a larger atomic weight than that of lithium and is other than a constituting material of the electrode to an electrode by using a lithium vapor and a vapor of the element.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

Abstract: A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing and corrosion resistant underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of transition metal oxynitride, having the general formula MeOxNy, where Me represents a single element or an alloy formed with two or more of the following transition metal elements: Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, here x can be within the range between 0 and 3 and y is in the range between approximately 0 and 2 By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the adhesion layer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.

Abstract: A metallized film and a process for making the film are disclosed. In general, the metallized film includes a polymeric film layer that is coated with a polyester coating composition. A metal layer is then formed on top of the polyester coating. The polyester coating acts as a tie layer between the metal layer and the underlying film. The polyester film composition may be formed from, in one embodiment, isophthalic acid, a sulfomonomer, and 2-methyl 1,3-propane diol. The above diol has been found to improve adhesion between the metal layer and the polymeric film layer.

Abstract: A radiation converter has a luminophore layer formed by needle-shaped crystals applied on a substrate, the crystals being composed of Csl. doped with Tl. The emission spectrum is modified to obtain smaller values by making the Tl content between 200 ppm and 2,000 ppm.

Abstract: Disclosed herein is a method of forming low-resistance metal pattern, which can be used to obtain a metal pattern having stable and excellent characteristics by performing sensitization treatment using a copper compound before an activation treatment for forming uniform and dense metal cores, a patterned metal structure, and display devices using the same.

Abstract: Various structures having a dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating structures having such a dielectric film produce the structures with a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4 are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.

Abstract: A heat treated electrochromic device comprising an anodic complementary counter electrode layer comprised of a mixed tungsten-nickel oxide and lithium, which provides a high transmission in the fully intercalated state and which is capable of long term stability, is disclosed. Methods of making an electrochromic device comprising an anodic complementary counter electrode comprised of a mixed tungsten-nickel oxide are also disclosed.

Abstract: The invention relates to dicopper(I) oxalate complexes stabilized by neutral Lewis bases, such as alkenes or alkynes, and to the use of dicopper(I) oxalate complexes as precursors for the deposition of metallic copper, in which the neutral Lewis bases used are alkynes, alkenes, triarylphosphines, CO or isonitriles.

Abstract: A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.

Abstract: A method of manufacturing a negative electrode for a non-aqueous electrolyte secondary battery includes a step of imparting lithium to a precursor of the negative electrode capable of storing and releasing lithium, by a film forming method in a dry process. In this step, the precursor is brought into contact with a measuring terminal having a non-aqueous electrolyte and a counter electrode. The amount of lithium stored in the precursor is calculated from an open circuit potential of the precursor with respect to the counter electrode. Further, according to the calculated amount of stored lithium, the amount of lithium to be imparted to the precursor is controlled.

Abstract: A polycrystalline silicon thin film having grains defined by grain boundaries is provided. The polycrystalline silicon thin film is formed by interposing a cover layer between an amorphous silicon layer and a metal layer to diffuse the metal into the amorphous silicon layer through the cover layer, removing the cover layer, crystallizing the amorphous silicon layer to be changed to a polycrystalline silicon layer, depositing a metal on the polycrystalline silicon layer, and annealing the polycrystalline silicon layer.

Abstract: In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consumption, while the pump down helps prevent loss of tungsten selectivity to silicon.

Abstract: A method of depositing conformal film into high aspect ratio spaces includes the step of forming a gradient of precursor gas inside the space(s) prior to deposition. The gradient may be formed, for example, by reducing the pressure within the deposition chamber or by partial evacuation of the deposition chamber. The temperature of the substrate is then briefly increased to preferentially deposit precursor material within the closed or “deep” portion of the high aspect ratio space. The process may be repeated for a number of cycles to completely fill the space(s). The process permits the filling of high aspect ratio spaces without any voids or keyholes that may adversely impact the performance of the resulting device.

Abstract: A negative electrode for a nonaqueous electrolytic rechargeable battery capable of storing and discharging lithium ions is manufactured in the steps of forming a lithium metal layer on a carrier substrate by a gas phase method, superimposing the surface of the lithium metal layer formed on the carrier substrate on a negative electrode active material layer formed on a collecting body, storing the lithium metal layer into the negative electrode active material layer in nonaqueous electrolyte, and removing the carrier substrate from the negative electrode active material layer.

Abstract: Methods and apparatus for the deposition of a source material (10) are disclosed. An atomizer (12) renders a supply of source material (10) into many discrete particles. A force applicator (14) propels the particles in continuous, parallel streams of discrete particles. A collimator (16) controls the direction of flight of the particles in the stream prior to their deposition on a substrate (18). In an alternative embodiment of the invention, the viscosity of the particles may be controlled to enable complex depositions of non-conformal or three-dimensional surfaces. The invention also includes a wide variety of substrate treatments which may occur before, during or after deposition. In yet another embodiment of the invention, a virtual or cascade impactor may be employed to remove selected particles from the deposition stream.

Abstract: Disclosed herein is method for making a wire comprising contacting a first end of a first superconducting wire with a second end of a second superconducting wire, wherein the superconducting wire comprises a superconducting filament having a superconducting composition comprising magnesium diboride; heating the first end of the first superconducting wire with the second end of the second superconducting wire at a point to form a joint, wherein the superconducting filament having the superconducting composition is in continuous electrical contact with any other part of the superconducting filament after the formation of the joint.

Abstract: Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: The invention relates to dicopper(I) oxalate complexes stabilised by neutral Lewis base components and to the use thereof as precursors for the deposition of metallic copper. The neutral Lewis bases used are alkynes or alkenes containing at least one silyl or ester group, or nitrites, saturated or unsaturated nitrogen ligands, phosphites, trialkyl-phosphines or oxygen- or sulfur-containing ligands.

Abstract: The present invention provides a metal coated fiber with excellent coating strength and corrosion resistance, and a conductive resin composition with excellent conductivity. A feature of a metal coated fiber of the present invention is that following provision of a metal coating on the surface of the fiber, heat treatment is conducted at a temperature greater than the crystallization temperature but less than the melting temperature of the fiber. Gradual cooling is preferably performed following the heat treatment. Furthermore, a conductive metal coating may be provided as the metal coating, and an additional corrosion resistant metal coating then laminated onto the surface of the conductive metal coating. In addition, a feature of a conductive resin composition of the present invention is that metal coated short fibers, formed by providing a conductive metal coating on the surface of a substrate fiber formed from a synthetic resin and then conducting heat treatment, are mixed into a substrate resin.

Abstract: A photosensitive material is coated on an insulating material (13) stacked on a substrate (1) (FIG. 16A), and exposed and developed using a mask having a light-shielding film capable of controlling a light transmittance from 100% to 0% annularly and continuously to form a spiral photosensitive material (FIG. 16B). After conducting treatment at a high temperature, the insulating material under the photosensitive material is spirally formed by etching (FIG. 16C). A metal (12) is stacked on the substrate (FIG. 16D), and a photosensitive material is coated (FIG. 16E). The photosensitive material is exposed and developed using a mask having an annular light-shielding film with a light transmittance of 0% to leave the photosensitive material covering only the metal on the base of the spiral structure (FIG. 16F). After treatment at a high temperature is conducted and the metal exposed is etched (FIG. 16G), the photosensitive material is removed (FIG. 16H).

Abstract: A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract: Methods to manufacture nanoscale particles comprising metals, alloys, intermetallics, ceramics are disclosed. The thermal energy is provided by plasma, internal energy, heat of reaction, microwave, electromagnetic, direct electric arc, pulsed electric arc and/or nuclear. The process is operated at some stage above 3000K and at high velocities. The invention can be utilized to prepare nanopowders for nanostructured products and devices such as ion conducting solid electrolytes for a wide range of applications, including sensors, oxygen pumps, fuel cells, batteries, electrosynthesis reactors and catalytic membranes.

Abstract: A method of applying an edge electrode pattern to a touch screen. The method includes depositing, on a first surface of a decal strip, conductive material in the form of an edge electrode pattern, placing the first surface of the decal strip on one edge of a touch screen, applying heat and pressure to an opposite surface of the decal strip until the edge electrode pattern is transferred from the first surface of the decal strip to the touch screen; and removing the decal strip.

Abstract: An exhaust apparatus for a process apparatus which processes an object using a process gas includes an exhaust pipe to be connected to an exhaust port of the process apparatus, and a trap mechanism connected to the exhaust pipe, for removing an impurity gas contained in an exhaust gas from the process apparatus. A reaction-gas supply mechanism is provided in the exhaust pipe at an upstream of the trap mechanism, for feeding a reaction gas which is reacted with the impurity gas in to exhaust pipe to lower a vapor pressure of the impurity gas.

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Abstract: The present invention comprises a multilayer inorganic anti-reflective coating with predetermined optical properties, for application on a flexible substrate. The coating comprises a stack consisting of five material layers, whereby the third layer is a dummy layer consisting of an electrically conductive material, preferably indium-tinoxyde, which provides the coating with an adjustable electrical sheet resistance of between 25 and 2000 ?/sq without thereby influencing its optical properties. The anti-reflective coating can be applied onto a flexible substrate (e.g. a polymer film) by means of a single 12 or double pass vacuum magnetron sputtering operation.

Abstract: According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.

Abstract: Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, higher order silanes are employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition using a TiI4 precursor, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4 are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.