Abstract: The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.

Abstract: A composite surface having a thickness from 10 to 5,000 microns comprising a spinel of the formula MnxCr3?xO4 wherein x is from 0.5 to 2 and oxides of Mn, Si selected from the group consisting of MnO, MnSiO3, Mn2SiO4 and mixtures thereof which are not prone to coking and are suitable for hydrocarbyl reactions such as furnace tubes for cracking.

Abstract: A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta or TaNx film on a substrate that is heated to 300° C.-500° C. The deposited film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.

Abstract: A method for production of endless plastic hollow profiles, in particular tubes, comprises several production stages for the plastic tube and a coating stage for a metal coating. A reduced pressure is provided in the coating stage, whereby the metal is transferred into the gas phase and deposited on the tube as a surface layer homogeneously bonded thereto.

Abstract: The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

Abstract: The chemical composition of thin films is modulated during their growth. A computer code has been developed to design specific processes for producing a desired chemical composition for various deposition geometries. Good agreement between theoretical and experimental results was achieved.

Abstract: In a transparent laminate, n thin-film units (n=3 or 4) are laminated unit by unit successively on a surface of a substrate, and a high-refractive-index transparent thin film is deposited on a surface of the laminate of the n thin-film units, each of the n thin-film units consisting of a high-refractive-index thin film and a silver transparent conductive thin film. When the silver transparent conductive thin films are deposited by a vacuum dry process, the temperature T(K) of the transparent substrate at the time of film deposition is set to be in a range 340?T?410, whereby the transparent laminate having a standard deviation of visible light transmittance which is not larger than 5% in a wave range of from 450 to 650 nm can be produced.

Abstract: A bipolar plate for use with a fuel cell is provided including an electrically conductive foam as a coolant layer between thin metal foil layers. The thin metal foil layers are provided with serpentine flow field patterns on a surface thereof.

Abstract: A metallized substrate, such as used to make a resonant circuit tag with inductive and capacitive elements in series, has a thin inorganic or polymeric dielectric layer formed on a metal layer. The inorganic layer may be formed by anodizing a surface of the metal layer. The organic layer may be formed by flexographic printing. In both cases, a via hole is formed through the dielectric layer. A second layer of very thin conductive metal is deposited on the dielectric layer and in the via hole. The substrate is subsequently patterned with an etch resist and then etched to form the inductor coil and the capacitor plates, which are interconnected via the metallized via hole.

Abstract: The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

Abstract: A thin film hydrogen getter and EMI shielding are provided for protecting GaAs circuitry sealed in an hermetic package. The thin film getter comprises a multilayer metal film that is deposited by vacuum evaporation techniques onto a conductive metal, such as aluminum or copper, that serves as the EMI shielding. The conductive layer is first formed on an interior surface. The multilayer hydrogen getter film comprises (1) a titanium film and (2) a palladium film that is deposited on the titanium film. Both the titanium and the palladium are deposited during the same coating process run, thereby preventing the titanium from being oxidized. The palladium continues to prevent the titanium from being oxidized once the getter is exposed to the atmosphere. However, hydrogen is easily able to diffuse through the palladium into the titanium where it is chemically bound up, since palladium is highly permeable to hydrogen.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.

Abstract: A water-vapor-permeable, watertight, heat-reflecting flat composite is made by a process of combining a metal layer and a nonporous, water-vapor-permeable, watertight, hydrophilic flat substrate. The process includes at least the three steps of (1) selecting the substrate, (2) pre-cleaning the substrate, and (3) applying the substrate to the metal layer. Such a composite offers protection from heat loss, infrared-based detection, ultraviolet radiation, electro-smog, and static electricity.

Abstract: An improved method for providing high-quality optical fiber metallization with the required length at the required location. The method enables metallized optical fibers to be soldered and connected to mechanical components while reducing the level of stress in the metal coatings and providing strong adhesion, good conductivity and connectivity. The advantage of the method is a combination of vacuum evaporation and electroless deposition for the optical fiber metallization. A strong adhesion of the metal layer is achieved by the use of an evaporated thin metal layer, comprising an adhesion layer and a seed layer. The stress reduction is achieved due to electroless deposition, which is adequately thick for subsequent soldering/welding or other applications. The method comprises preparation for evaporation, preparation of optical fibers, evaporation of the thin metal adhesion and seed layer on the optical fiber, electroless deposition of an adequately thick metal layer, and acceptance testing.

Abstract: The invention involves tunneling tips to their conducting surface, and specifically the deposition of a monolayer of fullerene C60 onto the conducting plate surface to protect the tunneling tip from contact. The Fullerene C60 molecule is approximately spherical, and a monolayer of fullerene has a thickness of one nanometer, such that a monolayer thereby establishing the theoretical distance desired between the MEMS' tunneling tip and the conducting plate. Exploiting the electrical conductivity of C60, the tip can be accurately positioned by simply monitoring conductivity between the fullerene and the tunneling tip. By monitoring the conductivity between the tip and the fullerene layer as the tip is brought in proximity, the surfaces can be brought together without risk of contacting the underlying conducting surface.

Abstract: A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.

Abstract: A method for fabricating carbon electrode coated with a porous metal film includes the steps of: positioning a roll of carbon material within a vacuum chamber; winding the carbon material off the roll at a certain speed, winding the carbon material on a different roll while coating a porous metal to a thickness of a few Řa few &mgr;m on the carbon material between the two rolls from a metal evaporation source; and stabilizing the thusly coated carbon material under a vacuum. The coated porous metal film is of Li, Al, Sn, Bi, Si, Sb, Ni, Cu, Ti, V, Cr, Mn, Fe, Co, Zn, Mo, W, Ag, Au, Pt, Ru, Ir, In or their alloys. Since the stable film is formed on the surface of the carbon material, when the thusly coated carbon material is use for forming a cathode electrode of a secondary battery, the reversibility and high rate charging and discharging characteristics of the carbon electrode can be improved.

Abstract: In processes for coating objects, such as semiconductor wafers, with a film of metal, such as titanium metal, a metal-containing compound, such as TiCl4, is injected into a chamber containing the object and a portion of the metal-containing compound reacts to provide the film of metal on the object and a gas containing by-products, such as unreacted TiCl4 and TiClx (x<4), which is discharged out of the chamber and passed through a trap mechanism and an eliminator for the removal of the by-products out of the gas. The by-products have relatively high vapor pressures, making them difficult to trap. The Applicants have found that by adding a reagent, such as water, O2 or NH3, into the exhaust gas at a location upstream of the trap mechanism and eliminator, the reagent reacts with the by-product in the gas to produce a compound, such as TiCl4.2NH3, which has a significantly lower vapor pressure than the by-product and can be removed in the trap mechanism.

Abstract: This invention provides raw material compounds for use in CVD which contain organic ruthenium compounds as a main ingredient, the organic ruthenium compounds having two &bgr;-diketones plus one diene, one diamine or two organic ligands which are coordinated with ruthenium. In this invention, the vapor pressures of the organic ruthenium compounds are made preferable by specifying the number of the carbon atoms contained in the above &bgr;-diketones and the types of the above diene etc.

Abstract: A head chip is manufactured by disposing partition walls made of piezoelectric ceramic between a pair of opposing substrates made of a dielectric material so that the partition walls are spaced apart at a preselected interval to form channels. Inorganic conductive films are formed on a surface of one of the substrates. At least one metal film is formed on a portion of each of the inorganic conductive films. An electrode is formed on a side surface of each of the channels. Each of the electrodes is electrically connected to a respective one of the metal films via a respective one of the inorganic conductive films.

Abstract: A metal oxide electrode coated with a porous metal film, a metal oxide film or a carbon film, its fabrication method and a lithium-ion secondary battery using it are disclosed. The porous thin film of Li, Al, Sn, Bi, Si, Sb, Ni, Cu, Ti, V, Cr, Mn, Fe, Co, Zn, Mo, W, Ag, Au, Pt, Ir, Ru, carbon or their alloys are coated to a few Řa few &mgr;m, so as to remarkably improve the capacity of a battery, high rate charging and discharging characteristics and a durability characteristic. The method can be applied to a fabrication of every secondary battery.

Abstract: A photosensitive material is coated on an insulating material (13) stacked on a substrate (1) (FIG. 16A), and exposed and developed using a mask having a light-shielding film capable of controlling a light transmittance from 100% to 0% annularly and continuously to form a spiral photosensitive material (FIG. 16B). After conducting treatment at a high temperature, the insulating material under the photosensitive material is spirally formed by etching (FIG. 16C). A metal (12) is stacked on the substrate (FIG. 16D), and a photosensitive material is coated (FIG. 16E). The photosensitive material is exposed and developed using a mask having an annular light-shielding film with a light transmittance of 0% to leave the photosensitive material covering only the metal on the base of the spiral structure (FIG. 16F). After treatment at a high temperature is conducted and the metal exposed is etched (FIG. 16G), the photosensitive material is removed (FIG. 16H).

Abstract: A cover tape for the electronic-part conveyance comprises at least four laminated layers of: a substrate; at least one layer of a base coating layer and an intermediate layer, provided on the substrate; an adhesive layer, provided on the at least one layer of the coating layer and the intermediate layer; and a conductive layer formed on at least one of the rear surface of the substrate and the front surface of the adhesive layer by deposition.

Abstract: This invention provides raw material compounds for use in CVD which contain an organic iridium compound as a main ingredient, the organic iridium compound consisting of tris(5-methyl-2,4-hexanedionato)iridium. According to the CVD which uses the above raw material compounds, a pure iridium thin film and an iridium oxide thin film of excellent morphology can be produced effectively.

Abstract: The invention provides a fine pattern forming method in which a pattern interval of a resist pattern is narrowed, and a fine pattern forming material can be certainly formed on a surface of the resist pattern. In the method, a first resist layer containing a material generating acid by heating or light irradiation is coated on a substrate, is exposed through a pattern, and is developed. A developing solution is washed by a washing solution to form a first resist frame, and in a state where the washing solution is adhered to the substrate, a fine pattern forming material containing a material, which is cross-linked by the existence of acid, is coated on the substrate. Acid is generated in the first resist frame by heating or light irradiation, and the first resist frame is covered with a cross-linked layer generated on an interface between the first resist frame and the fine pattern forming material.

Abstract: A method for manufacturing a copper-clad laminate includes the steps of forming first and second metal films on first and second carriers, forming first and second copper films on the first and second metal films, forming first and second semi-cured resin layers, stacking a first assembly of the first carrier, the first metal film, the first copper film and the first semi-cured resin layer on a second assembly of the second carrier, the second metal film, the second copper film and the second semi-cured resin layer, and vacuum hot pressing the first and second assemblies so as to complete cure and integrate the first and second semi-cured resin layers.

Abstract: A substrate is coated with a conductive layer, which comprises a conductive layer of bonded ultrafine metal particles formed on the top surface thereof. The ultrafine metal particles have a diameter of 1-20 nm, and the substrate is of a flexible high polymer material. Since the conductive layer is formed by bonded layer of the ultrafine metal particles, an extremely thin layer having high conductivity can be formed. This structure enables the formation of a flexible printed circuit board with high-density interconnects or a transparent conductive film provided with both transparency and conductivity. Conventional vacuum equipments and complicated processes are not necessary for forming the conductive layer on the substrate.

Abstract: The method for producing an electrode for a lithium secondary battery, having an active material in the form of a thin film composed of an interface layer formed on a current collector and an active material layer formed on the interface layer. The method comprises the steps of: depositing the interface layer on the current collector by sputtering; and depositing the active material layer on the interface layer by vapor evaporation.

Abstract: A method for applying at least one bond coating on a surface of a metal-based substrate is described. A foil of the bond coating material is first attached to the substrate surface and then fused thereto, e.g., by brazing. The foil is often initially prepared by thermally spraying the bond coating material onto a removable support sheet, and then detaching the support sheet. Optionally, the foil may also include a thermal barrier coating applied over the bond coating. The substrate can be a turbine engine component.

Abstract: A method for forming a composite vapor-deposited film one side of which suitable for vapor-deposition on a phosphor surface of a CRT, such as a color television picture tube, has high light reflectivity, and the other side of which has a property to absorb radiant heat, and a composite vapor-deposition material suitable for vacuum deposition are disclosed. The composite vapor-deposition material has a high vapor-pressure metal envelope and a low vapor-pressure metal in the core region of the envelope. Low vapor-pressure metal powder should preferably be dispersed and held by high vapor-pressure metal powder in the core region. Vacuum deposition using this composite vapor-deposition material yields a composite deposited film having a composition comprising almost 100% of the high vapor-pressure metal formed in the initial stage of evaporation, and a composition comprising 100% of the low vapor-pressure metal formed in the final stage of evaporation.

Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

Abstract: A method for forming a composite vapor-deposited film which is suitable for the deposition on the fluorescent screen of a color television picture tube and the like and in which one side has a high light-reflectance and the other side has a property of absorbing heat rays, and a composite vapor-deposition material suitable for vacuum vapor deposition therefor are disclosed. This composite vapor-deposition material has an aluminum envelope and a low vapor-pressure metal/metalloid compound powder in the its core region. It is desirable that the low vapor-pressure metal/metalloid compound powder is dispersed and retained with aluminum in the core region.

Abstract: Ion conducting solid electrolytes are constructed from nanoscale precursor material. Nanocrystalline powders are pressed into disc structures and sintered to the appropriate degree of densification. Metallic material is mixed with 0 to 65 vol % nanostructured electrolyte powders to form a cermet mix and then coated on each side of the disc and fitted with electrical leads. The electrical conductivity of a Ag/YSZ/Ag cell so assembled exhibited about an order of magnitude enhancement in oxygen ion conductivity. As an oxygen-sensing element in a standard O2/Ag/YSZ/Ag/N2 set up, the nanocrystalline YSZ element exhibited commercially significant oxygen ion conductivity at low temperatures. The invention can be utilized to prepare nanostructured ion conducting solid electrolytes for a wide range of applications, including sensors, oxygen pumps, fuel cells, batteries, electrosynthesis reactors and catalytic membranes.

Abstract: A filter having two zones, the first zone having a low electrical conductivity and the second zone having a high electrical conductivity at electrode attachment zones due to infiltration of metal within the second zone.

Abstract: Method for fabricating a cathode in a cathode ray tube, the cathode having a cathode sleeve with a heat radiative coating layer formed on an inside wall thereof for emission of thermal electrons, the heat radiative coating layer being formed by a method including the steps of (a) coating a material of the heat radiative coating layer on a surface of a metal wire provided separately, (b) inserting the metal wire having the heat radiative coating layer coated thereon, to pass through an opening the cylindrical cathode sleeve, and (c) heating the metal wire by providing a power thereto, to deposit the material of the heat radiative coating layer coated on the metal wire on the inside wall of the cathode sleeve, whereby permitting to coat many number of cathode sleeves at a time, and to form a film of uniform composition and even thickness to enhance electron emission.

Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.

Abstract: A paste for one of a via and an external feature, such as a pad, tab, or line, of a ceramic substrate, includes at least one of titania and zirconia, and a filler material mixed with the at least one of titania and zirconia. Further, the via structure or external feature such as an input/output pad, tab, or line, includes a metallic plating thereover. A method of forming the via structure or the external feature on the ceramic substrate, includes steps of either depositing the paste in the via of the ceramic substrate or depositing the paste on the ceramic substrate, and depositing, by a dry process metallic plating, a metallic plating on the paste. The paste includes at least one of titania and zirconia for reducing residual stress without effecting the platability of the metallic plating.

Abstract: A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

Abstract: The present invention provides a copper precursor according to the formula (R3COOCR2COR1)Cu+1{L}x, where x is 1, 2 or 3 and L is a neutral ligand. The precursors in the present invention, which are low melting solids or distillable liquids with high volatility and thermal stability, can be vaporized without decomposition and used to deposit high quality copper films. The improved stability of the copper compounds in the present invention enables them to reproducibly produce selective copper films on metallic or electrically conductive surfaces.

Abstract: During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation.

Abstract: The method for producing an electrode for a lithium secondary battery, having an active material in the form of a thin film composed of an interface layer formed on a current collector and an active material layer formed on the interface layer. The method comprises the steps of: depositing the interface layer on the current collector by sputtering; and depositing the active material layer on the interface layer by vapor evaporation.

Abstract: A metal oxide electrode coated with a porous metal film, a metal oxide film or a carbon film, its fabrication method and a lithium-ion secondary battery using it are disclosed. The porous thin film of Li, Al, Sn, Bi, Si, Sb, Ni, Cu, Ti, V, Cr, Mn, Fe, Co, Zn, Mo, W, Ag, Au, Pt, Ir, Ru, carbon or their alloys are coated to a few Řa few &mgr;m, so as to remarkably improve the capacity of a battery, high rate charging and discharging characteristics and a durability characteristic. The method can be applied to a fabrication of every secondary battery.

Abstract: A process to produce magnesium diboride objects from boron objects with a similar form is presented. Boron objects are reacted with magnesium vapor at a predetermined time and temperature to form magnesium diboride objects having a morphology similar to the boron object's original morphology.

Abstract: A high-pressure vessel is allowed to be in an initial state, and a first chamber is disposed downward. Copper or copper alloy is placed in the first chamber, and SiC is set in a second chamber. The high-pressure vessel is tightly sealed, and then the inside of the high-pressure vessel is subjected to vacuum suction through a suction pipe. An electric power is applied to a heater to heat and melt the copper or copper alloy in the first chamber. At a stage at which the molten copper in the first chamber arrives at a predetermined temperature, the high-pressure vessel is inverted by 180 degrees to give a state in which SiC is immersed in the molten copper. An impregnating gas is introduced into the high-pressure vessel through a gas inlet pipe to apply a pressure to the inside of the high-pressure vessel. Thus, SiC is impregnated with the molten copper.

Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.

Abstract: The solder pre-coating method including cleaning by dry etching a surface of a gold film on a surface of an electrode formed on a circuit board by covering the surface of the circuit board with a template having an opening; adding tackiness on the surface of the electrode after cleaning by making a tackiness adding compound react with the electrode surface; attaching solder powder on the tackiness added electrode surface; and forming a solder pre-coat layer on the electrode surface by melting the solder powder by heating. Another solder pre-coating method of the present invention adds tackiness on a surface of a gold film on a surface of an electrode after forming a metal film containing one of copper or nickel on the surface of the gold film. According to the present invention, as it eliminates the need for masking work on each individual circuit board in pre-coating solder, a partially solder pre-coated circuit board can be obtained simply and at allow cost.

Abstract: A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.

Abstract: A method for producing a laminated metal ribbon comprises the steps of (a) vapor-depositing a third metal layer on at least one welding surface of a first metal ribbon 4 and a second metal ribbon 5 in a vacuum chamber 1, the third metal being the same as or different from a metal or an alloy of the first and second metal ribbons 4, 5; (b) pressure-welding the first metal ribbon 4 to the second metal ribbon 5; and (c) subjecting the resultant laminate 9 to a heat treatment for thermal diffusion.