Abstract: A pulsed laser deposition (PLD) process is used for forming a functional metal, ceramic, or ceramic/metal layer on an inner wall of a hollow body. Simultaneously with the deposition process, a thin-film laser treatment is carried out, whereby a laser beam impinges on the coating layer as it is being formed to achieve a rapid heating followed by a rapid cooling and solidification of the deposited coating layer. In this context, the energy and material flux densities are prescribed and controlled as a function of the spacing of the condensation region from the substrate surface. Laser pulses having an energy of 1 to 2 Joules and a pulse repetition rate of 10 to 50 Hz are used. The pulse duration as well as the residual gas atmosphere in the vacuum deposition chamber are controlled so that the generated plasma flux forms the desired layered grain structure, namely a glassy amorphous structure, a columnar structure, or a polycrystalline structure.

Abstract: The present invention relates to a method of forming an intermediate film and a hard cabon film over the inner surface of a cylindrical member having a bore, such as a bushing or a cylinder, with the hard carbon film being formed on the intermediate film with a uniform thickness, greatly enhancing of abrasion resistance of the inner surface. The cylindrical member is placed in a vacuum vessel, an auxiliary electrode of an intermediate film forming material, such as a titanium-silicon alloy or the like, is inserted in the bore of the cylindrical member, a sputtering gas is supplied into the vacuum vessel, a voltage is applied to the auxiliary electrode to produce a plasma around the auxiliary electrode in order that the intermediate film forming material is sputtered from the auxiliary electrode and an intermediate film is formed over the inner surface of the cylindrical member.

Abstract: A hard carbon film is formed over an inner surface of a guide bush including the steps of fixing an auxiliary electrode support member for supporting an auxiliary electrode of a jig for forming a film in a center bore of the guide bush by an auxiliary electrode insulation member, disposing an auxiliary electrode in alignment with the axis of the center bore so as to face the inner surface, disposing legs, and a first electrode plate, a second electrode plate, and the insulation member which are fixed to the legs are placed on the bottom of a vacuum vessel placing the guide bush on the first electrode plate contacted electrically with a power source, while the projection of the auxiliary electrode support member projecting out of the auxiliary electrode insulation member is contacted electrically with the second electrode plate.

Abstract: A method and apparatus for forming a thin film of ultra-fine particles on a base body having a fine hole or groove with a large aspect ratio (larger than one). The ultra-fine particles are smaller than 0.1 .mu.m in diameter and are made from evaporated material. An aerosol is formed by dispersing and floating the ultra-fine particles in a gas at a pressure higher than 10.sup.2 Pa in an aerosol-forming chamber. The base body is held by a holding mechanism within a thin-film forming container. A vacuum system is connected to the thin-film forming container. The aerosol-forming chamber is placed in communication with the thin-film forming container so that the aerosol is applied onto the inner wall surface of the fine hole or the groove. As a result, the ultra-fine particles are diffused and adsorbed onto the inner wall surface.

Abstract: A hard carbon film is formed over an inner surface of a guide bush by the steps of disposing the guide bush in a vacuum vessel, inserting an electrode into a center bore of the guide bush and applying a positive current to the electrode, introducing a gas, containing carbon, through a gas inlet port into the vacuum chamber after evacuating the vacuum vessel, and producing a plasma in the vacuum vessel to form a hard carbon film of hydrogenated amorphous carbon over the inner surface of the guide bush by a plasma CVD method.

Abstract: A method and apparatus for forced flow/thermal gradient chemical vapor infiltration (CVI) of fibrous porous structure to create a simultaneous deposition of a carbon matrix throughout the substrate.

Abstract: A method for precoating interior surfaces of a plasma CVD reactor after removal of built-up fluorinated silicon oxide residues by in-situ reactor cleaning. The deposition gas mixture includes F, Si, O and optional Ar. The interior surfaces can be precoated with fluorinated silicon oxide using a deposition gas mixture which includes 80 to 200 sccm SiF.sub.4 and 150 to 400 sccm O.sub.2 supplied to the reactor in a gas flow ratio of O.sub.2 :SiF.sub.4 of 1.4 to 3.2. The precoated film can be deposited at a high deposition rate to maintain high throughput in the reactor while providing a precoat film having low compressive stress and thus high film adhesion and low particle generation during subsequent substrate processing in the reactor.

Abstract: A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.

Abstract: An appliance is rendered self-cleaning of accumulated organic contaminants on one or more surfaces of the appliance, by coating such surfaces of the appliance with a photocatalytically-activated self-cleaning coating. Upon exposing such coated surfaces to radiation of the appropriate wavelength, for a sufficient interval of time, at least a portion of the organic contaminants present on the photocatalytically-activated self-cleaning coating are removed. The coated surface is thereby cleaned without the need of manual effort or high temperatures. The radiation is generally actinic radiation, and more particularly includes ultraviolet radiation.

Abstract: The invention relates to a process for reducing the residual hydrogen fluoride gases in a fluorinated plastic tank, in particular in a plastic tank for a motor vehicle, in which firstly the space within the tank is subjected to a fluorination step and then, in at least one gas flushing process, the reaction products of the fluorination step are removed from the plastic tank. In a process in which the undesired reaction product hydrogen fluoride is completely eliminated and which is suitable for efficient large-scale production, after the gas flushing process, a neutralization step is carried out to bind residual fluorination gases on the inner layers of the plastic tank.

Abstract: A method of manufacturing an insulating layer 30 (IMD layer) that has a uniform etch rate and forms improved via/contact opening profiles. The method forms a coating film 11 of silicon oxide over the chamber walls 22 of a CVD reactor. Next, the wafer 12 is loaded into the CVD reactor 20. A first insulating layer 30 composed of oxide preferably formed by a sub-atmospheric undoped silicon glass (SAUSG) using TEOS is formed over the semiconductor structure 12. Via/Contact Openings 32 are then etched in the insulating layer 30. The coating film 11 over the interior surfaces (e.g., reactor walls) 22 improves the etch rate uniformity of the first insulating layer 30. The first insulating layer 30 is preferably a inter metal dielectric (IMD) layer.

Abstract: The present invention relates to a method of forming an intermediate film and a hard cabon film over the inner surface of a cylindrical member having a bore, such as a bushing or a cylinder, with the hard carbon film being formed on the intermediate film with a uniform thickness, greatly enhancing of abrasion resistance of the inner surface. The cylindrical member is placed in a vacuum vessel, an auxiliary electrode of an intermediate film forming material, such as a titanium-silicon alloy or the like, is inserted in the bore of the cylindrical member, a sputtering gas is supplied into the vacuum vessel, a voltage is applied to the auxiliary electrode to produce a plasma around the auxiliary electrode in order that the intermediate film forming material is sputtered from the auxiliary electrode and an intermediate film is formed over the inner surface of the cylindrical member.

Abstract: Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

Abstract: A guide bush (11), coming in sliding contact with a workpiece, for use in an automatic lathe is placed in a vacuum vessel (61), and after inserting an auxiliary electrode (71), which is grounded or to which a positive DC voltage is applied, in the center bore (11j) of the guide bush (11), forming the inner surface (11b) thereof, the vacuum vessel (61) is evacuated such that an initially reached pressure therein is not higher than a predetermined degree of vacuum. Then, after a DC voltage is applied to an anode (79) and an AC voltage is applied to a filament (81) while applying a DC voltage to the guide bush (11), carbon-containing gas is fed into the vacuum vessel (61), producing a plasma therein and the pressure inside the vacuum vessel (61) is controlled to attain a film-forming pressure higher than the initially reached pressure while forming a hard carbon film over the inner surface of the guide bush (11) by means of a plasma CVD process.

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.

Abstract: An apparatus and method for facilitating plasma processing and in particular chemical plasma enhanced vapor deposition, plasma polymerization or plasma treatment of barrier materials onto the interior surface of containers barrier materials are useful for providing an effective barrier against gas and/or water permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A process of fabricating an optical fiber preform, preferably a multimode optical fiber preform, having a maximum refractive index along an axis of the fiber and a lower refractive index at its periphery. The process includes the following steps: depositing successive layers onto the interior of the tube with the refractive index increasing from the first, larger diameter layer to the central layer, each layer being formed from gases which react with each other inside the tube, and varying the proportions of the gases from one layer to another to vary the index. The gases are introduced into the tube at a velocity such that the radial index profile is homogenized in the longitudinal direction. This velocity is advantageously maintained substantially the same for the fabrication of all the layers. This process produces preforms having a homogeneous index profile in the longitudinal direction.

Abstract: An apparatus and a method for preventing buildup of silicon oxides and silicon carbides on the inner surface of exhaust sleeves utilized in Czochralski (Cz) silicon crystal pullers are provided. The apparatus and the method include the provision of a vapor impervious layer coated on the inner surface of an exhaust sleeve, and forming a barrier to silicon oxides and silicon carbides deposition on the inner surface, to prevent the buildup of silicon oxides and silicon carbides on the surface of exhaust sleeves, thereby allowing more uniform laminar flow of process gases in the Cz chamber and the exhaust sleeve, and extending the useful lifetime of exhaust sleeves.

Abstract: A process and a device for producing sausage casings which bear a coating of spice particles on the inside are distinguished in that the inside of the sausage casing is provided with an adhesive coating which hardens from the liquid state and the spice particles are projected against the adhesive coating while it remains adhesive. The production of the spice particle coating can be interrupted in sections, that is to say in the sections predetermined for tying off individual sausage casings.

Abstract: The invention is a method and device for sealing leaks remotely by means of injecting a previously prepared aerosol into the enclosure being sealed according to a particular sealing efficiency defined by the product of a penetration efficiency and a particle deposition efficiency. By using different limits in the relationship between penetration efficiency and flowrate, the same method according the invention can be used for coating the inside of an enclosure. Specifically the invention is a method and device for preparing, transporting, and depositing a solid phase aerosol to the interior surface of the enclosure relating particle size, particle carrier flow rate, and pressure differential, so that particles deposited there can bridge and substantially seal each leak, with out providing a substantial coating at inside surfaces of the enclosure other than the leak.

Abstract: A process for CVD coating of a hollow body with a barrier layer, comprising measuring the temperature inside of the body by igniting plasma within said body with at least one ignition pulse and correlating the time between the ignition pulse and a pulse of light given off by plasma ignition, and a device for carrying out such a process.

Abstract: The present invention relates to a method of forming a two-layer intermediate film over the inner surface of a cylindrical member, such as a bushing or a cylinder, with a DLC film being formed on the intermediate film with a uniform thickness by using an auxiliary electrode, greatly enhancing of abrasion resistance of the inner surface. The cylindrical member is placed in a vacuum vessel, an auxiliary electrode of a first intermediate film forming material is inserted in the bore of the cylindrical member, a sputtering gas is supplied into the vacuum vessel, keep the auxiliary electrode at ground potential or a negative DC voltage is applied to the auxiliary electrode to produce a plasma around the auxiliary electrode in order that a first intermediate film is formed over the inner surface of the cylindrical member.

Abstract: A first pre-coating film forming gas containing titanium is supplied into a process chamber in which a susceptor for supporting a wafer is located, at the same time heating the susceptor to thereby form, on the susceptor, a first pre-coating film containing titanium as a main component, and then a second pre-coating film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the pre-coating first film, a second pre-coating film containing titanium nitride as a main component. The wafer is mounted on a part of the second pre-coating film susceptor. A first film forming gas containing titanium is supplied into the process chamber, at the same time heating the susceptor to thereby form, on the wafer, a first film containing titanium as a main component, and then a second film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the first film on the wafer, a second film containing titanium nitride as a main component.

Abstract: A hard carbon film is formed in a vacuum vessel directly or through an intermediate layer for enhancing adhesion over an inner surface of a guide bush with a uniform thickness and excellent adhesion wherein the inner surface is in sliding contact with a workpiece and the guide bush is mounted on an automatic lathe for holding the workpiece rotatably and slidably in the axial direction near a cutting tool. Accordingly, the method comprises disposing the guide bush in a vacuum vessel, inserting an auxiliary electrode into the center bore forming the inner surface of the guide bush to be at a ground potential, introducing a gas containing carbon into the vacuum vessel through the gas inlet port after evacuating the vacuum vessel, and applying a DC voltage to the guide bush through a reactor, thereby producing a plasma in the vacuum vessel so that a hard carbon film of hydrogenated amorphous carbon is formed over the inner surface of the guide bush by a plasma CVD method.

Abstract: A method and apparatus is provided to coat the internal surfaces of a hollow article having gas flow passages by supplying a coating gas to the passages with the coating gas flow rate to at least two of the passages controlled to a different rate to deposit a coating of desired thickness on the internal surfaces of each passage.

Abstract: An auxiliary electrode which is to be connected to a ground potential or applied with a positive DC voltage is disposed in a center bore which forms an inner surface of a guide bush, and a ringlike dummy member made of a conductive material having an internal diameter equal to or larger than the diameter of the center bore of the guide bush with its both ends having a different diameter is placed on an end face of the guide bush opening the inner surface thereof so that one end having the smaller diameter contacts the end face of the guide bush with its center in alignment with the central axis of the center bore. A DLC film is formed over an inner surface of a guide bush which is in sliding contact with a workpiece held in the guide bush by disposing the guide bush in a vacuum vessel after evacuating the vessel and introducing a gas containing carbon, producing a plasma in a vacuum vessel by applying a DC voltage or a radio frequency power to the guide bush by the plasma CVD process.

Abstract: A brick which can be laid with other similar bricks for forming a heat-insulating masonry work structure. The brick includes a plurality of webs defining empty inner cavities therebetween, the cavities having heat-insulating properties and further defining inner surfaces and a width of more than 8 mm. A heat-reflecting coating is disposed on the inner surfaces of the cavities. The masonry work structure may include a brick laying material for laying the bricks such that the bricks do not fill with the material and do not clog up with dirt, the brick laying material including one of bonding mortar, thin-bed mortar, mid-bed mortar and fibrous mortar. The coating may be applied to the inner surfaces of the cavities by one of vapor deposition, spraying and bonding on as a thin film, and may further be fired. The coating may further be sprayed, coextruded and spread and thereafter fired.

Abstract: A plastic vessel has a barrier coating comprising sequentially arranged barrier layers of organic polymer and of inorganic oxides, nitrides or oxynitrides. The barrier coating preferably has at least two inorganic barrier layers. The thickness of the inorganic barrier layers lies between 2 and 300 nm and the thickness of the organic barrier layer lies between 2 and 1000 nm. The total thickness of the layer packet should not exceed 0.1 mm.

Abstract: A polymeric material of at least two layers and having at least one fluorine-containing layer and at least one non-fluorine-containing layer, the fluorine-containing layer is from 0.01 to 100 .mu.m thick, contains from 0.1 to 0.76 g of fluorine/g of the fluorine-containing layer and has from 361 .mu.g to 50 mg of fluorine/cm.sup.2. The polymeric material is used for the production of storage containers, in particular for fuel.

Abstract: A cylindrical member having a center bore is disposed in a vacuum vessel provided with a gas inlet port and a gas outlet port, and an auxiliary electrode is inserted into the center bore of the cylindrical member along the central axis thereof so as to extend to substantially an entire length of the center bore, thereby permitting the auxiliary electrode to be grounded or having a positive DC voltage applied to the auxiliary electrode. A gas containing carbon is supplied into the vacuum vessel through the gas inlet port after the vacuum vessel is evacuated and a voltage is applied to the cylindrical member to produce a plasma in the vacuum vessel including an inside of the center bore of the cylindrical member, thereby forming a hard carbon film over the inner surface of the cylindrical member by a plasma CVD process.

Abstract: Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12), and then the wafer (14) is fed into the pre-coated reaction chamber (12) to form the HSG-Si film in the state that impurities on the wafer (14) have been removed. By pre-coating the silicon films, the impurities such as water, oxygen, hydrocarbon and organic materials can be removed, and a surface area increase rate of the HSG-Si film formed on the wafer (14) can be improved.

Abstract: A method and apparatus for minimizing excess aluminum deposition that can build up inside a substrate processing chamber during an aluminum CVD substrate processing operation. The method of the present invention periodically introduces nitrogen into the processing chamber after aluminum CVD processing of at least a single wafer in order to minimize unwanted aluminum accumulation in various parts of the chamber. According to one embodiment, the present invention provides a method of minimizing excess metal deposition inside a substrate processing chamber after a substrate processing operation. The method includes the steps of introducing a nitrogen-containing passivating gas into a chamber after the substrate processing operation, and maintaining at least a portion of the chamber at a second temperature during the introducing step thereby reducing excess metal build up within the chamber. In preferred embodiments, the method is performed after removal of the substrate from the processing chamber.

Abstract: An elemental titanium-free liner and cavity cleansing process is provided that allows for the elimination of conventional sputter etch and elemental titanium depositions. A low power plasma etch provides for pre-conditioning/cleansing of cavities such as contacts and vias. A refractory metal is provided as a cavity liner. Preferably, the liner is comprised of several discrete refractory metal liner layers, each having a thickness of about 25-100 .ANG., that can be applied by CVD and/or PVD. A low power plasma cleanse is preferably interposed between each liner layer deposition. A suitable metal plug can be deposited and directed into the cavity to complete cavity filling. Preferably, the metal plug is an elemental aluminum or aluminum alloy plug that is deposited by CVD and force-filled into the cavity to reduce the incidence of micro-voids within the cavity.Elimination of the conventional sputter etch and the high temperature processing (temp..gtoreq..sup..about. 400.degree. C.

Abstract: A method of inhibiting deposition of material on a wall of a chemical vapor deposition reactor includes providing a chemical vapor deposition reactor having a wall which has an inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber; forming a first material atop the inside facing surface; positioning a substrate in the chemical vapor deposition reactor chamber, the substrate having an outer surface; and chemical vapor depositing a second material layer on the substrate in a manner which is selective to the substrate outer surface, and not the first material, thereby restricting deposition of the second layer on the reactor inside facing surface.

Abstract: A process for creating a SiOx barrier layer on the interior wall of a container is disclosed in the present invention. A gas mixture consisting of an organosilicon precursor gas, an oxidizer gas and a carrier gas is introduced into a polymeric container. The gas mixture is then irradiated with ultraviolet light to create a reaction within the container. The reacted gas then coats the interior wall of the container with a SiOx barrier layer. The remainder of the gas mixture is then purged from the container. The gas mixture may also be utilized to blow mould a container. The polymeric container may be composed of polyethylene, polypropylene, copolymers of polypropylene, copolymers of polyethylene, polyethylene terphthalate, copolymers of polyethylene terphthalate or mixtures thereof. An excimer ultraviolet lamp is preferred to irradiate the gas mixture inside of the container. The process may be performed at a station on a manufacturing line, or at an off-line site.

Abstract: An apparatus for manufacturing a plastic container coated with carbon film, which comprises: an external electrode having a hollow space approximately similar to an external shape of the container which is accommodated in the hollow space; an insulating member for insulating the external electrode, a mouth of the container abutting against the insulating member when the container is accommodated in the hollow space of the external electrode; an internal electrode inserted through the mouth of the container into the container accommodated in the hollow space of the external electrode, the internal electrode being earthed; discharging means communicated with the hollow space of the external electrode to discharge air in the hollow space; feeding means for feeding raw gas into the container accommodated in the hollow space of the external electrode; and a high frequency electric source connected to the external electrode.

Abstract: The present invention discloses an improved process for producing plastic containers with excellent resistance to permeation by solvents such as hydrocarbons, hydrocarbon fuels, and hydrocarbon fuels with organic additives including lower alkanols and ethers consistently and reliably. The process is related to a treatment of plastic containers in a controlled manner with fluorine containing gases while blow molding them. In the process of the present invention, an article of manufacture, a container, is formed and subjected to fluorination by exposure to a fluorination gas. After the fluorination, the container is quenched by exposing the container to a fluorine reactive gas to react with the fluorine, thereby converting the fluorine to a less reactive gas.

Abstract: Various types of articles having various deposition coatings applied using a gas vapor deposition process are provided. A system evacuates gases from the article or a deposition chamber prior to depositing a coating. The coating may be applied throughout the inside of an article or may be selectively applied to a portion of the article. The article may be moved relative to the gas jet or the gas may be moved jet relative to the article. Stencils may be used to pattern the coating on the surface of the article. The articles are coated in a pressure of approximately 5 millitorr. Articles may be cylindrically shaped, leadframes on a reel, substrates, or printed circuit boards.

Abstract: This invention relates to improvements in or relating to ceramic piezoelectric ink jet print heads of the kind having an ink channel for connection to an ink ejection nozzle and to a reservoir for the ink, and a piezoelectric wall actuator which forms part of the channel and is displaceable in response to a voltage pulse thereby generating a pulse in liquid ink in the channel due to a change of pressure therein which causes ejection of a liquid droplet from the channel. Such print heads are referred to hereafter as piezoelectric ceramic ink jet print heads.

Abstract: Methods for providing a low permeability coating on the interior of a refillable plastic container, such as a PET beverage bottle, include coating of a liquid crystal polymer (LCP) by depositing LCP monomers on the interior surface of the container and bi-axially orienting the monomers continuously while reacting the monomers to produce the polymer. The interior surface of the container may be pre-treated to produce free radicals which enhance the attachment of the monomers to the surface. Also, the surface may be post-treated to eliminate unsaturated radicals or free monomers. The application of the monomers to the interior surface of the container can be effected by condensing a gas blend of monomers, by spraying liquid monomers or by filling with liquid monomers and then emptying to leave a residual coating. The monomers are reacted by preheating them or by subjecting them to a heated inert gas.

Abstract: An apparatus and method for facilitating plasma processing and in particular chemical plasma enhanced vapor deposition, plasma polymerization or plasma treatment of barrier materials onto the interior surface of containers barrier materials are useful for providing an effective barrier against gas and/or water permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: A method is disclosed to deposit aluminum coatings on high temperature superalloys for corrosion, oxidation, and erosion protection using low temperature chemical vapor deposition and an organometallic halide precursor, specifically an aluminum alkyl halide. The process is adapted to protective coatings for turbine parts having internal passages. Due to the lower temperatures used during chemical vapor deposition, a broad range of substrate materials can be utilized. The precursor vapors clean the substrate surfaces by removing native oxides while simultaneously depositing aluminum.

Abstract: Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced.

Abstract: A treatment chamber (1) evacuable by vacuum pumps (13,13') has a mounting (26,26', . . .) bearing the hollow body (4) in the treatment chamber (1), and a line (9,9') for the admission of a process gas into the treatment chamber (1). A microwave conductor (20,20' . . .) is connected with a generator (19,19' . . .) for igniting a plasma in the area of channels formed by a sheet-metal shroud (2,2') matching the configuration of the hollow body (4). A closure (7,7') is provided through which the filler opening (6, 6') of the hollow body (4) can be closed pressure-tight, and a line (9,9') for the process gas passes through the closure.

Abstract: A method of making a gas-impermeable, chemically inert container wall structure comprising the steps of providing a base layer of an organic polymeric material; conducting a pair of reactive gases to the surface of the base layer preferably by pulsed gas injection; heating the gases preferably by microwave energy pulses sufficiently to create a plasma which causes chemical reaction of the gases to form an inorganic vapor compound which becomes deposited on the surface, and continuing the conducting and heating until the compound vapor deposit on the surface forms a gas-impermeable, chemically inert barrier layer of the desired thickness on the surface. Various wall structures and apparatus for making them are also disclosed.

Abstract: A method for producing at least a polymer surface layer on at least part of the inner surface of a hollow article that is at least partially of plastic, comprising coating said at least part of the inner surface of the hollow article by establishing a low pressure gas atmosphere within the hollow article, formin a polymerizable plasma within the article by excitation of the gas atmospher within the article by high-frequency electromagnetic energy, and allowing polymerization of the gas atmosphere to take place, whereby a polymerized coating is applied to said part of the inner surface, the gas atmospherre that forms the plasma containing a component that predominantly forms chains at sufficient speed and can be polymerized under the particular plasma conditions, and a component that forms predominantly branching or cross-linking points and can be polymerized under the particular plasma conditions.

Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.

Abstract: A method of capturing and removing contaminant particles moving within an evacuated interior region of an ion beam implanter is disclosed. The steps of the method include: providing a particle collector having a surface to which contaminant particles readily adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time.

Abstract: The substrate (10) is placed in an enclosure (12) and is heated so as to establish therein a temperature gradient such that the substrate has a higher temperature in portions that are remote from its exposed surfaces than at its exposed surfaces. A reaction gas constituting a precursor for the material to be infiltrated is admitted into the enclosure, with formation of the material being enhanced in those portions of the substrate that are at higher temperature. At the beginning of the infiltration process, and at least during the major portion thereof, substrate heating is controlled in such a manner as to maintain the temperature of its exposed surfaces at a value that is no greater than the minimum temperature for the reaction gas to deposit the material that is to be infiltrated, while portions of the substrate that are remote from its exposed surfaces are at a temperature that is greater than the minimum temperature for deposition.

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.