Abstract: Apparatus for semi-sealed diffusion of semiconductor materials includes a quartz tube with a quartz stopper at one end to facilitate the loading and unloading of semiconductor materials, the other end of the quartz tube having an inlet passage with a quartz stopcock. The stopper includes quartz pressure release valve.The process involves loading semiconductor material to be diffused into the tube with a source of diffusion. The semiconductor material, e.g., in the form of wafers, is first coated with an oxide layer. The stopper is inserted to seal the tube, the interiors being then purged with an inert gas supplied to the inlet passage which is subsequently closed prior to placing the tube in a furnace to initiate the diffusion process. After diffusion, the ampoule is quenched, the stopper removed and the tube unloaded. The oxide layer is then stripped off revealing a diffused, damage-free surface.

Abstract: A method of coating is described wherein a nickel-, cobalt- or iron-base alloy is provided with a oxidation and sulfidation-resistant coating by depositing, to a thickness greater than one micron but less than three microns, 90-97%, by weight, of a platinum group metal selected from the group consisting of platinum, palladium, rhodium, ruthenium, osmium and iridium and 3-10%, by weight, of an active metal selected from the group consisting of Y, Hf and Zr onto the alloy and subsequently aluminizing the coated substrate.

Abstract: A process to improve the corrosion resistance of an aluminum plate deposited on a substrate by the catalytic decomposition of an aluminum hydride. The process preferably involves heating at least the aluminumm plate aluminum a temperature of at least about 50.degree.C. for from about 4 to about 24 hours.

Abstract: A process of preparing a nickel secondary electron emissive conductive cong along the interior channel walls of a microchannel plate or by continuing the process of preparing a solid nickel conductor channel to provide a conductive panel and the apparatuses resulting therefrom. The microchannel plate is positioned in a heated oven, or deposition chamber, such that heated inert gases are forced through the open channels to stabilize the channel temperature. The temperature is then lowered and a nickel compound gas is mixed with the inert gas. The gas mixture is forced through the channels to decompose the microchannel plate material and deposit a thin nickel coating on the interior channel walls. If a conductive panel is desired, the process is continued until the entire channel is completely filled with nickel.

Abstract: Preparation of thin layers of tungsten or molybdenum on a highly temperature-resistant layer substrate by thermal evaporation in a high vacuum, where WO.sub.3 or MoO.sub.3, respectively, is evaporated and the layer substrate is heated so that the oxides are decomposed and a pure tungsten or molybdenum layer is deposited on the layer substrate.

Abstract: A resistor comprising a layer of material disposed on a substrate which layer contains a metal component which can be either a pure metal or a metal alloy and which has carbon inserted therein to vary the specific resistance and the temperature coefficient of the electrical resistance. The method of producing the resistor comprises providing a metal-organic compound such as nickel acetylacetonate which is evaporated and carried by a carrier gas, such as hydrogen or ammonia, to a heated substrate. When the vaporized metal-organic compound contacts the heated substrate it decomposes to provide a layer having a metal component with carbon inserted in the component. By controlling the temperature of the heated substrate and by controlling the pressure of the carrier gas, the volume percent of carbon inserted into the metal component when forming the layer can be controlled to vary both the specific resistance of the layer and the temperature coefficient of the electrical resistance.

Abstract: In the pack diffusion coating of chromium into the surface of a superalloy, the formation of undesirable oxide inclusion is reduced when the diffusion coating pack contains at least about 3% Ni.sub.3 Al. Also the formation of alpha-chromium is reduced when the pack diffusion is carried out in a retort effectively not over five inches in height. Pack aluminizing in the presence of chromium makes a very effective aluminum-and chromium-containing top coating over platinum plated or platinum coated nickel-base superalloys. Aluminized nickel can also have its aluminum attacked and at least partially removed with aqueous caustic to leave a very highly active catalytic surface. Pack diffusion can also be arranged to simultaneously provide different coatings in different locations by using different pack compositions in those locations. An aluminizing pack containing a large amount of chromium provides a thinner aluminized case than an aluminizing pack containing less chromium, or less chromium and some silicon.

Abstract: Aluminum coatings to reduce corrosion of steels and the like, are very effective when applied by pack diffusion below 1000.degree.F using a retort cup not over fifteen inches high, with anhydrous or hydrated energizer in a layer on top of the pack and out of contact with the workpieces. Such diffusion coatings are more uniform than corresponding coatings made with the pack energizer in a set of porous containers imbedded in the pack, even when using a retort not over 15 inches high and the porous containers are grouped together separately from all the workpieces. Keeping workpieces away from above and below the porous containers helps. Aluminum diffusion can also be effected from continuous coatings of leafing-type aluminum particles and such leafing coatings in very thin layers are more effective than coatings of non-leafing aluminum, with or without diffusion.

Abstract: This invention is addressed to a process for the diffusion coating of metals which are capable of forming a compound or a solid solution with boron by contacting the metal with boron at a temperature greater than 1350.degree.F.