Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

Abstract: A chemical vapor infiltration (CVI) method for densifying at least one porous component includes placing the at least one porous component inside a crucible, bringing temperature inside the crucible to a value adapted to densify the porous component to transform it into a densified component, bringing pressure inside the crucible between 0.1 KPa and 25 KPa, once operational temperature and pressure are reached, flowing gas inside the crucible, gas being suitable for densifying the porous component to transform it into a densified component, and keeping an oxidizing environment outside the crucible, the external environment lapping against the crucible. The crucible is provided of at least one material having thermal conductivity greater than 30 W/mK from room temperature to at least 1000° C.

Abstract: Methods for depositing inorganic particles including titanium carbonitride on a metal substrate via chemical vapor deposition (CVD). In some embodiments, the CVD process may be supplied by two or more source gasses that react to form the inorganic particles. At least one of the sources gases includes a titanium source gas. And a source of carbon and nitrogen may be (a) a single source gas including a carbon and nitrogen source gas with a heat of formation energy that is less than 65.9 kilojoules per mole and/or (b) two source gases including a carbon source gas with a gas molecule having a carbon-nitrogen single bond and a nitrogen source gas. In some embodiments, the CVD process may be supplied by a source gas including a metalorganic compound to form the inorganic particles. In some embodiments, the CVD process may be supplied by an aluminum-containing metalorganic reducing agent.

Abstract: The present invention concerns a turbine part comprising a substrate made of nickel-based monocrystalline superalloy, comprising chromium and at least one element chosen among rhenium and ruthenium, the substrate having a ?-?? phase, an average mass fraction of rhenium and of ruthenium greater than or equal to 4% and an average mass fraction of chromium less than or equal to 5% and preferably less than or equal to 3%, a sub-layer covering at least a part of a surface of the substrate, characterised in that the sublayer has a ?-?? phase and an average atomic fraction of chromium greater than 5%, of aluminium between 10% and 20% and of platinum between 15% and 25%.

Abstract: A particulate material having a body including a dopant contained in the body, the dopant is non-homogenously distributed throughout the body and the body has a maximum normalized dopant content difference of at least 35%.

Abstract: Embodiments of the present technology may include a tubular product for oilfield applications. The tubular product may include a tubular substrate, which may include a ferrous alloy. The tubular substrate may have an inner surface characterized by an inner diameter and an outer surface characterized by an outer diameter. The tubular product may also include a first layer deposited over at least one of the inner surface or the outer surface. The first layer may include aluminum. The tubular product may further include a second layer, which may include aluminum oxide formed by micro arc oxidation of a portion of the first layer.

Abstract: A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.

Abstract: The present invention provides a method for the fabrication of a steel sheet with a completely martensitic structure which has an average lath size of less than 1 micrometer and an average elongation factor of the laths is between 2 and 5. The elongation factor of a lath is defined as a maximum dimension 1max divided by and a minimum dimension 1max. The steel sheet has a yield stress greater than 1300 MPa and a mechanical strength greater than (3220(C)+958) megapascals. A composition of a semi-finished steel product includes, expressed in percent by weight, is, 0.15%?C?0.40%, 1.5%?Mn?3%, 0.005%?Si?2%, 0.005%?Al?0.1%, 1.8%?Cr?4%, 0%?Mo?2%, whereby: 2.7%?0.5 (Mn)+(Cr)+3(Mo)?5.7%, S?0.05%, P?0.1%, optionally: 0%?Nb?0.050%, 0.01%?Ti?0.1%, 0.0005%?B?0.005%, 0.0005%?Ca?0.005%. The semi-finished product is reheated to a temperature T1 in the range between 1050° C. and 1250° C., then subjected to a roughing rolling at a temperature T2 in the range between 1000 and 880° C.

Abstract: A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-cont

Abstract: Unique and improved chromizing processes are disclosed. The processes involve forming localized chromizing coatings onto selected regions of a substrate. The chromium diffusion coatings are locally applied to selected regions of substrates in a controlled manner, in comparison to conventional chromizing processes, and further in a manner that produces less material waste and does not require diffusion-stop-off masking. Prior to or after a localized slurry chromizing process of the present invention, a layer of a platinum-group-metal (PGM) is applied to produce a PGM-modified chromium diffusion coating onto selected regions of a substrate. A second coating can be selectively applied onto other regions of the substrate.

Abstract: A process for forming a diffusion coating on a substrate is disclosed, including preparing a slurry including a donor metal powder, an activator powder, and a binder, and applying the slurry to the substrate. The slurry is dried on the substrate, forming a slurry layer on the substrate. A covering composition is applied over the slurry layer, and the covering composition is dried, forming at least one covering layer enclosing the slurry layer against the substrate. The slurry layer and the at least one covering layer are heated to form the diffusion coating on the substrate, the diffusion coating including an additive layer and an interdiffusion zone disposed between the substrate and the additive layer.

Abstract: A method for coating a turbine blade of a gas turbine is disclosed. The method includes applying a lacquer coat to a region of the turbine blade, where the lacquer coat includes chromium particles and/or chromium alloy particles, halides, and a binding agent. The method further includes drying the applied lacquer coat at a temperature between 50° C. and 600° C. with disintegration of the binding agent and subsequent reactive connection at a temperature between 900° C. and 1160° C.

Abstract: A method for vapor phase deposition of a metal coating onto parts made of superalloys, which includes arranging the parts in a chamber in a presence of grains of a donor of the coating metal and an activator capable of together forming a halide of the coating metal, and heating the chamber under an inert gas or reducing gas atmosphere to a temperature at which the coating metal halide reacts with the alloy of the parts. A bed of the grains is arranged on the bottom of at least one box, then a mounting for the parts is placed on the bed of grains, the mounting including support columns that keep the parts separate from the bed of grains, and the gas is injected into the box, when the box is closed, via a side located above the bed of grains.

Abstract: Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.

Abstract: An arrangement for vapor phase coating an internal surface of hollow articles comprises a part plate, at least one spud site and at least one manifold. The part plate defines a portion of a chamber for supplying a vapor coating. Each spud site has a tube and a first moldable sealant is arranged around the tube. Each manifold has at least one supply tube extending from the manifold to supply vapor into a respective hollow article. Each manifold has a feed tube extending from the manifold to supply vapor into the manifold. The tube of each spud site is inserted into the feed tube of the respective manifold and an end of the feed tube remote from the manifold locates in the first moldable sealant. A second moldable sealant is arranged around the at least one supply tube of the respective manifold and between the respective manifold and hollow article.

Abstract: Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.

Abstract: A metal pivot pin for a timepiece movement includes at least one pivot at at least one of ends thereof, the metal is an austenitic steel, an austenitic cobalt alloy or an austenitic nickel alloy to limit sensitivity of the pin to magnetic fields, and at least an outer surface of the at least one pivot is hardened to a predetermined depth relative to a core of the pin. A method of fabricating a pivot pin includes forming the pivot pin from a base of austenitic steel, an austenitic cobalt alloy or an austenitic nickel alloy, to limit sensitivity of the pin to magnetic fields, including at least one pivot at one end of the pin, and diffusing atoms to a predetermined depth at least on an outer surface of said at least one pivot to harden the pivot in main areas of stress while maintaining a high roughness.

Abstract: A method of forming a metallic wetting layer on the surface of a metal component is provided, including the steps of placing the component into a chemical vapor deposition furnace, placing a metal-containing salt in the furnace, and heating the component and the metal-containing salt in the furnace to cause the metal from the metal-containing salt to deposit in a coating on the surface of the component forming a metallic wetting layer that improves the metallic bond of a subsequently applied brazing material. The process can be practiced with the addition of a cleaning reagent to both clean and coat in one operation.

Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.

Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Abstract: Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.

Abstract: A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2 to 12 of the Periodic Table, As, Sb, Bi, Se, and Te.

Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.

Abstract: The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as Z?O (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at

Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Abstract: Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.

Abstract: Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract: The turbine parts, when they are used, form oxide layers which by the undesirable rapid growth thereof generate the damage of the parts substrate. The inventive method consists in depleting the part in an element in such a way that the oxide layer is reduced.

Abstract: A mixture and technique for coating an internal surface of an article is generally described. In one aspect, a method includes introducing a mixture comprising an aluminum source and an organo halocarbon activator into an internal cavity of an article. In some embodiments, the method may further include heating the article and the mixture to a temperature sufficient to form an aluminum halide, which deposits on a surface of the internal cavity to form a coated article. In further embodiments, the method may also include depositing on an external surface of the article a first layer comprising Pt, Si, and a reactive element selected from the group consisting of Hf, Y, La, Ce, Zr, and combinations thereof, and depositing a second layer comprising Al on the first layer to form an alloy including a ?-Ni+??-Ni3Al phase constitution, where the second layer is deposited with the organo halocarbon activator.

Abstract: The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.

Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Abstract: A method for producing a coating made of metal or a metal alloy on a substrate (1) using a diffusion process is disclosed, in which the substrate undergoes a heat treatment in an atmosphere (4), wherein the atmosphere includes at least one metal halide of the to-be-deposited metal or the metal alloy and wherein, in addition, the substrate is provided at least partially with a layer (2, 3), which includes at least one metal halide in solid and/or liquid form, which preferably has the same constituent parts as the metal halide of the atmosphere. Furthermore, the present invention relates to a chromium coat, which was produced in particular with the method according to the invention and has a chromium proportion of ?30% by weight in a diffusion zone in the coated substrate.

Abstract: The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as Z?O (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at

Abstract: This invention introduces a method for treating a surface of an electrically conductive object with a refractory metal. In one embodiment, the refractory metal is tantalum and the object is a titanium substrate. A surface layer of mixed tantalum and titanium oxides is created by first heating the object and tantalum chloride in a reaction chamber and subsequently heat treating the object in an oxygen containing environment. The electrically conductive object can in a non-limiting way be DSA solutions (Dimensionally Stable Anodes), fuel cells or connector plates.

Abstract: Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber.

Abstract: Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber.

Abstract: A method for forming a protective coating containing aluminum on the surface of a metal part, wherein the part is contacted with a carburizer made of an aluminum alloy, at a treatment temperature and in a chamber, the atmosphere of which contains an active gas which reacts with the carburizer to form a gaseous aluminum halide, which decomposes upon contacting the part while depositing aluminum metal thereon. In the method the aluminum alloy of the carburizer includes at least one element, zirconium and/or hafnium, the active gas reacting with the carburizer to also form a halide of the reactive element which decomposes upon contacting the part while depositing the element thereon at the same time as the aluminum.

Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.

Abstract: In a method for forming a Cu film, a wafer (W) is loaded into a chamber 1. Then, Cu(hfac)TMVS as a monovalent Cu ?-diketone complex and a reducing agent for reducing Cu(hfac)TMVS are introduced into the chamber 1 in a vapor state. Thus, a Cu film is formed on the wafer (W) by CVD.

Abstract: Systems and methods for providing localized heat treatment of metal components are provided. In this regard, a representative method includes: identifying a portion of a metal component to which localized heat treatment is to be performed; shielding an area in a vicinity of the portion of the metal component; and directing electromagnetic energy in the infrared (IR) spectrum toward the portion of the metal component such that the portion is heated to a desired temperature and such that the area in the vicinity of the portion that is subjected to shielding does not heat to the temperature desired for the heat treatment.

Abstract: The invention utilizes a metal halide generating reactor that permits the temperature of the generation of a metal halide from a gaseous halide compound, a halogen gas, or an interhalogen compound at controlled temperatures distinctly different from controlled temperatures of a deposition furnace where metal layers are deposited by CVD processes upon substrates. The method may be further expanded to provide additional layers or reactions on the surface of the substrates with secondary reactions between reactive gases or between species of a metal halide different from the first deposition. Metal halide gases may for example be generated at successive temperatures and with successive different halogen gases or compounds.

Abstract: A reaction vessel (reactor) is shown that, filled with metal and placed either within a CVD type furnace or in a housing in fluid communication with the CVD type furnace can produce commercial quantities of a metal halide gas over extended time periods and multiple furnace runs. The control of temperature and the simplicity of this reaction vessel allows temperature differentials between the metal halide gas produced and the CVD type reactor target thus providing differing deposits. The reactor is noteworthy in that no valves, flow restrictors or other equipment which could create corrosion problems is used in the heated/reactive area of the vessel thus producing very high quality metal halide gas.

Abstract: A turbine engine component (10) with a protective aluminide coating (14) that include additions of silicon and a dopant, such as yttrium and/or hafnium, in an amount effective to reduce sulfidation and a deposition process for forming such aluminide coatings (14). A silicon-containing layer (30) may be applied to the superalloy substrate (12) of the component (10) and the aluminide coating (14) formed by exposing component (10) and layer (30) to a vapor phase reactant containing the dopant. The aluminide coating (14), which contains dopant from the layer (30), may operate as a standalone environmental coating or as a bond coating for an optional ceramic thermal barrier layer (24). An optional zirconia layer (26) maybe provided between the aluminide coating (14) and the ceramic thermal barrier layer (24).

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.

Abstract: Aimed at suppressing roughening in a circumferential portion of a layer to be etched in the process of removing a hard mask formed thereon, an etching apparatus of the present invention has a process chamber, an electrode, a stage, and a shadow ring, wherein the process chamber allows an etching gas to be introduced therein; the electrode is disposed in the process chamber, and is used for generating plasma by ionizing the etching gas; the stage is disposed in the process chamber, onto which a substrate is disposed; the shadow ring has an irregular pattern on the inner circumferential edge thereof, and is disposed in the process chamber and placed above the stage 30, so as to cover a circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner.

Abstract: To protect a base metal layer (1) against high-temperature corrosion and high-temperature erosion, an adhesive layer (3) based on MCrAlY is applied to the base metal layer (1). The adhesive layer (3) is coated with an Al diffusion layer (4) by alitizing. The diffusion layer (4) is subjected to an abrasive treatment, so that the outer built-up layer (4.2) on the diffusion layer (4) prepared by alitizing is removed by the abrasive treatment. A ceramic heat insulation layer (2) consisting of zirconium oxide, which is partially stabilized by yttrium oxide, is applied to the diffusion layer (4) thus treated.

Abstract: An aluminization process by vapor phase deposition for high-temperature oxidation protection of a metal turbomachine part. The part including a cavity into which a metal component is introduced and assembled from an opening in the part. A halide is formed by reaction between a halogen and a metal donor containing aluminum, then the halide is transported by a carrier gas in order to come into contact with the metal part, wherein the metal component has first, before the implementation of the process, been surface-enriched with aluminum in order to serve as an aluminum donor.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.