Halogen Containing Compound Patents (Class 427/253)
  • Patent number: 10337090
    Abstract: The present invention provides a method for the fabrication of a steel sheet with a completely martensitic structure which has an average lath size of less than 1 micrometer and an average elongation factor of the laths is between 2 and 5. The elongation factor of a lath is defined as a maximum dimension 1max divided by and a minimum dimension 1max. The steel sheet has a yield stress greater than 1300 MPa and a mechanical strength greater than (3220(C)+958) megapascals. A composition of a semi-finished steel product includes, expressed in percent by weight, is, 0.15%?C?0.40%, 1.5%?Mn?3%, 0.005%?Si?2%, 0.005%?Al?0.1%, 1.8%?Cr?4%, 0%?Mo?2%, whereby: 2.7%?0.5 (Mn)+(Cr)+3(Mo)?5.7%, S?0.05%, P?0.1%, optionally: 0%?Nb?0.050%, 0.01%?Ti?0.1%, 0.0005%?B?0.005%, 0.0005%?Ca?0.005%. The semi-finished product is reheated to a temperature T1 in the range between 1050° C. and 1250° C., then subjected to a roughing rolling at a temperature T2 in the range between 1000 and 880° C.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: July 2, 2019
    Assignee: ARCELORMITTAL INVESTIGACIÒN Y DESARROLLO, S.L.
    Inventors: Kangying Zhu, Olivier Bouaziz
  • Patent number: 10290494
    Abstract: A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-cont
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: May 14, 2019
    Assignee: Kokusai Electric Corporation
    Inventors: Masanao Fukuda, Takafumi Sasaki, Kazuhiro Yuasa
  • Patent number: 10156007
    Abstract: Unique and improved chromizing processes are disclosed. The processes involve forming localized chromizing coatings onto selected regions of a substrate. The chromium diffusion coatings are locally applied to selected regions of substrates in a controlled manner, in comparison to conventional chromizing processes, and further in a manner that produces less material waste and does not require diffusion-stop-off masking. Prior to or after a localized slurry chromizing process of the present invention, a layer of a platinum-group-metal (PGM) is applied to produce a PGM-modified chromium diffusion coating onto selected regions of a substrate. A second coating can be selectively applied onto other regions of the substrate.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: December 18, 2018
    Assignee: PRAXAIR S.T. TECHNOLOGY, INC.
    Inventors: Zhihong Tang, Kevin E Garing, Thomas D Findlay, Thomas F Lewis, III, James K Knapp, Jeffrey J McConnell
  • Patent number: 10077494
    Abstract: A process for forming a diffusion coating on a substrate is disclosed, including preparing a slurry including a donor metal powder, an activator powder, and a binder, and applying the slurry to the substrate. The slurry is dried on the substrate, forming a slurry layer on the substrate. A covering composition is applied over the slurry layer, and the covering composition is dried, forming at least one covering layer enclosing the slurry layer against the substrate. The slurry layer and the at least one covering layer are heated to form the diffusion coating on the substrate, the diffusion coating including an additive layer and an interdiffusion zone disposed between the substrate and the additive layer.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: September 18, 2018
    Assignee: General Electric Company
    Inventors: Dechao Lin, David Vincent Bucci, Shan Liu, Jon Schaeffer, John Adams, Ron Hendrix
  • Patent number: 10006298
    Abstract: A method for coating a turbine blade of a gas turbine is disclosed. The method includes applying a lacquer coat to a region of the turbine blade, where the lacquer coat includes chromium particles and/or chromium alloy particles, halides, and a binding agent. The method further includes drying the applied lacquer coat at a temperature between 50° C. and 600° C. with disintegration of the binding agent and subsequent reactive connection at a temperature between 900° C. and 1160° C.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: June 26, 2018
    Assignee: MTU Aero Engines GmbH
    Inventors: Heinrich Walter, Horst Pillhoefer, Michael Strasser, Karlheinz Manier, Max Morant, Richard Lange
  • Patent number: 9890453
    Abstract: A method for vapor phase deposition of a metal coating onto parts made of superalloys, which includes arranging the parts in a chamber in a presence of grains of a donor of the coating metal and an activator capable of together forming a halide of the coating metal, and heating the chamber under an inert gas or reducing gas atmosphere to a temperature at which the coating metal halide reacts with the alloy of the parts. A bed of the grains is arranged on the bottom of at least one box, then a mounting for the parts is placed on the bed of grains, the mounting including support columns that keep the parts separate from the bed of grains, and the gas is injected into the box, when the box is closed, via a side located above the bed of grains.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: February 13, 2018
    Assignee: SNECMA
    Inventors: Gabriela Rodriguez Elizondo, Stephane Vitrac
  • Patent number: 9546419
    Abstract: Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: January 17, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Amit Khandelwal, Avgerinos V. Gelatos
  • Patent number: 9476119
    Abstract: An arrangement for vapor phase coating an internal surface of hollow articles comprises a part plate, at least one spud site and at least one manifold. The part plate defines a portion of a chamber for supplying a vapor coating. Each spud site has a tube and a first moldable sealant is arranged around the tube. Each manifold has at least one supply tube extending from the manifold to supply vapor into a respective hollow article. Each manifold has a feed tube extending from the manifold to supply vapor into the manifold. The tube of each spud site is inserted into the feed tube of the respective manifold and an end of the feed tube remote from the manifold locates in the first moldable sealant. A second moldable sealant is arranged around the at least one supply tube of the respective manifold and between the respective manifold and hollow article.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: October 25, 2016
    Assignee: ROLLS-ROYCE plc
    Inventors: Baljit S Atwal, Andrew Hewitt
  • Patent number: 9252024
    Abstract: Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: February 2, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Hyman Lam, Nicholas R. Denny, Joseph AuBuchon, Mei Chang
  • Patent number: 9182742
    Abstract: A metal pivot pin for a timepiece movement includes at least one pivot at at least one of ends thereof, the metal is an austenitic steel, an austenitic cobalt alloy or an austenitic nickel alloy to limit sensitivity of the pin to magnetic fields, and at least an outer surface of the at least one pivot is hardened to a predetermined depth relative to a core of the pin. A method of fabricating a pivot pin includes forming the pivot pin from a base of austenitic steel, an austenitic cobalt alloy or an austenitic nickel alloy, to limit sensitivity of the pin to magnetic fields, including at least one pivot at one end of the pin, and diffusing atoms to a predetermined depth at least on an outer surface of said at least one pivot to harden the pivot in main areas of stress while maintaining a high roughness.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: November 10, 2015
    Assignee: Omega S.A.
    Inventors: Cedric Von Gruenigen, Christian Charbon, Marco Verardo
  • Patent number: 9139903
    Abstract: A method of forming a metallic wetting layer on the surface of a metal component is provided, including the steps of placing the component into a chemical vapor deposition furnace, placing a metal-containing salt in the furnace, and heating the component and the metal-containing salt in the furnace to cause the metal from the metal-containing salt to deposit in a coating on the surface of the component forming a metallic wetting layer that improves the metallic bond of a subsequently applied brazing material. The process can be practiced with the addition of a cleaning reagent to both clean and coat in one operation.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: September 22, 2015
    Assignee: Aeromet Technologies, Inc.
    Inventors: David C. Fairbourn, Richard Patrick Chesnes
  • Publication number: 20150125606
    Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 7, 2015
    Inventors: Masahisa WATANABE, Hiroshi KUBOTA, Kazuaki CHIBA
  • Publication number: 20150110958
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: December 23, 2014
    Publication date: April 23, 2015
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT
  • Publication number: 20150004316
    Abstract: Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.
    Type: Application
    Filed: June 26, 2014
    Publication date: January 1, 2015
    Inventors: David Thompson, Jeffrey W. Anthis
  • Publication number: 20150004315
    Abstract: A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2 to 12 of the Periodic Table, As, Sb, Bi, Se, and Te.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 1, 2015
    Inventors: Charles H. Winter, Joseph Peter Klesko
  • Patent number: 8871303
    Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: October 28, 2014
    Assignees: Hitachi Metals, Ltd., Tekna Plasma Systems Inc.
    Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Patent number: 8815342
    Abstract: The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as Z?O (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: August 26, 2014
    Assignee: SNECMA
    Inventors: Justine Menuey, Andre Hubert Louis Malie
  • Publication number: 20140193289
    Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.
    Type: Application
    Filed: March 18, 2013
    Publication date: July 10, 2014
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Tze-Lung CHEN, Hsin-Tien CHIU, Chi-Young LEE
  • Publication number: 20140112824
    Abstract: Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
    Type: Application
    Filed: October 21, 2013
    Publication date: April 24, 2014
    Inventors: David Thompson, Srinivas Gandikota, Xinliang Lu, Wei Tang, Jing Zhou, Seshadri Ganguli, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Shih Chung Chen
  • Patent number: 8703237
    Abstract: Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: April 22, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hye-young Park, Sung-lae Cho, Jin-il Lee, Do-hyung Kim, Dong-hyun Im
  • Publication number: 20140106083
    Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
    Type: Application
    Filed: August 15, 2013
    Publication date: April 17, 2014
    Applicant: Applied Materials, Inc.
    Inventors: KAI WU, Kiejin Park, Sang Ho Yu, Sang-Hyeob Lee, Kazuya Daito, Joshua Collins, Benjamin C. Wang
  • Patent number: 8518485
    Abstract: The turbine parts, when they are used, form oxide layers which by the undesirable rapid growth thereof generate the damage of the parts substrate. The inventive method consists in depleting the part in an element in such a way that the oxide layer is reduced.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: August 27, 2013
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rene Jabado, Daniel Körtvelyessy, Ralph Reiche, Michael Rindler
  • Patent number: 8501273
    Abstract: A mixture and technique for coating an internal surface of an article is generally described. In one aspect, a method includes introducing a mixture comprising an aluminum source and an organo halocarbon activator into an internal cavity of an article. In some embodiments, the method may further include heating the article and the mixture to a temperature sufficient to form an aluminum halide, which deposits on a surface of the internal cavity to form a coated article. In further embodiments, the method may also include depositing on an external surface of the article a first layer comprising Pt, Si, and a reactive element selected from the group consisting of Hf, Y, La, Ce, Zr, and combinations thereof, and depositing a second layer comprising Al on the first layer to form an alloy including a ?-Ni+??-Ni3Al phase constitution, where the second layer is deposited with the organo halocarbon activator.
    Type: Grant
    Filed: October 2, 2008
    Date of Patent: August 6, 2013
    Assignee: Rolls-Royce Corporation
    Inventors: George Edward Creech, Randall Jay Cupp
  • Publication number: 20130174982
    Abstract: The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 11, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Su-Horng Lin, Lin-Jung Wu, Chi-Ming Yang, Chin-Hsiang Lin
  • Patent number: 8481118
    Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: July 9, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Kenric T. Choi, James D. Felsch, Jacob Grayson, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington, Nyi O. Myo
  • Publication number: 20130149551
    Abstract: A method for producing a coating made of metal or a metal alloy on a substrate (1) using a diffusion process is disclosed, in which the substrate undergoes a heat treatment in an atmosphere (4), wherein the atmosphere includes at least one metal halide of the to-be-deposited metal or the metal alloy and wherein, in addition, the substrate is provided at least partially with a layer (2, 3), which includes at least one metal halide in solid and/or liquid form, which preferably has the same constituent parts as the metal halide of the atmosphere. Furthermore, the present invention relates to a chromium coat, which was produced in particular with the method according to the invention and has a chromium proportion of ?30% by weight in a diffusion zone in the coated substrate.
    Type: Application
    Filed: December 12, 2012
    Publication date: June 13, 2013
    Inventor: MTU Aero Engines GmbH
  • Publication number: 20130122198
    Abstract: The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as Z?O (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at
    Type: Application
    Filed: July 8, 2011
    Publication date: May 16, 2013
    Applicant: SNECMA
    Inventors: Justine Menuey, Andre Hubert Louis Malie
  • Patent number: 8431191
    Abstract: This invention introduces a method for treating a surface of an electrically conductive object with a refractory metal. In one embodiment, the refractory metal is tantalum and the object is a titanium substrate. A surface layer of mixed tantalum and titanium oxides is created by first heating the object and tantalum chloride in a reaction chamber and subsequently heat treating the object in an oxygen containing environment. The electrically conductive object can in a non-limiting way be DSA solutions (Dimensionally Stable Anodes), fuel cells or connector plates.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: April 30, 2013
    Assignee: Tantaline A/S
    Inventors: Bo Gillesberg, Soeren Eriksen
  • Patent number: 8425979
    Abstract: Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: April 23, 2013
    Assignee: United Technologies Corporation
    Inventors: Frank J. Trzcinski, Jorge Marxuach
  • Publication number: 20130029043
    Abstract: Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber.
    Type: Application
    Filed: July 25, 2011
    Publication date: January 31, 2013
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: Frank J. Trzcinski, Jorge Marxuach
  • Publication number: 20120177823
    Abstract: A method for forming a protective coating containing aluminum on the surface of a metal part, wherein the part is contacted with a carburizer made of an aluminum alloy, at a treatment temperature and in a chamber, the atmosphere of which contains an active gas which reacts with the carburizer to form a gaseous aluminum halide, which decomposes upon contacting the part while depositing aluminum metal thereon. In the method the aluminum alloy of the carburizer includes at least one element, zirconium and/or hafnium, the active gas reacting with the carburizer to also form a halide of the reactive element which decomposes upon contacting the part while depositing the element thereon at the same time as the aluminum.
    Type: Application
    Filed: September 20, 2010
    Publication date: July 12, 2012
    Applicants: ONERA, SNECMA
    Inventors: Jerome Brossier, Justine Menuey, Annie Pasquet, Serge Naveos, Marie Pierre Bacos, Pierre Josso
  • Publication number: 20120070578
    Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.
    Type: Application
    Filed: May 28, 2010
    Publication date: March 22, 2012
    Applicants: TEKNA PLASMA SYSTEMS, INC., HITACHI METALS, LTD.
    Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
  • Publication number: 20120040085
    Abstract: In a method for forming a Cu film, a wafer (W) is loaded into a chamber 1. Then, Cu(hfac)TMVS as a monovalent Cu ?-diketone complex and a reducing agent for reducing Cu(hfac)TMVS are introduced into the chamber 1 in a vapor state. Thus, a Cu film is formed on the wafer (W) by CVD.
    Type: Application
    Filed: August 19, 2011
    Publication date: February 16, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuhiko KOJIMA, Kenji HIWA
  • Patent number: 7977611
    Abstract: Systems and methods for providing localized heat treatment of metal components are provided. In this regard, a representative method includes: identifying a portion of a metal component to which localized heat treatment is to be performed; shielding an area in a vicinity of the portion of the metal component; and directing electromagnetic energy in the infrared (IR) spectrum toward the portion of the metal component such that the portion is heated to a desired temperature and such that the area in the vicinity of the portion that is subjected to shielding does not heat to the temperature desired for the heat treatment.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: July 12, 2011
    Assignee: United Technologies Corporation
    Inventors: Thomas DeMichael, Michael J. Labbe
  • Publication number: 20110159210
    Abstract: The invention utilizes a metal halide generating reactor that permits the temperature of the generation of a metal halide from a gaseous halide compound, a halogen gas, or an interhalogen compound at controlled temperatures distinctly different from controlled temperatures of a deposition furnace where metal layers are deposited by CVD processes upon substrates. The method may be further expanded to provide additional layers or reactions on the surface of the substrates with secondary reactions between reactive gases or between species of a metal halide different from the first deposition. Metal halide gases may for example be generated at successive temperatures and with successive different halogen gases or compounds.
    Type: Application
    Filed: January 11, 2011
    Publication date: June 30, 2011
    Inventor: Hubert Patrovsky
  • Patent number: 7955569
    Abstract: A reaction vessel (reactor) is shown that, filled with metal and placed either within a CVD type furnace or in a housing in fluid communication with the CVD type furnace can produce commercial quantities of a metal halide gas over extended time periods and multiple furnace runs. The control of temperature and the simplicity of this reaction vessel allows temperature differentials between the metal halide gas produced and the CVD type reactor target thus providing differing deposits. The reactor is noteworthy in that no valves, flow restrictors or other equipment which could create corrosion problems is used in the heated/reactive area of the vessel thus producing very high quality metal halide gas.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: June 7, 2011
    Inventor: Hubert Patrovsky
  • Patent number: 7901739
    Abstract: A turbine engine component (10) with a protective aluminide coating (14) that include additions of silicon and a dopant, such as yttrium and/or hafnium, in an amount effective to reduce sulfidation and a deposition process for forming such aluminide coatings (14). A silicon-containing layer (30) may be applied to the superalloy substrate (12) of the component (10) and the aluminide coating (14) formed by exposing component (10) and layer (30) to a vapor phase reactant containing the dopant. The aluminide coating (14), which contains dopant from the layer (30), may operate as a standalone environmental coating or as a bond coating for an optional ceramic thermal barrier layer (24). An optional zirconia layer (26) maybe provided between the aluminide coating (14) and the ceramic thermal barrier layer (24).
    Type: Grant
    Filed: April 13, 2005
    Date of Patent: March 8, 2011
    Assignee: MT Coatings, LLC
    Inventor: David C. Fairbourn
  • Patent number: 7879396
    Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biotechnologically functional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, oxide coatings providing hydrophilicity or oxide/polyethylene glycol coatings providing hydrophilicity can be deposited by the present method, over the interior surfaces of small wells in a plastic micro-plate in order to increase the hydrophilicity of these wells. Filling these channels with a precise amount of liquid consistently can be very difficult. This prevents a water-based sample from beading up and creating bubbles, so that well can fill accurately and completely, and alleviates spillage into other wells which causes contamination.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: February 1, 2011
    Assignee: Applied Microstructures, Inc.
    Inventors: Boris Kobrin, Jeffrey D. Chinn, Romuald Nowak, Richard C. Yi
  • Patent number: 7833909
    Abstract: Aimed at suppressing roughening in a circumferential portion of a layer to be etched in the process of removing a hard mask formed thereon, an etching apparatus of the present invention has a process chamber, an electrode, a stage, and a shadow ring, wherein the process chamber allows an etching gas to be introduced therein; the electrode is disposed in the process chamber, and is used for generating plasma by ionizing the etching gas; the stage is disposed in the process chamber, onto which a substrate is disposed; the shadow ring has an irregular pattern on the inner circumferential edge thereof, and is disposed in the process chamber and placed above the stage 30, so as to cover a circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: November 16, 2010
    Assignee: NEC Electronics Corporation
    Inventor: Masahiro Komuro
  • Patent number: 7736704
    Abstract: To protect a base metal layer (1) against high-temperature corrosion and high-temperature erosion, an adhesive layer (3) based on MCrAlY is applied to the base metal layer (1). The adhesive layer (3) is coated with an Al diffusion layer (4) by alitizing. The diffusion layer (4) is subjected to an abrasive treatment, so that the outer built-up layer (4.2) on the diffusion layer (4) prepared by alitizing is removed by the abrasive treatment. A ceramic heat insulation layer (2) consisting of zirconium oxide, which is partially stabilized by yttrium oxide, is applied to the diffusion layer (4) thus treated.
    Type: Grant
    Filed: September 13, 2005
    Date of Patent: June 15, 2010
    Assignee: Man Turbo AG
    Inventors: Sharad Chandra, Norbert Czech
  • Publication number: 20090092826
    Abstract: An aluminization process by vapor phase deposition for high-temperature oxidation protection of a metal turbomachine part. The part including a cavity into which a metal component is introduced and assembled from an opening in the part. A halide is formed by reaction between a halogen and a metal donor containing aluminum, then the halide is transported by a carrier gas in order to come into contact with the metal part, wherein the metal component has first, before the implementation of the process, been surface-enriched with aluminum in order to serve as an aluminum donor.
    Type: Application
    Filed: October 3, 2008
    Publication date: April 9, 2009
    Applicant: SNECMA
    Inventors: Maxime Francois Roger Carlin, Lucie Marie Ida Lanciaux
  • Patent number: 7498059
    Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: March 3, 2009
    Assignee: ASM America, Inc.
    Inventors: Tuomo Suntola, Sven Lindfors
  • Patent number: 7485340
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: February 3, 2009
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Publication number: 20080314311
    Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
    Type: Application
    Filed: June 24, 2007
    Publication date: December 25, 2008
    Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Jacob Grayson, Kenric T. Choi, Sumedh Acharya, Sandeep Nijhawan, Olga Kryliouk, Yuriy Melnik
  • Patent number: 7429403
    Abstract: A method for introducing an inert carrier gas into a coating container used to provide a metallic coating on articles. The method includes introducing the inert carrier gas into the coating container as a plurality of carrier gas streams proximate the top of the coating container. The carrier gas streams are formed and introduced into the coating container before encountering a source material for the metallic coating, and each carrier gas stream is introduced so that the inert carrier gas at least initially moves within the coating container in a circular swirling fashion above and before encountering the source material and the article.
    Type: Grant
    Filed: August 15, 2005
    Date of Patent: September 30, 2008
    Assignee: General Electric Company
    Inventors: Gary E. Wheat, Terri K. Brown, Richard L. Schmidt, Edward J. Cove
  • Patent number: 7422769
    Abstract: A refractory, oxidation-resistant, and corrosion-resistant protective coating for application to a substrate, in particular for application to parts of turbines or aircraft propulsion engines, is described, including a spray coating made of a thermally sprayed, primarily metallic material, the coating being at least partially subjected to a thermochemical aluminum (Cr, Si) deposition process having a specifically high aluminum deposition activity after the application of the protective coating to the substrate, in such a way that the protective coating has alloy gradients of Al (Cr, Si) which increase from the substrate surface to the coating surface and isolated globulitic metal oxide particles. Furthermore, a method for manufacturing this protective coating and its use are described.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: September 9, 2008
    Assignee: Mtu Aero Engines GmbH
    Inventors: Stefan Kassner, Markus Niedermeier, Horst Pillhoefer
  • Patent number: 7390535
    Abstract: A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating is provided as a first vapor phase reactant from a receptacle coupled by a closed communication path with the reaction chamber of the CVD system and free of a carrier gas. The aluminide coating is formed by the chemical combination of the first vapor phase reactant with a second vapor phase reactant either created in situ in the reaction chamber or supplied by a carrier gas to the reaction chamber from a precursor source.
    Type: Grant
    Filed: July 3, 2003
    Date of Patent: June 24, 2008
    Assignee: Aeromet Technologies, Inc.
    Inventor: David C. Fairbourn
  • Patent number: 7344757
    Abstract: A process for the treatment or pretreatment of containers made of aluminum, aluminum-containing alloys, magnesium-containing alloys, iron-containing materials such as steel, coated iron-containing materials such as galvanized steel, or aluminum alloys, tinplate, brass or bronze, in particular the treatment or pretreatment of bags, tubs, bottles, cans, canisters, casks or tubes, wherein the process steps for the treatment or pretreatment take place at the same time as the application of the lubricant, with the agent used for the pretreatment or treatment, which also contains or is a lubricant, not essentially consisting of titanium or zirconium with fluoride and polymer, the lubricant possibly being formed first in the agent for the pretreatment or treatment or in the formation of the coating produced therefrom.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: March 18, 2008
    Assignee: Chemetall GmbH
    Inventors: Karl-Heinz Bischoff, Mats Eriksson, Norbert Kliehm, Lars Sebralla, Markus Wahren, Manfred Walter
  • Patent number: 7311942
    Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: December 25, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Cem Basceri, Donald L. Westmoreland
  • Patent number: 7294361
    Abstract: A process for gas diffusion coating of metallic components; in which a component surface which is to be coated is brought into contact with a metal halide as coating gas, to form a diffusion layer with a defined layer thickness and a defined coating metal content in % by weight in the component surface, working on the basis of a nominal concentration of the metal halide at the component surface which, at a defined coating temperature, leads to a defined coating time, wherein a first concentration, which is higher than the nominal concentration, for the metal halide is established for a first time, and at least one second concentration, which is at or below the nominal concentration, is established at the component surface for at least one second time, the first and the at least one second time being selected in such a way that their sum is shorter than the coating time with the nominal concentration. Also disclosed is a device for the process.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: November 13, 2007
    Assignee: MTU Aero Engines GmbH
    Inventors: Thomas Dautl, Markus Niedermeier, Horst Pillhoefer