Metal Coating Patents (Class 427/250)
  • Patent number: 11118263
    Abstract: A method of forming a protective coating film for halide plasma resistance includes depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process, depositing a rare-earth containing oxide layer on the seed layer via an ALD process, and exposing the rare-earth containing oxide layer to fluorine-containing plasma.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: September 14, 2021
    Inventors: Yogita Pareek, Kevin A. Papke, Emily Sierra Thomson, Mahmut Sami Kavrik, Andrew C. Kummel
  • Patent number: 10988845
    Abstract: Provided is a plated steel sheet often used as materials for vehicles, home appliances, construction and the like and, more specifically, to a plated steel sheet having a multilayer structure and a method for manufacturing the same.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: April 27, 2021
    Assignee: POSCO
    Inventors: Kyoung-Pil Ko, Kyung-Hoon Nam, Tae-Yeob Kim, Dong-Yoeul Lee, Yong-Hwa Jung, Woo-Sung Jung
  • Patent number: 10934451
    Abstract: Disclosed is a liquid polymerizable composition including a phosphine oxide or a phosphine sulphide monomer composition with mineral nanoparticles homogeneously dispersed therein, as well as its use for the preparation of a transparent polymeric material having a high refractive index and its use in the optical field.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: March 2, 2021
    Assignees: Nikon Corporation, Essilor International
    Inventors: Mathieu Feuillade, Guillaume Cantagrel
  • Patent number: 10906925
    Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
    Type: Grant
    Filed: January 20, 2020
    Date of Patent: February 2, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Jeffrey W. Anthis, David Thompson
  • Patent number: 10907097
    Abstract: The present application discloses a method of preparing quantum dots. The method includes combining a first quantum dots precursor and a second quantum dots precursor to form a first reaction mixture including a supercritical liquid medium; nucleating and growing the quantum dots from the first quantum dots precursor and the second quantum dots precursor in the first reaction mixture including the supercritical liquid medium; and forming a solid quantum dots material in the presence of the supercritical liquid medium.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: February 2, 2021
    Inventor: Zhuo Chen
  • Patent number: 10900363
    Abstract: Cladding material is applied by laser to a net-shape. A method of cladding a host component includes installing the component in a fixture. A shroud component is located against the host component adjacent a select location for the cladding. Cladding is applied to the host component to the select location and adjacent to shroud component so that the shroud component defines an edge of the cladding as applied. The edge of the cladding as defined by the shroud component defines a desired cladding profile requiring no/approximately no post-cladding processing to remove over-cladded material.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: January 26, 2021
    Inventors: Brent Ludwig, Don Mittendorf, David R. Waldman, Malak Fouad Malak
  • Patent number: 10752992
    Abstract: Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms).
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: August 25, 2020
    Inventors: Fumikazu Mizutani, Shintaro Higashi
  • Patent number: 10745430
    Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I): wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from the group consisting of hydrogen, alkyl, and trialkylsilyl; and at least one of R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 is trialkylsilyl.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: August 18, 2020
    Inventors: Shaun Garratt, Paul Williams
  • Patent number: 10679858
    Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 9, 2020
    Inventors: Dong Kyun Ko, Woo Jin Kim, Myung Soo Huh, In Kyo Kim, Keun Hee Park
  • Patent number: 10619242
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • Patent number: 10562055
    Abstract: A shadow mask having two or more levels of openings enables selective step coverage of micro-fabricated structures within a micro-optical bench device. The shadow mask includes a first opening within a top surface of the shadow mask and a second opening within the bottom surface of the shadow mask. The second opening is aligned with the first opening and has a second width less than a first width of the first opening. An overlap between the first opening and the second opening forms a hole within the shadow mask through which selective coating of micro-fabricated structures within the micro-optical bench device may occur.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: February 18, 2020
    Assignee: SI-WARE SYSTEMS
    Inventors: Mostafa Medhat, Bassem Mortada, Yasser Sabry, Sebastian Nazeer, Yasseen Nada, Mohamed Sadek, Bassam A. Saadany
  • Patent number: 10539039
    Abstract: A method of measuring temperature reached by a part, for example a turbine engine part, in operation, the method including: mechanically treating the part; oxidizing the part; and depositing a layer including a temperature indicator for indicating the temperature reached by the part in operation.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: January 21, 2020
    Inventors: Nadine Alice Helene Harivel, Sarah Hamadi
  • Patent number: 10495146
    Abstract: ZnO sputtering is performed while a rolling body is housed in a basket made of a metal wire and is rotated. By setting a ratio of a mesh size of the basket to a diameter of the rolling body in a range of 40 to 95%, fine and uniform ZnO coating can be formed on a surface of the rolling body. By using the rolling body with ZnO coating prepared in this manner in a bearing which is rotated at high speed in a high-load state, a friction coefficient can significantly be lowered in comparison with a case of no coating.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: December 3, 2019
    Inventors: Masahiro Goto, Michiko Sasaki, Akira Kasahara, Masahiro Tosa
  • Patent number: 10457834
    Abstract: The present invention provides a chromium-free coating composition having high blackening resistance and corrosion resistance, the composition comprising: 20 to 70 wt % of waterborne silane modified polyurethane; 0.5 to 5 wt % of a hardener; 0.5 to 5 wt % of a blackening inhibitor; 0.5 to 5 wt % of a corrosion inhibitor; and 0.5 to 5 wt % of a lubricant, with the balance being a solvent. The chromium-free coating composition has the effect of improving blackening resistance, corrosion resistance, alkali resistance, solvent resistance and fingerprint resistance of a steel sheet on which a coating layer comprising the composition is formed.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: October 29, 2019
    Assignees: POSCO, NOROO Coil Coatings Co., Ltd.
    Inventors: Young-Jin Kwak, Tae-Yeob Kim, Dong-Yun Kim, Yong-Jin Cho, Myoung-Hee Choi
  • Patent number: 10364490
    Abstract: The present invention provides a Cr-rich cathodic arc coating, an article in turbine blade coated with the chromizing over cathodic arc coating, and a method to produce the coating thereof. The Cr-rich cathodic arc coating in the present invention comprises a cathodic arc coating and a diffusion coating deposited atop the cathodic arc coating to enforce hot corrosion resistance. The hardware coated with the chromizing over cathodic arc coating in the present invention is reinforced with superior-hot corrosion resistance. The present invention further provides a novel method for producing the chromizing over cathodic arc coating by re-sequencing coating deposition order. The method in the present invention is efficient and cost-reducing by eliminating some operations, e.g., DHT and peening, between the cathodic arc coating and the diffusion coating. The hot corrosion resistance in the present invention results from the high Cr content in the surface of the coating.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: July 30, 2019
    Inventors: Frank J. Trzcinski, Thomas Balzano, Prentice M. Sinesi, Mark A. Livings, Michael N. Task
  • Patent number: 10350856
    Abstract: The invention relates to compositions and methods for coating a zirconium alloy cladding of a fuel element for a nuclear water reactor. The composition includes a master alloy including one or more alloying elements selected from chromium, silicon and aluminum, a chemical activator and an inert filler. The alloying element(s) is deposited or are co-deposited on the cladding using a pack cementation process. When the coated zirconium alloy cladding is exposed to and contacted with water in a nuclear reactor, a protective oxide layer can form on the coated surface of the cladding.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: July 16, 2019
    Assignee: Westinghouse Electric Company LLC
    Inventors: Peng Xu, Lu Cai
  • Patent number: 10280499
    Abstract: A composition and a coating structure applying with the same are provided. The composition includes 3 wt % to less than 15 wt % of Al, 10 wt % to less than 30 wt % of Cr, higher than 0 wt % to 15 wt % of O, higher than 0 wt % to 15 wt % of Y, and the remainder being at least one of Co or Ni.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: May 7, 2019
    Inventors: Zhong-Ren Wu, Mao-Shin Liu, Wu-Han Liu, Wei-Tien Hsiao, Ming-Sheng Leu
  • Patent number: 10260660
    Abstract: A multi-walled pipe and a method for its manufacture involves a steel sheet forming a steel source layer to which a nickel source layer is applied on at least one or both sides. A solder source layer is applied to the one nickel source layer, or one of the two, or both, nickel source layers. The multi-walled pipe is formed from a strip of the coated metal sheet by rolling. The walls of the pipe are soldered by heating. In one form, the heating takes place by radiation. In another, it takes place by induction.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: April 16, 2019
    Inventor: Sebastian Meier
  • Patent number: 10131987
    Abstract: The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: November 20, 2018
    Inventors: Ryosuke Harada, Toshiyuki Shigetomi, Kazuharu Suzuki, Shunichi Nabeya, Takayuki Sone, Akiko Kumakura
  • Patent number: 10131983
    Abstract: An apparatus and method for controlling the composition of liquid metal fed to an evaporator in a vacuum chamber used in a physical vapor deposition process.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: November 20, 2018
    Inventors: Edzo Zoestbergen, Jörgen van de Langkruis, Theodorus Franciscus Jozef Maalman
  • Patent number: 10080259
    Abstract: A three-dimensional ceramic heater, such as a cylindrical ceramic heater, is proposed in which the conductive ceramic heating element is multi-furcated into lanes at least in the folded-back sections so that the electric current tends to flow in a more uniform and hence laminar manner with the effect that the localized over heating is suppressed greatly.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: September 18, 2018
    Inventors: Takuma Kushihashi, Noboru Kimura, Kazuyoshi Tamura
  • Patent number: 10052724
    Abstract: A braze composition, brazing process, and brazed article are disclosed. The braze composition includes a MCrAlY alloy at a concentration, by weight, of between 50% and 70%, where M is selected from the group consisting of nickel, cobalt, iron, alloys thereof, and combinations thereof, and a nickel-based alloy at a concentration, by weight, of between 30% and 50%. The brazing process includes forming a braze paste, brazing the braze paste to a portion of a component, and shaping the braze paste to form a brazed article. The brazed article includes a component and a braze composition brazed to the component, the braze composition including a MCrAlY alloy at a concentration, by weight, of between 50% and 70%, where M is selected from the group consisting of nickel, cobalt, iron, alloys thereof, and combinations thereof, and a nickel-based alloy at a concentration, by weight, of between 30% and 50%.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: August 21, 2018
    Assignee: General Electric Company
    Inventors: Dheepa Srinivasan, Dayananda Narayana, Surinder Singh Pabla, Srikanth Chandrudu Kottilingam
  • Patent number: 10023749
    Abstract: A process for applying a chromium layer on a substrate, specifically a turbine engine airfoil, by contacting at least a portion of the substrate with a gaseous chromium wherein the gaseous chromium is generated from a substantially nitrogen free source.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: July 17, 2018
    Assignee: United Technologies Corporation
    Inventors: Kevin L. Collins, Michael J. Minor
  • Patent number: 9971064
    Abstract: An optical film to be arranged on a display surface is adapted so as to allow uniform application of an interlayer filler and thus also is applicable to an image display device equipped with a front plate. Preferably, such optical film is for use in an image display device. The optical film is adapted so that a relationship of the following formula (1) is satisfied: b?0.2a+1.8??(1), where a is the viscosity (Pa·s) of an interlayer filler at the time of attaching the front plate to a surface of the optical film via the interlayer filler, and b is the atomic percentage (atm %) of silicon atoms on the surface of the optical film. The atomic percentage of oxygen atoms on the surface of the optical film is at least 26 atm %.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: May 15, 2018
    Inventors: Naoki Hashimoto, Katsunori Takada, Hiroyuki Takemoto
  • Patent number: 9953984
    Abstract: Disclosed herein are methods and related apparatus for formation of tungsten wordlines in memory devices. Also disclosed herein are methods and related apparatus for deposition of fluorine-free tungsten (FFW). According to various embodiments, the methods involve deposition of multi-component tungsten films using tungsten chloride (WClx) precursors and boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing reducing agents.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: April 24, 2018
    Assignee: Lam Research Corporation
    Inventors: Michal Danek, Hanna Bamnolker, Raashina Humayun, Juwen Gao
  • Patent number: 9919493
    Abstract: An object of the present invention is to provide an electromagnetic wave penetrative metal film having high mass productivity and an extremely low attenuation rate in the electromagnetic wave penetrated through, a manufacturing method of the electromagnetic wave penetrative metal film, and a radome for a vehicle-mounted radar devices using the electromagnetic wave penetrative metal file. To achieve the object, the present invention provides an electromagnetic wave penetrative metal film composed of more than 10000 of fine metal film pieces per unit area (1 mm2) provided on a surface of a substrate through an electroless plating step, wherein fine metal film pieces adjacent to each other are electrically isolated, a manufacturing method of the electromagnetic wave penetrative metal film, and a radome for a vehicle-mounted radar devices using the electromagnetic wave penetrative metal film.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: March 20, 2018
    Assignee: Sankei Giken Kogyo Co., Ltd.
    Inventor: Shuji Yamamoto
  • Patent number: 9917247
    Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: March 13, 2018
    Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
  • Patent number: 9914404
    Abstract: A method of manufacturing a chrome plated component can include performing a two-shot (2K) molding process to form a component comprising first and second \members. A non-plateable resin can be molded to form the first member defining a front surface that defines a recess. A plateable resin can be molded to form the second member defining a back surface that defines the protrusion. The component can then be removed from its mold, where (i) an exposed surface of the second member defines a front surface of the component and (ii) the recess receives the protrusion such that the front surface of the first member is substantially flush with the back surface of the second member. An exposed surface of the second member can then be chrome plated to obtain the chrome plated component.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: March 13, 2018
    Assignee: SRG GLOBAL INC.
    Inventors: Rob Frayer, Marlon Anderson, Bill Michael Doroghazi
  • Patent number: 9896468
    Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: February 20, 2018
    Inventors: Atsushi Sakurai, Masako Hatase, Naoki Yamada, Tsubasa Shiratori, Akio Saito, Tomoharu Yoshino
  • Patent number: 9873936
    Abstract: A slurry composition for aluminizing a superalloy component is provided, wherein the slurry includes an organic binder and a solid content including at least aluminum, silicon, and at least one of hafnium or yttrium.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: January 23, 2018
    Inventor: Paul Mathew Walker
  • Patent number: 9816167
    Abstract: The invention relates to a method for the production of carbon fiber reinforced aluminum matrix composite wires by drawing carbon fibers through molten salt and molten aluminum in such a way that the molten aluminum and the molten salt are spatially separated, and the carbon fibers are drawn through first the molten salt, then the molten aluminum separated from it. The invention further relates to an apparatus for the implementation of the method.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: November 14, 2017
    Inventors: György Kaptay, Csaba Mekler, Dávid Stomp, Péter Baumli, István Budai, Koppány Levente Juhász, Dávid Szabó, József Szabó
  • Patent number: 9765445
    Abstract: A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: September 19, 2017
    Assignee: The Governors of the University of Alberta
    Inventors: Ryan Thomas Tucker, Allan Leo Beaudry, Joshua Michael LaForge, Michael Thomas Taschuk, Michael Julian Brett
  • Patent number: 9657405
    Abstract: A removable mask for a platform or a nozzle sector of a turbine engine blade, the blade or sector configured to be covered in an electrolytic deposit, the mask including a mechanism to engage on the platform and a mechanism to cover outer surfaces of the platform that are not to be covered by the electrolytic deposit.
    Type: Grant
    Filed: April 14, 2011
    Date of Patent: May 23, 2017
    Assignee: SNECMA
    Inventors: Pascal Etuve, Frederic Lagrange, Patrick Marquereau, Pascal Sainz
  • Patent number: 9623632
    Abstract: A vacuum deposition process suitable for coating discrete articles with a zinc-rich, fully alloyed layer is described. In a process step of contacting the article with metallic Zn vapor, the temperature of the article is equal to or higher than the dew point of the Zn vapor. The process results in a coating having a uniform thickness, even on less accessible surfaces. Additionally, the roughness of the steel substrate is essentially preserved. By properly engineering the surface of the substrate, coated articles can be obtained having a roughness providing for optimal paint adhesion.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: April 18, 2017
    Assignee: Umicore
    Inventors: Bruno Gay, Etienne Petit
  • Patent number: 9574264
    Abstract: In a method for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: February 21, 2017
    Inventors: Shih-Chang Liang, Wei-Chieh Huang, Chao-Nan Wei, Cuo-Yo Ni, Hui-Yun Bor
  • Patent number: 9557859
    Abstract: Method of making a touch sensor including one or more multilayer electrodes and an underlayer disposed on a substrate. The underlayer is disposed between the multilayer electrodes and the substrate. The multilayer electrodes including at least two transparent or semitransparent conductive layers separated by a transparent or semitransparent intervening layer. The intervening layer includes electrically conductive pathways between the first and second conductive layers to help reduce interfacial reflections occurring between particular layers in devices incorporating the conducting film or electrode.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: January 31, 2017
    Assignee: 3M Innovative Properties Company
    Inventors: Clark I. Bright, Nancy S. Lennhoff, Mark E. Flanzer, Dennis M. Brunner
  • Patent number: 9490211
    Abstract: A method of filling features in a dielectric layer is provided. A pure Co or pure Ru adhesion layer is deposited against surfaces of the features, wherein the adhesion layer is separated from some of the surfaces of the features of the low-k dielectric layer by no more than 10 ?. The features are filled with Cu or a Cu alloy.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: November 8, 2016
    Assignee: Lam Research Corporation
    Inventors: Lie Zhao, Artur Kolics
  • Patent number: 9347133
    Abstract: A method of depositing a ruthenium metal thin film or ruthenium oxide thin film comprising a ruthenium compound used for depositing metallic Ru or RuO2 thin film on a substrate via atomic layer deposition, and the ruthenium compound represented by Chemical Formula 1, wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: May 24, 2016
    Inventors: Jung Woo Park, Jun Young Kim, Kwang deok Lee, Whee Won Jin
  • Patent number: 9349583
    Abstract: Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: May 24, 2016
    Assignee: Samsung Electronis Co., Ltd.
    Inventors: Min-Young Park, Youn-Soo Kim, Sang-Yeol Kang, Cha-Young Yoo, Jae-Soon Lim, Jae-Hyoung Choi
  • Patent number: 9343305
    Abstract: The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. CdTe. To this end a semiconductor material is sublimated in at least one crucible 30 in order to deposit it on a substrate, e.g. a glass panel. If the crucible 30 is filled with semiconductor material (16) during the deposition and/or evaporation, the set-up time required otherwise is then eliminated. Preferably used for carrying out the method is a CSS reactor comprising a crucible, a guide for substrates and at least one lock through which the crucible can be refilled during evaporation of semiconductor material from the crucible.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: May 17, 2016
    Assignee: ANTEC SOLAR GMBH
    Inventors: Norbert Kreft, Stefan Oelting
  • Patent number: 9324606
    Abstract: A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: April 26, 2016
    Inventors: Chih-Chien Chi, Chung-Chi Ko, Mei-Ling Chen, Huang-Yi Huang, Szu-Ping Tung, Ching-Hua Hsieh
  • Patent number: 9309413
    Abstract: Disclosed are a thermal spray coating material which greatly improves corrosion resistance, as compared to conventional Al2O3 and Y2O3 crystalline coatings and Al—Y—O and Al—Zr—O amorphous thermal spray coatings, a production method of the coating material, and a coating method using the same. The thermal spray coating material has a chemical formula of Y2xZr1?xOx+2, where x ranges from 0.19 to 0.83, preferably from 0.35 to 0.69. Accordingly, it is possible to produce a coating material for use in a chamber of vacuum plasmas equipment or internal parts of the chamber can be produced, which improves the corrosion resistance of a protective coating film upon ceramic thermal spray coating and lengthens the lifespan of parts.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: April 12, 2016
    Inventors: Hyun-Kwang Seok, Yu-Chan Kim, Eun-Young Choi, Kyeong-Ho Baik, Kyung-Hun Byun, Hoon Jeong
  • Patent number: 9214340
    Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: December 15, 2015
    Inventors: Shinichi Kurita, Srikanth V. Racherla, Suhail Anwar
  • Patent number: 9194040
    Abstract: Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented, without limitation to specific orientation, by: wherein R1 and R2 are each independently H or any C1-C3 alkyl group, R4 is trimethylsilyl or C1-C3 alkyl, and L is any ligand that does not contain oxygen; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: November 24, 2015
    Assignee: Applied Materials, Inc.
    Inventor: David Knapp
  • Patent number: 9174416
    Abstract: A mixed powder of an Ni—Al alloy and alumina is produced by heating a first mixed powder, which is prepared by mixing an Ni—Al mixed powder as prepared by mixing an Al powder with Ni in such a manner that Al therein could fall within a range of from 25 atomic % to 60 atomic %, and an alumina powder in a range of from 40% by mass to 60% by mass, in vacuum or in an inert gas atmosphere at a temperature falling within a range of from 600° C. to 1300° C. for at least 1 hour, and then grinding the resulting product.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: November 3, 2015
    Inventors: Hideyuki Murakami, Daishi Ohtsubo, Yoko Mitarai, Makoto Nanko
  • Patent number: 9133548
    Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: September 15, 2015
    Inventors: Hideaki Yamasaki, Shinya Okabe, Takeshi Yamamoto, Toru Onishi
  • Patent number: 9121093
    Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: September 1, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Clément Lansalot-Matras, Vincent M. Omarjee, Andrey V. Korolev
  • Patent number: 9093484
    Abstract: A manufacturing apparatus for a semiconductor device includes: a chamber configured to load a wafer into the chamber; a gas supplying mechanism configured to supply processed gas into the chamber; a gas discharging mechanism configured to discharge the gas from the chamber; a wafer supporting member configured to mount the wafer; a heater including a heater element configured to heat the wafer up to a predetermined temperature and a heater electrode molded integrally with the heater element; an electrode part connected to the heater electrode and configured to applied a voltage to the heater element via the heater electrode; a base configured to fix the electrode part; and a rotational drive control mechanism configured to rotate the wafer; wherein at least a part of a connection portion of the heater electrode and the electrode part is positioned under the upper surface of the base.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: July 28, 2015
    Assignee: NuFlare Technology, Inc.
    Inventors: Kunihiko Suzuki, Yoshikazu Moriyama
  • Publication number: 20150129089
    Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 14, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Daniel R. Queen, Frances Hellman
  • Patent number: 9028917
    Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: May 12, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia