Halogen Containing Coating, Reactant, Or Precursor Patents (Class 427/255.17)
  • Patent number: 11011384
    Abstract: Methods for seam-less gapfill comprising forming a flowable film by PECVD, annealing the flowable film with a reactive anneal to form an annealed film and curing the flowable film or annealed film to solidify the film. The flowable film can be formed using a higher order silane and plasma. The reactive anneal may use a silane or higher order silane. A UV cure, or other cure, can be used to solidify the flowable film or the annealed film.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: May 18, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abhijit Basu Mallick, Pramit Manna, Shishi Jiang
  • Patent number: 9394608
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: July 19, 2016
    Assignee: ASM America, Inc.
    Inventors: Eric Shero, Mohith E. Verghese, Carl L. White, Herbert Terhorst, Dan Maurice
  • Patent number: 8889566
    Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: November 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
  • Patent number: 8808793
    Abstract: A method comprising introducing a workpiece support into a chamber of an apparatus. The workpiece support is for supporting thereon a plurality of workpieces. The apparatus comprising: the chamber having an interior space configured to be maintained at a pressure below atmospheric pressure; a vapor source for supplying the interior space of the chamber with a linearly extending stream of lubricant vapor; the workpiece support for supporting thereon a plurality of workpieces with surfaces facing the vapor source; and a conveyor for continuously moving the workpiece support transversely past the linearly extending stream of lubricant vapor from the vapor source. The method also comprising continuously moving the workpiece support with the plurality of workpieces supported thereon transversely past the linearly extending stream of lubricant vapor from the vapor source and depositing a uniform thickness film of the lubricant on at least one surface of each of the plurality of workpieces.
    Type: Grant
    Filed: October 15, 2010
    Date of Patent: August 19, 2014
    Assignee: Seagate Technology LLC
    Inventor: Paul Stephen McLeod
  • Patent number: 8758856
    Abstract: A method of fluoridation that can maintain a stable treatment quality is provided. The method of the fluoridation treatment performs the fluoridation treatment by heating and keeping a workpiece in a fluoridation treatment space filled with a predetermined fluoride atmosphere. By exposing an interior space structure that is reactive against fluorine within the fluoridation treatment space, forming a fluoride layer in advance on a surface of the interior space structure exposed within the fluoridation treatment space, and performing the fluoridation treatment, a fluoridation source gas supplied for the fluoridation treatment of the workpiece is not significantly consumed for fluoridating the surface of the interior space structure during the fluoridation treatment. Further, even when a fluoridation potential of the supplied fluoridation source gas is insufficient, the fluoride layer on the surface of the interior space structure discharges the fluoridation gas.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: June 24, 2014
    Assignee: Air Water Inc.
    Inventors: Takanori Watanabe, Hideaki Iwamura, Katsuji Minami
  • Patent number: 8312609
    Abstract: The invention relates to a method of manufacturing a patterned media Ni stamper comprising depositing a perfluorodecyltrichlorosilane release layer. The release layer eliminates bonding at the master-stamper interface. A permanent master for manufacturing a patterned media stamper is also provided.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: November 20, 2012
    Assignee: Seagate Technology, LLC
    Inventors: Gennady Gauzner, Nobuo Kurataka, Dieter Klaus Weller, Christopher Joseph Formato
  • Patent number: 8236379
    Abstract: The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to electronic applications which make use of super-hydrophobic surface properties, and to biological applications which make use of super-hydrophilic surface properties.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: August 7, 2012
    Assignee: Applied Microstructures, Inc.
    Inventors: Boris Kobrin, Jeffrey D. Chin, Benigno A. Janeiro, Romuald Nowak
  • Publication number: 20090297708
    Abstract: This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane.
    Type: Application
    Filed: May 27, 2009
    Publication date: December 3, 2009
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Masayuki Tebakari
  • Patent number: 7560138
    Abstract: The invention provides oxidation resistant coatings for transition metal substrates and transition metal alloy substrates and method for producing the same. The coatings may be multilayered, multiphase coatings or gradient multiphase coatings. In some embodiments the transition metal alloys may be boron-containing molybdenum silicate-based binary and ternary alloys. The coatings are integrated into the substrates to provide durable coatings that stand up under extreme temperature conditions.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: July 14, 2009
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: John H. Perepezko, Joon S. Park, Ridwan N. Sakidja
  • Publication number: 20080289690
    Abstract: The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.
    Type: Application
    Filed: December 7, 2006
    Publication date: November 27, 2008
    Applicants: EVONIK DEGUSSA GmbH, FRAUNHOFER-GESELL. ZUR FOERD DER ANG. FORS. E.V.
    Inventors: Raymund Sonnenschein, Hartwig Rauleder, Hans Juergen Hoene, Stefan Reber, Norbert Schillinger
  • Patent number: 7449233
    Abstract: Disclosed are substrates with a first hydrophobic layer having a first contact angle and a second hydrophobic layer having a second contact angle, the first hydrophobic layer between the second hydrophobic layer and the substrate, the first contact angle being greater than the second contact angle.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: November 11, 2008
    Assignee: Innovation Chemical Technologies, Ltd
    Inventor: Pramod K. Arora
  • Patent number: 7393563
    Abstract: Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: July 1, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
  • Patent number: 7261919
    Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: August 28, 2007
    Assignee: FLX Micro, Inc.
    Inventors: Mehran Mehregany, Christian A. Zorman, Xiao-An Fu, Jeremy L. Dunning
  • Patent number: 7138186
    Abstract: Substrates have a hydrophobic surface coating comprised of the reaction products of methyltrichlorsilane (MTCS) and dimethyldichlorosilane (DMDCS). Most preferably the substrate is glass. An anchor layer is most preferably formed directly onto the glass substrate surface by means of the application of a humidified reaction product of silicon tetrachloride, followed by the vapor-deposition of MTCS as a cross-linking layer. The hydrophobic layer of MTCS and DMDCS may then be applied over the cross-linking layer of MTCS. A capping layer formed of trimethylchlorosilane (TMCS) may then be vapor deposited onto the hydrophobic layer.
    Type: Grant
    Filed: February 5, 2004
    Date of Patent: November 21, 2006
    Assignee: Guardian Industries Corp.
    Inventor: Henry A. Luten, III
  • Patent number: 7098145
    Abstract: A self-assembled monolayer (SAM) is fabricated using either a semi-fluorinated sulphur containing compound, or a sem-fluorinated silane derivative and compressed carbon dioxide (CO2) as the solvent medium. The temperature and/or pressure of the compressed CO2 may be varied during the fabrication process to improve the molecular packing density of the monolayer. By using compressed CO2 as the solvent medium, monolayers with good molecular packing density can be fabricated relatively quickly without the use of environmentally unfriendly solvents.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: August 29, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Hitoshi Fukushima, Satoru Miyashita, Masaya Ishida, Andrew Holmes, Wilhelm Huck, Christine K Luscombe
  • Patent number: 7033642
    Abstract: Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: April 25, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Irina Vasilyeva, Ammar Derraa, Philip H. Campbell, Gurtej S. Sandhu
  • Patent number: 6818250
    Abstract: Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl4+2H2O→SiO2+4HCl or Si(OR)4+2H2O→SiO2+4ROH reactions and catalyzed with ammonia (NH3) or other Lewis bases. The NH3 catalyst lowered the required temperature for SiO2 CVD from >900 K to 313-333 K and reduced the SiCl4 and H2O pressures required for efficient SiO2 CVD from several Torr to <500 mTorr.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: November 16, 2004
    Assignee: The Regents of the University of Colorado
    Inventors: Steven M. George, Jason W. Klaus
  • Patent number: 6797340
    Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: September 28, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Hongbin Fang, Hyung-Suk A. Yoon, Ken Kaung Lai, Chi Chung Young, James Horng, Ming XI, Michael X. Yang, Hua Chung
  • Patent number: 6689422
    Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: February 10, 2004
    Assignee: Howmet Research Corporation
    Inventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
  • Patent number: 6660656
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: December 9, 2003
    Assignee: Applied Materials Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
  • Patent number: 6610354
    Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: August 26, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
  • Patent number: 6586056
    Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: July 1, 2003
    Assignee: Gelest, Inc.
    Inventors: Barry C. Arkles, Alain E. Kaloyeros
  • Patent number: 6534431
    Abstract: The invention relates to a process and to an apparatus for preparing a heterogeneous catalyst having at least one catalytically active species bound to the surface of a support material. According to the process, the surface of the support is first pretreated. A catalyst reagent containing the catalytically active species or its precursor is vaporized and the vapor is routed into a reaction chamber where it is brought to interact with the support material. The catalyst reagent not bound to the support is withdrawn from the reaction chamber in gaseous form. If necessary, the species bound to the support is posttreated in order to convert it into a catalytically active form. According to the invention, the amount of catalyst reagent brought into the reaction chamber is at least equal to, preferably in excess of the number of available binding sites on the surface.
    Type: Grant
    Filed: June 24, 1997
    Date of Patent: March 18, 2003
    Assignee: Fortum Oil and Gas Oy
    Inventors: Tuomo Suntola, Eeva-Liisa Lakomaa, Hilkka Knuuttila, Pekka Knuuttila, Outi Krause, Sven Lindfors
  • Patent number: 6528430
    Abstract: An atomic layer deposition (ALD) method employing Si2Cl6 and NH3, or Si2Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate into a chamber, (b) injecting a first reactant containing Si2Cl6 into the chamber, (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate, d) removing the non-chemically absorbed portion of the first reactant from the chamber, (e) injecting a second reactant including NH3 into the chamber, (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate, and (g) removing the unreacted portion of the second reactant from the chamber. In other embodiments, the first reactant can contain two or more compounds containing Si and Cl, such as Si2Cl6 and SiCl4.
    Type: Grant
    Filed: May 1, 2001
    Date of Patent: March 4, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kim Yeong Kwan, Park Young Wook, Lee Joo Won, Kim Dong Chan
  • Patent number: 6503563
    Abstract: A rod-form high-purity polycrystalline silicon capable of preventing defects from occurring to a newly deposited silicon layer. To this end, a method of producing a rod-form high-purity polycrystalline silicon, depositing silicon on a rod-form silicon core by a thermal decomposition of a silane gas includes the steps of coating the rod-form silicon core to be used with a specific silicon layer by previously depositing any one kind of silicon layer of an amorphous silicon layer and a polycrystalline silicon layer made up of fine particles of silicon with different crystal axes from one another on a surface of the rod-form silicon core to be used by vapor growth, and depositing polycrystalline silicon by using the core coated with the specific silicon layer.
    Type: Grant
    Filed: October 9, 2001
    Date of Patent: January 7, 2003
    Assignee: Komatsu Ltd.
    Inventors: Yoshifumi Yatsurugi, Shinichiro Inoue
  • Publication number: 20020155386
    Abstract: A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.
    Type: Application
    Filed: April 20, 2001
    Publication date: October 24, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Ping Xu, Jia Lee, Ishing Lou, Li-Qun Xia
  • Patent number: 6428849
    Abstract: The invention discloses a method for producing a nitrogen-silicon containing stainless steel layer on a metal. The method includes a pack cementation process involving the use of silicon nitride, silica and sodium fluoride as the source materials.
    Type: Grant
    Filed: June 6, 2000
    Date of Patent: August 6, 2002
    Assignee: National Science Council
    Inventors: Wen-Ta Tsai, Hung-Wen Hsu
  • Patent number: 6419984
    Abstract: Several modifications have been made to the LPCVD equipment of the prior art in order to reduce the amount of particulate contamination. A bypass vent has been added in parallel with the main vacuum exhaust gate valve. Said bypass vent is left open during loading and unloading of the system with wafers that are to be processed, thereby ensuring a steady flow of air away from them at all times. Additionally, the section of the vacuum line immediately adjacent to the reaction chamber is heated. An example of the application of said modified equipment to LPCVD is provided as well as test results that illustrate the efficacy of the new equipment and method.
    Type: Grant
    Filed: August 7, 1995
    Date of Patent: July 16, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventor: Hui-Hua Chang
  • Patent number: 6413579
    Abstract: The invention is a method of making a coated glass substrate having a low haze. A soda-lime glass substrate having at least one surface upon which a coating may be deposited is provided. The glass substrate is heated and maintained at a temperature sufficient to volatilize salts that may be formed during the depositing of a first coating on the glass substrate. A first gaseous precursor mixture including a halogen containing precursor, a metal precursor, an oxidizing agent, and an inert to carrier gas is directed toward and along the surface to be coated and reacting the mixture at or near the surface of the glass substrate to form a first coating containing a metal oxide coating. The glass substrate is cooled to a temperature to reduce crystalline growth in a second coating to be applied over the first coating.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: July 2, 2002
    Assignee: Libbey-Owens-Ford Co.
    Inventors: Douglas Nelson, Steven Phillips
  • Patent number: 6340398
    Abstract: A method for enhancing the oxidation resistance of substrates fabricated from metallic molybdenum and alloys containing at least 50% molybdenum which comprises depositing silicon on the surface of the substrate under conditions which cause the formation of an outer layer of MoSi2. Also disclosed is a method for enhancing the oxidation resistance of other substrates, such as carbon-carbon and metals and alloys which show minimal reaction with molybdenum under the coating conditions, which comprises depositing a layer of molybdenum on the surface, then depositing silicon on the molybdenum layer under conditions which cause the formation of an outer layer of MoSi2.
    Type: Grant
    Filed: April 4, 2000
    Date of Patent: January 22, 2002
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Triplicane A. Parthasarathy, Madan G. Mendiratta, Dennis M. Dimiduk
  • Patent number: 6326064
    Abstract: A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.
    Type: Grant
    Filed: March 29, 1999
    Date of Patent: December 4, 2001
    Assignee: LAM Research Corporation
    Inventors: Dean R. Denison, Mark Weise
  • Patent number: 6284316
    Abstract: A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
    Type: Grant
    Filed: January 20, 2000
    Date of Patent: September 4, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Donald L. Westmoreland
  • Patent number: 6258411
    Abstract: An industrial material such as metal, ceramics or plastics whose surface has a film passivated by fluoridation and a process of manufacturing the above industrial material. The industrial material comprises a substrate, a nickel alloy film formed on the substrate and containing nickel, semimetal and/or other metal whose fluoride becomes a volatile compound, and a fluorine passivated film formed at least on a surface of the nickel alloy film in such a manner that the fluorine passivated film contains nickel and does not contain said other metal or the semimetal, and satisfies stoichiometric ratio. The process of manufacturing an industrial material comprises the steps of performing grounding treatment of a surface of a substrate, forming a nickel alloy film, on the surface of the substrate, containing nickel, semimetal and/or other metal, and forming a fluorine passivated film on the nickel alloy film.
    Type: Grant
    Filed: April 27, 1999
    Date of Patent: July 10, 2001
    Assignees: Mitsubisi Aluminum Company, Ltd., Hashimoto Chemical Corporation
    Inventors: Tadahiro Ohmi, Kazuo Chiba, Yutaka Mikasa, Kenji Ishigaki, Nobuhiro Miki, Matagoro Maeno, Hirohisa Kikuyama
  • Patent number: RE41799
    Abstract: A composition for coating glass by chemical-vapor deposition comprises a mixture of a tin oxide precursor monobutyltin trichloride, a silicon dioxide precursor tetraethylorthosilicate, and an accelerant such as triethyl phosphite; the composition is gaseous below 200° C., and permits coating glass having a temperature from 450° to 650° C. at deposition rates higher than 350 ?/sec. The layer of material deposited can be combined with other layers to produce an article with specific properties such as controlled emissivity, refractive index, abrasion resistance, or appearance.
    Type: Grant
    Filed: April 7, 1999
    Date of Patent: October 5, 2010
    Assignee: Arkema Inc.
    Inventors: David A. Russo, Ryan R. Dirkx, Glenn P. Florczak
  • Patent number: RE42887
    Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: November 1, 2011
    Assignee: Case Western Reserve University
    Inventors: Mehran Mehregany, Christian A. Zorman, Xiao-An Fu, Jeremy Dunning