Silicon Containing Coating Patents (Class 427/255.18)
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Patent number: 11820700Abstract: A method of depositing a coating utilizing a coating apparatus includes providing a coating apparatus above a glass substrate and forming a coating on a surface of the glass substrate while flowing a fluorine-containing compound into the coating apparatus. The fluorine-containing compound inhibits the formation of the coating on one or more portions of the coating apparatus.Type: GrantFiled: December 18, 2020Date of Patent: November 21, 2023Assignee: Pilkington Group LimitedInventors: Michael Martin Radtke, Steven Edward Phillips
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Patent number: 11786975Abstract: A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number ASi of silicon atoms to a sum of the number ASi of silicon atoms and number ATi of titanium atoms in a grain boundary region between the hard grains, {ASi/(ASi+ATi)}×100, is larger than an average value of percentage of number BSi of silicon atoms to a sum of the number BSi of silicon atoms and number BTi of titanium atoms in the first layer, {BSi/(BSi+BTi)}×100.Type: GrantFiled: January 25, 2022Date of Patent: October 17, 2023Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Haruko Harada, Satoshi Ono, Anongsack Paseuth, Katsumi Okamura
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Patent number: 11685849Abstract: An abrasive particle can include a coating overlying at least a portion of a core. In an embodiment, the coating can include a first portion overlying at least a portion of the core and a second portion overlying at least a portion of the core, wherein the first portion can include a ceramic material and the second portion can include a silane or a silane reaction product. In a particular embodiment, the first portion can consist essentially of silica. In another particular embodiment, the first portion can include a surface roughness of not greater than 5 nm and a crystalline content of not greater than 60%.Type: GrantFiled: October 9, 2020Date of Patent: June 27, 2023Assignees: SAINT-GOBAIN ABRASIVES, INC., SAINT-GOBAIN ABRASIFSInventors: Marc Yonger, Leslie Dos Santos, Anne M. Bonner, Mark W. Simon, Subramanian Ramalingam, Anthony Martone, Hua Fan, Darrell K. Everts, Brahmanandam V. Tanikella, Aldric Barbier
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Patent number: 11643720Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.Type: GrantFiled: March 29, 2021Date of Patent: May 9, 2023Assignee: ASM IP HOLDING B.V.Inventors: Andrea Illiberi, Giuseppe Alessio Verni, Shaoren Deng, Daniele Chiappe, Eva Tois, Marko Tuominen, Michael Givens
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Patent number: 11430653Abstract: A method of manufacturing a high electron mobility transistor in a furnace, the method including steps of: forming a first SiN film on a surface of a semiconductor stack consisting of a nitride semiconductor and including a barrier layer by a low pressure chemical vapor deposition method at a first furnace temperature of 700° C. or more and 900° C. or less; forming an interface oxide layer on the first SiN film by moisture and oxygen in the furnace at a second furnace temperature of 700° C. or more and 900° C. or less and a furnace pressure to 1 Pa or lower; and forming a second SiN film on the interface oxide layer by the low pressure chemical vapor deposition method at a third furnace temperature of 700° C. or more and 900° C. or less.Type: GrantFiled: September 29, 2020Date of Patent: August 30, 2022Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuji Yamamura, Kenya Nishiguchi, Kazuhide Sumiyoshi
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Patent number: 11424264Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a first source conductive pattern comprising a polycrystalline material including first crystal grains on a substrate, the substrate may comprising a polycrystalline material including second crystal grains, a grain size of the first crystal grains being smaller than a grain size of the second crystal grains, a stack including a plurality of gate electrodes, the plurality of gates stacked on the first source conductive pattern, and a vertical channel portion penetrating the stack and the first source conductive pattern, and the vertical channel portion being in contact with a side surface of the first source conductive pattern.Type: GrantFiled: April 2, 2020Date of Patent: August 23, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Hwan Kim, Sunggil Kim, Dongkyum Kim, Seulye Kim, Ji-Hoon Choi
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Patent number: 11414750Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.Type: GrantFiled: May 7, 2020Date of Patent: August 16, 2022Assignee: ENTEGRIS, INC.Inventors: Sungsil Cho, Seobong Chang, Jae Eon Park, Bryan C. Hendrix, Thomas H. Baum
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Patent number: 11050033Abstract: A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.Type: GrantFiled: April 23, 2019Date of Patent: June 29, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwanghee Kim, Oul Cho, Chan Su Kim, Tae Hyung Kim, Eun Joo Jang, Moon Gyu Han
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Patent number: 10253192Abstract: The present disclosure provides a barrier-coating structure that includes a polymer-matrix composite having a first surface and a second surface. The barrier-coating structure includes a flexible layer having a first surface and a second surface and a sol-gel layer having a first surface and a second surface. The first surface of the flexible layer contacts the second surface of the flexible layer. The barrier-coating structure includes a barrier layer having a first surface and a second surface. The sol-gel and/or the barrier layer may comprise one or more reactive substituents. The first surface of the barrier layer may be a laser-ablated surface.Type: GrantFiled: August 29, 2016Date of Patent: April 9, 2019Assignee: THE BOEING COMPANYInventor: Thomas K. Tsotsis
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Patent number: 10153351Abstract: In a method of manufacturing a semiconductor device, a first contact hole is formed in one or more dielectric layers disposed over a source/drain region or a gate electrode. An adhesive layer is formed in the first contact hole. A first metal layer is formed on the adhesive layer in the first contact hole. A silicide layer is formed on an upper surface of the first metal layer. The silicide layer includes a same metal element as the first metal layer.Type: GrantFiled: December 14, 2016Date of Patent: December 11, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming Hsu, Chih-Pin Tsao, Jyh-Huei Chen, Kuang-Yuan Hsu, Pei-Yu Chou
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Patent number: 9947539Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.Type: GrantFiled: July 24, 2017Date of Patent: April 17, 2018Assignee: Applied Materials, Inc.Inventors: Ludovic Godet, Srinivas D. Nemani, Tobin Kaufman-Osborn
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Patent number: 9716005Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.Type: GrantFiled: March 18, 2016Date of Patent: July 25, 2017Assignee: Applied Materials, Inc.Inventors: Ludovic Godet, Srinivas D. Nemani, Tobin Kaufman-Osborn
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Patent number: 9653536Abstract: A method for fabricating a structure comprising, in succession, a support substrate, a dielectric layer, an active layer, a separator layer of polycrystalline silicon, comprising the steps of: a) providing a donor substrate, b) forming an embrittlement area in the donor substrate, c) providing the support structure, d) forming the separator layer on the support substrate, e) forming the dielectric layer, f) assembling the donor substrate and the support substrate, g) fracturing the donor substrate along the embrittlement area, h) subjecting the structure to a strengthening annealing of at least 10 minutes, the fabrication method being noteworthy in that step d) is executed in such a way that the polycrystalline silicon of the separator layer exhibits an entirely random grain orientation, and in that the strengthening annealing is executed at a temperature strictly greater than 950° C. and less than 1200° C.Type: GrantFiled: December 2, 2013Date of Patent: May 16, 2017Assignee: SoitecInventors: Alexandre Chibko, Isabelle Bertrand, Sylvain Peru, Sothachett Van, Patrick Reynaud
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Patent number: 9437429Abstract: In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.Type: GrantFiled: September 20, 2012Date of Patent: September 6, 2016Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yasushi Kurosawa, Shigeyoshi Netsu, Naruhiro Hoshino
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Patent number: 9157150Abstract: Provided herein is a method of processing an electronic device including operating a processing chamber at a first temperature while a workpiece is being processed and removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber to a second temperature significantly lower than the first temperature. The method also includes increasing the temperature within the processing chamber to a third temperature significantly greater than the second temperature and significantly less than the first temperature while the processing chamber has no workpiece or carrier within.Type: GrantFiled: December 4, 2007Date of Patent: October 13, 2015Assignee: Cypress Semiconductor CorporationInventors: Michael B. Allen, Jesse C. Ramos, Jeffrey P. Geuea, Allan T. Nelson
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Patent number: 9011994Abstract: A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).Type: GrantFiled: April 8, 2010Date of Patent: April 21, 2015Assignee: Sumitomo Chemical Company, LimitedInventors: Akira Hasegawa, Toshiya Kuroda, Masamitsu Ishitobi, Takashi Sanada, Toshihiko Tanaka
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Patent number: 8993056Abstract: An improved process and apparatus for uniform gas distribution in chemical vapor deposition (CVD) Siemens type processes is provided. The process comprises introduction of a silicon-bearing gas tangentially to and uniformly along the length of a growing silicon rod in a CVD reactor, resulting in uniform deposition of polysilicon along the rod. The apparatus comprises an improved gas nozzle design and arrangement along the length of the rod, promoting uniform deposition of polysilicon.Type: GrantFiled: December 16, 2010Date of Patent: March 31, 2015Assignee: Savi Research, Inc.Inventors: Vithal Revankar, Sanjeev Lahoti
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Publication number: 20140370309Abstract: Hard-material-coated bodies composed of metal, cemented hard material, cermet or ceramic, coated with a TiSiCN composite layer or with a multilayer layer system which contains at least one TiSiCN composite layer. The TiSiCN composite layer is a nanocomposite layer which has been produced by a thermal CVD process without additional plasma excitation and contains a nanocrystalline phase composed of TiCxN1-x having a crystallite size in the range from 5 nm to 150 nm and a second phase composed of amorphous SiCxNy. The layer is characterized by a high hardness, a high oxidation and heat resistance and a high adhesive strength.Type: ApplicationFiled: November 28, 2012Publication date: December 18, 2014Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e. V.Inventors: Ingolf Endler, Sebastian Scholz
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Patent number: 8895457Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.Type: GrantFiled: February 18, 2011Date of Patent: November 25, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Naonori Akae, Kotaro Murakami, Yoshiro Hirose, Kenji Kameda
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Patent number: 8889566Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.Type: GrantFiled: November 5, 2012Date of Patent: November 18, 2014Assignee: Applied Materials, Inc.Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
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Publication number: 20140329011Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: ApplicationFiled: July 17, 2014Publication date: November 6, 2014Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
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Patent number: 8859052Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability include providing a component, applying an environmental barrier coating to the component, where the environmental barrier coating includes a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.Type: GrantFiled: November 30, 2012Date of Patent: October 14, 2014Assignee: General Electric CompanyInventors: Glen Harold Kirby, Brett Allen Boutwell, John Frederick Ackerman
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Patent number: 8834686Abstract: A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.Type: GrantFiled: January 11, 2010Date of Patent: September 16, 2014Assignee: 3M Innovative Properties CompanyInventors: Donald J. McClure, Mario A. Perez
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Publication number: 20140227512Abstract: The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The invention is particularly useful for applying an anti-iridescent coating to glass in an online float glass process.Type: ApplicationFiled: September 13, 2012Publication date: August 14, 2014Applicant: Arkema Inc.Inventors: Ryan C. Smith, Jeffery L. Stricker
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Publication number: 20140227866Abstract: A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member.Type: ApplicationFiled: February 13, 2013Publication date: August 14, 2014Applicant: Lam Research CorporationInventor: Travis Robert Taylor
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Publication number: 20140170318Abstract: The present disclosure relates to methods and systems for reducing silica recession of silicon-containing ceramics or silicon-containing ceramic composites, particularly those exposed to a combustion gas or to combustion gas environments, including those exposed to high temperature combustion gas environments. The methods and systems involve silicon-doping of compressed air and/or removal of moisture from compressed air prior to co-mingling the treated compressed air with the combustion gas to which the silicon-containing ceramics or silicon-containing ceramic composites are exposed.Type: ApplicationFiled: December 18, 2012Publication date: June 19, 2014Applicant: GENERAL ELECTRIC COMPANYInventor: Krishan Lal LUTHRA
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Patent number: 8734903Abstract: A chemical vapor deposition process for the deposition of a silica layer on a glass substrate is provided. The process includes providing a glass substrate. The process also includes forming a gaseous precursor mixture comprising a silane compound, oxygen, water vapor, and a radical scavenger and directing the precursor mixture toward and along the glass substrate. The mixture reacts over the glass substrate to form a silica coating thereon.Type: GrantFiled: September 5, 2012Date of Patent: May 27, 2014Assignee: Pilkington Group LimitedInventor: Douglas M. Nelson
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Patent number: 8673393Abstract: Methods are provided for vapor deposition coating of hydrophobic materials and applications thereof. The method for making a hydrophobic material includes providing a natural mineral, providing a silicone-based material, heating the silicone-based material to release vaporous molecules of the silicone-based material, and depositing the vaporous molecules of the silicone-based material to form a layer of the silicone-based material on surfaces of the natural mineral.Type: GrantFiled: June 8, 2009Date of Patent: March 18, 2014Assignee: InnovaNano, Inc.Inventors: Jikang Yuan, He Dong
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Patent number: 8658246Abstract: A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.Type: GrantFiled: September 29, 2011Date of Patent: February 25, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshihiko Takeuchi, Makoto Ishikawa, Yuki Murakami
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Patent number: 8658255Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability involving providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from rare earth elements, rare earth oxides, zirconia, hafnia partially or fully stabilized with alkaline earth or rare earth elements, zirconia partially or fully stabilized with alkaline earth or rare earth elements, magnesium oxide, cordierite, aluminum phosphate, magnesium silicate, and combinations thereof.Type: GrantFiled: December 19, 2008Date of Patent: February 25, 2014Assignee: General Electric CompanyInventors: Glen Harold Kirby, Brett Allen Boutwell, Ming Fu, Bangalore Aswatha Nagaraj, Brian Thomas Hazel
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Patent number: 8617704Abstract: A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.Type: GrantFiled: October 14, 2011Date of Patent: December 31, 2013Assignees: Research Triangle Institute, Nova Southeastern UniversityInventors: Jeffrey Robert Piascik, Jeffrey Yates Thompson, Sonia Grego, Brian R. Stoner
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Patent number: 8592005Abstract: A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer.Type: GrantFiled: April 26, 2011Date of Patent: November 26, 2013Assignee: ASM Japan K.K.Inventor: Shintaro Ueda
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Patent number: 8557687Abstract: A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.Type: GrantFiled: July 16, 2010Date of Patent: October 15, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryota Tajima, Tetsuhiro Tanaka, Ryo Tokumaru, Hidekazu Miyairi, Mitsuhiro Ichijo, Taichi Nozawa
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Patent number: 8541053Abstract: Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.Type: GrantFiled: July 7, 2011Date of Patent: September 24, 2013Assignee: Molecular Imprints, Inc.Inventors: Marlon Menezes, Frank Y. Xu, Fen Wan
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Patent number: 8512595Abstract: Surface-modified, pyrogenically prepared silica is prepared by subjecting the pyrogenically prepared silica, which is in the form of aggregates of primary particles having a BET surface area of 300±25 m2/g and the aggregates have an average area of 4800-6000 nm2, an average equivalent circle diameter (ECD) of 60-80 nm and an average circumference of 580-750 nm, to surface-modification in a known way. It can be used as a filler for controlling the rheology of liquid silicone rubber (LSR) systems.Type: GrantFiled: July 1, 2008Date of Patent: August 20, 2013Assignee: Evonik Degussa GmbHInventors: Juergen Meyer, Mario Scholz, Kai Schumacher
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Publication number: 20130209684Abstract: A method and a device for igniting silicon rods outside a CVD-reactor. A silicon rod is disposed inside a chamber of a casing of an ignition device. At least one pair of contact electrodes applies a first voltage supplied by a transformer with an open circuit voltage sufficiently high to initialize a current flow in and ignite the silicon rod. Optionally, the silicon rod may be heated by a current flow and/or an external heating unit to a temperature within a predetermined range. The silicon rod is removed from the ignition device and may be exposed to a depositing process inside a CVD-reactor. The ignition of the silicon rod outside the CVD-reactor facilitates a new ignition for the depositing process.Type: ApplicationFiled: July 25, 2011Publication date: August 15, 2013Applicant: CENTROTHERM SITEC GMBHInventor: Wilfried Vollmar
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Patent number: 8501277Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.Type: GrantFiled: May 5, 2008Date of Patent: August 6, 2013Assignee: Applied Microstructures, Inc.Inventors: Boris Kobrin, Dangaria Nikunji Hirji, Romuald Nowak, Michael T. Grimes
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Patent number: 8486487Abstract: A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=?f/?b) satisfies 1?Y?0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ?f is the density of the ceramic film and ?b is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.Type: GrantFiled: August 19, 2011Date of Patent: July 16, 2013Assignee: Konica Minolta Holdings, Inc.Inventors: Kazuhiro Fukuda, Chikao Mamiya, Hiroaki Arita
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Patent number: 8470434Abstract: The invention relates to a transparent glass substrate, associated with a transparent electro-conductive layer capable of constituting an electrode of a photovoltaic cell and composed of a doped oxide, characterized by the interposition, between the glass substrate and the transparent electroconductive layer, of a mixed layer of one or more first nitride(s) or oxynitride(s), or oxide(s) or oxycarbide(s) having good adhesive properties with glass, and one or more second nitride(s) or oxynitride(s) or oxide(s) or oxycarbide(s) capable of constituting, possibly in the doped state, a transparent electroconductive layer; a method for producing this substrate; a photovoltaic cell, a tempered and/or curved glass, a shaped heating glass, a plasma screen and a flat lamp electrode having this substrate.Type: GrantFiled: January 14, 2008Date of Patent: June 25, 2013Assignee: Saint-Gobain Glass FranceInventors: Bernard Nghiem, Emilie Viasnoff, Bertrand Kuhn, David Le Bellac, Anne Durandeau, Fabrice Abbott, Eddy Royer, Georges Zagdoun, Olivier Dubois
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Patent number: 8449941Abstract: Disclosed is a method for formation of a thermal bather coating on a gas turbine during operation thereof, which includes addition of an organic compound containing silicon to a fuel under a first condition in order to form a base layer on the surface of a part coming into contact with a combustion gas of the fuel in the gas turbine during operation thereof, as well as addition of the organic compound containing silicon to the fuel under a second condition in order to form a porous layer having more pores than the base layer above the base layer.Type: GrantFiled: November 10, 2009Date of Patent: May 28, 2013Assignees: Korea Electric Power Corporation, Korea Southern Power Co., LtdInventors: Min Tae Kim, Doo Soo Kim, Won Young Oh
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Patent number: 8440037Abstract: A coated article is provided that may be heat treated in certain example embodiments. A coating of the coated article includes a zinc oxide inclusive layer located over and contacting a contact layer that is in contact with an infrared (IR) reflecting layer of a material such as silver. It has been found that the use of such a zinc oxide inclusive layer results in improved thermal stability upon heat treatment, increased visible transmission, and/or lower sheet resistance (Rs).Type: GrantFiled: October 24, 2006Date of Patent: May 14, 2013Assignees: Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.), Guardian Industries Corp.Inventors: Anton Dietrich, Philip J. Lingle, Jens-Peter Muller, Jean-Marc Lemmer
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Publication number: 20130115374Abstract: A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system.Type: ApplicationFiled: July 19, 2011Publication date: May 9, 2013Inventors: Krishnakumar M. Jayakar, Urban Robert Kultgen, II
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Patent number: 8430972Abstract: A metal surface treatment composition including at least one compound selected from the group consisting of a zirconium compound and a titanium compound, and an organosiloxane, which is a polycondensate of organosilane and has in a molecule thereof of at least two amino groups, in which the Degree of polycondensation of the organosiloxane is at least 40%, the content of at least one compound selected from the group consisting of the zirconium compound and the titanium compound is predetermined content, the content of the organosiloxane in the metal surface treatment composition is predetermined content, and the mass ratio of at least one element selected from the group consisting of the zirconium element and the titanium element contained in the zirconium compound and the titanium compound, respectively, to the silicon element contained in the organosiloxane is a predetermined ratio.Type: GrantFiled: September 7, 2010Date of Patent: April 30, 2013Assignees: Nippon Paint Co., Ltd., Chemetall GmbHInventors: Toshio Inbe, Thomas Kolberg
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Patent number: 8430097Abstract: A medicinal inhalation device having a non-metal coating coated on at least a portion thereof, and onto which non-metal coating an at least partially fluorinated compound is then covalently bonded.Type: GrantFiled: November 6, 2008Date of Patent: April 30, 2013Assignee: 3M Innovative Properties CompanyInventors: Philip A. Jinks, Moses M. David, Rudolf J. Dams
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Patent number: 8414970Abstract: Certain example embodiments relate to a method of forming a coating on a glass substrate using combustion deposition. A glass substrate having at least one surface to be coated is provided. An organosiloxane inclusive precursor having a ring- or cage-like structure to be combusted is introduced. Using at least one flame, at least a portion of the precursor is combusted to form a combusted material, the combusted material including non-vaporized material. The glass substrate is provided in an area so that the glass substrate is heated sufficiently to allow the combusted material to form the coating, directly or indirectly, on the glass substrate. In certain example embodiments, the precursor is a cyclic siloxane based and/or polyhedral silsesquioxane (POSS) based precursor, which advantageously may affect the coating's transmission and/or reflection properties compared to conventionally used silicon precursors.Type: GrantFiled: February 15, 2008Date of Patent: April 9, 2013Assignee: Guardian Industries Corp.Inventor: Michael P. Remington
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Patent number: 8414974Abstract: Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.Type: GrantFiled: December 8, 2006Date of Patent: April 9, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Rae-Man Park, Sang-Hyeob Kim, Sunglyul Maeng, Jonghyurk Park
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Publication number: 20130071566Abstract: A chemical vapor deposition process for the deposition of a silica layer on a glass substrate is provided. The process includes providing a glass substrate. The process also includes forming a gaseous precursor mixture comprising a silane compound, oxygen, water vapor, and a radical scavenger and directing the precursor mixture toward and along the glass substrate. The mixture reacts over the glass substrate to form a silica coating thereon.Type: ApplicationFiled: September 5, 2012Publication date: March 21, 2013Applicant: Pilkington Group LimitedInventor: Douglas M. Nelson
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Publication number: 20130052349Abstract: This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.Type: ApplicationFiled: October 25, 2012Publication date: February 28, 2013Inventor: Scott Houston Meiere
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Patent number: 8377343Abstract: The invention relates to a novel optical function layer and its production, the function layer imparting to materials coated with it protection against uv radiation while transmitting electromagnetic radiation of larger wavelengths. The function layer of the invention and the manufacturing method of the invention offer advantages over the state of the art by allowing very accurate and precise adjustability in the uv range of the relatively sharp absorption constant.Type: GrantFiled: September 7, 2004Date of Patent: February 19, 2013Assignee: Justus-Liebig-Universität GiessenInventors: Bruno K. Meyer, Baker Farangis, Detlev Hofmann, Thorsten Krämer, Angelika Polity
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Patent number: 8343589Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability including providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.Type: GrantFiled: December 19, 2008Date of Patent: January 1, 2013Assignee: General Electric CompanyInventors: Glen Harold Kirby, Brett Allen Boutwell, John Frederick Ackerman