Metal Oxide Containing Coating Patents (Class 427/255.19)
  • Patent number: 11887846
    Abstract: An Atomic Layer Deposition (ALD) method to deposit a metal oxide layer onto an organic photoresist on a substrate using a highly reactive organic metal precursor. The deposition method protects the organic photoresist from loss and degradation from exposure to oxygen species during subsequent ALD cycles. The organic metal precursor may be an amino type precursor or a methoxy type precursor.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: January 30, 2024
    Assignee: Lam Research Corporation
    Inventors: Akhil Singhal, Patrick Van Cleemput
  • Patent number: 11387106
    Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 12, 2022
    Assignee: ASM IP Holding B.V.
    Inventor: Suvi Haukka
  • Patent number: 11111578
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: September 7, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Maximillian Gebhard
  • Patent number: 9139463
    Abstract: Unit for the surface treatment of flat glass, in particular in the form of a ribbon or a sheet, especially by modifying the chemical, optical or mechanical properties, or the deposition of one or more thin films, comprising heating and cooling means for creating a controlled temperature gradient through the thickness of the glass, means for heating that face to be treated, in order for it to always be at the required temperatures and for the times necessary for obtaining effective treatments of the surface thereof and means for cooling the opposite face in order for this opposite face to have a viscosity of between 1013 dPa·s and 2.3×1010 dPa·s.
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: September 22, 2015
    Assignee: FIVES STEIN
    Inventor: Wolf Stefan Kuhn
  • Patent number: 9099301
    Abstract: Methods and compositions for depositing La-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: August 4, 2015
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventor: Clément Lansalot-Matras
  • Patent number: 9055792
    Abstract: The present invention provides a diamond simulant with greater similarity to a diamond than cubic zirconia. The present invention further provides a diamond simulant with durability, hardness, and optical features closer to that of a genuine diamond that previously afforded by other diamond simulants, such as cubic zirconia.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: June 16, 2015
    Assignee: Lautrec Corporation
    Inventors: Jack Malinowski, Gary Lacourt, Frank Calcagni
  • Patent number: 9045606
    Abstract: The present invention is directed toward a method for making a polymer that has nanostructures incorporated into the matrix of the polymer. The method of the present invention involves mixing a precursor solution for the polymer with a precursor for the nanostructures to form a mixture. Nanostructures are formed in the mixture from the precursor of the nanostructures, such that the nanostructures are surrounded by the precursor solution for the polymer. The polymer is formed from the precursor solution of the polymer, which results in the nanostructures being incorporated into the matrix of the polymer.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: June 2, 2015
    Assignee: PPG Industries Ohio, Inc.
    Inventors: Songwei Lu, Thomas G. Rukavina, Mehran Arbab
  • Patent number: 9040121
    Abstract: Vacuum deposited thin films of material are described to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: May 26, 2015
    Assignee: Board of Regents The University of Texas System
    Inventors: C. Grant Willson, William Durand, Christopher John Ellison, Christopher Bates, Takehiro Seshimo, Julia Cushen, Logan Santos, Leon Dean, Erica Rausch
  • Publication number: 20150110975
    Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.
    Type: Application
    Filed: December 11, 2014
    Publication date: April 23, 2015
    Inventors: Kenji MATSUMOTO, Kaoru MAEKAWA, Tatsufumi HAMADA, Hiroyuki NAGAI
  • Publication number: 20150096850
    Abstract: A ferritically nitrocarburized rotational member of a vehicle brake is disclosed, including a rotational member having a friction surface configured for braking engagement with a corresponding friction material. A compound zone is disposed at the friction surface. An exposed surface of the compound zone is exposed to an atmosphere. The area of the exposed surface includes from about 0 percent to about 14 percent graphite.
    Type: Application
    Filed: November 12, 2014
    Publication date: April 9, 2015
    Inventors: Michael D. Hanna, Michael L. Holly, Ronnie T. Brown, James A. Webster, Lisa G. Devoe, Donna Y. Sekulovski, Kee Hyuk Im
  • Patent number: 8993057
    Abstract: Silica-dysprosium oxide core-shell nanoparticles and a method for preparing the silica-dysprosium oxide core-shell nanoparticles are disclosed. Initially, ethyl silicate, n-butanol, ethylenediamine, and distilled water are mixed in the presence of ultrasonic radiation to prepare silica nanoparticles. Then, the silica nanoparticles are isolated. Next, the isolated silica nanoparticles, an acid, n-butanol, and dysprosium oxide are mixed in the presence of ultrasonic radiation to prepare silica-dysprosium oxide core-shell nanoparticles. Finally, the silica-dysprosium oxide core-shell nanoparticles are isolated.
    Type: Grant
    Filed: October 22, 2011
    Date of Patent: March 31, 2015
    Inventors: Masoud Salavati-Niasari, Fatemeh Davar, Morteza Enhessari, Mohammad Javad Esfahani
  • Publication number: 20150072085
    Abstract: Disclosed are methods of using the Ti(iPrDAD)2 precursors to deposit Titanium oxide thin films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Inventors: Clement LANSALOT-MATRAS, Jooho LEE
  • Publication number: 20150014179
    Abstract: Disclosed are a method for forming a thermal barrier layer for a metallic component, which method involves forming a ceramic coat in which at least in part aluminum oxide and titanium oxide are disposed, the aluminum oxide and the titanium oxide being introduced by infiltration of aluminum-containing and titanium-containing particles or substances or by physical vapor deposition.
    Type: Application
    Filed: July 10, 2014
    Publication date: January 15, 2015
    Inventors: Philipp DOEBBER, Joachim BAMBERG, Stefan SCHNEIDERBANGER, Thomas BAUTSCH
  • Patent number: 8871617
    Abstract: In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: October 28, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Viljami J. Pore, Eva Tois
  • Patent number: 8859052
    Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability include providing a component, applying an environmental barrier coating to the component, where the environmental barrier coating includes a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: October 14, 2014
    Assignee: General Electric Company
    Inventors: Glen Harold Kirby, Brett Allen Boutwell, John Frederick Ackerman
  • Patent number: 8858666
    Abstract: A coating for a cutting tool, which includes a plurality of mutually superposed layers, characterized in that the coating has an outer cover layer with a first layer portion of metallic aluminium or an aluminium alloy and a second layer portion arranged thereover of aluminium oxide or a mixed oxide which contains aluminium and at least one further metal.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: October 14, 2014
    Assignee: Walter AG
    Inventor: Veit Schier
  • Patent number: 8852460
    Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: October 7, 2014
    Assignees: Air Liquide Electronics U.S. LP, American Air Liquide, Inc.
    Inventors: Olivier Letessier, Christian Dussarrat, Benjamin J. Feist, Vincent M. Omarjee
  • Publication number: 20140272291
    Abstract: A method for fabricating a hydrophilic aluminum surface includes: an activation step of preparing doped aluminum having an activated surface through doping treatment on a part or whole of an aluminum surface with applying reactive gas thereto; and a structure forming step of preparing a hydrophilic aluminum surface through oxidizing treatment on the doped aluminum to have nano-patterns comprising nano-protrusion structures on the aluminum surface. Hydrophobic aluminum can be fabricated into artificially hydrophilic or super-hydrophilic aluminum, and the hydrophilic aluminum surface body that does not have an aging effect and has long-lasting hydrophilicity can be provided.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Myoung Woon MOON, Seong Jin KIM, Heon Ju LEE, Eu Sun YU, Tae Jun KO, Kyu Hwan OH, Kwang Ryeol LEE
  • Patent number: 8834686
    Abstract: A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: September 16, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Donald J. McClure, Mario A. Perez
  • Patent number: 8795773
    Abstract: Certain example embodiments relate to coatings comprising nano-particle loaded metal oxide matrices deposited via combustion deposition. The matrix and the nano-particles comprising the coating may be of or include the same metal or a different metal. For example, the coating may include a silicon oxide matrix (e.g., SiO2, or other suitable stoichiometry) having silicon oxide (e.g., silica), titanium oxide (e.g., TiO2, titania, or other suitable stoichiometry), and/or other nano-particles embedded therein. In certain example embodiments, the coating may serve as an anti-reflective (AR) coating and, in certain example embodiments, a percent visible transmission gain of at least about 2.0%, and more preferably between about 3.0-3.5%, may be realized through the growth of a film on a first surface of the substrate. In certain example embodiments, the microstructure of the final deposited coating may resemble the microstructure of coatings produced by wet chemical (e.g., sol gel) techniques.
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: August 5, 2014
    Assignee: Guardian Industries Corp.
    Inventor: Michael P. Remington, Jr.
  • Patent number: 8795767
    Abstract: Luminescent materials and the use of such materials in anti-counterfeiting, inventory, photovoltaic, and other applications are described herein. In one embodiment, a method of forming a luminescent material includes: (1) providing a source of A and X, wherein A is selected from at least one of elements of Group 1, and X is selected from at least one of elements of Group 17; (2) providing a source of B, wherein B is selected from at least one of elements of Group 14; (3) subjecting the source of A and X and the source of B to vacuum deposition to form a set of films adjacent to a substrate; and (4) heating the set of films to a temperature in the range of 120° C. to 350° C. to form a luminescent material adjacent to the substrate, wherein the luminescent material includes A, B, and X.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: August 5, 2014
    Assignee: OMNIPV, Inc.
    Inventors: William M. Pfenninger, Nemanja Vockic, John Kenney
  • Patent number: 8747959
    Abstract: Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: June 10, 2014
    Assignee: Guardian Industries Corp.
    Inventors: Alexey Krasnov, Muhammad Imran, Willem den Boer
  • Patent number: 8741800
    Abstract: A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: June 3, 2014
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Christopher L. Marshall, Joseph A. Libera, James A. Dumesic, Yomaira J. Pagan-Torres
  • Patent number: 8728571
    Abstract: Provided is a fabrication method for a functional surface that has self-cleaning ability and superhydrophilic anti-reflective property, which includes a) arranging a plurality of beads having a sphere shape on a surface of a transparent substrate; b) forming a predetermined inter-bead gap by etching the plurality of beads; c) forming a surface unevenness on the surface of the substrate by etching the substrate using the plurality of the beads having the predetermined gap as an etching mask; d) removing the plurality of the beads from the surface of the substrate; and e) forming a photocatalytic layer or a compound layer having a surface tension of 18 to 28 N/m on the surface of the substrate formed with the surface unevenness.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: May 20, 2014
    Assignee: Korea Institute of Machinery and Materials
    Inventors: Hyuneui Lim, Seungmuk Ji, Jun-Hee Lee, Wan-Doo Kim
  • Patent number: 8716509
    Abstract: The present invention relates to a process for preparing ruthenium(0)-olefin complexes of the (arene)(diene)Ru(0) type by reacting a ruthenium starting compound of the formula Ru(+II)(X)p(Y)q (in which X=an anionic group, Y=an uncharged two-electron donor ligand, p=1 or 2, q=an integer from 1 to 6), with a cyclohexadiene derivative or a diene mixture comprising a cyclohexadiene derivative, in the presence of a base. In this process, the arene bound in the (arene)(diene)Ru(0) complex is formed from this cyclohexadiene derivative by oxidation. Suitable ruthenium(II) starting compounds are, for example, RuCl2(acetonitrile)4, RuCl2(pyridine)4 or RuCl2(DMSO)4. The bases used are inorganic or organic bases. The ruthenium(0)-olefin complexes prepared by the process according to the invention have a high purity and can be used as precursors for homogeneous catalysts, for preparation of functional ruthenium- or ruthenium oxide-containing layers and for therapeutic applications.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: May 6, 2014
    Assignee: Umicore AG & Co. KG
    Inventors: Angelino Doppiu, Andreas Rivas-Nass, Ralf Karch, Roland Winde, Eileen Woerner
  • Patent number: 8685866
    Abstract: A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 1, 2014
    Assignees: Hitachi Kokusai Electric, Inc., Renesas Electronics Corp.
    Inventors: Sadayoshi Horii, Atsushi Sano, Masahito Kitamura, Yoshitake Kato
  • Patent number: 8658255
    Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability involving providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from rare earth elements, rare earth oxides, zirconia, hafnia partially or fully stabilized with alkaline earth or rare earth elements, zirconia partially or fully stabilized with alkaline earth or rare earth elements, magnesium oxide, cordierite, aluminum phosphate, magnesium silicate, and combinations thereof.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: February 25, 2014
    Assignee: General Electric Company
    Inventors: Glen Harold Kirby, Brett Allen Boutwell, Ming Fu, Bangalore Aswatha Nagaraj, Brian Thomas Hazel
  • Patent number: 8652589
    Abstract: The method for manufacturing a hydrogen permeation barrier comprises the steps of a) depositing on a substrate (SUB) a layer system (LS) comprising at least one layer (L1,L2,L3); characterized in that step a) comprises the step of b) depositing at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide. The apparatus comprises a sealable volume and a wall forming at least a portion of a boundary limiting said volume, wherein said wall comprises a hydrogen permeation barrier comprising a layer system (LS) comprising at least one layer, wherein said layer system comprises at least one hydrogen barrier layer (HPBL) comprising an at least ternary oxide. Preferably, said at least ternary oxide is substantially composed of Al, Cr and O, and said depositing said at least one hydrogen barrier layer (HPBL) is carried out using a physical vapor deposition method, in particular a cathodic arc evaporation method.
    Type: Grant
    Filed: January 23, 2009
    Date of Patent: February 18, 2014
    Assignee: Oerlikon Trading AG, Truebbach
    Inventor: Jurgen Ramm
  • Publication number: 20140044977
    Abstract: A method for coating a substrate with a coating having a controlled morphology is disclosed, the method comprising providing a substrate, depositing a nucleating layer on a surface of the substrate using an aerosol assisted deposition method and depositing at least one further layer by chemical vapour deposition. The nucleating layer and further layer preferably comprise tin oxide. The substrate is preferably glass. The method results in high transmittance and a low diffuse transmission across the visible and infrared region.
    Type: Application
    Filed: April 17, 2012
    Publication date: February 13, 2014
    Applicants: UNIVERSITY COLLEGE LONDON, PILKINGTON GROUP LIMITED
    Inventors: Troy Manning, Ivan Paul Parkin, Mathew Robert Waugh
  • Patent number: 8633119
    Abstract: Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: January 21, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, Maitreyee Mahajani
  • Patent number: 8633114
    Abstract: Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: January 21, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tatsuya E. Sato, Maitreyee Mahajani
  • Patent number: 8592005
    Abstract: A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: November 26, 2013
    Assignee: ASM Japan K.K.
    Inventor: Shintaro Ueda
  • Patent number: 8580989
    Abstract: The present invention relates to a process for the preparation of indium(III) halodialkoxides of the generic formula InX(OR)2 where X=F, Cl, Br, I and R=alkyl radical, alkoxyalkyl radical, in which a composition (A) comprising an indium trihalide InX3, where X=F, Cl, Br and/or I, and at least one alcohol of the generic formula ROH, where R=alkyl radical, alkyloxyalkyl radical, is reacted with a composition (B) comprising at least one secondary amine of the generic formula R?2NH, where R?=alkyl radical, to the indium(III) halodialkoxides which can be prepared by the process and to their use.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: November 12, 2013
    Assignee: Evonik Degussa GmbH
    Inventors: Juergen Steiger, Alexey Merkulov, Dennis Fruehling, Arne Hoppe, Nicole Brausch
  • Patent number: 8557328
    Abstract: A coating apparatus includes non-orthogonal coater geometry to improve coatings on a glass ribbon, and to improve yields of such coatings. The apparatus includes a first arrangement to move the ribbon along a first imaginary straight line through a coating zone provided in a glass forming chamber. The coater has a coating nozzle and an exhaust slot, each have a longitudinal axis. The coating nozzle directs coating vapors toward the coating zone, and the exhaust slot removes vapors from the coating zone. A second arrangement mounts the coater in spaced relation to the path with the coating nozzle and the exhaust slot facing the coating zone. A second imaginary straight line is normal to the longitudinal axis of the coating nozzle, and the first imaginary line and the second imaginary line subtend an angle in the range of greater than zero degrees to 90 degrees.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: October 15, 2013
    Assignee: PPG Industries Ohio, Inc.
    Inventors: James W. McCamy, John F. Sopko
  • Patent number: 8501277
    Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.
    Type: Grant
    Filed: May 5, 2008
    Date of Patent: August 6, 2013
    Assignee: Applied Microstructures, Inc.
    Inventors: Boris Kobrin, Dangaria Nikunji Hirji, Romuald Nowak, Michael T. Grimes
  • Patent number: 8361545
    Abstract: A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: January 29, 2013
    Assignees: IUCF-HYU Industry-University Cooperation Foundation, Hanyang University, Iowa State University Research Foundation, Inc.
    Inventors: In Sung Park, Tae Ho Lee, Jin Ho Ahn, Rana Biswas, Kristen P. Constant, Kai-Ming Ho, Jae-Hwang Lee
  • Patent number: 8357614
    Abstract: Disclosed are ruthenium-containing precursors and methods of using the same in CVD and ALD.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: January 22, 2013
    Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventor: Satoko Gatineau
  • Patent number: 8343589
    Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability including providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from the group consisting of zinc aluminate spinel, alkaline earth zirconates, alkaline earth hafnates, rare earth gallates, beryl, and combinations thereof.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: January 1, 2013
    Assignee: General Electric Company
    Inventors: Glen Harold Kirby, Brett Allen Boutwell, John Frederick Ackerman
  • Patent number: 8336487
    Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: December 25, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Yoshihiro Ishida, Katsushige Harada, Takuya Sugawara
  • Patent number: 8327664
    Abstract: A method for producing transparent conductive glass by a) depositing two barrier layers on the surface of hot glass by chemical vapor deposition; and b) depositing two conductive film layers on the surface of the glass ribbon having the two barrier layers. The method is easy to control and suitable for mass production. The resultant transparent conductive glass has low surface resistance and moderate haze.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: December 11, 2012
    Assignee: Hangzhou Bluestar New Materials Technology Co., Ltd.
    Inventors: Qiying Liu, Jianxun Wang, Ming Zhao, Nianwei Zhao, Yayan Cao, Junbo Liu, Fanhua Kong, Defa Wei, Yankai Ge, Chunjia Peng, Yongxiu Cai, Zhihui Ye, Molong Xiao
  • Patent number: 8318329
    Abstract: The radiation-selective absorber coating (20) has two barrier layers (24a, 24b), an IR-reflecting layer (21) arranged thereon, an absorption layer (22) arranged above the IR-reflecting (21) and an antireflection layer (23) over the absorption layer (22). The absorber tube (13) is a steel tube (1) with the radiation-selective absorber coating (20) applied to the outside thereof. In the process of coating the absorber tube (13) a first oxide barrier layer (24a) is applied to a steel tube by thermal oxidation; a second barrier layer (24b) is then applied by physical gas phase deposition of silicon with supply of oxygen; the IR-reflecting layer (21) is then applied by gas phase deposition of gold, silver, platinum or copper; the absorption layer (22) is then applied by deposition of aluminum and molybdenum; and a final antireflection layer (23) is applied by deposition of silicon with supply of oxygen.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: November 27, 2012
    Assignee: Schott AG
    Inventors: Kamel Silmy, Jan Schulte-Fischedick, Thomas Kuckelkorn, Christina Hildebrandt, Wolfgang Graf, Andreas Georg
  • Patent number: 8309236
    Abstract: Provided is a protective alumina film mainly containing alumina in the ?-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: November 13, 2012
    Assignee: Kobe Steel, Ltd.
    Inventors: Hiroshi Tamagaki, Toshimitsu Kohara
  • Patent number: 8287956
    Abstract: A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: October 16, 2012
    Assignee: Robert Bosch GmbH
    Inventors: Aaron Partridge, Markus Lutz, Silvia Kronmueller
  • Publication number: 20120244342
    Abstract: In one aspect, the present invention provides coated cutting tools comprising a PcBN substrate wherein a layer of single phase ?-alumina is deposited by chemical vapor deposition directly on one or more surfaces of the substrate.
    Type: Application
    Filed: March 25, 2011
    Publication date: September 27, 2012
    Applicant: Kennametal Inc.
    Inventors: Zhigang Ban, Yixiong Liu
  • Patent number: 8236433
    Abstract: An antireflection structure is provided. The antireflection structure includes a substrate layer having a substrate refractive index; a first inorganic layer disposed on the substrate layer and having a first refractive index different from the substrate refractive index, where a thickness of the first inorganic layer is in a range of 1 to 40 nm; and a second inorganic layer disposed on the first inorganic layer and having a second refractive index different from the first refractive index.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: August 7, 2012
    Assignee: National Applied Research Laboratories
    Inventors: Po-Kai Chiu, Wen-Hao Cho, Hung-Ping Chen, Han-Chang Pan, Chien-Nan Hsiao
  • Patent number: 8197591
    Abstract: The invention relates to a pearlescent pigment comprising a metal oxide-containing, platelet-shaped substrate and having a first and a second protective layer, wherein the metal oxide has a refractive index greater than 1.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: June 12, 2012
    Assignee: Eckart GmbH
    Inventors: Günter Kaupp, Ulrich Schmidt
  • Patent number: 8192595
    Abstract: A transition metal/carbon nanotube composite includes a carbon nanotube and a transition metal oxide coating layer disposed on the carbon nanotube. The transition metal oxide coating layer includes a nickel-cobalt oxide.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: June 5, 2012
    Assignees: Samsung Electronics Co., Ltd., Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Ho-jung Yang, Hyo-rang Kang, Kwang-bum Kim, Jin-go Kim
  • Patent number: 8187698
    Abstract: The present invention relates to a cutting tool insert comprising a cemented carbide body and a coating particularly useful in fine to medium-rough turning of stainless-steels. The cemented carbide body consists of a cemented carbide with a composition of 5.0-9.0 wt-% Co, 5.0-11.0 wt-% cubic carbide forming metals from group IVb, Vb and VIb of the periodic table, preferably Ti, Nb and Ta, and balance WC with a 10-30 ?m essentially cubic carbide phase free and binder phase enriched surface zone. The coating comprises an MTCVD Ti(C7N) as the first layer adjacent the body having a thickness of from 2.5 to 7.0 ?m, on top of which an ?-Al2O3 layer is present, with a thickness of between 2.0 and 5.0 ?m, and a total thickness of the coating between 5.5 and 9.5 ?m. The alumina layer has a (006) texture.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: May 29, 2012
    Assignee: Seco Tools AB
    Inventors: Erik Sundstrom, Stefan Ostlund, Jenni Zackrisson
  • Patent number: 8163403
    Abstract: This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: April 24, 2012
    Inventor: Mark A. Zurbuchen
  • Publication number: 20120088845
    Abstract: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
    Type: Application
    Filed: April 25, 2011
    Publication date: April 12, 2012
    Inventors: Zehra Serpil Gonen Williams, Yijun Wang, Robert J. Wiacek, Xia Bai, Linfeng Gou, Selina I. Thomas, Wei Xu, Jun Xu, Rakesh Patel