Abstract: A processing line includes a processing tool and an automatic process controller. The processing tool is adapted to deposit a layer of material on a semiconductor wafer based on an operating recipe. The automatic process controller is adapted to identify a post-idle set of wafers to be processed in the processing tool after an idle period, determine deposition times for wafers in the set of post-idle wafers, and modify the operating recipe of the processing tool for each of the wafers in the post-idle set based on the deposition times. A method for reducing wafer to wafer deposition variation includes designating a set of post-idle wafers; determining a deposition time for each of the wafers in the post-idle set, at least two of the deposition times being different; and depositing a layer on the wafers in the post-idle set based on the deposition times determined.

Abstract: A metallic substrate has a substrate surface having a substrate surface of nickel, a substrate aluminum content, and other alloying elements. A maskant is applied overlying the substrate surface to produce a masked substrate surface having an exposed region and a protected region. The maskant includes a plurality of maskant particles, each particle having a maskant particle composition comprising a maskant metal selected from the group of nickel, cobalt, titanium, chromium, iron, and combinations thereof, and a maskant aluminum content. The substrate is aluminided by contacting a source of aluminum to the masked substrate surface, whereby aluminum deposits on the exposed region and does not deposit on the protected region.

Abstract: Layered ceramic coatings in which some layers contain porosity as described as are methods for producing such coatings. The different layers have different compositions and/or are applied under different conditions. As applied, some of the layers have a Zone I structure and some have a Zone II/III type structure (as defined by Movchan). Heat treatment can be used to increase the porosity in the Zone I structure layers.

Abstract: A crystal substrate and a crystal film of a III-V compound of the nitride system which are manufactured easily and have few dislocations. A method of manufacturing a crystal for the manufacture thereof, and a method of manufacturing a device with the use thereof. On a basal body, formed in order are a base crystal layer of, for example, gallium nitride (GaN), a first mask pattern of, for example, silicon dioxide (SiO2), an intermediate crystal layer of, for example, gallium nitride, a second mask pattern of, for example, silicon dioxide, and a top crystal layer of, for example, gallium nitride. The first and second mask patterns have stripes arranged at least in one direction at unequally spaced intervals. The stripes are different in pitch from pattern to pattern. Thus, the mask patterns at least partly overlie one another in the direction of the thickness of the crystal layers.

Abstract: Method for producing a high temperature resistant exchanger. The exchanger is made from a number of tubes sealingly connected to a pipe plate which is further connected to an enclosure. The pipe plate is realised by positioning enclosure and tubes in a mould and pouring a ceramic slurry which is subsequently sintered.