Abstract: Acrylic-type normally tacky and pressure-sensitive adhesives are firmly bonded to polyolefin substrates that have been primed by coating with a monomer composition and subjecting the coated substrate to actinic radiation to effect graft-polymerization.

Abstract: A method for rendering an aluminum electrowinning cell component fabricated from an aluminum nonwettable material wettable by molten aluminum, and therefore utilizable within the cell. Under the method, the component is coated with titanium and boron, and while the component is immersed in molten aluminum within the cell, the molten aluminum is maintained near saturation with boron and titanium.

Abstract: A method of treating filaments in order to increase their wettability by molten magnesium or an alloy thereof. The filaments are treated by coating them with particulate molybdenum trioxide, chromic oxide, ferric oxide or nickel oxide and subsequently infiltrating them with molten magnesium or an alloy thereof.

Abstract: For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, a beam of charged particles is impacted and focused on the polysilicon layer, the substrate and beam are relatively displaced so that the beam of charged particles scans at least a portion of the polysilicon layer in the direction in which the seeding locations are spaced apart, the speed with which the beam relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the area of impact thereon for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations, and charge buildup on the layer of silicon dioxide is avoided to prevent interference with focusing of the beam.

Abstract: Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.

Abstract: The present invention teaches a two-and-one-half-level resist process, wherein a first planarizing resist layer is applied, an anti-reflective coating (which need not be a photoresist itself) is applied, and then a top photoresist layer is applied. The top layer is patterned conventionally, at a wavelength which the anti-reflective coating absorbs, and a flood exposure (preferably in deep ultraviolet light) is then used to transfer this pattern to the bottom planarizing resist layer. Good patterning of non-planar surfaces despite topography is thus achieved, and pattern degradation due to spurious reflections (e.g., from an aluminum layer being patterned) is avoided.

Abstract: Image display including a viewing screen comprising spaced elemental image areas and a light-absorbing matrix of crystalline zinc-iron sulfide particles adjacent to these areas. The display may be made by producing a layer which is tacky in substantially the pattern of the desired matrix, and then contacting crystalline zinc-iron sulfide particles with the tacky pattern, whereby particles adhere to the tacky pattern, thereby producing the desired matrix.

Abstract: A multilayered composite product including a base, a patterned cured resin bonded to the base and an applied metal layer selectively bonded to the patterned cured resin. The product is useful as an electrical circuit.

Abstract: The specification describes a process for treating patterned VLSI lithographic masks to retain their shape during processing of VLSI wafers. The process avoids the common postbake treatment which tends to cause sagging of the sidewalls of the mask. Retention of vertical sidewalls on the mask edges has been found important for producing vertical sidewalls in layers that are being anisotropically etched.

Abstract: The invention relates to a process for the production of patterned lustre coatings on surfaces of bodies of glazed ceramic, in particular, tiles, glass or enamel using a cover corresponding to the pattern to be produced. On the surface of the body acting as substrate, a negative of the pattern is produced by a paste applied by screen printing, the body provided with the pattern negative is heated in a furnace to a temperature above approximately 400.degree. C., the body is subsequently dipped into the solution of a metallic compound which reacts with the surface of the body not covered by screen printing to form a thin layer of the metal and oxides of the metal. In the metal/metal oxide layer of the body whose surface is cooled down by dipping, lustre colors are produced by heat input. Finally, after formation of the lustre colors, the screen printing paste constituting the pattern negative is removed from the body.

Abstract: This method involves the deposition of free metal atoms (4) from the apex (5) of a pointed tip (1) supported at a distance of 10 to 20 nm from a substrate (2). The atoms (4) are being field-desorbed under the influence of a strong electric field existing between the tip (1) and the substrate (2). With the tip (1) being moved across the substrate (2), a narrow trace (6) of metal atoms will be deposited on the substrate.

Abstract: A cathode having high durability and low hydrogen overvoltage comprising an electrode substrate and an alloy layer formed thereon, characterized in that said alloy layer is made of an alloy comprising Component X selected from the group consisting of nickel, cobalt and a mixture thereof, Component Y selected from the group consisting of aluminum, zinc, magnesium and silicon, and Component Z selected from the group consisting of a noble metal and rhenium, and having a composition of Components X, Y and Z falling within the range defined by the following points A, B, C and D with reference to the diagram of FIG. 1:A: X=99.6 wt. %, Y=0 wt. %, Z=0.4 wt. %B: X=79.6 wt. %, Y=20 wt. %, Z=0.4 wt. %C: X=10 wt. %, Y=20 wt. %, Z=70 wt. %D: X=12.5 wt. %, Y=0 wt. %, Z=87.5 wt. %.

Abstract: In order to hard-bake the bottom resist layer of a tri-level resist system for patterning a device wafer, the resist is subjected to a positive ramp heating step (of increasing ambient temperatures).

Abstract: Steel product in coil form such as sheet steel is uncoiled, then preheated, continuously transported through a lead bath containing chromium, then cooled, and finally recoiled. When the coiled steel does not have titanium, titanium is included in the bath in order to improve the corrosion resistance of the final product.

Abstract: A method for manufacturing VLSI complementary MOS field effect transistor circuits (CMOS circuits). By use of a suitable gate material, preferably a gate material comprised of silicides of high melting point metals, a threshold voltage of n-channel and p-channel CMOS-FETs having gate oxide thicknesses d.sub.GOX in a range of 10 to 30 nm is simultaneously symmetrically set by means of a single channel ion implantation. Given employment of tantalum silicide, the gate oxide thickness d.sub.GOX is set to 20 nm and the channel implantation is executed with a boron dosage of 3.times.10.sup.11 cm.sup.-2 and an energy of 25 keV. In addition to achieving a high low-level break down voltage for short channel lengths, this enables the elimination of a photolithographic mask. This represents an improvement with respect to yield and costs. The method serves for the manufacture of analog and digital CMOS circuits in VLSI technology.

Abstract: An alloyed copper wire rod is formed by continuous rod-casting, wherein a core rod is driven through a crucible containing molten metal. High purity copper melt is continuously charged into the crucible; to which an alloying material is simultaneously added in a quantity which corresponds to the given casting speed of the core rod. The required alloy thus obtained is crystallized on the surface of the core-rod as it passes through the crucible and the rod produced is treated in the usual manner i.e., cooling, rolling and coiling.

Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resist baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as that formed by the condensation of formaldehyde with a silicon-substituted phenol. This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.

Abstract: Photoresist compositions are provided whereby metals are incorporated into the resist by providing a photoresist composition comprising the reaction product of an organic resist which has at least one reactive hydroxyl or amino group with an organometallic compound. Also provided is a process for generating a pattern on a substrate by coating the substrate with a thin film of the photoresist composition which comprises the reaction product of the organic resist which has at least one reactive hydroxyl or amino group with an organometallic compound. The photoresist compositions are particularly suitable for use in diazo-type electron beam procedures.

Abstract: An improved photolithography process is disclosed wherein photoresist masks are treated to reduce the sticking of photoresist to the mask. In many photolithography processes, a photoresist layer is exposed through a photoresist mask having an opaque patterned layer on a surface of the mask. To prevent adhesion of the photoresist to the mask surface when the mask and photoresist are brought into contact, the mask surface is first treated in a fluorine plasma.

Abstract: A method of and apparatus for chemically depositing a metal to a substrate in the presence of a rapidly flowing chemical-depositing solution furnishing the metal. A narrow light beam is directed onto the substrate and intercepted by a localized area thereon to activate an interface between the area and the flowing solution. The metal in the solution is thereby chemically deposited on the localized area. The beam and the substrate are relatively displaced to successively shift the area of interception of the beam until a desired surface region on the substrate is rapidly deposited. Preferably, the thickness of the solution passing rapidly and traversed by the beam incident on the localized area is limited not to exceed a preselected dimension.

Abstract: A method for applying a wear-resistant coating to a working surface of an object, which working surface is to be exposed to wear. To coat the object, it is dipped in a bath of molten metal containing unmolten hard metal carbide particles dispersed therein, whereby a coating is formed on the object.

Abstract: A method for etching a polyimide body which involves directing U.V. radiation having a wavelength between about 240 to 400 nm. onto the body is described. The radiation is continued to be applied to the body for sufficient time to cause a direct etching of the body where the radiation impinges upon the body. The method is particularly useful where the U.V. radiation is passed through a mask located between the source of the ultraviolet radiation and the body so that a radiation pattern is projected onto the body where the direct etching takes place. The etching can be caused to produce openings having a positive slope in the radiation pattern upon the polyimide layer. The advantage of the positive slope is particularly great where a coating such as a metal layer is deposited over the remaining polyimide layer having the openings therein. The positive slope allows the complete filling of the openings.

Abstract: A dry process for forming a positive tone micro pattern by coating a substrate with an organic polymer film then with a film of an oxygen etch barrier, selected from the group consisting of films of organometallic, including organosilicon compounds and metals, exposing the etch barrier film to a low energy proton beam in a patternwise manner, and developing the pattern by means of oxygen reactive ion etching.

Abstract: A multilayer identification card bearing information such as letters, numbers, patterns, pictures and so on, in which at least part of the information is present in the form of a structure in relief in a foamable synthetic material. The foamable synthetic material is transparent or dyed in the visible spectral range and is present in the identification card in the form of a layer covering either its entire surface or part of it. The information in relief is produced by means of a laser beam recorder, the energy dosage of which is used to induce the locally controllable foaming process in the synthetic material compounded with chemical or physical blowing agents. The protection against forgery may be further increased by additionally photocuring the foamable synthetic layer.

Abstract: Catalytic etching is carried out by placing a pattern of a catalyst on a surface to be selectively etched and treating the imaged surface with an activated fluid which consumes the material being etched. In one embodiment a surface such as a chalcogenide is provided with a silver or other metal pattern corresponding to a semiconductor pattern and the chalcogenide is etched with an oxygen containing plasma reactive with the chalcogenide, the reaction being increased by the silver to provide a positive resist.

Abstract: Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

Abstract: A method of manufacturing a tuner chassis, in which a tuner chassis assembly is entirely dipped in a molten solder bath to effect the plating of the chassis surface with a solder layer, and thereafter the chassis assembly is dipped in an oil bath heated to a temperature higher than the melting temperature of the solder and then raised, whereby the state of solder plating on the chassis surface is improved by making use of the mechanism that oil forms an oil film on the chassis.

Abstract: A method is provided for coating magnesium granules with a fluoride-containing salt comprising contacting the granules with at least one fluoride-containing salt selected from the group consisting of alkali and alkaline earth metal fluorides and fluoborates and thereby produce a fluoride-containing coating on the surface of the granules. The coating is characterized in that the oxidation of the magnesium granules is greatly inhibited during the use of the granules as an addition agent to a molten metal bath, for example, when used in the desulfurization of steel.

Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.

Abstract: A method of manufacturing and using a magneto-optic device is provided in which a non-magnetic substrate material is utilized to support a laminate formed of at least two layers of magnetic material having certain magnetic and optical properties optimized in one layer and certain switching properties optimized in another layer. The laminate layers are exchange-coupled at their interface to permit the propagation of a magnetic domain wall through the interface from the switching optimized layer to the optically optimized layer so that the direction of magnetization and Faraday rotation of the entire multi-layer magnetic material laminate can be reversed through application of an applied external magnetic field having a relatively small threshold value. A modified region of decreased anisotropy material is provided within the switching optimized layer to reduce the switching threshold field for the magneto-optic device to a fraction of the low threshold of the magnetic material of the switching optimized layer.

Abstract: A method for performing high resolution lithography. The first step involves disposing on a substructure having a surface layer to be patterned a layer of a resist material characterized by both substantial degradation sensitivity for incident ionizing radiation of a predetermined type and substantial instability of undegraded regions for a predetermined plasma etchant which attacks the surface layer. The next step is to expose a prearranged pattern of regions of the resist layer to the predetermined type of radiation to produce a corresponding pattern of degraded resist regions. Then the pattern of degraded resist regions is removed using a preselected developing solution. The next step is to modify the resist material to increase the stability thereof for the plasma etchant by exposing the developed resist layer to ionizing radiation of a type which has been predetermined to degrade the resist material and then baking the degraded resist layer.

Abstract: In the patterning process in the fabrication of VLSI, LSI and IC systems, the electron beam is used to write a pattern over a resist layer on a wafer, but the resist layer is exposed by X-rays. More particularly, a finely focused beam of electrons writes a pattern on a thin metal film formed over a resin layer which in turn is formed over a wafer and the secondary X-rays; that is, the characteristics X-rays (such as K.alpha.) emitted from the thin metal film when the electron beam strikes it, expose the resist layer which is sensitive to the X-rays, whereby a high degree of resolution can be obtained.

Abstract: A patterned polymer film is deposited on a substrate by pattern-wise exposing a monomer vapor to a beam of ions and dry developing by etching with oxygen plasma.

Abstract: A maskless process is disclosed for applying a patterned solder mask coating to a circuit board (31). In accordance with the process, there is applied to the surface (30) of the circuit board an uncured material (32) having a cure reaction which is susceptible to inhibition by the presence of oxygen. The surface of the circuit board is covered with the material to a first predetermined thickness. This first predetermined thickness of material on land areas (34) surrounding holes (36) in the circuit board is diminished to a second predetermined thickness by allowing a portion of the material on the land areas to flow into the holes. The uncured material is exposed to a first energy source which delivers a quantity of energy such that a surface layer (38) having the second predetermined thickness has its cure reaction substantially inhibited due to the presence of oxygen.

Abstract: Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in the electronic stopping region cause intermixing in a thin surface layer resulting in improved adhesion without excessive doping. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters.

Abstract: A wiring circuit board with a fine wiring pattern free from disconnection and poor insulation is produced by forming an insulating layer consisting of at least two insulating substances having different dissociation energies for metalization, including metal elements, on a substrate and irradiating the insulating layer with an energizing beam by scanning, thereby forming a wiring pattern as desired.

Abstract: A process for forming a desired metal pattern on a substrate which comprises, forming a mask of a thermally depolymerizable polymer on the substrate with a pattern of openings complementary to the desired metal pattern, blanket coating the substrate and the mask with a metal, heating the substrate to depolymerize the depolymerizable polymer, cooling the surface of the metal to thereby delaminate the metal coated in areas where thermally depolymerizable polymer is present, removing the delaminated metal where necessary, and optionally plasma ashing the depolymerized polymer, if residue thereof remains, to remove the same from said substrate.

Abstract: A polymeric halocarbon is used as an etch barrier for plasma etching in a process to make high resolution, high aspect ratio polymer patterns.

Abstract: An areal array of tubular electron sources is disclosed for producing multiple directed electron beams. Sources (10) are located in a parallel array between a conductive back plate (12) at a closed end of the tubes and a conductive face plate (14) having holes therein aligned with the second open end of each of the electrode tubes (10). An electrical current source (30) is connected between the back plate (12) and face plate (14) to resistively heat each of the sources (10) to a temperature high enough for thermionic electron emission. Electron beams (34) are produced from within each of the tubular electrodes (10). Extraction means which may include a magnetic field from a coil (29) and an extraction lens (18) tends to withdraw the electrons from within the sources (10) in an intense, collimated beam (34). Beams (34) are accelerated toward a target (28) through a beam deflection unit (22) having holes (24) associated with each of the electron beams (34 ).

Abstract: A plating method comprises the steps of melting the metal and forming a bath of the molten metal, and displacing a strand to be plated longitudinally through the molten-metal bath so the strand leaves the bath at a surface thereof. Thus the molten metal of the bath sticks to the strand and forms a molten metallic layer thereon. A helicoidal, that is at least generally helical or corkscrew-shaped, magnetic field generally centered on the strand is formed and positioned to exert on the metallic layer a magnetic force generally parallel to the strand and on the conductive metallic bath a rotary force centered on the strand. The field is polarized to exert the magnetic force upward to thicken the layer on the strand and is polarized oppositely to exert the magnetic force downward to thin the layer on the strand. The rotary action on the bath serves to move any impurities floating on the bath outward away from the rising strand.

Abstract: A process for manufacturing a boride dispersion copper alloy by preparing a metallic material having a surface portion comprising at least one of beryllium, gallium, manganese, nickel, palladium, silicon and vanadium, and copper or an alloy thereof, and diffusing boron into the surface portion. The resulting material includes fine boride particles uniformly dispersed in the surface portion and is useful as a material for electrical contacts or sliding parts due to its high resistance to adhesion, wear and arc, and excellent electrical conductivity and sliding properties.

Abstract: A process for manufacturing a boride dispersed copper alloy by preparing a metallic material having a surface portion comprising at least one of Al, As, Cd, Co, Cr, Fe, Mg, Mo, Nb, Pt, Ta, W and Zr, and copper or an alloy thereof, and diffusing boron into the surface portion. The resulting material includes fine boride particles uniformly dispersed in the surface portion and is useful as a material for electrical contacts or sliding parts due to its high wear, adhesion and arc resistance and high electrical conductivity.

Abstract: A method for forming a protecting film on the side walls of a semiconductor device, e.g. a semiconductor laser, having an exposed PN junction at the side walls thereof is carried out by the following steps. The semiconductor device is placed on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.

Abstract: A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.

Abstract: The invention provides a novel color filter used for an image pickup device for a color TV receiver and a method for manufacturing the color filter. More particularly, transparent layers to adhere color pattern layers to each other are not formed below second and third color pattern layers. Meanwhile, the surfaces of the precolored resin layers are exposed to a plasma atmosphere so that surfaces of color pattern layers are polymerized to form intermediate polymerized layers to separate the precolored resin layers. Therefore, blurs are eliminated from the second and third color pattern layers. Further, adhesion of the precolored resin layers is great.

Abstract: A method is disclosed for substantially reducing shrink back of thermosetting materials from electrical cable. The method comprises reheating the cable, after curing of the thermosetting material and cooling of the cable, to a temperature below the melting point of the thermosetting material.

Abstract: Paste-consistency photopolymer is imaged onto printed wiring boards by coating the board overall and positioning the photographic film over the board in register and off-contact. A resilient blade is pressed against the phototool at one end of the board and drawn across the surface, thus facing the photographic film into intimate contact with the photopolymer and purging all air therebetween. Mounted on the resilient blade aft of leading edge is a shuttered tubular lamp which hardens the photopolymer where the photographic film is clear, so that in a single pass the photographic film is sequentially mated and photopolymer exposed, to produce line widths unmatched by competing dry film systems and at speeds of 0.5 feet per second.

Abstract: The method of making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methacrylonitrile (MCN) is disclosed utilizing a prebaking step in which the copolymer resist in film form on the substrate is prebaked at a temperature below the decomposition temperature to improve the sensitivity of the resist. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity, and high plasma etch resistance which makes them desirable for dry etching techniques in addition to other masking techniques which enable submicron resolution.

Abstract: A process for making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methyl .alpha.-chloroacrylate (MCA) is disclosed in which a thin film of high molecular weight MAA/MCA copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.

Abstract: A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition. This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm.sup.2 /pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments. No subsequent development step is required for patterning the resist layer.