Abstract: Describes a process for controlling the polymerization and cross-linked density of electrophoretic gel products useful for separation of bioorganic molecules, which process does not use initiators common to processes of the art. Electron beam polymerized gels afford the desired advantages of being ultra thin and having a high electrophoretic resolution with programmable porosity profiles.

Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.

Abstract: Accurately altering a precisely located site on a substrate by: (a) providing a vacuum chamber; (b) providing an energy beam; (c) providing a source of a hydrocarbon and a conduit extending between the source and the chamber, the hydrocarbon being capable of being adsorbed in the substrate and of interacting with the energy beam to alter the substrate; (d) positioning the substrate in the chamber to be exposed to hydrocarbon delivered by the conduit; (e) introducing into the conduit a carrier having a vapor pressure above the vapor pressure of the hydrocarbon, the carrier being in vapor form under conditions existing in the conduit and having a bulk velocity that transports the hydrocarbon by molecular collisions into the chamber, the hydrocarbon being adsorbed on the surface of the substrate, free carrier molecules being drawn off sufficiently rapidly to maintain low pressure in the chamber; and (e) while maintaining the low chamber pressure, directing the energy beam to the site in the presence of the absor

Abstract: The method consists in clamping the edges of the tape between two jaws of a clamp and in displacing the clamp vertically upwardly. The apparatus includes two vertical columns (10, 11) along which two carriages (12, 13) are capable of moving, with each carriage having a corresponding clamp (14, 15) and means (16, 17, 19, 20) for controlling clamp operation and vertical displacement of the carriages along the columns. Such semiconductor-coated material is suitable for making solar photocells, for example.

Abstract: A process for enhancing the wettability of evaporation elements, such as substrates and metal reservoirs used in liquid metal ion sources, and the elements so produced wherein a coating material is wettably coated onto the evaporation element at a coating temperature greater than the ion source operating temperature. The coated element is cooled to the operating temperature, and then contacted with the molten ion source alloy. The coating material is selected to wet the substrate or reservoir at the coating temperature, but to be itself wet by the ion source alloy at the ion source operating temperature. The preferred coating metal is gold, which is first applied by electrodeposition onto the evaporation element, and the evaporation element and coating are heated to a coating temperature of about 800.degree. C. to complete the coating step. The coated evaporation element is cooled to the source operating temperature of 200.degree. C.-300.degree. C.

Abstract: Aluminum coated ferritic base metal foil formed by cold reduction of hot dip aluminum coated ferritic steel strip containing from 10% to about 35% chormium, up to 3% aluminum, and up to 1% silicon, the foil having a ratio of aluminum coating thickness on both sides to base metal foil thickness of at least 1:10, which at least 4% by weight total aluminum. The method of production includes heating the foil in an oxidizing atmosphere within specified temperature and time limitations to provide a porous surface having a thin layer of aluminum oxide. The foil is adapted for fabrication into monolithic support structures for catalytic converters for internal combustion engine exhaust systems.

Abstract: A method for performing differential etching of material by using electromagnetic radiation. Material having two predetermined regions is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that both of the predetermined regions of the material are etched simultaneously and each of the predetermined regions is etched at a rate independent of the etching rate of the other of the predetermined regions. In an alternate embodiment, a substance having at least two materials is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that the time required to etch one of the materials is substantially equal to the time required to etch any selected combination of the materials remaining.

Abstract: A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.

Abstract: The invention facilitates application of light colored inscriptions of arbitrary size on a dark colored key body, the key body consists of a dark colored base component and a light colored component which bears the inscription, which are produced by two-color injection. The light colored component which bears the inscription is then darkened by thermal diffusion, with the exception of the inscription.

Abstract: A multilayered composite product useful as an electrical circuit is produced by coating a base with a photoimagable resin free of catalyst or catalyst activator for electroless metal deposition. The resin is patterned by exposure to a desired light, through a mask followed by development. The patterned cured resin is selectively chemically modified while avoiding chemical modification of the base to render the cured resin receptive to a metal catalyst. The metal catalyst which promotes subsequent electroless metal deposition is selectively absorbed on the patterned cured resin and is converted to a catalytically active form. A conductive metal then is deposited selectively on the catalyst-containing patterned cured resin.

Abstract: A method for generating an area of increased conductivity on the surface of a body of dielectric material, such as for the purpose of attaching electrodes or other electrical interconnections to the area includes the steps of enclosing the surface within a reducing atmosphere and irradiating the portion of the surface corresponding to the desired conductive area with laser radiation for a selected period of time. The atmosphere may be a hydrogen atmosphere at a pressure in the range of 0-1000 HPa. Additionally, the surface may be preheated prior to irradiation.

Abstract: An optical system for determining and reproducing spatial separation of features in the range of 80 .ANG. to 2500 .ANG. for optical microscopy and lithography using visible light, the system being independent of the wavelength of the incident light.An aperture mask is provided having at least one aperture of between about 80 .ANG. and 2500 .ANG. diameter. The mask may be used in optical microscopy to view objects with a high degree of resolution by placing the mask within the near field of light emanating from a sample to be viewed. The mask may also be used for high resolution optical lithography by placing a resist material within the near field of light passing through the mask.

Abstract: A bilevel photoresist process employs a first relatively thick photoresist layer deposited over the surface to be patterned. The entirety of this first photoresist layer is exposed to actinic ultraviolet radiation and thereafter subjected to a heat treatment so as to effectively desensitize the layer to the action of a developing agent. Patterning of this first layer is accomplished by depositing a second, relatively thin photoresist layer on the effectively planarized surface of the first layer, selectively exposing the second layer to a mask pattern to be used for patterning the underlying semiconductor structure and thereafter developing the second layer of photoresist. Because of its thickness the first layer effectively acts as an optical buffer between the second relatively thin layer and any underlying metallic reflective interface, so that optical notching of the second layer of photoresist cannot occur.

Abstract: A steel article which is made of carbon or low alloy steel, with a prescribed chemical composition, is heat treated so that its yield strength is increased to a minimum of 60,000 psi and is subsequently dipped or spray covered with aluminum and then heated to interdiffuse aluminum metal and the iron in the steel matrix, thereby forming a new intermetallic layer which is an integral part of the steel article and which is essentially an aluminum-iron alloy, all in a manner which does not lower the yield strength of the steel below 60,000 psi. In the preferred form of the invention, a steel article is austenitized above its critical temperature for about 15 minutes or more and is subsequently rapidly cooled to below 600.degree. F. to transform the austenite structure to a much stronger martensitic structure and is then reheated to below 1341.degree. F. to temper the martensite.

Abstract: A process for chemical and thermal treatment of steel workpieces accompanied by the formation thereon of a coating includes diffusive precipitation onto the base metal of the workpiece of an intermetallic compound from a melt of a low-melting-point metal, such as sodium or lithium, at a temperature of from 720.degree. to 820.degree. C. for a duration of time necessary for obtaining a coating layer of required thickness.

Abstract: In the electrolytic production of aluminum by electrowinning or electrorefining processes, cell components such as cathode current feeders which in use are normally covered with molten aluminum are made of a composite material of aluminum or an aluminum alloy or intermetallic compound with an aluminum oxycompound, usually alumina, and possibly containing minor amounts of additives such as borides carbides, nitrides or oxides. The composite material, which remains mechanically stable and electrically conductive at 1000.degree. C., may be prepared by hot pressing powders at 1000.degree.-1700.degree. C. possibly after surface treating the alumina to improve wettability by molten Al. The components are optionally coated, e.g. with TiB.sub.2. The composite materials are also useful as non-current carrying components, including separator walls, weirs, packing elements and baffles.

Abstract: A multiple-zone junction termination extension region is formed adjacent a reverse-blocking junction in a semiconductor device to increase the breakdown voltage of such device. A single mask is used to form the multiple-zone JTE region, with the mask having different patterns of openings in the different zones of the mask. Adjacent openings are maintained with a center-to-center spacing of less than 25 percent of the depletion width of the reverse-blocking junction in a voltage-supporting semiconductor layer adjoining the reverse-blocking junction at the ideal breakdown voltage of the junction. As a consequence, the resulting non-uniformities in doping of the various zones of the JTE region are negligibly small. An alternative JTE region is finely-graduated in dopant level from one end of the region to the other, as opposed to having multiple zones of discrete doping levels.

Abstract: The invention consists in a process for consecutively coating a metal band with at least two different coating alloys, on one production line, whereby, to pass from a first product to the second, a secondary tank (8) containing the second alloy is disposed in the main tank (2).The process is used for the continuous production of coated metal sheets.

Abstract: This invention relates to a structure of a registration mark for electron beam exposure technique. The mark comprises a lower metal film formed on a semiconductor substrate such as GaAs substrate having high electrical resistivity, and a upper metal film formed on the lower metal film and having a raised or indented crisscross shape. A connecting portion is connected electrically to the lower metal film and extends on the substrate. According to this structure, charge that has been built up in the registration mark by many scanning actions can be discharged through the connecting portion and hence, accurate registration is possible.

Abstract: A method of plating a pattern of metal (e.g. copper or nickel) on a dielectric surface, i.e. surface of a dielectric material such as a synthetic resin or ceramic. The method comprises the preliminary step of masklessly treating the dielectric surface to selectively activate preselected areas thereof so that the dielectric surface in contact with a priming solution becomes catalytic, and thereby receptive to electroless metal deposition, selectively at those areas. The treated dielectric surface is contacted with an electroless plating solution to allow metal therefrom to auto-reductively deposit selectively at those catalized areas, thereby forming the pattern of metal desired on the dielectric surface.

Abstract: The novel optical recording medium, as in the prior art, has a transparent substrate bearing two recording layers, each addressable from only one side of the medium, but unlike prior 2-sided media, the two recording layers are on the same face of the substrate. When the novel medium is addressed from one side of the substrate, a thin-film barrier, such as an opaque metal, between the two recording layers prevents the more distant recording layer from responding to that energy. Preferably a tough, transparent cover layer is sealed to the substrate to protect the two recording layers.

Abstract: In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al.sub.2 O.sub.3, is used and the etching is carried out in a fluorine-containing plasma. By this means, etching selectivities of more than 100 are achieved for a substrate (2) of silicon.

Abstract: A method of enhancing first order alignment marks formed in the respective layers of a processed semiconductor wafer in which critical masking steps are carried out. After a given mark is formed, it is tested for visual contrast. If the contrast is insufficient to provide adequate alignment, a block mask is formed on the critical mask. The block mask exposes all of the alignment target areas and protects the product regions of the wafer, and the critical mask only exposes the mark to be enhanced. The mark is then etched for a time period which is a function of the measured visual contrast. This method of selectively enhancing selected ones of the first order alignment marks greatly enhances the utility of such marks, increasing the accuracy of critical masking steps.

Abstract: In an information recording medium comprising a substrate and a recording layer, the recording layer is formed from a germanium-tin material. Recording light may be conducted to the layer where amorphous-crystalline phase transition or crystal form change occurs.

Abstract: A process for forming an ultrafine pattern on a surface of a substrate, which includes steps of irradiating the substrate surface with radiation modulated according to information to be patterned, subjecting the substrate surface to deposition with a material reactive or not with the substrate, and subjecting the substrate surface to etching if a substrate-reactive material is used for deposition. By this process, an ultrafine pattern can easily be formed with a high accuracy.

Abstract: A low-titanium alloy steel foil having a cold rolled metallic aluminum hot-dip coated surface which is adapted for growing a thick surface coating of spine-like whiskers of aluminum oxide suitable for retaining a coating of a metallic catalyst, which is formable at room temperature without annealing, and which exhibits good resistance to oxidation at temperatures up to 1149.degree. C. (2100.degree. F.).

Abstract: A method of producing multicomponent diffusion coatings on metal articles mprises the steps of separately dissolving in a transport melt the alloying elements at temperature T equalling 0.5 to 0.8 of their respective melting points, and saturating with these alloying elements by diffusion the surface of a metal article at temperature T.sub.1 equalling 0.3 to 0.5 of the melting point of the material of this article, with the difference T-T.sub.1 being at least 50.degree. C. To perform this method, the apparatus comprises a central chamber for accommodating the transport melt and the metal article to be coated, and two (in one embodiment) peripheral chambers for accommodating the transport melt and the respective individual alloying elements, communicating via ducts. All the chambers and ducts have heating elements arranged thereon.

Abstract: The invention relates to a not as yet considered kind of corrosion of products made of silicon carbide working in elevated temperatures and discloses a method of preventing this kind of corrosion which begins already at the moderate temperature of about 550.degree. C. and is caused by the formation of carbon monoxide in the pores of the interior of the silicon carbide products in conditions of limited penetration of oxygen into these pores.

Abstract: A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

Abstract: A solar cell fabrication procedure is described which is characterized by (1) removal of the front surface electrode plating mask after preliminary metallization of the front surface electrodes, (2) a passivation step which, inter alia, results in the formation of an altered silicon substrate surface layer, and (3) use of the altered surface layer as a plating mask for subsequent metallization steps involving, for example, immersion plating of nickel and immersion plating or electroplating of copper.

Abstract: A layer of electron sensitive resist on a semiconductor substrate is exposed to a patterned electron beam emitted from an erasable photocathode mask in an electron image projector. The mask is formed from a transparent plate, such as quartz, on which a layer of caesium iodide or other photoemissive material is provided. A photoemissive pattern is defined in this layer by selective direct exposure to a beam of photons, electrons, or ions, preferably in an evacuated environment containing carbon whereby the photoemission of the exposed areas of the layer is lowered. Alternatively, using a beam of charged particles with a relatively high current density, the exposed parts of the layer are actually removed by evaporation. In either case, the patterned layer can be removed by rinsing in water and the transparent plate can be reused with the same or different photoemissive pattern.

Abstract: A process and product is presented for obtaining selective areas of distinctive appearance, i.e., matting on synthetic coverings. This process includes, depositing a polymer coating which contains at least one first initiator for polymerization onto at least a first selected area or zone on an expandable or nonexpandable support substrate. Next, at least one second coating comprised of a crosslinkable monomer containing at least one second polymerization initiator is deposited onto a second selected area on the substrate. This second area or zone may encompass at least a portion of the first area. The first and second initiators should be triggered by distinct "spectral zones", i.e., a range of temperature conditions, frequency conditions, etc. capable of decomposing the initiator to form free radicals or ions needed for chain propagation in a polymerization reaction.

Abstract: A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Al(CH.sub.3).sub.3, WCl.sub.6 etc.

Abstract: A molded porous silicon carbide body in the shape of an armor plate, made by coking a mixture of carbon and silicon powder coated with an organic binder to which some silicon carbide powder may be added, and then rapidly raising the temperature to a level at which silicon carbide is formed, is impregnated so that its pores are filled with steel or a steel alloy to produce a plate that has the hardness and stiffness of silicon carbide and the toughness of metal. The plate has superior resistance to hollow or shaped explosive charges. The lower density provided by the silicon carbide favors its use in armored vehicles.

Abstract: Three-dimensional polymerization of resin glass on an underlay surface may cause uneven distribution of the layer and therefore uneven etching of the glass layer in subsequent processing. The glass remaining after an etching step can cause difficulties in further processing of the structure, such as causing metal opens in a metallization step. In order to control the three-dimensional polymerization; the underlay surface is treated with a short plasma treatment. The plasma oxidizing step renders the surface acidic, forcing the glass polymerization to occur in a two-dimensional mode thereby eliminating the threat of uneven distribution and its repercussions.

Abstract: A thermal imaging method for forming color images is provided which relies upon the irreversible unimolecular fragmentation of one or more thermally unstable carbamate moieties of an organic compound to effect a visually discernible color shift from colorless to colored, from colored to colorless or from one color to another.

Abstract: A mask for corpuscular lithography permits a short exposure time for generating structures on semiconductor wafers, and provides a cost reduction of such structure generation. The mask has a tunnel cathode in corpuscle-emitting regions.

Abstract: A component for an aluminum production cell comprising a refractory matrix having a rigid porous structure substantially filled with aluminum.

Abstract: A method of forming a resist micropattern in the manufacture of semiconductor devices. This method comprises first forming a multilayered resist films on a substrate, the uppermost film of which is selected to be a highly sensitive resist film 0.05 to 1.0 .mu.m in thickness, forming an uppermost resist pattern including a desired patterned groove, forming a mask film only in the groove, and dry etching the resist excluding that beneath the mask film in the groove thereby forming a resist micropattern.

Abstract: Disclosed herein are a recording paper which is partially pressure-sensitized, comprising microcapsules containing a solution of a colorless color former, sheet material and binder, the microcapsules being fixed to a specified part of a surface of the sheet material via the binder painted on the specified part and majority of the fixed microcapsules having at least a part of the microcapsule exposed to outside of the binder, and a process for producing the recording paper which is partially specified.

Abstract: For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the el

Abstract: A thermosensitive recording label includes a substrate, a thermosensitive color-forming layer disposed on one side of said substrate, a protective layer disposed on the thermosensitive color-forming layer, and electron beam setting printing ink disposed in a preselected pattern on the protective layer, a pressure-sensitive adhesive layer disposed on another side of the substrate and a releasing bold backing sheet disposed on the pressure-sensitive adhesive layer. A visible pattern is thereafter created by exposing the thermosensitive recording label to an electron beam to set, or cure the electron beam setting ink. The electron beam setting ink may be printed additionally on the substrate and the backing sheet to enable product coding information to be printed on the substrate as well as the printing of a manufacturer's logo on the backing sheet.

Abstract: A process for forming a self-aligned resist mask over a surface of an alumina ceramic substrate having a conductive molybdenum pattern at said surface by first blanket coating the surface with a negative resist sensitive to aluminum emitting X-rays. A blanket dosing of the substrate with resist insensitive X-rays occurs to induce X-ray emission by the aluminum of said substrate to penetrate said resist. The aluminum X-ray emission is screened by said molybdenum pattern at the surface and the resist adjacent the surface molybdenum pattern is penetrated by the aluminum X-ray emission. The resist is developed for removal thereof over the molybdenum pattern while retaining the resist doped by said aluminum X-ray emission. Further metalization can be accomplished by evaporation or sputtering to blanket coat the developed resist with a conductive metal followed by removal of the resist with the metal coating thereon such that the metal coating is retained on the molybdenum pattern.

Abstract: An anti-reflective coating film is formed on a resist film formed on a substrate having a target pattern formed on its surface, thereby to reduce multiple reflection of light in said resist film. The distortion of the pattern detection signal due to multiple reflection in said resist film is thereby prevented to improve the mask positioning accuracy.

Abstract: Aluminum metal piece is dipped into a molten aluminum alloy brazing filler metal covered with a flux layer melted by heat of the molten filler metal, and thereafter is taken out therefrom. Thus, the aluminum metal piece is readily coated with a double coating film of the aluminum alloy brazing filler metal and the flux coating film.

Abstract: A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface comprising the steps of applying an electrical pulse signal across the semiconductor layer at the desired region to lower the resistivity of the region and then forming an electrode film on the desired region of said semiconductor layer opposite said conductive surface, is disclosed. In one alternative embodiment, an electrode film is formed on the thin film semiconductor layer and thereafter an electrical pulse signal is applied across the semiconductor layer at the desired region to lower the resistivity of the region.

Abstract: A method for depositing composite metallic coatings on a metallic strip, involves bringing in contact with a metallic coating, deposited on the strip by using a continuous dip coating method, before setting of the metallic coating, an additive metal powder in suspension in a gaseous jet. The melting point of the additive metal powder is higher than that of the base coating metal, so that the additive metal powder particles penetrate into the coating in order to obtain a composite structure imparting to the strip an increased corrosion resistance, compared to that provided by a base coating free from additive metal.

Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

Abstract: A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.