Abstract: The present invention resides in an optically black article comprising a substrate and an optically black coating adhered to the substrate. The coating has an absorptivity of at least about 0.92 and an emissivity of at least about 0.85, obtained by plasma spraying onto the substrate a composition comprising about 20% to about 50% by weight of a carbonyl metal and about 80% to about 50% by weight of a ceramic metal oxide. A preferred carbonyl metal is carbonyl iron. A preferred ceramic metal oxide is a yttria stabilized zirconia, having an average particle size in the range of about 10 microns to about 106 microns (140 mesh).

Abstract: A composition for absorbing electromagnetic radiation (such as microwave, infrared, visible light radiation ultraviolet radiation), wherein said electromagnetic radiation possesses a wavelength generally in the range of from about 1000 Angstroms to about 50 meters, wherein said composition comprises a polyaniline composition of the formula ##STR1## where y can be equal to or greater than zero and R' and R.sub.2 are independently selected from the group consisting of --H, --OCH.sub.3, --CH.sub.3, --F, --Cl, --Br, --I, --NR.sup.3.sub.2, --NHCOR.sub.3, --OH, --O, --SR.sup.3, --OR.sup.3, --OCOR.sup.3, --NO.sub.2, --COOH, --COOR.sup.3, --COR.sup.3, --CHO, and --CN, where R.sup.3 is a C.sub.1 to C.sub.a alkyl, aryl or aralkyl group.

Abstract: Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.

Abstract: A process for treating an electrode to form a protective coating comprising applying a precursor of an impregnate material to the surface, controlling the depth of penetration, induction heating the surface under controlled conditions of power, frequency and relative velocity to bring the surface to the treat temperature and quench cooling the surface.

Abstract: A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face.

Abstract: An automated coating apparatus includes a coating unit for applying a curable liquid material to the entire edge-to-edge surface area of one side of a flexible sheet. The sheet is then received on a rotatable drum adjacent the curing device, and moved back and forth next to the curing device to cure the liquid material. The drum includes a plurality of apertures in communication with a regenerative blower for retaining the sheet on the drum during the curing operation without contacting the uncured liquid material on the opposite face of the sheet. The curvature of the drum functions to essentially counteract the tendency of the sheet to curl during the curing operation.

Abstract: The invention provides a process for cleaning and subsequent coating of metal surfaces of substrates. The metal surfaces are cleaned with a microwave-excited plasma using oxygen and hydrogen, alternately, as a working gas. The cleaned metal surface is coated by physical vapor deposition (PVD) or plasma enhanced chemical vapor deposition (PECVD).

Abstract: Apparatus and method for continuously forming sputter-coated glass fibers. The apparatus includes a sputter vessel into which freshly drawn fiber is passed before surface contamination can occur. The sputter vessel includes modular sputtering units which are arranged to provide sputter deposition of one or more coatings onto the fiber or capillary tube as it passes through the sputter vessel. Roughing chambers may be provided on either end of the sputter vessel and include orifices sized to allow passage of the fiber through the orifice without contact. An improved sputter coating apparatus is also disclosed.

Abstract: A method of handling books between a library and a treatment site in which the books are held against relative movement during transit but are released during treatment.

Abstract: A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation, to thereby generate plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuoulsy moving circumferential wall which is exposed to said plasma.

Abstract: A microwave plasma CVD apparatus for the formation of a functional deposited film includes a gas supply pipe to which a bias voltage is applied so as to form an electric field between the gas supply pipe and a substrate onto which the film is deposited.

Abstract: A continuous process for coating a series of workpieces with a metal coating comprises the steps of cleaning the workpieces with a high-pressure water system which utilizes particulates; isolating the workpieces in a non-oxidizing chamber; spraying the workpieces with a wet flux; inductively preheating the workpieces with a preheat induction coil; spraying a coating metal onto the surface of the workpieces; inductively heating the workpieces with a main induction coil; and continuously conveying the workpieces through each of the above steps.

Abstract: A microwave plasma film deposition system comprises a waveguide for feeding microwaves through a microwave feeding window provided at one end of the waveguide, and a plasma cavity in communication with the other end of the waveguide and having a discharge gas inlet which is not in communication with the waveguide. The system further includes a specimen chamber which is in communication with the plasma cavity and which has a substrate setting rest therein and a material gas inlet, and a magnetic field applying device provided near the plasma cavity. Stable film deposition occurs because the plasma cavity is at the end of the waveguide which is remote from the microwave feeding window, whereby deposition on the microwave feeding window is prevented. Deposition on the microwave feeding window is further prevented by a ferromagnetic material which is placed around the waveguide and which reduces the strength of the magnetic field in the waveguide.

Abstract: A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.

Abstract: Layers of ceramic paint are applied to a surface of a glass sheet in a process wherein each layer of paint is dried by microwave energy before a successive layer of ceramic paint is applied thereover.

Abstract: A process for producing anti-wicking and water repellant polyester yarns at high processing speeds. Polyester yarn or other heat stable yarn is continuously fed to a coating station, the yarn is then coated with a fluorocarbon polymer emulsion or dispersion and the yarn is dried in an RF oven, heat cured in a coating oven, and then wound.

Abstract: An optical fiber is formed by continuously coating a precursor core filam with a glass-forming coating. The precursor filament is continuously moved from a storage reel through a stationary coating station. The filament is then moved through a stationary glass-forming station and is continuously processed to convert the coating to a glass, with the core either removed from the fiber during glass forming or becoming an integral part of the ultimate fiber during glass forming. The glass fiber is then moved continuously through a glass densification station and is densified in a continuous process. The fiber is thereafter provided with a protective coating as it moves through a stationary coating station and the completed optical fiber is continuously reeled.

Abstract: A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.

Abstract: Method of depositing microcrystalline solid bodies from the gas phase by means of Chemical Vapor Deposition (CVD) in which the solid particles are deposited on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. at a pressure ranging between 10.sup.-5 and 1 bar and at a directed gas flow, in which method the reactant gas is passed through a porous intermediate body having a thickness of between 2 and 30 mm of a material suitable for use at temperatures up to 2500.degree. C., which intermediate body is present in the zone having the maximum energy content within the reactor, while the reactant gas is excited in said intermediate body, whereafter the solid particles are deposited on the substrate.

Abstract: A two-step process for the preparation of a thallium-containing superconductive film is described.In the first step of this process, an aerosol mist containing reactants necessary to produce a calcium/barium/strontium/copper precursor material is provided. This mist is subjected to radio-frequency radiation while in the plasma region, and it thereafter is deposited onto an electrically grounded substrate.In the second step of the process, the coated substrate is contacted with thallium-containing vapor.

Abstract: There are disclosed a diamond-coated sintered body, comprising a film or diamond and/or diamond-like carbon deposited on the surface of a sintered body of a hard phase composed mainly of a mixture of W.sub.2 C and WC and inevitable impurities and a process for preparing the same.

Abstract: In a microwave plasma CVD apparatus in which material gas is formed into plasmas by electric discharge of microwaves in a plasma generating chamber provided with a first magnetic field generating device introduced into a deposition chamber and reacted with starting material gas introduced in the deposition chamber, to form a deposited film on a substrate, a second magnetic field generation device is situated at the rear side of a substrate table disposed in the deposition chamber with one of the magnetic poles thereof being faced to the magnetic pole, at the opposite polarity, of the first magnetic field generating device situated on the side of the deposition chamber, so that the time-averaged magnetic flux density is made uniform on the surface of the specimen substrate, thereby making the plasma density more uniform on the substrate and making the distribution of the deposited film thickness more uniform.

Abstract: Process for protecting a transparent optical substrate which is polymeric and has a vitreous transformation temperature and is selected from the group consisting of polycarbonate, polymethylmethacrylate, polystyrene acrylonitrile, crystalline polystyrene, polyimide, polyester, polyamide, polyvinyl chloride and glass, by deposition of an inorganic continous and transparent film consisting essentially of silicon, carbon, nitrogen, oxygen and hydrogen of the formula Si C.sub.x N.sub.y O.sub.z H.sub.t, in whichx is between 0 and 5y is between 0.3 and 0.8z is between 1.3 and 2.5t is between 0.5 and 1.2.A surface of the substrate is exposed to a plasma at a temperature below the temperature of vitreous transition of the substrate in the presence of precursors of Si, C, N, O and H is gaseous form, the precursor gas of the silicon being selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and Si.sub.3 H.sub.

Abstract: A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.

Abstract: A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity.

Abstract: Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.

Abstract: A composite susceptor for forming uniform deposits by chemical vapor deposition. The composite susceptor has an electrically conducted layer of material disposed on a block of material which is adapted to be heated by an induction heating coil. The conductive layer is electrically biased to control the geometry of the gas plasma. By electrically controlling the geometry of the gas plasma, more uniform deposition of a material on a substance is achieved. A composite susceptor having a segmented conductive layer for producing a graded electrical profile and a conductive ring surrounding a gas plasma are also described. In one aspect, a phase-shifting layer of material is disposed on the conductive layer.

Abstract: A beam or flow of a reactive or metastable precursor such as a hydride or organometallic compound is created, and this beam or flow is used to treat (e.g. dope or coat or otherwise modify) a substrate, e.g. an advanced material such as a semiconductor layer, a photovoltaic cell, or a solar cell. The beam or flow can also be directed into a storage zone so that the precursor or precursors can be collected for future use. The beam or flow is created in an apparatus comprising at least three zones. Zone 1 is irradiated with microwave energy to generate a reactive gas rich in free radicals (e.g. rich in H.sup.., CH.sub.3.sup.., etc.) zone 2 (downstream from zone 1) is substantially free of microwave energy and contains a target which is impinged upon by the free radicals and becomes a source of the precursor; zone 3 (downstream from zone 2) is where the precursors are either collected for storage or are used to treat the substrate. In a typical apparatus of this invention, a feed gas such as H.sub.2 or CH.sub.

Abstract: A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern.

Abstract: A method of permanently modifying the surface of a substrate material so as to develop a microscopically smooth, biocompatible surface thereon comprises covalently grafting at least a first biocompatible material, preferably having pendant terminal carboxylic acid or amine groups, to the surface of the substrate material by radio frequency plasma-induced grafting. In addition, a method of permanently modifying the surface of the substrate material comprises cross-linking a second biocompatible material to the first biocompatible material grafted to the substrate material using a cross-linking agent. Further, a prosthesis used in mammals, including an intraocular lens, comprises a polymer core and at least a first biocompatible material, preferably having pendant terminal carboxylic acid or amine groups, covalently grafted to the polymer core by radio frequency plasma induction.

Abstract: A method of preparation of an absorbent composite in which an aqueous solution containing a water-soluble radical polymerization initiator and a water-soluble ethylenically unsaturated monomer which can be converted into an absorbent polymer by polymerization is applied to a substrate, and the monomer is polymerized while the substrate to which the aqueous solution is applied is, on both the sides, held in contact with polymerization-inert surfaces facing each other. A continuous manufacturing method includes the sequential steps of continuously passing a substrate through (1) a region applying to the substrate an aqueous solution containing a water-soluble radical polymerization initiator and a water-soluble ethylenically unsaturated monomer which can be converted into an absorbent polymer by polymerization, and (2) a region of polymerizing the monomer while maintaining the substrate, on both the sides, in contact with polymerization-inert surfaces facing each other.

Abstract: An extrusion is coated with a resin by passing the extrusion continuously through a belt-shaped plasma formed by means of a stationary annular electron cyclotron resonance magnet which completely surrounds the extrusion. The resin coating is produced by plasma polymerization of a monomer using microwaves having a frequency of 2.45 GHz.

Abstract: A composition for absorbing electromagnetic radiation, wherein said electromagnetic radiation possesses a wavelength generally in the range of from about 1000 Angstroms to about 50 meters, wherein said composition comprises a polyaniline composition of the formula ##STR1## where y can be equal to or greater than zero, and R.sup.1 and R.sup.2 are independently selected from the group containing of H, --OCH.sub.3, --CH.sub.3, --F, --Cl, --Br, --I, NR.sup.3 .sub.2, --NHCOR.sup.3, --OH, --O.sup.-, SR.sup.3, --OCOR.sup.3, --NO.sub.2, --COOH, --COOR.sup.3, --COR.sup.3, --CHO, and --CN, where R.sup.3 is a C.sub.1 to C.sub.8 alkyl, aryl or aralkyl group.

Abstract: A method for preservation treatment of wood comprises the steps of radiating a laser beam on a part of the surface of the wood at the least to form small holes therein, impregnating the wood with a preservative, and then applying high frequency waves to the wood to dry it by dielectric heating.

Abstract: A microwave plasma CVD apparatus includes a hermetically sealed vacuum vessel, a device for evacuating the vacuum vessel, and a device for introducing microwaves through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits, one of which is a plunger for varying the length of the cavity resonator and the other of which is a pair of sliding matching irises. Feedback in the apparatus can be controlled by driving one of the matching circuits for rough matching of the microwave impedance and driving the other matching circuit for fine matching of the microwave impedance, so that the calculated ratio of the reflected power to the input power, based on a signal from a power monitor, is reduced to a minimum.

Abstract: An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent of 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less.

Abstract: The invention relates to an apparatus for producing a plasma and treating substrates therein. The plasma produced by means of microwaves serves to coat a substrate which is situated in a chamber (5) having metal walls (6,7,12,13). The microwaves are repeatedly reflected at the metal walls (6,7,12,13), so that the chamber (5) has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber (5) or outside the chamber (5) in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber (5) an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Abstract: An abrasion-resistant article and method for making is disclosed. The article includes a plastic substrate and a gradational coating applied by plasma-enhanced chemical vapor deposition to the surface thereof.

Abstract: A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a nonreactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.

Abstract: The disclosure herein describes a process for modifying large polymeric surfaces; a thin, uniform coating is deposited at near ambient temperature on the surfaces in a large-volume plasma apparatus, the plasma state being produced by using electromagnetic energy in the microwave frequency range. The surfaces thus coated constitute a barrier against permeation by oxygen and moisture.

Abstract: An improved plasma chemical vapor reaction apparatus is described. The apparatus comprises a reaction chamber, a gas feeding system for introducing a reactive gas into the reaction chamber, Helmholtz coils for inducing a magnetic field in the reaction chamber, a microwave generator for inputting microwaves into the reaction chamber, a substrate holder for supporting a substrate to be treated in the reaction chamber. The substrate holder is located with respect to said magnetic field inducing means in order that the graduent vector of the strength of the magnetic field induced by the Helmoholts coils is directed toward the substrate in the vicinity of the surface of the substrate to be treated. By virtue of the magnetic field caracterized by such a gradient vector, the plasma gas in the reaction chamber is drifted toward the substrate.

Abstract: A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outs

Abstract: A film forming method and an apparatus therefor, in which reactant gas and carrier gas set in 10 torr through several atms very higher than the conventional plasma CVD gas pressure are put in a plasma condition of high density by utilizing standing waves or progressive waves of the microwave in a predetermined space, and then neutral radicals and ions of reactant species based on the reactant gas are guided to a substrate, thereby high-speed forming a thin film thereon.

Abstract: Layers consisting of vinylidene fluoride polymers or vinylidene fluoride/trifluoroethylene copolymers can be prepared with a thickness of <10 .mu.m, whereby the dielectric constant or the ferroelectric properties simultaneously correspond to those of known materials. Vinylidene fluoride or a mixture of vinylidene fluoride and trifluoroethylene in a concentration of .ltoreq.5.times.10.sup.-9 mol/cm.sup.3 is subjected to a low pressure plasma polymerization which is excited by microwaves, and the polymer or copolymer is deposited onto a substrate at an electric field strength of <850 V/cm.

Abstract: A method of forming a conductor pattern on a dielectric substrate and a firing furnace thereof are disclosed, the method comprising; a step of passing an electric current through coils wound on the outside of insulation wall of a firing furnace in order to produce an induction magnetic field; and a step of arranging the metal conductor components of the metal paste conductor printed on the dielectric substrate into a uniform state by means of the magnetic field, and the firing furnace comprising; coils wound on the outside of insulation wall of the firing furnace having a through passage; and a heat protection wall additionally installed. According to the present invention, the resistance value of the metal components of the conductor is reduced, with the result that the poser loss of a gas discharge display device due to a high resistance value can be prevented, and that the process can be reliably carried out.

Abstract: A plasma or photo-induced chemical vapor deposition coating process and apparatus are provided for applying thin dielectric coatings on planar, curved, and large area substrates. A plasma is generated in a tubular outer conductor. This plasma or the UV radiation occurring in the plasma passes through an opening into a reaction chamber. The opening preferably extends axially along the outer conductor and communicates with the interior of the reaction chamber. At least one component of the reaction gas is introduced directly to the opening or into the reaction chamber adjacent to the opening, bypassing the outer conductor. In this apparatus, the reactive deposition of a coating onto a substrate occurs only in the reaction chamber and below the opening from the outer conductor.

Abstract: A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means.

Abstract: The present invention is directed to a method of producing a sintered hard metal having a diamond film wherein a gas that is obtained by activating a raw material gas containing 2 to 60 mol % of carbon monoxide and hydrogen gas is brought in contact with a sintered hard metal to form a diamond film, thereby a diamond film can be formed on said sintered hard metal with the adhesion of the diamond excellent.

Abstract: A method for reducing the tendency of a surface of a material to foul when exposed to a potential foulant comprises the step of treating the surface of the material with a plasma of a compound containing or generating hydroxyl groups to render the surface hydrophylic but substantially uncharged.The materials may be inorganic, e.g. glass, or organic, e.g. polyamide, and may be in the form of fibers, woven fabrics, membranes or plates. Suitable compounds containing hydroxyl groups include ethylene glycol and water.

Abstract: An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction.