Abstract: A method in integrated circuit technology of depositing an adherent aluminum film that does not develop significant protrusions, such as "hillocks" and "whiskers", during or following annealing. The aluminum is deposited by evaporation or sputtering techniques while sufficient dry oxygen is introduced periodically into the deposition chamber to form alernating layers of aluminum and oxygen-doped aluminum consisting of no more than 10 atomic percent oxygen. Photolithographically patterning such a laminated film into the appropriate configuration of conducting lines and bond pads, and subsequently annealing such as a laminated film at temperatures from 450.degree. C. to 560.degree. C. in forming gas, results in aluminum surfaces that are free of protrusions with heights above 0.5 .mu.m and in films that have relatively low resistivity, i.e., resistivity that is less than 1.8 times the resistivity of bulk aluminum. The laminated films range in thickness between 8000 to 25,000 angstroms.

Abstract: High quality cast-coated paper is obtained with high productivity by applying an aqueous coating composition containing a coating pigment and a binder to the surface of base paper by means of a blade coater to form an undercoating layer, the application rate being from 5 to 25 g/m.sup.2 on dry basis per side; then applying to said undercoating layer an aqueous coating composition containing a coating pigment and a polymer latex having a glass transition point of 38.degree. C. or higher to form an overcoating layer, drying said overcoating layer at a temperature below the glass transition point of the latex in said overcoating layer; and subjecting it to mirror finish treatment at a temperature higher than said glass transition point.

Abstract: A method of absorbing resin into part of a panel of particleboard to provide local strength increases in that part. The method comprises subjecting the part to an electric field, immersing the panel in the resin; and then resubjecting the panel to the electric field to cure the resin. A particleboard panel is also disclosed. The panel has a main body with a specific gravity in the range 0.2 to 0.5 but at least one area on its periphery has a specific gravity in the range 0.7 to 1.0. The one area is impregnated with a synthetic resin. The panel is particularly useful in door production as it is strong but cheap.

Abstract: In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300.degree. C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.

Abstract: A method of cooling induction-heated vapor deposition apparatus including an electrically grounded deposition enclosure and a RF induction heating coil having essentially electrically uninsulated turns thereof disposed about the deposition enclosure, comprises the step of spraying deionized liquid having a resistivity of at least 14 megohms-om directly onto the apparatus.

Abstract: Capacitive electrical heating of a fluidized bed enables the individual solid particles within the bed to constitute the hottest portion thereof. This effect is achieved by applying an A. C. voltage potential between dielectric coated electrodes, one of which is advantageously the wall of the fluidized bed rejection zone, sufficient to create electrical currents in said particles so as to dissipate heat therein. In the decomposition of silane or halosilanes in a fluidized bed reaction zone, such heating enhances the desired deposition of silicon product on the surface of the seed particles within the fluidized bed and minimizes undesired coating of silicon on the wall of the reaction zone and the homogeneous formation of fine silicon powder within said zone.

Abstract: A process for encapsulating electrical components with a continuous layer of synthetic resin material contemplates induction heating of the component by high frequency current with the component leads covered by heat insulating material, and subjecting the heated component to a vortex bath of synthetic resin powder so as to fuse or sinter the powder to the component. Because the leads have not been heated, no resin is sintered thereto, so that scraping or other removal of resin from the leads to make electrical contact therewith need not be undertaken as an additional step. During hardening of the resin the heat insulation may be left in place on the leads to allow the hardened resin to form "feet" on a base of the component, or the heat insulation may be displaced slightly to allow flow of the hardening resin around the lead without forming a fillet.

Abstract: An RF-excited radial-flow, cylindrical plasma reactor (10) includes a toroidal waveguide (17) of rectangular cross-section connected to a microwave source (21). One of the reactive species (37) is flowed through the waveguide and pre-ionized, thus, permitting independent control over the activation of both reactive species.

Abstract: An arrangement is provided for performing a plurality of processes on workpieces, such as silicon wafers, while they remain at a single processing station. The processing operations include scrubbing, coating, developing, and/or baking the wafer without removing it from a work support at the work station. The apparatus includes a transferring device for automatically transferring the wafer from a cassette to a work support. In addition, positioned about the centrally-located work support is a scrubbing device for scrubbing the wafer and a liquid dispensing device for dispensing liquid on the wafer. Each is movable into and out of position over the work support. In addition, the work support is surrounded by a microwave chamber for baking the wafer while it remains on the work support.

Abstract: A printed circuit board and a method of making the same is disclosed wherein a powdered conductive composition is placed on a dielectric substrate in a matrix corresponding to the desired electrical circuit pattern. The powdered conductive composition is then heated by induction so that the conductive particles are sintered to form continuous conductive pathways secured to the dielectric substrate. The use of relatively high frequency induction currents coupled with a relatively small size of the conductive particles results in rapid heating of the powdered conductive composition while leaving the underlying dielectric substrate unaffected by the induction heating.

Abstract: Solar cells are fabricated by spraying a dopant coating onto a semiconductor wafer and heating the surface of the wafer using unipolar microwaves. The resultant controlled heating drives dopant atoms from the coating into the wafer to produce a shallow junction at a selectable depth. Advantageously, metallic conductors are predeposited atop the dopant coating and then sintered to the semiconductor by the same unipolar microwave field concurrently with dopant drive-in. Efficient solar cells can be made with this process using polycrystalline silicon, since with unipolar microwave surface heating the grain boundaries do not become so deeply doped as to short circuit the junctions formed in the individual grains. Unipolar microwave heating also may be used to anneal ion implanted semiconductor devices.

Abstract: High quality cast-coated paper is obtained with high productivity by applying an aqueous coating composition containing a coating pigment and a binder to the surface of base paper by means of a blade coater to form an undercoating layer, the application rate being from 5 to 25 g/m.sup.2 on dry basis per side; then applying to said undercoating layer an aqueous coating composition containing a coating pigment and a polymer latex having a glass transition point of 38.degree. C. or higher to form an overcoating layer, drying said overcoating layer at a temperature below the glass transition point of the latex in said overcoating layer; and subjecting it to mirror finish treatment at a temperature higher than said glass transition point.

Abstract: Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.

Abstract: A reduced pressure induction heated reactor and method for the deposition, especially epitaxial deposition, onto workpieces placed in the reactor. The workpieces are positioned within a hollow susceptor which is, in turn, positioned within a reactor tube. The ends of the reactor tube are sealed by end caps which provide for input and exhaust of reactant species. The workpieces are inductively heated by an RF induction coil which surrounds the reactor tube and which inductively couples with the susceptor. A vacuum pump maintains a low pressure within the reactor tube. Low pressure deposition is made possible without arcing by shorting together the susceptor and end caps and by having the shorted together combination electrically floating.

Abstract: The modified chemical vapor deposition process is practiced using an rf source as the external heat source. An rf plasma is thus established within a glass tube through which appropriate glass precursor vapors are passed. As a result of the ensuing chemical reactions, particulate material is formed within the tube and deposits on it. The hot plasma zone may be used to consolidate this particulate material into a transparent glass, and onto the interior wall of the tube. The tube is subsequently drawn into an optical fiber.

Abstract: Photographic elements are provided with a magnetic recording region, such as a stripe or layer, that is useful for sound recording, by applying a dispersion of finely-divided magnetic particles in a liquid medium to the element in a predetermined form and solidifying the dispersion by bringing the element into contact with an induction-heating apparatus. The apparatus comprises a rotatable cylindrical roller whose cylindrical surface engages the element and which is heated by induction only within a rim portion thereof so as to generate heat adjacent to the cylindrical surface for efficient transfer to the element.

Abstract: Sodium nitrite in liquid form is deposited on a substrate and allowed to crystallize thereby forming a thin layer on the substrate. The substrate is either dipped into a solution containing sodium nitrite or into sodium nitrite in the molten state and then pulled out again. Subsequent drying or cooling of the wetted substrate top surface causes the crystalline film to form. Alternatively, sodium nitrite in a liquid state is applied to the top surface of the substrate and the substrate is rotated to assure an even distribution of the sodium nitrite. Again, drying or cooling causes the crystalline layer to form. The so manufactured unit is shown as part of a pyroelectric radiation detector, as image receiver in a television camera tube and as the storage element in a field effect transistor arrangement.

Abstract: Microwave curing of photoresist films employed in processing semiconductor wafers provides an alternative to conventional drying techniques. The time of curing may be reduced from about 20 to 25 minutes required for conventional air drying to about 5 minutes employing microwave curing. Further, the photoresist film is the only part of the semiconductor assembly that experiences elevated temperatures. The remainder of the wafer remains near ambient conditions, without experiencing possible deleterious effects as a consequence of the high temperature processing.

Abstract: A method for drying a thick wet layer coated on one face of a cardboard sheet, the method being, of the type in which the coated cardboard sheet is fed continuously and a high frequency electric field is applied thereto in such manner that the lines of force of said electric field go only through said thick layer to selectively heat said layer, wherein a further electric field is applied to the coated cardboard sheet in such manner that the lines of force thereof go at least through the cardboard sheet. The method includes starting to apply the further electric field before the first mentioned electric field is applied. Apparatus for performing the method is additionally provided, the apparatus including at least one pair of oppositely polarized electrodes positioned along one face of the cardboard sheet and a second pair of oppositely polarized electrodes positioned along the opposed face of the cardboard sheet.

Abstract: The present invention relates to a method for manufacturing an insulating element, floor element, etc., consisting of bark pieces joined together by a glue material. The bark pieces, which have a piece size of preferably 8-30 mm.sup.3, are coated with a thin layer of the glue material and, after moulding and during pressing to desired element dimension, are heated and fixed by high-frequency energy fed into the element.

Abstract: Metallic coatings are vacuum deposited onto a substrate using more than one eposition method in a single vacuum deposition chamber without breaking vacuum between depositions by providing a vacuum deposition chamber with an RF sputter electrode, a chemical vapor deposition assembly spaced from the sputter electrode, and a substrate that can be rotated from beneath the RF sputter electrode to beneath the chemical vapor deposition assembly, then cleaning and degassing the substrate under vacuum in the deposition chamber, then positioning the substrate below the RF sputter electrode, backfilling the chamber with argon, and then sputter depositing a metal coating onto the substrate and then rotating the coated substrate to beneath the chemical vapor deposition assembly, vacuum pumping the chamber, delivering the material to be chemically vapor deposited to the substrate surface, and heating the substrate to the temperature required for the chemical vapor deposition reaction to take place.

Abstract: An abrasion, scratch, mar and solvent resistant glass coated non-opaque shaped polycarbonate article comprising a polycarbonate substrate having deposited on the surface thereof (i) an intermediate primer layer containing the photoreaction products of certain polyfunctional acrylic monomers; and (ii) a top layer of vapor deposited glass.

Abstract: A polycarbonate substrate is provided with an adherent, hard, abrasion and organic solvent resistant thin glass top coat by initially priming the substrate with a primer coating comprised of the photoreaction products of certain polyfunctional acrylic monomers and thereafter vapor depositing under vacuum onto the primed surface a thin glass top layer, the glass being evaporated by means of radio frequency induction heating.

Abstract: An apparatus for applying latex sealing material to the facing closure flap and opposed body portion of an envelope includes a continuous belt driven conveying means having a generally triangular path, with the envelopes being fed onto the conveying means at one point in the triangle, with the conveying means gripping each of a series of envelopes along its folded edge portion opposite the flap. As the envelopes are conveyed, the flap is first unfolded through an angle of approximately 180.degree. to a generally horizontal position, after which the envelope is passed between an impression roller and a latex applicator roller at which latex is applied to the facing closure flap and the body portion of the envelope. The impression roller and glue roller are disposed at the second point of the triangular path of the conveying means, and next the envelopes are passed through a dielectric dryer for drying the latex sealing material.

Abstract: A gasless ion plating process wherein plating material is melted, vaporized, and then subjected to an ionization environment in a low pressure chamber with a "virtual cathode" consisting of a plasma of ionized atoms of evaporant material created by evaporating in an RF field. It is a gasless ion plating process wherein the system ambient pressure prior to plating material evaporation may be much lower than that required to sustain a glow discharge, however, with vapor pressure of evaporant material added to the environment base pressure being such as to result in a plasma of ionized atoms of the plating material developing as the vaporized material approaches the RF cathode.