Additionally Containing Nickel, Cobalt, Or Iron As Free Metal Or Alloy Patents (Class 427/451)
-
Patent number: 5023109Abstract: Synthetic diamond crystals and films are deposited on a pair of uniformly spaced apart facing plates made of silicon, molybdenum or boron in elemental, nitride or carbide form. The plates are suitably supported within a totally thermally insulated chamber where a pressure of about 10 torr or less is maintained in the form of an atmosphere which includes a carbon source and a major portion of hydrogen, and preferably includes oxygen in equal amount to the carbon. By supplying sufficient microwave power to create a plasma and a uniform temperature of about 950.degree. C. at the plate surfaces, diamond crystals economically grow on the surfaces of the facing plates. Preferably, either the plates or the backing sections thereof have a relatively high thermal conductivity so as to maintain a uniform temperature across the entire plate surface areas.Type: GrantFiled: September 6, 1989Date of Patent: June 11, 1991Assignee: General AtomicsInventors: Jack Chin, Robert R. Goforth, Tihiro Ohkawa
-
Patent number: 5021072Abstract: A process for manufacturing an optical fiber includes the steps of heating and drawing material from a hot optical fiber preform; depositing a conductive coating (especially carbon) on the moving optical fiber; putting a heat curable liquid material on the moving optical fiber; and curing the heat curable liquid material by inductively heating the conductive coating on the moving optical fiber in an electromagnetic field. Heat induced into the conductive coating by energy from the field is conducted from the conductive coating to the heat curable material. The optical fiber continuously moves through the steps of the process without any physical contact.Type: GrantFiled: January 16, 1990Date of Patent: June 4, 1991Assignee: AT&T Bell LaboratoriesInventors: Robert M. Atkins, George E. Peterson, Raymond D. Tuminaro
-
Patent number: 5016565Abstract: A microwave plasma CVD apparatus for forming a functional deposited film comprises a film-forming chamber having a discharge space, a substrate holder, and apparatus for introducing a film-forming raw material gas into the film-forming chamber, for transmitting microwaves into the film-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and for simultaneously applying a bias voltage to the plasma generated in the discharge space from an external system to control the plasma potential. A mechanism is provided for temporarily suspending the application of the bias voltage in the case when abnormal discharge occurs, while monitoring the fluctuation of the bias voltage to be applied to the plasma, to thereby inhibit the occurrence of abnormal discharge.Type: GrantFiled: August 29, 1989Date of Patent: May 21, 1991Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Ryuji Okamura, Hirokazu Otoshi, Koichi Matsuda
-
Patent number: 5017404Abstract: A plasma process and apparatus are provided for coating one or more planar substrates by a plasma-induced chemical vapor deposition in which plasma electrodes provide a plurality of overlapping plasma columns which extend over the entire surface of the substrate to be coated. A plurality of plasma electrodes are fixed in planes above, between, or below the substrates, and the individual plasma electrodes can be separately controlled. With a plasma pulse/CVD process, the spacing and angle between the substrates can be varied to alter the thickness of the coating. The process can be used for coating large area, planar vitreous bodies with multilayer optical coatings.Type: GrantFiled: September 6, 1989Date of Patent: May 21, 1991Assignee: Schott GlaswerkeInventors: Volker Paquet, Ulrich Ackermann, Heniz-W. Etzkorn, Ralf T. Kersten, Uwe Rutze
-
Patent number: 5015494Abstract: A cyclotron resonance chemical vapor deposition method of making a diamond or diamond-like material on a substrate characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is approximately positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.Type: GrantFiled: March 28, 1989Date of Patent: May 14, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Patent number: 5013579Abstract: A cyclotron resonance chemical vapor deposition method for coating mechanical component parts, in which the method is particularly advantageous in coating for parts having substantially flat surfaces and corners which are subject to wear. The method includes disposing the parts in a reaction chamber, inputting a reactive gas into the reaction chamber and exciting the reactive gas in the reaction chamber by applying microwave electromagnetic energy in the presence of a magnetic field. A layer is deposited on the corners and flat surfaces of the parts by chemical vapor reaction such that the layer at the corners is thicker than that on the flat surfaces due to the concentration of the electric field at the corners, thus providing more wear resistance at the corners.Type: GrantFiled: September 26, 1989Date of Patent: May 7, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Patent number: 5002793Abstract: A process for the formation of a deposited functional film by separately introducing, into a film-deposition space (A) for forming a deposited film on a substrate, a precursor as the starting material for forming a deposited film which is formed by applying a microwave energy in to a precursor-generating gaseous raw material a decomposition space (B) and an active species which is formed in a decomposition space (C) and which is chemically reactive with the precursor, respectively and chemically reacting them to thereby form a deposited film on the substrate, wherein the inner wall face of a chamber constituting the film-deposition space (A) and the inner wall face of a chamber constituting the decomposition space (C) are coated with a thin film constituted with an element or ingredient constituting the deposited film having a resistance value of 10.sup.6 .OMEGA..cm or more, thereby preventing intrusion of impurities from inner wall material into the deposited film.Type: GrantFiled: May 31, 1989Date of Patent: March 26, 1991Assignee: Canon Kabushiki KaishaInventor: Takayoshi Arai
-
Patent number: 5002796Abstract: A functional zinc oxide deposited thin film having high light permeability and low resistivity can be obtained at a low temperature of about 200.degree. C. on an inexpensive substrate such as glass by a method of activating a starting material gas by means of activation energy, in a space different from a film-forming space thereby forming a precursor contributing to the formation of a deposited film, activating a starting material gas in a space different from the film-forming space and the space just-mentioned above by means of activation energy thereby forming an active species that chemically reacts with the precursor, and introducing the precursor and the active species into the film-forming space, thereby depositing a film, wherein the starting material gas for forming the precursor is an alkyl zinc compound and the starting material for forming the active species is an oxygen gas or an ozone gas.Type: GrantFiled: May 22, 1989Date of Patent: March 26, 1991Assignee: Canon Kabushiki KaishaInventor: Shoji Nishida
-
Patent number: 5000981Abstract: Fibers are conveniently coated with a uniformly thin and continuous elastomeric coating by contacting the fibers with a (1) a water-dispersed reactive polymer, (2) epoxy resin, and (3) curing agent; and wherein said water-dispersed reactive polymer is a composition comprising. (a) a lower molecular weight reactive polymer, (b) a select solvent, (c) a dispersing agent, and (d) water. The elastomeric films have a Tg value of about 0.degree. C. or below. The elastomer coated fibers are useful as strengtheners and impact modifiers for brittle materials such as epoxy resins.Type: GrantFiled: September 5, 1989Date of Patent: March 19, 1991Assignee: The B. F. Goodrich CompanyInventors: Frederick J. McGarry, Alan R. Siebert, Changkiu K. Riew
-
Patent number: 4996077Abstract: A distributed electron cyclotron resonance remote plasma processing apparatus and method which includes generating electron cyclotron resonance activated species in plasma formation regions distributed peripherally around, remote from the wafer processing chamber and in fluid communication with the main transfer chamber; containing the activated species using a microwave gas discharge and a magnetic field in the plasma formation regions; introducing the plasma streams to the main transfer chamber; creating a magnetic mirror in the main transfer chamber using a magnetic field; and introducing the species to the process chamber and to a face of the workpiece. Such an apparatus could use multiple energy/excitation sources.Type: GrantFiled: October 7, 1988Date of Patent: February 26, 1991Assignee: Texas Instruments IncorporatedInventors: Mehrdad M. Moslehi, Steve S. Huang
-
Patent number: 4992489Abstract: Epoxy resin systems readily available for curing by the application of an induction heat energy source comprising a silica-filled, low viscosity epoxy resin in combination with an iron oxide or a steel powder.Type: GrantFiled: March 1, 1990Date of Patent: February 12, 1991Assignee: Ciba-Geigy CorporationInventors: Rajan Eadara, Robert F. Armbruster
-
Patent number: 4990361Abstract: A method and apparatus for producing a magnetic recording medium having an improved durability with a simple process. Nitrogen molecules and/or nitrogen atoms in an excited state are applied to a nonmagnetic substrate simultaneously with an iron vapor flow and an ion flow. The resulting magnetic recording medium has superior corrosion resistance and can be produced at a high film forming rate, and is especially suitable for high density recording because of its high coercive force.Type: GrantFiled: August 28, 1989Date of Patent: February 5, 1991Assignee: Fuji Photo Film Co., Ltd.Inventors: Tadashi Yasunaga, Akio Yanai, Koji Sasazawa
-
Patent number: 4990365Abstract: To create silicon boronitride layers that are utilized as intermetallization layers and/or as final passivation layers, the present invention provides a method wherein fluid initial compounds that already molecularly contain a part of the target composition of the silicon boronitride layer to be produced are utilized, and deposited through chemical vapor deposition in an alternating electromagnetic field. The silicon boronitride layers produced in this fashion have a dielectric constant whose value is below 4 .epsilon..sub.o and are distinguished by good insulating and blocking properties and by a high break down strength.Type: GrantFiled: June 16, 1989Date of Patent: February 5, 1991Assignee: Siemens AktiengesellschaftInventors: Helmuth Treichel, Oswald Spindler, Bernhard Neureither
-
Patent number: 4973494Abstract: A cyclotron resonance chemical vapor deposition method of making a boron nitride or a boron nitride in combination with carbon on a substrate, characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is substantially positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.Type: GrantFiled: March 29, 1989Date of Patent: November 27, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Patent number: 4971832Abstract: An improved process for forming a functional deposited film by HR-CVD method which comprises disposing an electroconductive substrate or an insulating substrate at least one surface of which being applied with electroconductive treatment on a substrate holder in a substantially enclosed film-forming chamber, introducing a precursor formed in an activation chamber disposed separately from the film-forming chamber which is capable of contributing to the formation of the deposited film and an active species formed in another activation chamber disposed separately from the film-forming chamber and the activation chamber which is capable of chemically reacting with the precursor respectively and separately into said film-forming chamber, and chemically reacting them to thereby form a functional deposited film on the substrate, wherein a voltage in the range of from -5 V to -100 V is applied to the electroconductive substrate or the surface of the insulating substrate applied with the electroconductive treatment.Type: GrantFiled: March 1, 1989Date of Patent: November 20, 1990Assignee: Canon Kabushiki KaishaInventors: Takayoshi Arai, Masahiro Kanai
-
Patent number: 4970093Abstract: A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent.Type: GrantFiled: April 12, 1990Date of Patent: November 13, 1990Assignee: University of Colorado FoundationInventors: Robert E. Sievers, Brian N. Hansen
-
Patent number: 4960611Abstract: A method of remedying a coating characterized by irradiating a minute defect in the coating due to the adhesion of a dust particle, oil droplet or the like with a laser beam having a cross section generally in conformity with the defect to sublime the dust particle, oil droplet or the like and the coating at the defective portion and form a minute cavity in the coating, filling a repair coating composition into the cavity and curing the composition.Type: GrantFiled: September 29, 1988Date of Patent: October 2, 1990Assignee: Kansai Paint Company, LimitedInventors: Atsuhisa Fujisawa, Masuo Ojima, Kenji Wakabayashi, Souji Omoto, Toyokazu Shimizu
-
Patent number: 4957061Abstract: A device for blowing fine particles is provided which comprises a plural number of upstream chambers for jetting out fine particles provided against a movable substrate. Each of the upstream chambers may be provided with a gas exciter, and also may be provided with an energy imparter for imparting energy to the substrate.Type: GrantFiled: December 18, 1989Date of Patent: September 18, 1990Assignee: Canon Kabushiki KaishaInventors: Kenji Ando, Osamu Kamiya, Masao Sugata, Noriko Kurihara, Hiroyuki Sugata, Tohru Den, Toshiaki Kimura, Takashi Hamamoto, Masahiro Haruta, Kuniji Osabe
-
Patent number: 4957774Abstract: A method of heat-fixing a visible image of toner to a recording medium comprises applying a toner image onto the recording medium, whereinthe toner to form said toner image or the resin component of the toner has the properties such that the melt viscosity .eta.' measured by an overhead-type flow tester is from 10.sup.3 to 10.sup.6 poise at a temperature within the temperature range of from 120.degree. C. to 150.degree. C., and the absolute value of the inclination of a graph is not more than 0.50 ln (poise)/.degree.C. when the natural logarithms ln.eta. of the melt viscosities at 120.degree. C. and 150.degree. C. are plotted with respect to the temperatures; and heat-fixing the toner image retained on the recording medium to the recording medium by use of a heater element as stationarily supported and a pressure member that brings said recording medium into close contact with said heater element through a film interposed between them.Type: GrantFiled: December 13, 1989Date of Patent: September 18, 1990Assignee: Canon Kabushiki KaishaInventors: Shinji Doi, Satoshi Yoshida, Satoshi Matsunaga, Hiroaki Kawakami, Takashige Kasuya, Yasuhide Goseki, Yusuke Karami
-
Patent number: 4944244Abstract: It realizes the chemical vapour phase deposition method using a plasma maintained by surface waves in a tube (2) for obtaining a preform and comprises photodetection means (50) sensitive to the light emitted by the deposition area (54) of the vitreous coating resulting from the reaction between appropriate gaseous compounds and able to supply information relative to the emission area of said light, and means (52) for controlling the displacement of the deposition area, displacement being such that the thickness of the coating is uniform in the tube, and control means controlling the power of the microwave generator (30) of the apparatus as a function of the information. Application to the field of telecommunications.Type: GrantFiled: March 14, 1989Date of Patent: July 31, 1990Assignee: Etat Francais Represente Par Le Ministere Des PostesInventors: Monique Moisan, Dominique Pavy, Marie-Eve Davoust, Serge Saada, Patrick Chollet
-
Patent number: 4943345Abstract: An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.Type: GrantFiled: March 23, 1989Date of Patent: July 24, 1990Assignee: Board of Trustees operating Michigan State UniversityInventors: Jes Asmussen, Donnie K. Reinhard
-
Patent number: 4940015Abstract: A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode.Type: GrantFiled: July 13, 1989Date of Patent: July 10, 1990Assignee: Kabushiki Kaisha Kobe Seiko ShoInventors: Koji Kobashi, Kozo Nishimura, Koichi Miyata, Yoshio Kawate, Kazuo Kumagai, Norio Suzuki, Yutaka Kawata, Kiyotaka Ishibashi
-
Patent number: 4937094Abstract: A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.Type: GrantFiled: June 29, 1989Date of Patent: June 26, 1990Assignee: Energy Conversion Devices, Inc.Inventors: Joachim Doehler, Stephen J. Hudgens, Stanford R. Ovshinsky, Buddie Dotter, II, Lester R. Peedin, Jeffrey M. Krisko, Annette Krisko
-
Patent number: 4935303Abstract: A general-purpose novel diamond-like carbon film (DLC film) and its manufacture, and the DLC film is characterized by the following items (i) to (iv); (i) the film structure contains mainly diamond crystalline phases, and has a hydrogen content of 20 atomic %, the presence of diamond crystalline phases is confirmed by analysis by the electron diffraction method, and the diffraction peak appears at 2.theta.=43.9 by analysis by the X-ray diffraction method; (ii) the density is 1.8 g/cm.sup.3 or over; (iii) the film surface is smooth and excellent in etching resistance; and (iv) the film is chemically stable and structurally stable, and these stabilities are not deteriorated under high temperature conditions.Type: GrantFiled: October 14, 1988Date of Patent: June 19, 1990Assignee: Canon Kabushiki KaishaInventors: Keiko Ikoma, Noriko Kurihara, Keiji Hirabayashi, Yasushi Taniguchi, Kenji Ando, Susumu Ito
-
Patent number: 4926791Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.Type: GrantFiled: April 26, 1988Date of Patent: May 22, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inujima, Toru Takayama
-
Patent number: 4925701Abstract: A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 0.4 micron; heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the chamber, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.Type: GrantFiled: May 27, 1988Date of Patent: May 15, 1990Assignee: Xerox CorporationInventors: Frank Jansen, Mary A. Machonkin
-
Patent number: 4925542Abstract: A plasma type metal plating apparatus is characterized by a magnetically confined electrical plasma containing a high percentage of metal ions directed toward the target substrate, containing the passages with passage walls to be plated, and means for increasing the longitudinal velocity of the moving ions of the plasma in the region of the substrate prior to incidence of those ions on the substrate. The method of plating minute diameter high aspect ratio holes in microelectronic integrated circuit substrates employs steps of directing an electrical plasma containing a high percentage of metal ions, suitably 80% or greater, toward the microelectronic substrate; and adding energy to the plasma in the vicinity of said substrate to increase longitudal movement velocity of the ions prior to incidence of said ions on said substrate.Type: GrantFiled: December 8, 1988Date of Patent: May 15, 1990Assignee: TRW Inc.Inventor: Philip W. Kidd
-
Patent number: 4921725Abstract: A process for continuously coating a strand of continuous carbon filaments by means of a refractory carbide by reactive technique which includes the step of causing the strand to travel under mechanical tension with a hermetic enclosure, simultaneously, introducing into the said enclosure a carbon free gas mixture consisting of hydrogen and of a volatile compound of an element capable of forming a refractory carbide; and heating the reaction mixture consisting of the strand and the gas mixture under controlled conditions so that the formation of the carbide deposit on the filaments takes place by a chemical reaction between the carbon in the filaments and the gas mixture. Under these controlled conditions, the reaction is self-regulated to produce a thin homogenous passivation coating on each filament.Type: GrantFiled: April 17, 1989Date of Patent: May 1, 1990Assignee: Centre National de la Recherche Scientifique (CNRS)Inventors: Jean Bouix, Jean C. Viala, Henri Vincent, Christiane Vincent, Jean L. Ponthenier, Jacques Dazord
-
Patent number: 4919077Abstract: A semiconductor producing apparatus for use in photochemical vapor deposition for forming various types of film on a substrate at a low temperature as a first reaction gas excited and decomposed by a laser beam and a second reaction gas converted into a plasma state by a plasma generator react with each other in a reaction chamber in which a substrate is mounted. Two kinds of electrodes are provided in upper and lower positions in the reaction chamber opposing each other. The upper electrode is connected to a high-frequency power source and the lower electrode is used as a common electrode on which the substrate is mounted to control film forming speed, while an ultraviolet light source for irradiating the interior of the reaction chamber with ultraviolet rays is provided to obtain a dense film.Type: GrantFiled: August 23, 1988Date of Patent: April 24, 1990Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Masao Oda, Toshiyuki Kobayashi, Yoshimi Kinoshita
-
Patent number: 4911948Abstract: A novel hot-melt and other viscous fluid and coating screen-printing method and apparatus in which a line of fluid is extruded against a predetermined region of a rotary screen opposite which a web is drawn to transfer the fluid extruded at said region through the screen pores, with large cross-section fluid extrusion sealed against the inner wall of the screen as the same rotates past said region, and with features of fluid pressure and screen heating synchronous and proportional to line speed, inerted inner screen cavity construction (and possible exterior inerting of the screen, and novel web drawing roller positioning, including web-movement rotation of the screen, and all accommodating high viscosty fluids and high web speeds.Type: GrantFiled: September 7, 1988Date of Patent: March 27, 1990Assignee: Acumeter Laboratories, Inc.Inventor: Frederic S. McIntyre
-
Patent number: 4910041Abstract: A process of forming a film on a substrate, which comprises bringing a substrate into contact with a plasma zone formed by generating, by use of a discharge electrode or discharge electrodes, high temperature or quasi-high temperature plasma of a gas containing at least one carbon containing compound,wherein said electrode comprises a sheet-like electrode provided with a slit having a linear portion and connected to a microwave electric source; orwherein said plasma zone is formed by forcing a high temperature or quasi-high temperature plasma generated in an arc between said electrodes by DC discharge, to move by applying a magnetic field. The process enables formation of films on substrate surfaces in a high energy efficiency.Type: GrantFiled: September 9, 1988Date of Patent: March 20, 1990Assignee: Japan Synthetic Rubber Co., Ltd.Inventors: Kenji Yanagihara, Mituo Kimura, Hitoshi Chawanya, Koshi Numata
-
Patent number: 4904497Abstract: The present invention relates to an electromagnetic system for applying a coating to a metal or metal alloy substrate. The system utilizes a high frequency electromagnetic field to maintain a supply of coating material in a molten condition, to restrict the flow of the molten coating material, and to control the thickness of the applied coating layer. Downstream cooling solidifies the coating layer. The system has particular utility in forming tin coated copper or copper base alloy products.Type: GrantFiled: January 4, 1988Date of Patent: February 27, 1990Assignee: Olin CorporationInventor: Brian G. Lewis
-
Patent number: 4902870Abstract: An RF plasma gun has a metal annular support ring at the gun's nozzle exit port. The ring is conductively mounted to a metal tank containing a substrate to be processed. The substrate is connected to a manipulator which is electrically isolated from the tank. A DC voltage is impressed between the tank, which contains an inert atmosphere at a pressure below that of ambient atmosphere, and the manipulator. The tank is placed at ground potential and the manipulator at a negative potential relative to the tank. The DC voltage creates an electric arc which flows from the exit port ring via the plasma to the substrate for cleaning the substrate.Type: GrantFiled: March 31, 1989Date of Patent: February 20, 1990Assignee: General Electric CompanyInventors: Gerhard Frind, Paul A. Siemers, Stephen F. Rutkowski
-
Patent number: 4900387Abstract: Adhesives and coating are formulated with electrorheological materials to thicken when subjected to an electric field. The adhesives are thin and easy to apply, but thicken to prevent running while the adhesive cures or sets. A uniform bond along the joint is formed, thereby eliminating the uneven or discontinuous adhesive bonds made with conventional adhesives that reduce the strength and integrity of the joint.Type: GrantFiled: February 24, 1988Date of Patent: February 13, 1990Assignee: The Boeing CompanyInventor: Joseph C. Johnson
-
Patent number: 4897281Abstract: According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant.Type: GrantFiled: May 25, 1988Date of Patent: January 30, 1990Assignee: Canon Kabushiki KaishaInventors: Takayoshi Arai, Shigehira Iida, Keishi Saitoh, Junichiro Hashizume, Tetsuya Takei
-
Patent number: 4897286Abstract: A process for producing a product of carbon fiber reinforced thermoplastic resin comprising immersing carbon fibers in a suspension of a powder of a thermoplastic resin in a liquid medium, which contains at least 20 wt % of an organic liquid and which contains from 0 to 80 wt % water, to impregnate the thermoplastic resin among carbon fibers, and heating the thermoplastic resin deposited on the fibers to melt and form a unitary assembly with carbon fibers.Type: GrantFiled: December 29, 1988Date of Patent: January 30, 1990Assignee: Toho Rayon Co., Ltd.Inventors: Hiroyuki Kosuda, Yasuhisa Nagata, Yoshihiro Endoh
-
Patent number: 4897284Abstract: An improvement in the known MW-PCVD process for forming a deposited film on each of a plurality of cylindrical substrates being so arranged as to surround the discharging space in a substantially enclosed reaction space of a deposition chamber by the glow discharge of raw material gas to generate plasmas containing reactive gaseous materials causing the formation of said deposited film in the discharging space while rotating said plurality of substrates, which comprises providing a gas feed pipe provided with a plurality of gas liberation holes opening into the discharging space in every space between every two of the substrates so as to form an encircled discharging space and an open non-discharging space by said plurality of cylindrical substrates and a plurality of gas feed pipes and regulating the deposit thickness to be deposited per a rotation cycle of the substrate passing through the discharging space and the non-discharging space to a 1000 .ANG. or less.Type: GrantFiled: March 10, 1988Date of Patent: January 30, 1990Assignee: Canon Kabushiki KaishaInventors: Takayoshi Arai, Shigehira Iida, Junichiro Hashizume, Tetsuya Takei, Keishi Saitoh
-
Patent number: 4895736Abstract: A method particularly adapted for alloying a coating on a steel strip. The invention uses an induction heating furnace to produce a galvannealed product. In particular, the operating frequency to the heating coils of the furnace is modulated to avoid a resonant vibration in the steel strip through the heating zone of the furnace. Preferably the invention comprises imposing a frequency modulation on the operating frequency of the power signal to the heating coils.Type: GrantFiled: February 24, 1989Date of Patent: January 23, 1990Assignee: Ajax Magnethermic Corp.Inventors: Richard A. Sommer, George Havas, Mario Tama
-
Patent number: 4893584Abstract: Microwave energy apparatus adapted to sustain a substantially uniform plasma over a relatively large area. In the broadest form of the invention, an isolating window is disposed about the microwave applicator, said isolating window formed from a material through which the microwave energy can be transmitted from the applicator into a plasma reaction vessel and said isolating window configured in a shape which is substantially optimized to withstand compressive forces. In this manner, the thickness of the isolating window may be minimized to provide for rapid thermal cooling, wherby high power densities may be achieved without cracking the window.Type: GrantFiled: March 29, 1988Date of Patent: January 16, 1990Assignee: Energy Conversion Devices, Inc.Inventors: Joachim Doehler, Jeffrey M. Krisko
-
Patent number: 4891239Abstract: A method and apparatus for ultrafast microwave tissue fixation using a single mode resonant waveguide constructed with an aperture near one end. The waveguide is also constructed to provide a uniform E field and maximum power field below the aperture. Tissue is placed into a vial filled with fixation solution. The vial and tissue are then inserted through the aperture into the waveguide. Microwave energy is then applied to the tissue which becomes fixated within a short period of time.Type: GrantFiled: April 13, 1989Date of Patent: January 2, 1990Assignee: Raytheon CompanyInventors: Kenneth W. Dudley, Wesley W. Teich, John S. Sklenak
-
Patent number: 4877641Abstract: A plasma CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of:(a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed;(b) maintaining the temperature of said zone and said substrate from about 100.degree. C. to about 350.degree. C.;(c) maintaining the pressure in said zone from about 0.1 to about 5 Torr; and(d) passing said gas mixture into contact with said substrate while exciting said gas mixture with a plasma for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film on said substrate, wherein said plasma is excited by a RF power at about 10 to 500 Watts.Type: GrantFiled: May 31, 1988Date of Patent: October 31, 1989Assignee: Olin CorporationInventor: Thomas S. Dory
-
Patent number: 4877642Abstract: Layers of electrically conductive material are deposited in a standing microwave field. The deposition is done on an electrically conductive substrate in which a part of the surface forms a part of the inner wall of a microwave cavity resonator. As a result of this the microwave energy is used optimally. Measures are taken to keep the coupling place of the microwave ("window") free from an electrically conductive growth. The substrate is preferably moved periodically or aperiodically relative to the plasma and the remaining walls of the resonator.Type: GrantFiled: July 2, 1987Date of Patent: October 31, 1989Assignee: U.S. Philips Corp.Inventors: Georg F. Gartner, Hans-Jurgen Lydtin
-
Patent number: 4876114Abstract: A process for the evaporation deposition of a layer of metal on a workpiece is described in which a charge of a metal is placed in a crucible formed of a material having a vapor pressure lower than the vapor pressure of the metal at a selected temperature, a shield is placed between the workpiece and the crucible, and the crucible is then heated to a first temperature sufficient to melt said charge, but insufficient to cause substantial evaporation of said charge following which the crucible is heated to a second temperature level for a time sufficient to fractionally distill the charge and sublime or vaporize any non-metallic contaminants in said charge and finally the crucible is heated to a third temperature sufficient to evaporate the charge at a selected rate at which time the shield is removed from between the cricuble and the workpiece to permit evaporant from the charge to coat the workpiece.Type: GrantFiled: August 29, 1988Date of Patent: October 24, 1989Assignee: International Business Machines CorporationInventors: Richard R. Phinney, David C. Strippe
-
Patent number: 4873119Abstract: The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and (b) controlling the temperature of the activator and the flow rate and temperature of the semiconductane gas so that it does not completely decompose upon the activator.Type: GrantFiled: January 28, 1987Date of Patent: October 10, 1989Assignee: Chronar Corp.Inventors: Masud Akhtar, Herbert A. Weakliem
-
Patent number: 4869923Abstract: A method of making a diamond or diamond-like carbon containing 0.01-1.0 weight percent nitrogen on a substrate where an electromagnetic energy is applied to a productive gas comprising carbon and an additive gas comprising nitrogen and the above carbon product is deposited on a substrate.Type: GrantFiled: February 24, 1988Date of Patent: September 26, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Patent number: 4869924Abstract: This invention provides a method for synthesis of diamond by contacting a substrate with a mixed gas of carbon source gas and hydrogen gas activated by irradiation with microwave to produce plasma, thereby to deposit diamond on the surface of the substrate wherein microwave is introduced from a plurality of directions to the substrate and an apparatus for synthesis of diamond which comprises at least one microwave oscillator which oscillates microwave, a plurality of waveguides for introducing from a plurality of directions the microwave oscillated from said microwave oscillator to a substrate for deposition of diamond, and a reaction chamber which is connected to said waveguides and in which diamond is deposited by generation of plasma thereby to form a diamond thin film on the surface of said substrate.Type: GrantFiled: August 31, 1988Date of Patent: September 26, 1989Assignee: Idemitsu Petrochemical Company limitedInventor: Toshimichi Ito
-
Patent number: 4859493Abstract: An apparatus and method for applying hard surface coatings to articles of manufacture such as particles, filaments, sphereoids, rollers, bearings, tools, and assemblies. In one form, coating of hard surface film, such as synthetic diamond, is effected while the objects fall freely through space in a coating chamber. In another form, coating is effected while particles are fluidized by gas containing molecules which are formed of matter to be deposited by gas or chemical vapor deposition employing high energy radiation, such as microwave energy and/or other form of radiation. In other forms, an ion beam or beams containing hot carbon ions is directed through a fluidized bed of particles to be coated or through a chamber in which small objects are made to continuously fall freely through space to coat same with carbon in the form of synthetic diamond.Type: GrantFiled: March 31, 1987Date of Patent: August 22, 1989Inventor: Jerome H. Lemelson
-
Patent number: 4853251Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.Type: GrantFiled: February 20, 1986Date of Patent: August 1, 1989Assignee: Canon Kabushiki KaishaInventors: Shunichi Ishihara, Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu
-
Patent number: 4849598Abstract: A coating layer such as a paint coating, a sealer, or the like on an electrically conductive workpiece such as an automotive body is baked or dried by holding an induction coil or induction coils closely to the workpiece, supplying an electric current to the induction coil or coils to induce eddy currents in the workpiece to heat the workpiece with the eddy current, and applying a gas such as air to the surface of the coating layer to bake or dry the same.Type: GrantFiled: March 30, 1988Date of Patent: July 18, 1989Assignee: Honda Giken Kogyo Kabushiki KaishaInventors: Hiroyoshi Nozaki, Uhee Kikuchi
-
Patent number: RE33251Abstract: Methods are disclosed for the sealing of gelatin capsules having hard shell coaxial cap and body parts which overlap when telescopically joined. Also described are apparatus and sealing fluids to seal the capsules.Type: GrantFiled: March 2, 1987Date of Patent: July 3, 1990Assignee: Warner-Lambert CompanyInventors: Fritz Wittwer, Ivan Tomka