Abstract: The present invention fabricates a hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas. The modified fabric has a rough surface and a fluorocarbon functional group having the lowest surface free energy. The fabric has a grafted fluorocarbon monomer layer to enhance the graft efficiency of the fluorocarbon functional groups and its wash fastness. The atmospheric plasmas can be mass produced and less expensively. Hence, the present invention can rapidly modify surfaces of polymeric materials with low cost and good environment protection.

Abstract: We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

Abstract: An insulating-film-forming composition includes: a hydrolysis-condensation product obtained by hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (A) in the presence of a polycarbosilane (B) and a basic catalyst (C); and an organic solvent.

Abstract: A composition having a polythiol reactant and an alkenyl silane reactant which are combined to form a polysulfide polysilane. In the process, the reactants are combined in a thiol-ene addition process driven by UV radiation. The polysulfide polysilane is then hydrolyzed and may be combined with other hydrolyzed compounds. For coatings, the polysulfide polysilane is hydrolyzed and may optionally be combined with nanoparticles. For bulk materials, the polysulfide polysilane is hydrolyzed, concentrated and heated to form a high refractive index material which can be used to form lenses.

Abstract: The purpose of the invention is a process for obtaining a material comprising a substrate at least part of whose surface and at least one of whose faces is based on organic compounds, the said process being implemented at atmospheric pressure comprises moreover the following stages. In the immediate vicinity of the said substrate a zone containing active species of a non-thermal plasma is created; into the said zone is injected at least one precursor of a chemical element so as to deposit upon at least one face of the said substrate (at least part of whose surface comprises an organic compound base), a first thin layer capable of protecting the said substrate against oxidation reactions, specifically those due to radicals. A further purpose of the invention is the material obtainable according to this process.

Abstract: There are provided a gas barrier laminated film, which is transparent while possessing excellent gas barrier properties and, at the same time, has excellent impact resistance, and a process for producing the same. The gas barrier laminated film comprises a base material, a vapor deposited film of an inorganic oxide provided on the base material, and a gas barrier coating film provided on the vapor deposited film. The gas barrier laminated film is characterized in that the base material on its side where the vapor deposited film is provided, has been subjected to pretreatment or primer coating treatment, and the gas barrier coating film has been formed by coating a gas barrier coating liquid onto the inorganic oxide film and then heating the coating.

Abstract: A process for improving the barrier performance of a plasma coated object comprising a polyolefin is disclosed. The process involves ensuring that the surface of the object to be coated is smooth as characterized by having a root-mean-square surface roughness that varies by less than the thickness of the coating to be applied, typically less than 100 nm. The invention also relates to a process for improving the stain resistance of polyolefin based articles comprising plasma polymerizing an organosilicon compound under conditions to deposit a polyorganosiloxane layer onto the article and/or (b) plasma polymerizing a organosilicon compound under conditions to deposit a silicon oxide layer directly on the article or onto a polyorganosiloxane layer prepared according to step (a).

Abstract: A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.

Abstract: Provided is a technology capable of improving the reliability of a semiconductor device using a SiOC film as an interlayer film. In the invention, by forming an interlayer film from a SiOC film having a Si—CH3 bond/Si—O bond ratio less than 2.50% or having a strength ratio determined by the FT-IR of a Si—OH bond to a SiO—O bond exceeding 0.0007, a strength ratio of a SiH bond to a SiO—O bond at a wavelength of 2230 cm?1 exceeding 0.0050 and a strength ratio of a Si—H bond to a SiO—O bond at a wavelength of 2170 cm?1 exceeding 0.0067, the interlayer film has a relative dielectric constant of to 3 or less, and owing to suppression of lowering in hardness or elastic modulus, has improved mechanical strength.

Abstract: A nozzle plate includes: a nozzle for discharging a liquid as droplets; a liquid-repellent film suppressing attachment of the droplets on one surface of the nozzle plate; and a first bonding film formed on the other surface of the nozzle plate and bonded with a substrate. In the nozzle plate, the liquid-repellent film includes a first plasma polymerized film having a Si skeleton, which includes a siloxane (Si—O) bond and has a random atomic structure, and an elimination group bonded with the Si skeleton. Further, the elimination group existing around a surface of the first plasma polymerized film is eliminated from the Si skeleton by applying energy to a region of at least a part of the first plasma polymerized film so as to generate reactivity, on the region of the first plasma polymerized film, with a coupling agent having liquid repellency with respect to the droplets, and the first plasma polymerized film is bonded with the coupling agent by the reactivity so as to form the liquid-repellent film.

Abstract: A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at ?50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.

Abstract: A nozzle plate, comprising: a nozzle discharging a liquid as droplets; a liquid-repellent film preventing attachment of the liquid on one surface of the nozzle plate; and a first bonding film formed on the other surface of the nozzle plate and bonded with a substrate. In the nozzle plate, the liquid-repellant film and the first bonding film are plasma polymerized films having a Si skeleton, the Si skeleton including a siloxane (Si—O) bond and having a random atomic structure, and an alkyl group bonded with the Si skeleton. Further, the alkyl group existing around a surface of the first bonding film is eliminated from the Si skeleton by an application of energy, which is applied to a region of at least a part of the first bonding film, so as to develop adhesiveness with respect to the substrate in the region of the surface of the first bonding film.

Abstract: A method for coating a fuel cell component is provided. The method includes the steps of providing a fuel cell component, and forming a coating on a surface of the fuel cell component with a plasma jet. The step of forming the coating may include applying a coating precursor to a surface of the fuel cell component and then reacting the coating precursor with the plasma jet to form the coating. The step of forming the coating may also include growing the coating on the surface of the fuel cell component by delivering the plasma jet containing the coating precursor.

Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: The present invention relates to a method of manufacturing a low-k thin film and the low-k thin film manufactured therefrom. More specifically, the method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes subjecting thin film, which is formed by plasma polymerization, to post-heat treatment using an RTA device, and low-k thin film manufactured therefrom. A method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes: evaporating a precursor solution including decamethylcyclopentasiloxane and cyclohexane in a bubbler; inflowing the evaporated precursor from the bubbler to a plasma deposition reactor; depositing a plasma-polymerized thin film on a substrate in the reactor by using a plasma in the reactor; and post-heat-treating by an RTA device.

Abstract: Radiation curable coatings and methods of utilizing the coatings are provided. In a general embodiment, the present disclosure provides a coating composition containing about 15% to about 80% by weight of one or more radiation curable compounds such as polycarbonate acrylate oligomers, polyurethane acrylate oligomer, polyester acrylate oligomers, silicone-based acrylate oligomers, or a combination thereof, and about 10% to about 80% by weight of one or more acrylate monomers.

Abstract: A method produces a coating including a conjugated polymer on a substrate. The method includes the steps of: —providing a substrate, —introducing a conjugated polymer coating forming material into an atmospheric pressure plasma discharge, or into the reactive gas stream resulting therefrom, —simultaneously with the introduction of a coating forming material, introducing an additional material into the plasma discharge or the reactive gas stream resulting therefrom, —exposing the substrate to the plasma discharge or the reactive gas stream resulting therefrom, thereby obtaining the coating.

Abstract: A process for plasma coating a surface in which an atomized surface treatment agent is incorporated in a non-equilibrium atmospheric pressure plasma generated in a noble process gas and the surface to be treated is placed in contact with the atmospheric pressure plasma containing the atomized surface treatment agent, characterized in that particle content of the coating formed on the surface is reduced by incorporating a minor proportion of nitrogen in the process gas.

Abstract: Disclosed is a low dielectric constant plasma polymerized thin film using linear organic/inorganic precursors and a method of manufacturing the low dielectric constant plasma polymerized thin film through plasma enhanced chemical vapor deposition and annealing using an RTA apparatus. The low dielectric constant plasma polymerized thin film is effective for the preparation of multilayered metal thin films having a thin film structure with very high thermal stability, a low dielectric constant, and superior mechanical properties.

Abstract: A first aspect of the present invention provides for devices to facilitate the release of sample materials from sample acquisition devices. The device comprises an abrasion element comprising at least one constriction or projection. A second aspect of the present invention provides for methods in which to use the devices to facilitate the release of sample materials from a sample acquisition device. Optionally, the device may contain at least one reagent to facilitate the release and/or detection of a microorganism, or component thereof, in a sample. Preferably, the devices and methods may be used in conjunction with a liquid medium in which the sample may be further processed.

Abstract: Disclosed is a structure made of a trench patterned substrate having a pre-determined trench period and a pre-determined mesa to trench width ratio, and a block copolymer on top of the trench patterned substrate. The block copolymer has at least an organic block and a silicon-containing block, wherein the block copolymer can have either perpendicular or parallel cylinders. The structure is annealed under a pre-determined vapor pressure for a predetermined annealing time period, wherein the pre-determined trench period, the pre-determined mesa to trench width ratio, the predetermined vapor pressure and the predetermined annealing time period are chosen such that cylinders formed in the block copolymer are either perpendicular or parallel with respect to the trench-patterned substrate. A method is also described to form the above-mentioned structure.

Abstract: A process for preparing a coating on an object by plasma polymerizing a first compound under conditions to deposit a layer onto the object, the object comprising a nanocomposite polymer. In addition, the object so coated.

Abstract: An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.

Abstract: The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

Abstract: A process for preparing an adherent coating on an object (as well as the coated object) by first plasma polymerizing a first organosilicon compound under conditions to deposit a polyorganosiloxane layer onto the object; and/or then plasma polymerizing a second organosilicon compound under conditions to deposit a silicon oxide layer on the polyorganosiloxane layer or directly on the object, the object comprising a polymer composition comprising (i) from 99 to 50 weight percent of a polymer having more than 90 weight percent monomer units containing three carbons and optionally monomer units selected from the group consisting of alpha olefins containing two carbons and/or from four to twelve carbons, and (ii) from 1 to 50 weight percent of a second copolymer comprising monomer units selected from the group consisting of alpha olefins containing two carbons and alpha olefins containing from four to twelve carbons and optionally up to 10 weight percent of a diene monomer containing less than thirteen carbons; or

Abstract: A non-planar article includes a plasma deposited abrasion resistant coating with a substantially uniform thickness and a substantially uniform abrasion resistance with delta haze (%) in the range between about +/?0.25 of the mean value.

Abstract: A process for depositing a layer of a plasma polymerized organosiloxane, siloxane or silicon oxide onto the surface of an organic polymeric substrate by atmospheric pressure glow discharge deposition from a gaseous mixture comprising a silicon containing compound and an oxidant, characterized in that the oxidant comprises N2O.

Abstract: A method of forming a protective film that restrains gas adsorption while preserving durability and corrosion resistance of a plasma CVD carbon film is disclosed. A protective film of a slide-resistant member is deposited by means of a plasma CVD method using a raw material of hydrocarbon gas, wherein a bias voltage higher than ?500 V is applied to the slide-resistant member in an initial stage of depositing the protective film, and a bias voltage of ?500 V or lower is applied in a final stage of deposition. A proportion of time duration of the final stage is preferably at most 25% of the total time for depositing the protective film. A magnetic recording medium comprising a magnetic recording layer and a protective film formed by the method also is disclosed.

Abstract: A reflective article useful, for example, in automotive headlights includes a substrate, a reflective metal layer, and a haze-prevention layer between the substrate and the reflective metal layer. The substrate includes an amorphous thermoplastic resin having a heat distortion temperature of at least about 140° C., a density less than 1.7 grams per milliliter, and an organic volatiles content less than 1,000 parts per million measured according to ASTM D4526. The haze-prevention layer includes a material having a volume resistivity of at least 1×10?4 ohm-centimeters and a tensile modulus of at least about 3×105 pounds per square inch. The article resists hazing of the reflective layer at elevated temperatures.

Abstract: Suture filaments coated by a plasma polymerization process exhibit a good balance of knot run down and knot security characteristics, superior tissue drag characteristics, and improved fray resistance.

Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation.

Abstract: A gradient coating is comprised of a basecoat derived from a polysiloxane prepolymer obtained from a mixture of one to three alkoxysilane monomers and at least one diepoxide monomer, and a lubricious reactant. The basecoat is applied to a substrate and dried. The lubricious reactant is then applied and allowed to permeate into the basecoat. The basecoat and lubricious reactant are then co-cured, resulting in a gradient coating composition. In addition to providing enhanced scratch and mar resistance, the gradient coating composition is solvent resistant and provides a durable hydrophobic and oleophobic surface, which makes it useful as a corrosion protectant and as a release agent.

Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.

Abstract: The present invention provides a method for the formation of an organic coating on a substrate. The method includes: providing a substrate in a vacuum; providing at least one vaporized organic material comprising at least one component from at least one source, wherein the vaporized organic material is capable of condensing in a vacuum of less than about 130 Pa; providing a plasma from at least one source other than the source of the vaporized organic material; directing the vaporized organic material and the plasma toward the substrate; and causing the vaporized organic material to condense and polymerize on the substrate in the presence of the plasma to form an organic coating.

Abstract: An article is described comprising a substrate and a plasma polymer coating comprising silicon, oxygen and carbon bonded to the surface of the substrate, in respect of which coating the following applies in the case of determination by means of ESCA: the mole ratio O: Si is >1.25 and <2.6 and the mole ratio C: Si is >0.6 and <2.2, according to a preferred embodiment the coating contains at least 22 and at most 27 atomic percent Si, at least 25 and at most 50 atomic percent O and at least 25 and at most 50 atomic percent C based on its total atomic number without hydrogen and/or fluorine.

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Abstract: An article of a plastic substrate and a bond layer of a plasma polymerized cyclosiloxane having select unsaturation and a method of forming same.

Abstract: A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Abstract: Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.

Abstract: An optical element, such as a waveguide, is formed by utilizing a plasma deposited precursor optical material wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a precursor optical material that can be selectively photo-oxidized by exposure to electromagnetic energy in the presence of oxygen to produce photo-oxidized regions that have a selectively lower index of refraction than that of the non-photo-oxidized regions whereby transmission of a light signal through selected non-photo-oxidized and photo-oxidized regions can be controlled. Subsequent photo-oxidation or variable photo-oxidation can be used to produce various discrete regions with different indexes of refraction for fabrication, optimization or repair of photonic structures.

Abstract: The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

Abstract: A method of producing a permanent demoulding layer by plasma polymerisation on the surface of a mould, in which a gradient layer structure is created in the demoulding layer by varying the polymerisation conditions over time.

Abstract: A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Abstract: The present invention relates to a substrate for attachment of biomolecules. The substrate is coated with a multiamino organosilane. If desired, the substrate can be further modified prior to coating with a multiamino organosilane. Optional surface modifications include coating the substrate with SiO2 or leaching with acid to form a SiO2 rich layer. DNA, nucleic acids, or any bimolecules can be attached to the coated substrates of the invention. Although a variety of substrates are contemplated, the preferred substrate is a low self-fluorescent glass.

Abstract: Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material.

Abstract: A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.

Abstract: The application discloses methods of plasma treatment that employ an ion sheath in a capacitively-coupled system to increase the hydrophilicity of porous articles, including microporous articles having pore sizes of 0.05 to 1.5 micrometers, both on their surfaces and in their pores such that the articles' bulk wetting properties are improved.

Abstract: An epoxy resin composition suitable for forming a film of excellent water repellency which comprises an epoxy resin having one or more water repellent groups and two or more cyclic aliphatic epoxy groups per molecule, a triazine-base catalyst for cationic polymerization and a non-polar solvent.