Abstract: A capacitor is formed utilizing a plasma deposited capacitor dielectric wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a capacitor dielectric that can exhibit a low dielectric constant and, in selected depositions, a response to photo-oxidation induced by exposure to radiated electromagnetic energy in the presence of oxygen. Photo-oxidation of selected depositions can be used to alter the dielectric constant of the capacitor dielectric after the capacitor has been fabricated. The capacitor may be used in precision filter applications.

Abstract: A process for creating plasma polymerized deposition on a substrate by a corona discharge is described. The corona discharge is created between an electrode and a counterelectrode supporting a substrate. A mixture of a balance gas and a working gas is flowed rapidly through the electrode, plasma polymerized by corona discharge, and deposited onto the substrate as an optically clear coating or to create surface modification. The process, which is preferably carried out at or near atmospheric pressure, can be designed to create an optically clear powder-free or virtually powder free deposit of polymerized plasma that provides a substrate with properties such as surface modification, chemical resistance, and barrier to gases.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: The invention provides a method for single-step surface modification, grafting and sterilization for bio-active coating on materials and biomaterials used in medical devices, such as catheters, tissue engineering scaffolds, or drug delivery carrier materials. This may include any medical device or implantable that could benefit from improved antithrombogenic and biocompatible surfaces. Other relevant device examples may include heparin or urokinase coated stents to reduce clotting and restenosis, dental or ophthamological implants. These materials may be comprised of a variety of polymeric compositions such as, polyurethane, polyester, polytetrafluoroethylene, polyethylene, polymethylmethacrylate, polyHEMA, polyvinyl alcohol, polysiloxanes, polylactic or glycolic acids, polycaprolactone, etc. The substrates can also be metal, ceramics or biologically derived materials.

Abstract: Disclosed is a film provided with a hardcoat which has high surface hardness and improved apparent scratch resistance. This film provided with a hardcoat comprises: a transparent substrate film; and, stacked on the transparent substrate film in the following order, a hardcoat and a slip layer. The hardcoat is formed of a cured product of a material comprising an ultraviolet-curable resin and a photopolymerization initiator which initiates the photopolymerization of the ultraviolet-curable resin upon exposure to ultraviolet light in its wavelength region other than the wavelength region absorbable by the transparent substrate film. The slip layer contains a slip agent.

Abstract: A method for improving the coating capability of low dielectric layer is disclosed. The method includes steps of an etching stop layer is deposited a semiconductor substrate, an adhesion promoter layer is spun-on the etching stop layer. The pre-wetting process being performed on the adhesion promoter layer to enhance the coating capability of the low-k dielectric layer, and thus improve the coating quality through the pre-wetting process of baked adhesion promoter layer before the low-k dielectric layer is applied.

Abstract: A process of forming a resist image in a microelectronic substrate comprises the steps of contacting the substrate with a composition first comprising carbon dioxide and a component selected from the group consisting of at least one polymeric precursor, at least one monomer, at least one polymeric material, and mixtures thereof to deposit the component on the substrate and form a coating thereon; then imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed; then subjecting the coating to a second composition comprising carbon dioxide having such that either one of the exposed or the unexposed coating portions are removed from the substrate and the other coating portion is developed and remains on the coating to form an image thereon.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the plasma to deposit a first layer on the article; injecting a second material comprising an organometallic material into the plasma to form a second layer on the first layer; and injecting a third material comprising a silicon containing organic compound into the plasma to deposit a third layer on the second layer. The invention also relates to an article of manufacture comprising a substrate; an interlayer disposed on the substrate; a second layer disposed on the interlayer, the second layer comprising an inorganic ultraviolet absorbing material; and a third layer disposed on the second layer, the third layer comprising an abrasion resistant material.

Abstract: Methods, coatings and coated medical devices are provided, wherein a plasma-deposited aliphatic polymerized hydrocyclosiloxane membrane is deposited as a diffusion control barrier for a drug deliver component consisting of one or more therapeutic agents coated on a surface or contained within a matrix, preferably a polymeric matrix, coated on a surface. The plasma-polymerized hydrocyclosiloxane membrane coats all or substantially all of the drug delivery component in contact or communication with the exterior surface, such that all or substantially all of any drug or therapeutic agent must diffuse across the membrane in order to be released.

Abstract: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

Abstract: This invention relates to radiation curable compositions comprising an alkenyl ether functional polyisobutylene, a cationic photoinitiator, and a miscible reactive diluent selected from specified organic vinyl ether compounds, epoxy functional compounds, or compounds having the formula R8Xb, wherein R8 is a non-silicon containing organic group, X is an organic group containing at-least one acrylate functional group, and b has a value of 1-3. The radiation curable compositions exhibit a low cure energy, have a high moisture vapor barrier, high damping characteristics, and a high refractive index, and provide a barrier to corrosive vapors and have maintained or enhanced modulus, tensile strength, and toughness.

Abstract: This invention relates to radiation curable compositions comprising an alkenyl ether functional polyisobutylene, a cationic photoinitiator, and a miscible reactive diluent selected from specified organic vinyl ether compounds or compounds having the formula R8Xb, wherein R8 is a non-silicon containing organic group, X is an organic group containing at-least one acrylate functional group, and b has a value of 1-3. The radiation curable compositions exhibit a low cure energy, have a high moisture vapor barrier, high damping characteristics, and a high refractive index, and provide a barrier to corrosive vapors and have maintained or enhanced modulus, tensile strength, and toughness.

Abstract: A plastic window panel for an automotive vehicle comprises a plastic panel of a transparent noncrystalline organic high polymer. Silica particulate is dispersed in the plastic panel and has a particle size not larger than wavelengths of visible light. The plastic window panel is produced by one of a first method and a second method. The first method comprises (a) providing a first solvent in which the silica particulate having the particle size not larger than wavelengths of visible light is dispersed, and a second solvent in which the transparent noncrystalline organic high polymer is dissolved; (b) mixing the first solvent and the second solvent to obtain a resin composition; and (c) molding the resin composition under heating.

Abstract: Coating an implantable device, such as micro electromechanical devices, is highly desirable to protect the implantable device from corrosion. A coating method includes depositing, preferably by plasma glow discharge, a reactant monomer on at least one surface of an implantable device, preferably at ambient temperature. The method will likely decrease the manufacturing time required for assembling such devices because completely assembled devices can be coated.

Abstract: Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 &mgr;m ICs, or when copper is used as conductor in future ICs.

Abstract: A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR2O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

Abstract: A semiconductor substrate etching masking layer onto which the pattern to be etched can be transferred by photolithography at extreme ultraviolet light wavelengths from 10 to 100 nm and which is resistant to plasma etching. An ultraviolet light semiconductor integrated circuit photolithography process and the use for fabricating a double masking layer for semiconductor substrate etching of a photo-ablation layer sensitive to extreme ultraviolet light and resistant to deep ultraviolet light and/or ultraviolet light coupled to a polymer resin layer resistant to extreme ultraviolet light and to plasma etching when the resin has been developed and sensitive to deep ultraviolet light and/or to ultraviolet light.

Abstract: To provide the filler which is added to a composition for a sealing member, etc. for sealing of semi-conductor production equipment being apt to be damaged greatly by mixing of a foreign matter and is small in a change in weight in either of the oxygen plasma irradiation and CF4 plasma irradiation, and the crosslinkable elastomer composition. The filler is used for the crosslinkable elastomer and has an imide structure, and a change in weight of the filler is not more than 4 mg/cm2·hr in either of the oxygen plasma irradiation and CF4 plasma irradiation. The crosslinkable elastomer composition comprises the filler and the crosslinkable elastomer such as a fluorine-containing elastomer.

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula:

Abstract: A method of modifying a polymeric surface of a substrate including: (iii) providing the polymeric surface with functional groups; and (iv) contacting the surface with (a) a polyamine compound reactive with the surface functional groups said polyamine comprising at least four amine groups including at least two amine groups selected from primary and secondary amine groups and (b) a crosslinking agent reactive with the polyamine; to provide a crosslinked network grafted to the substrate surface.

Abstract: A method of modifying surfaces of a device, for example, a medical device, is disclosed. The method includes modifying a surface of a device by providing a device, exposing the device to a reactive gas and plasma energy to create a plasma deposited surface on the device, and quenching the device with the reactive gas. The device exhibits changes in its surface properties thereby making it more desirable for an intended use.

Abstract: A method for applying wear protection layers including the steps of depositing a wear protection matrix with the aid of a PECVD method, and incorporating optically functional inclusions in the form of particles or intermediate layers with the aid of a PVD process. The chemistry of the inclusion is influenced by the process gas of the PECVD deposition and/or the matrix layer. In an example embodiment of the present invention, the optical functionality consists in UV protection of plastics by dispersion, absorption, or reflection of the UV component of the light.

Abstract: A method for fabricating silicone elastomer stamps with hydrophilic surfaces is provided. The concept of polymer grafting is used to produce the stamps. The stamps thus produced have the great advantage that grafting of a thin hydrophilic polymer on a hydrophobic PDMS surface can render PDMS stamps permanently hydrophilic. With such stamps it becomes possible to print aqueous or highly polar inks reproducibly over days and weeks.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Abstract: A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.

Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds.

Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.

Abstract: An insulator with a molding made of ceramic and a hydrophobic coating applied to the surface of the molding is disclosed, the hydrophobic coating comprising a plasma polymer having been applied directly to the ceramic. The previously customary glaze on the surface of the ceramic is replaced by the plasma polymer. Such an insulator has high long-term stability with regard to its electrical insulating capability. It is possible to dispense with complicated shaping of the molding to increase the leakage path over the surface of the ceramic and with the application of a glaze, which means a considerable cost saving.

Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 &mgr;m or smaller) features.

Abstract: A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

Abstract: The invention relates to a metal substrate with a corrosion-resistant coating produced by means of plasma polymerization, wherein the substrate is subjected to mechanical, chemical and/or electrochemical smoothing in a pre-treatment step and is subsequently exposed to a plasma at a temperature of less than 200° C. and at a pressure of 10−5 bis 100 mbars, whereby in a first step the surface is activated in a reducing plasma and in a second step the polymer is separated from a plasma containing at least one hydrocarbon or silico-organic compound which can be vaporized in plasma conditions, optionally contains oxygen, nitrogen or sulphur and can contain fluorine.

Abstract: The present invention relates to an electrically conductive coating that is producible by hydrolytic condensation of a mixture comprising at least one silicon compound of the general formula SiXnR(4−n) (I), wherein at least one of the groups R is a mercapto-substituted alkyl or aryl group; and a compound of the general formula ZaSiYbR(a−4−b) (II), wherein the group Z is a quaternary ammonium salt, for example. Said coating is particularly suitable for toner transfer drums, and exhibits high scratch resistance and good adhesion to the substrate.

Abstract: An electrical insulator is produced by coating a molded part of the insulator with a hydrophobic plasma-polymer coating. The plasma-polymer coating is produced by igniting a plasma in a non-polar working gas or a working gas having non-polar groups at a working pressure of between 0.001 Pa (1·10−5 mbar) and 50 Pa (5·10−1 mbar). The electrical power input per chamber volume lies between 0.5 and 5 kW/m3, the gas flow per chamber volume lies between 10 and 1000 sccm/m3. A durable, hard and hydrophobic plasma-polymer coating is created, the quality of which is independent of the material of the molded part.

Abstract: Elastomeric seals, including O-rings, may have chemically resistant thin films applied by the technique of plasma polymerization to the surface of the elastomer, enhancing wear resistance and environmental resistance without changing the physical properties of the elastomer. The films may be a silane polymer applied by plasma deposition in a radio frequency/microwave dual power source reactor.

Abstract: In a method for the coating of substrates made of plastic, with a light-reflecting layer, preferably an aluminum layer, and another layer placed between the substrate and the light-reflecting layer, the additional layer, which has a high barrier effect to substances which migrate or evolve gases from the plastic, is a highly crosslinked hydrocarbon layer, a silicon dioxide, silicon nitride, or silicon oxynitride layer, with a thickness of at least 15 nm, wherein the carbon content of the barrier layer is <15%.

Abstract: A method of exposing a composite organic/inorganic master to alkylchlorosilanes in the vapor phase. Chlorosilanes participate in facile reactions with hydroxyl groups existing on the surface of inorganic oxides (such as glass or the native oxides on silicon, aluminum, tin, etc.); or those in organics-containing phenolic or alcoholic groups, such as photoresists. The alkyl group on the silane can be chosen from a large selection of aliphatic or aromatic organic groups that have substituents with varying polarity and reactivity.

Abstract: A low dielectric constant, multiphase material which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a multiphase low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of the multiphase low dielectric constant materials that are prepared by the method are further disclosed.

Abstract: A method of forming an organosilicate layer for use in integrated circuit fabrication processes is provided. The organosilicate layer may be formed by reacting a gas mixture comprising a silicon source, a carbon source, and an oxygen source in the presence of an electric field. After the organosilicate layer is formed, it is treated with a plasma comprising one or more inert gases. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as a bulk insulating material in a dual damascene structure.

Abstract: This invention relates to a process for the preparation of UV protective coatings by plasma-enhanced vacuum deposition, using hydroxyphenyl-s-triazines as UV absorbers. This invention also relates to the use of hydroxyphenyl-s-triazines in plasma-enhanced vacuum depositions and to the substrates coated by this process.

Abstract: A coating liquid for forming a silica-containing film with a low-dielectric constant, which enables the formation of a low-density film having a dielectric constant as low as 3 or less and being excellent not only in resistance of oxygen plasma and in process adaptation but also in adhesion to a substrate and in film strength, is provided. A substrate coated with the silica-containing film having the above characteristics, which is obtained by the use of the above coating liquid, is further provided.

Abstract: The present invention relates to a method of and a device for optimizing at least one coating material at at least one point of a substrate surface to which the coating material is applied. The method, which is carried out with the corresponding device, comprises at least the following steps: a) applying said at least one coating material to said at least one point of the substrate surface, b) curing said at least one coating material at said at least one point of the substrate surface, and c) determining the state, especially the curing and/or yellowing and/or gloss, of said coating material at said at least one point of the substrate surface, possessed by said coating material as a consequence of steps a) and b).

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A process for producing antiadhesive layers on a web-form material, characterized in that the antiadhesive layers are applied to the web-form material by means of low pressure plasma polymerization by guiding the web-form material continuously through a plasma zone containing a low pressure plasma.

Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than about 100%, and more typically greater than about 200%. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than about 450° C.

Abstract: There is disclosed a gas barrier film having, as a base film, a polypropylene film, which makes it possible to take advantage of the excellent gas barrier property inherent to an SiOx thin film formed on the polypropylene film, and which is free from chlorine which would give a bad influence to the environment. This gas barrier film comprises a polypropylene film whose surface is bonded with tuning molecular chains having, as a main skeleton, an —O—Si—O— structure by enabling the oxygen (—O—) thereof to be bonded to carbon atoms of the surface of the polypropylene film, and an SiOx thin film formed on the surface of the polypropylene film where the tuning molecular chains are bonded, the SiOx thin film being bonded to the tuning molecular chains interposed between the polypropylene film and the SiOx thin film.

Abstract: A process for making a two-component plasma-deposited photo-oxidizable organosilicon film on a substrate from a silicon donor and an organic precursor. Subjecting selected areas of the film to photo-oxidation allows selective etching of the non-photo-oxidized or photo-oxidized areas of the film. The process is used as a resist for patterning substrates in the fabrication of solid-state devices. It is of particular use in patterning heat sensitive substrates and accomplishing microlithography in a closed chamber process at other than atmospheric pressure. The process allows photo-oxidation with ultraviolet light at wavelengths closer to visible light than that for conventional photoresists. The processed film exhibits selective wetting properties between the non-photo-oxidized and photo-oxidized areas of the film.

Abstract: A semiconductor substrate etching masking layer onto which the pattern to be etched can be transferred by photolithography at extreme ultraviolet light wavelengths from 10 to 100 nm and which is resistant to plasma etching. An ultraviolet light semiconductor integrated circuit photolithography process and the use for fabricating a double masking layer for semiconductor substrate etching of a photo-ablation layer sensitive to extreme ultraviolet light and resistant to deep ultraviolet light and/or ultraviolet light coupled to a polymer resin layer resistant to extreme ultraviolet light and to plasma etching when the resin has been developed and sensitive to deep ultraviolet light and/or to ultraviolet light.