Abstract: A manufacturing method of a wire grid polarizer is provided, including: setting pattern data, where the pattern data correspond to a wire grid structure of the wire grid polarizer; preparing a metal ion solution; immersing at least one surface of a carrier substrate in the metal ion solution; and emitting, by an emitter device, an electron beam to the carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the carrier substrate at a position where the electron beam passes, to form the wire grid structure.

Abstract: An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device. In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.

Abstract: A method is described for coating a substrate to provide a controlled in-plane compositional modulation, in which first and second targets are activated, with one of the targets being activated by a series of activation pulses to release particles by pulsed evaporation, sublimation, or sputtering that impinge onto the substrate for coating thereof, while the other one of the targets is substantially passive.

Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.

Abstract: A fully compostable container is provided having an enclosed body with an opening through an interior surface and an exterior surface. The enclosed body having a plant fiber structural layer configured to biodegrade in ambient conditions into nontoxic residue and a fluid barrier layer formed on a first side of the structural layer to form the interior surface of the enclosed body, the fluid barrier layer configured to biodegrade in ambient conditions into nontoxic residue. The container is gradually biodegradable when exposed to a set of factors in a natural environment and has a shelf life of six months when stored under standard commercial conditions.

Abstract: A method of introducing dopants into a semiconductor wafer includes implanting the dopants into a region below a surface of the semiconductor wafer using an ion beam to form a first implanted layer. The dopants when activated causing a conductivity of the implanted layer to be either of N-type or P-type. The first implanted layer is characterized by a peak dopant concentration at a first depth below the surface of the semiconductor wafer. The method also includes removing a layer from the semiconductor wafer surface, wherein said layer includes a portion of said dopants.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by spray forming.

Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm?1, a film density in a range of 2.5 to 2.7 g/cm3, and a distance between grains of 30 nm or shorter.

Abstract: The invention relates to a method for the plasma treatment of glass surfaces, the metal component, in particular the alkali and/or alkaline-earth metal component in the superficial region of the substrate being reduced by a plasma treatment of a substrate.

Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.

Abstract: A method of introducing an impurity into a wafer surface is provided. The method comprises the steps of: low energy implantation of impurity into a surface of the wafer to generate an implanted dopant layer; and simultaneously removing an implanted surface of the implanted dopant layer to generate a doping profile with controlled areal impurity dosage.

Abstract: Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.

Abstract: According to one embodiment, a method for manufacturing a master disk for discoid patterned medium having a plurality of sectors arranged in a circumferential direction, the plurality of sectors including a recording data portion and a servo data portion that includes a sector identification region having gaps formed in a linear pattern is provided. An imprint master disk having a linear pattern which is common to the sectors before the gaps are formed in the sector identification region and including at least one pattern of the sector is prepared, imprinting is repeated in the circumferential direction by using the imprint master disk to form patterns of a discoid patterned medium on a substrate, and a sector identification pattern is formed in each sector by forming gaps in the linear pattern of each sector identification region among the patterns formed on the substrate.

Abstract: A method and apparatus for depositing and removing nanoscale conductors. A magneto-optical trap ion source (MOTIS) creates a beam of focused metal ions that either deposit directly at low energy (<0.5 keV) or sputter material away at high energy (>2 keV). By scanning the beam, layers of material may be built up into a desired pattern. By employing a MOTIS as the source of ions for the beam, and then directing that beam through an appropriate ion-optical column, isotopically pure samples may be deposited into patterns with nanoscale feature sizes. The ability to quickly remove material, and deposit isotopically pure metals is desirable, for instance, during the circuit edit stage of integrated circuit manufacture.

Abstract: A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.

Abstract: Methods for removing hydrogen from molecules are disclosed. In one embodiment, hydrogen-containing molecules are deposited on a solid substrate and are bombarded with hydrogen projectile particles. The particles may have energies of 5-100 eV, or more preferably 10-50 eV. The hydrogen projectile particles remove hydrogen atoms from the deposited molecules while they are on the substrate, without removing other atoms from the molecules. Dangling bonds are created by the loss of hydrogen and can be used to cross-link the molecules. The resulting product can be a nanometer-thick dense film.

Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.

Abstract: A hole in a sample from which a sample piece has been extracted with a focused ion beam is filled at high speed using ion beam gas assisted deposition. A method of filling the hole by using the ion beam includes a step of irradiating the hole formed in a face of the sample with the ion beam to thereby form an ion beam gas-assisted deposition layer in the hole. The ion beam gas-assisted deposition layer is formed in the hole while controlling the area to which the ion beam is irradiated so as to cause the ion beam to fall on a part of a side wall of the hole and to not fall on another part of the side wall in an area scanned with the ion beam. The filled hole may then be covered with a protective film.

Abstract: A method of controlling the drug release rate of a drug coated endovascular stent by depositing a drug material layer on the stent and then modifying the drug material using gas cluster ion beam irradiation to create a carbon matrix with interstices containing the original drug. The rate at which the drug elutes through the interstices can be controlled by processing parameters. Multiple layers may be employed to create time varying release rates.

Abstract: A method and system for coating the internal surfaces of a localized area or section of a workpiece is presented. Conductive structures are inserted into one or more openings of a workpiece to define the section to be coated. In some embodiments, a bias voltage is connected to a workpiece section, which functions as a cathode. A gas source and vacuum source are coupled to each conductive structure through a flow control system. The flow control system enables a first opening to function as a gas inlet and a second opening to function as a vacuum exhaust. Only the section encompassed by the conductive structures is coated. When the coating process is completed, a means for varying the conductive structures along the length is utilized to move onto the next section to be coated.

Abstract: A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

Abstract: A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. Ion beam treatment is performed on a layer(s) of the coating. For example, an overcoat layer (e.g., of silicon nitride) of a low-E coating may be ion beam treated in a manner so as to cause the ion beam treated layer to include (a) nitrogen-doped Si3N4, and/or (b) nitrogen graded silicon nitride. It has been found that this permits durability of the coated article to be improved.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A method is provided for making a coated article including an anti-etch layer(s) that is resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluoride-based etchant(s). In certain example embodiments, the anti-etch layer(s) is formed using at least one ion beam (possibly in combination with at least one sputtering target). In certain embodiments, a diamond-like carbon (DLC) inclusive layer(s) may be provided over and/or under the anti-etch layer.

Abstract: A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructured surface such that the physical structures previously produced are neither masked nor are the dimensions of the physical structures substantially altered. In an additional embodiment, a thicker coating can be grown from the thin conformal coating which itself can be nanostructured as it is deposited. In this case adhesion of the thicker coating is not dependent upon the use of conventional surface pretreatments such as machining, chemical etching, or abrasive blasting. Surface texturing may be performed by ion beam sputtering, and ion assisted coating forms the thin conformal coating, and thicker coating if desired. The treatment process is useful for improving the mechanical, catalytic, chemical, or biological activity of the surfaces so treated.

Abstract: A slide member according to the present invention includes: a substrate of at least one element selected from a group made up of V, Cr, Fe, Co, Ni, Zr, Nb, Mo, Ta, W, Ir and Pt; a gradient layer containing chromium and carbon formed on the substrate; and a hard carbon coating layer formed on the gradient layer, in which the graded layer has a component conformation comprising a gradually decreasing chromium concentration and gradually increasing carbon concentration from the substrate side to the hard carbon coating layer side, and the hard carbon coating layer contains aluminum.

Abstract: A method for making a wear-resistant electrically conductive body having an electrically conductive diamond-like carbon coating, by ion-accelerating copper ions from a copper ion source onto a negatively charged electrically conductive body, and simultaneously ion-accelerating diamond-like carbon ions from a separate carbon ion source onto the negatively charged electrically conductive body. Also a dual ion-beam process for depositing a wear-resistant diamond-like carbon coating on a negatively charged electrically conductive surface by using an ion-beam to stabilize ionized carbon atoms that have been ion-accelerated onto the negatively charged electrically conductive surface.

Abstract: The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum source is connected at an exit opening. Pressure within the workpiece is monitored and the resulting pressure information is used for maintaining a condition that exhibits the hollow cathode effect. Optionally, a pre-cleaning may be provided by introducing a hydrocarbon mixture and applying a negative bias to the workpiece, so as to sputter contaminants from the workpiece using argon gas. Argon gas may also be introduced during the coating processing to re-sputter the coating, thereby improving uniformity along the length of the workpiece. The coating may be a diamond-like carbon material having properties which are determined by controlling ion bombardment energy.

Abstract: A method of forming a tunneling magnetoresistive head begins by forming a tunneling magnetoresistive stack having a tunnel barrier. An air bearing surface is formed of the tunneling magnetoresistive stack. The air bearing surface is ion etched causing a deficiency of a constituent in a portion of the tunnel barrier adjacent the air bearing surface. The deficiency of the constituent is replenished in the portion of the tunnel barrier adjacent the air bearing surface to restore the electrical properties of the tunnel barrier.

Abstract: A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

Abstract: This invention relates to a method of making a window (e.g., vehicle windshield, architectural window, etc.), and the resulting window product. At least one glass substrate of the window is ion beam treated and/or milled prior to application of a coating (e.g., sputter coated coating) over the treated/milled substrate surface and/or prior to heat treatment. As a result, defects in the resulting window and/or haze may be reduced. The ion beam used in certain embodiments may be diffused. In certain embodiments, the ion beam treating and/or milling is carried out using a fluorine (F) inclusive gas(es) and/or argon/oxygen gas(es) at the ion source(s). In certain optional embodiments, F may be subimplanted into to treated/milled glass surface for the purpose of reducing Na migration to the glass surface during heat treatment or thereafter, thereby enabling corrosion and/or stains to be reduced for long periods of time.

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.

Abstract: A method for preparing a noble metal surface on an industrial substrate for interaction with an organic material. The method includes covering the substrate with a sequence of metal layers which may include one or more adhesion layers, one or more diffusion barriers, and ends with a noble metal layer. In an optional second step, the noble metal layer may be annealed in order to stabilize its crystal structure. Finally, the noble metal layer is subjected to one or more ion bombardment steps, which are effective to clean and precisely smooth the top surface of the noble metal layer.

Abstract: A method of depositing a film on a substrate disposed in a substrate processing chamber. In one embodiment the method includes depositing a first portion of the film to at partially fill a gap formed between to adjacent features formed on the substrate. The first portion of film is deposited using a high density plasma formed from a first gaseous mixture flown into the process chamber. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step and a subsequent chemical etch step. The physical etch step sputter etches the first portion of film by forming a plasma from a sputtering agent introduced into the processing chamber and biasing the plasma towards the substrate. After the physical etching step, the film is chemically etched by forming a plasma from a reactive etchant gas introduced into the processing chamber.

Abstract: A method of reducing stress induced defects in a substrate according to an HDP-CVD process including providing a substrate for depositing a layer of material according to an HDP-CVD process; igniting a plasma for carrying out an HDP-CVD process; adjusting plasma operating parameters to achieve a first deposition-sputter ratio with respect to the substrate; depositing a first portion of the layer of material according to a first range of substrate temperatures; and, depositing at least a second portion of the layer of material according to at least a second range of substrate temperatures.

Abstract: An onion-like carbon thin film is provided which contains carbon as a main component, has a film thickness of at least 20 nm or more, and has clusters of an onion-like structure. Specifically, there is provided the onion-like carbon thin film satisfying the foregoing requirements, and in which (1) at least 20 or more clusters each having a diameter of 4 nm or more, and having an onion-like structure are contained per 0.001 &mgr;m2; or (2) the proportion of clusters each having an onion-like structure in a matrix is at least 50% by volume or more. The onion-like carbon thin film of the present invention is very useful in terms of availability in various industrial fields as a hard protective film or a solid lubricating film of the surface in various machine parts, electronic parts, and the like, or as a field electron emission material, or the like, an electronic part of a field emission display, or the like.

Abstract: A personal ornament having a white coating layer comprises a base article made of a metal, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the base article. Another personal ornament having a white coating layer comprises a base article made of a nonferrous metal, an underlying plating layer formed on the surface of the base article, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the underlying plating layer.

Abstract: A method of influencing variations in composition of thin films is described. The elemental plasma field distribution in sputtering systems is manipulated by generating a nonuniform electric field along a surface of the substrate to alter the composition by differentially re-sputtering the target elements. The nonuniform electric field is applied by one or more electrodes in contact with a conductive surface or by using an RF bias signal. The nonuniform electric field is used to modulate the kinetic energy of the ions generated in the plasma which strike the thin film's surface. Since the kinetic energy and the mass of the sputtering gas ions and neutrals affect the re-sputtering rate, the nonuniform electric field differentially affects the elements being deposited according to mass. By applying varying electric potentials at a plurality of points on a conductive surface of a substrate, the electric field across the surface of the substrate can be modulated in a variety of patterns.

Abstract: A method of smoothing a surface of a diamond coating of a diamond-coated body, by using an arc-type ion plating device in which at least one target is disposed. The method includes: (a) a step of causing arc discharge between an anode, and a cathode which is provided by each of the above-described at least one target, whereby positive ions are emitted from the above-described at least one target; and (b) a step of applying a negative bias voltage to the diamond-coated body which is disposed in the arc-type ion plating device, whereby the surface of the diamond coating is bombarded with the positive Lions, so as to be smoothed by the bombardment of the positive ions against the surface of the diamond coating.

Abstract: A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.

Abstract: Functionally enhanced shrink-wrap materials having protective coatings composed of mixtures of a water-compatibilized, modified polyolefin resins (Component A) and a mixture of a water-compatibilized acrylic resin (Component B) and a water-compatibilized polyurethane resin (Component C) wherein said mixture contains from approximately 100% to 50% by weight Component B and from approximately 50% to 0% by weight of Component C are provided. Moreover, methods and materials are disclosed for providing protective shrink-wrap covering with enhanced, long-term durability and improved resistance to chemical contamination, biological agents, radiation, pollutants, physical stress and structural deformation among other environmental factors are also disclosed.

Abstract: Liquid crystalline polymers (LCP) may be sputter-coated or ion-plated with palladium to yield palladium coated LCP parts. These may be electrolytically plated, as with copper, using normal or unusually high current densities, to make metal plated LCP in which the metal has good adhesion to the LCPs. Before or after the electrolytic plating, the metal coating may be patterned. Parts containing patterned metal surface may be used as circuit boards or printed wire boards.

Abstract: A process for coating super fine ion particles of multiple elements on the surface of a micro route substrate includes a coating step operated under low temperatures and vacuums. First, raw micro routers are cleaned by electron beams under atmospheric pressures and room temperatures, then the raw micro routers are transferred into a vacuum environment, and the temperature of the environment is increased to a range between 120° C. to 180° C. Next, the surface of the micro route is cleaned by ions, and then a coating process is started. An arc source is used to bombard cations from a target while a filtration net is used to pass small cation particles. An ion assistant device is operated to further refine the filtered particles so that only super fine ion particles are coated on the surface of the micro route substrates.

Abstract: A method for scrubbing and passivating an anode plate (100) of a field emission display (120) includes the steps of providing a scrubbing passivation material (127); imparting to scrubbing passivation material (127) an energy selected to cause removal of a contamination layer (123, 117) from anode plate (100); causing scrubbing passivation material (127) to be received by contamination layer (123, 117), thereby removing contamination layer (123, 117); and depositing at least a portion of scrubbing passivation material (127) on anode plate (100), thereby forming a passivation layer (129).

Abstract: A method and apparatus to facilitate the successful and precise smoothing of conductive films on insulating films or substrates. The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons, harmful charging of the films and damage to the films are avoided.

Abstract: A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.

Abstract: A method of coating a substrate includes the step of forming a chrome layer on the substrate by using a magnetron sputtering device, and the step of forming a chrome nitride layer on the chrome layer by using an arc type ion plating device while maintaining the temperature of the substrate between 100 and 200° C. A vane used for a vane-type compressor, which is subjected to a surface treatment according to the coating method of the present invention is also provided.

Abstract: A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Abstract: A method of smoothing a surface of a diamond coating of a diamond-coated body, by using an arc-type ion plating device in which at least one target is disposed. The method includes: (a) a step of causing arc discharge between an anode, and a cathode which is provided by each of the above-described at least one target, whereby positive ions are emitted from the above-described at least one target; and (b) a step of applying a negative bias voltage to the diamond-coated body which is disposed in the arc-type ion plating device, whereby the surface of the diamond coating is bombarded with the positive ions, so as to be smoothed by the bombardment of the positive ions against the surface of the diamond coating.