Ion Plating Or Implantation Patents (Class 427/523)
  • Patent number: 11043394
    Abstract: A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: June 22, 2021
    Assignee: Applied Materials, Inc.
    Inventor: John Hautala
  • Patent number: 10991585
    Abstract: A method of trimming the refractive index of material forming at least part of one or more structures integrated in one or more pre-fabricated devices, the method comprising: implanting one or more first regions of material of one or more pre-fabricated devices, encompassing at least partially one or more device structures, with ions to alter the crystal form of the material within the one or more first regions and change the refractive index of the material within the one or more first regions; and heat treating one or more second regions of material of the one or more devices, encompassing at least partially the one or more first regions, to alter the crystal form of the material within the one or more first regions encompassed by the one or more second regions and change the refractive index thereof, thereby trimming the refractive index of the material of at least part of the one or more device structures, such that the one or more device structures provide one or more predetermined device outputs.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: April 27, 2021
    Assignee: University of Southampton
    Inventors: David John Thomson, Graham Trevor Reed, Robert Topley
  • Patent number: 10722908
    Abstract: A bell cup (3) of a rotary atomization-type coating device (1) is provided. This device has a rotary shaft (13) and a feed tube (15) inserted in the rotary shaft. The bell cup is fitted to a tip end part of the rotary shaft and has a coating material spreading surface (31) on an inner surface of the bell cup. The feed tube discharges a coating material to the coating material spreading surface. The coating material spreading surface includes a region extending from a predetermined position on a proximal end side to a distal end edge. The region is constituted of a convex curved surface toward an extension of the rotary shaft. The outermost surface of at least part (31B) of the coating material spreading surface is covered by a diamond-like carbon film (50) free from silicon at least on its outermost surface.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: July 28, 2020
    Assignee: NISSAN MOTOR CO., LTD.
    Inventors: Shigenori Kazama, Takeshi Goto, Takamitsu Ono, Masaaki Iwaya
  • Patent number: 10682725
    Abstract: Example implementations relate to techniques for refining the microstructure of metallic materials used for additive manufacturing. An example can involve generating a first layer of an integral object using a material with grains structured in a first arrangement. After a threshold duration occurs since generating the first layer, the example can involve applying an external force to the first layer to cause deformations in the first arrangement of grains. The example can further involve generating a second layer coupled to the first layer of the integral object to form a portion of the integral object. Generating the second layer of the integral object causes the material of the first layer to recrystallize new grains to replace grains proximate the deformations. The grains that result from recrystallization are structured in new arrangement that improves the physical and mechanical properties of the layer and subsequent layers collective.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: June 16, 2020
    Assignee: The Boeing Company
    Inventors: Arash Ghabchi, Christopher A. Meyer, James D. Cotton, Matthew J. Crill
  • Patent number: 10618810
    Abstract: Disclosed is a free atom nanotube growth technology capable of continuously growing long, high quality nanotubes. This patent application is a Continuation In Part of the Trekking Atom Nanotube Growth patent application #14037034 filed on Sep. 25, 2013. The current invention represents a departure from chemical vapor deposition technology as the atomic feedstock does not originate in the gaseous environment surrounding the nanotubes. The technology mitigates the problems that cease carbon nanotube growth in chemical vapor deposition growth techniques: 1) The accumulation of material on the surface of the catalyst particles, suspected to be primarily amorphous carbon, 2) The effect of Ostwald ripening that reduces the size of smaller catalyst particles and enlarges larger catalyst particles, 3) The effect of some catalyst materials diffusing into the substrate used to grow carbon nanotubes and ceasing growth when the catalyst particle becomes too small.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: April 14, 2020
    Assignee: Odysseus Technologies, Inc.
    Inventor: Bryan Edward Laubscher
  • Patent number: 10438966
    Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: October 8, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Tomonari Shioda, Junya Fujita, Tatsuro Nishimoto, Yoshiaki Fukuzumi, Atsushi Fukumoto, Hajime Nagano
  • Patent number: 10381231
    Abstract: Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: August 13, 2019
    Assignee: Veeco Instruments Inc.
    Inventors: Timothy Pratt, Katrina Rook
  • Patent number: 10288771
    Abstract: A substrate deposition system includes a system frame; a plurality of processing tanks carried by the system frame, the plurality of processing tanks adapted to contain liquid coating materials of different light refractive indexes; at least one actuator disposed in proximity to the plurality of processing tanks, the at least one actuator adapted to sequentially immerse at least one substrate in the liquid coating materials and transfer the at least one substrate between the plurality of processing tanks; and at least one coating system located in a process flow downstream direction from the plurality of processing tanks, the at least one coating system adapted to apply an antireflective coating to the at least one substrate. A lens surface location measuring system is also disclosed.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: May 14, 2019
    Assignee: QUANTUM INNOVATIONS, INC.
    Inventors: Norman L. Kester, Cliff J. Leidecker
  • Patent number: 10134941
    Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: November 20, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Mann Yi, Jeongkyu Kim, Jinsung Kim
  • Patent number: 10090133
    Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: October 2, 2018
    Assignee: PRAXAIR TECHNOLOGY, INC.
    Inventors: Ashwini K Sinha, Stanley M Smith, Douglas C Heiderman, Serge M Campeau
  • Patent number: 10004133
    Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: June 19, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shurong Liang, Costel Biloiu, Glen F. R. Gilchrist, Vikram Singh, Christopher Campbell, Richard Hertel, Alexander Kontos, Piero Sferlazzo, Tsung-Liang Chen
  • Patent number: 9997337
    Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 12, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Masahito Mori, Naoyuki Kofuji, Naoshi Itabashi
  • Patent number: 9711329
    Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: July 18, 2017
    Assignee: Axelis Technologies, Inc.
    Inventors: Bo H. Vanderberg, Andy M. Ray
  • Patent number: 9570271
    Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: February 14, 2017
    Assignee: PRAXAIR TECHNOLOGY, INC.
    Inventors: Ashwini K. Sinha, Stanley M. Smith, Douglas C. Heiderman, Serge M. Campeau
  • Patent number: 9562285
    Abstract: A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: February 7, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keisuke Suzuki, Hiroki Murakami, Shingo Hishiya, Kentaro Kadonaga, Minoru Obata
  • Patent number: 9548181
    Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: January 17, 2017
    Assignee: PRAXAIR TECHNOLOGY, INC.
    Inventors: Ashwini K. Sinha, Stanley M. Smith, Douglas C. Heiderman, Serge M. Campeau
  • Patent number: 9515287
    Abstract: An organic light-emitting display apparatus includes a substrate, a display unit, an encapsulation layer, and a protection layer. The display unit is formed on the substrate. The encapsulation layer covers the display unit. The protection layer is formed on the encapsulation layer. The encapsulation layer is formed of a low temperature viscosity transition (LVT) inorganic material. The protection layer is formed of an elastic, adhesive material to protect the encapsulation layer from an external force.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: December 6, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Sun Lee, Ung-Soo Lee, Sang-Young Park
  • Patent number: 9455147
    Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: September 27, 2016
    Assignee: ENTEGRIS, INC.
    Inventors: W. Karl Olander, Jose I. Arno, Robert Kaim
  • Patent number: 9365920
    Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: June 14, 2016
    Assignee: SHINCRON CO., LTD.
    Inventors: Ichiro Shiono, Ekishu Nagae, Yousong Jiang, Takuya Sugawara
  • Patent number: 9274470
    Abstract: A fixing apparatus includes a first member that is heated by a heat source and is rotatable; a second member that is rotatable, the second member forming a nip portion capable of sandwiching a recording material between the first member and the second member; and a pressure member that is disposed inside the first member, has a surface coming into contact with an inner surface of the first member, and pressurizes the first member against the second member, in which the pressure member has a surface layer forming the surface of the pressure member coming into contact with the inner surface of the first member, and the surface layer includes a diamond-like carbon film having an sp3 bond ratio of 40% or more and 90% or less.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: March 1, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshinori Nakayama
  • Patent number: 9076881
    Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: July 7, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun-Hyeok Im, Jong-Yeon Kim, Tae-Je Cho, Un-Byoung Kang
  • Publication number: 20150147481
    Abstract: A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films. The sensor stack is then ion milled to define the sensor side edges. The side regions are then refilled by deposition of an insulating layer. Next, the lower soft magnetic layers of the exchange-coupled side shields are deposited, which also coats the insulating layer up to and past the side edges of the upper free layer. The soft magnetic material adjacent the side edges of the upper free layer is removed by oblique angle ion beam milling. The material for the antiparallel-coupling (APC) layers is deposited, followed by deposition of the material for the upper soft magnetic layers of the exchange-coupled side shields.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 28, 2015
    Applicant: HGST Nertherlands B..V.
    Inventors: Patrick Mesquita Braganca, Jordan Asher Katine, Neil Smith
  • Publication number: 20150132539
    Abstract: A coated device comprising a body, a coating on at least a portion of a surface of the body, wherein the coating comprises, a terminal layer, and at least one underlayer positioned between the terminal layer and the body, the underlayer comprising a hardness of greater than 61 HRc, wherein prior to the addition of the terminal layer, at least one of the body and the underlayer is polished to a surface roughness of less than or equal to 1.0 micrometer Ra.
    Type: Application
    Filed: August 28, 2014
    Publication date: May 14, 2015
    Inventors: Jeffrey R. Bailey, Srinivasan Rajagopalan, Mehmet Deniz Ertas, Adnan Ozekcin, Bo Zhao
  • Publication number: 20150118410
    Abstract: A deposition device that deposits material particles includes an ionization section that ionizes the material particles utilizing a photoelectric effect in a reaction chamber to which the material particles are supplied, and an electrode section that guides the ionized material particles to a given area utilizing a Coulomb force.
    Type: Application
    Filed: May 21, 2013
    Publication date: April 30, 2015
    Inventor: Hirofumi Nakano
  • Publication number: 20150118521
    Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 30, 2015
    Inventors: Charanjit Singh Bhatia, Koashal Kishor Mani Pandey, Nikita Gaur, Siegfried L. Maurer, Ronald W. Nunes
  • Patent number: 9012874
    Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: April 21, 2015
    Assignee: Entegris, Inc.
    Inventors: Robert Kaim, Joseph D. Sweeney, Anthony M. Avila, Richard S. Ray
  • Patent number: 9006690
    Abstract: A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: April 14, 2015
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Jincheng Zhang
  • Patent number: 8975603
    Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: March 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Shu Qin, Allen McTeer
  • Patent number: 8974867
    Abstract: A method for making a strip shaped graphene layer includes the following steps. First, a carbon nanotube structure on a surface of a metal substrate is provided. The carbon nanotube structure includes at least one drawn carbon nanotube film. The at least one drawn carbon nanotube film includes a number of carbon nanotube segments, each of the number of carbon nanotube segments being substantially parallel to each other and separated from each other by a strip-shaped gap. Second, carbon ions are implanted into the metal substrate through the strip-shaped gaps. Third, the metal substrate is annealed to obtain the strip shaped graphene layer.
    Type: Grant
    Filed: December 29, 2012
    Date of Patent: March 10, 2015
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xiao-Yang Lin, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20150056380
    Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 26, 2015
    Applicant: ADVANCED ION BEAM TECHNOLOGY , INC.
    Inventors: Stephen Edward Savas, Xiao Bai, Zhimin Wan, Peter M. Kopalidis
  • Publication number: 20150045205
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: November 12, 2013
    Publication date: February 12, 2015
    Inventors: Guido Fridolin Verbeck, IV, Stephen Davila
  • Publication number: 20150037511
    Abstract: Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.
    Type: Application
    Filed: February 14, 2013
    Publication date: February 5, 2015
    Inventor: Richard S. Ray
  • Patent number: 8947826
    Abstract: A durable wear-resistant coating consists of an atomically mixed layer on the surface of the head or media which is developed by bombardment of the surface with energetic C ions with optimized parameters. This mixed layer is covered with a hard DLC overcoat. This mixed interlayer is able to strongly bond the overcoat to the head or media substrate and improve the tribological properties of the overcoat. In this method a very thin layer of a carbide former material can be used as an interlayer before bombarding the surface with C ions which provides a composite interlayer containing C and species from interlayer and substrate. This composite interlayer bonds the DLC overact to the ceramic substrate of the head or the metallic substrate of the media. This interlayer by itself is protective enough to protect the head media of the hard drives against wear and corrosion.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: February 3, 2015
    Assignee: National University of Singapore
    Inventors: Charanjit Singh Bhatia, Ehsan Rismani-Yazdi, Sujeet Kumar Sinha
  • Patent number: 8946651
    Abstract: An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: February 3, 2015
    Assignee: Seagate Technology LLC
    Inventors: Paul Stephen McLeod, Kueir-Weei Chour
  • Patent number: 8940266
    Abstract: The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: January 27, 2015
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno, Shinichi Shikata
  • Patent number: 8933424
    Abstract: An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: January 13, 2015
    Assignee: Axcelis Technologies, Inc.
    Inventor: Shu Satoh
  • Patent number: 8932686
    Abstract: A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He+ ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apart from a surface of the single-crystal base. In the separation step, the microcavities formed in the ion-implantation step are subjected to thermal stress to divide the separation layer of the piezoelectric single-crystal base, thereby detaching the single-crystal thin film.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: January 13, 2015
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Norihiro Hayakawa, Takashi Iwamoto, Hajime Kando
  • Publication number: 20140374376
    Abstract: A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Sethuraman Jayashankar, Michael C. Kautzky
  • Publication number: 20140370249
    Abstract: This invention is to provide a fluoride spray coating covered member having excellent resistance to halogen corrosion and resistance to plasma erosion and displaying identification symbols such as letters, numeric characters, graphic, pattern, firm name, serial number and so on. In the invention, one or more implanting gases selected from fluorine-containing gas, oxygen gas and inert gas are ion-implanted onto a white fluoride spray coating formed on a surface of a substrate, whereby at least a part of the surface of the white fluoride spray coating is changed into a black color to form a black ion-implanted layer.
    Type: Application
    Filed: January 16, 2013
    Publication date: December 18, 2014
    Applicant: TOCALO CO., LTD.
    Inventors: Yoshio Harada, Takema Teratani, Shinya Miki, Kenichiro Togoe
  • Publication number: 20140363678
    Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh
  • Publication number: 20140356547
    Abstract: A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.
    Type: Application
    Filed: May 29, 2013
    Publication date: December 4, 2014
    Applicant: Varian Semiconductor Equipment Associates Inc.
    Inventors: Bon-Woong Koo, Min-Sung Jeon, Yong-Tae Kim, Timothy J. Miller
  • Patent number: 8895874
    Abstract: Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: November 25, 2014
    Assignee: Averatek Corp.
    Inventors: Sunity Kumar Sharma, Alex Newsom Beavers, Jr., Thomas Furst
  • Patent number: 8889169
    Abstract: Irradiation of a surface of a material with a gas cluster ion beam modifies the wettability of the surface. The wettability may be increased or decreased dependent on the characteristics of the gas cluster ion beam. Improvements in wettability of a surface by the invention exceed those obtained by conventional plasma cleaning or etching. The improvements may be applied to surfaces of medical devices, such as vascular stents for example, and may be used to enable better wetting of medical device surfaces with liquid drugs in preparation for adhesion of the drug to the device surfaces. A mask may be used to limit processing to a portion of the surface. Medical devices formed by using the methods of the invention are disclosed.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: November 18, 2014
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Richard C. Svrluga
  • Patent number: 8883265
    Abstract: Provided is a method of manufacturing a magnetic recording medium capable of manufacturing at a high productivity a useful magnetic recording medium having high surface smoothness and excellent head floating characteristics. Such a method of manufacturing a magnetic recording medium includes: forming a magnetic layer on a nonmagnetic substrate; and partially injecting ions into the magnetic layer to modify magnetic characteristics at a location of the magnetic layer where the ions are injected and to form magnetically separated magnetic recording patterns, in which, when partially injecting ions into the magnetic layer, a carbon film is formed on the surface of the magnetic layer, the carbon film is partially thinned by patterning, and ions are partially injected into the magnetic layer through locations where the carbon film is thinned.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: November 11, 2014
    Assignee: Showa Denko K.K.
    Inventor: Masato Fukushima
  • Publication number: 20140329025
    Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.
    Type: Application
    Filed: July 19, 2014
    Publication date: November 6, 2014
    Inventors: John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn Naito, Scott Battle, John N. Gregg, Michael J. Wodjenski, Chongying Xu
  • Patent number: 8877654
    Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: November 4, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Helen Maynard, Vikram Singh, Svetlana Radovanov, Harold Persing
  • Publication number: 20140302252
    Abstract: Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.
    Type: Application
    Filed: April 2, 2014
    Publication date: October 9, 2014
    Applicant: FEI Company
    Inventors: Johannes Jacobus Lambertus Mulders, Remco Theodorus Johannes Petrus Geurts, Petrus Hubertus Franciscus Trompenaars, Eric Gerardus Theodoor Bosch
  • Patent number: 8852695
    Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: October 7, 2014
    Assignee: The Research Foundation for The State University of New York
    Inventors: Mengbing Huang, William T. Spratt
  • Publication number: 20140272181
    Abstract: In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Alexander C. Kontos, Frank Sinclair, Rajesh Dorai
  • Publication number: 20140272178
    Abstract: An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.
    Type: Application
    Filed: March 13, 2013
    Publication date: September 18, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Hua WANG, Ming-Te Chen, Sheng-Wei Lee