Inorganic Metal Compound Present In Plating Or Implanted Material (e.g., Nitrides, Carbides, Borides, Etc.) Patents (Class 427/530)
  • Patent number: 9809885
    Abstract: In a method for coating a sliding element, in particular a piston ring or a cylinder liner of an internal combustion engine, DLC phases are embedded into a hard material layer as said hard material layer is deposited. A sliding element, such as a piston ring or a cylinder liner of an internal combustion engine, comprises a hard material layer with embedded DLC phases.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: November 7, 2017
    Assignee: Federal-Mogul Burscheid GmbH
    Inventors: Steffen Hoppe, Manfred Fischer, Marcus Kennedy
  • Patent number: 9507255
    Abstract: In a method of manufacturing an integrated circuit (IC) device, a photomask is wet-processed using a cleaning composition comprising an organic acid, an oxidizing agent, and deionized water (DIW).
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: November 29, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho-young Kim, Dong-min Kang, Sung-bae Kim, Hoon Han, Hong-kwon Youn, Hyo-sun Lee, Young-taek Hong
  • Patent number: 9481595
    Abstract: Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: November 1, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Hiroyuki Kubo, Shigeru Hashimoto, Keiji Hirabayashi, Koji Teranishi, Yusuke Owaki
  • Patent number: 9028923
    Abstract: The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: May 12, 2015
    Assignee: Korea Atomic Energy Research Institute
    Inventors: Jaewon Park, Chang-Kue Park, Jonghwa Chang, Byungho Choi, Yongwan Kim
  • Patent number: 9017830
    Abstract: The present invention provides a shearing die having longer life and a method for manufacturing the same. The shearing die includes a pair of substrates, at least one of which has a hard film formed by an arc ion plating method and located at least on a region of a curved surface and on an adjacent region from the end part of the curved surface on the side facing to the surface of the sheet or plate material to 300 ?m along the surface of the substrate. The hard film comprises Al and one or more of Ti and Cr, and has a thickness of 1 to 5 ?m, such that a number of metal particles having a diameter of 20 ?m or more, which are present on a line segment having a length of 10 mm on a surface of the hard film, is 2 or less.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: April 28, 2015
    Assignees: Kobe Steel, Ltd., Nippon Koshuha Steel Co., Ltd.
    Inventors: Kenji Yamamoto, Yasuhiro Hayashida, Junji Yoshida
  • Patent number: 8975603
    Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: March 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Shu Qin, Allen McTeer
  • Publication number: 20150045205
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: November 12, 2013
    Publication date: February 12, 2015
    Inventors: Guido Fridolin Verbeck, IV, Stephen Davila
  • Patent number: 8945689
    Abstract: A method of preparing hydrotalcite for a PVC stabilizer, which comprises: forming crystals of hydrotalcite represented by a formula of M(II)XM(III)Y(OH)N(Am—)Z. nH2O, wherein M(II) is a divalent metal selected from Mg2+, Ni2+ and Zn2+; M(III) is a trivalent metal selected from Al3+, Fe3+, Cr3+ and Co3+; and Am— is an anion selected from CO32-, OH—, NO3-, SO42- and halides; and depositing zinc (Zn) onto the hydrotalcite by using any one method of electrode-position, chloride ion deposition, and plasma deposition to provide zinc-deposited hydrotalcite.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: February 3, 2015
    Inventor: Dae Hee Lee
  • Publication number: 20150014902
    Abstract: A die for extrusion molding includes a first face, a second face, a raw material supply section, a molding section, and a structure. The molding section has a second through hole that extends from the second face toward the first face so as to communicate with a first through hole. The structure is such that a material for the die is machined to form the material into a predetermined shape and to provide a machining-affected layer on an inner wall surface of the second through hole in the molding section, an oxidized layer is provided by heating the machining-affected layer to oxidize the machining-affected layer so as to convert the machining-affected layer into the oxidized layer, the oxidized layer is removed so that a treated surface is provided, and the treated surface is nitrided by ion implantation to provide a nitride layer.
    Type: Application
    Filed: September 29, 2014
    Publication date: January 15, 2015
    Applicant: IBIDEN CO., LTD.
    Inventors: Kiyotaka ANDO, Shuichi KAWANO, Makoto ASAI
  • Publication number: 20150017343
    Abstract: A die for extrusion molding includes a first face, a second face, a raw material supply section, and a molding section. The second face is provided opposite the first face. The raw material supply section includes a first through hole that extends from the first face toward the second face. The molding section includes a second through hole and a nitride layer. The second through hole extends from the second face toward the first face so as to communicate with the first through hole. The nitride layer is provided on an inner wall surface of the second through hole.
    Type: Application
    Filed: September 29, 2014
    Publication date: January 15, 2015
    Applicant: IBIDEN CO., LTD.
    Inventors: Kiyotaka ANDO, Shuichi KAWANO
  • Patent number: 8828854
    Abstract: A method of introducing dopants into a semiconductor wafer includes implanting the dopants into a region below a surface of the semiconductor wafer using an ion beam to form a first implanted layer. The dopants when activated causing a conductivity of the implanted layer to be either of N-type or P-type. The first implanted layer is characterized by a peak dopant concentration at a first depth below the surface of the semiconductor wafer. The method also includes removing a layer from the semiconductor wafer surface, wherein said layer includes a portion of said dopants.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: September 9, 2014
    Inventor: Tzu-Yin Chiu
  • Publication number: 20140205763
    Abstract: Large area graphene can be fabricated by depositing carbon and catalytic metal thin film(s) on a substrate, heating the carbon and the catalytic metal, and forming graphene on the substrate. The catalytic metal is evaporated during the heating process. The catalytic metal can be, for example, nickel, cobalt, or iron.
    Type: Application
    Filed: January 22, 2014
    Publication date: July 24, 2014
    Inventors: Yongfeng Lu, Wei Xiong, Yunshen Zhou
  • Publication number: 20140178637
    Abstract: Provided are low friction coatings with improved abrasion, wear resistance and methods of making such coatings. In one form, the coating includes: i) an under layer selected from the group consisting of CrN, TiN, TiAlN, TiAlVN, TiAlVCN, TiSiN, TiSiCN, TiAlSiN and combinations thereof, wherein the under layer ranges in thickness from 0.1 to 100 ?m, ii) an adhesion promoting layer selected from the group consisting of Cr, Ti, Si, W, CrC, TiC, SiC, WC, and combinations thereof, wherein the adhesion promoting layer ranges in thickness from 0.1 to 50 ?m and is contiguous with a surface of the under layer, and iii) a functional layer selected from the group consisting of a fullerene based composite, a diamond based material, diamond-like-carbon and combinations thereof, wherein the functional layer ranges from 0.1 to 50 ?m and is contiguous with a surface of the adhesion promoting layer.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Applicant: EXXONMOBIL RESEARCH AND ENGINEERING COMPANY
    Inventors: Srinivasan Rajagopalan, Tabassumul Haque, Mehmet Deniz Ertas, Adnan Ozekcin, HyunWoo Jin, Bo Zhao
  • Patent number: 8747599
    Abstract: The present invention relates to a process for making self-patterning substrates comprising the steps of providing electrically conductive traces on a substrate; pre-coating the substrate with at least a layer of complementary reactant electrically resistant reactant formulations; altering the conductivity of complementary reactant formulation selectively upon application of external source of energy and a self-patterning substrate using the said process.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: June 10, 2014
    Inventors: Chidella Krishna Sastry, Chidella Venkata Krishna Mohan Sharma, Srinivas Tangirala
  • Publication number: 20140106186
    Abstract: A lithium ion battery includes an anode and a cathode. The cathode includes a lithium, manganese, nickel, and oxygen containing compound. An electrolyte is disposed between the anode and the cathode. A protective layer is deposited between the cathode and the electrolyte. The protective layer includes pure lithium phosphorus oxynitride and variations that include metal dopants such as Fe, Ti, Ni, V, Cr, Cu, and Co. A method for making a cathode and a method for operating a battery are also disclosed.
    Type: Application
    Filed: October 12, 2012
    Publication date: April 17, 2014
    Applicant: UT-BATTELLE, LLC
    Inventor: UT-BATTELLE, LLC
  • Patent number: 8654446
    Abstract: An optical element or module is designed to be placed in front of an optical sensor of a semiconductor component. At least one optically useful part of the element or module is provided through which the image to be captured is designed to pass. A method for obtaining such an optical element or module includes forming at least one through passage between a front and rear faces of the element or module. The front and rear faces are covered with a mask. Ion doping is introduced through the passage. As a result, the element or module has a refractive index that varies starting from a wall of the through passage and into the optically useful part. An image capture apparatus includes an optical imaging module having at least one such element or module.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: February 18, 2014
    Assignee: STMicroelectronics S.A.
    Inventors: Emmanuelle Vigier-Blanc, Guillaume Cassar
  • Patent number: 8642135
    Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
    Type: Grant
    Filed: September 1, 2005
    Date of Patent: February 4, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Shu Qin, Allen McTeer
  • Patent number: 8597797
    Abstract: [Task] The chromium nitride ion-plating coating has a property that it is hard but is liable to peel off. Year by year, the required level of wear resistance and scuffing resistance becomes higher in a diesel engine. The property of a coating is improved to enhance the wear resistance and scuffing resistance and also to improve resistance against peeling off. [Means for Solution] (1) Composition is mainly composed of chromium, nitrogen, and carbon, and the concentration of carbon relative to the total concentration of the main components is from 4 to 8% by weight. (2) The crystal structure is that texture of the CrN (111) plane orientation is from 0.4 to 2.0 in terms of a CrN (111) structural coefficient. (3) Vickers hardness is from Hv 1600 to Hv 2000.
    Type: Grant
    Filed: November 12, 2007
    Date of Patent: December 3, 2013
    Assignee: Kabushiki Kaisha Riken
    Inventors: Takuma Sekiya, Terushige Ueda, Yuji Shima, Shigeo Inoue
  • Publication number: 20130277550
    Abstract: A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: Gordon A. Jones, David S. Douce, Amir Farooq
  • Patent number: 8551578
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: October 8, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Omkaram Nalamasu, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Patent number: 8535766
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: September 17, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Patent number: 8435633
    Abstract: To provide a laminate excellent in weather resistance, moisture-proof property, adhesion between layers and its long-term stability, and a process for its production. A laminate comprising a substrate sheet containing a fluororesin, an adhesive layer, and a moisture-proof layer containing, as the main component, at least one inorganic compound selected from the group consisting of an inorganic oxide, an inorganic nitride and an inorganic oxynitride, laminated in this order, wherein the adhesive layer contains, as the main component, at least one metal oxide selected from the group consisting of zirconium oxide, tantalum oxide and hafnium oxide.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: May 7, 2013
    Assignee: Asahi Glass Company, Limited
    Inventors: Naoto Kihara, Takuya Nakao, Hiroshi Aruga, Eiji Shidoji
  • Patent number: 8389390
    Abstract: A method of introducing an impurity into a wafer surface is provided. The method comprises the steps of: low energy implantation of impurity into a surface of the wafer to generate an implanted dopant layer; and simultaneously removing an implanted surface of the implanted dopant layer to generate a doping profile with controlled areal impurity dosage.
    Type: Grant
    Filed: April 10, 2008
    Date of Patent: March 5, 2013
    Inventor: Tzu-Yin Chiu
  • Patent number: 8389068
    Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: March 5, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: W. Karl Olander, Jose I. Arno, Robert Kaim
  • Publication number: 20120292500
    Abstract: A mass spectrometer includes an ion source, which includes a coating or surface formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.
    Type: Application
    Filed: November 11, 2011
    Publication date: November 22, 2012
    Applicant: MICROMASS UK LIMITED
    Inventors: Gordon A. Jones, David S. Douce, Amir Farooq
  • Patent number: 8304033
    Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: November 6, 2012
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20120183803
    Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, Gd ions is implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.
    Type: Application
    Filed: August 19, 2011
    Publication date: July 19, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD
    Inventors: HSIN-PEI CHANG, WEN-RONG CHEN, HUANN-WU CHIANG, CHENG-SHI CHEN, YI-CHI CHAN, XIAO-QIANG CHEN
  • Publication number: 20120171514
    Abstract: A housing is provided which includes an aluminum or aluminum alloy substrate, an aluminum layer and a corrosion resistant layer formed on the aluminum or aluminum alloy substrate in that order. The corrosion resistant layer is an Al—C—N layer. Then, La ions is implanted in the Al—C—N layer by ion implantation process. The atomic percentages of N and C in the Al—C—N gradient layer gradually increase from the side of Al—C—N gradient layer near the aluminum or aluminum alloy substrate to the other side of Al—C—N gradient layer, away from aluminum or aluminum alloy substrate. Therefore the housing has a high corrosion resistance. A method for making the housing is also provided.
    Type: Application
    Filed: August 19, 2011
    Publication date: July 5, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY ( ShenZhen) CO., LTD.
    Inventors: HSIN-PEI CHANG, WEN-RONG CHEN, HUANN-WU CHIANG, CHENG-SHI CHEN, YI-CHI CHAN, XIAO-QIANG CHEN
  • Patent number: 8202820
    Abstract: A mixed anatase-rutile phase, non-stoichiometric titania photocatalyst material is a highly reactive and is a UV and visible light responsive photocastalyst in the as-deposited condition (i.e. without the need for a subsequent thermal treatment). The mixed phase, non-stoichiometric titania thin film material is non-stoichiometric in terms of its oxygen content such that the thin film material shows a marked red-shift in photoresponse.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: June 19, 2012
    Assignee: Northwestern University
    Inventors: Le Chen, Kimberly A. Gray, Michael E. Graham
  • Publication number: 20120148864
    Abstract: A coated article includes a substrate, an anti-corrosion layer formed on the substrate, and a decorative layer formed on the anti-corrosion layer. The substrate is made of aluminum or aluminum alloy. The anti-corrosion layer includes an aluminum-copper alloy layer formed on the substrate and an aluminum nitride layer formed on the aluminum-copper alloy layer. The coated article has good corrosion resistance.
    Type: Application
    Filed: August 19, 2011
    Publication date: June 14, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY ( ShenZhen) CO., LTD.
    Inventors: HSIN-PEI CHANG, WEN-RONG CHEN, HUANN-WU CHIANG, CHENG-SHI CHEN, XIAO-QIANG CHEN
  • Patent number: 8192805
    Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: June 5, 2012
    Assignee: TEL Epion Inc.
    Inventors: Noel Russell, Steven Sherman, John J. Hautala
  • Publication number: 20120107536
    Abstract: An amorphous alloy housing includes an amorphous alloy substrate and a wear-resistant protective layer formed on the amorphous alloy substrate by vacuum deposition technology. A method for making the amorphous alloy housing is also provided.
    Type: Application
    Filed: April 12, 2011
    Publication date: May 3, 2012
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: YANG-YONG LI, YI-MIN JIANG, KAI LUO
  • Publication number: 20120070693
    Abstract: The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.
    Type: Application
    Filed: May 28, 2010
    Publication date: March 22, 2012
    Applicant: CANON ANELVA CORPORATION
    Inventors: Einstein Noel Abarra, Tetsuya Endo
  • Publication number: 20120070589
    Abstract: A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 22, 2012
    Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi
  • Patent number: 8119208
    Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.
    Type: Grant
    Filed: April 18, 2008
    Date of Patent: February 21, 2012
    Assignee: City University of Hong Kong
    Inventors: Paul K. Chu, Liuhe Li
  • Publication number: 20120021137
    Abstract: A method for manufacturing a cutting tool includes the steps of providing a body of cermet or cemented carbide, having a cutting edge with an edge radius Re smaller than 40 ?m, a flank a rake face, applying by PVD a single or a multilayer coating to at least a part of the surface of the body, comprising at least a part of the cutting edge and applying by PVD said single or multilayer coating, comprising PVD coating with at least one oxidic layer.
    Type: Application
    Filed: September 29, 2011
    Publication date: January 26, 2012
    Applicant: OERLIKON TRADING AG, TRUEBBACH
    Inventors: Dennis T. QUINTO, Christian WOHLRAB, Jürgen RAMM
  • Publication number: 20120021199
    Abstract: Provided is a surface-coated cutting tool combining superior heat resistance, superior wear resistance, and superior lubricity. A surface-coated cutting tool of the present invention includes a substrate and a coating formed on the substrate, and the coating is characterized in that the coating is formed by physical vapor deposition and includes one or more layers, that at least one of the one or more layers is a first coating layer, and that the first coating layer contains aluminum and nitrogen, has a thermal effusivity of 2,000 to 5,000 J·sec?1/2·m?2·K?1, has a thickness of 0.2 to 5 ?m, and has a crystal structure including a hexagonal structure.
    Type: Application
    Filed: December 3, 2010
    Publication date: January 26, 2012
    Applicant: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Sachiko Koike, Shinya Imamura, Kazuo Yamagata
  • Publication number: 20110269619
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: April 19, 2011
    Publication date: November 3, 2011
    Applicant: University of North Texas
    Inventors: Guido Fridolin Verbeck, Stephen Davila
  • Publication number: 20110256715
    Abstract: A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
    Type: Application
    Filed: April 16, 2010
    Publication date: October 20, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shing-Chyang PAN, Han-Hsin KUO, Chung-Chi KO, Ching-Hua HSIEH
  • Patent number: 8009387
    Abstract: A method for forming a protective bilayer on a magnetic read/write head or magnetic disk. The bilayer is formed as an adhesion enhancing underlayer and a protective diamond-like carbon (DLC) overlayer. The underlayer is formed of an aluminum or alloyed aluminum oxynitride, having the general formula AlOxNy or MezAlOxNy where Mez symbolizes Tiz, Siz or Crz and where x, y and z can be varied within the formation process. By adjusting the values of x and y the adhesion underlayer contributes to such qualities of the protective bilayer as stress compensation, chemical and mechanical stability and low electrical conductivity. Various methods of forming the underlayer are provided, including reactive ion sputtering, plasma assisted chemical vapor deposition, pulsed laser deposition and plasma immersion ion implantation.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: August 30, 2011
    Assignee: SAE Magnetics (HK) Ltd.
    Inventors: Shide Cheng, Zhu Feng, Ellis T. Cha
  • Patent number: 7988836
    Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: August 2, 2011
    Assignee: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Publication number: 20110180761
    Abstract: The invention provides methods for the application of active materials onto active surfaces useful in organic electronic devices. The methods of the invention include selecting a liquid composition including an active material and a suitable liquid medium whereby when the liquid composition is deposited on the desired active surface it has no greater than about a 40° contact angle; treating the active surface to raise its surface tension before the deposition of a liquid composition containing the desired active material is deposited thereon; and combination thereof. The invention also provides organic electronic devices having at least two active layers, wherein at least one active layer comprises an active material that was deposited using at least one practice of the method of the invention.
    Type: Application
    Filed: April 5, 2011
    Publication date: July 28, 2011
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: VIACHESLAV A. PETROV, Daniel David Lecloux
  • Patent number: 7981483
    Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: July 19, 2011
    Assignee: TEL Epion Inc.
    Inventors: Noel Russell, Steven Sherman, John J. Hautala
  • Publication number: 20110095226
    Abstract: A method of preparing hydrotalcite for a PVC stabilizer, which comprises: forming crystals of hydrotalcite represented by a formula of M(II)XM(III)Y(OH)N(Am—)Z?nH2O, wherein M(II) is a divalent metal selected from Mg2+, Ni2+ and Zn2+; M(III) is a trivalent metal selected from Al3+, Fe3+, Cr3+ and Co3+; and Am— is an anion selected from CO32-, OH—, NO3-, SO42- and halides; and depositing zinc (Zn) onto the hydrotalcite by using any one method of electrode-position, chloride ion deposition, and plasma deposition to provide zinc-deposited hydrotalcite.
    Type: Application
    Filed: May 21, 2008
    Publication date: April 28, 2011
    Inventor: Dae Hee Lee
  • Publication number: 20100295251
    Abstract: [Task] The chromium nitride ion-plating coating has a property that it is hard but is liable to peel off. Year by year, the required level of wear resistance and scuffing resistance becomes higher in a diesel engine. The property of a coating is improved to enhance the wear resistance and scuffing resistance and also to improve resistance against peeling off. [Means for Solution] (1) Composition is mainly composed of chromium, nitrogen, and carbon, and the concentration of carbon relative to the total concentration of the main components is from 4 to 8% by weight. (2) The crystal structure is that texture of the CrN (111) plane orientation is from 0.4 to 2.0 in terms of a CrN (111) structural coefficient. (3) Vickers hardness is from Hv 1600 to Hv 2000.
    Type: Application
    Filed: November 12, 2007
    Publication date: November 25, 2010
    Inventors: Takuma Sekiya, Terushige Ueda, Yuji Shima, Shigeo Inoue
  • Patent number: 7838061
    Abstract: Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: November 23, 2010
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Sang Soo Oh, Ho Seop Kim, Kyu Jung Song, Do Jun Youm, Sun Mi Lim, Yong Hwan Jung, Sang Moo Lee, Ye Hyun Jung, Jae Eun Yoo
  • Publication number: 20100210489
    Abstract: The invention aims at providing a hard coating film excellent in lubrication characteristics; a process for the formation thereof; and tools for the plastic working of metal, and provides a hard coating film covering the surface of a substrate to come into contact with other member, wherein carbon atoms having carbon-carbon bonds are present in an amount of 10 at % or above. It is preferable that the hard coating film contain titanium carbide, while it is preferable to form a titanium nitride coating layer between the surface of the substrate and the hard coating film. The invention also provides a process for the formation of a hard coating film on the surface of a substrate by arc ion plating which comprises introducing a hydrocarbon gas during the arc ion plating with a metal target and which makes it possible to form on the surface of a substrate a coating film where carbon atoms having carbon-carbon bonds are present in an amount of 10 at % or above.
    Type: Application
    Filed: December 21, 2007
    Publication date: August 19, 2010
    Applicant: HITACHI METALS, LTD.
    Inventors: Fumiaki Honda, Ken Inoue, Kenichi Inoue
  • Patent number: 7771836
    Abstract: A golden ornament includes a base material; a Ti coating film which is formed on a surface of the base material in an atmosphere of an inert gas other than nitrogen and whose Ti atom content is constant in the thickness direction; a TiN gradient coating film which is formed on the Ti coating film and whose N atom content has a gradient in the thickness direction; a TiN coating film which is formed on the TiN gradient coating film and whose contents of Ti atoms and N atoms are constant in the thickness direction; an Au—TiN mixture gradient coating film which is formed on the TiN coating film and whose Au atom content has a gradient in the thickness direction; and an Au—TiN mixture coating film which is formed on the Au—TiN mixture gradient coating film and whose contents of Au atoms, Ti atoms, and N atoms are constant in the thickness direction.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: August 10, 2010
    Assignee: Citizen Holdings Co., Ltd.
    Inventors: Koichi Naoi, Fumio Tase, Yukio Miya, Osamu Tanaka, Masayoshi Ushikubo
  • Patent number: 7759657
    Abstract: Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: July 20, 2010
    Assignee: Axcelis Technologies, Inc.
    Inventors: Daniel R. Tieger, Patrick R. Splinter
  • Patent number: 7732014
    Abstract: A method for diffusing titanium and nitride into a base material having a generally compact, granular microstructure (e.g., carbide). The method generally includes the steps of providing a base material having a generally compact, granular microstructure; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, the base material may further be treated with conventional surface treatments or coatings.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: June 8, 2010
    Inventors: Philos Jongho Ko, Bongsub Samuel Ko