Abstract: According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

Abstract: A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources.

Abstract: Disclosed is a method for inscribing or marking surfaces (1), especially metal surfaces. In said method, the surface (1) that is to be inscribed or marked is coated with an absorption promoter (2) in a first step, whereupon a high-energy beam (4), e.g. a laser beam, which colors the surface (1) as a result of the interaction with the absorption promoter by means of a temperature increase, is applied to surface elements that re to be inscribed or colored.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: The present disclosure relates to methods and systems that provide heat, via at least Photon-Electron resonance, also known as excitation, of at least a particle utilized, at least in part, to initiate and/or drive at least one catalytic chemical reaction. In some implementations, the particles are structures or metallic structures, such as nanostructures. The one or more metallic structures are heated at least as a result of interaction of incident electromagnetic radiation, having particular frequencies and/or frequency ranges, with delocalized surface electrons of the one or more particles. This provides a control of catalytic chemical reactions, via spatial and temporal control of generated heat, on the scale of nanometers as well as a method by which catalytic chemical reaction temperatures are provided.

Abstract: The invention concerns a method for making an article having a tunable adhesive, said method comprising applying strain to mechanically deform a substrate in at least one direction; applying a rigid coating layer on the substrate; and releasing the strain to form an article having a rippled surface. Ripple characteristics can be altered by mechanical strain in real time which further changes the adhesion properties.

Abstract: A method of coating a substrate includes: providing a substrate (1), producing an atmospheric pressure plasma discharge in the presence of a gas, at least partially exposing the substrate to the atmospheric pressure plasma discharge. The method also includes introducing a liquid aerosol (6) of coating forming material into the atmospheric pressure plasma discharge, thereby forming a coating on the substrate, curing the substrate and coating, by exposing the substrate to ultraviolet light.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A method for forming a film of material using chemical vapor deposition. The method includes providing a substrate comprising a pattern of at least one metallic nanostructure, which is made of a selected material. The method includes determining a plasmon resonant frequency of the selected material of the nanostructure and exciting a portion of the selected material using an electromagnetic source having a predetermined frequency at the plasmon resonant frequency to cause an increase in thermal energy of the selected material. The method includes applying one or more chemical precursors overlying the substrate including the selected material excited at the plasmon resonant frequency and causing selective deposition of a film overlying at least the portion of the selected material.

Abstract: A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

Abstract: A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system (100) comprising a vacuum ultraviolet rays generating section (102), a reaction room (106), and a window (104) for separating the reaction room (106) and the vacuum ultraviolet rays generating section (102). Plasma having an energy larger than 0 eV but smaller than 10 eV and organic material gas are supplied to the reaction room. A substrate (116) in the reaction room (106) is heated to maintain such a temperature as not causing damage on the substrate (116). Vacuum ultraviolet rays is applied from the vacuum ultraviolet rays generating section (102) to the inside of the reaction room (106) through the window (104).

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the-substrate, at a reduced power consumption.

Abstract: A thin film forming equipment and a method for forming thin films are provided which are capable of forming the thin film of high quality and of effectively preventing CVD material gas from leaking to surroundings at a low cost. The thin film equipment contains a substrate, a substrate holding device used to hold the substrate and a device used to provide an atmospheric gas to a surface of the substrate held by the substrate holding device, wherein an upper face of the substrate held by the substrate holding device and an upper face of the substrate holding device are almost on one plane.

Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.

Abstract: An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer.

Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

Abstract: The invention relates to a method and a device for coating substrates in a vacuum, in which a plasma is generated from a target using a laser beam and ionized particles of the plasma are deposited on the substrate in the form of a layer, inert reactive gas or a gas mixture being supplied. The solution according to the invention is intended to provide a possible way of supplying gases or gas mixtures in a locally and temporally defined manner. According to the invention, this object is achieved by the fact that the gas or gas mixture is supplied to the plasma from and/or through a porous target, the intention being that the target is to have a temporary storage function on account of its porosity.

Abstract: Microreaction molds and methods of molding very thin films onto substrate surfaces are provided. The molds and molding methods allow for consistency and uniformity in the thicknesses of the films that are applied to the substrate surfaces. The molds may be single composite, such as etched silica, or multicomposite, such as quartz/metal. The molds may further comprise an adjustable molding cavity. The molds of this invention are particularly applicable to generating thin polymeric films onto microchip substrates.

Abstract: In a method for manipulating particles arranged in a plasma-cristalline state in a plasma of a carrier gas, the particles are at least partially subject to plasma treatment and/or applied to a substrate surface. A device for manipulating of particles in plasma-cristalline state includes a reaction vessel, in which plasma electrodes and at least one substrate are situated. An adaptive electrode for formation of a location selective low frequency or static electrical field in the reaction vessel is described.

Abstract: Formation of for example yttria stabilized zirconia films of significant 001 orientation on a variety of substrates including amorphous material and room temperature limited material is disclosed. The yttria stabilized zirconia film formation is achieved using pulsed laser ablation of a polycrystalline yttria stabilized zirconia target source while the substrate is electrically biased, disposed at a selected angle and maintained at substantially room temperature in the presence of an argon atmosphere. The film formation uses low bias voltage, requires no ion beam apparatus and employs low temperatures sufficient only to enable process stabilization. Film formation is accomplished in a step sequence wherein each step responds to temporal and spatial component segregations occurring in a laser-ablated ion plume.

Abstract: A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

Abstract: The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference electrodes. The control electrodes are biased with a negative potential. The plasma assumes a potential more positive than the control electrodes. The reference electrodes are then biased to be more positive than the plasma. Hence, negative ions or negatively-charged particulates in the plasma are attracted to the more positive reference electrodes, and thus escape the plasma without being trapped therein, and are not available to serve as nucleation or agglomeration points for contaminants. A pair of Helmholtz coils produce a magnetic field having magnetic field lines that run longitudinally between the control electrodes.

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

Abstract: A process for depositing a film at a high rate and with superior step coverage properties, which comprises installing a pair of electrodes crossing with another pair of electrodes making a right angle with respect to the another pair, and applying a high frequency power differing in phase to the electrodes in order to apply a high frequency power having a Lissajous' waveform in the reaction space during the deposition of a film on a substrate.

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

Abstract: A novel method for producing thick composite parts based upon photopolymerizable compositions is disclosed. Also disclosed are novel methods for encapsulation of microelectronic devices based upon novel photopolymerizable compositions. The constituents of the photopolymerizable mixture comprise a monomer or monomers capable of polymerizing by free radical or cationic mechanisms, and a photoinitiator system which possesses an absorbance characteristic which is effectively reduced, or self-eliminating, upon initiation of the polymerization reaction. Parts having thicknesses up to 2 cm and thicker for varying end use applications are made by photopolymerizing such compositions. In addition, using such compositions composite parts can be made using a reinforcement material such as a glass fiber mat present in an amount by weight of from about 5 to about 70%.

Abstract: A first reactive gas is introduced into a vacuum chamber and a plasma of the thus introduced reactive gas is produced. A second reactive gas is introduced into a radical generating chamber and is dissociated to generate radicals whose density and composition are well controlled. Then, the thus generated radicals are injected into the plasma generated within the vacuum chamber such that an amount of a desired kind of radicals within the plasma is selectively increased or decreased. In this manner, a thin film having an excellent property can be deposited on a substrate placed in the vacuum chamber. Alternatively, a surface of a substrate placed in the vacuum chamber can be processed precisely and selectively.

Abstract: In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

Abstract: A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: Master disks for providing dies in particular for pressing optical disks, methods of manufacturing same, pressing dies obtained from such master disks and optical disks obtained from the latter and such pressing dies, the master disks consisting of a support carrying at its surface a succession of microcups representative of the information to be duplicated and consisting of a hard, conducting material reflecting in the near infrared range and selected from a zirconium, hafnium or titanium nitride or carbonitride, a hard ceramic reflecting in the near infrared range and conducting at the surface only and a hard glass reflecting in the near infrared range and conducting at the surface only.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: In order to improve a process and an apparatus for producing a functional structure of a semiconductor component, which comprises layers arranged on a base substrate and defining the entire functions of the semiconductor component, such that the functional structure of the semiconductor components can be produced as simply as possible and with as little susceptibility as possible with respect to the quality of the semiconductor components it is suggested that all the layers be produced without lithography and applied to the base substrate one after the other exclusively with physical layer application processes.

Abstract: A plasma processing apparatus for processing a base substance installed within a processing chamber into which predetermined gases are flowed and which is maintained at a predetermined pressure by producing a plasma within said processing chamber is characterized by comprising plasma producing means for producing the plasma within said processing chamber including at least two ground electrodes provided on external peripheries of said processing chamber, and an rf electrode provided on external periphery of said processing chamber between said two ground electrodes, and magnetic field producing means for producing a magnetic field orthogonal to an electric field formed by said plasma producing means.

Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted. A support positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. First and second conductive electrodes positioned within the implantation chamber include conductive surfaces in proximity to the chamber interior occupied by the one or more workpieces. A voltage source outside the chamber relatively biases the first and second conductive electrodes.

Abstract: A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

Abstract: Laser energy is used to make precursors of crystalline materials, such as diamond, by providing an environment in which optical radiation may be efficiently absorbed to create significant precursor concentrations. In some instances this process is augmented by evaporating or liquefying a sacrifice to induce heterogeneous nucleation. In other cases two chemically and spatially distinct plasmas are juxtaposed to initiate the required chemistry.

Abstract: A substrate-heating mechanism has a heat source for heating a substrate for heating a substrate face side reverse to a film formation face in a film deposition on the film formation surface of the substrate held on a substrate holder in a vacuum chamber, the mechanism comprises a second vacuum chamber for maintaining vacuum the substrate face reverse to the film formation face.

Abstract: A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: To provide a process for coating substrate material in which coating material is ablated in an ablation region by a laser beam in a coating chamber containing a negative pressure, propagates in the form of a coating particle stream in the direction of the substrate material and is deposited on it in the form of a coating, with which substrate material can be coated in large quantities by laser ablation, it is proposed that the substrate material be flat material, that the flat material be passed continuously as a continuous strip through the coating chamber and coated under the negative pressure substantially maintained therein, and that the necessary coating material be fed to the coating chamber while the negative pressure is substantially maintained therein.

Abstract: A process for forming a diamond gas phase synthesized coating film which is easily controlled and affords a high quality, good adhesion strength diamond film includes a step of forming a mixed layer of a plasma spraying material and diamond by simultaneously conducting plasma injection by a plasma spraying, a first torch and plasma CVD by a CVD plasma, second torch to thereby form a mixed layer on the substrate. The first and second torches are structurally distinct and have respective, separately and selectively controlled plasma generation operating conditions.

Abstract: In order to enable formation of a smooth and dense oxide superconducting film with no clear appearance of grain boundaries in a fine structure even at a high film forming rate, a laser ablation method is employed to apply a laser beam 2 to a target 1 containing components of an oxide superconductive material and deposit particles, which are thus scattered from the target 1, on a substrate 3, while gaseous oxygen is supplied from a gaseous oxygen inlet 7 toward laser plume 6, which is generated by the application of the laser beam 2, and to a portion of the target irradiated with said laser.

Abstract: A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material.

Abstract: Transparent, refractory coatings and methods for their application to environmentally exposed substrates are disclosed. The coatings can be deposited over organic decorative materials, which generally prevent application of hard, protective, inorganic materials due to emission of exudates and vulnerability to excessive heat. The coatings are applied using plasma-enhanced chemical-vapor deposition techniques that reduce reaction temperatures and produce multilayer structures that seal organic exudates before a final layer of coating is applied, such multilayer protective coating structures being particularly suitable for protecting automobile bodies and the like against degrading external forces.

Abstract: A laser beam 5 is directed to a target made of an oxide superconductor to allow a target spot which is irradiated with the beam to be evaporated and a matter which is evaporated to be deposited as a thin film on the surface of a substrate 3 at which time excited oxygen is supplied to or near a thin film deposition site on the substrate 3. In this way, an oxide superconductor thin film is formed on the substrate with oxygen atoms incorporated in the crystal structure of the thin film.

Abstract: A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the reaction vessel, and cooling the semiconductor substrate below the liquid faction temperature of the deposit species to cause the deposit species to become a material deposited on the semiconductor substrate.

Abstract: A method of coating a surface with a polymer layer, which method comprises exposing said surface to a plasma comprising a monomeric unsaturated organic compound which comprises a chain of carbon atoms, which are optionally substituted by halogen; provided that where the compound is a perhalogenated alkene, it has a chain of at least 5 carbon atoms; so as to form an oil or water repellent coating on said substrate.