Plasma (e.g., Corona, Glow Discharge, Cold Plasma, Etc.) Patents (Class 427/569)
  • Patent number: 10854431
    Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: December 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Yoshinobu Ohya, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
  • Patent number: 10845715
    Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: November 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Viachslav Babayan, Ludovic Godet, Kyle M. Hanson, Robert B. Moore
  • Patent number: 10835908
    Abstract: Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: November 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Miyako Kaneko, Takehiko Orii, Itaru Kanno
  • Patent number: 10822701
    Abstract: A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as to stabilize the retaining device with respect to deformations and temperature. The gas inlet organ is secured, at a plurality of suspension points, to the retaining device by means of a plurality of hanging elements distributed over the entire horizontal surface of the retaining device. The retaining device has mechanical stabilization elements formed by a retaining frame having vertical walls that are interconnected at vertical connection lines. An actively cooled heat shield is situated between the retaining device and the gas inlet organ.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: November 3, 2020
    Assignee: AIXTRON SE
    Inventors: Walter Franken, Bernhard Zintzen, Henricus Wilhelmus Aloysius Janssen
  • Patent number: 10790140
    Abstract: In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. The method further comprises repeating (a), (b), (c), and (d) until a predetermined number of first film layers and second film layers have been deposited on the substrate. The first film layer is a silicon oxide layer and the second film layer is a silicon nitride layer.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: September 29, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinhai Han, Deenesh Padhi, Masaki Ogata, Yinan Zhang, Shaunak Mukherjee
  • Patent number: 10787736
    Abstract: A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor in which a reactive gas is introduced to perform a polysilicon manufacturing process by a chemical vapor deposition (CVD) method; and a slit-type nozzle installed at the reactor and spraying a gas inside the reactor to prevent absorption of silicon particles during a process.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: September 29, 2020
    Assignee: HANWHA CHEMICAL CORPORATION
    Inventors: Hee Dong Lee, Ji Ho Kim, Sung Eun Park, Hyo Jin Jeon
  • Patent number: 10761029
    Abstract: Specialized linkage assemblies for Laser-Induced Breakdown Spectroscopy (“LIBS”) systems are provided. The linkage assemblies may facilitate the attachment of the laser housing of the LIBS system onto an existing sample supply chamber, such as a volumetric or gravimetric feeder. Generally, the linkage assemblies may comprise a specialized purge head and inert gas assembly that facilitate the attachment of the laser housing and may enhance the functionality of the LIBS system.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: September 1, 2020
    Assignee: Schenck Process LLC
    Inventors: Randy James Monahan, John Joseph Nowakowski, Lauren Elizabeth Callahan, Geoffrey K. Urbanek
  • Patent number: 10748783
    Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: August 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Adib M. Khan, Qiwei Liang, Sultan Malik, Srinivas D. Nemani
  • Patent number: 10676813
    Abstract: This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 9, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventor: Masahiro Atsumi
  • Patent number: 10640869
    Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuyuki Okuda, Masayoshi Minami, Yoshinobu Nakamura, Kosuke Takagi, Yukinao Kaga, Yuji Takebayashi
  • Patent number: 10633736
    Abstract: A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a sputtering chamber, a film formation processing unit including a mount surface and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region to provide a file formation apparatus which employs a simple structure that is capable of suppressing heating of electronic components.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: April 28, 2020
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Akihiko Ito, Yoshinao Kamo, Shigeki Matsunaka, Atsushi Fujita
  • Patent number: 10593560
    Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: March 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonwook Jung, Junghoon Kim, Satoru Kobayashi, Kenneth D. Schatz, Soonam Park, Dmitry Lubomirsky
  • Patent number: 10583494
    Abstract: A coated drill includes a substrate; a coating layer formed on the substrate, and a chisel edge portion and a margin portion. An alternating laminate structure of a first composite nitride layer including a compound having a composition represented by the formula (Al1-xCrx)N, where x satisfies 0.10?x?0.60 and a second composite nitride layer including a compound having a composition represented by the formula (Ti1-ySiy)N, where, y satisfies 0.05?y?0.30 are in the chisel edge portion and the margin portion. An atomic ratio of the Cr element based on the total of the Al element and the Cr element in the first composite nitride layer is greater in the chisel edge portion than in the margin portion.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: March 10, 2020
    Assignee: TUNGALOY CORPORATION
    Inventor: Takao Katagiri
  • Patent number: 10561990
    Abstract: The invention relates to a combined method for gentle molecular surface functionalisation of the very thin, selectively-acting separating layer which preferably consists of aromatic polyamides, polyurethanes and/or polyureas, of thin-film composite membranes for reverse osmosis (hyperfiltration) and for nanofiltration, subsequently collectively termed water-filtration membranes, in order to achieve a passive antifouling effect without impairing the selectivity of the water-selective separating layer made of polyamides and the water-permeability of the membrane.
    Type: Grant
    Filed: August 12, 2015
    Date of Patent: February 18, 2020
    Assignees: Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V., IAB Ionenaustauscher GmbH
    Inventors: Uwe Spohn, Ulrike Hirsch, Marco Rühl, Nico Teuscher, Andreas Heilmann, Carsten Schellenberg
  • Patent number: 10526701
    Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: January 7, 2020
    Assignee: Lam Research Corporation
    Inventors: Purushottam Kumar, Adrien LaVoie, Hu Kang, Jun Qian, Tuan Nguyen, Ye Wang
  • Patent number: 10522738
    Abstract: An electronic device includes a semiconductor memory, wherein the semiconductor memory includes a variable resistance element formed over a substrate, and a multi-layer passivation layer positioned over sidewalls of the variable resistance element and having two or more insulating layers formed over the sidewalls of the variable resistance element.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: December 31, 2019
    Assignee: SK hynix Inc.
    Inventor: Ga-Young Ha
  • Patent number: 10512988
    Abstract: The present invention provides a coated solder material that is capable of preventing the advancement of oxidation of the surface during long-term storage and when melted, and that has excellent wetting extendability and bondability, without the occurrence of gaps in the bonded areas. A coating film is formed on the surface of a solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material; the thickness of the coating film is 4 nm to 200 nm, and when heated at 150° C. to 300° C. and melted, the mass-reduction rate is 60% or greater.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: December 24, 2019
    Assignee: SUMITOMO METAL MINING CO., LTD.
    Inventors: Hiroshi Kobayashi, Hidetoshi Yamabe, Kyoko Miyauchi
  • Patent number: 10504715
    Abstract: A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: December 10, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Hoyoung Kang
  • Patent number: 10480076
    Abstract: A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: November 19, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jai Hyuk Choi, Won Woong Park, Sung Hun Key, Min Soo Kim, Byeong Chun Lee, Suk Won Jung, Hyun Woo Joo, Myung Soo Huh
  • Patent number: 10478872
    Abstract: A method for treatment of a plastic transport box for conveyance and atmospheric storage of substrates including walls bounding a volume intended for storage of substrates, and a station for treatment of transport boxes for conveyance and atmospheric storage of substrates, the method including: at least one plasma treatment in which at least one interior wall of the transport box is subjected to a plasma of a treatment gas at a gas pressure lower than 10000 pascals.
    Type: Grant
    Filed: July 3, 2015
    Date of Patent: November 19, 2019
    Assignee: PFEIFFER VACUUM
    Inventors: Julien Palisson, Catherine Le Guet
  • Patent number: 10475986
    Abstract: A magnetoresistive device includes first and second ferromagnetic regions and an intermediate region formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate region at an interface between the intermediate region and at least one of the first and second ferromagnetic regions may be a plasma treated surface.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: November 12, 2019
    Assignee: EVERSPIN TECHNOLOGIES, INC.
    Inventor: Jijun Sun
  • Patent number: 10454029
    Abstract: Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100° C. Methods and apparatuses are suitable for forming conformal, dense, low wet etch rate silicon nitride films as encapsulation layers over chalcogenide materials for memory applications.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: October 22, 2019
    Assignee: Lam Research Corporation
    Inventors: Andrew John McKerrow, Dennis M. Hausmann
  • Patent number: 10453657
    Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: October 22, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Daping Yao, Hyman W. H. Lam, John C. Forster, Jiang Lu, Can Xu, Dien-Yeh Wu, Paul F. Ma, Mei Chang
  • Patent number: 10396601
    Abstract: A radio frequency power system is provided that includes bias modules, a switch, a matching network, and a control module. The bias modules are configured to generate respectively DC bias voltages. The switch is configured to (i) receive current from the bias modules, and (ii) control flow of the current from the bias modules to generate a radio frequency bias voltage signal. The matching network is configured to (i) receive the radio frequency bias voltage signal, and (ii) based on the radio frequency bias voltage signal, supply at least a portion of a radio frequency output voltage signal to an electrode of a substrate support in a processing chamber. The control module is connected to the switch and configured to control a state of the switch based on the radio frequency output voltage signal to shape a waveform of the radio frequency bias voltage signal.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: August 27, 2019
    Assignee: MKS Instruments, Inc.
    Inventors: Ky Luu, Aaron T. Radomski
  • Patent number: 10367080
    Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: July 30, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Fu Tang, Qi Xie, Jan Willem Maes, Xiaoqiang Jiang, Michael Eugene Givens
  • Patent number: 10358722
    Abstract: A face plate of a showerhead assembly of a deposition apparatus in which semiconductor substrates are processed includes gas holes arranged in an asymmetric pattern with a hole density which is substantially uniform or varies across the face plate. The face plate can include a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of a back plate such that an inner plenum is formed between the face plate and the back plate. The gas hole pattern in the face plate avoids symmetry which can cause defects on processed substrates.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: July 23, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: John Wiltse, Damien Slevin
  • Patent number: 10357090
    Abstract: A cooler including a container comprising a linear low-density polyethylene and a glow-in-the-dark additive, a lid comprising the linear low-density polyethylene and the glow-in-the-dark additive and coupleable to the container, each of the container and the lid including an insulation layer, and the glow-in-the-dark additive emitting light when exposed to an external electromagnetic radiation source. A method includes rotomolding a cooler comprising a linear low-density polyethylene polymer and a glow-in-the-dark additive. A method of using a cooler comprising a linear low-density polyethylene polymer and a glow-in-the-dark additive includes exposing the cooler to an external electromagnetic radiation source and removing the cooler from the source, and illuminating the surrounding area with the cooler.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: July 23, 2019
    Assignee: Gnarwhal Outdoors, LLC
    Inventor: Ryan Hunter Carden
  • Patent number: 10347488
    Abstract: Methods for forming a titanium-containing hard mask film on a substrate surface by exposing the substrate surface to a titanium-containing precursor. The titanium-containing hard mask comprises one or more of silicon, oxygen or carbon atoms and, optionally, nitrogen atoms.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: July 9, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Rui Cheng, Wei Tang, Pramit Manna, Abhijit Basu Mallick, Srinivas Gandikota
  • Patent number: 10316408
    Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: June 11, 2019
    Assignees: SilcoTek Corp., AIXTRON SE
    Inventors: David A. Smith, Min Yuan, James B. Mattzela, Olaf Martin Wurzinger, Dietmar Keiper, Anna Katharina Haab
  • Patent number: 10287678
    Abstract: A method and a device for coating may involve continuously supplying a precursor, in some cases at a constant precursor level, to a plurality of coating modules. As a result, a continuous coating operation is ensured. Moreover, one such method for supplying a precursor to a plurality of coating modules of a coating device may be employed where, for example, the coating modules have a pick-off device and a supply line, the supply line which may be configured as a riser at least in some regions. Precursor may be supplied by the supply line to the pick-off device of the coating module.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: May 14, 2019
    Assignees: ThyssenKrupp Steel Europe AG, ThyssenKrupp AG
    Inventors: Walter Mühlhause, Michael Strack
  • Patent number: 10242844
    Abstract: A plasma processing chamber includes a substrate support for receiving and holding a substrate. A window in the plasma processing chamber is oriented over the substrate support. A plurality of transformer coupled plasma coils is disposed over the window. The TCP coils are disposed radially equidistant from one another. Each TCP coil is connected to a power circuitry at one end and the opposite end is electrically grounded. The power circuitry includes an RF source and a phase-shift modulator. The RF source is used to apply RF power to the TCP coils at a generator frequency to generate RF electric field. The phase-shift modulator coupled to the RF source is configured to apply a modulation frequency that is phase-shifted to allow the RF electric field applied to each of the TCP coils to transition in a rotating pattern.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: March 26, 2019
    Assignee: Lam Research Corporation
    Inventors: Jon McChesney, Alex Paterson
  • Patent number: 10211099
    Abstract: The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: February 19, 2019
    Assignee: Lam Research Corporation
    Inventors: Deqi Wang, Gang Liu, Anand Chandrashekar, Tsung-Han Yang, John W. Griswold
  • Patent number: 10190217
    Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: January 29, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Minoru Honda, Toshio Nakanishi, Masashi Imanaka, Cheonsoo Han
  • Patent number: 10167545
    Abstract: An indium tin oxide film containing by weight about 90% In2O3 and about 10% SnO2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 1020/cm3 and a carrier mobility greater than 30 cm2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: January 1, 2019
    Assignee: Nanoco Technologies Ltd.
    Inventor: Stuart Stubbs
  • Patent number: 10167549
    Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: January 1, 2019
    Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Takeshi Nakamura, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
  • Patent number: 10155843
    Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: December 18, 2018
    Assignees: Massachusetts Institute of Technology, Luxembourg Institute of Science and Technology
    Inventors: Karen K. Gleason, Minghui Wang, Nicolas D. Boscher, Patrick Choquet
  • Patent number: 10086563
    Abstract: A method of producing a composite material includes preparing at least one molded product raw material by primary curing; preparing an assembled body by assembling the primarily cured molded product raw material with another molded product raw material; and integrally forming the molded product raw materials by heating the assembled body to a temperature equivalent to or higher than a glass transition point of the primarily cured molded product raw material to cause a phase of the at least one molded product raw material to transition to a rubberized state, by allowing an adhesive adjacent to the molded product raw material or the other molded product raw material adjacent to the molded product raw material to coexist with the molded product raw material in the rubberized state, and by secondarily curing the primarily cured at least one molded product raw material.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: October 2, 2018
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Hattori, Noriya Hayashi, Akihisa Watanabe
  • Patent number: 10053746
    Abstract: A method of repairing a worn carburized surface on a sprag clutch comprising the steps of: grinding the worn carburized surface of the sprag clutch to prepare the surface for metallurgical bonding; place the worn carburized surface in a PVD Cathodic Arc chamber; preheat the worn carburized surface to remove moisture and provide for a good metallurgical bonding surface; reverse sputter clean the surface to remove any surface oxide; apply a first coating layer using the PVD process to a maximum thickness; change the coating macro topology by polishing the coated surface; apply a second coating layer using the PVD process to a maximum thickness; and, grind or polish the coating to a desired dimension.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: August 21, 2018
    Assignee: FLORIDA TURBINE TECHNOLOGIES, INC.
    Inventors: Russell B Jones, Robert J. Wright
  • Patent number: 10002748
    Abstract: The present invention generally relates to a method for detecting the breakage of one or more grounding straps without stopping processing or opening the processing chamber for inspection. In one embodiment, a method for detecting grounding strap breakage in a processing chamber includes monitoring real-time RF related data from plasma generated in the processing chamber. The method also includes comparing the real-time RF related data with a pre-determined threshold RF related data. The method includes generating an alert if the real-time RF related data meets or exceeds the pre-determined threshold RF related data. In one embodiment, the RF related data includes RF frequency, direct current voltage, voltage peak-to-peak, and/or RF reflected power.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: June 19, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Ilias Iliopoulos, Shuo Na, Kelby Yancy, Chunsheng Chen
  • Patent number: 9972740
    Abstract: One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first passivation layer on a first side of a Si base layer of the photovoltaic structure using a static chemical vapor deposition process. The static chemical vapor deposition process can be performed inside a first reaction chamber. The system can then transfer the photovoltaic structure from the first reaction chamber to a second reaction chamber without the photovoltaic structure leaving a common vacuum space comprising both reaction chambers, and deposit a second passivation layer on the first passivation layer using an inline chemical vapor deposition process. The inline chemical vapor deposition process can be performed inside the second reaction chamber.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: May 15, 2018
    Assignee: TESLA, INC.
    Inventors: Yongkee Chae, Jianming Fu
  • Patent number: 9966569
    Abstract: An organic EL apparatus includes a substrate, an organic EL element that is disposed on the substrate, and a sealing layer that seals the organic light emission element by covering, and the sealing layer is a multilayer body which includes a first sealing layer, a buffer layer, and a second sealing layer respectively having different functions and being sequentially stacked from the organic EL element side. The second sealing layer is mainly made of silicon oxynitride, and includes an inner layer, an intermediate layer, and an outer layer being sequentially stacked on the organic EL element side. Stress of the intermediate layer is equal to or less than stress of the inner layer, and stress of the outer layer is greater than the stress of the inner layer.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: May 8, 2018
    Assignee: SEIKO EPSON CORPORATION
    Inventor: Hisatoshi Nakamura
  • Patent number: 9960072
    Abstract: A vertical adjustment assembly is disclosed in order to provide for matching vertical positions of two substrates within separate chambers or cavities of a reaction system for processing of semiconductor substrates. The vertical adjustment assembly, in cooperation with a main lift driver, can provide for a more accurate positioning of the substrates to account for a tolerance stack-up error.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: May 1, 2018
    Assignee: ASM IP Holding B.V.
    Inventor: Stephen Dale Coomer
  • Patent number: 9922854
    Abstract: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: March 20, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shinichi Kurita, Jozef Kudela, Suhail Anwar, John M. White, Dong-Kil Yim, Hans Georg Wolf, Dennis Zvalo, Makoto Inagawa, Ikuo Mori
  • Patent number: 9916993
    Abstract: The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: March 13, 2018
    Assignee: Lam Research Corporation
    Inventors: Ivan L. Berry, III, Thorsten Lill
  • Patent number: 9892909
    Abstract: A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: February 13, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Noriaki Fukiage, Takayuki Karakawa, Akihiro Kuribayashi, Jun Ogawa
  • Patent number: 9842726
    Abstract: A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: December 12, 2017
    Assignee: Verity Instruments, Inc.
    Inventors: Stephen Daniels, Shane Glynn, Felipe Soberon, Paul Maguire
  • Patent number: 9763345
    Abstract: Provided is a gas barrier laminate that can be produced inexpensively as compared with the case of using an inorganic film without requiring a complex production process, and exhibits an excellent gas barrier capability and excellent flexibility, and also provided are a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. A gas barrier laminate including a base and a gas barrier layer, the gas barrier layer being provided on the base, the gas barrier layer being obtained by implanting ions into an organosilicon compound thin film formed by a CVD method that utilizes an organosilicon compound as a deposition raw material, a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member are provided.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: September 12, 2017
    Assignee: LINTEC CORPORATION
    Inventor: Satoshi Naganawa
  • Patent number: 9741539
    Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: August 22, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Katsumasa Kawasaki, Justin Phi, Sergio Shoji
  • Patent number: 9741627
    Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: August 22, 2017
    Assignee: IAS, INC
    Inventors: Katsuhiko Kawabata, Takuma Hayashi, Mitsumasa Ikeuchi, Sungjae Lee, Jin Kunika
  • Patent number: 9694564
    Abstract: A heat-sealable polymer-based multilayer film for peelable packaging comprising a polymer-based core layer having an interior-facing side and an exterior-facing side; a peelable intermediate layer on the interior-facing side of the core layer, the peelable layer having an interior-facing side and a core-facing side, and the peelable layer containing a peeling agent; and an interior skin layer on the interior-facing side of the peelable layer; wherein the core layer is polypropylene-based and contains a propylene-ethylene copolymer to impart puncture-resistance to the multilayer film.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: July 4, 2017
    Assignee: Inteplast Group Corporation
    Inventors: Rafael E. Bayona P., Paul T. Alder, Gregory G. Gillis