Utilizing Plasma With Other Nonionizing Energy Sources Patents (Class 427/570)
  • Patent number: 10541118
    Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MCPR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: January 21, 2020
    Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY
    Inventors: Timothy A. Grotjohn, Jes Asmussen
  • Patent number: 10505185
    Abstract: A solid electrolyte including Li, Al, P, O, and N, wherein the solid electrolyte has a P2O7 structure.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: December 10, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Masaharu Hida, Satoru Watanabe, Tamotsu Yamamoto
  • Patent number: 10283330
    Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: May 7, 2019
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Felix Kozakevich, Michael C. Kellogg, John Patrick Holland, Zhigang Chen, Kenneth Lucchesi, Lin Zhao
  • Publication number: 20140363587
    Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.
    Type: Application
    Filed: December 21, 2012
    Publication date: December 11, 2014
    Applicant: JUSUNG ENGINEERING CO., LTD.
    Inventors: Song Whe Huh, Jeung Hoon Han
  • Patent number: 8859035
    Abstract: A method of enhancing the flowability of a powder. The powder is defined by a plurality of particles having an initial level of inter-particle forces between each particle. The method comprises: treating the powder, wherein the level of inter-particle forces between each particle is substantially decreased from the initial level; fluidizing the treated powder; flowing the treated powder into a plasma arc chamber; the plasma arc chamber generating a plasma arc; and the plasma arc chamber operating on the treated powder using the generated plasma arc. Preferably, the inter-particle forces are decreased by coating the particles with an organic surfactant.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: October 14, 2014
    Assignee: SDCmaterials, Inc.
    Inventor: David Leamon
  • Publication number: 20140272388
    Abstract: Composite coating materials comprising a hard carbide phase and a metallic binder that are resistant to molten metals such as aluminum are disclosed. The hard carbide phase of the composite coatings may comprise tungsten carbide, and the metallic binder may comprise a nickel-based alloy. A thin oxide layer comprising oxides of the binder metal may be provided on the surface of the composite coating. The composite coatings exhibit desirable non-wetting behavior when exposed to molten metals.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: KENNAMETAL INC.
    Inventors: Michael Knight, Cliff Garrigus, Hongbo Tian
  • Publication number: 20140255621
    Abstract: Production of bulk quantities of graphene for commercial ventures has proven difficult due to scalability issues in certain instances. Plasma-enhanced chemical vapor deposition of graphene can address at least some of these issues. Methods for production of graphene by plasma-enhanced chemical vapor deposition can include: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.
    Type: Application
    Filed: February 27, 2014
    Publication date: September 11, 2014
    Applicant: LOCKHEED MARTIN CORPORATION
    Inventors: Steven W. SINTON, Peter V. BEDWORTH
  • Patent number: 8828349
    Abstract: A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: September 9, 2014
    Assignees: Honda Motor Co., Ltd., Waseda University
    Inventors: Toshiyuki Ohashi, Toshio Tokune, Masahiro Ota, Hidefumi Nikawa, Hiroshi Kawarada, Takumi Ochiai
  • Publication number: 20140220261
    Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.
    Type: Application
    Filed: May 11, 2012
    Publication date: August 7, 2014
    Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY
    Inventors: Jes Asmussen, Yajun Gu, Timothy A. Grotjohn
  • Patent number: 8784948
    Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: July 22, 2014
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
  • Patent number: 8753723
    Abstract: A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: June 17, 2014
    Assignee: AGC Glass Europe
    Inventors: Eric Tixhon, Joseph Leclercq, Eric Michel
  • Patent number: 8753725
    Abstract: A method for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein and applying tension to said gas feed tube by affixing a spring to one end of said gas feed tube and said vacuum chamber. The method may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: June 17, 2014
    Assignee: Southwest Research Institute
    Inventors: Ronghua Wei, Richard L. Johnson, Christopher Rincon, Michael A. Miller
  • Publication number: 20140117120
    Abstract: An advanced coating for showerhead used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating formation involved a physical process, such as condensation of source material on the showerhead surface, and chemical process, wherein active species from plasma interact with the condensed source materials. Also, non-reactive species from the plasma impinge on the bottom surface to condense the formed coating.
    Type: Application
    Filed: October 28, 2013
    Publication date: May 1, 2014
    Applicant: Advanced Micro-Fabrication Equipment Inc, Shanghai
    Inventors: Xiaoming HE, Tuqiang Ni, Hanting ZHANG, Zhaoyang XU, Mingfang WANG, Lei WAN, Ping YANG
  • Publication number: 20140072727
    Abstract: The present invention provides a vapour deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapour, and co-depositing the component element vapours on a common substrate, wherein: the vapour of at least one component element is provided using a cracking source; the vapour of at least one other component element is provided using a plasma source; and at least one further component element vapour is provided; wherein the component elements react on the substrate to form the chemical compound.
    Type: Application
    Filed: July 20, 2012
    Publication date: March 13, 2014
    Applicants: TOYOTA MOTOR CORPORATION, ILIKA TECHNOLOGIES LTD.
    Inventors: Brian Elliott Hayden, Christopher Edward Lee, Duncan Clifford Alan Smith, Mark Stephen Beal, Xiaojuan Lu, Chihiro Yada
  • Patent number: 8658255
    Abstract: Methods of making components having calcium magnesium aluminosilicate (CMAS) mitigation capability involving providing a component; applying an environmental barrier coating to the component, the environmental barrier coating having a separate CMAS mitigation layer including a CMAS mitigation composition selected from rare earth elements, rare earth oxides, zirconia, hafnia partially or fully stabilized with alkaline earth or rare earth elements, zirconia partially or fully stabilized with alkaline earth or rare earth elements, magnesium oxide, cordierite, aluminum phosphate, magnesium silicate, and combinations thereof.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: February 25, 2014
    Assignee: General Electric Company
    Inventors: Glen Harold Kirby, Brett Allen Boutwell, Ming Fu, Bangalore Aswatha Nagaraj, Brian Thomas Hazel
  • Patent number: 8444870
    Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.
    Type: Grant
    Filed: May 23, 2009
    Date of Patent: May 21, 2013
    Assignee: Mattson Technology, Inc.
    Inventor: Valery Godyak
  • Patent number: 8414985
    Abstract: A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 9, 2013
    Assignee: LG Electronics, Inc.
    Inventors: Seyoun Moon, Wooyoung Kim, Sehwon Ahn, Dongjoo You
  • Patent number: 8404314
    Abstract: A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: March 26, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda
  • Patent number: 8394197
    Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: March 12, 2013
    Assignee: Sub-One Technology, Inc.
    Inventors: Andrew W. Tudhope, Thomas B. Casserly, Karthik Boinapally, Deepak Upadhyaya, William J. Boardman
  • Patent number: 8372491
    Abstract: The present invention relates to a method for treating plastic bottles comprising an operation for cold plasma sterilization with non-germicidal gasses and/or an operation for the cold plasma deposition of a diffusion barrier layer, said method being characterized in that said cold plasma delivers adjustable nonthermal energy to the entire inside surface of the bottle, said cold plasma being generated either through a distributed propagation of microwaves having a maximum intensity in the vicinity of said surface or by a hollow cathode system adapted to the bottle and supplied with pulsed DC and/or RF voltage. The invention also relates to the devices for implementing the method.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: February 12, 2013
    Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitations des Procedes Georges Claude
    Inventor: Jean-Christophe Rostaing
  • Publication number: 20130034669
    Abstract: A method of making a carrier for growing cells, including providing a polymer film; embossing a patterned surface one or more sides of the polymer film with an embossing roller; generating a pattern of structured indentations on the polymer film; and discretizing the patterned polymer film into a plurality of portions. The embossing pattern generates relief features on the carrier surface. An alternative method of making a carrier is also provided, including extruding a polymer film; embossing a patterned surface on the polymer film with a roller; generating a pattern of structured indentations on the polymer film; imparting a surface treatment to the film; and discretizing the treated polymer film into a plurality of portions.
    Type: Application
    Filed: November 2, 2011
    Publication date: February 7, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Yosang Yoon, Slawomir Rubinsztajn, Joel Matthew Caraher, Gary Stephen Balch, Prameela Susarla
  • Patent number: 8329261
    Abstract: A protective coating applied to the underwater portion of a marine vessel operable to inhibit the growth of marine foulants. The coating comprises a polymer, a marine biocide, a preservative, and optionally an antimicrobial agent. In certain embodiments, the marine biocide, preservative, and optional antimicrobial agent are chemically bonded with the polymer thereby significantly reducing the ability of the biocide, preservative, and antimicrobial agent to leach from the coating into the surrounding environment.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: December 11, 2012
    Inventor: Larry Weidman
  • Patent number: 8313805
    Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: November 20, 2012
    Assignee: Lam Research Corporation
    Inventors: Babak Kadkhodayan, Rajinder Dhindsa, Anthony de la Llera, Michael C. Kellogg
  • Patent number: 8304030
    Abstract: A bi-laterally surfaced substrate in which the first surface consists of one or more than one of cerium oxide, aluminum oxide, tin oxide manganese oxide, copper oxide, cobalt oxide, nickel oxide, praseodymium oxide, terbium oxide, ruthenium, rhodium, palladium, silver, iridium, platinum and gold and the second surface consists of one or more than one of ruthenium, rhodium, palladium, silver, iridium, platinum and gold and micro channel micro component reactors including such substrates in a predetermined formed shape and methods for making the same utilizing a thermal spray on one side and a physical deposition process on the other side.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: November 6, 2012
    Assignee: Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Ting He, Eisuke Kimura, Tadashi Nomura
  • Publication number: 20120230908
    Abstract: A substrate for growing carbon nanotubes capable of elongating single-walled carbon nanotubes of an average diameter of less than 2 nm is provided. The substrate for growing carbon nanotubes 1 is equipped with a reaction prevention layer 3 formed on a base material 2, a catalyst material layer 4 formed on the reaction prevention layer 3, a dispersion layer 5 formed on the catalyst material layer 4, and a dispersion promotion layer 6 formed on the dispersion layer 5.
    Type: Application
    Filed: March 7, 2012
    Publication date: September 13, 2012
    Applicants: WASEDA UNIVERSITY, HONDA MOTOR CO., LTD.
    Inventors: Toshiyuki OHASHI, Toshio TOKUNE, Masahiro OTA, Hidefumi NIKAWA, Hiroshi KAWARADA, Takumi OCHIAI
  • Patent number: 8263178
    Abstract: A process for the in-flight surface treatment of powders using a Dielectric Barrier Discharge Torch operating at atmospheric pressures or soft vacuum conditions is described herein. The process comprising feeding a powder material into the Dielectric Barrier Discharge Torch yielding powder particles exhibiting a reduced powder agglomeration feature; in-flight modifying the surface properties of the particles; and collecting coated powder particles. An apparatus for surface treating micro- and nanoparticles comprising a Dielectric Barrier Discharge Torch operating at atmospheric pressure or soft vacuum conditions is also described herein.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: September 11, 2012
    Assignee: Tekna Plasma Systems Inc.
    Inventors: Maher I. Boulos, Ulrich Kogelschatz, Christine Nessim
  • Patent number: 8252388
    Abstract: A method of performing plasma immersion ion processing (PIIP), particularly suited for processing three-dimensional objects. One or more such objects are placed in a conductive cage having solid or mesh walls. The cage completely encloses the objects. A voltage is applied to the cage, and the plasma is generated, resulting in the plasma being contained within the cage.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: August 28, 2012
    Assignee: Southwest Research Institute
    Inventors: Ronghua Wei, Chris Rincon, Edward Langa
  • Publication number: 20120196051
    Abstract: A deposition apparatus includes a deposition chamber and a deposition material source. An electron beam source is positioned to direct a first electron beam to vaporize a portion of the deposition material. A first electrode is provided for generating a primary plasma from the deposition material source. A second electrode is provided for generating a secondary plasma and further accelerating ions from the primary plasma. A bias electric potential is applied to the workpiece to draw ions from the secondary plasma to the workpiece. A control system may be coupled to the electron beam source, the bias voltage source, and power supplies for the first and second electrodes.
    Type: Application
    Filed: January 28, 2011
    Publication date: August 2, 2012
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: Anatoly Kuzmichev, Igor V. Belousov, Yuriy G. Kononenko, John F. Mullooly
  • Patent number: 8192806
    Abstract: A plasma-enhanced chemical vapor deposition (PECVD) process including plasma particle extraction is described. Charged particles suspended in discharge volume are moved together with a plasma and can then be flushed away. The particle extraction process reduces unwanted particles on the wafer after deposition and reduces total process time. In some embodiments, the process can involve powering an electrode in the process chamber located away from the wafer. This electrode can be powered up as the main deposition electrode is powered down.
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: June 5, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Sesha Varadarajan, Edward Augustyniak, Jeffrey Benzing
  • Publication number: 20120122018
    Abstract: The present invention provides a fuel cell separator and a method for surface treatment of the same, in which ionized nanoparticles are attached to the surface of a separator to form fine projections such that the surface of the separator exhibits superhydrophobicity. For this purpose, the present invention provides a method for surface treatment of a fuel cell separator which provides nanoparticles for forming fine projections on the surface of the separator to a discharge electrode and ionizes the nanoparticles by an arc discharge generated in the discharge electrode. The ionized nanoparticles are then attached to the surface of the separator by an electric field generated by applying a high voltage between the separator and the discharge electrode, thereby forming fine projections for imparting superhydrophobicity.
    Type: Application
    Filed: May 12, 2011
    Publication date: May 17, 2012
    Applicants: KIA MOTORS CORPORATION, HYUNDAI MOTOR COMPANY
    Inventors: Haeng Jin Ko, Sae Hoon Kim, Yoo Chang Yang, Yun Seok Kim
  • Patent number: 8163356
    Abstract: A laboratory consumable having a polymeric coating, coating formed by exposing said consumable to pulsed plasma for a sufficient period of time to allow a polymeric layer to form on the surface of the laboratory consumable, said plasma comprising a compound of formula (I) where R1, R2, R3 and R4 are as defined in the specification. Consumables of this type show significantly reduced liquid sample retention, maximum sample recovery and ultra non-binding properties, as well as oil and water-repellency.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: April 24, 2012
    Assignee: P2i Ltd
    Inventor: Stephen Coulson
  • Patent number: 8158211
    Abstract: A method for manufacturing an anti-reflection structure is provided. The method includes the following steps: First, a to-be-treated object is provided in a reactive area. Next, a plasma source is provided in the reactive area. Then, the plasma source is ionized to form plasma in atmospheric pressure. Next, the surface of the to-be-treated object is treated by plasma so as to form a plurality of micro-protuberances on the surface of the to-be-treated object.
    Type: Grant
    Filed: December 24, 2008
    Date of Patent: April 17, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Wei Chen, Chin-Jyi Wu, Wen-Tzong Hsieh, Wen-Tung Hsu, Chun-Hung Lin
  • Patent number: 8105660
    Abstract: A method of forming a diamond-like carbon coating by plasma enhanced chemical vapor deposition on an internal surface of a hollow component having an inner surface. A reduced atmospheric pressure is created within a pipe or other hollow component to be treated. A diamondoid precursor gas is introduced to the interior of the component. A bias voltage is established between a first electrode and one or more second electrodes. The first electrode is or is attached to the component. The second electrode is externally offset from an opening of the component, by a hollow insulator. A plasma region is established adjacent an inner surface of the component and extends through the hollow insulator. The precursor gas comprises at least one diamondoid. The pressure and bias voltage are selected such as to cause the deposition of diamond-like carbon on the inner surface.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: January 31, 2012
    Inventors: Andrew W Tudhope, William J Boardman, Steven F Sciamanna, Thomas B Casserly, Robert M Carlson
  • Patent number: 8053372
    Abstract: The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The deposition enhancement is derived from ions generated in a plasma. The techniques described reduce the time required for plasma stabilization, thereby reducing deposition time and improving efficiency.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: November 8, 2011
    Assignee: Novellus Systems, Inc.
    Inventors: Frank Greer, Karl Leeser
  • Publication number: 20110256347
    Abstract: The invention relates to a method for depositing a diamond coating onto a substrate, said method resulting in the production of a coating characterised by a novel morphology of the diamond in the form of pyramids containing submicronic grains. The method is carried out by chemical vapour deposition by controlling the applied electric field.
    Type: Application
    Filed: December 17, 2009
    Publication date: October 20, 2011
    Inventors: Jean-Pierre Manuad, Angéline Poulon, Lionel Teule-Gay, Cyril Faure
  • Publication number: 20110253674
    Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.
    Type: Application
    Filed: September 29, 2008
    Publication date: October 20, 2011
    Applicants: New Optics, Ltd., Korea Electrotechnology Research Institute
    Inventors: Sung Il Chung, S.A. Nikiforov, Hyeon Seok Oh, Pan Kyeom Kim, Hyeon Taeg Gim, Jeong Woo Jeon
  • Patent number: 8029875
    Abstract: The present disclosure relates to a method for plasma ion deposition and coating formation. A vacuum chamber may be supplied, wherein the vacuum chamber is formed by a hollow substrate having a length, diameter and interior surface. A plasma may be formed within the chamber while applying a negative bias to the hollow substrate to draw ions from the plasma to the interior surface of the hollow substrate to deposit ions onto the interior surface and forming a coating. The coating may have a Vickers Hardness Number (Hv) of at least 500.
    Type: Grant
    Filed: May 23, 2007
    Date of Patent: October 4, 2011
    Assignee: Southwest Research Institute
    Inventors: Ronghua Wei, Christopher Rincon, James H. Arps
  • Publication number: 20110223355
    Abstract: A coating system includes a work piece, a coating delivery apparatus configured to apply a coating material to the work piece in a plasma-based vapor stream, and a first electron gun configured to direct a first electron beam at the plasma-based vapor stream for adding thermal energy to the coating material in the plasma-based vapor stream.
    Type: Application
    Filed: March 12, 2010
    Publication date: September 15, 2011
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: Peter F. Gero, Kevin W. Schlichting, James W. Neal
  • Publication number: 20110223356
    Abstract: An apparatus includes a work piece support for holding and selectively rotating a work piece, a coating delivery apparatus configured to apply a coating material to the work piece, a susceptor positioned adjacent to the work piece support, and a first electron gun configured to direct a first electron beam at the susceptor such that the susceptor radiates heat toward the work piece.
    Type: Application
    Filed: March 12, 2010
    Publication date: September 15, 2011
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: Peter F. Gero, Kevin W. Schlichting, James W. Neal
  • Publication number: 20110223357
    Abstract: A surface treatment method, which is capable of continuously and efficiently performing high quality surface treatment that can improve adhesion between a substrate and a functional layer by preventing oligomers from oozing out onto the substrate surface with the passage of time from surface treatment when performing surface treatment on the surface of a polyester substrate using an atmospheric-pressure plasma treatment, is provided. The method comprises an atmospheric-pressure plasma step for treating the surface of the substrate by atmospheric-pressure plasma, and a heating step for heating the surface of the substrate to a temperature exceeding the glass transition temperature Tg before the atmospheric-pressure plasma treatment step.
    Type: Application
    Filed: March 14, 2011
    Publication date: September 15, 2011
    Applicant: FUJIFILM CORPORATION
    Inventor: Kenichi UMEMORI
  • Publication number: 20110174778
    Abstract: A plasma processing apparatus performs a process on a substrate by using plasma. The plasma processing apparatus includes a processing chamber; a mounting table which is located in the processing chamber and on which a substrate is mounted; a gas shower head formed of a conductive material provided to face the mounting table and having at the bottom surface thereof a plurality of gas injection openings for supplying a processing gas into the processing chamber; an induction coil to which a high frequency current is supplied to generate an inductively coupled plasma in a region surrounding a space below the gas shower head; a negative voltage supplying unit for applying a negative DC voltage to the gas shower head to allow an electrical field, which is induced by the induction coil, to be drawn to a central portion of the processing region; and a unit for evacuating the processing chamber.
    Type: Application
    Filed: July 7, 2009
    Publication date: July 21, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ikuo Sawada, Songyun Kang, Shigeru Kasai
  • Publication number: 20110104363
    Abstract: An object is to provide a plasma processing apparatus and a method for controlling a substrate attraction force in a plasma processing apparatus by which the substrate attraction force is controlled to be constant without being influenced by the number of processed substrates.
    Type: Application
    Filed: March 9, 2009
    Publication date: May 5, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Ryuichi Matsuda, Akihiko Matsukura
  • Publication number: 20110045238
    Abstract: The printing template (2) of an SMT process includes a metallic template body (2a) with clearances (3) corresponding to a desired printing structure. A printing material is to be applied through these clearances (3) to a plate that is to be joined onto the printing template from below. To prevent the printing material from adhering in the region of the clearances (3), the metallic template body (2a) is to be provided with a thin coating (6) of a metal-alkoxide coating material, the surface energy of which is reduced by chemical bonding of at least one organic component. The coating may be performed in particular by means of a sol-gel process.
    Type: Application
    Filed: August 25, 2006
    Publication date: February 24, 2011
    Inventors: Heinrich Zeininger, Rudolf Zrenner
  • Patent number: 7871679
    Abstract: The invention relates to a coating comprising a getter metal alloy and to an arrangement and method for the production thereof. The coating therein consists of a non-vaporizing getter metal alloy (2) for an inner wall (3) of a high-vacuum vessel (4). The arrangement basically consists of a metal plasma generator (7), which in turn comprises an insulator member (8), which carries an ignition electrode (9) and a cathode wire (10) comprising a getter metal alloy (2). Those three components are surrounded by a cage-like anode member (13), which together with the insulation member (8) projects into the high vacuum vessel (5) to be coated and is supplied with cathode potential (12), high-voltage ignition pulse (19) and anode potential (14) by a voltage supply device (16), the anode member (13) together with the high-vacuum vessel (4) being held at ground potential.
    Type: Grant
    Filed: February 27, 2003
    Date of Patent: January 18, 2011
    Assignee: Gesellschaft fuer Schwerionenforschung mbH
    Inventor: Hartmut Reich-Sprenger
  • Publication number: 20100310790
    Abstract: A method of forming a carbon-containing layer is provided. First, a substrate having a target layer thereon is provided. Next, a plasma containing CxHyFz is generated. Thereafter, a plasma deposition process is performed to the substrate by using the plasma containing CxHyFz so as to form the carbon-containing layer on the target layer.
    Type: Application
    Filed: June 9, 2009
    Publication date: December 9, 2010
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventors: Shuo-Che Chang, Shin-Yu Nieh
  • Patent number: 7824600
    Abstract: The invention relates to a method for raising the surface tension of biaxially-stretched films made of thermoplastic polymers. According to the method, a film is first treated on a surface by means of an atmospheric pressure plasma before being stretched transversally or simultaneously across the width thereof, and the film is additional a subjected to a second treatment by means of a corona or flame after being stretched transversally or simultaneously, the second treatment being done on the same surface which has already been plasma-treated.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: November 2, 2010
    Assignee: Treofan Germany GmbH & Co. KG
    Inventors: Joachim Jung, Thomas Gottfreund
  • Patent number: 7811641
    Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: October 12, 2010
    Assignee: Industry Academic Cooperation Foundation of Kyunghee University
    Inventors: Jin Jang, Kyu-Chang Park, Sung-Hoon Lim
  • Publication number: 20100189923
    Abstract: A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of ?300 MPa to 300 MPa.
    Type: Application
    Filed: January 29, 2009
    Publication date: July 29, 2010
    Applicant: ASM JAPAN K.K.
    Inventor: Kamal Kishore Goundar
  • Publication number: 20100159154
    Abstract: A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.
    Type: Application
    Filed: December 22, 2008
    Publication date: June 24, 2010
    Inventors: Amanda Baer, Wen-Chien David Hsiao, John I. Kim, Vladimir Nikitin, Trevor W. Olson, John Bruce Piggott, JR., Yuan Yao
  • Patent number: 7700164
    Abstract: In an apparatus for fabricating a carbon coating, an object such as a magnetic recording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.
    Type: Grant
    Filed: November 2, 2004
    Date of Patent: April 20, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Shunpei Yamazaki, Kenji Itoh, Shigenori Hayashi