Abstract: In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.

Abstract: Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.

Abstract: There is provided a device for generating a heavy-ion beam. The device includes a laser beam generating unit configured to generate a laser beam; a target configured to generate a heavy-ion beam by the laser beam; a laser optical system configured to focus the laser beam on the front of the target; and a plasma treating unit disposed at a rear surface of the target and configured to remove impurities within the target by plasma surface treatment that is performed by radiating cationic plasma onto the rear surface of the target.

Abstract: The disclosed Plasma Chemical Vapor Deposition (PCVD) process uses the injection of plasma-reactive gas to control deposition oscillation and refractive-index oscillation (e.g., alpha oscillation). This PCVD process, which may employ a modified PCVD apparatus, achieves more uniform glass deposition. This, in turn, results in optical preforms and optical fibers having more uniform optical properties.

Abstract: An isothermal, low pressure-based process of depositing material within a substrate has been developed and results in creating an extremely narrow reaction zone within which a more uniform and efficient deposition will occur. Sets of isothermal plasma operating conditions have been found that create a narrow deposition zone, assuring that the deposited material is clear glass rather than soot particles. The chemical delivery system, in one arrangement, utilizes rods of solid phase source material (which may otherwise be difficult to obtain in gaseous form). The operating conditions are selected such that the hot plasma does not transfer a substantial amount of heat to the substrate tube, where the presence of such heat has been found to result in vaporizing the reactant material (creating soot) and developing hot spots.

Abstract: Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna (6) provided in a depressurized treatment chamber (2), and substrates (9, 15) provided with a reaction prevention layer and a catalyst material layer which are formed on a base material are held at a distance, to which a radical can reach and an attack of an ion generated as a by-product of the radical can be avoided, from a plasma generation area (7). The tip (6a) of the antenna (6) can be controlled so as to match with the position of the anti-node of a stationary wave (27) of microwaves.

Abstract: A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).

Abstract: In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.

Abstract: A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The method of manufacturing a thin film includes introducing a process gas in a reaction chamber of a plasma deposition device, the reaction chamber including a first electrode and a second electrode. The method further includes applying, by a first power supply unit, a first pulsed RF signal to one of the first and second electrodes, and applying, by a second power supply unit, a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are applied based on a predetermined deposition variable.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: An apparatus includes a work piece support for holding and selectively rotating a work piece, a coating delivery apparatus configured to apply a coating material to the work piece, a susceptor positioned adjacent to the work piece support, and a first electron gun configured to direct a first electron beam at the susceptor such that the susceptor radiates heat toward the work piece.

Abstract: An isothermal, low pressure-based process of depositing material within a substrate has been developed, and is particularly useful in forming an optical fiber preform results in creating an extremely narrow reaction zone within which a more uniform and efficient deposition will occur. Sets of isothermal plasma operating conditions have been found that create a narrow deposition zone, assuring that the deposited material is clear glass rather than soot particles. The exhaust end of the tube is connected to a vacuum system which is in turn connected to a scrubber apparatus for removal and neutralization of reaction by-products. The operating conditions are selected such that the hot plasma does not transfer a substantial amount of heat to the substrate tube, where the presence of such heat has been found to result in vaporizing the reactant material (creating soot) and developing hot spots.

Abstract: A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

Abstract: A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.

Abstract: The present invention relates to wear-resistant mechanical parts.

Abstract: The present disclosure relates to methods and systems that provide heat, via at least Photon-Electron resonance, also known as excitation, of at least a particle utilized, at least in part, to initiate and/or drive at least one catalytic chemical reaction. In some implementations, the particles are structures or metallic structures, such as nanostructures. The one or more metallic structures are heated at least as a result of interaction of incident electromagnetic radiation, having particular frequencies and/or frequency ranges, with delocalized surface electrons of the one or more particles. This provides a control of catalytic chemical reactions, via spatial and temporal control of generated heat, on the scale of nanometers as well as a method by which catalytic chemical reaction temperatures are provided.

Abstract: The present invention relates to a method of preparing wear-resistant metallic surfaces.

Abstract: A dispensing apparatus for dispensing adhesive includes an adhesive source and a dispensing member. The dispensing member is movably attached to the adhesive source. A dispensing nozzle is located on the dispensing member to dispense adhesive onto a component. A heating element is also located on the dispensing member to heat the component. Finally, a roller element is located on the dispensing member to apply pressure to the adhesive.

Abstract: Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power PC, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700° C. and 1000 ° C.

Abstract: A method for deposition of titania, and titania-containing, thin films by CVD, using an atmospheric pressure glow discharge plasma as a major source of reaction, which leads to film properties, and film growth rates, normally only achievable (by atmospheric pressure CVD) with significantly higher substrate temperatures.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A system for coating a substrate includes a heater that heats the substrate. The heater includes a two-dimensional array of a plurality of heat sources which supply heat to the substrate when the substrate is in the presence of the array of heat sources. The heater further includes a controller that controls the operation of each heat source to heat a localized area of the surface of the substrate according to a predetermined temperature profile for the substrate.

Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.

Abstract: A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of the deposition chamber and facing the substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10?3 mbars, in the magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate. The substrate surface includes raised and/or lowered reliefs. The invention concerns the SWNTs thus obtained.

Abstract: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

Abstract: A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.

Abstract: A process makes at least one nanotube between two electrically conducting elements located on a substrate, using, inside a deposition chamber, a microwave power, a magnetic field, and at least one electronic cyclotron resonance zone faciliting ionization and/or dissociation of a gas containing carbon injected into the deposition chamber at a low pressure inside the deposition chamber, causing ionization and/or dissociation of this gas in each electronic cyclotron resonance zone. The ions and electrons produced are located along the field lines of the magnetic field set up in the deposition chamber. The process also includes a screening operation of the various species produced in each electronic cyclotron resonance zone to enable exclusive access of CxHy°non condensable free radicals produced to access a deposition zone adjacent to at least one part of the substrate including the two electrically conducting elements to make the nanotube.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

Abstract: Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic chuck with a dielectric layer, such as SiO2, after every chamber cleaning process. The uniform and tightly bonded dielectric layer deposited on the electrostatic chuck eliminates the need for a cover wafer over the chuck surface during the chamber cleaning and provides for more reliable gripping of wafers.

Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

Abstract: An HSG-Si layer is formed on a wafer under a uniform temperature condition. An apparatus for forming the HSG-Si layer includes a housing forming a process chamber, a first heater on which the wafer is positioned fixed in place at the bottom of the process chamber, a second heater at the top of the process chamber, and a thermal insulator which prevents the heat generated by the first heater from being transferred to the outside of the process chamber. A temperature control system regulates the temperature of the heaters. A method of forming the HSG layer includes steps of placing the wafer on the first heater, using the heaters to remove moisture from the wafer, injecting a source gas of the HSG-Si toward the upper surface of the wafer to form amorphous silicon on the wafer, and annealing the wafer for a predetermined period of time to transform the amorphous silicon into an HSG-Si layer.

Abstract: A silicon oxide film has a ratio of A1 to A2 which is not higher than 0.21, where A1 is a first peak integrated intensity of a first peak belonging to Si—OH and appearing in the vicinity of a wave-number of 970 cm−1, and A2 is a second peak integrated intensity of a second peak belonging to O—Si—O and appearing in the vicinity of a wave-number 820 cm−1, and each of the first and second peak integrated intensities is defined as a product of peak width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that a ratio of a first flow rate Fo of oxygen gas to a second flow rate Fsi of a silicon source gas is not lower than 20.

Abstract: A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

Abstract: A method of placing a ceramic coating on an article of manufacture comprising a substrate formed of a nickel or cobalt-based superalloy, which includes the steps of placing a bonding layer on the substrate and placing an anchoring layer, which is chemically different from the bonding layer and comprises a nitride compound, on the bonding layer. The method further includes the step of placing the ceramic coating on the anchoring layer.

Abstract: Process and device for depositing, by electron cyclotron resonance plasma, a web of carbon nanofibres or nanotubes, on a substrate without a catalyst, by injection of a microwave power into a deposition chamber including a magnetic structure with a highly unbalanced magnetic mirror and at least one electron cyclotron resonance zone within the interior of the deposition chamber itself and opposite the substrate. Under a pressure of less than 10−4 mbar, ionization and/or dissociation of a gas containing carbon is induced in the magnetic mirror in the center of the deposition chamber, thus producing species that deposit on the substrate, which is heated.

Abstract: A method and arrangement for producing a boride layer on a surface by plasma boronizing includes supplying a gas mixture containing a boron-releasing gas to a reactor and generating a glow discharge in the reactor using a pulsed DC voltage. The parameters of the production of the plasma produced by the glow discharge in a treatment chamber of the reactor are selected so that an increased quantity of excited boron particles is generated in the plasma to produce non-porous boride layers, for example, for boride coating of components which need a surface that is highly resistant to wear, for example, gears, camshafts and the like. Parameters with which the production of the boride layer can be controlled are, for example, voltage, pulse-duty factor, frequency, temperature, treatment chamber pressure during the production of the plasma, and the content of boron-releasing gas and of the remaining components in the gas mixture which is fed to the reactor.

Abstract: A thin film depositing method comprising placing a substrate in a heating chamber; allowing a first gas to flow inside the heating chamber to heat the substrate through heat exchange with the first gas; moving the substrate to a deposition chamber, evacuating the deposition chamber, and then supplying a second gas into the deposition chamber; and causing an electrical discharge in the second gas such that the second gas decomposes into decomposition components and the decomposition components adhere to a substrate surface to deposit a film thereon, wherein the first gas is a gas from which moisture and organic substances have been removed. The time required for depositing thin films is reduced thereby improving the throughput, increases in apparatus costs are suppressed, and a thin film having good properties is obtained. A thin film depositing apparatus is also provided.

Abstract: An integrated nucleation and bulk deposition process is disclosed for forming a CVD metal film over a semiconductor substrate that has structures formed thereon. In the integrated deposition process of the present invention, nucleation seed deposition and bulk deposition are performed in an integrated and contemporaneous manner. In one embodiment, a reactant gas and a reducing agent gas flow into a pressurized reaction chamber. As the integrated deposition process progresses, pressure and flow of reactant gas are increased while flow of reducing agent gas is decreased. The integrated deposition process of the present invention gives a significant decrease in process time as compared to prior art processes. Moreover, the integrated deposition process of the present invention gives good fill characteristics while providing sufficient protection to underlying structures.

Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.

Abstract: A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

Abstract: An electron-emitting source includes a substrate and a coating film. The substrate is made of a material containing a metal serving as a growth nucleus for nanotube fibers as a main component, and has a plurality of through holes. The coating film is constituted by nanotube fibers formed on a surface of the substrate and wall surfaces of the through holes. A method of manufacturing an electron-emitting source is also disclosed.

Abstract: In a thin-film deposition method, a substrate is placed in a heat chamber having a pressure equal to or higher than an atmospheric pressure, and the substrate is heated in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection. The heated substrate is transferred from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween. Then, a thin-film deposition is carried out on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.

Abstract: A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma.

Abstract: In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Abstract: A method of coating a surface with a polymer layer, which method comprises exposing said surface to a plasma comprising a monomeric unsaturated organic compound which comprises a chain of carbon atoms, which are optionally substituted by halogen; provided that where the compound is a perhalogenated alkene, it has a chain of at least 5 carbon atoms; so as to form an oil or water repellent coating on said substrate.