Abstract: A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means.

Abstract: A method of vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

Abstract: A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

Abstract: Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Abstract: Proposed is an improvement in the process for forming a superhard carbonaceous coating film on various articles by the plasma-induced CVD method using an apparatus in which microwaves generated in an oscillator are introduced into the CVD chamber through a waveguide duct partitioned from the CVD chamber by a gas shield.

Abstract: An aluminum body having diamond bonded thereto with a diffused interlayer of silicon is described.

Abstract: A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

Abstract: A method is provided for forming thin films, such as high temperature superconductors, on a surface of a substrate using pulsed microwaves to control substrate temperature. The method includes vaporizing a liquid source to form a series of vapor pulses, irradiating the vapor pulses and a makeup gas with pulsed microwaves, and exposing the surface of the substrate to the irradiated mixture to form a thin film on the surface. The microwaves may be pulsed to coincide with the arrival of the vapor pulses at the substrate, thus reducing the amount of material consumed and the amount of waste. Further, the plasma may be closely confined to the substrate with a dielectric waveguide to reduce the power required for irradiating the mixture and to prevent the formation of stray deposits on surfaces enclosing the substrate.

Abstract: An apparatus for controlling an oscillation output of a magnetron includes a switch circuit controlled of ON/OFF states thereof by a pulse signal, a rectifying circuit for supplying microwave power pulses to the magnetron, and a transformer having a primary side and a secondary side. The primary side has a first terminal and a second terminal, where the first terminal is connected to an A.C. power supply, the second terminal is connected to the switch circuit. The secondary side is connected to the rectifying circuit. The switch circuit is turned ON/OFF by the pulse signal so that a duty factor of the microwave power pulses output from the rectifying circuit and a repetition frequency of the duty cycle thereof become constant.

Abstract: A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: Carbon fluoride solid compositions having a low fluorine-to-carbon ratio are produced by chemical vapor deposition processes. These carbon fluoride compositions have improved wettability characteristics over polytetrafluoroethylene. These compositions can be used as films, coatings on substrates, powders, and stand-alone articles. These carbon fluoride compositions are produced by energizing vapors comprised of compounds containing fluorine and carbon to cause them to degrade into fragments which are then condensed onto a substrate to form the carbon fluoride solids. These vapors can be energized by a variety of techniques, including hot filament techniques. The carbon fluoride solids find utility as films in aircraft de-icing, cookware, appliances, surgical tooling, chemical processing, gaskets, seals, diaphragms, packings, valve seats, windings, mold release components, extruder coatings, medical prosthetics, and other similar non-wetting applications.

Abstract: A continuous dry coating method and an apparatus therefor which are capable of removing cut chips and burrs from and smoothing inner walls of small-diameter holes in a substrate material and, then, successively performing a cold coating on these small holes in a short period of time. The continuous dry process coating method comprises the steps of: arranging electrodes on opposite sides of a substrate material; performing a plasma discharge to surface-treat small holes made in the substrate material; and then performing an electron cyclotron resonance plasma (ECR plasma) coating on the surfaces of these holes.

Abstract: A process for forming a coating on a surface of a textile fiber, comprising subjecting the fiber surface to first and second process phases while passing the fiber through a reaction medium comprising a cold flowing plasma containing an active species, the first phase including treating the fiber surface in order to increase its adhesive properties, and the second phase including introducing a polymerizable material comprising at least one of a prepolymer and a monomer into the cold flowing plasma in the presence of the fiber under conditions sufficient to induce the formation of a polymerized coating on the fiber surface, polymerization being induced by the active species.

Abstract: A method for depositing diamond film on a substrate utilizing a tuneable microwave cavity with an adjustable height and antenna and an electrically insulated chamber comprises the steps of decreasing the pressure within the chamber, creating a plasma including hydrogen gas within the chamber, tuning the cavity by varying its height and the depth of insertion of the antenna to minimize reflected power and properly position the plasma on the substrate, injecting a hydrocarbon gas into the chamber, and maintaining the plasma for a sufficient time for diamond film of the desired thickness to be deposited.

Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons with a specimen being treated. The microwave power is distributed uniformly around the circumference of the chamber by applicators formed by one or more pairs of annular sectors, each of which comprises a slotted wave guide antenna, and coupled to an external source of microwave power by a hybrid coupler. A magnetic field free region produces uniformity of plasma distribution in a plasma stream approaching the outlet. The above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the specimen.

Abstract: Silicone hydride (Si--H) can be produced on the surface of silicone rubbers by plasma treatment of silicone rubber in the presence of hydrogen or an inert gas such as nitrogen, helium, neon or argon in a plasma chamber which is substantially free of oxygen and oxygen-producing compounds. The silicone hydride can then be used as a grafting site for the covalent attachment for many substances, including bioactive molecules.

Abstract: A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

Abstract: In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is excited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporarily after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before the next film-forming operation is restarted.

Abstract: A swirl flow microwave plasma torch is provided for the growth of diamond films. The swirl flow torch incorporates an injection nozzle that directs reactant gases into a cylindrical flow tube extending through the center of a tuned microwave cavity. The outer surface of the nozzle comprises a contoured, conical shape that causes inert gas, directed tangentially against the outer surface of the nozzle, to swift in a helical path that surrounds and confines the reactant gas emerging from the nozzle. The tuned cavity is coupled to a microwave energy source to generate a highly localized plasma in the reactant gas in the center of the sheathing swirl of inert gas. The swirl of inert gas contains the plasma in a well-defined shape, prevents in-diffusion of undesirable gases, forms a boundary layer to prevent plasma migration, and provides flow tube cooling. The reactant gas flow forces the plasma out of the flow tube to form a plasma flame that can be impinged on a substrate to induce diamond growth.

Abstract: Efficiency of low pressure gas plasma processes is increased by addition of small quantities of water vapor to the primary gas constituting the plasma. Treated fabrics and polymer films show decreased wetting angle and increased capillary absorption, which beneficially affects the material's susceptibility to dyeing and impregnation.

Abstract: There is provided a microwave plasma chemical vapor deposition process for forming a functional deposited film on a surface of a substrate by means of microwave plasma chemical vapor deposition conducted in a substantially enclosed film-forming chamber, said film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a substantially cylindrical discharge space encircled by said substrate surface, said substrate being supported by substrate working means, said film-forming chamber being provided with means for evacuating said film-forming chamber, comprising: (a) longitudinally providing a gas feed pipe provided with a plurality of gas liberation holes at the center position of said discharge space; (b) radiately supplying against said surface of substrate a raw material gas through said plurality of gas liberation holes o

Abstract: Apparatus and methods for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials.

Abstract: High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

Abstract: A plasma CVD method for forming a carbonaceous material containing diamond or microcrystalline grains therein is disclosed, which comprises placing a substrate in a reaction chamber said substrate provided with reduced Ni, Ge, or Mn on its surface; inputting a carbon compound gas into said reaction chamber; supplying an electric energy to said gas to convert said gas to a plasma; and forming said cabonaceous material on said substrate, wherein said reduced Ni, Ge, or Mn act as seeds on said surface of said substrate to promote formation of said carbonaceous material.

Abstract: The first fire voltage of chalcogenide-based switching devices is lowered to a value approximately equal to the threshold voltage by treatment of the chalcogenide material with fluorine either during or after deposition.

Abstract: An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.

Abstract: Silicon and oxygen containing coatings are deposited by the chemical vapor deposition of hydrogen silsesquioxane in an environment comprising nitrous oxide.

Abstract: A process and an apparatus for economically igniting microwave plasmas wherein no undesirable reaction products in the reaction chamber impair the quality of cladding produced thereby. The plasma is ignited on the gas outlet side of the reaction chamber by means of a high voltage that is applied at least for a short period of time. High-frequency pulses or low-frequency high voltages with frequencies in the range from 10 to 100 kHz are utilized. The high voltage is synchronized with the microwave pulses. According to a further process, the microwave pulses are excessively increased for a short time at least at their beginning. Also periodic excessive increases of the microwave pulses are possible A switchable high-voltage source is connected by way of a delay member and a current supply unit to the microwave device The output of the switchable high-voltage source is applied to the gas discharge line of the reaction chamber.

Abstract: An electron cyclotron resonance plasma heating apparatus system and process in which microwave energy is transmitted directly in an axial direction through an evacuated chamber to generate energetic electrons. These energetic electrons spiral around the magnetic field lines formed by the solenoid and spiral substantially parallel to the axis. A metal atom vapor source transmits the metal atom vapor into the chamber through a housing port in the chamber wall. The metal atom vapor source in the housing is out of the line of sight of the substrate. The metal atoms are ionized by the energized electrons, and these ionized metal atoms are confined to the plasma column substantially free of neutral atoms as such ionized metal approaches and contacts the substrate in said evacuated chamber. In this way, the ionized metal atoms substantially avoid contact with the wall of chamber. A sputter target of a second metal may be placed in the plane of the substrate and a bias voltage applied to the target.

Abstract: A method and apparatus for applying a protective coating onto a substrate comprises a power supply for generating an amplitude-modulated alternating electromagnetic field in a vacuum chamber. A silicon-organic compound is supplied in a gaseous state into the vacuum chamber and is plasma polymerized onto the substrate in the chamber without powdery portions. Another process parameter for controlling coating rate is adjusted to be at a high level so that when the amplitude modulation is stopped, powdery portions do appear in the coating. Thus at high coating rates amplitude-modulation according to the invention avoids such powdery portions.

Abstract: A process is disclosed for the production of an optical thin film waveguide of TiO.sub.2 with an attenuation of <5 dB/cm on a planar inorganic substrate wherein the thin film waveguide is produced by a microwave plasma CVD process (PCVD).

Abstract: A method for manufacturing an oxide superconductor film is disclosed, which comprises the steps of: preparing a substrate; depositing an oxide superconductor film on said substrate by chemical vapor deposition (CVD); and supplying excited oxygen to or near a film deposition site on said substrate during the deposition of said film.

Abstract: An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a discharge tube, a pair of solenoids arranged coaxially, a multiaperture electrode for extracting an ion beam, gas supply pipes, a set of charged particle retarding grids, a device for controlling temperature of a specimen and a vacuum unit are provided.

Abstract: Interlevel gaps between closely spaced circuit elements, such as closely spaced metal interconnect lines, are filed using a biased electron cyclotron resonance (ECR) deposition process. The gaps between circuit elements may be separated by distances of less than 0.6 microns and the gaps can have aspect rations in excess of 2.0. To fill such gaps between the circuit elements on a semiconductor wafer, the wafer is mounted in an ECR reaction chamber. A continuing flow of oxygen (O.sub.2) and silane (SiH.sub.4) gas is introduced into the ECR system's plasma and reaction chambers, respectively, while applying a microwave excitation so as to generate a plasma. High deposition rates and low film stress are achieved by controlling the flow of oxygen and silane so as to maintain an oxygen to silane gas flow ratio of less than 1.5.

Abstract: A process for depositing on a sample surface a smooth, wear-resistant coating including the steps of providing a vacuum processing chamber for holding the sample to be coated, introducing into the processing chamber coating-forming reactants for deposition on the sample surface, and supplying to the processing chamber a plasma stream with an electron temperature of up to 10 eV, a directed ion energy of 5 to 50 eV, and an ion flux at the sample in the range of 0.1 to 100 milliamps per square centimeter for transferring energy to the deposited material to form the smooth coating.

Abstract: In accordance with the invention, a plasma generated within a plasma confinement chamber for use in manufacturing semiconductor devices is controlled by monitoring both the neutral gas pressure P and the neutral gas temperature T. The process parameters P and T are then adjusted to control P/T.sup.n. In a preferred embodiment the pressure is adjusted to maintain P/T constant by adjusting the gas flow rate or the outlet pumping speed. The result is a plasma exhibiting enhanced stability over prolonged periods of time.

Abstract: A method of forming a boron nitride containing film on a substrate is disclosed. The method includes disposing a substrate in a reaction chamber, inputting a reactive gas comprising boron and nitrogen into the reaction chamber, exciting the reactive gas in the reaction chamber by applying a DC biased, RF electric field thereto in the presence of a magnetic field, and depositing the boron nitride containing film on the substrate.

Abstract: A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.

Abstract: A plasma processing deposition method for forming a material on a substrate is disclosed. The method includes inputting a reactive gas into a reaction chamber, admitting a microwave into the reaction chamber at a predetermined frequency and in a predetermined direction, establishing a magnetic field in the reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the propagation of the microwave and the strength of the magnetic field causes cyclotron resonance at approximately the position where the substrate is held in the reaction chamber, exhausting the reaction chamber to establish a predetermined pressure within the chamber and depositing the material on a surface of the substrate. This method may further include holding the substrate approximately at the predetermined cyclotron resonance position within the reaction chamber in order to readily deposit the material on the surface of the substrate.

Abstract: A method and apparatus for controlling plasma generated utilizing microwaves and a magnetic field. Microwaves including right and left circularly polarized waves are generated and introduced into a processing chamber and a ratio of the right circularly polarized waves to the left circularly polarized waves is controlled to enable control of at least one of an electron temperature and a density distribution for plasma processing.

Abstract: A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.

Abstract: A method for forming a superconducting oxide material including introducing an oxygen or an oxidizing gas and a reactive gas or reactive solution or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber; supplying microwaves to the plasma generating chamber wherein the direction of the magnetic field and the propagation direction of the microwaves are parallel such that the oxygen or the oxidizing gas and the reactive gas or reactive solution or reactive minute particles are converting into the plasma; and forming the superconducting oxide material on a film forming surface positioned in the plasma generating chamber during the application of the magnetic field.

Abstract: A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.

Abstract: To provide large-surface substrates economically and in a short time, with coatings which are to be more impenetrable and more homogeneous than conventionally produced coatings, a plasma CVD process is employed in which a reaction gas capable of depositing a coating material therefrom flows over the surface to be coated and the reaction gas is excited into a band-shaped plasma by microwaves fed from two microwave feeds, in a device comprising end walls (2, 3) and a waveguide (1) with a square cross-section in which two standing waves polarized perpendicular to one another are excited and are shifted relative to one another by one-quarter wavelength, the coupling of the microwaves to the plasma being performed by a lengthwise slit (6) made in one of the edges of waveguide (1), with two crossed microwave polarizers (4, 5) being positioned in waveguide (1), such that each polarizer can be penetrated by the microwaves from the feed (7, 8) adjacent thereto and cannot be penetrated by the microwaves from the feed (

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

Abstract: A method is provided for growing a diamond thin film on a selected substrate. First the substrate is prepared by scratching the surface thereof with diamond paste. The substrate is then confined in an enclosed space which includes high purity hydrogen and high purity methane gasses under relatively low pressure. The substrate is then irradiated with microwave energy to subject the substrate to a plasma exhibiting a first predetermined power density for a first period of time sufficient to form, on the substrate, diamond-like ball structure particles. The power density of the plasma to which the substrate is exposed is then effectively increased to a second predetermined power density and the substrate in exposed to the plasma for a second period of time sufficiently long such that (100) diamond faces grow on top of the ball structure particles.

Abstract: The present invention refers to coatings produced by means of the deposit of thin films formed by plasma-activated chemical vapor deposition of volatile fluoridated cyclic siloxanes having the structure [RR'SiO].sub.x, where R is an alkyl group with 1-6 carbon atoms, R' is a fluorinated alkyl group with 3-10 carbon atoms, the carbon in the alpha and beta positions with respect to the silicon atom is hydrogenated and x is 3 or 4. These particular coatings are useful because of their properties of protection and insulation.

Abstract: Diamond films or I-Carbon films can be formed on a surface of an object by virtue of plasma-assisted chemical vapor deposition. The hardness of the films can be enhanced by applying a bias voltage to the object during deposition.

Abstract: The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.