Abstract: A device for forming a microwave plasma including an ionizing chamber wherein a gas can be introduced so as to undergo excitation induced by the presence of a high frequency alternating electric field produced by a plurality of metal antennas. The device includes a gas-free volume wherein metal antennas are arranged parallel to one another and are distributed at the nodes of a regular plane array, an end of each antenna extending from the gas-free volume in the ionizing chamber and an induction loop producing microwaves in the gas-free volume.

Abstract: In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface

Abstract: A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.

Abstract: A method of forming boron-doped diamond film by, chemical vapor deposition (CVD) utilizing two-component system reactant gas doped with trimethyl borate.

Abstract: A method for continuously forming a functional deposited film of large area with a microwave plasma-assisted CVD method, characterized by including:continuously moving a strip member in a longitudinal direction, while forming halfway a columnar film formation space with said moving strip member as a side wall;introducing individually at least two or more kinds of source gases for the formation of deposited film having different compositions via a plurality of respective gas supply means into said film formation space;introducing source gases for the formation of deposited film via said gas supply means into said film formation space;at the same time exciting a microwave plasma within said film formation space by radiating or transmitting said microwave energy with microwave applicator means which allows the microwave energy to be radiated or transmitted directionally in one direction perpendicular to a propagating direction of microwave; andforming the deposited film having its composition controlled on a sur

Abstract: A method for generating plasma, comprising irradiating an electromagnetic wave to an energy converter capable of converting an irradiated electromagnetic wave to an electric energy and discharging said electric energy, in the presence of a rare gas in a chamber. A method for activating plasma, further comprising applying an electric cr magnetic field to said generated plasma, a process for treating a substrate, using the generated and optionally activated plasma, and apparatuses therefor are also disclosed.

Abstract: Method for coating a substrate formed of a sintered silicon nitride based material with a film of diamond by a gas phase synthesis technique including a first step of applying a film having a thickness of 0.5 to 2.0 .mu.m at a temperature not higher than a temperature at which grain boundary components of the substrate volatilize, and a second step of synthesizing the film of diamond-and-the-like to a thickness of 5 to 100 .mu.at a temperature which expedites synthesis of the film of diamond.

Abstract: A showerhead includes a plurality of gas inlets for supplying process gas to a semiconductor substrate surface, and a plurality of gas outlets for removing gas and volatile byproducts produced as a result of reaction of the process gas with the substrate surface. Each gas inlet is concentrically positioned within a respective gas outlet. The showerhead improves the utilization of process gas species at the substrate surface by providing gas flow in a direction perpendicular to the substrate surface and avoiding flow of the process gas or volatile byproducts laterally across the substrate surface. The showerhead is useful for uniform stripping of a mask of organic material by direct contact of the incoming reactive gas with the substrate surface and immediate removal of the process gas and volatile byproducts through the concentrically arranged gas outlets.

Abstract: A process is disclosed for depositing diamond onto a small shaped graphite article by chemical vapor phase deposition, which includes placing the shaped graphite article in a suspension of diamond powder in a liquid, agitating the suspension containing the shaped article, removing the shaped graphite article from the suspension and drying it, and then carrying out the chemical vapor phase deposition of the diamond. Also disclosed are diamond coated shaped graphite articles (e.g., diamond coated graphite fibers having fiber diameters less than about 100 microns).

Abstract: A method for grafting maleic anhydride groups to the surface of polyolefins s described. The method uses an excited inert gas phase species in contact with the polyolefin and solid maleic anhydride. The surface functionality is identified by X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy. The modified polyolefin has an increased ability to form a thermal bond with metals, including aluminum.

Abstract: The plasma processing apparatus of the invention generates plasma from a reactive gas with microwave power so as to process a substrate. The plasma processing apparatus includes: a vacuum chamber having an evacuation means and reactive gas inlet ports; a means for holding the substrate to be processed which is disposed inside the vacuum chamber; a dielectric plate disposed at a position facing the substrate to be processed so as to form an integral part of the vacuum chamber; a metal conductor plate disposed on an outer plane of the dielectric plate not facing the vacuum chamber so as to face the substrate to be processed; and a means for supplying microwave power substantially inverse-radially from a circumferential side of the dielectric plate towards a center thereof.

Abstract: A microwave enhanced chemical vapor deposition method is provided for coating plastic articles with crystalline carbon films. First, a reactive gas including hydrogen gas and a carbon containing raw material gas is introduced into a reaction chamber. Next, a magnetic field is established in the reaction chamber. Microwaves are next introduced into the chamber to create a cyclotron resonance in order to form a plasma of carbon and hydrogen containing gas. The carbon containing plasma deposits a coating of a crystalline and amorphous carbon on a substrate placed within the reaction chamber, while the hydrogen plasma simultaneously etches away the amorphous carbon, thereby leaving only crystalline carbon. The method is particularly adapted for the deposition of crystalline carbon films on plastic materials, as the substrate is not required to be heated in order to receive a layer of crystalline carbon.

Abstract: The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

Abstract: An improved microwave plasma CVD process for forming a functional deposited film using a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.

Abstract: A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition.The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride.The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

Abstract: A method of fabrication of preforms for manufacturing of optical fibers based on surface plasma wave chemical vapor deposition (CVD) is proposed. A surface plasma wave of either the symmetric E.sub.01 or the hybrid HE.sub.11 type is excited on the outside surface of a dielectric starting body. The plasma leads to a CVD of doped or undoped silica layers to obtain the preform. The advantages of the method are the absence of any moving parts in the machinery, high deposition rates, minimal precursor gas usage. Equipment to carry out this process is described as well.

Abstract: A method and device is described to generate plasmas on the surface of dielectric filaments and--by a plasma chemical vapor deposition (CVD) mechanism--deposit dielectric films on the filaments as they move through the plasma zone. The plasma generated by plasma surface waves are located only in the vicinity of the filament thus reducing precursor gas consumption, deposition on chamber walls, power requirements. The method is particular suitable for manufacturing dielectric coated optical fibers.

Abstract: A method and apparatus for producing a magnetic recording medium in which production of flakes in a film-forming process and the occurrence of arc discharge in the film-forming surface of a substrate are prevented to thereby attain improvement in the quality of the resulting film and in producing efficiency. A web-like substrate is made to run in a vacuum chamber while the substrate is arranged opposite to a sheet-shaped plasma stream. At the same time, a reactive gas is supplied to the plasma stream while an electric field is generated in a direction crossing the plasma stream and the substrate, which are arranged opposite to each other to thereby form a thin film on the plasma stream side surface of the substrate. Accordingly, the production of flakes is prevented, so that the occurrence of arc discharge in the film-forming surface of the substrate is prevented.

Abstract: The subject is a plasma-enhanced CVD process for depositing a silicon oxide film on a substrate by using an organosilicon compound such as tetraethoxysilane and oxygen or ozone as the essential reactants. The disclosed CVD method uses a plasma containing oxygen ions, and the density of oxygen ions impinging on the substrate surface is cyclically decreased and increased with a short period such as, e.g., 1 sec. In extreme cases which are rather preferable, the effect of the oxygen plasma is cyclically nullified and returned to a maximum to thereby alternate plasma CVD and plain thermal CVD. The obtained film is comparable in film properties to silicon oxide films deposited by known plasma CVD methods and, when the substrate has steps such as aluminum wiring lines, is better in step coverage and gap filling capability. The film exhibits a still better profile when hydrogen peroxide gas or an alternative hydrogen containing gas is added to the reactant gas mixture.

Abstract: An improved vacuum arc coating apparatus is provided, having a tube defining reaction zone with a plasma channel defined within a series of aligned annular substrate holders, or between an outer wall of an axial chain of substrate holder blocks and the inner wall of the tube. The substrate holders thus act as a liner, confining an arc within the plasma channel. Carrier and plasma-creating gases and the reaction species are introduced into the tube, and the deposition process may be carried out at a pressure between 100 Torr and 1000 Torr. Magnetic coils may be used to create a longitudinal magnetic field which focuses the plasma column created by the arc, and to create a transverse magnetic field which is used to bias the plasma column toward the substrates. Substrates can thus be placed anywhere within the reaction zone, and the transverse magnetic field can be used to direct the plasma column toward the substrate, or the tube itself can be rotated to pass the substrate through the plasma column.

Abstract: A radiofrequency wave apparatus and method which provides a relatively high concentration of reactive species from a plasma for the treatment of a surface particularly of a substrate (31) with a complex geometry in a holder (62) which masks a portion of the substrate. The radiofrequency waves are preferably microwaves or UHF waves. The apparatus and method is particularly useful for rapid plasma assisted chemical vapor deposition of diamond on a portion of the substrate, particularly on surfaces of objects with complex geometries such as a drill (60) or a seal ring (64).

Abstract: A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4.degree. C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4.degree. C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.

Abstract: A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.

Abstract: A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

Abstract: Uniform electrically conducting multicomponent material is deposited on an electrically conducting substrate by means of a PCVD method. A plasma, for example a glow discharge plasma, a high frequency plasma or a microwave plasma is generated in a reaction space. The plasma is periodically reciprocated. Starting materials for the single components of the multicomponent material are added to a flowing gas phase. To obtain multicomponent material of the desired composition, the flowing gas phase is split into at least two flowing gas phases each comprising only starting materials for a single component of the multicomponent material. The separate gas phases are time sequentially applied to the plasma. The deposited multicomponent material may be subjected to a thermal treatment.

Abstract: A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

Abstract: A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

Abstract: A method for forming synthetic diamond coatings on surfaces, such as select surfaces of boat hulls, motor vehicle underbodies, chemical storage tanks and the like, which are subject to corrosion and/or erosion. In a preferred form, the apparatus is portable and is either hand-holdable or is carried by a self propelled vehicle or computer controlled automatic manipulator. In a particular form, the apparatus includes a chamber having an opening therein with a circumscribing rim adapted to be forced against a portion of the surface to be coated while one or more carbon atom, containing materials in gaseous and/or solid particle form are fed to the surface interior of such rin and form a synthetic diamond coating or the like thereagainst.

Abstract: A method for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

Abstract: A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously

Abstract: A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.

Abstract: In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.

Abstract: A process for coating the inner surface of a greatly arched, essentially dome-shaped substrate by CVD is described wherein reaction gases, which contain layer-former molecules, are conveyed into a reaction chamber containing the substrate(s) to be coated. The reaction gases are conveyed through at least one gas inlet, placed facing the vertex of the dome at a distance from the surface to be coated. Deposition of the layer material on the substrate is brought about by producing a reaction zone on the inner surface of the substrate to be coated. The reaction gases do not, as is usual for known processes, flow slowly into the reaction chamber. Instead, for production of a uniform coating, the reaction gases are introduced at a high speed such that the product of Reynolds number, R, of the gas jet in or in the immediate vicinity of the gas inlet and the distance, h, between the gas inlet and the dome vertex is 400<R.times.h[mm]<4000.

Abstract: In order to have carbon fiber reinforced carbon resistant to oxidation, the proposal is for a process by means of which a bonding layer of amorphous SiNx is applied to the carbon fiber reinforced carbon to which in turn is applied a protective layer which is oxidation resistant at a temperature T, where T>400.degree. C. consisting preferably of Si.sub.3 N.sub.4.

Abstract: A plasma discharge tube (5) having a diameter that corresponds to a quarter wavelength of the standing wave is selected and the waveguide system (2) is dimensioned and tuned such that the standing wave forms a first voltage maximum at a first side of the plasma discharge tube (5) and the standing wave is also supplied reflected, so that it forms a second, anti-phase voltage maximum at a second side of the plasma discharge tube (5) that lies opposite the first side and faces toward an end termination (12) of the waveguide system (2). A controlled magnetic field is applied in order to achieve an especially low working pressure.

Abstract: A method for coating components such as cutting tools with diamond using a microwave plasma excited gas mixture in a reactor equipped with a bowl-shaped substrate table having a concave inner surface for supporting the components to be coated. The plasma forms a plasma ball during the coating operation and the geometrical shape, configuration and position of the table is adapted to stabilize the plasma and control the shape and position of the plasma in such a way that the outer surface of the plasma conforms substantially to the surfaces of the components to be coated.

Abstract: A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedstock gas enters a conversion zone. In the second step, by-products from the conversion zone proceed to an atomization zone where diamond is produced. In a preferred embodiment a feedstock gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (55.degree.-1100.degree. C.) and low pressure (0.1 to 100 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the reaction process, the feedstock gas mixture is converted to H.sub.2, CO, C.sub.2 H.sub.2, no O.sub.2, with some residual water. Oxygen formerly on the water is transferred to CO.

Abstract: In a glow discharge deposition process for the preparation of hydrogenated, Group IV semiconductor alloys, the substrate is maintained at a temperature which is positively correlated with the deposition rate and which is high enough to impart sufficient kinetic energy to the layer to activate the removal of undesirable morphologies, but low enough to prevent degradation of the layer caused by the excessive loss of hydrogen.

Abstract: A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

Abstract: A method for sequentially depositing a silicon oxide based film as a barrier on a substrate. The film is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: Applicants have discovered that gallium arsenide surfaces can be dry passivated without heating or ion bombardment by exposing them downstream to ammonia plasma formation. Specifically, a workpiece having exposed gallium arsenide surfaces is passivated by placing the workpiece in an evacuable chamber, evacuating in the chamber, generating an ammonia plasma removed from the immediate vicinity of the workpiece, and causing the plasma products to flow downstream into contact with the workpiece. Preferably the plasma gas pressure is 0.5 to 6.0 Torr, the substrate temperature is less than 100.degree. C. and the time of exposure is in excess of 5 min. The plasma should be generated at a location sufficiently removed from the workpiece that the workpiece surface is not bombarded with ions capable of damaging the surface (more than about 10 cm) and sufficiently close to the workpiece that reactive plasma products exist in the flow (within about 30 cm).

Abstract: Broadly, the present invention is directed to improving a chemical vapor phase deposition (CVD) method for synthesis of diamond wherein a hydrocarbon/hydrogen gaseous mixture is subjected to a combustion flame in the presence of oxygen to at least partially decompose the gaseous mixture to form CVD diamond. The improvement in process comprises subjecting said combustion flame to one or more of dielectric heating, d.c. discharge, or a.c. discharge. Dielectric heating can be accomplished by subjecting the combustion flame to microwave (MW) frequency discharge or radiofrequency (RF) discharge. By superimposing dielectric heating or d.c./a.c. discharge plasma generation on combustion flame process, the carbon utilization rate of the combustion flame process should improve substantially.

Abstract: A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

Abstract: Fastening devices such as washers, seals and drive pins subject to corrosive deterioration of all or select portions thereof wherein all or such select portions are protected from such corrosion and failure by a thin coating or coatings of hard surface material or materials. In a preferred form, the fastening device is coated with a synthetic diamond material formed as a thin layer in situ thereon. In addition to preventing moisture and other corrosive material from penetrating to the base metal, such synthetic diamond material serves to preserve the surface integrity of the fastening device preventing the formation or spread of surface flaws produced during use or during the fabrication of the fastening device.

Abstract: A plasma reactor and method for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power.

Abstract: A process for forming a deposited film on a substrate by microwave plasma CVD comprises holding a substrate in a pressure-reducible reactor vessel, introducing microwave energy into the reactor vessel from at least three microwave-introducing means attached thereto for introducing the microwave energy into the reactor vessel while introducing a raw material gas into the reactor vessel, and forming plasma in the reactor vessel by the microwave energy, thereby forming a deposited film on the surface of the substrate.

Abstract: A method for forming a dense, carrier blocking, thin protective film of a hydrogenated amorphous material containing an ingredient to reduce surface wetting on an a-Si:H photosensitive member. The method includes forming the protective film by generating a plasma of a starting gas suitable for forming the hydrogenated amorphous material within a deposition space where the photosensitive member is positioned under vapor deposition conditions. Hydrogen radicals are generated by decomposing hydrogen gas. The quantity of dangling bonds at the surface of the amorphous material film is reduced to thereby increase the density of the film by introducing a sufficient amount of the hydrogen radicals into the deposition space in the proximity of the photosensitive member to cover the surface of the amorphous material film as it forms.

Abstract: A tabular diamond crystal is formed on a substrate by gas phase synthesis, wherein the diamond crystal has a ratio of thickness to width of from 1:4 to 1:1,000 and the surface of the substrate on which the diamond crystal has been formed and the top surface of the diamond crystal are at an angle ranging from 0.degree. to 10.degree..

Abstract: Decomposition of ozone in a microwave discharge cavity leads to formation of highly energetic excited states of atomic oxygen which can efficiently oxidize materials at a temperature far less than that needed for purely thermal oxidation. This technique can be applied to formation of films of silica at the surface of silicon and silicon carbide while maintaining quite moderate surface temperatures, often under 100.degree. C. The technique can be used generally in a process to oxidize materials whose oxidation requires a standard free energy change of less than about +636 kJ/mol.