Abstract: A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: An exemplary method of selectively patterning a hard mask or reticle using a laser to cause deposition of hard mask material in locations forming the hard mask pattern. This method can include providing a vapor in a vapor chamber containing an integrated circuit substrate, and applying a laser to selected areas of the integrated circuit substrate to cause a reaction with the vapor and create a structure on the integrated circuit substrate.

Abstract: After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

Abstract: The oxides-enclosed fine glass particles are arranged such that two or more pieces of at least two kinds of enclosing particles, which comprise oxides, double oxides, or salts of oxyacids, or double oxides or double salts thereof, are enclosed in each of the fine glass particles. The fine particles can be easily manufactured by mixing a powder material of glass with a powder material of oxides which comprise oxides, double oxides, or salts of oxyacids, or double oxides or double salts thereof that are not made to glass; converting the thus obtained mixture of the materials into a mixture in a vapor-state by supplying the thermal plasma thereto; and quickly cooling the mixture in the vapor-state. Highly-scattered fine particles of oxides can be easily obtained from the fine particles, and thus a plurality of kinds of fine particles of oxides can be evenly and uniformly mixed in a small amount with a mother material without being unevenly scattered.

Abstract: A method for the controlled nanometer-scale deposition of molecules on a surface, by means of coherently controlled optical focusing. The coherent control is conveniently performed by inducing a linear superposition of molecular bound states, by means of electromagnetic fields supplied by an applied laser beam. The optical focusing is conveniently performed by passing a beam of such suitably prepared molecules through another electromagnetic field supplied by a standing wave induced by two interacting laser beams. Altering the characteristics of the laser beams alters the forces operating on the molecules, thus directing them to the desired position on the surface. Selection of the frequencies, intensities, and relative phases of the electromagnetic fields, as well as the geometry of the interaction between the molecular beam and the electromagnetic fields, enables deposition of aperiodic molecular patterns on the surface with a resolution of 10 to 15 nanometers.

Abstract: An apparatus and process for applying a superconductive layer on an elongate substrate that includes moving the elongate substrate through a heating zone, applying a pulsed laser beam against a target, having a length, that is coated with superconductive material wherein particles of superconductive material are separated from the target and strike the elongate substrate with a plasma beam in the heating zone, and oscillating the pulsed laser beam across the target to provide a substantially uniform coating of superconductive material on the elongate substrate.

Abstract: A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

Abstract: A method of forming an oriented film. A target is provided and material from the target is ablated onto a substrate to form a film. The film is heated in a synthesis gel of the target material to orient the film.

Abstract: In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.

Abstract: A method of coating a substrate with an oriented film. A target is ablated to create a plume. The substrate is manipulated, which may be by vibration, in the plume to coat the substrate with a film. The film is heated in a synthesis gel of the target to form the oriented film.

Abstract: A method of forming on an object a surface coating having a high mechanical strength and chemical and physical stability above 700° C. is disclosed. The method comprises (a) electrophoretically depositing at least one surface coating material on a surface of the object for obtaining a green coating on the surface; and (b) infiltrating into and depositing onto the green coating at least one additional surface coating material by a gas-phase infiltration/deposition method, thereby forming a high performance surface coating, wherein, the at least one surface coating material and the at least one additional surface coating material are chemically and physically stable above 700° C.

Abstract: A method for making wire grid optical elements by preferentially depositing material on a substrate is disclosed. Material can be preferentially deposited by directing an electromagnetic interference pattern on to a substrate to selectively heat areas of the substrate coincident with the interference pattern maxima. The substrate can then be exposed to gas phase material that is capable of preferentially accumulating on surfaces based on surface temperature.

Abstract: The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference electrodes. The control electrodes are biased with a negative potential. The plasma assumes a potential more positive than the control electrodes. The reference electrodes are then biased to be more positive than the plasma. Hence, negative ions or negatively-charged particulates in the plasma are attracted to the more positive reference electrodes, and thus escape the plasma without being trapped therein, and are not available to serve as nucleation or agglomeration points for contaminants. A pair of Helmholtz coils produce a magnetic field having magnetic field lines that run longitudinally between the control electrodes.

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: A method of fabricating ceramic parts is disclosed using a laser deposition process to produce highly dense ceramic parts. A metal substrate is preferably used and ceramic powder deposited in layers on the substrate, while varying the power of the laser beam to bond the layers together without cracking the substrate or causing a plasma reaction in the ceramic powder. Dense structures which are about 96% to about 100% ceramic can be produced. A part can be graded using different types and mixtures of ceramic powders to produce the part of a desired composition.

Abstract: A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21H) or tritium (31H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.

Abstract: A method of forming an oriented film. A target is provided and material from the target is ablated onto a substrate to form a film. The film is heated in a synthesis gel of the target material to orient the film.

Abstract: A method of coating a substrate with an oriented film. A target is ablated to create a plume. The substrate is manipulated, which may be by vibration, in the plume to coat the substrate with a film. The film is heated in a synthesis gel of the target to form the oriented film.

Abstract: Several techniques may be used for forming a colored interference filter coating on a substrate such as polyester film. The interference filter has two metal reflective films, at least one of which is semi-transparent. A layer of transparent acrylate polymer dielectric between the metal layers completes the interference filter, which may be sandwiched between protective layers. The dielectric is formed by evaporating an acrylate monomer having a molecular weight in the range of from 150 to 600. Preferably the acrylate monomer has a molecular weight to acrylate group ratio in the range of from 150 to 400. The acrylate condenses on the substrate and is polymerized in situ for forming a monolithic film with a sufficient thickness to produce an interference color. In several embodiments different areas of the film have different thicknesses for producing different interference colors.

Abstract: A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.

Abstract: Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 106 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

Abstract: A magneto-optical disc in which, for preventing damage to a recording layer in case the foreign matter is sandwiched between a magnetic field modulation head and the magneto-optical disc, or the magnetic field modulation head is contacted for some reason with the magneto-optical disc, the direction of magnetization of the recording layer formed on a polycarbonate substrate, designed for transmitting the laser light, is switched by the magnetic field modulation head. The magnetic field modulation head is mounted floating in a direction opposite to the direction of incidence of the laser light from an optical head converged on an objective lens. A diamond-like carbon (DLC) protective film, composed of a thin DLC film, is provided on the surface of recording layer towards the magnetic field modulation head.

Abstract: A pulsed laser deposition (PLD) process is used for forming a functional metal, ceramic, or ceramic/metal layer on an inner wall of a hollow body. Simultaneously with the deposition process, a thin-film laser treatment is carried out, whereby a laser beam impinges on the coating layer as it is being formed to achieve a rapid heating followed by a rapid cooling and solidification of the deposited coating layer. In this context, the energy and material flux densities are prescribed and controlled as a function of the spacing of the condensation region from the substrate surface. Laser pulses having an energy of 1 to 2 Joules and a pulse repetition rate of 10 to 50 Hz are used. The pulse duration as well as the residual gas atmosphere in the vacuum deposition chamber are controlled so that the generated plasma flux forms the desired layered grain structure, namely a glassy amorphous structure, a columnar structure, or a polycrystalline structure.

Abstract: Powdery Cr(CO).sub.6 is stored in a reservoir, into which Ar gas, under flow rate control by a flow rate controller, is introduced. On the other hand, He gas, whose molecular weight differs from that of Ar gas, is also introduced into the reservoir under flow rate control by another flow rate controller. These Ar and He gases are used as carrier gases for feeding a reactive gas into a chamber. The reservoir sublimates the powdery Cr(CO).sub.6 stored therein. The Cr(CO).sub.6 obtained by sublimation is carried by the Ar and He gases which are introduced into the reservoir, and supplied onto a substrate in the chamber. The substrate is irradiated with a laser beam. This irradiation with the laser beam decomposes the Cr(CO).sub.6 gas to form a film of metallic chromium on the substrate.

Abstract: An electron-emitting device having an electroconductive film including an electron-emitting region and arranged between a pair of electrodes is manufactured by forming an electroconductive film on a substrate and producing an electron-emitting region in the electroconductive film. The electroconductive film is formed on the substrate by heating the substrate in an atmosphere containing a gasified organic metal compound to a temperature higher than the decomposition of the gasified organic metal compound.

Abstract: An apparatus for metal line deposition and a method for metal line deposition using the apparatus. A donor plate has a donor substrate transparent to a focused coherent light beam and a donor surface. The donor surface of the donor plate has a channel formed therein. The channel is coated with a metallic material. A deposition substrate onto which the metal line is to be deposited is disposed adjacent the donor surface of the donor plate. The focused coherent light beam is directed through the donor substrate of the donor plate and onto the metallic coating in the channel. The focused coherent light beam causes the metallic material to ablate from the channel by discharging ions of the metallic material away from the channel and onto the deposition substrate to form the metal line.

Abstract: The invention relates to a composite composed of a plastic substrate and a thin, continuous metal-containing layer, characterised in that the metal-containing layer is ductile, adheres firmly to the plastic substrate, has a thickness of <2 .mu.m and is composed of a compound corresponding to the formulaM.sub.a O.sub.b C.sub.x N.sub.y B.sub.zwherein:M means one or more metals from the group comprising Ti, Ta, Nb, Zr and Hf,a=0.025 to 0.9b=0.025 to 0.7x=0.2 to 0.9y=0 to 0.7z=0 to 0.7a+b+x+y+z=1provided that the value of a, starting from the substrate surface, increases from a value approximating zero towards to the layer surface, and at least 50% of the carbon atoms at the base of the layer are bound to other carbon atoms by C--C bonds.

Abstract: Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 10.sup.6 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

Abstract: Apparatus for determining a best trajectory for laser CVD through a strategy of acquiring a series of two-dimensional plane images of the substrate. These images, taken together, contain topographical information as well as local reflectivity and thermal mapping information. The images are combined in digital format with additional substrate mapping information to calculate a best three-dimensional trajectory for the desired laser operation. The technique is especially suitable for compensation of tilt or severe height variation on microelectronic parts. The apparatus can deposit platinum conductors on integrated circuits by pyrolytic deposition from Pt(PF.sub.3).sub.4 vapor.

Abstract: A film of a coating material is produced on a substrate by a pulsed laser deposition method in which the material that forms the coating material is first combined with a matrix material to form a target. The target is then exposed to a source of laser energy to desorb the matrix material from the target and lift the coating material from the surface of the target. The target and the substrate are oriented with respect to each other so that the lifted coating material is deposited as a film upon said substrate. The matrix material is selected to have the property of being more volatile than the coating material and less likely than the coating material to adhere to the substrate. The matrix material is further selected as having the property such that when the target is exposed to a source of laser energy, the matrix material desorbs from the target and lifts the coating material from the surface of the target.

Abstract: UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.

Abstract: A process provides for the reactive treatment of workpieces in which a plasma beam is produced in an evacuated recipient. With respect to the area of the highest plasma density along the beam axis, workpieces are arranged in a radially offset manner. Fresh reactive gas is charged into the recipient and used-up gas is sucked out of the recipient. A vacuum treatment system comprises a plasma beam production arrangement, a gas inlet operatively connected with a reactive gas supply, an axially extending workpiece carrier arrangement radially set off from an axis of a plasma beam produced by the plasma beam production arrangement. The workpiece carrier arrangement mounts a rotational surface coaxial with respect to the axis of the plasma beam and a gas suction system. The process and system are used to deposit metastable layers, including cBN-layers, .alpha.-Al.sub.2 O.sub.3 layers, C.sub.3 N.sub.

Abstract: A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may be closed about the wafer while the closable enclosure is surrounded by the process gas.

Abstract: The present invention relies upon a free space magnetic field in a pulsed laser deposition (PLD) chamber for forming high quality thin films made from diverted ions from a plume evaporated from an ablated target illuminated by a pulsed laser beam. The magnetic field exerts a qv.times.B Lorentz force upon the ions that is orthogonal to the magnetic field and to their direction of travel in the plume, and curves the ions toward the substrate, while neutral particulates continue to pass by the substrate so that the large neutral particulates are not deposited on the substrate. A shield prevents the deposition of plume species in direct line of sight between the target and the substrate so that only charged ions curved by the magnet are deposited on the substrate. A permanent magnet is used to separate charged species from neutral species.

Abstract: A nitrogen oxide sensor and a method of manufacturing the sensor are disclosed. The sensor has a gas detecting portion including sensitive material having electric property thereof subject to change in association with presence of nitrogen oxide in gas and a pair of electrodes electrically connected with the gas detecting portion. The gas detecting portion includes, as a main component thereof, metal oxide compound represented by a general formula:Bi.sub.2 Sr.sub.2 (Ca.sub.1-x Y.sub.x)Cu.sub.2 O.sub.8+y(0.8.ltoreq.x.ltoreq.1; 0.ltoreq.y.ltoreq.1)and having the 2212 phase crystal structure and crystalline size greater than 100 .ANG..

Abstract: Method and apparatus for the selective heat-induced deposition of solid material from gas-phase or super-critical fluids to produce three-dimensional parts by pyrolysis of the fluids. The apparatus involves computer/feedback control of the evolving shape by direct monitoring of the volumetric deposition rate or growth profile, and modifying light beam focal properties, the position and orientation of the deposit relative to the beam foci, and/or the pressure and flow of reactants to the growth zone. The precursor gases may be pressurized and heated to the critical point or beyond, becoming super-critical fluids, without condensation. Growth occurs by diffusion of reactants to the growth zone through a boundary layer over the deposit. One method of growth includes directing a large-area impinging jet of precursor fluid(s) onto a deposit interface, while limiting the reaction zone to a smaller area determined solely by size of the heated zone (through use of a radiant beam, e.g.).

Abstract: A method of preparing faces of a laser based on III-IV compounds, the method comprising the following operations:1) the faces of the laser are opened;2) said faces of the laser are placed in an enclosure in which there obtains a pressure of about 10.sup.-7 mbar to about 10.sup.-8 mbar, and they are subjected to a step of cleaning by irradiation with a pulsed laser; and3) the same pulsed laser is used to ablate a target so as to subject said faces to a passivation operation whereby silicon Si or gallium nitride GaN is deposited thereon by the pulsed laser deposition method until a thickness is obtained lying in the range 2 .ANG. to 20 .ANG..

Abstract: A method of masking surfaces during fabrication of semiconductor devices is disclosed, which includes providing a substrate, and in a preferred embodiment a silicon substrate. The surface is hydrogen terminated (or hydrogenated) and a metal mask is positioned on the surface so as to define a growth area and an unmasked portion on the surface. Ozone is generated at the surface, at least in the unmasked area, by exposing the surface to a light having a wavelength approximately 185 nm (an oxygen absorbing peak), so as to grow an oxide film on the unmasked portion of the surface. The metal mask is removed and the oxide film then serves as a mask for further operations and can be easily removed in situ by heating.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: The methods for ceramic coatings synthesized by chemical reactions energized by laser plasmas were invented. Laser plasmas were generated by pulsed laser beams focused by a reflector having a hole. The ions and electrons were formed by the laser plasmas from gaseous molecules or solid materials. The first method applied an electric or a magnetic field to separate ions from electrons and to promote ion-atom and ion-molecule reactions. The product molecular ions were focused and deflected to coat patterned coatings with extremely high precision. The second method allowed the electron-ion recombinations to form product molecules or radicals to form high uniform coatings. These two methods and their combinations provides consistent, or continuous modulations, or discrete layers in vast varieties of chemical compositions and crystal structures. Ceramic films were separated by dissolving the substrates.

Abstract: This invention relates to improvements in or relating to ceramic piezoelectric ink jet print heads of the kind having an ink channel for connection to an ink ejection nozzle and to a reservoir for the ink, and a piezoelectric wall actuator which forms part of the channel and is displaceable in response to a voltage pulse thereby generating a pulse in liquid ink in the channel due to a change of pressure therein which causes ejection of a liquid droplet from the channel. Such print heads are referred to hereafter as piezoelectric ceramic ink jet print heads.

Abstract: In order to improve a process and an apparatus for producing a functional structure of a semiconductor component, which comprises layers arranged on a base substrate and defining the entire functions of the semiconductor component, such that the functional structure of the semiconductor components can be produced as simply as possible and with as little susceptibility as possible with respect to the quality of the semiconductor components it is suggested that all the layers be produced without lithography and applied to the base substrate one after the other exclusively with physical layer application processes.

Abstract: The invention relates to a coated cemented carbide body for rock drilling having a substrate containing at least one metal carbide and a binder metal and an at least partly covering coating comprising at least one diamond- or cBN-layer applied by CVD- or PVD-technique. The cemented carbide body has a core of cemented carbide containing eta-phase surrounded by a surface zone of cemented carbide free of eta-phase.

Abstract: Provided are novel thermosetting powder coating compositions which are useful for coating metal articles and protecting such articles from acidic corrosion. The compositions are comprised of an epoxy containing acrylic copolymer crosslinked with both an aliphatic dibasic acid and a blocked polyisocyanate.

Abstract: For the manufacturing using an LCVD process of a rod-shaped, three-dimensional structure extending into three dimensions, two laser beams (12, 13) are focused on a common focal point (12a) in a gaseous or liquid medium containing a compound which produces the structure material when decompounded by the laser beams. In this way, structures which extend three-dimensionally may also be made from minimally absorbent materials which are essentially transparent. This additionally allows for good control of the direction of the growth of the structure.

Abstract: A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

Abstract: An apparatus and a method are provided for depositing both surfaces of the substrate in one deposition process via on-axis oriented laser ablation.

Abstract: A process for forming a deposition film comprises introducing a gaseous starting material for forming a deposition film and a gaseous oxidizing agent having an oxidation action on the gaseous starting material separately into a reaction space to chemically contact these two, thereby generating a plurality of precursors including precursor in an excited state, and utilizing at least one of the generated precursors as a supply source for film-constituting members, thereby forming a deposition film on a substrate provided in a film-forming space, the deposition film being formed while supplying a bias energy to the substrate and changing the intensity of the bias energy.

Abstract: An ablation process by which fused deposits of silicon particles are accuated on a substrate of selected material in accordance with whether microclusters of spherical configurations or microfilaments of cylindrical configurations are to be fabricated. Silicon ablation is accomplished in an inert gas atmosphere with an excimer laser that generates light pulses of which the wavelength and frequency are controlled to fix the energy level thereof. The pressure of the inert gas atmosphere is also controlled in accordance with whether microclusters or microfilaments are to be fabricated.