Abstract: In a method for manufacturing electrodes for medical applications, particularly implantable stimulation electrodes, having an active layer of porous titanium nitride, a substrate of electrically conductive material that is in an atmosphere containing titanium, nitrogen and hydrogen is irradiated with an excimer laser through an optical mask, and a structure of porous titanium nitride is deposited on the substrate.

Abstract: Laser energy is used to make precursors of crystalline materials, such as diamond, by providing an environment in which optical radiation may be efficiently absorbed to create significant precursor concentrations. In some instances this process is augmented by evaporating or liquefying a sacrifice to induce heterogeneous nucleation. In other cases two chemically and spatially distinct plasmas are juxtaposed to initiate the required chemistry.

Abstract: Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

Abstract: A process for vapor depositing an evaporant onto a substrate is provided which involves:presenting the substrate to a deposition chamber, wherein the deposition chamber has an operating pressure of from 0.001 Torr to atmospheric pressure and has coupled thereto a carrier gas stream generator and an electron beam gun capable of providing an electron beam at the operating pressure and contains an evaporant source;impinging the evaporant source with the electron beam to generate the evaporant;entraining the evaporant in the carrier gas stream; andcoating the substrate with the carrier gas stream which contains the entrained evaporant, and an apparatus for performing the process.

Abstract: In a method for producing a three-dimensional object by successive solidification of superposed layers of the object a deformation of the object caused by shrinkage during the solidification shall be reduced. To this end first of all respective partial regions (6a . . . 6k) of a layer are solidified and simultaneously connected with underlying partial regions of the previously solidified layer to form multilayered cells and thereafter adjacent partial regions of the same layer are interconnected by solidifying narrow connecting regions (8a . . . 8p). The intermediate regions (7) between the individual partial regions are solidified by post-curing.

Abstract: A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system.

Abstract: A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate.

Abstract: A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system.

Abstract: A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

Abstract: Process for the preparation of trialkyl compound of a Group 3a metal, in which a Group 3a metal is contacted with an alkyl halide in the presence of an alkali metal to obtain a trialkyl compound of the Group 3a metal and alkali-metal halide.

Abstract: A laser sputtering apparatus includes a laser oscillator for emitting laser beams, a target-supporting member supporting a flat target thereon and being rotatable in a vacuum chamber while the target is inclined relative to the target-supporting member, a driving device for rotating the target-supporting member, a substrate-supporting member for supporting the substrate parallel with the target-supporting member, and an optical device for irradiating the target with the beams emitted by the laser oscillator.

Abstract: A superconducting thin oxide film is formed by the steps of mixing a gas of the organometal compound of the alkali earth metal, a gas of at least one organometal compound of the element of the group IIIa and/or a halogenide thereof, and a gas of at least one organometal compound of a transition metal and/or a halogenide thereof, with an inert gas, to produce a gas mixture; mixing an oxygen-containing gas to said gas mixture to produce a gas mixture having a predetermined oxygen partial pressure; and thermally decomposing said gas mixture having the predetermined oxygen partial pressure on a substrate to form a thin film of a complex oxide on said substrate.

Abstract: A laser ablation device for forming a thin film includes a vacuum chamber having a gas introduction port through which an oxidating gas is introduced into the chamber, and a light-transmittable section, a target holder disposed in the vacuum chamber for holding a target made of a film forming material of an oxide, an object holder confronting the target holder for holding an object on which the thin film is to be formed, a short wavelength laser which emits a first short wavelength laser light passing to the target in the vacuum chamber through the light-transmittable section from outside of the vacuum chamber, and a short wavelength laser light irradiating device for irradiating the object with a second short wavelength laser light passing into the vacuum chamber through the light-transmittable section from outside of the vacuum chamber. The second short wavelength laser light has an intensity lower than that of the first short wavelength laser light irradiating the target.

Abstract: A method is provided for depositing a uniform thin film on a substrate using laser ablation of a target material in a deposition chamber. The laser beam may be pulsed and focused to strike the target along a line to produce a broad plume of ablated material expanding in a propagation direction outward from the target. The plane of the substrate deposition surface is oriented generally parallel to the propagation direction of the plume of ablated material. The deposition chamber includes a low background pressure of inert or reactive gas to facilitate lateral diffusion of ablated atoms, ions, and molecules to be deposited on the substrate surface. Particles ejected from the target material, which have trajectories generally parallel to the propagation direction of the plume, are too heavy to have significant lateral diffusion and have little chance of lodging on the deposition surface.

Abstract: The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.

Abstract: In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.

Abstract: A method for synthesizing a diamond by vapor deposition permits selectively growing high quality diamond on any desired region of a base material at a lower temperature compared to respective conventional temperatures starting with a raw material gas which is prepared by diluting a compound containing carbon atoms such as methane with hydrogen gas. This diluted raw material gas is irradiated with a laser beam satisfying at least one of the following two conditions, namely a spread angle of 1.times.10.sup.-1 mrad to 5.times.10.sup.-1 mrad during oscillation or a half-power band width of 1.times.10.sup.-4 nm to 1.times.10.sup.-1 nm with respect to a band width of an oscillation having a wavelength of 190 nm to 360 nm. Diamond is deposited on the base material from a chemical species generated by such irradiation.

Abstract: A coating technique for beam tubes which employs a laser to ablate a target material and produce a plasma plume containing ions of the target material which adhere to the inner wall surface of the tube forming a thin film. The device employed in the coating process includes a pulse laser, a turning mirror used to direct the laser radiation, a window attached to tubing whose function is to evacuate the setup and to support a rail on which a carriage carrying the target material and optical elements for focusing the laser light onto the targets are mounted. During the coating process, the beam tube and the rail support tubes are evacuated to a lower pressure to remove ambient air. The apparatus is then filled with an inert gas. The laser is pulsed for a predetermined duration to ablate the target material for coating the vicinal surfaces of the beam tube.

Abstract: The invention relates to a method of producing interconnectors for solid oxide electrolyte fuel cells (SOFC). The method of the invention is characterized in that a compact thin film to serve as an interconnector is formed on a substrate by the laser ablation method. By this method, interconnectors made of a compact thin film highly accurate in composition can be produced with high productivity.

Abstract: The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I)RO--Cu--L (I)in whichR represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, andL represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,is described, together with previously unknown compounds of formula (I) which may be used in the process.

Abstract: This invention relates to a composite vapor deposition film composed of a plurality of elements and a method for manufacturing the same. A composite vapor deposition film is produced by having a composite of multi-component particles turned into a vapor to instantaneously evaporate the multi-component particles to an energy active vapor phase state. The composite vapor phase substance is solidified on a deposition substrate to form the vapor deposition film.

Abstract: To provide a process for coating substrate material in which coating material is ablated in an ablation region by a laser beam in a coating chamber containing a negative pressure, propagates in the form of a coating particle stream in the direction of the substrate material and is deposited on it in the form of a coating, with which substrate material can be coated in large quantities by laser ablation, it is proposed that the substrate material be flat material, that the flat material be passed continuously as a continuous strip through the coating chamber and coated under the negative pressure substantially maintained therein, and that the necessary coating material be fed to the coating chamber while the negative pressure is substantially maintained therein.

Abstract: A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.

Abstract: A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Abstract: A process for preparing a film consisting of at least about 90 weight percent of cubic cadmium sulfide is disclosed.In one step of this process, a cadmium sulfide target with a density of at least about 3.8 grams per cubic centimeter is provided. In a separate step, there is provided a heated substrate which is at a temperature of from about 50 to about 300 degrees Centigrade. The heated substrate is disposed at a distance of from about 2 to about 10 centimeters from the target.Both the heated substrate and the target are subjected to a pressure of from about 10.sup.-4 to about 10.sup.-9 Torr. Thereafter, the cadmium sulfide target is contacted with a laser beam with a wavelength of from about 100 nanometers to about 30 microns, an energy of at least about 1.0 watt, and a beam width of less than about 5 millimeters.

Abstract: A method of producing carbon-containing materials, residing in that, prior to electron-beam vacuum evaporation of graphite, on the surface of the graphite there is disposed a transition metal of Groups VI-VIII of the Periodic System or a mixture of at least two transition metals of said Groups, ensuring a higher rate of evaporation of graphite with respect to said metals or mixture, the metal or mixture is melted by an electron beam (10), evaporation of the graphite proceeding through the resulting melt (11) with subsequent condensation of the graphite on a support (4). In the course of gradual consumption of the graphite and said metal or mixture their supply into the resulting melt (11) is effected in such a manner that the consumed surface of the graphite should be completely overlapped by the melt (11).

Abstract: Fabrication of crystalline or molecular nanostructures with dimensions less than or equal to 1000.ANG. on a substrate surface is achieved by the indirect and/or direct action of a highly-localized field-emission current, which causes atoms of molecular gases introduced into a vacuum chamber to deposit or etch at surface atomic sites that are fixed by the emission-tip location. The tip is shaped to maintain control of the emitting region and is typically about 10.ANG. above the structure. The tip position is stepped in a programmed sequence, with each step taken on detecting the current increase induced by an atomic deposition below the tip. Gas sequences or mixtures can also be programmed, and microstructures of typically 10.sup.2 -10.sup.8 atoms are thereby formed with exact control of the positions and types of atomic constituents.The multi-tipped tool consists of a large array of field-emitting nanostructure probe tip extensions on the end of a metal probe.

Abstract: In the manufacture of ultrafine particles of semiconductor compound, pulse laser with high output is irradiated on an evaporation source having the same or similar composition as the above semiconductor compound to evaporate the source in a moment and the ultrafine particles of the semiconductor compound are produced utilizing the nuclear growth in inert gas. A process wherein a material for ultrafine particles is heated/evaporated by laser in inert gas and the resulting vapor is rapidly cooled by a collision with the inert gas whereby the resulting ultrafine particles of said material is sticked on a base plate and another process wherein a material for matrix is heated/evaporated by laser whereby the matrix is formed on the base plate are carried out alternately so that the ultrafine particles are homogeneously dispersed in the matrix to prepare the material wherein the ultrafine particles are dispersed.

Abstract: Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.

Abstract: Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

Abstract: Biocompatible material is deposited onto a substrate by laser deposition, for example by pulsed laser beam deposition and ion-assisted pulsed laser beam deposition. The deposition can be done at room temperature, in a variety of different atmospheres, with control over the stoichiometry, adhesion and porosity of the deposited film. Apparatus for carrying out the deposition, and articles formed by such deposition, are also described. The articles so formed are particularly useful as medical prosthesis, for example, implants.

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material.

Abstract: A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.

Abstract: The steam turbine components having erosion resistant multiple treatments are disclosed. The components include a ferrous substrate having an integral boride layer which typically reduces the underlying fatigue strength of the substrate and includes cracks or defects disposed therein. The boride layer is coated with a sealing layer to substantially cover the cracks or defects for improving the surface erosion resistance and restorings the substrate fatigue strength of the steam turbine component.

Abstract: An improved method for stereolithographically making an object by alternating the order in which similar sets of vectors are exposed over two or more layers. In another method, a pattern of tightly packed hexagonal tiles are drawn. Each tile is isolated from its neighboring tiles by specifying breaks of unexposed material between the tiles. Using an interrupted scan method, vectors are drawn with periodic breaks along their lengths. In another method, modulator and scanning techniques are used to reduce exposure problems associated with the acceleration and deceleration of the scanning system when jumping between vectors or changing scanning directions.

Abstract: An improved stereolithographic apparatus (SLA) and an improved method for generating a part from curable material. The invention utilizes control and/or knowledge of depths of penetration of actinic radiation into a vat of photopolymer to determine and/or control and/or produce desirable characteristics associated with the creation of parts. From a predictive point of view, these desirable characteristics may include determination of cure depth from a given exposure, determination cure width, determination of required minimum surface angle (MSA), determination of optimum skin fill spacing, the strength of cross sections of partially polymerized material, amount of curl type distortion, and necessary overcure to attain adhesion between layers, etc. These determinations can lead to the use of particular building techniques to insure adequate part formation.

Abstract: A method of forming an optical waveguide which includes the steps of forming on a substrate a waveguide layer including at least one host medium and one dopant medium, one of which is more volatile than the other; and heating the waveguide layer to selectively volatize the more volatile medium along a path, raising the index of refraction and creating a waveguide along the path.

Abstract: An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.

Abstract: A process for depositing a layer containing boron and nitrogen on a substrate by decomposing one or more N-substituted borazoles in the presence of the substrate, in particular by a plasma CVD process.

Abstract: Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Abstract: Method for improved photolithography using a laser induced metallization cess to produce a metal mask wherein a work piece surface is treated to have a predetermined pattern of at least two materials each having different electron band gaps, the treated work piece is positioned in a metallizing solution, and the workpiece is exposed to a laser beam having a wavelength corresponding to the electron gap of a selected one of the materials. The method can advantageously be used to produce ohmic contacts for microcircuit devices.

Abstract: An improved stereolithography method for building a three-dimensional article including the steps of patternwise curing successive layers of a bath of curable liquid resin formulation until the article has been completely built up, removing the article from the liquid resin bath and then post-curing the article, wherein the liquid resin is a "thiol/nene" formulation including:(a) a first compound having a plurality of norbornene groups thereon;(b) a second compound having a plurality of thiol groups therein; and(c) a free radical photoinitiator,the total functionality of the formulation being greater than 4.

Abstract: A method for depositing a layer of additional material onto an electrically conductive thin layer structure preferably by means of the thermally induced reason of a compound in the vapor state, in which the thin structure is heated by an electric current passed through it. The method is especially suitable for reinforcing metallic conductor structures which have been made on a substrate by a direct-writing-laser chemical vapor deposition method, for example, fine tungsten wires.